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2N4400 / MMBT4400

2N4400

MMBT4400
C

E C B

TO-92
E

SOT-23
Mark: 83

NPN General Purpose Amplifier


This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA.

Absolute Maximum Ratings*


Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
40 60 6.0 600 -55 to +150

Units
V V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4400 625 5.0 83.3 200

Max
*MMBT4400 350 2.8 357

Units
mW mW/C C/W C/W

2001 Fairchild Semiconductor Corporation

2N4400/MMBT4400, Rev A

2N4400 / MMBT4400

NPN General Purpose Amplifier


(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 A, IE = 0 IE = 100 A, IC = 0 VCE = 35 V, VEB = 0.4 V VCE = 35 V, VEB = 0.4 V 40 60 6.0 0.1 0.1 V V V A A

ON CHARACTERISTICS*
hFE DC Current Gain VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 150 mA VCE = 2.0 V, IC = 500 mA IC = 150 mA, IB =15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB =15 mA IC = 500 mA, IB = 50 mA 20 40 50 20 150 0.40 0.75 0.95 1.2 V V V V

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.75

SMALL SIGNAL CHARACTERISTICS


Cob Cib hfe hfe hie hre hoe Output Capacitance Input Capacitance Small-Signal Current Gain Small-Signal Current Gain Input Impedance Voltage Feedback Ratio Output Admittance VCB = 5.0 V, f = 140 kHz VEB = 0.5 V, f = 140 kHz IC = 20 mA, VCE = 10 V, f = 100 MHz VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz 2.0 20 0.5 0.1 1.0 250 7.5 8.0 30 K x 10
-4

6.5 30

pF pF

mhos

SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, IC = 150 mA, IB1 = 15 mA ,VEB = 2 V VCC = 30 V, IC = 150 mA IB1 = IB2 = 15 mA 15 20 225 30 ns ns ns ns

*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%

2N4400 / MMBT4400

NPN General Purpose Amplifier


(continued)

Typical Characteristics

500
V CE = 5V

V CESAT - COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

Typical Pulsed Current Gain vs Collector Current

Collector-Emitter Saturation Voltage vs Collector Current


0.4 = 10 0.3

400 300 200


25 C 125 C

0.2
25 C

125 C

100
- 40 C

0.1
- 40 C

0 0.1

0.3

1 3 10 30 100 I C - COLLECTOR CURRENT (mA)

300

10 100 I C - COLLECTOR CURRENT (mA)

500

V BE(ON) - BASE-EMITTER ON VOLTAGE (V)

V BESAT - BASE-EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current


1
= 10
- 40 C

Base-Emitter ON Voltage vs Collector Current


1 VCE = 5V 0.8
- 40 C 25 C

0.8

25 C 125 C

0.6
125 C

0.6

0.4

0.4 1 I
C

10 100 - COLLECTOR CURRENT (mA)

500

0.2 0.1

1 10 I C - COLLECTOR CURRENT (mA)

25

Collector-Cutoff Current vs Ambient Temperature


I CBO - COLLECTOR CURRENT (nA) 500 100 10 1 0.1 V
CB

Emitter Transition and Output Capacitance vs Reverse Bias Voltage


20 CAPACITANCE (pF) 16 12
C te

= 40V

f = 1 MHz

8
C ob

4
25 50 75 100 125 T A - AMBIENT TEMPERATURE ( C) 150

0.1

1 10 REVERSE BIAS VOLTAGE (V)

100

2N4400 / MMBT4400

NPN General Purpose Amplifier


(continued)

Typical Characteristics

(continued)

Turn On and Turn Off Times vs Collector Current


400
I B1 = I B2 =
Ic 10

Switching Times vs Collector Current


400 I B1 = I B2 = 320
V cc = 25 V Ic 10

320
V cc = 25 V

TIME (nS)

240 160
t off

TIME (nS)

240 160 80 0 10
tf td ts tr

80
t on

0 10

100 I C - COLLECTOR CURRENT (mA)

1000

100 I C - COLLECTOR CURRENT (mA)

1000

Power Dissipation vs Ambient Temperature


1 PD - POWER DISSIPATION (W)

0.75

SOT-223 TO-92

0.5
SOT-23

0.25

25

50 75 100 o TEMPERATURE ( C)

125

150

2N4400 / MMBT4400

NPN General Purpose Amplifier


(continued)

Typical Common Emitter Characteristics

(f = 1.0kHz)

CHAR. RELATIVE TO VALUES AT I C= 10mA

CHAR. RELATIVE TO VALUES AT TA = 25oC

Common Emitter Characteristics


8 V CE = 10 V T A = 25oC

Common Emitter Characteristics


2.4 2 1.6 1.2 0.8 0.4 0 V CE = 10 V I C = 10 mA h re h ie h fe hoe

6 hoe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60

20 40 60 80 T A - AMBIENT TEMPERATURE ( o C)

100

CHAR. RELATIVE TO VALUES AT VCE = 10V

Common Emitter Characteristics


1.3 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0 5 hoe 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 h re h ie I C = 10 mA T A = 25oC h fe

2N4400 / MMBT4400

NPN General Purpose Amplifier


(continued)

Test Circuits
30 V

200

16 V 1.0 K 0 200ns 500

FIGURE 1: Saturated Turn-On Switching Timer

- 1.5 V

6.0 V

NOTE: BV EBO = 5.0 V

1k

37

30 V 1.0 K 0 200ns

50

FIGURE 2: Saturated Turn-Off Switching Time

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First Production

No Identification Needed

Full Production

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Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G