Lecture Goals

EE 332
Understanding of concepts related to: Frequency Analysis in the Design of Analog Circuits Frequency Response/ CE Amplifier Millers Theorem

DEVICES AND CIRCUITS II

Lecture 22
FREQUENCY RESPONSE (2)

FREQUENCYANALYSISINTHEDESIGNOF ANALOGCIRCUITS

BJTANDITSCAPACITIVESTRAY(INTERNAL) Recalldiodecapacitances:
Depletioncapacitance:
Cj =

Intentionalplaced(external)capacitors

Scrapefrequencyresponse Actasblockingcapacitors

Inherent(internal)capacitors
Transistor Diode

sA
W do (1 vD

A:crosssectionarea

W:depletionwidth vD:Diodevoltage j:buildinvoltage

Straycapacitors
Wires Printedcircuitboardpaths

Diffusioncapacitance
CD i D T = g m T VT

93

FREQUENCYRESPONSEOFCESHORTCIRCUIT/SMALL SIGNALMODEL
VCC R2 io ii R1

FREQUENCYRESPONSEOFCESHORTCIRCUIT/SMALL SIGNALPARAMETERS
gm = IC V ;r = F ;ro = A VT gm IC

Smallsignalequivalentfor highfrequencies
IfR10
ii r C C ro io

C b = F gm (diffusioncapacitance) C je = Wdo

sA
V 1 BE VbiBE

(depletioncapacitance)

C = C b + C je

CBE =C =Cje (depletion)+Cb (diffusionunderforwardbias) CCB =C =Cjc (depletionunderreversebias)

C = C jc = Wdo

sA
V 1 BC VbiBC

(depletioncapacitance)

FREQUENCYRESPONSEOFCESHORTCIRCUIT/ GAIN
v = ii [r / /
ii r v C ro gmv io

FREQUENCYRESPONSEOFCESHORTCIRCUIT
Rewritethisshortcircuitgaintoidentifythepoleand zero:
Ai ( s ) = g m r gm 1 + sr (C + C ) 1 j 1 s C

1 1 // ] sC sC

ii 1 + s ( C + C ) r
gmv f2

where: g m r = F = DC short-circuit current gain f f2 Ai ( f ) = g m r f 1+ j f1 f1 = f2 = 1 2 r (C + C ) gm >> f1 2 C

io = gm v v sC so : Ai = gm sC io = 1 ii + s ( C + C ) r

f1

fT

94

FREQUENCYRESPONSEOFCESHORTCIRCUIT GAIN
Ai ( s ) = gm r gm 1 + sr (C + C ) 1 s C
fT

FREQUENCYRESPONSEOFCESHORTCIRCUIT GAIN
fT ismoreoftenusedinspecsheetthanC info., butfT iscurrentdependent:
1 2 F
C = C b + C je = F g m + C je fT = gm 2 ( F g m + C je + C )

where: gm r = F = DC short-circuit current gain f 0; Ai gm r

gmv f2 f1 fT

f ; Ai = gm r

C gm = r (C + C ) C + C

For very small bias levels: fT gm IC = 2 ( C je + C ) 2 VT (C je + C ) gm 1 = 2 F g m 2 F

For "normal" bias levels: fT

Unitygainfrequency:
fT = gm 2 (C + C )

fTandf1 arethebestthatonemayexpectfromatransistor Allowingvoltagegainwillreducethebandwidthsubstantially

MILLERSTHEOREM
iz z i2 NetworkN v1 i1 v2

MILLERSTHEOREM
i1 NetworkN i2

KnownvoltagegainAv
v 2 = Av v1 v v2 iz = 1 = z v1 (1 z 1 ) Av v 2 (1 = z 1 ) Av
v1

KnownvoltagegainAi
i 2 = Ai i1
v2

v z = z ( i1 + i 2 ) = i1 (1 + Ai ) z = i 2 (1 +

1 )z Ai

Sothisisidenticalto
i2 v1 i1 z1 NetworkN z2 v2

Sothisisidenticalto
z1 v1 i1 z2 NetworkN i2 v2

z z1 = 1 Av z2 = z 1 1 Av

z1 = z (1 + Ai ) z 2 = z (1 + 1 ) Ai

95

EXAMPLE
ANSWER
VDD
VDD

EXAMPLE
UseMillersTheorem
VDD

Estimatethepolesofthecircuit.
RD CF Vi RS M1 VO
Vi RS CF

RD RD VO VO M1 Vi Cin RS M1 Cout

EXAMPLE
ANSWER
VDD

EXAMPLE
ANSWER
VDD

in =
=
VO

C in = (1 + AO )C F = (1 + gm RD )C F and
VO

1 R S C in 1 R S (1 + g m R D )C F 1 R D C out 1 R D (1 + 1 )C gm RD F
1

RD

RD

and

RS Vi Cin M1 Cout

C out = (1 +

1 )C AO F

RS Vi Cin M1 Cout

out =
=

1 = (1 + )C gm RD F

96

EXAMPLE
ANSWER
VDD

EXAMPLE
ANSWER
VDD

Calculate f in and f out , if g m = (150 ) 1 , RD = 2 k , RS =1 k and C F = 80 fF

C in = (1 + g m RD )C F
RD VO

Calculate f in and f out , if gm = (150 )1 , RD = 2k , RS =1 k and C F = 80 fF

RS Vi Cin M1 Cout

C out

1 2000)80 f 150 = 1.15 pF 1 = (1 + )C g m RD F = (1 + = (1 + 1 1 2000 150 = 86 fF )80 f

Vi

RD VO RS M1 Cin Cout

f in =

1 2 RS C in

f out

= 1.38 108 Hz 1 = 2 RD C out = 9.2 108 Hz

End of Lecture 22

97