P3000 LON-CAPA Set 3, Sample solutions

1. Charge Carriers: From Neamen Sect. 3.1. For one sample of Germanium, the
concentration of electrons in the conduction band is n_0 =110
16
cm^-3 at 300K. Enter
the difference between the bottom of the conduction band and the Fermi Energy (i.e. E_c
- E_F) in eV for this semiconductor.

Cor r ect , comput er get s: 1. 80e- 01


For a second sample of Germanium, the concentration of holes in the valence band is p_0
=4.2510
15
cm^-3 at 300 K. Enter the difference between the Fermi energy and the top
of the valence band(i.e. E_F - E_v) in eV for this semiconductor.


Cor r ect , comput er get s: 1. 88e- 01


2. Extrinsic Semiconductor: From Neamen Sect. 3.3. The concentration of electrons in
the conduction band of a sample of Silicon at T =355 K is n_0 =2.9510
16
cm^-3. In the
first box, enter the effective density of states in the conduction band, N_c, for this
semiconductor and temperature in cm^-3. In the second box enter the effective density of
states in the valence band, N_v, for this semiconductor and temperature in cm^-3.

Cor r ect , comput er get s: 3. 60e+19, 1. 34e+19



Enter the intrinsic carrier concentration, n_i, for this semiconductor and temperature in
cm^-3. In the second box, enter the concentration of holes in the valence band, p_0, for
this semiconductor at this temperature in cm^-3. In the third box, enter the letter "n" or
"p" or "i" to indicate whether this is an n-type or a p-type or an intrinsic semiconductor
respectively.

Cor r ect , comput er get s: 2. 48e+11, 2. 08e+06, n


Enter the difference between the bottom of the conduction band and the Fermi Energy
(i.e. E_c - E_F) in eV for this semiconductor at this temperature.

Cor r ect , comput er get s: 2. 18e- 01

3. Extrinsic Semiconductor: From Neamen Sect. 3.3. Consider a sample of GaAs at T
=395 K. Enter the effective density of states in the conduction band, N_c, for this
semiconductor and temperature in cm^-3. In the second box enter the effective density of
states in the valence band, N_v, for this semiconductor and temperature in cm^-3.

Cor r ect , comput er get s: 7. 10e+17, 1. 06e+19



For the semiconductor considered in the previous problem, the difference in energy
between the bottom of the conduction band and the Fermi level at this temperature is E_c
- E_F =0.3 eV. In the first box, enter the concentration of electrons in the conduction
band, n_0, for this semiconductor and temperature in cm^-3. In the second box, enter the
concentration of holes in the valence band, p_0, for this semiconductor at this
temperature in cm^-3. (Hint: Because the bandgap is largely independent of temperature,
you also have enough information to calculate the difference between the Fermi level and
the top of the valence band (i.e. E_F - E_v).)





Now assume that you have another sample of GaAs at T =300 K and that the
concentration of electrons in the conduction band, n_0, is the same as what you
calculated in the previous problem. In the first box, enter the difference between the
bottom of the conduction band and the Fermi Energy (i.e. E_c - E_F) in eV that would
result in the concentration of electrons in the conduction band, n_0, for this sample at 300
K being the same as what you calcuated in theprevious problem (i.e. the answer you
entered into the first box for the previous problem). In the second box, enter the
concentration of holes in the valence band, p_0, in cm^-3, for the second sample at 300
K.




4. Extrinsic Semiconductor: The intrinsic carrier concentration for GaAs at 300 K is
1.8010
6
cm^-3. For a particular sample of GaAs at 300 K, the difference between the
intrinsic Fermi level and the Fermi level is E_Fi - E_F =0.29 eV. In the first box, enter
the concentration of holes in the valence band, p_0, for this sample at 300 K. In the
second box, enter the concentration of electrons in the conduction band, n_0, for this
sample at 300 K.

Cor r ect , comput er get s: 1. 34e+11, 2. 43e+01



Continuing from the previous problem, now consider a second sample of GaAs at T =
415 K. In the first box, enter the intrinsic carrier concentration, n_i, for GaAs at T =415
K. (Hint: You can calculate n_i using the effective density of states functions, N_c and
N_v, which depend on temperature and the bandgap which you can take to be
independent of temperature.) Assume that the concentration of holes in the valence band,
p_0, for the sample in this problem at T =415 K is the same as that of the sample from
the previous problem at 300 K (i.e. p_0 is the value that you entered in the first box of the
previous problem). In the second box, enter the the difference between the intrinsic Fermi
level and the Fermi level (E_Fi - E_F) for the second sample at T =415 K. In the third
box, enter the concentration of electrons in the conduction



5. Charge Neutrality: Neamen Sect. 3.5. A sample of semiconductor at 300 K has
dopant concentrations N_d=1.40E+13cm
-3
and N_a=2.00E+13cm
-3
.

Enter the minority carrier concentration, in cm
-3
, if the semiconductor is Silicon.
-3 10
cm 10 5 . 1 =
i
n
( )
3 - 12 2
2
0
cm 10 00 . 6
2 2
= + |
.
|

\
|
+

=
i
d a d a
n
N N N N
p
3 - 7
0
2
0
cm 10 75 . 3 = =
p
n
n
i



Enter the minority carrier concentration if the semiconductor is GaAs.

-3 6
cm 10 8 . 1 =
i
n
( )
3 - 12 2
2
0
cm 10 00 . 6
2 2
= +
|
.
|

\
|
+

=
i
d a d a
n
N N N N
p
3 -
0
2
0
cm 540 . 0 = =
p
n
n
i



Enter the minority carrier concentration if the semiconductor is Germanium.
-3 13
cm 10 4 . 2 =
i
n
( )
3 - 13 2
2
0
cm 10 72 . 2
2 2
= + |
.
|

\
|
+

=
i
d a d a
n
N N N N
p
3 - 13
0
2
0
cm 10 12 . 2 = =
p
n
n
i

6. Fermi energy Level:
From Neamen Sect. 3.6. A sample of Silicon at 300 K is doped with acceptor atoms
at a concentration of N_a=9.87E+15 cm
-3
.

Enter the value of (E_F-E_v) in eV.
-3 19
cm 10 04 . 1 =
V
N
eV 180 . 0
cm 10 9.87
cm 10 04 . 1
ln K 300 eV/K 10 62 . 8 ln
3 - 15
-3 19
5
=
|
|
.
|

\
|

=
|
|
.
|

\
|
=

a
V
V F
N
N
kT E E

Enter the amount by which the acceptor concentration must be CHANGED (positive
or negative) in order to move the Fermi energy closer to the valence band edge by
an amount kT. Enter your answer in cm
-3
.
We want eV 0.154 K 300 eV/K 10 62 . 8 - eV 180 . 0
5
= =

V F
E E
So:
( )
3 - 16
5
19
cm 10 70 . 2
K 300 eV/K 10 62 . 8
eV 154 . 0
exp 10 04 . 1 exp =
|
.
|

\
|


= |
.
|

\
|
=

kT
E E
N N
V F
V a

Therefore must change acceptor concentration by
-3 16 -3 15 -3 16
initial final
cm 10 71 . 1 cm 10 87 . 9 cm 10 70 . 2 = =
a a
N N
7. Charge Carriers: From Neamen sect. 3.1. Two semiconductor materials have exactly
the same properties except that material A has a bandgap energy of 1.2 eV and material B
has a bandgap energy of 1.45 eV. Determine the ratio of n_i of material A to that of
material B [i.e. n_i(A)/n_i(B)]for T=285 K.


Cor r ect , comput er get s: 1. 62e+02