DATA SHEET
Philips Semiconductors
Product specication
BLW60C
QUICK REFERENCE DATA R.F. performance up to Th = 25 C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) VCC V 12,5 f MHz 175 PL W 45 GL dB > 5,0 % > 75 typ. 35 zi 1,2 + j1,4 ZL 2,6 j1,2 d3 dB typ. 33
12,5 1,6-28
PIN CONFIGURATION
handbook, halfpage
1 2 3
2
MSB056
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
March 1993
Philips Semiconductors
Product specication
BLW60C
MGP479
handbook, halfpage
150
MGP480
IC (A)
10 Th = 70 C Tmb = 25 C 50
0.38 W/K
0 0 50 Th (C) 100
I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch
THERMAL RESISTANCE (dissipation = 40 W; Tmb = 88 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 2,8 K/W 2,05 K/W 0,45 K/W
March 1993
Philips Semiconductors
Product specication
BLW60C
36 V 16 V 4 V
25 mA
E E
> >
8 ms 8 ms
IC = 4 A; VCE = 5 V D.C. current gain ratio of matched devices IC = 4 A; VCE = 5 V Collector-emitter saturation voltage (1) IC = 12,5 A; IB = 2,5 A Transition frequency at f = 100 MHz IC = 4 A; VCE = 12,5 V IC = 12,5 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 15 V Feedback capacitance at f = 1 MHz IC = 200 mA; VCE = 15 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02.
(1) (1)
hFE
typ 10 to <
50 80
hFE1/hFE2
1,2
VCEsat
typ
1,5 V
fT fT
typ typ
Cc
typ <
120 pF 160 pF
Cre Ccs
typ typ
80 pF 2 pF
March 1993
Philips Semiconductors
Product specication
BLW60C
MGP481
MGP482
handbook, halfpage
75
handbook, halfpage
300
hFE 5V
IE = Ie = 0 f = 1 MHz
50
25
100
0 0 5 10 IC (A) 15
0 0 10 VCB (V) 20
Fig.4
Fig.5
750
MGP483
fT (MHz)
VCE = 12.5 V 10 V
500 5V
250
0 0 5 10 15 IC (A) 20
March 1993
Philips Semiconductors
Product specication
BLW60C
ZL () 2,6 j1,2
R1
L3
L8 +VCC
MGP484
List of components: C1 = 2,5 to 20 pF lm dielectric trimmer (cat. no. 2222 809 07004) C2 = C8 = 4 to 40 pF lm dielectric trimmer (cat. no. 2222 809 07008) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor C5 = 100 nF polyester capacitor C6a = C6b = 8,2 pF ceramic capacitor (500 V) C7 = 5 to 60 pF lm dielectric trimmer (cat. no. 2222 809 07011) L1 = 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 5 mm L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 5 mm L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 5 mm L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy bre-glass dielectric, thickness 1/16". R1 = 10 (10%) carbon resistor R2 = 4,7 (5%) carbon resistor Component layout and printed-circuit board for 175 MHz test circuit: Fig.8.
March 1993
Philips Semiconductors
Product specication
BLW60C
150
handbook, full pagewidth
72
1888MJK
L3 C4 R1 L2 C1 C2 L1 C3a L4 L5 L6
L8 +VCC C5 R2
C6a C7 C8 L7 C6b
C3b
1888MJK
rivet
MGP485
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
Fig.8 Component layout and printed-circuit board for 175 MHz class-B test circuit.
March 1993
Philips Semiconductors
Product specication
BLW60C
MGP486
MGP487
100
PL (W) 75
f = 175 MHz
handbook, halfpage
10
100
Th = 25 C
Gp (dB) Gp
(%)
50 Th = 70 C
50
25
0 0 10 20 PS (W) 30
0 10 30 PL (W) 50
Fig.9
Fig.10
Conditions for R.F. SOAR f = 175 MHz Th = 70 C Rth mb-h = 0,45 K/W VCCnom = 12,5 V or 13,5 V PS = PSnom at VCCnom and VSWR = 1 measured in circuit of Fig.7. The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio.
MGP488
handbook, halfpage
50
VSWR = 5
30
Fig.11
March 1993
Philips Semiconductors
Product specication
BLW60C
MGP489
MGP490
handbook, halfpage
ri
handbook, halfpage
ri, xi () xi 0
RL, XL () RL
0 XL
100
f (MHz)
200
100
f (MHz)
200
MGP491
handbook, halfpage
20
Gp (dB)
10
Fig.14
March 1993
Philips Semiconductors
Product specication
BLW60C
Gp dB typ 19,5
dt % typ 35
d3 dB (1) typ 33
d5 dB (1) typ 36
IC(ZS) mA 25
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
RS = 50
C7
March 1993
10
Philips Semiconductors
Product specication
BLW60C
Measuring conditions for Figs 18 and 19: VCC = 13,5 V f1 = 28,000 MHz f2 = 28,001 MHz Th = 25 C Rth mb-h 0,45 K/W IC(ZS) = 25 mA typical values
March 1993
11
Philips Semiconductors
Product specication
BLW60C
20
MGP493
MGP494
40
60
Fig.16
Fig.17
20
MGP495
MGP496
40
output power
typ
60
Fig.18
Fig.19
* Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
March 1993
12
Philips Semiconductors
Product specication
BLW60C
handbook, halfpage
30
MGP497
handbook, halfpage
10
MGP498
Gp (dB)
() 7.5
ri
5 xi () 2.5
20
5 xi 2.5 ri
2.5
10 1 10 f (MHz)
102
0 1 10 f (MHz)
5 102
Fig.20
Fig.21
S.S.B. class-AB operation Conditions for Figs 20 and 21: VCC = 12,5 V PL = 30 W (P.E.P.) Th = 25 C Rth mb-h 0,45 K/W IC(ZS) = 25 mA ZL = 1,9 VCC = 13,5 V PL = 35 W (P.E.P.) Th = 25 C Rth mb-h 0,45 K/W IC(ZS) = 25 mA ZL = 1,9
March 1993
13
Philips Semiconductors
Product specication
BLW60C
SOT120A
A Q c
N1 N
D1 D2
A w1 M A M W
N3 X H b detail X M1
4 L
3 H 1
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.90 5.48 c 0.18 0.14 D 9.73 9.47 D1 8.39 8.12 D2 9.66 9.39 H 27.44 25.78 L 9.00 8.00 M 3.41 2.92 M1 1.66 1.39 N 12.83 11.17 N1 1.60 0.00 N3 3.31 2.54 0.130 0.100 Q 4.35 3.98 0.171 0.157 W w1 0.38 8-32 UNC 0.015
EUROPEAN PROJECTION
March 1993
14
Philips Semiconductors
Product specication
BLW60C
This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1993
15