TOSHIBA

Discrete Semiconductors
2SK1358

Field Effect Transistor Silicon N Channel MOS Type (-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
Features Low Drain-Source ON Resistance - RDS(ON) = 1.1 (Typ.) High Forward Transfer Admittance - Yfs = 4.0S (Typ.) Low Leakage Current - IDSS = 300A (Max.) @ VDS = 720V Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25C)
CHARACTERISTIC
Drain-Source Voltage Drain-Gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc = 25C) Channel Temperature Storage Temperature Range

Industrial Applications

Unit in mm

SYMBOL
VDSS VDGR VGSS ID IDP PD Tch Tstg

RATING
900 900 30 9 27 150 150 -55 ~ 150

UNIT
V V V A

W C C

Thermal Characteristics
CHARACTERISTIC
Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient

SYMBOL
Rth(ch-c) Rth(ch-a)

MAX.
0.833 50

UNIT
C/W C/W

This transistor is an electrostatic sensitive device. Please handle with care.

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Electrical Characteristics (Ta = 25C)
CHARACTERISTIC
Gate Leakage Current Drain Cut-off Current Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source ON Resistance Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time

SYMBOL
IGSS IDSS V(BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff

TEST CONDITION
VGS = 25V, VDS = 0V VDS = 720V, VGS = 0V ID = 10mA, VGS = 0V VDS = 10V, ID = 1mA ID = 4A, VGS = 10V VDS = 20V, ID = 4A VDS = 25V, VGS = 0V, f = 1MHz

MIN.
900 1.5 2.0

TYP.
1.1 4.0 1300 100 180 25 40 20 100

MAX.
100 300 3.5 1.4 1800 150 260 50 80 40 200

UNIT
nA A V V S pF

ns

Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge

Qg Qgs Qgd VDD = 400V, VGS = 10V, ID = 9A

120 70 50

240 nC

Source-Drain Diode Ratings and Characteristics (Ta = 25C)

CHARACTERISTICS
Continuous Drain Reverse Current Pulse Drain Reverse Current Diode Forward Voltage

SYMBOL
IDR IDRP VDSF

TEST CONDITION
IDR = 9A, VGS = 0V

MIN.

TYP.

MAX.
9 27 -2.0

UNIT
A A V

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f Notes

The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (ofce equipment, communication equipment, measuring equipment, domestic electrication, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, trafc signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.

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