International Journal of Application or Innovation in Engineering & Management (IJAIEM)

Web Site: www.ijaiem.org Email: editor@ijaiem.org, editorijaiem@gmail.com Volume 2, Issue 7, July 2013 ISSN 2319 - 4847

ANALYTICAL SOLUTION OF 3D POISSION EQUATION USING SEPERATION OF VARIABLE METHOD

Prashant Mani1, ManojKumarPandey2
1 Research Scholar, 2Director Department of Electronics and Communication Engineering , SRM University NCR Campus Ghaziabad

ABSTRACT
This paper focuses a solution of three dimensional poission equation using separation of variable method for Fully Depleted Silicon on Insulator(FDSOI) MOSFET .The 3D Approach to solve poissions equation using suitable boundary conditions , results high accuracy to calculate the potential of the channel as compare to 1D ,2D approach .Simple and accurate analytical expression for surface potential in channel are derived .The modeling of MOSFET with 3D help to reduce SCE ,DIBL ,Subthreshold swing etc .Seperation of variable method is used in solution of poission equation , the equation can separated in on side having single variable .

I.

Keywords : SOI MOSFET, Poission Equation, 3D Solution INTRODUCTION CMOS CIRCUITS fabricated on silicon-on-insulator (SOI) wafers are gaining prominence in present-day very large-scale integration (VLSI) technology. SOI technology shows better performance over its bulk counterpart because of the following. As the individual devices are perfectly isolated,latchup can be totally eliminated in SOI CMOS circuits. The higher radiation tolerance of SOI MOSFETs. long channel SOI MOSFETs using the solution of one-dimensional (1-D) Poissons equation.As the device dimensions continue to scale down to deep submicrometer regime to obtain better performance, analytical modeling of these devices becomes more challenging . The assumption of constant surface potential used in the charge sharing models is invalid for submicrometer channel lengths. Although these models are simple, they are not as accurate as the models, which solve 2-D Poissons equation. The solution of 2-D Poissons equation has been obtained using various approaches. The solution of 2-D Poissons equation by power series approach has also been obtained [11].However, the solution of 2-D Poissons equation by power series approach is obtained by neglecting the higher order terms and, hence, it is not as accurate as the other approaches.Analytical solution of 2-D Poissons equation by means of Greens function technique [12] is another method to solve 2-D Poissons equation. Another well-known approach to solve 2-D Poissons equation is to separate the 2-D Poissons equation into a 1-D Poissons equation and a 2-D Laplace equation [13]. The ongoing device geometry scaling has pushed MOSFETs to the regime of both short-channel (for higher speed, lower supply voltage) and narrow-width (for higher density and lower power consumption) MOSFETs. Such MOSFETs, called smallgeometry MOSFETs, are very complex as three-dimensional (3-D) electrostatic effects affect the performance of the transistor. The analytical models for short-channel SOI MOSFETs discussed above take into account the scaling of the channel length and SOI film thickness but fail to take into account the narrow width effects, which become predominant as the width of the transistor is reduced. Narrow-width effects of ultrathin SOI devices are more complicated because of mesa isolation.An analytical model for of mesa-isolated fully depleted (FD) ultrathin SOI MOSFET that takes into account the narrow width effect has been reported [14].This modelsolves 3-D Poissons equation using the separation of variables method. However, the boundary conditions used for the solution of Poissons equation are applicable only for bulk MOSFETs.In fact, to the best of our knowledge, there is no 3-D analytical model for SOI MOSFETs available in the literature that takes into account both short channel and narrow width effects. The 3-D Poissons equation is solved analytically using the separation of variables technique in the next section.

II.

SOLUTION OF 3D POISSONS EQUATION The cross-sectional viewof an n-channel SOIMOSFET along the channel length is shownin Fig. 1(a). The sourceSOI film and drainSOI film junctions are located aty=0 and y= Leff,where Leff is the effective channel length .The front and

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International Journal of Application or Innovation in Engineering & Management (IJAIEM)

Web Site: www.ijaiem.org Email: editor@ijaiem.org, editorijaiem@gmail.com Volume 2, Issue 7, July 2013 ISSN 2319 - 4847
back interfaces are located at Si-SiO2 at x=0 and x= ts, where ts is SOI film thickness. Toxf and toxb are the thickness of frontgate an backgate oxidethicknessVgf and Vgb are the applied potential . In order to analyze the structure shown in Fig. 1, we need to solve both Poissons equation and current continuity equation.However, in the subthreshold regime, the currents are small and Poissons equation alone is sufficient. In this paper, we consider a fully depleted (FD) SOI film. The Poissons equation inthe FD SOI film region is given by

where NA is the doping concentration and is the potential at a particular point (x,y,z) in the SOI film. The boundary conditions required to solve the 3-D Poissons equation are

The boundary conditions given by (2) and (3) indicate that the potential applied at the front (back) gate is the sum of the potential at the front (back) SiSiO interface and the drop across the front (back) gate oxide. In (2) and (3), and are the flatband voltages and and are the interface trapped charges associated with the front and back gates respectively, and and are the permittivities for silicon and silicon dioxide, respectively.Equations (4) and (5) represent the boundary conditions at the source and drain ends of the channel, being the built-in potential of the n -p junctions and is the drain-to-source applied voltage. Equations (6) and (7) indicate that the potential applied at the front gate is the sum of the surface potential at the edge of the transistor and the drop across the sidewall oxide. In order to solve (1), it is separated into 1-D Poissons equation, and 2- and 3-D Laplace equation as

III.

Solution of l(x)

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Web Site: www.ijaiem.org Email: editor@ijaiem.org, editorijaiem@gmail.com Volume 2, Issue 7, July 2013 ISSN 2319 - 4847
In equation 11, l is the solution of 1 D POISSION equation ,using the boundary condition given below.

Now after solving the above boundary condition we find the solution in the form of
(14)

IV.

Solution of s (x,y) In equation 11 ,s is the solution of 2 D laplace equation ,the boundary condtions required to solve the laplace equation are given below.

Fig. 1. (a) Cross sectional view of an n-channel SOI MOSFET

ALONG THE CHANNEL LENGTH AND (B)ALONG THE CHANNEL WIDTH.

(15) (16) (17) (18)

The solution comes in the form of summation of sin and sinhyperbolic terms

(19) Here the terms can be explained as below mentions

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V.

Solution of v (x,y,z) In equation v is the solution of 3D laplace equation ,the boundary conditions equation are given below.

required to solve the laplace

After solving the laplace equation with above given equation we find the solution in the form of

Such that

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Where the terms can be expressed as

here the term equation A.10 and A.11 are internal expression of 3D solution of laplace equation.

VI.

CONCLUSION A 3-D model for SOI MOSFET based on an analytical solution of 3-D Poissons equation is presented . The model takes into account the narrow-width effects in addition to the SCE.The The 3-D Poissons equation is solved analytically using the separation of variables technique in the next section. The solution will then extend to obtain the expression of threshold voltage of the small geometry SOI MOSFET.

Journal Papers: [1] S. T. Liu, W. C. Jenkins, and H. L. Hughes, Total dose radiation hard 0.35 _m SOI CMOS technology, IEEE Trans. Nucl. Sci., vol. 45, pp. 24422449, Dec. 1998. [2] P. Francis, A. Terao, B. Gentinne, D. Flendre, and J. P. Colinge, SOI technology for high-temperature applications, in IEDM Tech. Dig.,1992, pp. 353356. [3] L. Geppert, Solid state, IEEE Spectrum, vol. 36, pp. 5256, Jan. 1999.

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[4] H.-K. Lim and J. G. Fossum, Threshold voltage of thin-film Silicon-On-Insulator (SOI) MOSFETs, IEEE Trans. Electron Devices,vol. ED-30, pp. 12441251, Oct. 1983. [5] S. Veeraraghavan and J. G. Fossum, SCEs in SOI MOSFETs, IEEETrans. Electron Devices, vol. 36, pp. 522528, May 1989. [6] T. C. Hsiao and J. C. S. Woo, Subthreshold characteristics of fully depleted submicrometer SOI MOSFETs, IEEE Trans. Electron Devices, vol. 42, pp. 11201125, Nov. 1995. [7] K. K. Young, SCEs in fully depleted SOI MOSFETs, IEEE Trans. Electron Devices, vol. 36, pp. 399402, Apr. 1989. [8] H.-O. Joachim, Y. Yamaguchi, K. Ishikawa, I. Yasuo, and T. Nishimura,Simulation and two dimensional analytical modeling of subthreshold slope in ultrathin-film SOI MOSFETs down to 0.1_m gate length,IEEE Trans. Electron Devices, vol. 40, pp. 18121817, Nov. 1993. [9] S. R. Banna, P. C. H. Chan, P. K. Ko, C. T. Nguyen, and M. Chan,Threshold voltage model for deep-submicrometer fully depleted SOI MOSFETs, IEEE Trans. Electron Devices, vol. 42, pp. 19491955,1995. [10] A. O. Adan, K. Higashi, and Y. Fukushima, Analytical threshold voltage model for ultrathin SOI MOSFETs including short-channel and floating-body effects, IEEE Trans. Electron Devices, vol. 46, pp. 729737, June 1999. [11] P. C. Yeh and J. G. Fossum, Physical subthreshold MOSFET modelingapplied to viable design of deepsubmicrometer fully depleted SOI lowvoltage CMOS technology, IEEE Trans. Electron Devices, vol. 42, pp. 1605 1613, Nov. 1995. [12] J.-Y. Guo and C.-Y. Wu, A new 2-D analytic threshold voltage model for fully depleted short channel SOI MOSFETs, IEEE Trans. Electron Devices, vol. 40, pp. 16531661, Nov. 1993. [13] J. C. S.Woo, K.W. Terrill, and P. K.Vasudev, Two dimensional analytic modeling of very thin SOI MOSFETs, IEEE Trans. Electron Devices, vol. 37, pp. 19992006, 1990. [14] K.-W. Su and J. B. Kuo, Analytical threshold voltage formula including narrow channel effects for VLSI mesa-isolated fully depleted ultrathin silicon-on-insulator n-channel metaloxidesilicon devices,Jpn. J. Appl. Phys., vol. 34, pp. 40104019, 1995. [ 15] K. O. Jeppson, Influence of the channel width on the threshold voltage modulation of MOSFETs, Electron. Lett., vol. 11, pp. 297299, 1975. [16] L. D. Yau, A simple theory to predict the threshold voltage of short channel IGFETs, Solid State Electron., vol. 17, pp. 10591063, 1974. [17] B. Agrawal, V. K. De, and J. D. Meindl, Three dimensional analytical subthreshold models for bulk MOSFETs, IEEE Trans. Electron Devices, vol. 42, pp. 21702180, Dec. 1995. [18] M. Matloubian, R. Sundaresan, and H. Lu, Measurement and modeling of the sidewall threshold voltage of mesaisolated SOI MOSFETs,IEEE Trans. Electron Devices, vol. 36, pp. 938942, Oct. 1989.

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