APM4500AK

Dual Enhancement Mode MOSFET (N- and P-Channel)

Features

N-Channel 20V/8A, RDS(ON) =22m (typ.) @ VGS = 4.5V RDS(ON) =30m (typ.) @ VGS = 2.5V

Pin Description
D1 D1 D2 D2 S1 G1 S2 G2

P-Channel -20V/-4.3A, RDS(ON) =80m(typ.) @ VGS =-4.5V RDS(ON) =105m(typ.) @ VGS =-2.5V

Top View of SOP 8

(8) D1 (7) D1

(6) D2

(5) D2

Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
(2) G1

(4) G2

Applications

Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
S1 (1)

S2 (3)

N-Channel

P-Channel

Ordering and Marking Information

APM4500A Assembly Material Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Assembly Material L : Lead Free Device G : Halogen and Lead Free Device XXXXX - Date Code

APM4500A K :

APM4500A XXXXX

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 1 www.anpec.com.tw

APM4500AK
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA*
Note: *Surface Mounted on 1in pad area, t 10sec.
2

(TA = 25C unless otherwise noted)

N Channel 20 12 VGS=10V(N) VGS=-10V(P) 8 30 2.5 150 -55 to 150 TA=25C TA=100C 2 0.8 62.5 W C/W P Channel -20 12 -4.3 -16 -2 A C V A Unit

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation

Thermal Resistance-Junction to Ambient

Electrical Characteristics
Symbol Parameter

(TA = 25C unless otherwise noted)

Test Conditions

APM4500AK Min. Typ. Max.

Unit

Static Characteristics BVDSS IDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current VGS=0V, IDS=250A VGS=0V, IDS=-250A VDS=16V, VGS=0V TJ=85C VDS=-16V, VGS=0V TJ=85C VDS=VGS, IDS=250A VDS=VGS, IDS=-250A VGS=10V, VDS=0V VGS=4.5V, IDS=8A RDS(ON) a Drain-Source On-State Resistance VGS=-4.5V, IDS=-4.3A VGS=2.5V, IDS=5.2A VGS=-2.5V, IDS=-2A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 0.5 -0.5 0.7 -0.75 22 80 30 105 1 30 -1 -30 1 -1 10 10 26 90 36 115 m V A V

VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current

Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008

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APM4500AK
Electrical Characteristics (Cont.)
Symbol Parameter
(TA = 25C unless otherwise noted)

Test Conditions

APM4500AK Min. Typ. Max.

Unit

Diode Characteristics VSDa trr qrr Diode Forward Voltage Reverse Recovery Time ISD=2.5A, VGS=0V ISD=-2A, VGS=0V N-Channel ISD=-8A, dlSD/dt =100A/s N-Ch P-Ch N-Ch P-Ch 0.8 -0.7 15 22 7 6 4 9 740 565 160 125 125 95 5 6 11 13 40 34 23 32 10 6 1 1 4 2.2 1.3 -1.3 10 12 21 24 73 62 42 59 13 8 nC ns pF V ns nC

N-Ch Reverse Recovery Charge P-Channel ISD =-4.3A, dlSD/dt =100A/s P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

Dynamic Characteristics b RG Ciss Coss Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
b

VGS=0V,VDS=0V,F=1MHz N-Channel VGS=0V, VDS=10V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-10V, Frequency=1.0MHz N-Channel VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6 P-Channel VDD=-10V, RL=10, IDS=-1A, VGEN=-4.5V, RG=6

Crss

td(ON) tr td(OFF) tf

Gate Charge Characteristics Qg Qgs Qgd Total Gate Charge

N-Channel VDS=10V, VGS=4.5V, IDS=8A P-Channel VDS=-10V, VGS=-4.5V, IDS=-4.3A

Gate-Source Charge Gate-Drain Charge

Notes: a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing.

Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008

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APM4500AK
Typical Characteristics
N-Channel Power Dissipation
2.5

Drain Current
10

2.0

1.5

ID - Drain Current (A)

o

Ptot - Power (W)

1.0

0.5 TA=25 C 0.0 0 20 40 60 80 100 120 140 160

2 TA=25 C,VG=4.5V 0 0 20 40 60 80 100 120 140 160

o

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area Normalized Transient Thermal Resistance

100
2 1

Thermal Transient Impedance

Duty = 0.5 0.2 0.1

300s

ID - Drain Current (A)

10

Lim it

Rd s(o n)

1ms 10ms

0.1

0.05 0.02 0.01

100ms 1s

0.01

0.1

Single Pulse

DC

0.01 0.01

TA=25 C

0.1

10

100

1E-3 1E-4

Mounted on 1in pad o RJA : 62.5 C/W

1E-3

0.01

0.1

10 30

VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008

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APM4500AK
Typical Characteristics (Cont.)
N-Channel Output Characteristics
20 18 16 VGS= 3, 4, 5, 6, 7, 8, 9, 10V 2.5V

Drain-Source On Resistance
60

RDS(ON) - On - Resistance (m)

50 VGS=2.5V

ID - Drain Current (A)

14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 1.5V 2.0 2.5 3.0 2V

40

30 VGS=4.5V 20

10

12

16

20

VDS - Drain-Source Voltage (V)

ID - Drain Current (A)

Drain-Source On Resistance
40 ID=8A
1.6 1.4

Gate Threshold Voltage

IDS=250A

RDS(ON) - On - Resistance (m)

Normalized Threshold Voltage

35

1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25

30

25

20

15

10

10

25

50

75 100 125 150

VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008

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APM4500AK
Typical Characteristics (Cont.)
N-Channel Drain-Source On Resistance
2.00 VGS = 4.5V 1.75 IDS = 8A
10 30

Source-Drain Diode Forward

Normalized On Resistance

1.50

IS - Source Current (A)

Tj=150 C

1.25 1.00 0.75 0.50 0.25 RON@Tj=25 C: 22m 0.00 -50 -25 0 25 50 75 100 125 150
o

Tj=25 C

0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (C)

VSD - Source - Drain Voltage (V)

Capacitance
1200 1100 1000 900 Frequency=1MHz
9 10 VDS=10V IDS=8A

Gate Charge

VGS - Gate - source Voltage (V)

8 7 6 5 4 3 2 1 0

C - Capacitance (pF)

800 700 600 500 400 300 200 100 0 0 Crss Coss Ciss

12

16

20

12

16

20

VDS - Drain - Source Voltage (V)

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008

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APM4500AK
Typical Characteristics (Cont.)
P-Channel Power Dissipation
2.5

Drain Current
5

2.0

1.5

-ID - Drain Current (A)

TA=25 C 0 20 40 60 80 100 120 140 160
o

Ptot - Power (W)

1.0

0.5

1
o

0.0

TA=25 C,VG=-4.5V 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area Normalized Transient Thermal Resistance

100

Thermal Transient Impedance

2 1
Duty = 0.5 0.2 0.1

-ID - Drain Current (A)

10
Rd s(o n) Lim it

1ms 10ms 100ms 1s

0.1
0.02 0.01

0.05

0.01

Single Pulse

0.1

DC

0.01 0.01

TA=25 C

0.1

10

100

1E-3 1E-4

Mounted on 1in pad o RJA : 62.5 C/W

1E-3

0.01

0.1

10 30

-VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008

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APM4500AK
Typical Characteristics (Cont.)
P-Channel Output Characteristics
20 18 16 VGS= -4,-5,-6,-7 -8,-9,-10V

Drain-Source On Resistance
200 180

RDS(ON) - On - Resistance (m)

-3V

160 140 120 100 80 60 40 VGS= -4.5V VGS= -2.5V

-ID - Drain Current (A)

14 12 10 8 -2V 6 4 2 0 0.0 0.5 1.0 1.5 2.0 -1.5V

2.5

3.0

20

12

16

20

-VDS - Drain - Source Voltage (V)

-ID - Drain Current (A)

Drain-Source On Resistance
160 ID= -4.3A 140
1.4 1.6

Gate Threshold Voltage

IDS= -250A

RDS(ON) - On - Resistance (m)

Normalized Threshold Voltage

1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25

120 100 80 60 40 20

10

25

50

75 100 125 150

-VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008

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APM4500AK
Typical Characteristics (Cont.)
P-Channel Drain-Source On Resistance
2.0 VGS = -4.5V 1.8 IDS = -4.3A

Source-Drain Diode Forward

20 10

Normalized On Resistance

1.6 1.4 1.2 1.0 0.8 0.6 0.4 RON@Tj=25 C: 80m 0.2 -50 -25 0 25 50 75 100 125 150
o

-IS - Source Current (A)

Tj=150 C

Tj=25 C

0.1 0.0

0.3

0.6

0.9

1.2

1.5

1.8

Tj - Junction Temperature (C)

-VSD - Source - Drain Voltage (V)

Capacitance
800 700
10

Gate Charge
VDS= -10V IDS= -4.3A

Frequency=1MHz
9

-VGS - Gate - source Voltage (V)

8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12

600

C - Capacitance (pF)

Ciss

500 400 300 200 Coss 100 0 Crss

12

16

20

-VDS - Drain - Source Voltage (V)

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008

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APM4500AK
Package Information
SOP-8
D SEE VIEW A

E1

h X 45

A2

0.25 GAUGE PLANE SEATING PLANE L VIEW A SOP-8 INCHES MIN. MAX.

S Y M B O L

MILLIMETERS MIN. MAX.

A A1 A2 b c D E E1 e h L 0
0.25 0.40 0 0.10 1.25 0.31 0.17 4.80 5.80 3.80 1.27 BSC

A1

1.75 0.25 0.004 0.049 0.51 0.25 5.00 6.20 4.00 0.012 0.007 0.189 0.228 0.150 0.050 BSC 0.50 1.27 8 0.010 0.016 0

0.069 0.010

0.020 0.010 0.197 0.244 0.157

0.020 0.050 8

Note: 1. Follow JEDEC MS-012 AA. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side.
Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 10 www.anpec.com.tw

APM4500AK
Carrier Tape & Reel Dimensions
OD0 P0 P2 P1 A E1 F K0 B SECTION A-A T B0 A0 OD1 B A SECTION B-B

Application

A 330.0 2.00

H 50 MIN. P1 8.0 0.10

H A

T1

T1

d 1.5 MIN. D1 1.5 MIN.

E1

12.4+2.00 13.0+0.50 -0.00 -0.20 P2 2.0 0.05 D0 1.5+0.10 -0.00

20.2 MIN. 12.0 0.30 1.75 0.10 5.5 0.05 T A0 B0 K0

SOP- 8

P0 4.0 0.10

0.6+0.00 6.40 0.20 5.20 0.20 2.10 0.20 -0.40

(mm)

Devices Per Unit

Package Type SOP-8 Unit Tape & Reel Quantity 2500

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APM4500AK
Reflow Condition
TP Ramp-up TL Tsmax
(IR/Convection or VPR Reflow)

tp Critical Zone TL to TP

Temperature

tL

Tsmin Ramp-down ts Preheat

25

t 25 C to Peak

Time

Reliability Test Program

Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B, A102 MIL-STD-883D-1011.9 Description 245C, 5 sec 1000 Hrs Bias @125C 168 Hrs, 100%RH, 121C -65C~150C, 200 Cycles

Classification Reflow Profiles

Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds

6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package. Measured on the body surface.
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APM4500AK
Classification Reflow Profiles (Cont.)
Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures 3 Package Thickness Volume mm <350 <2.5 mm 240 +0/-5C 2.5 mm 225 +0/-5C Volume mm 350 225 +0/-5C 225 +0/-5C
3

Table 2. Pb-free Process Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level.

Customer Service
Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838

Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008

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