oxr7uotxuuutotuotu Amrit Chakraborty Ece Roll-33 Mod-1 Mcq question 1).

In GaAs when the electron rises from central valley to satellite valley the e ffective mass of electron becomes a)less b)more c)zero d)infinity 2)which metal is suitable for ohmic contact with p type silicon? a)Fe b)cu c)al d)Au Mod -1 Short question 1)What do you mean by effective mass? Derive expression of effective mass 2)derive steady state diffusion equation for holes in si what do you mean by dif fusion length? Mod-1 Long question 1)what is law of mass action ? explain its significance. 2) write equation for conductivity in terms of carrier concentration, mobility e tc what is understood by carrier relaxation time and hoe mobility is related wit h temp. and carrier relaxation time? Mod -2 Mcq question 1) The quadrant of I_V plot relevant to operation of solar cell is a)1st th 2) if a voltmeter is connected across the terminal of an unbiase d Germenium p-n junction diode the voltmeter reading will be a)0v d)1.0v Mod-2 Short question a) Explain the principle of operation of a solar cell and define ic emf and fill factor photovolta b)0.3v c)0.6v b)2nd c)3rd d)4

b) derive expression for current flowing across a pn junction due to drift and diffusion. Mod-2 Long question a)Briefly discus the dependency of space charge with doping concentration . Dev elop necessary mathematical exprestion b)Derive expression for the current flowing across p-n junction due to drift and diffusion Mod-3 Mcq question a) BJT is

a)a voltage controlled device ed device d)none of these

b)a current controlled device c)a temp controll

b) The output of a CF amplifier is a)amplified f these Mod-3 Short question a)what is early effect? define punch through b)derive relationship between Ico and Icbo and discuss there effects on temp. Mod-3 Long question a)Using appropriate circuit and diagram explain the use of a BJT in CE as a amp lifier b)Describe operation of a p-n-stucture on the basis of two-transistor analogy. Mod-4 Mcq question a) Flat band condition in a MOS capacitor occurs when a) Fs=0 b) Fs>0 c) Fs<0 d) Fs= FF b)Inversion layer in a mos device can be created by a)doping b)impact ionization c)tunneling d)electric field Mod-4 Short question a)What do you mean by pinch-off condition in JFET ? b)what are the advantages and disadvantages of ion-implantation process? Mod-4 Long question a)Discuss the basic principle of operation and id-vds characteristics of n-chan nel JFET. Derive expression of pinch of voltage. b)write short note:1.APD 2.photolithography 3.Ion implantation Am rit Chakraborty Ece Roll-33 Mod-1 Mcq question 1).In GaAs when the electron rises from central valley to satellite valley the e ffective mass of electron becomes a)less b)more c)zero d)infinity 2)which metal is suitable for ohmic contact with p type silicon? b) inverted c)180 out of phase with ip d)all o

a)Fe

b)cu

c)al

d)Au

Mod -1 Short question 1)What do you mean by effective mass? Derive expression of effective mass 2)derive steady state diffusion equation for holes in si what do you mean by dif fusion length? Mod-1 Long question 1)what is law of mass action ? explain its significance. 2) write equation for conductivity in terms of carrier concentration, mobility e tc what is understood by carrier relaxation time and hoe mobility is related wit h temp. and carrier relaxation time? Mod -2 Mcq question 1) The quadrant of I_V plot relevant to operation of solar cell is a)1st th 2) if a voltmeter is connected across the terminal of an unbiase d Germenium p-n junction diode the voltmeter reading will be a)0v d)1.0v Mod-2 Short question a) Explain the principle of operation of a solar cell and define ic emf and fill factor photovolta b)0.3v c)0.6v b)2nd c)3rd d)4

b) derive expression for current flowing across a pn junction due to drift and diffusion. Mod-2 Long question a)Briefly discus the dependency of space charge with doping concentration . Dev elop necessary mathematical exprestion b)Derive expression for the current flowing across p-n junction due to drift and diffusion Mod-3 Mcq question a) BJT is a)a voltage controlled device ed device d)none of these b)a current controlled device c)a temp controll

b) The output of a CF amplifier is a)amplified f these Mod-3 Short question a)what is early effect? define punch through b)derive relationship between Ico and Icbo and discuss there effects on temp. b) inverted c)180 out of phase with ip d)all o

Mod-3 Long question a)Using appropriate circuit and diagram explain the use of a BJT in CE as a amp lifier b)Describe operation of a p-n-stucture on the basis of two-transistor analogy. Mod-4 Mcq question a) Flat band condition in a MOS capacitor occurs when a) Fs=0 b) Fs>0 c) Fs<0 d) Fs= FF b)Inversion layer in a mos device can be created by a)doping b)impact ionization c)tunneling d)electric field Mod-4 Short question a)What do you mean by pinch-off condition in JFET ? b)what are the advantages and disadvantages of ion-implantation process? Mod-4 Long question a)Discuss the basic principle of operation and id-vds characteristics of n-chan nel JFET. Derive expression of pinch of voltage. b)write short note:1.APD 2.photolithography 3.Ion implantation vv Amrit Chakraborty Ece Roll-33 Mod-1 Mcq question 1).In GaAs when the electron rises from central valley to satellite valley the e ffective mass of electron becomes a)less b)more c)zero d)infinity 2)which metal is suitable for ohmic contact with p type silicon? a)Fe b)cu c)al d)Au Mod -1 Short question 1)What do you mean by effective mass? Derive expression of effective mass 2)derive steady state diffusion equation for holes in si what do you mean by dif fusion length? Mod-1 Long question 1)what is law of mass action ? explain its significance.

2) write equation for conductivity in terms of carrier concentration, mobility e tc what is understood by carrier relaxation time and hoe mobility is related wit h temp. and carrier relaxation time? Mod -2 Mcq question 1) The quadrant of I_V plot relevant to operation of solar cell is a)1st th 2) if a voltmeter is connected across the terminal of an unbiase d Germenium p-n junction diode the voltmeter reading will be a)0v d)1.0v Mod-2 Short question a) Explain the principle of operation of a solar cell and define ic emf and fill factor photovolta b)0.3v c)0.6v b)2nd c)3rd d)4

b) derive expression for current flowing across a pn junction due to drift and diffusion. Mod-2 Long question a)Briefly discus the dependency of space charge with doping concentration . Dev elop necessary mathematical exprestion b)Derive expression for the current flowing across p-n junction due to drift and diffusion Mod-3 Mcq question a) BJT is a)a voltage controlled device ed device d)none of these b)a current controlled device c)a temp controll

b) The output of a CF amplifier is a)amplified f these Mod-3 Short question a)what is early effect? define punch through b)derive relationship between Ico and Icbo and discuss there effects on temp. Mod-3 Long question a)Using appropriate circuit and diagram explain the use of a BJT in CE as a amp lifier b)Describe operation of a p-n-stucture on the basis of two-transistor analogy. Mod-4 Mcq question a) Flat band condition in a MOS capacitor occurs when a) Fs=0 b) Fs>0 c) Fs<0 d) Fs= FF b) inverted c)180 out of phase with ip d)all o

b)Inversion layer in a mos device can be created by a)doping b)impact ionization c)tunneling Mod-4 Short question a)What do you mean by pinch-off condition in JFET ?

d)electric field

b)what are the advantages and disadvantages of ion-implantation process? Mod-4 Long question a)Discuss the basic principle of operation and id-vds characteristics of n-chan nel JFET. Derive expression of pinch of voltage. b)write short note:1.APD 2.photolithography 3.Ion implantation vvvv Amrit Chakraborty Ece Roll-33 Mod-1 Mcq question 1).In GaAs when the electron rises from central valley to satellite valley the e ffective mass of electron becomes a)less b)more c)zero d)infinity 2)which metal is suitable for ohmic contact with p type silicon? a)Fe b)cu c)al d)Au Mod -1 Short question 1)What do you mean by effective mass? Derive expression of effective mass 2)derive steady state diffusion equation for holes in si what do you mean by dif fusion length? Mod-1 Long question 1)what is law of mass action ? explain its significance. 2) write equation for conductivity in terms of carrier concentration, mobility e tc what is understood by carrier relaxation time and hoe mobility is related wit h temp. and carrier relaxation time? Mod -2 Mcq question 1) The quadrant of I_V plot relevant to operation of solar cell is a)1st th 2) if a voltmeter is connected across the terminal of an unbiase d Germenium p-n junction diode the voltmeter reading will be b)2nd c)3rd d)4

a)0v d)1.0v Mod-2 Short question

b)0.3v

c)0.6v

a) Explain the principle of operation of a solar cell and define ic emf and fill factor

photovolta

b) derive expression for current flowing across a pn junction due to drift and diffusion. Mod-2 Long question a)Briefly discus the dependency of space charge with doping concentration . Dev elop necessary mathematical exprestion b)Derive expression for the current flowing across p-n junction due to drift and diffusion Mod-3 Mcq question a) BJT is a)a voltage controlled device ed device d)none of these b)a current controlled device c)a temp controll

b) The output of a CF amplifier is a)amplified f these Mod-3 Short question a)what is early effect? define punch through b)derive relationship between Ico and Icbo and discuss there effects on temp. Mod-3 Long question a)Using appropriate circuit and diagram explain the use of a BJT in CE as a amp lifier b)Describe operation of a p-n-stucture on the basis of two-transistor analogy. Mod-4 Mcq question a) Flat band condition in a MOS capacitor occurs when a) Fs=0 b) Fs>0 c) Fs<0 d) Fs= FF b)Inversion layer in a mos device can be created by a)doping b)impact ionization c)tunneling d)electric field Mod-4 Short question a)What do you mean by pinch-off condition in JFET ? b)what are the advantages and disadvantages of ion-implantation process? Mod-4 Long question a)Discuss the basic principle of operation and id-vds characteristics of n-chan nel JFET. b) inverted c)180 out of phase with ip d)all o

Derive expression of pinch of voltage. b)write short note:1.APD 2.photolithography 3.Ion implantation Am rit Chakraborty Ece Roll-33 Mod-1 Mcq question 1).In GaAs when the electron rises from central valley to satellite valley the e ffective mass of electron becomes a)less b)more c)zero d)infinity 2)which metal is suitable for ohmic contact with p type silicon? a)Fe b)cu c)al d)Au Mod -1 Short question 1)What do you mean by effective mass? Derive expression of effective mass 2)derive steady state diffusion equation for holes in si what do you mean by dif fusion length? Mod-1 Long question 1)what is law of mass action ? explain its significance. 2) write equation for conductivity in terms of carrier concentration, mobility e tc what is understood by carrier relaxation time and hoe mobility is related wit h temp. and carrier relaxation time? Mod -2 Mcq question 1) The quadrant of I_V plot relevant to operation of solar cell is a)1st th 2) if a voltmeter is connected across the terminal of an unbiase d Germenium p-n junction diode the voltmeter reading will be a)0v d)1.0v Mod-2 Short question a) Explain the principle of operation of a solar cell and define ic emf and fill factor photovolta b)0.3v c)0.6v b)2nd c)3rd d)4

b) derive expression for current flowing across a pn junction due to drift and diffusion. Mod-2 Long question

a)Briefly discus the dependency of space charge with doping concentration . Dev elop necessary mathematical exprestion b)Derive expression for the current flowing across p-n junction due to drift and diffusion Mod-3 Mcq question a) BJT is a)a voltage controlled device ed device d)none of these b)a current controlled device c)a temp controll

b) The output of a CF amplifier is a)amplified f these Mod-3 Short question a)what is early effect? define punch through b)derive relationship between Ico and Icbo and discuss there effects on temp. Mod-3 Long question a)Using appropriate circuit and diagram explain the use of a BJT in CE as a amp lifier b)Describe operation of a p-n-stucture on the basis of two-transistor analogy. Mod-4 Mcq question a) Flat band condition in a MOS capacitor occurs when a) Fs=0 b) Fs>0 c) Fs<0 d) Fs= FF b)Inversion layer in a mos device can be created by a)doping b)impact ionization c)tunneling d)electric field Mod-4 Short question a)What do you mean by pinch-off condition in JFET ? b)what are the advantages and disadvantages of ion-implantation process? Mod-4 Long question a)Discuss the basic principle of operation and id-vds characteristics of n-chan nel JFET. Derive expression of pinch of voltage. b)write short note:1.APD 2.photolithography 3.Ion implantation otuotuotuotuotuotuotuototuo54545455555555555555555555555555555555555555555555555 55555555555555555555555555555555555555555555555555555555555555555555555555555555 55555555555555555555555555555555555555555555555555555555555 b) inverted c)180 out of phase with ip d)all o