ZENER DIODES
FEATURES
Silicon Planar Power Zener Diodes
Cathode
Mark
min. 1.083 (27.5)
DO-35
MECHANICAL DATA
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Ptot
500(1)
mW
Junction Temperature
Tj
175
TS
55 to +175
Thermal Resistance
Junction to Ambient Air
Forward Voltage
at IF = 100 mA
SYMBOL
MIN.
TYP.
MAX.
UNIT
RthJA
300(1)
C/W
VF
1.0
Volts
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
12/10/98
Dynamic resistance
Zener Voltage
range(1)
at
at
at
IZ = 1mA
IZ = 5 mA
IZ = 5 mA
f = 1 kHz
f = 1 kHz
VZ V
Type
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
BZX55
(3)
C0V8
C2V7
C3V0
C3V3
C3V6
C3V9
C4V3
C4V7
BZX55 C5V1
BZX55 C5V6
BZX55 C6V2
BZX55 C6V8
BZX55 C7V5
BZX55 C8V2
BZX55 C9V1
BZX55 C10
BZX55 C11
BZX55 C12
BZX55 C13
BZX55 C15
BZX55 C16
BZX55 C18
BZX55 C20
BZX55 C22
BZX55 C24
BZX55 C27
BZX55 C30
BZX55 C33
BZX55 C36
BZX55 C39
BZX55 C43
BZX55 C47
BZX55 C51
BZX55-C56
BZX55-C62
BZX55-C68
BZX55-C75
rzj
Temp. coefficient
of Zener Voltage
at
IZ = 5 mA
VZ %/K
rzj
min
max
IR nA
IR A
Admissible
Zener
current(2)
at
VR V
IZM mA
0.73 0.83
2.5 2.9
2.8 3.2
3.1 3.5
3.4 3.9
3.7 4.1
4.0 4.6
4.4 5.0
<
<
<
<
<
<
<
<
8
85
85
85
85
85
75
60
<
<
<
<
<
<
<
<
600
600
600
600
600
600
600
600
0.25
0.08
0.08
0.08
0.08
0.07
0.04
0.03
0.06
0.06
0.05
0.04
0.03
0.01
+0.01
<
<
<
<
<
<
<
10000
4000
2000
2000
2000
1000
500
<
<
<
<
<
<
<
50
40
40
40
40
20
10
1
1
1
1
1
1
1
135
125
115
105
95
90
85
4.8 5.4
5.2 6.0
5.8 6.6
6.4 7.2
7.0 7.9
7.7 8.7
8.5 9.6
9.4 10.6
10.4 11.6
11.4 12.7
12.4 14.1
13.8 15.6
15.3 17.1
16.8 19.1
18.8 21.2
20.8 23.3
22.8 25.6
25.1 28.9
28 32
31 35
34 38
37 41(4)
40 46(4)
44 50(4)
48 54(4)
52.0 60.0(4)
58.0 66.0(4)
64.0 72.0(4)
70.0 79.0(4)
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90(4)
90(4)
110(4)
125(4)
135(4)
150(4)
200(4)
250(4)
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500(5)
600(5)
700(5)
700(5)
1000(5)
1000(5)
1000(5)
1000(5)
0.02
0.01
0
+0.01
+0.01
+0.01
+0.02
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
typ.
typ.
typ.
typ.
+0.05
+0.06
+0.07
+0.08
+0.09
+0.09
+0.10
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
<
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
5
5
5
10
10
10
10
10
1
1
2
3
5
6
7
7.5
8.5
9
10
11
12
14
15
17
18
20
22
24
27
28
32
35
38
42
47
51
56
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
7.0
6.4
5.9
5.3
+0.1(4)
+0.1(4)
+0.1(4)
+0.1(4)
NOTES:
(1) Tested with pulses tp = 5 ms
(2) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
(3) The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be F instead of Z.
Connect the cathode lead to the negative pole
(4) at IZ = 2.5 mA
(5) at IZ = 0.5 mA