Preferred Device
PbFree Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
*Preferred devices are recommended choices for future use and best overall value.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoCase Symbol RqJC Max 1.17 Unit C/W
**For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Note 3) CollectorEmitter Breakdown Voltage (Note 4) (IC = 0.2 Adc, IB = 0) VCEO(sus) VCEX(sus) 140 160 150 Vdc Vdc Vdc CollectorEmitter Sustaining Voltage (Note 4) (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) CollectorEmitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) Collector Cutoff Current (Note 4) (VCE = 120 Vdc, IB = 0) VCER(sus) ICEO ICEX 10 mAdc mAdc Collector Cutoff Current (Note 4) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCB = 140 Vdc, IE = 0) 2 10 2 5 ICBO IEBO mAdc mAdc Emitter Cutoff Current (Note 4) (VBE = 7 Vdc, IC = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 8 Adc, VCE = 4 Vdc) (Note 4) (IC = 16 Adc, VCE = 4 Vdc) hFE 15 5 60 CollectorEmitter Saturation Voltage (IC = 8 Adc, IB = 800 mAdc) (Note 4) (IC = 16 Adc, IB = 3.2 Adc) BaseEmitter On Voltage (Note 4) (IC = 8 Adc, VCE = 4 Vdc) VCE(sat) Vdc 1.4 4 2.2 VBE(on) Vdc DYNAMIC CHARACTERISTICS Magnitude of CommonEmitter SmallSignal, ShortCircuit, Forward Current Transfer Ratio (IC = 1 A, f = 50 kHz) SmallSignal Current Gain (Note 4) (IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz) |hfe| 4 hfe 40 SECOND BREAKDOWN CHARACTERISTICS Second Breakdown Collector Current with Base Forward Biased t = 1 s (nonrepetitive), VCE = 100 V, See Figure 12 IS/b 1.5 Adc 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. 4. Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device 2N3773 2N3773G 2N6609 Package TO204 TO204 (PbFree) TO204 Shipping 100 Unit / Tray 100 Unit / Tray 100 Unit / Tray
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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PNP
2.0 1.6 IC = 4 A
IC = 16 A
1.2
IC = 8 A IC = 16 A
0.8
2.0 3.0
2.0 3.0
5.0
1.2 VBE(sat) 25C 150C 150C VCE(sat) 2.0 3.0 25C 5.0 7.0 10 20
1.2
0.8
0.8
0.4
0.2 0.3
2.0 3.0
5.0 7.0
10
20
Figure 5. On Voltage
Figure 6. On Voltage
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
60 THERMAL DERATING
40
20 0
40
160
200
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A N C T E D U V
2 2 PL SEATING PLANE
K
M
0.13 (0.005) L G
1
T Q
Q 0.13 (0.005)
T Y
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2N3773/D