BUS98

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SEMICONDUCTOR TECHNICAL DATA

30 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
(BVCEO)
250 WATTS
850 1000 V (BVCES)
The BUS98 and BUS98A transistors are designed for highvoltage, highspeed,
power switching in inductive circuits where fall time is critical. They are particularly
suited for lineoperated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast TurnOff Times

60 ns Inductive Fall Time 25_C (Typ)
120 ns Inductive Crossover Time 25_C (Typ)
Operating Temperature Range 65 to + 200_C
100_C Performance Specified for:
ReverseBiased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents (125_C)
CASE 107
TO204AA
x
MAXIMUM RATINGS
Symbol
BUS98
BUS98A
Unit
CollectorEmitter Voltage
Rating
VCEO(sus)
400
450
Vdc
CollectorEmitter Voltage
VCEV
850
1000
Vdc
Emitter Base Voltage
VEB
Vdc
Collector Current Continuous

Peak (1)
Overload
IC
ICM
IoI
30
60
120
Adc
Base Current Continuous

Peak (1)
IB
IBM
10
30
Adc
Total Power Dissipation TC = 25_C

TC = 100_C
Derate above 25_C
PD
250
142
1.42
Watts
TJ, Tstg
65 to + 200
_C
Symbol
Max
Unit
RJC
0.7
_C/W
TL
275
_C
Operating and Storage Junction

Temperature Range
W/_C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Case
Maximum Lead Temperature

for Soldering Purposes:
1/8 from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designers and SWITCHMODE are trademarks of Motorola, Inc.

Designers Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves representing boundaries on device characteristics are given to facilitate worst case design.
REV 7
Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
400
450
0.4
4.0
1.0
6.0
Unit
OFF CHARACTERISTICS (1)
CollectorEmitter Sustaining Voltage (Table 1)

(IC = 200 mA, IB = 0) L = 25 mH
VCEO(sus)
BUS98
BUS98A
Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 125_C)
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 10 )
Vdc
ICEV
TC = 25 _C
TC = 125 _C
mAdc
ICER
mAdc
Emitter Cutoff Current

(VEB = 7 Vdc, IC = 0)
IEBO
0.2
mAdc
EmitterBase Breakdown Voltage

(IE = 100 mA IC = 0)
VEBO
7.0
Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 12
RBSOA
See Figure 13
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 20 Adc, VCE = 5 Vdc)
(IC = 16 Adc, VCE = 5 V)
hFE
1.5
3.5
2.0
1.5
5.0
2.0
1.6
1.6
1.6
1.6
Cob
700
pF
td
0.1
0.2
BUS98
BUS98A
CollectorEmitter Saturation Voltage

(IC = 20 Adc, IB = 4 Adc)
(IC = 20 Adc, IB = 4 Adc, TC = 100_C)
(IC = 16 Adc, IB = 3.2 Adc)
(IC = 16 Adc, IB = 3.2 Adc, TC = 100_C)
VCE(sat)
BUS98
BUS98A
BaseEmitter Saturation Voltage

(IC = 20 Adc, IB = 4 Adc, TC = 100_C)
(IC = 16 Adc, IB = 3.2 Adc)
(IC = 16 Adc, IB = 3.2 Adc, TC = 100_C)
Vdc
VBE(sat)
BUS98
BUS98A
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS
Restive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 250 Vdc, IC = 20 A,

IB1 = 4.0 A, tp = 30 s,
Duty Cycle
2%, VBE(off) = 5 V)
(for BUS98A: IC = 16 A, Ib1 = 3.2 A)
tr
0.4
0.7
ts
1.55
2.3
tf
0.2
0.4
tsv
1.55
tfi
0.06
tsv
1.8
2.8
tc
0.3
0.6
tfi
0.17
0.35
Inductive Load, Clamped (Table 1)

Storage Time
Fall Time
Storage Time
Crossover Time
Fall Time
IC(pk) = 20 A
Ib1 = 4 A
VBE(off) = 5 V,
VCE(c1) = 250 V)
IC(pk) = 16 A
lB1 = 3.2 A)
(1) Pulse Test: PW = 300 s, Duty Cycle
(BUS98)
(BUS98A)
(TC = 25_C)
(TC = 100_C)
2%.

90%
50
hFE, DC CURRENT GAIN
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
DC CHARACTERISTICS
30
10%
20
10
5
3
2
VCE = 5 V
3
5
7
10
20
IC, COLLECTOR CURRENT (AMPS)
30
10
5
IC = 15 A
IC = 20 A
IC = 10 A
1
0.5
0.3
TC = 25C
0.1
0.1
50
f = 5
90%
10%
1
0.7
0.3
0.1
10
Figure 2. Collector Saturation Region
VBE, BASE EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
0.3
0.5
1
IB, BASE CURRENT (AMPS)
f = 5
2
TJ = 25C
1
0.7
TJ = 100C
0.5
0.3
0.3
0.1
20
Figure 3. CollectorEmitter Saturation Voltage
Figure 4. BaseEmitter Voltage
104
10
10k
Cib
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT ( A)
VCE = 250 V
103
TJ = 150C
102
125C
101
100C
75C
REVERSE
100
1k
100
Cob
FORWARD
25C
10 1
0.4
TJ = 25C
10
0.2
0.2
0.4
0.6
10
100
VBE, BASEEMITTER VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
1000

Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
VC1
CIRCUIT
VALUES
TEST CIRCUITS
1
2
IB1
MJE210
0
10 V
2
1 F
Lcoil = 180 H
Rcoil = 0.05
VCC = 20 V
TURNOFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
VCC = 250 V
Vclamp = 250 V
OUTPUT WAVEFORMS
1N4937
OR
EQUIVALENT
INPUT
SEE ABOVE FOR
DETAILED CONDITIONS
t1
Lcoil
Vclamp
tf Clamped
t
IC(pk)
Rcoil
tf
Pulse Width = 10 s
t1 Adjusted to
Obtain IC
IC
TUT
1
t1
t2
VCE
VCC
VCE or
Vclamp
TIME
t2
(IC(pk))
[ LcoilVCC
(IC(pk))
[ LcoilVclamp
RESISTIVE TEST CIRCUIT
TUT
1
RL
VCC
Test Equipment
Scope Tektronix
475 or Equivalent
20
IC pk
VCE(pk)
90% VCE(pk)
tsv
90% IC(pk)
trv
tfi
tti
tc
VCE
50 F
ADJUST VC2
TO OBTAIN
DESIRED IB2
Lcoil = 25 mH, VCC = 10 V

Rcoil = 0.7
IC
IB1 adjusted to
obtain the forced
hFE desired
BUV20
INDUCTIVE TEST CIRCUIT
10% VCE(pk)
90% IB1
10%
IC pk
2% IC
TIME
Figure 7. Inductive Switching Measurements
50 F
+10 V
PW Varied to Attain
IC = 100 mA
IB
0.1 F
BUV20
1
20
I B2(pk), BASE CURRENT (AMPS)
INPUT
CONDITIONS
+10 V
TURNON TIME
ADJUST VC1
TO OBTAIN
DESIRED IB1
MJE200
f = 5
IC = 20 A
16
12
1
2
3
4
5
VBE(off), BASEEMITTER VOLTAGE (VOLTS)
Figure 8. PeakReverse Current

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 90% Vclamp
tfi = Current Fall Time, 90 10% IC
tti = Current Tail, 10 2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is
shown in Figure 7 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN222:
PSWT = 1/2 VCCIC(tc) f
In general, trv + tfi

tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make
this a SWITCHMODE transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
4
3
0.8
0.6
0.4
TC = 100C
1
0.7
t, TIME ( s)
t, TIME ( s)
INDUCTIVE SWITCHING
TC = 25C
0.5
TC = 100C
TC = 100C
0.2
TC = 25C
0.1
TC = 25C
tc
tfi
f = 5
f = 5
4
6 8 10
20
30
Figure 9. Storage Time, tsv
3
2
tsv
tsv
tc
0.2
tfi
0.1
0.05
0.03
TC = 25C
IC = 20 A
f = 5
1
t, TIME ( s)
t, TIME ( s)
3
2
0.5
0.3
30
Figure 10. Crossover and Fall Times
TC = 25C
IC = 20 A
VBE(off) = 5 V
4
6 8 10
20
0.5
0.3
0.2
tc
0.1
tfi
0.05
2
10
0.03
f, FORCED GAIN
Ib2/Ib1
Figure 11a. TurnOff Times versus Forced Gain
Figure 11b. TurnOff TM Times versus Ib2/Ib1

The Safe Operating Area figures shown in Figures 12 and 13 are

specified for these devices under the test conditions shown.
SAFE OPERATING AREA INFORMATION

FORWARD BIAS
30
20
10
DC
1 ms
5
LIMIT
ONLY FOR
TURN ON
2
1
0.5
0.2
TC = 25C
0.1
tr = 0.7 s
BUS98
BUS98A
0.05
0.02
2
There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 12 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the
voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 14.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by second breakdown.
100 200
500 1000
5
10
20
50
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 12. Forward Bias Safe Operating Area
REVERSE BIAS
100
For inductive loads, high voltage and high current must be

sustained simultaneously during turnoff, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent conditions during reverse biased turnoff. This rating is verified under clamped
conditions so that the device is never subjected to an avalanche mode. Figure 13 gives RBSOA characteristics.
80
60
BUS98
BUS98A
40
VBE(off) = 5 V
TC = 100C
IC/IB1 5
20
200
400
600
800
1000
Figure 13. Reverse Bias Safe Operating Area
POWER DERATING FACTOR (%)
100
SECOND BREAKDOWN
DERATING
80
60
THERMAL
DERATING
40
20
40
80
120
160
200
TC, CASE TEMPERATURE (C)
Figure 14. Power Derating

1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.5
0.2
0.1
D = 0.5
0.2
0.1
P(pk)
RJC(t) = r(t) RJC

RJC = 0.7C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)
0.05
SINGLE PULSE
0.01
0.1
1.0
10
t1
t2
DUTY CYCLE, D = t1/t2
100
1000
10000
t, TIME (ms)
Figure 15. Thermal Response
OVERLOAD CHARACTERISTICS
200
OLSOA
TC = 25C
160
120
tp = 10 s
80
BUS98A
BUS98
40
400 450
100
200
300
500
Figure 16. Rated Overload Safe Operating Area

(OLSOA)
OLSOA applies when maximum collector current is limited

and known. A good example Is a circuit where an inductor is
inserted between the transistor and the bus, which limits the
rate of rise of collector current to a known value. If the transistor is then turned off within a specified amount of time, the
magnitude of collector current is also known.
Maximum allowable collectoremitter voltage versus collector current is plotted for several pulse widths. (Pulse width
is defined as the time lag between the fault condition and the
removal of base drive.) Storage time of the transistor has
been factored into the curve. Therefore, with bus voltage and
maximum collector current known, Figure 16 defines the
maximum time which can be allowed for fault detection and
shutdown of base drive.
OLSOA is measured in a commonbase circuit (Figure 18)
which allows precise definition of collectoremitter voltage
and collector current. This is the same circuit that is used to
measure forwardbias safe operating area.
10
IC, (AMP)
RBE = 50
500 F
500 V
RBE = 5
RBE = 1.1
2
Notes:
VCE = VCC + VBE
Adjust pulsed current source
for desired IC, tp
RBE = 0
4
6
dV/dt (KV/s)
Figure 17. IC = f (dV/dt)
VCC
VEE
10
Figure 18. Overload SOA Test Circuit

PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.
C
T
E
D
2 PL
0.13 (0.005)
U
T Q
SEATING
PLANE
T Y
Q
0.13 (0.005)
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 107
TO204AA (TO3)
ISSUE Z
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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*BUS98/D*
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SEMICONDUCTOR TECHNICAL DATA

Fast TurnOff Times

Emitter Base Voltage

Collector Current Continuous

Base Current Continuous

Total Power Dissipation TC = 25_C

Operating and Storage Junction

Maximum Lead Temperature

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

Designers and SWITCHMODE are trademarks of Motorola, Inc.

Motorola, Inc. 1995

OFF CHARACTERISTICS (1)

CollectorEmitter Sustaining Voltage (Table 1)

Collector Cutoff Current

Emitter Cutoff Current

EmitterBase Breakdown Voltage

Second Breakdown Collector Current with Base Forward Biased

CollectorEmitter Saturation Voltage

BaseEmitter Saturation Voltage

(VCC = 250 Vdc, IC = 20 A,

Inductive Load, Clamped (Table 1)

(1) Pulse Test: PW = 300 s, Duty Cycle

Motorola Bipolar Power Transistor Device Data

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 2. Collector Saturation Region

VBE, BASE EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 3. CollectorEmitter Saturation Voltage

Figure 4. BaseEmitter Voltage

IC, COLLECTOR CURRENT ( A)

VBE, BASEEMITTER VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

Motorola Bipolar Power Transistor Device Data

RBSOA AND INDUCTIVE SWITCHING

RESISTIVE TEST CIRCUIT

Lcoil = 25 mH, VCC = 10 V

INDUCTIVE TEST CIRCUIT

Figure 7. Inductive Switching Measurements

I B2(pk), BASE CURRENT (AMPS)

Figure 8. PeakReverse Current

Motorola Bipolar Power Transistor Device Data

shown in Figure 7 to aid in the visual identity of these terms.

In general, trv + tfi

Figure 9. Storage Time, tsv

Figure 10. Crossover and Fall Times

Figure 11a. TurnOff Times versus Forced Gain

Figure 11b. TurnOff TM Times versus Ib2/Ib1

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

The Safe Operating Area figures shown in Figures 12 and 13 are

SAFE OPERATING AREA INFORMATION

There are two limitations on the power handling ability of a

Figure 12. Forward Bias Safe Operating Area

IC, COLLECTOR CURRENT (AMPS)

For inductive loads, high voltage and high current must be

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 13. Reverse Bias Safe Operating Area

POWER DERATING FACTOR (%)