3, MARCH 2013
IR-Drop in On-Chip Power Distribution Networks
of ICs With Nonuniform Power Consumption
Josep Rius, Member, IEEE
AbstractA compact IR-drop model for on-chip power
distribution networks in array and wire-bonded ICs is analyzed.
Chip dimensions, size, and location of the supply pads, metal
coverage, piecewise distribution of IC consumption, and the
resistance between the pads and the power supply are considered
to obtain closed-form expressions for the IR-drop. The IR-drop
model is validated by comparing its results with electrical
simulations. The obtained error is in the range of 1%.
Index TermsIC modeling, IR-drop, power distribution
networks (PDNs), power supply noise (PSN).
I. INTRODUCTION
T
O ENSURE a good supply voltage throughout the IC, and
for the high-consumption and high-density ICs available
in current technologies, the on-chip power distribution network
(PDN) is usually organized as a grid of wide parallel wires
in the two or more upper metal layers covering the IC
surface. Connection to the package is currently made by two
approaches: the so-called peripheral bonding, in which the
supply pads are distributed along the sides of the IC, and
array bonding, where the supply pads are distributed in an
array over the whole IC surface, in a ip-chip package.
The PDN behaves as a conductive mesh with resistive,
inductive, and capacitive properties. As a consequence, the
electric current spikes produced during the circuit activity are
transformed into voltage bounces at the supply terminals of the
internal circuits. This power supply noise (PSN) has several
undesirable effects on the performance and reliability of ICs
[1]. A good PDN design is therefore necessary to reduce the
PSN below a specied value. The PSN can be roughly divided
into static and dynamic. Static PSN, or IR-drop, is the voltage
drop caused by the DC supply current in the PDN resistances,
whereas dynamic PSN is due to transients exciting the PDN
inductances and capacitances. The analysis of the IR-drop is
important [2], [3], [1] because it allows addressing the most
important issues in PDN design, that is, width and pitch of
the PDN wires [4][8], [9] and size, number, and location of
pads [10], [11], [4], [5], [12][13]. When a dynamic analysis
of the PSN is required, there are additional important issues
to solve, such as the impact of on-chip PDN inductance [14],
[15] and the amount and distribution of on-chip decoupling
capacitance [15], [1].
Manuscript received June 6, 2011; revised November 9, 2011; accepted
February 16, 2012. Date of publication March 20, 2012; date of current version
February 20, 2013.
The author is with the Department of Electronic Engineering,
Universitat Politecnica de Catalunya, Barcelona 08028, Spain (e-mail:
josep.rius@upc.edu).
Digital Object Identier 10.1109/TVLSI.2012.2188918
The design of a good, reliable on-chip PDN of a digital IC
is a very complex task because designers cannot anticipate all
the details of the design. The PSN depends on the location,
size, and activity of the circuit blocks. Therefore, in order to
check that the PSN is below the specied value, it is necessary
to simulate the complete circuit, which is clearly unfeasible
for large ICs. The help of specic CAD tools alleviates this
problem. However, due to the simulation time, CAD tools are
primarily intended for use in postlayout verication, after the
design is complete. A failure in the design involves a costly
rework of the PDN. This leads to overdimensioning, resulting
in the sacrice of valuable routing resources. For this reason,
the use of prelayout tools in the early stages of the PDN
design, which give approximate results for the PSN expected,
becomes a necessity [16], [9], [17].
This paper is exclusively centered on IR-drop. It addresses
the estimation of the PDN performance in the early steps of an
IC design by an analytical approach. As mentioned, this prob-
lem can also be tackled with numerical tools. However, the
analytical approach has the advantage that, in addition to pro-
viding a numerical solution, it shows the relationships between
the signicant parameters, improving the understanding of the
problem. Thus, there is room for an analytical tool that, in an
interactive fashion, rapidly provides approximate results for
the expected IR-drop of a PDN. This tool shows the depen-
dency of IR-drop on the number and size of pads and consum-
ing blocks, IC dimensions, current density and sheet resistance,
thus allowing rapid optimization of these parameters.
In their seminal paper [16], Shakeri and Meindl demonstrate
that the PDN can be approximated as a continuous layer of
conductive material and that IR-drop can be calculated by
solving a partial differential equation, that is, Poisson equation,
with the proper boundary conditions and source function. This
paper takes as the starting point the framework and denition
of the problem as presented in [16] without repeating the
derivation of the Poisson equation and related concepts, which
are extensively discussed in [16]. The organization of this
paper is as follows. Section II presents the problem to solve.
In Section III, expressions to obtain the IR-drop at any point
of an innite array-bonded PDN are derived for any number
and location of pads and any number of rectangular consuming
blocks. The results are used in Section IV to nd the solution
of the same problem in nite PDNs. In Section V, we compare
our formulas with electrical simulations of several PDNs.
Section VI discusses some features of the proposed approach
and nally, Section VII summarizes the conclusions of this
paper.
10638210/$31.00 2012 IEEE
RIUS: IR-DROP IN ON-CHIP POWER DISTRIBUTION NETWORKS OF ICs 513
Fig. 1. IC with six consuming blocks and an array of power/ground pads.
II. STATEMENT OF THE PROBLEM
According to the approach of [16], the IR-drop in a PDN
follows the Poisson equation:
2
V = R
S
J (1)
where V is the IR-drop (V), R
S
is the sheet resistance of the
PDN (), and J is the current density function (A/m
2
). The
sheet resistance R
S
is assumed to be constant in the whole
IC. In the array-bonding conguration, the supply current
drawn by the consuming blocks is supplied by an array of
power/ground pads distributed over the IC surface. Fig. 1
illustrates an IC with six blocks and an array of power/ground
pads (small black and white squares).
In the array-bonding conguration, the normal derivative of
the voltage, V/n (where symbol n in a rectangular IC means
either x or y), at the four sides of the PDN is zero; that is, the
current drawn by the blocks ows from the power to ground
pads through the PDN.
The solution of (1) for the simple case of constant J in an
innite IC with an innite PDN and an innite regular array
of pads is shown in [16]. A solution for the IR-drop at any
point is given in the form of several double and triple innite
series in [16]. After some approximations and numerical work,
the authors show that the maximum IR-drop (which is at the
center of a square with four supply pads at its vertices) is
given by
V
IRmax
=
R
S
I
PAD
2
ln
_
0.387a
D
PAD
_
(2)
where a is the distance between adjacent pads, is a correc-
tion factor related to the pad shape, and D
PAD
is the side
length of a square pad. The coefcient 0.387 is obtained
after a numerical calculation of the double and triple innite
series and assuming several approximations. Equation (2)
puts together the relevant variables in PDN design: the sheet
resistance of the power grid, R
S
, which is related to the metal
coverage of such grid; the current per pad, I
PAD
; the pad
density, a, which is related to the distance between the pads;
and the pad size, D
PAD
.
a
b
PAD
observation
point P
r
pp
r
pxy
dxdy
A
a
p
R
pad
V
0
a
b
PAD
observation
point P
r
pp
r
pxy
dxdy
A
a
p
R
pad
V
0
Fig. 2. Parameters involved in the analysis of the IR-drop at the observation
point P in an innite resistive plane with one pad and one consuming block.
In Sections III and IV, we obtain approximate expressions
for the IR-drop under more realistic conditions, that is, the
current density J is not constant in the whole IC and/or
the PDN is of nite dimensions. Instead of solving (1)
directly, we use several results from potential theory and
conformal mapping techniques to nd the IR-drop in these
cases.
At this point, it is appropriate to say that if the sheet
resistance R
S
of the PDN is nonisotropic, that is, if the sheet
resistance in the x-direction, R
SX
, and in the y-direction, R
SY
,
is different, a change in the independent variables x and y
makes the sheet resistance isotropic at the small price of a
change in the PDN dimensions [16]. Hence, our analysis only
considers the isotropic case, with R
S
constant.
Moreover, our analysis is intended for circular pads but, as
shown in [16] and [18], it can be extended to square pads by
using the concept of a circular pad of equivalent radius having
the same resistance to the PDN as the square pad.
III. IR-DROP IN AN INFINITE PDN
Let us now attack the following simpler problem: we
consider an innite PDN as a continuous conductive surface
with constant sheet resistance R
S
. A single block A of
dimensions a b m
2
and a constant current density J A/m
2
is connected to the PDN at an arbitrary place. At another
arbitrary point, there is a circular pad of radius a
P
that
supplies the current I
PAD
= abJ required by A. A resistance
R
pad
connects the pad to the power supply, which is assumed
to be at a constant voltage V
0
= 0. Fig. 2 illustrates the
geometry of the problem. The IR-drop between the pad
(whose voltage is V
pad
= JabR
pad
) and the potential V
P
at
any observation point P over the PDN is found as follows.
We denote the distance between the center of the pad and
the observation point P as r
Pp
, and the distance between
the differential area dxdy inside A and point P as r
Pxy
. The
potential at P is [19]
V
P
=
J R
S
2
a
_
0
b
_
0
ln
_
r
Pxy
_
dxdy
JabR
S
2
ln
_
r
Pp
_
. (3)
514 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL. 21, NO. 3, MARCH 2013
a
b
PAD
1
observation
point P
r
P1
r
pxy
dxdy
A
PAD
2
PAD
3
r
P2
r
P3
PAD
N
r
PN
a
p2
a
pN
a
p1
a
p3
R
pad
V
0 R
pad
V
0
R
pad
V
0
R
pad
V
0
a
b
PAD
1
observation
point P
r
P1
r
pxy
dxdy
A
PAD
2
PAD
3
r
P2
r
P3
PAD
N
r
PN
a
p2
a
pN
a
p1
a
p3
R
pad
V
0
R
pad
V
0 R
pad
V
0
R
pad
V
0
R
pad
V
0
R
pad
V
0
R
pad
V
0
R
pad
V
0
Fig. 3. Parameters involved in the analysis of the IR-drop at the observation
point P in an innite resistive plane with multiple pads and one consuming
block.
Integrals like the one in (3) are well known in engineering
electromagnetics. Their explicit solution can be found else-
where [20]. They dene the so-called geometric mean distance
(GMD) between a point P and the rectangular block A, as
shown in the following equation:
a
_
0
b
_
0
ln
_
r
pxy
_
dxdy = ab ln (GMD
P
) . (4)
Now, (3) can be written as
V
P
=
J R
S
ab
2
ln
GMD
P
r
Pp
. (5)
If point P is at a distance a
P
from the center of the pad,
that is, at any point of its circumference, then the following
equalities hold:
r
Pp
= a
P
, V
P
= V
pad
, GMD
P
= GMD
pad
(6)
where GMD
pad
is the GMD from the center of the pad to
A, which is assumed to be the same as the distance from the
circumference of the pad to A provided that the pad radius a
P
is small with respect to the block dimensions.
Now the complete IR-drop, V
P
, between the power supply
and point P becomes
V
P
=
J R
S
ab
2
ln
_
GMD
pad
GMD
P
r
Pp
a
P
_
+ JabR
pad
. (7)
Let us now generalize this result for N pads.
A. Multiple Pads
Imagine the same block A and N circular pads, PAD
1
,
PAD
2
, , PAD
N
, of radius a
P1
, a
P2
, , a
PN
, and equal
resistances R
pad
, distributed on an innite PDN. It is assumed
that the pads are widely separated, that is, the distances
between them are much greater than their radius, r
i j
>> (a
Pi
,
a
Pj
). Fig. 3 shows the involved geometry.
Each pad supplies a fraction
i=1
i
= 1. (8)
Now we can write
V
P
=
JabR
S
2
ln (GMD
P
)
1
JabR
S
2
ln (r
P1
)
2
JabR
S
2
ln (r
P2
)
N
JabR
S
2
ln (r
PN
) .
(9)
That is
V
P
=
JabR
S
2
ln
GMD
P
N
i=1
r
i
Pi
(10)
where GMD
P
is the GMD between point P and block A, and
r
Pi
is the distance between point P and pad i , which supplies
the fraction
i
of the total current.
By applying the above principle, we can nd the IR-drop
between point P and the pad voltage. To do so, we place
point P at a distance a
Pi
from the center of pad i , that is, at
its circumference. Thus, the following equalities hold:
V
P
= V
pad i
=
i
JabR
pad
GMD
P
= GMD
i
r
P1
= r
i1
, r
P2
= r
i2
, . . . ,
r
Pi
= a
Pi
, . . . , r
PN
= r
i N
. (11)
By grouping together all the terms in i , we obtain the
following set of N equations, one for each value of i , with N
unknowns (the values of )
ln GMD
i
N
j =i
j
ln r
i j
i
_
ln a
Pi
2
R
pad
R
S
_
= 0,
i = 1, 2, . . . , N. (12)
Such N equations are not linearly independent because
of (8). However, we can subtract each equation in (12) from
its predecessor and build N 1 equations. These, together
with (8) form a system of N linearly independent equations
with N unknowns, as shown in (13)
ln
GMD
i
GMD
i+1
=
i
_
ln
a
Pi
r
i+1,i
2
R
pad
R
S
_
+
i+1
_
ln
r
i,i+1
a
P,i+1
+2
R
pad
R
S
_
+
N
j = i
j = i +1
j
ln
r
i j
r
i+1, j
N
i=1
i
= 1. (13)
RIUS: IR-DROP IN ON-CHIP POWER DISTRIBUTION NETWORKS OF ICs 515
This system can be written in matrix form as
ln
a
P1
r
21
2
R
pad
R
S
ln
r
12
a
P2
+2
R
pad
R
S
ln
r
1,N1
r
2,N1
ln
r
1,N
r
2,N
ln
r
21
r
31
ln
a
P2
r
32
2
R
pad
R
S
ln
r
2,N1
r
3,N1
ln
r
2,N
r
3,N
ln
r
N1,1
r
N1
ln
r
N1,2
r
N2
ln
a
P,N1
r
N,N1
2
R
pad
R
S
ln
r
N1,N
a
PN
+2
R
pad
R
S
1 1 1 1
2
.
.
.
ln
GMD
2
GMD
1
ln
GMD
3
GMD
2
ln
GMD
N
GMD
N1
1
1
=
1
2
+
1
2
ln
GMD
2
GMD
1
ln
r
12
a
P
+2
R
pad
R
S
2
=
1
2
1
2
ln
GMD
2
GMD
1
ln
r
12
a
P
+2
R
pad
R
S
. (16)
B. Completing the Solution
The total IR-drop, V
P
, between the power supply and
point P can be calculated as the sum of the voltage drop
at the R
pad
of a reference pad plus the IR-drop from this pad
to point P. As any pad can be selected as the reference, we
choose pad 1. Thus, the formula for V
P
becomes
V
P
=
JabR
S
2
ln
GMD
1
GMD
P
N
j =1
r
j
Pj
a
1
P1
N
j =1
r
j
1 j
+
1
JabR
pad
(17)
which reduces to (7) if N = 1.
As can be seen, the problem of nding the IR-drop at any
point of an innite PDN having one consuming block and N
pads is solved if the fraction of the current supplied by each
pad (coefcients ) is known.
Because of the linearity of the problem, it is easy to
generalize (17) for M blocks by applying superposition. Thus,
the previous procedure is repeated M times, one for each
block, to calculate vectors
1
,
2
, ,
M
. Then, the total
IR-drop at any point is found by summing the contribution of
each block: V
P(total)
=
M
j =1
V
Pj
.
C. Flexibility and Generality of (17)
Under the above assumptions, (17) gives the IR-drop at any
point of a PDN with a sheet resistance R
S
, a number N of
circular pads of radius a
P
and resistance to power supply R
pad
,
and one block of dimensions a b with a current density J.
XX
a
a
2a
a
P
Fig. 4. Calculation of the IR-drop at the center of a square with four pads
and one square consuming block and an innite resistive plane.
Note that under the assumption of innite dimension for the
PDN, (17) is fully exible, which allows deciding on the
size and location of the consuming block, and the number,
radius, and location of pads. As will be shown in Section V,
the IR-drop V
P
as calculated from (17) provides a very
good approximation of the real IR-drop of nite PDNs if the
consuming block is not very close to the external borders of
the pad array, that is, the IC sides.
Equation (17) can also be used to calculate the maximum
IR-drop under the same conditions as those analyzed by Shak-
eri and Meindl in [16]. In this paper, the maximum IR-drop
(which is placed at the center of the square formed by four
pads) is given by (2), where the numerical coefcient is known
after a long calculation of several double and triple Fourier
series and assuming several approximations. The interested
reader may read [16] for details. As will be shown here, (2)
can be derived from (17), when the latter is applied to this
particular case.
Let us consider the square consuming block in Fig. 4, which
is embedded in an innite PDN with a sheet resistance R
S
.
In this example, R
pad
= 0. The side length of the block is
2a, which is twice the distance between adjacent pads. It
has four circular pads with the same radius a
P
symmetrically
distributed in the block. Note that this geometry reproduces
the scenario studied by Shakeri and Meindl, except that in
this case the consuming block is nite. Let us now use (17)
to calculate V
P
at its center, that is, the point marked with
X in Fig. 4.
In these conditions, (17) becomes
V
X
=
4Ja
2
R
S
2
ln
GMD
1
r
1
X1
r
2
X2
r
3
X3
r
4
X4
GMD
X
a
1
P
r
2
12
r
3
13
r
4
14
=
Ja
2
R
S
2
ln
_
GMD
1
r
1
X1
r
2
X2
r
3
X3
r
4
X4
GMD
X
a
1
P
r
2
12
r
3
13
r
4
14
_
4
. (18)
Due to the particular symmetry of the gure, (18) becomes
V
X
=
Ja
2
R
S
2
ln
GMD
1
2
1
2
a
1
4
GMD
X
2 2
1
8
a
1
4
P
4
=
I
PAD
R
S
2
ln
0.3797a
a
P
(19)
516 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL. 21, NO. 3, MARCH 2013
4 pads
16 pads
36 pads
64 pads
X
4 pads
16 pads
36 pads
64 pads
X
Fig. 5. Shakeri and Meindls problem [16]: calculation of the IR-drop at the
center of a square. The number of pads and the area of the square consuming
block tend to innity.
where GMD
1
and GMD
X
are calculated as functions of a from
the solution of (4), according to [21]. This result is very close
to Shakeri and Meindls formula (2). Now, to reproduce the
case in [16], we increase the size of the block and the number
of pads, as shown in Fig. 5.
In this way, we obtain an asymptotic equation for V
X
by
generalizing (18)
V
X
=
I
PAD
R
S
2
ln
_
coef a
a
P
_
. (20)
We check the coefcient of (20) for different numbers N
of symmetrically distributed pads. The results are shown in
Table I.
As can be seen, when N increases, the numerical coefcient
coef tends to a denite value which is very close to that
reported by Shakeri and Meindl in [16].
It is worth pointing out that the method to obtain the
numerical coefcient of (2) presented in our paper is much
simpler than that in [16] and gives practically the same results
under the same conditions. In addition, it is much more exible
and can be applied to a variety of cases because it does not
impose any restriction on the number, size, or symmetry of
the distribution of the consuming blocks and pads.
IV. IR-DROP IN A FINITE PDN
In Section III, we made a strong assumption of a PDN of
innite extension. Here, we remove this assumption because
it gives erroneous results in the estimation of the IR-drop
when the consuming blocks are close to the IC sides. In
fact, on-chip PDNs are on top of dies of nite dimensions,
L units wide and H units high. Let us now extend the results
of Section III to obtain the IR-drop for such PDNs. This
extension is based on the conformal transformation of the
interior of a rectangle in a complex plane Z into the upper
TABLE I
COEFFICIENT coef OF (20) AS A FUNCTION OF NUMBER OF PAD IN FIG. 5
N Calculated coef
4 0.3797
16 0.3810
36 0.3813
64 0.3814
100 0.3814
half of another complex plane W. Conformal transformation
is a mathematical technique that uses the functions of com-
plex variables to map complicated boundaries into simpler,
more readily analyzed congurations [21]. After the problem
is solved in the transformed conguration, inverting these
functions allows coming back to the original geometry. This
technique is restricted to 2-D elds satisfying Laplace or
Poisson equation, as in our case, and has been successfully
applied to many engineering problems. A good summary of
the technique and its applications can be read, for instance, in
the rst chapter of [21].
It is well known [21] that the Jacobi elliptic function w =
sn(z,k) maps the interior of a rectangle with vertices K, K,
K + j K
, K + j K
3
_
2
(21)
where
2
and
3
are elliptic theta functions of the second and
third kind with zero argument. These functions are calculated
as follows [22]:
2
=
n=0
2q
_
n+
1
2
_
2
3
= 1 +
n=0
2q
n
2
q = e
L
H
. (22)
With this transformation, the side L/2, L/2 of the rectangle
in plane Z becomes the segment 1, 1 of the real axis of
plane W. The side L/2, L/2+jH of the rectangle becomes the
segment 1, 1/k of the real axis of plane W, whereas the side
L/2, L/2+jH becomes the segment 1, 1/k, and the side
L/2+jH, L/2+jH becomes the rest of the real axis of plane
W [21]. A sketch of the transformation showing the lines of
constants x and y is shown in Fig. 6(a) and (b).
Fig. 6(a) shows a square PDN with L = 1 and H = 1.
This PDN has nine identical pads identied by black circles.
The top and bottom sides of the square are drawn in black
and the left and right sides in gray. This square is mapped in
plane Z with its origin at the center of the bottom side. The
transformation w = sn(z, k) maps points z = x + j y of the
interior of this square into points w = u + j v of the upper half
of W, as drawn in Fig. 6(b). Thus, the origin of plane W is
also the origin of plane Z, and point jK
in Z is transformed
RIUS: IR-DROP IN ON-CHIP POWER DISTRIBUTION NETWORKS OF ICs 517
-0.6 -0.4 -0.2 0 0.2 0.4 0.6
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
x
jy
-0.6 -0.4 -0.2 0 0.2 0.4 0.6
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
x
jy
(a)
-8 -6 -4 -2 0 2 4 6 8
0
2
4
6
8
10
12
14
16
jv
u
-8 -6 -4 -2 0 2 4 6 8
0
2
4
6
8
10
12
14
16
jv
u
(b)
Fig. 6. (a) Square PDN with L = 1, H = 1, nine pads (circles), and a rectangular block (thick line), represented in plane Z. (b) Same PDN, pads, and
block, represented in plane W. Dashed lines are the lines of constants x and y in plane Z (and constants u and v in plane W).
into the innity point in W. The size of pads is also modied,
being greater in W when they are far from the real axis and
smaller when they are close to the real axis. Notice that the
points of the real axis, v = 0 in W, are the transformed points
of the four sides of the rectangle in plane Z.
The current at the four sides of the PDN (the four sides of
the rectangle in Z) is zero. Therefore, the real axis of plane W
must have the same property, that is, the Neumann boundary
condition V/n = 0 must be satised in the real axis of W.
To force this condition, we need to add to W the image of the
upper half-plane [that is, the conjugate of plane W, conj(W)]
including the pads of the original W domain at their conjugate
coordinates.
After this step, we build the innite domain W
= WU
conj(W). By including the current sources in W and conj(W),
we can calculate the IR-drop in this innite domain using the
methods in Section III. However, caution must be taken when
including the current sources (rectangular blocks). Equation
(4) for GMD, as derived in [20], is valid only for rectangular
blocks. Therefore, this solution cannot be used directly in
W
(z)|
2
and a
rotation of angle equal to the argument of f
(z), with f
(z)
being the derivative of the transformation f at point z. In our
case, f
(z) = sn
= WU conj(W).
4) Obtain the IR-drop V
P
at any point P
W
W