FLM0910-4F

X, Ku-Band Internally Matched FET

FEATURES

High Output Power: P1dB = 36.0dBm (Typ.)

High Gain: G1dB = 7.5dB (Typ.)
High PAE: add = 29% (Typ.)
Low IM3 = -46dBc@Po = 25.5dBm
Broad Band: 9.5 ~ 10.5GHz
Impedance Matched Zin/Zout = 50

DESCRIPTION
The FLM0910-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudynas stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item

Condition

Symbol

Rating

Unit

Drain-Source Voltage

VDS

15

Gate-Source Voltage

VGS

-5

25.0

Total Power Dissipation

Tc = 25C

PT

Storage Temperature

Tstg

-65 to +175

Channel Temperature

Tch

175

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)

Item
Saturated Drain Current
Transconductance
Pinch-off Voltage

Symbol

Test Conditions

IDSS
gm

VDS = 5V, VGS = 0V

VDS = 5V, IDS = 1100mA

Vp

Gate Source Breakdown Voltage

VGSO

Output Power at 1dB G.C.P.

P1dB

Power Gain at 1dB G.C.P.

G1dB

Drain Current

Idsr
add

Power-added Efficiency
Gain Flatness

Min.
-

Limit
Typ. Max.
1700 2600
1700

Unit
mA

VDS = 5V, IDS = 85mA

-0.5

-1.5

-3.0

mS
V

IGS = -85A

-5.0

35.5

36.0

dBm

6.5

7.5

dB

VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 9.5 ~10.5 GHz,
ZS=ZL= 50 ohm

1100 1300

mA

29

0.6

dB

-44

-46

dBc

3rd Order Intermodulation

Distortion

IM3

f = 10.5 GHz, f = 10 MHz

2-Tone Test
Pout = 25.5dBm S.C.L.

Thermal Resistance

Rth

Channel to Case

5.0

6.0

C/W

10V x Idsr x Rth

80

Channel Temperature Rise

Tch

CASE STYLE: IA

Edition 1.3
August 2004

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

FLM0910-4F
X, Ku-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f = 10.5 GHz
32 f1 = 10.51 GHz
2
2-tone test

Output Power (S.C.L.) (dBm)

Total Power Dissipation (W)

30

24

18

12

50

100

150

30
Pout

28

-15

26

-25
-35

24
IM3

22

-45

20

-55

IM3 (dBc)

POWER DERATING CURVE

200
16

Case Temperature (C)

18

20

22

24

Input Power (S.C.L.) (dBm)

S.C.L.: Single Carrier Level

VDS=10V
P1dB

36

Pin=29dBm

36
27dBm

35
26dBm

34
25dBm

33
32

Output Power (dBm)

Output Power (dBm)

37

OUTPUT POWER vs. INPUT POWER

VDS=10V
f = 10.0 GHz

34
Pout

40

32
30

30
add

28

20

26

10

23dBm

31

9.5

10.0

10.5

19

Frequency (GHz)

21

23

25

27

Input Power (dBm)

29

add (%)

OUTPUT POWER vs. FREQUENCY

FLM0910-4F
X, Ku-Band Internally Matched FET
S11
S22
+j100
+j25

10.3

0.1

+j250

10.5

10.1

+j10

10.7
9.9

9.3GHz

50

10

100

180

250

10.3

9.7

9.5

9.5

9.9

9.7

10.1

9.9

10.7
10.5

-j250

9.9

9.3GHz

9.3GHz
9.7

SCALE FOR |S21|

10.1

-j10

9.5

10.7

10.5

S21
S12

+90
0.2

SCALE FOR |S12|

+j50

10.3
10.1

10.7

9.7
10.5

9.3GHz

10.3

9.5

-j25

-j100
-j50

FREQUENCY
(MHZ)
9300
9400
9500
9600
9700
9800
9900
10000
10100
10200
10300
10400
10500
10600
10700

S11
MAG

ANG

.585
.559
.530
.467
.435
.410
.385
.378
.381
.402
.427
.456
.499
.532
.553

-106.3
-115.3
-125.8
-150.3
-165.5
177.6
159.3
140.6
121.2
102.4
85.0
69.1
46.8
31.7
21.2

-90

S-PARAMETERS
VDS = 10V, IDS = 1100mA
S21
S12
MAG
ANG
MAG
ANG

MAG

ANG

2.447
2.515
2.585
2.763
2.841
2.906
2.934
2.946
2.956
2.964
2.943
2.898
2.742
2.590
2.448

.686
.677
.666
.625
.596
.557
.515
.463
.409
.356
.313
.277
.246
.243
.251

-65.4
-70.8
-76.4
-89.7
-97.3
-106.1
-115.8
-126.6
-139.1
-153.1
-169.5
171.6
138.5
111.8
91.3

48.4
40.1
31.9
13.9
4.0
-6.5
-17.0
-27.6
-38.1
-48.9
-59.8
-71.0
-89.2
-103.3
-114.0

.053
.053
.051
.049
.049
.046
.049
.051
.052
.053
.057
.059
.064
.065
.067

113.7
103.2
90.5
62.4
47.4
28.0
13.1
-7.5
-27.6
-45.8
-61.5
-79.3
-104.5
-124.2
-137.7

S22

FLM0910-4F
X, Ku-Band Internally Matched FET

1.5 Min.
(0.059)

Case Style "IA"

Metal-Ceramic Hermetic Package

1
0.1
(0.004)

9.70.15
(0.382)

2-R 1.250.15
(0.049)

4
2
3
1.80.15
(0.071)

1.5 Min.
(0.059)

0.5
(0.020)

3.2 Max.
(0.126)

13.00.15
(0.512)

1.15
(0.045)

0.2 Max.
(0.008)

8.1
(0.319)

1.
2.
3.
4.

Gate
Source (Flange)
Drain
Source (Flange)

Unit: mm(inches)

16.50.15
(0.650)

For further information please contact:

Eudyna Devices USA Inc.

2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111

CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:

www.us.eudyna.com

Do not put this product into the mouth.

Eudyna Devices Europe Ltd.

Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.

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Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888

Eudyna Devices Asia Pte Ltd.

Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921

Observe government laws and company regulations when discarding this

product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.

Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.

2004 Eudyna Devices USA Inc.

Printed in U.S.A.

Eudyna Devices Inc.

Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170