Photovoltaic Technologies
Others 0.1% CIS 0.5% Ribbon c-Si 2.2% CdTe 4.7% a-Si/ucSi 5.2% mono c-Si 42.2%
III-V
Si
based on p n junction !
The space-charge width W can be obtained from the Poisson equation with the diffusion length : L = (D)1/2 and the mobility : = eD/kT (D : diffusion coefficient).
Diffusion effects are negligible dans a-Si:H (weak mobility). Carrier collection takes place within the space-charge region : the increase of this region is required.
Comparison between crystalline and amorphous silicon a-Si:H (and related materials) solar cells Transparent conducting Oxides (TCO) Multi-junction solar cells Solar modules and applications Thin film crystalline solar cells and heterojunctions
a-Si:H p,n W ~10-20 nm p et n regions are used to set-up the internal electric field but do not significantly contribute to the carrier collection (increase of defect densities in doping regions).
Technological issues : Absorption of high energy photons (penetration length : 12-20 nm) Band diagram of a p-i-n junction Red light absorption (thickness limited by the space-charge width : 0.5 - 1 m)
Space charge regions and internal electric field E(x), without applied external voltage.
a-Ge:H
a-SiGe:H a-Si:H
PH3
2 1
(cm
1
Pumping
Substrate
alpha
B2H 6
Plasma
NH3
-1 0.8
Flexible process allowing the growth of various Si structures (amorphous, microcrystalline), Si doping and Si alloys : SiC, SiGe
-1
1.8
Band gap variation between 1.0 and 2.5 eV, from gaseous mixture (SiH4 with CH4 or GeH4). Low y values are generally used because of defect density increase with alloying
The increase of the crystalline volume fraction in c-Si leads to optical properties close to c-Si.
SiC is generally used for p doped window layer in a-Si:H solar cells
Advantage of partially crystallized Si thin films : significant reduction of mtastability effect (Staebler-Wronski)
i a-Si:H n ZnO Ag
Comparison between crystalline and amorphous silicon a-Si:H (and related materials) solar cells Transparent conducting Oxides (TCO) Multi-junction solar cells Solar modules and applications Thin film crystalline solar cells and heterojunctions
Interband absorption
J(mA/cm2)
0,6 0,5 0,4 0,3 0,2 0,1 0 300 400 500 600 700 800 900 1000 1100
5900K
Wavelength (nm)
conc. Al
TCO Active material Back reflector
Transmission de ZnO:Al
Other applications : Flat pannel displays Architectural glasses for thermal insulation
TCO technologies
Texturation TCO texturation favors light trapping in the cell can naturally appears during deposition (SnO2) or created after growth (ZnO) Typical materials
Technology Cell application Advantages / Drawbacks
Performant Indium : expensive (limited resources) Non-textured Less expensive Textured during growth High temprature process
a-Si:H, CdTe
a/c-Si:H, CIGS
Comparison between crystalline and amorphous silicon a-Si:H (and related materials) solar cells Transparent conducting Oxides (TCO) Multi-junction solar cells Solar modules and applications Thin film crystalline solar cells and heterojunctions
The theoretical best efficiency of over 20% occurs with a combination of 1.8 eV in the top cell (a-Si:H) and 1.2 eV in the bottom.
Tandem can have two or three electrical terminals. The introduction of an internal TCO layer is incompatible with epitaxy
pin/pin Tandem
c-Si:H
I (a-Si:H) ~0.3 m
Back contacts
10 nm P(a-SiC:H)
400
c-Si:H
(Bottom cell)
1000
Glass substrate
15
a-Si:H
AM 1.5, 25 oC
Current (mA)
(Top cell)
10
TCO Glass
light
0.5
1.5
Voltage (V)
Comparison between crystalline and amorphous silicon a-Si:H (and related materials) solar cells Transparent conducting Oxides (TCO) Multi-junction solar cells Solar modules and applications Thin film crystalline solar cells and heterojunctions
Typical cell interconnection systems and packaging (EVA : ethylene-vynil-acetate polymer foil).
Cells can be manufactured on large area substrates (6-8 m2) on 3 mm thick float glass. Series connection needed for pactical applications (Vused = 12 30 V). Laser scribing is used to subdivide TCO and Si layers into parallel stripes. The slight offset between scribes is required for serie connection. w : photo-inactive interconnection width.
Iowa Thin Film Technologies : roll-to-roll production of a-Si/a-Si tandem PV modules on polyimid substrates for consumer applications, capacity about 5 10 MWp, stabilised efficiencies are 4 5%.
Principle and appearance of semi transparent a-Si semitransparent modules (material removal by laser scribing)
The energy gap of a-Si:H is higher, and thus best matched to the spectrum of the indoor light sources Due to the much lower indoor irradiance, light-induced degradation is a lesser issue Applications : calculator, wall mounted sensors, alarm clocks
sdsd
Comparison between crystalline and amorphous silicon a-Si:H (and related materials) solar cells Transparent conducting Oxides (TCO) Multi-junction solar cells Solar modules and applications Thin film crystalline solar cells and heterojunctions
c-Si : thick material required to allow the full conversion of the solar spectrum (indirect band gap) PECVD Si thin films : cost reduction expected
At a thickness of 300 m, the current density is within 5% of the saturation value 300 m is suitable for fabricating high-efficiency c-Si cells.
Calculation ot the maximum achievable current density (MACD) for a AR-coated c-Si solar cell as a function of the cell thickness (AM 1.5 incident spectrum)
However, as the cell thickness is reduced, the surface recombination becomes an inceasingly important component of the total recombination. Wafer thickness and surface recombination should be reduced simultaneously.
Calculation of the Voc variation of a c-Si front textued solar cell as a function of thickness for high and low surface-recombination velocities (front and back velocities assumed to be equal)
passivated interfaces
The vacuum level (that of a free electron at rest outside the solid) is the same for the two Si materials. The band discontinuity is due to the differences of the electron affinities (and doping) :
E c = B A
Ev creates a potential barrier for holes (crossed by tunnelling) Ec favors BSF effect (electrons repelling)
Performances
World record (10 x 10cm) (SANYO) VOC=0.722V JSC=38.64mA/cm2 FF=78.8 = 22% www.sanyo.com
Commercial production
- SANYO (Japan) cells PV modules (205-230 W) - Year production 400-500 MW/y - Module efficiency : ~20% - Available in Europe since 2003