IRF630, SiHF630

Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 43 7.0 23 Single
D

FEATURES
200 0.40

Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
Available

RoHS*
COMPLIANT

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

TO-220AB

S S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220AB IRF630PbF SiHF630-E3 IRF630 SiHF630

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta TC = 25 C Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 200 20 9.0 5.7 36 0.59 250 9.0 7.4 74 5.0 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf in Nm A UNIT V

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12). c. ISD 9.0 A, dI/dt 120 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91031 S11-0509-Rev. B, 21-Mar-11 www.vishay.com 1

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 1.7 C/W UNIT

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS

VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V VDS = 200 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 5.4 Ab VDS = 50 V, ID = 5.4 A

200 2.0 3.8

0.24 -

4.0 100 25 250 0.40 -

V V/C V nA A S

VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5

800 240 76 9.4 28 39 20 4.5 7.5

43 7.0 23 nH ns nC pF

VGS = 10 V

ID = 5.9 A, VDS = 160 V, see fig. 6 and 13b

VDD = 100 V, ID = 5.9 A, Rg = 12 , RD = 16 , see fig. 10b

Between lead, 6 mm (0.25") from package and center of die contact

170 1.1

9.0 A 36 2.0 340 2.2 V ns nC

TJ = 25 C, IS = 9.0 A, VGS = 0 Vb TJ = 25 C, IF = 5.9 A, dI/dt = 100 A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91031 S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

ID, Drain Current (A)

101

ID, Drain Current (A)

VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top

101 150 C

100

25 C

100 4.5 V 20 s Pulse Width TC = 25 C 100 101

10-1 4
91031_03

20 s Pulse Width VDS = 50 V 5 6 7 8 9 10

10-1 10-1
91031_01

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 C

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance (Normalized)

ID, Drain Current (A)

101

VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top

3.0 2.5 2.0 1.5 1.0 0.5

ID = 5.9 A VGS = 10 V

4.5 V

100

10-1 10-1
91031_02

20 s Pulse Width TC = 150 C 100 101

VDS, Drain-to-Source Voltage (V)

91031_04

0.0 - 60 - 40 - 20 0

20 40 60 80 100 120 140 160

TJ, Junction Temperature (C)

Fig. 2 -Typical Output Characteristics, TC = 150 C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91031 S11-0509-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix

1600

ISD, Reverse Drain Current (A)

Capacitance (pF)

1200

VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss

101 150 C

800

Coss 400 Crss 0 100 101

25 C 100

VGS = 0 V 0.5
91031_07

0.7

0.9

1.1

1.3

1.5

91031_05

VDS, Drain-to-Source Voltage (V)

VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

VGS, Gate-to-Source Voltage (V)

ID = 5.9 A VDS = 160 V

103
5 2

Operation in this area limited by RDS(on)

16

ID, Drain Current (A)

VDS = 100 V 12 VDS = 40 V

102
5 2

10 s 100 s 1 ms 10 ms TC = 25 C TJ = 150 C Single Pulse 0.1

2 5

10
5 2

4
For test circuit see figure 13

1
5 2

0 0
91031_06

10

20

30

40

50
91031_08

0.1

10

102

103

104

QG, Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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Document Number: 91031 S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix

VDS 10 VGS

RD

D.U.T. + - VDD

ID, Drain Current (A)

RG

10 V
Pulse width 1 s Duty factor 0.1 %

Fig. 10a - Switching Time Test Circuit

2 VDS 0 25 50 75 100 125 150 90 %

91031_09

TC, Case Temperature (C)

10 % VGS td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

10

Thermal Response (ZthJC)

0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse (Thermal Response) PDM t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 0.1 1 10

0.1

10-2 10-5
91031_11

10-4

10-3

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

L Vary tp to obtain required IAS RG VDS

VDS tp VDD

D.U.T. IAS

+ -

V DD

VDS

10 V tp 0.01

IAS
Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91031 S11-0509-Rev. B, 21-Mar-11 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix

600

EAS, Single Pulse Energy (mJ)

500 400 300 200 100 0 VDD = 50 V 25 50 75 100

ID 4.0 A 5.7 A Bottom 9.0 A Top

125

150

91031_12c

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator Same type as D.U.T.

50 k
12 V

10 V QGS

QG
0.2 F

0.3 F

QGD D.U.T.

+ -

VDS

VG

VGS
3 mA

Charge
IG ID Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

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Document Number: 91031 S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer

D.U.T.

Rg

dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor D D.U.T. - device under test

+ VDD

Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va

D.U.T. lSD waveform Reverse recovery current

Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt

VDD

Re-applied voltage Inductor current

Body diode forward drop

Ripple 5 % Note a. VGS = 5 V for logic level devices

ISD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91031.

Document Number: 91031 S11-0509-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220AB
E A

MILLIMETERS DIM.
F

INCHES MIN. 0.167 0.027 0.047 0.014 0.585 0.395 0.095 0.192 0.045 0.240 0.095 0.526 0.131 0.139 0.102 MAX. 0.183 0.040 0.068 0.024 0.610 0.414 0.105 0.208 0.055 0.255 0.115 0.552 0.150 0.155 0.118

MIN. 4.25 0.69 1.20 0.36 14.85 10.04 2.41 4.88 1.14 6.09 2.41 13.35 3.32 3.54 2.60

MAX. 4.65 1.01 1.73 0.61 15.49 10.51 2.67 5.28 1.40 6.48 2.92 14.02 3.82 3.94 3.00

A b b(1) c D E

P H(1) D Q

e e(1) F H(1)
1
L(1)

J(1) L L(1)
M* b(1)

P Q

ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM Xian and Mingxin actual photo
C

b e J(1) e(1)

Revison: 08-Oct-12

Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

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Vishay

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customers technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

Document Number: 91000