IKA06N60T

^ TrenchStop series

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C

Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Low EMI Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC;Tc=100C 6A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking Code K06T60

P-TO-220-3-31 (TO-220 FullPak)

Type IKA06N60T

Package TO-220-FP

Ordering Code Q67040S4678

Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 175C Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Tj Tstg -40...+175 -55...+175 C
1)

Symbol VCE IC

Value 600 12 6

Unit V A

ICpuls IF

18 18

12 6 IFpuls VGE tSC Ptot 18 20 5 28 V s W

VGE = 15V, VCC 400V, Tj 150C

1)

Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2 Oct-04

Power Semiconductors

IKA06N60T
^ TrenchStop series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 0. 25 mA VCE(sat) V G E = 15V, I C = 6A T j = 25 C T j = 17 5 C Diode forward voltage VF V G E = 0V, I F = 6A T j = 25 C T j = 17 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 18 mA, VCE=VGE V C E = 600V , V G E = 0V T j = 25 C T j = 17 5 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V , V G E = 2 0V V C E = 20V, I C = 6A 3.6 none 40 700 100 nA S A 4.1 1.6 1.6 4.6 2.05 5.7 1.5 1.8 2.05 600 V Symbol Conditions Value min. typ. max. Unit RthJA 80 RthJCD 6.5 RthJC 5.3 K/W Symbol Conditions Max. Value Unit

Power Semiconductors

Rev. 2 Oct-04

IKA06N60T
^ TrenchStop series Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E = 1 5V, t S C 5 s V C C = 400V, T j = 25 C 55 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f = 1 M Hz V C C = 4 80V, I C = 6A V G E = 1 5V P -T O - 2 20- 3- 31 7 nH 368 28 11 42 nC pF

Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 25 C, V R = 4 00V, I F = 6A, di F / dt = 55 0A / s 123 190 5.3 450 ns nC A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 4 00V, I C = 6A , V G E = 0/ 1 5V , RG=23, L 2 ) = 6 0nH , C 2 ) =40pF Energy losses include tail and diode reverse recovery. 9.4 5.6 130 58 0.09 0.11 0.2 mJ ns Symbol Conditions Value min. Typ. max. Unit

1) 2)

Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2 Oct-04

Power Semiconductors

IKA06N60T
^ TrenchStop series Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 17 5 C V R = 4 00V, I F = 6A, di F / dt = 55 0A / s 180 500 7.6 285 ns nC A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 17 5 C, V C C = 4 00V, I C = 6A , V G E = 0/ 1 5V , R G = 23 L 1 ) = 6 0nH , C 1 ) =40pF Energy losses include tail and diode reverse recovery. 8.8 8.2 165 84 0.14 0.18 0.335 mJ ns Symbol Conditions Value min. typ. max. Unit

1)

Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 4 Rev. 2 Oct-04

Power Semiconductors

IKA06N60T
^ TrenchStop series
tp=1s 10A
15A

5s 10s

IC, COLLECTOR CURRENT

T C =80C 10A T C =110C

IC, COLLECTOR CURRENT

1A

50s

5A

Ic

500s 0,1A 5ms DC

Ic
0A 10H z 100H z 1kH z 10kH z 100kH z

1V

10V

100V

1000V

f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V)

25W

8A

20W

IC, COLLECTOR CURRENT

POWER DISSIPATION

6A

15W

4A

10W

Ptot,

2A

5W

0W 25C

50C

75C

100C 125C 150C

0A 25C

75C

125C

TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)

TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)

Power Semiconductors

Rev. 2 Oct-04

IKA06N60T
^ TrenchStop series

15A V GE =20V

15A V GE =20V

IC, COLLECTOR CURRENT

12A

15V 13V

IC, COLLECTOR CURRENT

12A

15V 13V

9A

11V 9V

9A

11V 9V

6A

7V

6A

7V

3A

3A

0A 0V 1V 2V 3V

0A 0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)

VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

15A

3,0V IC =12A 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C IC =3A

IC, COLLECTOR CURRENT

12A

9A

IC =6A

6A T J = 1 7 5 C 2 5 C 0A

3A

0V

2V

4V

6V

8V

10V

0C

50C

100C

VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)

TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)

Power Semiconductors

Rev. 2 Oct-04

IKA06N60T
^ TrenchStop series

t d(off)

td(off) 100ns

t, SWITCHING TIMES

t, SWITCHING TIMES

100ns

tf

tf td(on) tr

10ns

t d(on)

10ns

tr 1ns 0A 3A 6A 9A 12A 15A

1ns

10

30

50

70

90

IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 23, Dynamic test circuit in Figure E)

RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)

VGE(th), GATE-EMITT TRSHOLD VOLTAGE

100ns t d(off) tf

6V 5V 4V 3V m in. 2V 1V 0V -50C m ax.

t, SWITCHING TIMES

typ.

10ns

td(on)

tr

1ns

50C

100C

150C

0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, RG = 23, Dynamic test circuit in Figure E)

TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.18mA)

Power Semiconductors

Rev. 2 Oct-04

IKA06N60T
^ TrenchStop series
*) E on and E ts include losses 0,6 mJ due to diode recovery E ts*

*) E on and E ts include losses due to diode recovery E ts*

E, SWITCHING ENERGY LOSSES

0,5 mJ 0,4 mJ 0,3 mJ 0,2 mJ 0,1 mJ 0,0 mJ 0A

E, SWITCHING ENERGY LOSSES

0,4 mJ

0,3 mJ

E on*

E off E on*

0,2 mJ

E off

0,1 mJ

2A

4A

6A

8A

10A

0,0 mJ

10

30

55

80

IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175C, VCE=400V, VGE=0/15V, RG=23, Dynamic test circuit in Figure E)

RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)

*) E on and E ts include losses due to diode recovery 0,4mJ

0,5m J

*) E on and E ts include losses due to diode recovery E ts * 0,4m J

E, SWITCHING ENERGY LOSSES

0,3mJ E ts* 0,2mJ E off 0,1mJ E on* 0,0mJ 50C 100C 150C

E, SWITCHING ENERGY LOSSES

0,3m J

E off

0,2m J E on * 0,1m J

0,0m J 200V

300V

400V

500V

TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE = 0/15V, IC = 6A, RG = 23, Dynamic test circuit in Figure E)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 6A, RG = 23, Dynamic test circuit in Figure E)

Power Semiconductors

Rev. 2 Oct-04

IKA06N60T
^ TrenchStop series

1nF

VGE, GATE-EMITTER VOLTAGE

15V

C iss

120V 10V 480V

c, CAPACITANCE

100pF

C oss C rss 10pF

5V

0V 0nC

10nC

20nC

30nC

40nC

50nC

0V

10V

20V

QGE, GATE CHARGE Figure 17. Typical gate charge (IC=6 A)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)

12s

IC(sc), short circuit COLLECTOR CURRENT

80A

SHORT CIRCUIT WITHSTAND TIME

10s 8s 6s 4s 2s 0s 10V

60A

40A

tSC,

20A

0A 12V

14V

16V

18V

11V

12V

13V

14V

VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)

VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)

Power Semiconductors

Rev. 2 Oct-04

IKA06N60T
^ TrenchStop series
D =0.5

ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

D =0.5

0.2 10 K/W
0

10 K/W

0.2 0.1 0.05 0.02 0.01

R1

R,(K/W) 0.381 2.57 0.645 1.454 0.062 0.186

, (s)

1.867*10 1.350 -3 2.208*10 -4 5.474*10 -5 5.306*10 -1 5.926*10

R2

-2

0.1 0.05 0.02 0.01

R,(K/W) 0.403 2.57 0.938 2.33 0.071 175

R1

, (s) -2 1.773*10 1.346 -3 1.956*10 -4 4.878*10 -5 4.016*10 -1 5.684*10

R2

10 K/W

-1

10 K/W

-1

C1= 1/R1

C2= 2/R2

C1= 1/R1

C2=2/R2

single pulse

single pulse

10s 100s 1ms 10ms 100ms 1s

10 K/W

-2

10s 100s 1ms 10ms 100ms 1s

tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)

tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)

250ns

0,5C

Qrr, REVERSE RECOVERY CHARGE

trr, REVERSE RECOVERY TIME

T J =175C
0,4C

200ns

150ns

TJ=175C

0,3C

100ns

0,2C

TJ=25C
50ns

T J=25C
0,1C

0ns 200A/s

400A/s

600A/s

800A/s

0,0C 200A/s

400A/s

600A/s

800A/s

diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)

diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)

Power Semiconductors

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Rev. 2 Oct-04

IKA06N60T
^ TrenchStop series

T J =175C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT

8A

-500A/s

T J=25C

-400A/s

6A

T J =25C

-300A/s

4A

T J=175C

-200A/s

2A

Irr,

-100A/s

0A

200A/s

400A/s

600A/s

800A/s

0A/s 200A/s

400A/s

600A/s

800A/s

diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)

diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)

10A

2,0V I F =12A

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

8A

6A 1,5V 3A 1,0V

6A

4A T J =175C 2A 25C

0,5V

0A

0,0V

0,0V

0,5V

1,0V

1,5V

2,0V

0C

50C

100C

150C

VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage

TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature

Power Semiconductors

11

Rev. 2 Oct-04

IKA06N60T
^ TrenchStop series
P-TO220-3-31

dimensions symbol
min A B C D E F G H K L M N P T 10.37 15.86 0.65 [mm] max 10.63 16.12 0.78 min 0.4084 0.6245 0.0256 [inch] max 0.4184 0.6345 0.0306

2.95 typ. 3.15 6.05 13.47 3.18 0.45 1.23 3.25 6.56 13.73 3.43 0.63 1.36

0.1160 typ. 0.124 0.2384 0.5304 0.125 0.0177 0.0484 0.128 0.2584 0.5404 0.135 0.0247 0.0534

2.54 typ. 4.57 2.57 2.51 4.83 2.83 2.62

0.100 typ. 0.1800 0.1013 0.0990 0.1900 0.1113 0.1030

Power Semiconductors

12

Rev. 2 Oct-04

IKA06N60T
^ TrenchStop series
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR

Ir r m

QF

dir r /dt 90% Ir r m

Figure C. Definition of diodes switching characteristics

1
Tj (t) p(t)

r1

r2

rn

r1

r2

rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit Leakage inductance L =60nH and Stray capacity C =40pF.

Power Semiconductors

13

Rev. 2 Oct-04

IKA06N60T
^ TrenchStop series

Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Power Semiconductors

14

Rev. 2 Oct-04