Chapter 5-1.

PN-junction electrostatics
In this chapter you will learn about pn junction electrostatics: Charge density, electric field and electrostatic potential existing inside the diode under equilibrium and steady state conditions.

You will also learn about: Poissons Equation Built-In Potential Depletion Approximation Step-Junction Solution

PN-junction fabrication
PN-junctions are created by several processes including:

1. Diffusion 2. Ion-implantation 3. Epitaxial deposition

Each process results in different doping profiles

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Ideal step-junction doping profile

Equilibrium energy band diagram for the pn junction

E Ei n = ni exp F kT
E EF p = ni exp i kT

EF = same everywhere under equilibrium

Join the two sides of the band by a smooth curve.

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Electrostatic variables for the equilibrium pn junction

Potential, V = (1/q) (ECEref). So, potential difference between the two sides (also called built-in voltage, Vbi) is equal to (1/q)(EC).

V =

1 (EC Eref ) q

E =

1 dEC 1 dEi = q dx q dx
= charge density = Ks o

dE = dx

Conceptual pn-junction formation

p and n type regions before junction formation

Holes and electrons will diffuse towards opposite directions, uncovering ionized dopant atoms. This will build up an electric field which will prevent further movement of carriers.

The built-in potential, Vbi

When the junction is formed, electrons from the n-side and holes from the p-side will diffuse leaving behind charged dopant atoms. Remember that the dopant atoms cannot move! Electrons will leave behind positively charged donor atoms and holes will leave behind negatively charged acceptor atoms. The net result is the build up of an electric field from the positively charged atoms to the negatively charged atoms, i.e., from the nside to p-side. When steady state condition is reached after the formation of junction (how long this takes?) the net electric field (or the built in potential) will prevent further diffusion of electrons and holes. In other words, there will be drift and diffusion currents such that net electron and hole currents will be zero.

Equilibrium conditions
Under equilibrium conditions, the net electron current and hole current will be zero. E-field NA = 1017 cm3 hole diffusion current net current = 0 hole drift current electron diffusion current opposite to electron flux electron drift current opposite to electron flux
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ND = 1016 cm3

net current = 0

The built-in potential, Vbi

p-side EC Ei EV EC Ei EV
p Ei EF = kT ln n i
q Vbi = (Ei EF)p-side + (EF Ei)n-side

n-side EF

n EF Ei = kT ln n i
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The built-in potential, Vbi

The built-in potential, Vbi, measured in Volts, is numerically equal to the shift in the bands expressed in eV. Vbi = (1/q) {(Ei EF)p-side + (EF Ei)n-side }
kT p kT n ln n + q ln n q i i pp nn kT = ln n2 q i where pp = hole concentration on p side = and nn = electron concentration on n side

An interesting fact:

pp pn

q Vbi nn = exp kT np

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Majority and minority carrier concentrations

p-side NA ND n-side

pp

nn

np xp xn

pn x
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Built-in potential as a function of doping concentration for an abrupt p+n or n+p junction

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Depletion approximation

dE = Poisson equation dx Ks 0 q = ( N D N A ) for xp x xn K s0 = 0 everywhere else

We assume that the free carrier concentration inside the depletion region is zero.

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Example 1
A p-n junction is formed in Si with the following parameters. Calculate the built-in voltage, Vbi.

ND = 1016 cm3

NA = 1017 cm3

Calculate majority carrier concentration in n-side and p-side. Assume nn = ND = 1016 cm3 and pp = NA= 1017 cm3.

Vbi =

pp nn kT ln n2 q i

= kT ln N A N D n2 q i

Plug in the numerical values to calculate Vbi.

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Example 2
A pn junction is formed in Si with the following parameters. Calculate the built-in voltage, Vbi.
ND = 2 1016 cm3 NA = 1 1016 cm3 NA = 3 1017 cm3 ND = 2 1017 cm3

Calculate majority carrier concentration in n-side and p-side. nn = effective ND = 1016 cm-3; pp = effective NA = 1017 cm3
pp nn kT = kT ln N A N D Vbi = ln n2 n2 q q i i

Here NA and ND are effective or net values.

Plug in the numerical values to calculate Vbi.

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