Leonid V. Butov UCSD Physics Department Introduction General overview of exciton condensation Cold exciton gases in coupled quantum wells Phenomena in cold exciton gases Condensation, Coherence, and Pattern Formation Trapping and control of exciton gases Optical traps Electrostatic traps Excitonic Circuits presentations by Aaron Hammack Alex High Sen Yang
In collaboration with: Michael Fogler, Martin Griswold, Aaron Hammack, Alex High, Jason Leonard, Ekaterina Novitskaya, Averi Thomas, Alex Winbow, Sen Yang (UCSD) Alexei Ivanov, Leonidas Mouchliadis, Lois Smallwood (Cardiff University) Ben Simons (Cambridge), Leonid Levitov (MIT) Micah Hanson, Arthur Gossard (UCSB)
polariton laser macroscopic occupation of coupled exciton-photon mode thermal equilibrium is not required
A. Imamoglu, R.J. Ram, S. Pau, Y. Yamamoto (1996)
Bose Einstein condensate in dilute exciton gas (naBD << 1) excitons are (interacting) Bose particles similar to hydrogen atoms below Tc thermal distribution of excitons leads to their condensation in k-space
L.V. Keldysh, A.N. Kozlov (1968)
excitonic insulator (BCS-like condensate) in dense electron-hole system (naBD >> 1) excitons are similar to Cooper pairs below Tc electrons and holes bind to pairs excitons forming BCS-like condensate
L.V. Keldysh, Yu.E. Kopaev (1964)
T _ + + _
exciton gas k-space condensation BEC of bosons
D~
electron-hole plasma
_
e&h Fermi-surfaces matched mismatched
_ +
+ n
naB 1 transition from BEC to BCS can occur with increasing density transition from BEC or BCS to laser can occur with increasing coupling of excitons to photons
P.B. Littlewood, P.R. Eastham, J.M.J. Keeling, F.M. Marchetti, B.D. Simons, M.H. Szymanska, J. Phys. 16, S3597 (2004)
Experimental systems
electron-hole liquid polariton laser
Ge Si
Bose Einstein condensate
Microcavity polaritons
2 =2 dB = mk BT
1/ 2
transition from classical to quantum gas takes place when thermal de Broglie wavelength is comparable to interparticle separation
3D: dB = n 1 3
2 = 2 3 TdB = n mk B
2
TBEC = 0.527TdB
10 -6
2D: dB = n 1 2
2 = 2 TdB = n~3K mk B
for n = 1010 cm-2 per spin state ( < nMott ~ 1/aB2 ~ 1011 cm-2), M = 0.22 m0
160nm
at T=1 K
A.L. Ivanov, P.B. Littlewood, H. Haug, PRB 59, 5032 (1999) Yu.M. Kagan, lectures W. Ketterle, N.J. van Drutten, PRA 54, 656 (1996)
for N=nS~105
superfuid density ns / n
temperature of onset of local superfluidity Bogoliubov temperature 1 Tc = TdB 1.7 K onset of nonzero order parameter ln ln(1/ na 2 )
lnln(1/na2)=13 for 1/na2=10-108 for lnln(1/na2)=1.5
pairing of vortices = onset of macroscopic superfluidity which is not destroyed by vortices
V.N. Popov, Theor. Math. Phys. 11, 565 (1972) D.S. Fisher, P.C. Hohenberg, PRB 37, 4936 (1988)
1
Kosterlitz-Thouless temperature
T K T TdB ln ln (1 / n a 2 ) 1K 1 + ln ln (1 / n a 2 )
TBEC=0
TKT TB
T c T dB
1 0 .6 K ln ( 4 ) + ln ln (1 / n a 2 )
103-106 times longer exciton lifetime due to separation between electron and hole layers
GaAs/AlGaAs CQW
realization of cold exciton gas in separated layers was proposed by Yu.E. Lozovik & V.I. Yudson (1975); S. I. Shevchenko (1976); T. Fukuzawa, S.S. Kano, T.K. Gustafson, T. Ogawa (1990)
103 times shorter exciton cooling time than that in bulk semiconductors
e
A.L. Ivanov, P.B. Littlewood, H. Haug (1990)
E z
AlAs/GaAs CQW
exciton dispersion
1 0.1
high quality CQW samples with small in-plane disorder are required to overcome exciton localization
Dipole-dipole repulsive interaction stabilizes exciton state against formation of metallic electron-hole droplets
D. Yoshioka, A.H. MacDonald, J. Phys. Soc. Jpn. 59, 4211 (1990) X. Zhu, P.B. Littlewood, M. Hybertsen, T. Rice, PRL 74, 1633 (1995)
+ +
_ _
the ground state of the system is excitonic results in effective screening of in-plane disorder
A.L. Ivanov, EPL 59, 586 (2002) R. Zimmermann presentation by Leonidas Mouchliadis
PL Intensity
energy shift: E ~ 4ne2d/ estimate for exciton density approximation for short-range 1/r3 interaction
C. Schindler, R. Zimmermann, arXiv:0802.3337 [PRB 78, 045313 (2008)]
1.54 1.55 1.56 1.57
Energy (eV)
density is higher
T. Fukuzawa, E.E. Mendez, J.M. Hong, PRL 64, 3066 (1990); J.A. Kash, M. Zachau, E.E. Mendez, J.M. Hong, T. Fukuzawa, PRL 66, 2247 (1991).
0.10
r -1 (ns - 1)
0.06
8 4 0
12
-1 (ns - 1)
0.08
L.V. Butov, A. Zrenner, G. Bohm, G. Weimann, J. de Physique 3, 167 (1993); L.V. Butov, A. Zrenner, G. Abstreiter, G. Bohm, G. Weimann, PRL 73, 304 (1994); L.V. Butov, A.I. Filin, PRB 58, 1980 (1998).
tic gne Ma
ld Fi e
ld ( F ie
(T)
T)
0.0 10
12
0 .005
8 4 0
(T)
enhancement of exciton
Butov et al. PRL 73, 304 (1994) PRB 58, 1980 (1998) PRL 86, 5608 (2001) Sen Yang et al. PRL 97, 187402 (2006)
0 .06
12 8 4 0
-1 (ns -1)
mobility
5 4 ) 3 re (K 2 er atu Temp
0.000 6
0.12 0 .10 0 .08
r 1 (ns -1)
-
experimental evidence for phenomena expected for exciton BEC are observed below TdB consistent with onset of radiative decay rate superradiance
0.0 20 0.0 15
gn Ma c eti ld Fie
gn Ma
cF eti ield
(T )
coherence length
800.4 801.0 801.6
http://physics.ucsd.edu/~lvbutov/
e = 1 2 + e = 1 2
e = 1 2 + h = 1 2
r -1 (n s -1)
0.015
ield ic F net
I.B. Spielman, J.P. Eisenstein, L.N. Pfeiffer, K.W. West, PRL 84, 5808 (2000)
(T)
recombination of excitons
tunneling of electrons
? for both: exciton in the initial state, no exciton in the final state
spontaneous coherence
Sen Yang et al. PRL 97, 187402 (2006) arXiv:0804.2686v1 presentation by Sen Yang
800.4 801.0 801.6
=5
0.02
1.24
1.26
1.28
excitonic devices
A. High et al. Science 321, 229 (2008) presentation by Alex High
1.563
1.567
Pattern Formation
external ring inner ring
same
Position on the ring (m)
800
PL intensity
400
ring fragmentation
100
200
300
400
500
Peak number
20
40
ring fragmentation into spatially ordered array of beads appears abruptly at low T
0 0
4 T (K)
T=4.7 K
high T
low T
observed features in exciton PL pattern inner ring external ring localized bright spots MOES
high-T phenomena observed up to tens of K where exciton gas is classical their origin is classical
presentation by Aaron Hammack L.V. Butov, A.C. Gossard, and D.S. Chemla, cond-mat/0204482 [Nature 418, 751 (2002)]
A.L. Ivanov, L. Smallwood, A. Hammack, Sen Yang, L.V. Butov, A.C. Gossard, cond-mat/0509097 [EPL 73, 920 (2006)]
L.V. Butov, L.S. Levitov, B.D. Simons, A.V. Mintsev, A.C. Gossard, D.S. Chemla, cond-mat/0308117 [PRL 92, 117404 (2004)] R. Rapaport, G. Chen, D. Snoke, S.H. Simon, L. Pfeiffer, K.West, Y.Liu, S.Denev, cond-mat/0308150 [PRL 92, 117405 (2004)]
indirect exciton PL
localized bright spots have hot cores no hot spots in the ring
external ring is far from hot excitation spot due to long lifetimes of indirect excitons TX Tlattice
external ring is the region where the cold and dense exciton gas is created
Coherence
presentation by Sen Yang
left arm
right arm
Sen Yang, A. Hammack, M.M. Fogler, L.V. Butov, A.C. Gossard, cond-mat/0606683 [PRL 97, 187402 (2006)].
3.8 K
0 0
Interference Visibility
0.3 0.2 0.1 2
9.1 K
100 x ( m)
200
an enhancement of the exciton coherence length is observed at temperatures below a few Kelvin the increase of the coherence length is correlated with the macroscopic spatial ordering of excitons at T=2 K the exciton coherence length ~ 2 m strongly exceeds the classical value ~ dB ~ 0.1 m
0.3
0.2
10
0.1
10
Temperature (K)
M ( m)
20
30
nk = d 2 re ikr g (1) ( r )
a condensate in k-space
k ~ 1
800.4
801.0
801.6
4 6 8 Temperature (K)
0 10
~ 2 m
phase-breaking time
linewidth c ~ 1 ps
= 2 D ~ a few ns
for D ~ 10 cm 2 s
rec ~ 40 ns
Sen Yang et al, cond-mat/0606683 [PRL 97, 187402 (2006)] J. Kasprzak et al., Nature 443, 409 (2006)
polaritons in MC
broad linewidth for polariton condensate above threshold suggested explanation: due to density fluctuations D.N. Krizhanovskii et al, this conference width of tunneling peak > kBT
e-e bilayers
I.B. Spielman, J.P. Eisenstein, L.N. Pfeiffer, K.W. West, PRL 84, 5808 (2000)
NA=sin
1 = + 2 Q
2 x
without taking into account spatial resolution taking into account spatial resolution
1 Q
2 4 6 8 10
Temperature (K)
L. Mouchliadis, A. L. Ivanov, arXiv:0802.4454 [PRB 78, 033306 (2008)] * M.M. Fogler, Sen Yang, A.T. Hammack, L.V. Butov, A.C. Gossard, arXiv:0804.2686 [PRB 78, 035411 (2008)]
@
observed in a cold exciton gas at low temperatures below a few K in a system of indirect excitons in the external ring far from hot excitation spot observed in external ring on interface between hole-rich area and electron-rich area characterized by repulsive interaction ( not driven by attractive interaction)
4 T (K)
+ +
_ _
instability can result from quantum degeneracy in a cold exciton system due to stimulated kinetics of exciton formation
w ~ 1 + N E =0 = e
TdB T
=e
2 =2 nx mgk BT
L.S. Levitov, B.D. Simons, L.V. Butov, PRL 94, 176404 (2005)
Excitonic devices methods which allow fast control on timescale much shorter than exciton lifetime
trap can be switched on and off no heating in the trap center excitons are cold in the trap ability to form various potential patterns
trap profile
high density
100 m
A. Hammack, M. Griswold, L.V. Butov, A.L. Ivanov, L. Smallwood, A.C. Gossard, cond-mat/0603597 [PRL 96, 227402 (2006)]
Pex = 75 W Vg = -1.2 V = 4 ns
50 (ns)
experiment
theory
observed hierarchy of times (exciton cooling time) < (trap loading time) < (exciton lifetime in the trap) cooling to 1.5 K < 4 ns loading ~ 40 ns lifetime ~ 50 ns 10 s is favorable for creating a dense and cold exciton gas in the traps and its control in situ
A. Hammack, L.V. Butov, L. Mouchliadis, A. L. Ivanov A.C. Gossard, PRB 76, 193308 (2007)
Excitonic devices
methods which allow fast control on timescale much shorter than exciton lifetime
the ability to control electron fluxes by an applied gate voltage electronic devices mesoscopics
the field which concerns electron transport in a potential relief
potential energy of indirect excitons can be controlled by an applied gate voltage virtually any in-plane potential relief can be created for excitons by the appropriately designed voltage pattern, e.g. traps, quantum point contacts, lattices
E = eFz d
this relief can be rapidly controlled in-situ by varying the electrode voltages
the ability to control exciton fluxes by an applied gate voltage excitonic devices mesoscopics of bosons in semiconductors
Experimental obstacle in early works in-plane electric field dissociated excitons Solution: to position CQW layers closer to the homogeneous bottom electrode
1999 calculations 2005 experiment A.T. Hammack, N.A. Gippius, Sen Yang, G.O. Andreev, L.V. Butov, M. Hanson, A.C. Gossard, cond-mat/0504045 [JAP 99, 066104 (2006)] CQW far from top gate reduces in plane field, Fr no exciton dissociation
dissociation rate vs Fr
D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Wood, C.A. Burrus, PRB 32, 1043 (1985)
Photon storage
store photons in the form of indirect excitons storage and release of photons is controlled by gate voltage pulses
prototype of storage device reaches sub-ns switching time and several s storage time
A.G. Winbow, A.T. Hammack, L.V. Butov, and A.C. Gossard, Nano Letters 7, 1349 (2007) A.G. Winbow, L.V. Butov, and A.C. Gossard, arXiv:0807.4920v1
OFF
ON
QWs
Intensity
energy bump controlled by the Gate exciton flow is off exciton flow is on
ON
OFF
20
7.0
7.5
Distance ( m)
Time (ns)
prototype of EXOT reaches a contrast ratio > 30 between ON and OFF state with operation at speeds > 1 GHz
A.A. High, A.T. Hammack, L.V. Butov, M. Hanson, A.C. Gossard, Opt. Lett. 32, 2466 (2007) A.A. High, E.E. Novitskaya, L.V. Butov, M. Hanson, A.C. Gossard, Science 321, 229 (2008)
Star Switch Flux of excitons photoexcited at is directed by gate control. Flux merger Two fluxes of excitons photoexcited at are combined by gate control. The device can implement sum operation and logic AND gate with 1 set at Poutput=Pleft+Pright and 0 at Poutput<Pleft+Pright excitonic circuits perform operations on excitons that can be also viewed as operations on photons using excitons as intermediate media
A.A. High, E.E. Novitskaya, L.V. Butov, M. Hanson, A.C. Gossard, Science 321, 229 (2008)
0 1
Poutput=Pleft
Poutput=Pright
left on right on left off right off
Poutput=Pleft+Pright
directional switch
10 m
g1 1 g3
Intensity
g2 2 4 3
flux merger
left+right left right
20
l , m
image of gates
T (K)
T phonon ~ 100 mK
0 50 100
Time (ns)
0.1
<< TdB ~ 3K
Evaporative cooling
Excitons with higher energy easier escape trap. This increases relative occupation of lower energy states cooling of exciton gas
laser
laser
x
A.T. Hammack, N.A. Gippius, Sen Yang, G.O. Andreev, L.V. Butov, M. Hanson, A.C. Gossard, cond-mat/0504045 [JAP 99, 066104 (2006)]
somehow similar to Sisyphus cooling used to cool atoms below the Doppler limit
Using elevated trap for studying individual exciton states in disorder potential
elevated trap technique
real trap Et < Esurr elevated trap e Et > Esurr
introduce effective temperature T ) =n n ~ exp ( k T
deloc
s1 g2 s2 t
g1
y
10 m 1
x
g3
h loc
s3
Energy (eV)
real trap
in-plane disorder potential in QWs forms mainly due to QW width and alloy 0 fluctuations
PL Intensity
1.548
1.552
E x
esc , = 1 + -5
1 +0 opt =
intermediate regime
1.564 2 180 elevated eV trap 3 4
1.563
1.568 1
sharp lines emerge at the transition from the real trap to elevated trap
I2/I1
real trap
0 -10 0
elevated trap
10 20
Energy (eV)
1.567
emission of individual exciton states localized in local minima of disorder potential (2-4) and delocalized exciton states (1)
A.A. High, A. T. Hammack, L.V. Butov, L. Mouchliadis, A. L. Ivanov, M. Hanson, and A.C. Gossard, arXiv:0804.4886v1
Et - Eg (meV)
Vt= -.70V
2x
T=10K
-.65V
7.0K
-.60V
2x
5.1K
E = eFz d
-.55V
2x 2 1
4.5K
-.50V
1x 1.562
2.7K 1.568
d 10.7 nm d nominal
Energy (eV)
4 1.562
1 1.567 1 2 3 4
1.567
Energy (eV)
2.5
Energy (eV)
relative intensity of lines 2-4 in the elevated trap regime reduces with increasing Tbath
10
1.560
-0.7
-0.5
I2/I1 0.0 0
Temperature (K)
1140 W
1x
n (cm-2)
10
8
2x10
7x10
Density dependence
FWHM ( eV) FWHM ( eV) FWHM ( eV)
1400 800 200 1800
1200 600 0 200
FWHM ( eV)
470 W
exp
2x
(4) (5)
theory
deloc loc
sum
150 W
9x
Energy (eV)
36 W
4 3 2 1
38x
deloc
hom
(1)
(3)
inhom
sum
9.1 W
60x
PL Intensity
1.65 W
450x
3 2
100
loc
8 m
y E
(2)
10
0
inelastic elastic
1.562
1.569 1.562
1.569
Energy (eV)
Energy (eV)
Pex (W)
10
10
10
0.0
(1) Energy increases due to repulsive ex-ex interaction. (2) Intensity saturates: no more than one exciton can occupy potential minimum due to dipole blockade (3) Disorder potential is effectively screened due to ex-ex interaction. (4) Homogeneous broadening due to ex-ex interaction increases with density and dominates the linewidth at high densities. (5) Homogeneous broadening is lower for localized excitons. Localization suppresses scattering.
Diamond-shaped traps
Circle Trap
D
3 m circle trap
20 m circle trap
D
Conical Trap
Concentric Rings Trap
Elevated Trap
20 m diamond trap
Energy (meV)
<p> (ns)
10
r
ex
S z = +1 1 3 e,+ h 2 2
<P> (%)
P=
5 10 0 0 10
p +r
1 1
e
S z = 2 1 3 e, h 2 2
e h
S z = +2 1 3 + e,+ h 2 2
p = 2 ( e + h ) + ex
1
Tbath (K)
0 0 5 10
c
Tbath (K)
rcloud (m)
dark states
P p =r 1 P
30
<P> (%)
20 10 0
p drops with n
ltravel increases with n
100 1000
20
10
100
1000
PHWHM (%)
10
Pex (W)
10
30 20 10 0 0 10
Pex (W)
<p> (ns)
b
10
rcloud (m)
20
PHWHM/ Pmax
polarization is observed up to several m away from the excitation spot spin transport of excitons
0.5 0 10 20
0 1 10 100
nr=0 (109/cm2)
rcloud (m)
radiative decay rate enhancement of exciton mobility scattering rate with increasing density coherence length
-1 (ns -1
0.0 00 6
0.1 2 0 .10
0. 06
12
0. 04
4 0
4 5 K) 3 re( era tu Te mp
0.0 2 6
-1 (ns-1 )
0 .08
PRL 73, 304 (1994) PRB 58, 1980 (1998) PRL 86, 5608 (2001) PRL 97, 187402 (2006)
spontaneous coherence
800.4 801.0 801.6
A new low-temperature state the macroscopically ordered exciton state was observed
ie ld
ld Fi e tic g ne Ma
(T )
Application: Traps were used for studying individual exciton states in disorder potential
Acknowledgements UCSD Group: Aaron Hammack Alex High Jason Leonard Mikas Remeika Alex Winbow Sen Yang Martin Griswold James Lohner Katya Novitskaya Averi Thomas Joe Graves Visiting scientists: Nikolai Gippius Anton Mintsev supported by ARO, NSF, DOE Collaborators: Gerhard Abstreiter, WSI, Germany Daniel Chemla, UCB&LBNL Valerii Dolgopolov, ISSP RAS Alexander Dzyubenko, CSB Michael Fogler, UCSD Arthur Gossard, UCSB Atac Imamoglu, UCSB Alexei Ivanov, Cardiff University, UK Leonid Levitov, MIT Peter Littlewood, Cambridge, UK Yuri Lozovik, IS RAS Ben Simons, Cambridge, UK Arthur Zrenner, WSI, Germany