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by 2N3055A/D

SEMICONDUCTOR TECHNICAL DATA



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. . . PowerBase complementary transistors designed for high power audio, stepping

motor and other linear applications. These devices can also be used in power
switching circuits such as relay or solenoid drivers, dctodc converters, inverters, or
for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955.




 

CurrentGain BandwidthProduct @ IC = 1.0 Adc

fT = 0.8 MHz (Min) NPN
= 2.2 MHz (Min) PNP
Safe Operating Area Rated to 60 V and 120 V, Respectively

*Motorola Preferred Device

15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 120 VOLTS
115, 180 WATTS

*MAXIMUM RATINGS

Symbol

2N3055A
MJ2955A

MJ15015
MJ15016

Unit

CollectorEmitter Voltage

VCEO

60

120

Vdc

CollectorBase Voltage

VCBO

100

200

Vdc

CollectorEmitter Voltage Base

Reversed Biased

VCEV

100

200

Vdc

EmitterBase Voltage

VEBO

7.0

Vdc

Collector Current Continuous

IC

15

Adc

Base Current

IB

7.0

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C

PD

Rating

Operating and Storage Junction

Temperature Range

TJ, Tstg

115
0.65

180
1.03

CASE 107
TO204AA
(TO3)

Watts
W/_C

_C

65 to + 200

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Max

Unit

RJC

1.52

0.98

_C/W

PD(AV), AVERAGE POWER DISSIPATION (W)

* Indicates JEDEC Registered Data. (2N3055A)

200

150
MJ15015
MJ15016
100

2N3055A
MJ2955A

50

25

50
75
100
125
150
TC, CASE TEMPERATURE (C)

175

200

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data


 
 
 


ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

VCEO(sus)

60
120

Vdc

0.7
0.1

5.0
1.0

30
6.0

5.0
0.2

1.95
3.0

10
20
5.0

70
70

1.1
3.0
5.0

OFF CHARACTERISTICS (1)

*CollectorEmitter Sustaining Voltage

(IC = 200 mAdc, IB = 0)

2N3055A, MJ2955A
MJ15015, MJ15016

Collector Cutoff Current

(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)

2N3055A, MJ2955A
MJ15015, MJ15016

*Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

2N3055A, MJ2955A
MJ15015, MJ15016

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
TC = 150_C)

2N3055A, MJ2955A
MJ15015, MJ15016

Emitter Cutoff Current

(VEB = 7.0 Vdc, IC = 0)

2N3055A, MJ2955A
MJ15015, MJ15016

ICEO

ICEV

mAdc

ICEV

IEBO

mAdc
mAdc

mAdc

*SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(t = 0.5 s nonrepetitive)
2N3055A, MJ2955A
(VCE = 60 Vdc)
MJ15015, MJ15016

IS/b

Adc

*ON CHARACTERISTICS (1)

DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)

VCE(sat)

Vdc

BaseEmitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

0.7

1.8

Vdc

fT

0.8
2.2

6.0
18

MHz

Cob

60

600

pF

td

0.5

tr

4.0

ts

3.0

tf

6.0

*DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

2N3055A, MJ15015
MJ2955A, MJ15016

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

*SWITCHING CHARACTERISTICS (2N3055A only)

RESISTIVE LOAD
Delay Time
Rise Time

Storage Time

(VCC = 30 Vdc, IC = 4.0 Adc,

IB1 = IB2 = 0.4 Adc,
2%
tp = 25 s Duty Cycle

Fall Time

(1) Pulse Test: Pulse Width = 300 s, Duty Cycle

* Indicates JEDEC Registered Data. (2N3055A)

2%.

Motorola Bipolar Power Transistor Device Data

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

 
 
 

200
TJ = 150C

100
hFE , DC CURRENT GAIN

70
50
55C

30
20

25C

VCE = 4.0 V
10
7
5
3
2

0.2

0.3 0.5 0.7 1

2
3
5
IC, COLLECTOR CURRENT (AMP)

10

15

2.8
TJ = 25C
2.4
2
IC = 1 A

1.6

0.8
0.4
0
0.005 0.01 0.02

V, VOLTAGE (VOLTS)

3
2.5
2
1.5
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 10
0.2 0.3

0.5 0.7

10

20

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

TC = 25C

MJ2955A
MJ15016

5.0

2.0
2N3055A
MJ15015
1.0

0.1

0.2

0.3

0.5

1.0

2.0

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMPS)

Figure 4. On Voltages

Figure 5. CurrentGain Bandwidth Product

VCC
+ 30 V

SCOPE

30

0
1N6073

11 V

t, TIME ( s)

7.5

25 s

VCC = 30 V
IC/IB = 10
TJ = 25C

2
tr
1
0.7
0.5
0.3
0.2

tr, tf 10 ns
DUTY CYCLE = 1.0%

10

10
7
5

+13 V

0.05 0.1
0.2
0.5
IB, BASE CURRENT (AMP)

Figure 3. Collector Saturation Region

3.5

0.5

8A

1.2

Figure 2. DC Current Gain

4A

5 V

Figure 6. Switching Times Test Circuit

(Circuit shown is for NPN)

Motorola Bipolar Power Transistor Device Data

0.1

td
0.2

0.3

5
0.5 0.7 1
2
3
IC, COLLECTOR CURRENT (AMP)

10 15

Figure 7. TurnOn Time

 
 
 

10
7
5

400

200

t, TIME ( s)

C, CAPACITANCE (pF)

TJ = 25C

ts
tf

0.1
0.7
0.5
0.3
0.2
0.1

VCC = 30
IC/IB = 10
IB1 = IB2
TJ = 25C
0.2

100

50

Cob

30

2
0.5 0.7 1
3
5
IC, COLLECTOR CURRENT (AMPS)

0.3

2N3055A
MJ15015
MJ2955A
MJ15016

Cib

10

20
1.0

15

2.0

5.0
10
20
50 100 200
VR, REVERSE VOLTAGE (VOLTS)

Figure 8. TurnOff Times

500 1000

Figure 9. Capacitances

COLLECTOR CUTOFF REGION

NPN

PNP

10,000

1000
VCE = 30 V

1000

IC, COLLECTOR CURRENT ( A)

IC, COLLECTOR CURRENT ( A)

VCE = 30 V

100
TJ = 150C
10
100C
1.0

IC = ICES
REVERSE

0.1

FORWARD

100
10

TJ = 150C

1.0
100C
IC = ICES

0.1
REVERSE
0.01

FORWARD

25C

25C
0.01
+ 0.2

+ 0.1

0
0.1
0.2
0.3
0.4
VBE, BASEEMITTER VOLTAGE (VOLTS)

0.5

0.001
0.2

Figure 10. 2N3055A, MJ15015

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMPS)

0.1 ms

10
100 s
1 ms
5
100 ms
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT

dc

10
20
60
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

100

Figure 12. Forward Bias Safe Operating Area

2N3055A, MJ2955A
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa4

+ 0.5

20
30 s

0
+ 0.1
+ 0.2
+ 0.3
+ 0.4
VBE, BASEEMITTER VOLTAGE (VOLTS)

Figure 11. MJ2955A, MJ15016

20

0.1

10
5.0
1.0 ms
2.0
1.0
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT

0.5

0.2

15

100 ms

dc

30
20
60
100
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

120

Figure 13. Forward Bias Safe Operating Area

MJ15015, MJ15016
tion than the curves indicate.
The data of Figures 12 and 13 is based on TC = 25_C;
TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
Motorola Bipolar Power Transistor Device Data

 
 
 

PACKAGE DIMENSIONS

A
N

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.

C
T
E
D

2 PL

0.13 (0.005)
U

T Q

SEATING
PLANE

T Y

Q
0.13 (0.005)

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

INCHES
MIN
MAX
1.550 REF

1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC

0.830
0.151
0.165
1.187 BSC
0.131
0.188

MILLIMETERS
MIN
MAX
39.37 REF

26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC

21.08
3.84
4.19
30.15 BSC
3.33
4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 107
TO204AA (TO3)
ISSUE Z

Motorola Bipolar Power Transistor Device Data

 
 
 


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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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Motorola Bipolar Power Transistor Device Data

*2N3055A/D*

2N3055A/D