N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5 * Spice model available

ZVN4310A

D G

E-Line TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Practical Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Practical Power Dissipation at T amb=25C* Operating and Storage Temperature Range SYMBOL V DS ID I DP I DM V GS P tot P totp T j :T stg VALUE 100 0.9 1 12 20 850 1.13 -55 to +150 UNIT V A A A V mW W C

*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 9 0.36 0.48 600 0.5 0.65 100 1 3 20 10 100 TYP. MAX. UNIT CONDITIONS. V V nA A A A mS I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125C (2) V DS=25 V, V GS=10V V GS=10V,I D=3A V GS=5V, I D=1.5A V DS=25V,I D=3A

g fs

3-393

ZVN4310A
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. C iss C oss TYP. MAX. 350 140 UNIT pF pF V DS=25 V, V GS=0V, f=1MHz CONDITIONS.

C rss t d(on) tr t d(off) tf

30 8 25 30 16

pF ns ns ns ns V DD 25V, V GEN=10V, I D=3A R GS=50

(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator

THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance:Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W

Max Power Dissipation - (Watts)

1.0

Thermal Resistance (C/W)

150 t1

D.C.

D=t1/tP

0.75

100

tP
D=0.6

Am tt en bi

0.50

em pe tu ra

50
D=0.2 D=0.1

0.25

re

-40 -20

20 40

60 80 100 120 140 160 180 200

0 0.0001

D=0.05 Single Pulse

0.001

0.01

0.1

10

100

T -Temperature (C)

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

3-394

ZVN4310A
TYPICAL CHARACTERISTICS
RDS(on)-Drain Source On Resistance ()
VGS= 20V 10V 12V 9V 8V VGS=3V 10 4V 5V 6V 8V10V 7V

ID - Drain Current (Amps)

10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4

6V

1.0

5V

4V 3V 5 6 7 8 9 10

0.1 0.1

10

100

VDS - Drain Source Voltage (Volts)

ID-Drain Current (Amps)

Saturation Characteristics

On-resistance v drain current

2.6

Normalised RDS(on) and VGS(th)

2.4

gfs-Transconductance (S)

2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0

sis Re ce r u So nai VGS=VDS Dr Gate ID=1mA Thres hold V oltage V

e nc ta

n) (o DS

VGS=10V ID=3.3A

4 3 2 1 0 0 2 4 6 8 10

VDS=10V

GS(TH )

25 50 75 100 125 150 175 200 225

12

14

16

18

20

Tj-Junction Temperature (C)

ID(on)- Drain Current (Amps)

Normalised RDS(on) and VGS(th) v Temperature

Transconductance v drain current

16

VGS-Gate Source Voltage (Volts)

500

14 12 10 8 6 4 2 0 0 1

ID=3A

C-Capacitance (pF)

400 300 200 100 0 Coss Crss 50 Ciss

VDD= 10V 20V 50V 100V

10

20

30

40

10 11 12

VDS-Drain Source Voltage (Volts)

Q-Charge (nC)

Capacitance v drain-source voltage

Gate charge v gate-source voltage

3-395