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AN830 APPLICATION NOTE

L6560/A PFC IN LAMP BALLAST APPLICATIONS


Description The L6560 IC is especially designed to be used in lighting applications. In fact, the IC is very simple to use and its needs, in terms of external components, are minimized. Information about the use of the IC is given in the AN667; this section presents an overview of some circuits for ballast applications using L6560 in several configuration. The first application (see fig 1) is a standard boost topology suitable for high mains input with the target specifications as follows:
Rated Mains Max. Output Power Output Voltage Vin(rms) = 277 Vac (+10% -15%) Po = 140W Vo = 450V

The second one (see fig 2) is still a boost topology with high mains input but it has a lower output power. The target specifications are:
Rated Mains Max. Output Power Output Voltage Vin(rms) = 277 Vac (+10% -15%) Po = 70W Vo = 450V

Figure 1. VMAINS = 277VAC, VO = 450V, PO = 140W


D1 BYT13-600 T VCC C3 0.47F/1F R7 1.1M 1% R9 510K 5% 7 4 R4 330 C4 1nF R6 0.68 500mW R8 6.15K 1%
D95IN260A

+
Vo=450V Po=140W C5 47F/68F 250V

BRIDGE + 4 x BY255 FUSE -

R1 68K 5% C1 0.22F 630V R9 1.8M 5% 8 5

1 R5 10 MOS STP6N60

Vac 277V +10% -15%

L6560
3 6 C2 22F 25V

TRANSFORMER T: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 560H

R10 6.2K 5%

C6 10nF

R10 510K 5%

C6 47F/68F 250V

Figure 2. VMAINS = 277VAC, VO = 450V, PO = 70W


D1 BYT13-600 T VCC C3 0.47F/1F R7 1.1M 1% R9 620K 5% 7 4 R4 330 C4 1nF R6 1.5 250mW R8 6.15K 1%
D95IN261A

+
Vo=450V Po=70W C5 22F/47F 250V

BRIDGE + 4 x BY255 FUSE -

R1 68K 5% C1 0.1F 630V R9 1.8M 5% 8 5

1 R5 10 MOS STP4NA60

Vac 277V +10% -15%

L6560
3 6 C2 22F 25V

TRANSFORMER T: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 710H

R10 6.2K 5%

C6 10nF

R10 620K 5%

C6 22F/47F 250V

November 2003

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AN830 APPLICATION NOTE


Note: The core of the transformer is oversized for the rated power, ETD core is generally an "easy to use" low cost solution. For both the above described circuits, to sustain the high output voltage value, we suggest using two capacitor connected in series, 250V rated voltage each one. The third solution (see fig 3) shows the same PFC configuration for a lower rated input mains, directed to a different market area. It can be noticed the lower rated parameter of some external components like MOS, D1, C1 and C5. The target specifications are:
Rated Mains Max. Output Power Output Voltage Vin(rms) = 120 20% Vac Po = 70W Vo = 450V

Figure 3. VMAINS = 120VAC, VO = 230V, PO = 70W


D1 BYT03-400 T VCC C3 0.47F/1F R7 1.1M 1%

+
Vo=230V Po=70W

BRIDGE + 4 x BY255 FUSE -

R1 68K 5% C1 0.47F 250V R9 1.8M 5% 8 5

1 7 4 R4 330 C4 1nF R6 0.5 250mW R8 12K 1%


D95IN262

Vac 120V 20%

L6560
3 6 C6 10nF C2 22F 25V

R5 10

MOS STP5N30

C5 47F/82F 315V

TRANSFORMER T: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 700H

R10 16K 5%

Here it is shown a different topology (see fig 4), suitable for PFC in lighting, that allows to keep the output voltage at an advantageous value even if the rated input mains value is high. This has been realized using a "Level shift configuration" The target specifications are:
Rated Mains Max. Output Power Output Voltage Vin(rms) = 277 Vac (+10% -15%) Po = 140W Vo = 320V

Figure 4. VMAINS = 277VAC, VO = 320V, PO = 140W, buck-boost topology


C5 82F/100F 385V T VCC C3 330nF MOS STP5N80 R5 10 LM358 D1 BYT13-800 VCC 8 + 4 R3 12K 1% A R2 1.3M 1% Vo=320V Po=140W

+
R7 1.3M 1%

BRIDGE + 4 x BY255 FUSE -

R1 68K 5% C1 0.22F 630V R9 1.8M 5% 8 5

R11 62K 1%

3 2 R8 12K 1%

1 7 4

Vac 277V +10% -15% TRANSFORMER T: core THOMSON-CSF B1ET2910A primary 150T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) primary inductance: 3mH

L6560
3 6 C4 1nF C6 10nF C2 22F 25V

R10 6.2K 5%

R4 330 R6 0.47 1W R12 330K

D95IN263A

Note: This topology involves a peak inductor current higher than in the standard boost topology, so a bigger EMI filter is necessary. An external E/A is used to shift the output feedback. The ground of the PFC section is not the same of the ballast one.

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AN830 APPLICATION NOTE


A flyback topology (see fig 5), allows the same advantages as the previous application with level shift configuration but with a common ground. The target specifications are:
Rated Mains Max. Output Power Output Voltage Vin(rms) = 277 Vac (+10% -15%) Po = 140W Vo = 320V

Note: This last topology involves higher peak current in the transformer in comparison with the standard boost topology, this requiring a bigger EMI filter. The transformer assembly is more complicated than the inductor with the auxiliary winding used for the other applications. Figure 5. Circuit with VMAINS = 277VAC, VO = 320V, PO = 140W, flyback topology
L2 D1 BYT13-800

+
R7 1.3M 1% Vo=320V Po=140W

L1 VCC L3 C3 330nF MOS STP5N80 R5 10

BRIDGE + 4 x BY255 FUSE -

R1 68K 5% C1 0.22F 630V R2 1.8M 5% 8 5

1 7 4

C5 82F/100F 385V

Vac 277V +10% -15%

L6560
3 6 C4 1nF C6 10nF C2 22F 25V

R3 6.2K 5%

R4 330 R6 0.47 1W R8 12K 1%


D95IN264A

INDUCTORS core THOMSON-CSF B1ET2910A L1: primary 100/110T of Litz wire 10 x 0.2mm L2: same as L1 L3: secondary 7T of #32 AWG (0.15mm)

Finally, fig. 6 shows a block diagram of a common electronic ballast. The PFC section is based on the already described L6560 PFC controller, and the ballast section is based on the L6569, high voltage pushpull gate driver. Figure 6. Electronic ballast.

220VAC

L6560 P.F.C.
RVH 400VDC

CVS

VS BOOT

RF CF

L6569 HVHB DRIVER

HVG

CBOOT

OUT

LVG

GND
D95IN306A

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AN830 APPLICATION NOTE

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2003 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com

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