BYW 100-50 200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100C UNDER USERS CONDITIONS

DESCRIPTION Low voltage drop and rectifier suited for switching mode base drive and transistor circuits. ABSOLUTE RATINGS (limiting values)
Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive Peak Forward Current Average Forward Current* Surge non Repetitive Forward Current Power Dissipation* Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case tp 20s Ta = 90C = 0.5 tp = 10ms Sinusoidal Ta = 90C

F 126 (Plastic)

Value 50 1.5 50 1.3 - 40 to + 150 - 40 to + 150 230

Unit A A A W C C

Symbol VRRM VRSM

Parameter 50 Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage 50 55

BYW 100100 100 110 150 150 165 200 200 220

Unit V V

THERMAL RESISTANCE
Symbol Rth (j - a) Junction-ambient* Parameter Value 45 Unit C/W

* On infinite heatsink with 10mm lead length.

December 1994

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ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Synbol IR Tj = 25C Tj = 100C VF Tj = 25C Tj = 100C IF = 4.5A IF = 1.5A Test Conditions VR = VRRM Min. Typ. Max. 10 0.5 1.2 0.85 Unit A mA V

RECOVERY CHARACTERISTICS
Symbol trr Qrr tfr VFP Tj = 25C VR = 30V Tj = 25C VR 30V Tj = 25C Measured at 1.1 x VF Tj = 25C Test Conditions IF = 1A See figure 10 IF = 1A IF = 1A IF = 1A diF/dt = - 50A/s diF/dt = - 20A/s tr = 10ns tr = 10ns 10 30 5 Min. Typ. Max. 35 Unit ns

nC ns V

To evaluate the conduction losses use the following equations: VF = 0.66 + 0.075 IF P = 0.06 x IF(AV) + 0.075 IF2(RMS)

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Fi g ure 1 . Ma xi m u m av er ag e powe r dissipation versus average forward current. Figure 2. Average forward current versus ambient temperature.

Figure 3. Thermal resistance versus lead length.

Mounting n1 INFINITE HEATSINK

Mounting n2 PRINTED CIRCUIT

Figure 5. Peak forward current versus peak forward voltage drop (maximum values).

Figure 4. Transient thermal impedance junction-ambient for mounting n2 versus pulse duration (L = 10 mm).

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Figure 6. Capacitance versus reverse voltage applied. Figure 7. Recovery time versus diF/dt.

Figure 8. Peak reverse current versus diF/dt.

Figure 9. Dyn amic pa rameters versus junction temperature.

Figure 10. Measurement of trr (Fig. 7) and IRM (Fig. 8).

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PACKAGE MECHANICAL DATA F 126 (Plastic)

B note 1 E

B E note 1

O /C

/D O
note 2

O /D

DIMENSIONS REF. A B C D E Millimeters Min. 6.05 26 2.95 0.76 3.05 0.86 1.27 Max. 6.35 Inches Min. 0.238 1.024 0.116 0.029 0.120 Max. 0.250 NOTES

1 - The lead diameter D is not controlled over zone E

2 - The minimum axial lengh within which the device may be 0.034 placed with its leads bent at right angles is 0.59(15 mm)
0.050

Cooling method: by convection (method A) Marking: type number Weight: 0.4g

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.

1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5