4.

MOS Small Signal Model

Reading: Sedra & Smith Sec. 5.5
(S&S 5
th
Ed: Sec. 4.6)

ECE 102, Fall 2011, F. Najmabadi
Circuit response to signal is different
Recall:
o Response of the circuit to small signal is different than
response of the circuit to Bias + signal.
o iv characteristics of the circuit elements in response to the
signal is different than iv characteristics of the circuit
elements in response to the Bias + signal
Circuit looks different when signal is considered!

f()
a A A
x X x + =
a A A
y Y y + =
) (
A A
x f y = Signal + Bias
) (
A A
X f Y = f() A
X
A
Y
Bias (signal = 0)
g()

a
x
a
y
Signal=
(Signal + Bias) (Bias)
) (
a a
x g y =
Signal-only circuit is different!
Signal only
= (Bias + Signal) - Bias
RD: v
rd

i
rd
= i
d
MOS: v
gs
, i
d
, v
ds
No signal here!
R
D
: V
RD

I
RD
= I
D
MOS: V
GS
, I
D
, V
DS
V
DD
: V
DD
Bias
R
D
: v
RD
= V
RD
+ v
rd

i
RD
= i
D
= I
D +
i
d
MOS: v
GS
= V
GS
+ v
gs
v
DS
= V
DS
+ v
ds
i
D
= I
D +
i
d
V
DD
: V
DD
Bias & Signal
Signal Model for linear circuit elements
Independent voltage source (e.g., V
DD
)
o No signal: effectively grounded
Independent current source
o No signal: effectively open circuit (Careful about current mirrors as they
are NOT ideal current sources, channel width modulation was ignored!)
Resistors, capacitors, inductors
o Remain the same:

Dependent sources
o Remain the same with the control parameter related to the signal!
Non-linear Elements:
o Different!


i
R
= I
R +
i
r
v
R
= V
R
+ v
r
= RI
R
+ v
r
v
R
= R i
R
= R (I
R +
i
r
) = RI
R
+ R i
r
v
r
= R i
r





(

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.
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\
|
=
(

|
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.
|

\
|

|
|
.
|

\
|
=
|
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.
|

\
|

|
|
.
|

\
| +
= =
1 exp 1 exp exp
exp exp : Signal
T
d
D
T
d
T
D
s d
T
D
s
T
d D
s D D d
nV
v
I
nV
v
nV
V
I i
nV
V
I
nV
v V
I I i i
Diodes: signal response is non-linear but can be
linearized when signal is small
V
D
I
D
v
d
i
d
?
v
d
i
d
R = nV
T
/I
D
|
|
.
|

\
|
= +
T
D
s D
nV
v
I i exp : Signal Bias
|
|
.
|

\
|
=
T
D
s D
nV
V
I I exp : Bias
v
D
i
D
D
T
D
T
d
D d
T
d
T
d
T
d
T
d
T
d
T
d
v
nV
I
nV
v
I i
nV
v
nV
v
nV
v
nV
v
nV
v
nV
v
|
|
.
|

\
|
=
(

|
|
.
|

\
|
+
|
|
.
|

\
|
+
|
|
.
|

\
|
<<
+
|
|
.
|

\
|
+
|
|
.
|

\
|
+ =
|
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.
|

\
|
1 1
1 exp : 1 If
....
! 2
1
1 exp : Exapnsion Series Taylor
2
Formal derivation of small signal model
( ) ( ) ...
! 2
) (
) ( ) (
2
) 2 (
) 1 (
+ + + =
A A
A
A A A A
X x
X f
X x X f X f
...
! 2
) (
) ( ) (
2
) 2 (
) 1 (
+ + + =
a
A
a A A
x
X f
x X f X f
a A A a A A
x X f Y x X f X f + = + ) ( ) ( ) (
) 1 ( ) 1 (
2
) 2 (
) 1 (
! 2
) (
) (
a
A
a A
x
X f
x X f >>
) (
) (
2
) 2 (
) 1 (
A
A
a
X f
X f
x <<
Small signal means:
a A a a
x X f x g y = = ) ( ) (
) 1 (
f()
a A A
x X x + =
a A A
y Y y + =
) (
A A
x f y = Signal + Bias
) (
A A
X f Y = f() A
X
A
Y
Bias (signal = 0)
g()

A
x
A
y
Signal=
(Signal + Bias) (Bias)
) (
a a
x g y =
) (
A A a A
x f y y Y = = +
(Taylor Series
Expansion)
Derivation of diode small signal model
|
|
.
|

\
|
= 1
T
D
nV
v
S D
e I i
|
|
.
|

\
|
= 1 ) (
T
nV
x
S
e I x f
|
|
.
|

\
|
= = 1 ) (
T
D
nV
V
S D D
e I V f I
d
T
S D
d
T
nV
V
S
d
V x
T
nV
x
S
d D d
v
nV
I I
v
nV
e I
v
nV
e I
v V f i
T
D
D
T

+
=
(
(
(

=
(
(
(

= =
=
) (
) 1 (
d
T
D
d
T
S D
d
v
nV
I
v
nV
I I
i
(

+
=
D
d
d
r
v
i =
D
T
D
I
nV
r
v
d
i
d
R = nV
T
/I
D
v
D
i
D
For Small Signals!
MOS iv equations: i
D
= f(v
GS
, v
DS
)
) , (
A A A
y x f z = Signal + Bias
f(, )
a A A
x X x + =
a A A
z Z z + =
a A A
y Y y + =
Bias (signal = 0)
f(, )
A
X
A
Z
A
Y
) , (
A A A
Y X f Z =
Signal=
(Signal + Bias) (Bias)
g(, )
a
x
a
z
a
y
) , (
a a a
y x g z =
) , (
A A A a A
y x f z z Z = = +
... ) (
) , (
) (
) , (
) , (
,
,
+

+ =
A A
Y X
A A
Y X
A A
Y y
y
y x f
X x
x
y x f
Y X f
A A
A A
a
Y X
a
Y X
A
y
y
y x f
x
x
y x f
Z
A A
A A

+
,
,
) , ( ) , (
a
Y X
a
Y X
a
y
y
f
x
x
f
z
A A
A A

,
,
Derivation of MOS small signal model
ds
V V
DS
gs
V V
GS
d
v
v
f
v
v
f
i
DS GS DS GS

=
, ,

y v x v y x f i
v v f v V v
L
W
C i
i
DS GS D
DS GS DS t GS ox n D
G
=
= + =
=
, with ) , (
) , ( ) 1 ( ) ( 5 . 0
0
2

m
OV
D
t GS
DS t GS ox n
V V
DS t GS ox n
V V
GS
g
V
I
V V
V V V
L
W
C
v V v
L
W
C
v
f
DS GS
DS GS
=

+
=
+ =

2
) (
) 1 ( ) ( 5 . 0
2
) 1 )( ( 5 . 0 2
2
,
,


o DS
D
DS
DS t GS ox n
V V
t GS ox n
V V
DS
r V
I
V
V V V
L
W
C
V v
L
W
C
v
f
DS GS
DS GS
1
) 1 ( ) 1 (
) 1 ( ) ( 5 . 0

) ( 5 . 0
2
,
2
,

+
=
+
+
=
=

1
*
2

0

D
o
OV
D
m
g
o
ds
gs m d
I
r
V
I
g
i
r
v
v g i

=
=
=
+ =

(* For v
DS
<< 1)
) 1 ( ) ( 5 . 0
0
2
DS t GS ox n D
G
V V V
L
W
C I
I
+ =
=
MOS small signal circuit model
and 0
o
ds
gs m d g
r
v
v g i i + = =
D
o
I
r

1
OV
D
m
V
I
g

=
2
1
2 2
>> = =
OV
A
OV
o m
V
V
V
r g

i
d
Statement of KCL
Two elements in parallel
Input open circuit
PMOS circuit small signal model is identical to NMOS
D
o
I
r

1
OV
D
m
V
I
g

=
2
i
d
v
sg
g
m
v
sg
i
d
=
PMOS small-signal circuit model is identical to NMOS
o For PMOS small signal model, i
d
flows into the drain (while i
D
and I
D

flows out of the drain).
o For both NMOS and PMOS, while i
D
0 and I
D
0, signal quantities: i
d
,
v
gs
, and v
ds
, can be negative!

and 0
o
sd
sg m d g
r
v
v g i i + = =
Body Effect
It has been found that with a few unusual exceptions, body effects can be
ignored in the initial design of MOS amplifiers (and we ignore it here).
When body effect included:



We can use Taylor Series Expansion in three variables to get MOS small-
signal model:




( )
) , , ( ) 1 ( ) ( 5 . 0
| 2 | | 2 |
2
0 ,
SB DS GS DS t GS ox n D
F SB F t t
v v v f v V v
L
W
C i
v V V
= + =
+ + =


o Additional element.
o Note body is connected to
ground for small signal
(because it is connected to
the negative terminal of the
power supply).
Example 1: Draw the small-signal equivalent of the circuit below
(assume capacitors are short for small signal).

IVS 0
R remains
Ground at the bottom
Example 2: Draw the small-signal equivalent of the circuit below
(assume capacitors are short for small signal).

Flip PMOS
IVS 0
Ground at the bottom
(100k || 33k = 24.8 k)
Example 3: Draw the small-signal equivalent of the circuit below
(assume capacitors are short for small signal).

ICS 0
(This makes ICS
an open circuit)
IVS 0