i-v Characteristics of Bipolar Transistor: Common-Emitter Transfer Characteristic

EE 332

DEVICES AND CIRCUITS II

Lecture 4 Bipolar Junction Transistors (2)

Defines relation between collector current and base-emitter voltage of transistor. Almost identical to transfer characteristic of pn junction diode Setting vBC =0 in the collector-current expression,
v BE i =I 1 exp C S V T

Junction Breakdown Voltages

Minority Carrier Transport in Base Region

BJT current dominated by diffusion nbo is equilibrium electron density in pof minority carriers (electrons in npn type base region. and holes in pnp transistors) across base region. Base current consists of hole injection back into emitter and collector and small additional current to replenish holes lost to recombination with electrons in base. Minority carrier concentrations at the 2 ends of base region are:
bo
v exp BE V T

If reverse voltage across either of the two pn junctions in the transistor is too large, corresponding diode will break down. Emitter is most heavily doped region and collector is most lightly doped region. Due to doping differences, base-emitter diode has relatively low breakdown voltage (3 to 10 V). Collector-base diode can be designed to break down at much larger voltages. Transistors must be selected in accordance with possible reverse voltages in circuit.

n (0 ) = n

v n(W ) = n exp BC B bo V T

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Minority Carrier Transport in Base Region (contd.)

For narrow base, minority carrier density decreases linearly across base, diffusion current in base is:
I S n qAD n n 2 i = qAD n bo = W N W B AB B

Base Transit Time

Forward transit time is the time constant associated with storing minority-carrier charge Q required to establish career gradient in base W v region.
Q = qAn bo

NAB= doping concentration in base ni2= intrinsic carrier concentration (1010/cm3) nbo = ni2 / NAB
p

exp BE 1 B 2 V T

v qAD n i = n exp BE 1 T bo V W T B

Saturation current for pnp transistor is I S = qAD p bo = W N

B

qAD p n 2 i W DB B

2 W 2 Q WB B = = I 2 D n 2V n T T

Due to higher mobility of electrons than holes, npn transistor conducts higher current than pnp for given set of applied voltages.

Base transit time places upper limit on useful operating frequency of transistor.

Diffusion Capacitance
For vBE and hence iC to change, charge stored in base region must also change. Diffusion capacitance in parallel with forward-biased base-emitter diode models the change in charge with vBE.
C D =
v I 1 qAn bo W B dQ = exp BE = T F V 2 dv V T VT BE Q po int T

Simplified Cutoff Region Model

If we assume that
v BE < 4 kT q v BC < 4 kT q

where -4kT/q = -0.1 V, then the transport model terminal current equations simplify to
I i =+ S C R I S i = E F I I S S i = B F R

Since transport current normally represents collector current in forward-active region, I C = C

D V F T

In cutoff region both junctions are reverse-biased, transistor is said to be in off state vBE <0, vBC <0

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Simplified Cutoff Region Model (Example)

Problem: Estimate terminal currents using simplified transport model Given data: IS =10-16 A, F = 0.95, R = 0.25, VBE = 0 V, VBC = -5 V Assumptions: Simplified transport model assumptions Analysis: From given voltages, we know that transistor is in cutoff.
I I I =I =I =

Simplified Forward-Active Region Model

In forward-active region, emitter-base junction is forward-biased and collector-base junction is reverse-biased. vBE > 0, vBC < 0 4 kT 4 kT If we assume that v > = 0 . 1V v < = 0 . 1V
BE BC

then the transport model terminal current equations simplify to

i = I exp C S i E = I

C E B

1+

S I

R R = 10 16 A S = 3 10 16 A R

S = 4 10 16 A

v BE V T

S exp F

v BE V T

v i = S exp BE B V T F

v S = I exp BE S V T R v I I S = S exp + BE V T F F v I I I S S = S exp BE V T F R F

i = i F E C i = i F B C i = ( + 1) i E F B

BJT is often considered a current-controlled device, though fundamental forward active behavior suggests a voltage- controlled current source.

Simplified Forward-Active Region Model (Example 1)

Problem: Estimate terminal currents and base-emitter voltage Given data: IS =10-16 A, F = 0.95, VBC =VB - VC= -5 V, IE =100 A Assumptions: Simplified transport model assumptions, room temperature operation, VT = 25.0 mV Analysis: Current source forward-biases base-emitter diode, VBE > 0, VBC < 0, we know that transistor is in forward-active operation region.
I C = I = 0 . 95 100 A = 95 A F E F = 0 . 95 = 19 = F 1 1 0 . 95 F I 100 A E I = = = 5 A B +1 20 F I V = V ln F E = 0 . 69 V BE T I S

Simplified Forward-Active Region Model (Example 2)

Problem: Estimate terminal currents, base-emitter and base-collector voltages. Given data: IS =10-16 A, F = 0.95, VC= +5 V, IB =100 A Assumptions: Simplified transport model assumptions, room temperature operation, VT = 25.0 mV Analysis: Current source causes base current to forward-bias baseemitter diode, VBE > 0, VBC <0, we know that transistor is in forward-active operation region. I = I = 19 100 A = 1.90mA
I

F B C = ( + 1) I = 20 100 A = 2.00mA E F B I V = V ln C = 0 . 764 V BE T I S V = V V = V V = 4 . 24 V B BE BC C C

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Simplified Circuit Model for ForwardActive Region

-Cutoff Frequency, Transconductance

and Transit Time
Forward-biased diffusion and reverse-biased pn junction capacitances of BJT cause current gain to be frequency-dependent. Unity gain frequency is frequency at which current gain is unity f = fT / F is -cutoff frequency F F = ( f )=
1+

F f T

1+

f f B

Current in base-emitter diode is amplified by common-emitter current gain F and appears at collector,base and collector currents are exponentially related to base-emitter voltage. Base-emitter diode is replaced by constant voltage drop model(VBE = 0.7 V) since it is forward-biased in forward-active region. Dc base and emitter voltages differ by 0.7 V diode voltage drop in forwardactive region.

Transconductance is defined by:

gm = di dV C BE Q po int =

V I exp BE V dV S BE T d

I = C V T Q po int

Transit time is given by:

D gm

Simplified Forward-Active Region Model (Example 3)

Problem: Find Q-point Given data: F = 50, R = 1 VBC =VB - VC= -9 V Assumptions: Forward-active region of operation, VBE = 0.7 V Analysis:
+ 8200 I + V =0 E EE BE 8 .3V = 1 .01mA I = E 8200 I 1 .02 mA I = E = = 19 .8 A B +1 51 F I = I = 0 .990 mA F B C V =V ( V ) = 9 + 0 .7 = 9 .7 V BE CE CC V

End of Lecture 4

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