AN10953

BLF645 10 MHz to 600 MHz 120 W amplifier

Rev. 1 3 March 2011 Application note

Document information Info Keywords Abstract Content BLF645, broadband The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications from HF to 1.4 GHz. This application note describes a broadband amplifier that delivers more than 100 W from 10 MHz to 600 MHz.

NXP Semiconductors

AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

Revision history Rev v.1 Date 20110303 Description initial version

Contact information
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BLF645 10 MHz to 600 MHz 120 W amplifier

1. Introduction
The BLF645 is a 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications in the HF to 1.4 GHz frequency range. This application note describes a broadband amplifier which delivers more than 100 W from 10 MHz to 600 MHz.

019aaa994

Fig 1.

BLF645 10 MHz to 600 MHz amplifier

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BLF645 10 MHz to 600 MHz 120 W amplifier

2. Test summary
The RF performance described in Section 3 may be summarized as follows:
Table 1. Item Specified frequency range Specified drain voltage Quiescent drain current Input return loss Peak CW power Gain Gain flatness Efficiency at 100 W Efficiency flatness at 100 W IMD3 at 100 W PEP Summary of RF performance Performance 10 MHz to 512 MHz 28 V 1A 5 dB; 15 dB typical 100 W; 120 W typical 22.5 dB 1.8 dB 50 % 12 % 30 dBc typical

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BLF645 10 MHz to 600 MHz 120 W amplifier

3. RF Performance
3.1 1-Tone CW
200 PL(M) (W) 160
(1) 019aaa995

120

(2)

80

40

0 10

102 f (MHz)

103

IDq = 1.0 A (1) VDS = 32 V (2) VDS = 28 V

Fig 2.

Peak output power at 3 dB compression as a function of frequency

30 Gp (dB) 26
(2)

019aaa996

(1)

22

18

14 10

102 f (MHz)

103

VDS = 28 V; Pi = 10 dBm (1) IDq = 4.0 A (2) IDq = 1.0 A

Fig 3.

Small-signal power gain as a function of frequency

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BLF645 10 MHz to 600 MHz 120 W amplifier

25 G (dB) 23
(1) (2)

019aaa997

25 (%) 20

21
(3) (4)

15

19

10

17

15 10

102 f (MHz)

0 103

IDq = 1.0 A; PL = 10 W (1) gain; VDS = 32 V (2) gain; VDS = 28 V (3) efficiency; VDS = 28 V (4) efficiency; VDS = 32 V

Fig 4.

Gain and efficiency as a function of frequency

25 G (dB) 23
(1) (2)

019aaa998

80 (%) 70

21

60

19
(3) (4)

50

17

40

15 10

102 f (MHz)

30 103

IDq = 1.0 A; PL = 100 W (1) gain; VDS = 32 V (2) gain; VDS = 28 V (3) efficiency; VDS = 28 V (4) efficiency; VDS = 32 V

Fig 5.

Gain and efficiency as a function of frequency

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BLF645 10 MHz to 600 MHz 120 W amplifier

24 G (dB) 22
(1) (2) (3)

019aaa999

70 (%) 50

20
(4) (5) (6)

30

18 0 40 80 120 PL (W)

10 160

VDS = 28 V; IDq = 1.0 A (1) gain; f = 20 MHz (2) gain; f = 100 MHz (3) gain; f = 500 MHz (4) efficiency; f = 20 MHz (5) efficiency; f = 100 MHz (6) efficiency; f = 500 MHz

Fig 6.

Gain and drain efficiency as a function of output power

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BLF645 10 MHz to 600 MHz 120 W amplifier

24 G (dB) 22
(1) (2) (3)

019aab000

70 (%) 50

20
(4) (5) (6)

30

18 0 40 80 120 160 PL (W)

10 200

VDS = 32 V; IDq = 1.0 A (1) gain; f = 20 MHz (2) gain; f = 100 MHz (3) gain; f = 500 MHz (4) efficiency; f = 20 MHz (5) efficiency; f = 100 MHz (6) efficiency; f = 500 MHz

Fig 7.

Gain and drain efficiency as a function of output power

0 IRL (dB) 5

019aab001

10

15

20

25

10

102 f (MHz)

103

VDS = 28 V; Pi = 10 dBm; IDq = 1.0 A

Fig 8.

Input return loss as a function of frequency

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BLF645 10 MHz to 600 MHz 120 W amplifier

0 IMD (dBc) 20
(2)

019aab002

40

(3) (1)

60

80

10

102 f (MHz)

103

VDS = 50 V; Pi = 10 dBm; IDq = 0.9 A; PL = 100 W (1) 2nd harmonic level (2) 3rd harmonic level (3) system test floor

Fig 9.

2nd and 3rd harmonic levels

Note that the measured 2nd harmonic levels are at the system test limit, so the actual levels may be significantly lower.

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BLF645 10 MHz to 600 MHz 120 W amplifier

3.2 2-Tone CW
24 G (dB) 22
(1) (2) (3) 019aab003

70 (%) 50

20

(4) (5) (6)

30

18 0 40 80 120 160 PL (W)

10 200

VD = 28 V; IDq = 1.0 A; f = 100 kHz (1) gain; f = 20 MHz (2) gain; f = 100 MHz (3) gain; f = 500 MHz (4) efficiency; f = 20 MHz (5) efficiency; f = 100 MHz (6) efficiency; f = 500 MHz

Fig 10. 2-tone power gain and efficiency as a function of output power

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BLF645 10 MHz to 600 MHz 120 W amplifier

0 IMD3 (dBc) 20
(7) (8) (9)

019aab004

(4) (5) (6)

40
(1) (2) (3)

60

38

42

46

50 PL (dBm)

54

VD = 28 V; f = 100 kHz (1) IDq = 1.0 A; f = 20 MHz (2) IDq = 1.0 A; f = 100 MHz (3) IDq = 1.0 A; f = 500 MHz (4) IDq = 2.0 A; f = 20 MHz (5) IDq = 2.0 A; f = 100 MHz (6) IDq = 2.0 A; f = 500 MHz (7) IDq = 4.0 A; f = 20 MHz (8) IDq = 4.0 A; f = 100 MHz (9) IDq = 4.0 A; f = 500 MHz

Fig 11. 3rd order intermodulation distortion as a function of output power

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BLF645 10 MHz to 600 MHz 120 W amplifier

3.3 Alternative input matching

It is possible to improve input return loss at high frequencies by matching the input with a 9:1 transformer constructed with 18 cable, as illustrated in Figure 12. However, this has the undesired effect of reducing gain flatness and low-frequency gain, so it was not used in the design described in this application note.

019aab005

Fig 12. 9:1 input transformer

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BLF645 10 MHz to 600 MHz 120 W amplifier

0 IRL (dB) 5
(1)

019aab006

10

15

20

(2)

25

10

102 f (MHz)

103

VD = 28 V; IDq= 1.0 A; Pi = 10 dBm (1) 9:1 input transformer (2) 4:1 input transformer

Fig 13. Input return loss as a function of frequency

28 G (dB) 24
(2) (1)

019aab007

20

16

12

8 10

102 f (MHz)

103

VD = 28 V; IDq = 1.0 A; Pi = 10 dBm (1) 9:1 input transformer (2) 4:1 input transformer

Fig 14. Small-signal gain as a function of frequency

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BLF645 10 MHz to 600 MHz 120 W amplifier

4. PCB information

D101

R115 L101 C107 C108 R118

C32 C31 C5

R103

R101

R117

C106

R116

C4

C3

U101

R114

C103

C102

U103

C104

R102

C30 R2 C12 C11 C10 L102

R106

D102

C105 U102 R112

R4 C20 T4 T2

R015

R113

R108

E102

R111

C33

C104

C101

Q101 R110

R109

R1

L1

E101

C23 C1 C22

C2

C24 C25

T3

T6

T7

T1

R5

C21

C9

C8

R3 C7

019aab008

(1) PCB is Taconic RF35; r = 3.5 F/m; height = 0.79 mm; Cu thickness = 35 m (2) T4, T6, and T7 cores are bonded to the baseplate with a thermally-conductive adhesive such as Wakefield DeltaBond 152

Fig 15. PCB layout

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BLF645 10 MHz to 600 MHz 120 W amplifier

4.1 RF circuit
T1 Input balun = 55 mm UT047 on 3 2843002402 core T2, T3 Input 25 4:1 = 50 mm UT047-25 on 2 2843002402 core T4, T6 Output 15 4:1 = 50 mm UT085-15 on 2861000202 core T7 Output balun = 80 mm UT085 on 2 2861000202 core

C3 4.7 nF R2 20 1210 R4 C1 J1 NF T1 input balun 4.7 nF T2 input 25 4:1 200 20 W

C5 100 nF

C4 10 F

C20 510 pF T4 output 15 4:1

C22 510 pF C23 T7 4.7 nF C25 output balun J2 NF

3 4
T3 input 25 4:1

1 Q1 5 BLF645 2
R5 200 20 W C21 510 pF T6 output 15 4:1

C2 4.7 nF

4.7 nF C24 510 pF

R1 10 0.5 W

R3 20 1210

R6 10 3W

L1 8T 18 AWG

+28 V @ 10 A GND TP1 TP2

VG
C10 10 F C12 100 nF C12 4.7 nF C7 4.7 nF C9 100 nF C8 10 F

VD
C31 4.7 nF C32 100 nF C30 10 F C33 470 F 63 V 019aab009

Fig 16. RF schematic Table 2. RF circuit bill of materials Description capacitor, 100 V 5 % NP0, 1210 capacitor, 10 V 10 % X7R, 1206 capacitor, 50 V 10 % X7R, 0805 capacitor, 500 V 5 % NP0 capacitor, 100 V 10 % X7S, 2220 capacitor, 100 V 10 % X7R, 1210 capacitor, 63 V, alum electrolytic 8 turns 18AWG on R6 55 mm UT-047 50 coax + (3) Fair-Rite 2861002402 core 50 mm UT-047 25 coax + (2) Fair-Rite 2861002402 core 50 mm UT-085C-15 15 coax + Fair-Rite 2861000202 core 80 mm UT-085 50 coax + (2) Fair-Rite 2861000202 core input balun 4:1 input transformer 4:1 output transformer 1:1 output balun Value 4.7 nF 10 F 100 nF 510 pF ATC 100B 10 F 100 nF 470 F TDK C5750X7S2A106M Remarks

Component C1, C2, C3, C7, C11, C23, C25, C31 C4, C8, C10 C5, C9, C12 C20, C21, C22, C24 C30 C32 C33 L1 T1 T2, T3 T4, T6 T7

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BLF645 10 MHz to 600 MHz 120 W amplifier
RF circuit bill of materials Description resistor, 5 % CC, 0.5 W resistor, 5 % 100 ppm CF, 2010 resistor, 5 % 20 W flange-mount resistor, 5 % 3 W MF Value 10 20 200 10 ATC FR10300N0200J Remarks

Table 2. R1 R2, R3 R4, R5 R6

Component

4.2 Bias circuit

Table 3. L101, L102 C101, C102 C105, C106, D102, U102, R111, R112, R114, E101, E102 C103, C104, C107 C108 D101 U101 Q101 U103 R106 R113, R117, R118 R104, R115 R105 R102, R103, R108 R116 R109 R101 R110 Bias circuit bill of materials Description ferrite bead, 200 mA, 0805 capacitor, 50 V 10 % X7R, 0805 not installed Value 1000 100 nF Remarks Component

capacitor, 50 V 10 % X7R, 0805 capacitor, 100 V 10 % X7R, 1210 LED, green, 1206 voltage regulator transistor NPN 45 V 100 mA GP rail-rail opamp potentiometer, 5 turns cermet resistor, 1% 100 ppm CF, 0805 resistor, 1% 100 ppm CF, 0805 resistor, 1% 100 ppm CF, 0805 resistor, 1% 100 ppm CF, 0805 resistor, 1% 100 ppm CF, 0805 resistor, 1% 100 ppm CF, 0805 resistor, 1% 100 ppm CF, 0805 resistor, 1% 100 ppm CF, 0805

1 F 2.2 F Linear LT3010EMS8E NXP Semiconductors BC847B National LM7321MF 200 10.0 k 1.10 k 2 k 432 52.3 k 5.11 k 0.0 909

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BLF645 10 MHz to 600 MHz 120 W amplifier

VD
L101 BLM21BD102 U101 LT3010EMS8E

IN
C108 2.2 F R118 10.0 k

8 5

1 2

OUT ADJ
R116 52.3 k C106 1 nF C107 1 F R115 1.10 k D101 HSMGC150 green = power

EN

GND: 4, 9 R117 10.0 k

R103 R105 432 200 R102 432 R101 75.0 R105 2.00 k

R104 1.10 k

bias monitor/overdrive E102

R108 432 R113 10.0 k

U103 LM7321MF

C103 1 F

VG
L102 BLM21BD102 ground E101

3
C102 4 100 nF

5 2

1 VGATE

C101 100 nF

R109 5.11 k

C104 1 F

3 1 2
R110 909 C105 100 nF Q101 BC847B

R111 88.7 k

R114 1.10 k

D102 HSMHC150 red = overtemp

R112 10.0 k

400 mV 4 6
U102 2 LT6700CS63 019aab010

Fig 17. Bias circuit schematic diagram

5. Abbreviations
Table 4. Acronym ACPR CCDF DPD IBW LDMOS MOSFET PAR W-CDMA Abbreviations Description Adjacent Channel Power Ratio Complementary Cumulative Distribution Function Digital PreDistortion Integration BandWidth Laterally Diffused Metal-Oxide Semiconductor Metal Oxide Silicon Field Effect Transistor Peak-to-Average power Ratio Wideband Code Division Multiple Access

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6. Legal information
6.1 Definitions
design. It is customers sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). Customer is responsible for doing all necessary testing for the customers applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). NXP does not accept any liability in this respect. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Evaluation products This product is provided on an as is and with all faults basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of non-infringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customers exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose.

Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

6.2

Disclaimers

Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product

6.3

Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

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BLF645 10 MHz to 600 MHz 120 W amplifier

7. Contents
1 2 3 3.1 3.2 3.3 4 4.1 4.2 5 6 6.1 6.2 6.3 7 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test summary. . . . . . . . . . . . . . . . . . . . . . . . . . . 4 RF Performance . . . . . . . . . . . . . . . . . . . . . . . . . 5 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Alternative input matching . . . . . . . . . . . . . . . 12 PCB information. . . . . . . . . . . . . . . . . . . . . . . . 14 RF circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Bias circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 March 2011 Document identifier: AN10953