Philips Semiconductors Product specification

Thyristor BT169W Series

logic level

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT
thyristor in a plastic envelope, suitable
for surface mounting, intended for use BT169 BW DW EW GW
in general purpose switching and VDRM, Repetitive peak 200 400 500 600 V
phase control applications. This VRRM off-state voltages
device is intended to be interfaced IT(AV) Average on-state 0.5 0.5 0.5 0.5 A
directly to microcontrollers, logic current
integrated circuits and other low IT(RMS) RMS on-state current 0.8 0.8 0.8 0.8 A
power gate trigger circuits. ITSM Non-repetitive peak 8 8 8 8 A
on-state current

PINNING - SOT223 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
4
1 cathode a k
2 anode
3 gate

tab anode 1 2 3 g

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
B D E G
VDRM, VRRM Repetitive peak off-state - 2001 4001 5001 6001 V
voltages
IT(AV) Average on-state current half sine wave; - 0.63 A
Tsp ≤ 112 ˚C
IT(RMS) RMS on-state current all conduction angles - 1 A
ITSM Non-repetitive peak half sine wave;
on-state current Tj = 25 ˚C prior to surge
t = 10 ms - 8 A
t = 8.3 ms - 9 A
I2t I2t for fusing t = 10 ms - 0.32 A2s
dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; - 50 A/µs
on-state current after dIG/dt = 100 mA/µs
triggering
IGM Peak gate current - 1 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 2 W
PG(AV) Average gate power over any 20 ms period - 0.1 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997 1 Rev 1.200

Philips Semiconductors Product specification

Thyristor BT169W Series

logic level

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-sp Thermal resistance - - 15 K/W
junction to solder point
Rth j-a Thermal resistance pcb mounted, minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 10 mA; gate open circuit - 50 200 µA
IL Latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ - 2 6 mA
IH Holding current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ - 2 5 mA
VT On-state voltage IT = 2 A - 1.35 1.5 V
VGT Gate trigger voltage VD = 12 V; IT = 10 mA; gate open circuit - 0.5 0.8 V
VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C; 0.2 0.3 - V
gate open circuit
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C; - 0.05 0.1 mA
RGK = 1 kΩ

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM =67% VDRM(max); Tj = 125 ˚C; - 25 - V/µs
off-state voltage exponential waveform; RGK = 1k Ω
tgt Gate controlled turn-on ITM = 2 A; VD = VDRM(max); IG = 10 mA; - 2 - µs
time dIG/dt = 0.1 A/µs
tq Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 100 - µs
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ

September 1997 2 Rev 1.200

Philips Semiconductors Product specification

Thyristor BT169W Series

logic level

Ptot / W BT169W Tsp(max) / C ITSM / A BT169

1 110 10
conduction form
angle factor a = 1.57 IT I TSM
degrees a
0.8
30 4 1.9
113 8 time
60 2.8 2.2 T
90 2.2
120 1.9 2.8 Tj initial = 25 C max
180 1.57
0.6 4 116 6

0.4 119 4

0.2 122 2

0 125 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1 10 100 1000
IF(AV) / A Number of half cycles at 50Hz

Fig.1. Maximum on-state dissipation, Ptot, versus Fig.4. Maximum permissible non-repetitive peak
average on-state current, IT(AV), where a = form on-state current ITSM, versus number of cycles, for
factor = IT(RMS)/ IT(AV). sinusoidal currents, f = 50 Hz.

ITSM / A BT169 IT(RMS) / A BT134W

1000 2

1.5
100

10 IT I TSM

0.5
T time
Tj initial = 25 C max

1
10us 100us 1ms 10ms 0
0.01 0.1 1 10
T/s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 10ms. currents, f = 50 Hz; Tsp ≤ 112˚C.

IT(RMS) / A BT134W VGT(Tj)

1.2 VGT(25 C) BT151
1.6
112 C
1
1.4

0.8
1.2

0.6
1

0.4 0.8

0.2 0.6

0 0.4
-50 0 50 100 150 -50 0 50 100 150
Tsp / C Tj / C
Fig.3. Maximum permissible rms current IT(RMS) , Fig.6. Normalised gate trigger voltage
versus solder point temperature Tsp. VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

September 1997 3 Rev 1.200

Philips Semiconductors Product specification

Thyristor BT169W Series

logic level

IGT(Tj) IT / A BT169W
IGT(25 C) BT169 5
3 Tj = 125 C
Tj = 25 C

2.5 4
Vo = 1.0 V
Rs = 0.27 Ohms

2 3

1.5
typ max
2
1
1
0.5

0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5
Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-sp (K/W) BT169W

IL(25 C) BT169 100
3

2.5 10

1
1.5

P tp
D
1
0.1

0.5 t

0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-sp, versus
versus junction temperature Tj, RGK = 1 kΩ. pulse width tp.

IH(Tj) dVD/dt (V/us)

1000
IH(25 C) BT169
3

2.5
100
2 RGK = 1 kohms

1.5

10
1

0.5

0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,
versus junction temperature Tj, RGK = 1 kΩ. dVD/dt versus junction temperature Tj.

September 1997 4 Rev 1.200

Philips Semiconductors Product specification

Thyristor BT169W Series

logic level

MOUNTING INSTRUCTIONS
Dimensions in mm.

3.8
min

1.5
min

2.3 6.3
1.5
min

(3x)

1.5
min

4.6

Fig.13. soldering pattern for surface mounting SOT223.

PRINTED CIRCUIT BOARD

Dimensions in mm.

36

18

60
4.6 4.5
9

10

15
50

Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).

September 1997 5 Rev 1.200

Philips Semiconductors Product specification

Thyristor BT169W Series

logic level

MECHANICAL DATA

Dimensions in mm 6.7
6.3
Net Mass: 0.11 g 3.1
B
0.32
0.2 M A
0.24 2.9

4 A

0.10
0.02 3.7 7.3
3.3 6.7

16 13
max

1 2 3
10
max
1.8 1.05 2.3 0.80
max 0.1 M B
0.85 0.60
(4x)
4.6

Fig.15. SOT223 surface mounting package.

Notes
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.
2. Epoxy meets UL94 V0 at 1/8".

September 1997 6 Rev 1.200

Philips Semiconductors Product specification

Thyristor BT169W Series

logic level

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997 7 Rev 1.200

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