Chapter 3: Bipolar Junction Transistor (BJT)

FUNDAMENTALS OF ELECTRONICS ENGINEERING (BENE 1123)

PART 1

Universiti Teknikal Malaysia, Melaka (UTeM)

Chapter 3 Objectives
Understand the basic structure of a transistor and its operation Discuss the three configurations of the BJT which are Common-Base, Common-Emitter and Common-Collector. Explain how a transistor is biased with different types of biasing technique. Discuss transistor parameters and characteristics and use these to analyze a transistor circuit

History of Transistor
In 1947, at Bell Laboratories, transistor was invented by a team of three men to replace the vacuum tube: Dr. William Shockley Dr. John Bardeen
Dr. Walter

H. Brattain

From left: Dr. Bardeen, Dr. Shockley, Dr. Brattain

History of Transistor
The first transistor was made of the transition metal Germanium. It soon proved its worth with its ability to amplify electrical signals and to switch them on and off.

This is one of the first transistors, a replica of which has been donated to the Computer History Museum in Mountain View, California

History of Transistor

Moore's law states: The number of transistors that can be fabricated on a very large-scale integrated (VLSI) chip doubles every two years.

History of Transistor

In 2007, Intel has began producing 45 nanometer transistor chips, which is currently the smallest transistor in the market. It has been applied in Intel Dual Core and Intel Xeon processor.

A photo of 45nm transistor (side view)

Die-image of Intels first 45 nm processor, codenamed "Penryn (top view)

Fundamental of Transistor

There are many different types of transistors (BJT, FET and etc), but their basic theory of operation is all the same. A transistor is the same theory used earlier with the PN-junction diode except that now two such junctions are required to form the three elements of a transistor.

Fundamental of Transistor

The term transistor was derived from the words TRANSfer and resISTOR. This term was adopted because it best describes the operation of the transistor - the transfer of an input signal current from a low-resistance circuit to a high- resistance circuit.

Fundamental of Transistor

Basically, the transistor is a solid-state device that amplifies any input signal by controlling the flow of current carriers through its semiconductor materials

E B

Fundamental of Transistor

By using the Ohm's law formula for power (P = IR) and assuming current is constant, you can conclude that the power developed across a high resistance is greater than that developed across a low resistance.
Let say, Forward bias (low resistance) E

I = 1 Amp

Let say, R = 0.5 P = I R = 0.5 W

C
Reverse bias (high resistance)

Let say, R = 10 P = I R = 10 W

Fundamental of Transistor

Therefore, a low-power signal could be injected into the forward-biased junction and produce a high-power signal at the output of reverse-biased junction. In this manner, a power gain would be obtained across the transistor.

Bipolar Junction Transistor (BJT)

The three elements of the two-junction transistor are (1) the EMITTER, which emits current carriers (electrons or holes); (2) the BASE, which controls the flow of current carriers; and (3) the COLLECTOR, which collects the current carriers. Note: the labeling of the transistor: E Emitter- heavily doped B Base - lightly doped C Collector - moderately doped

Physical structure of BJT in chips (side view)

Transistor Construction

BJT is constructed with three doped semiconductor regions separated by two pn junctions. There are two types of transistors: pnp and npn-type. This transistor is classified as either NPN or PNP according to the arrangement of their N and P materials. Their basic construction and chemical treatment is implied by their names, "NPN" or "PNP."

Basic Transistor Operation

For BJT, one p-n junction of a transistor is reverse biased, while the other is forward biased.

The pnp diode has been redrawn without base-collector bias. The base-emitter is in in forward bias which is similar to the forward biased diode. The depletion region has been reduced, resulting in a heavy flow of + majority carriers from the p- to the n- material

If we remove the base-to emitter bias of the pnp transistor, the situation is similar to the reverse biased diode. The flow of the majority carriers is zero, resulting in only a + minority-carrier flow.

Both biasing potentials then are applied to a pnp transistor. A large number of + majority carriers will diffuse across the forward-biased p-n junction into the n-type material Since the n-type region is very thin and has a low conductivity, a small number of carriers will diffuse into the base terminal. The larger number of + majority carriers will diffuse across the reverse biases junction into the p-type material connected to the collector terminal.

Summary

Transistor = Transfer and Resistor Transistor is used as amplifier and switch BJT has three elements; Emitter, Base and Collector BJT construction; PNP and NPN. BJT operation; E-B in forward bias and C-B in reverse bias.