Chapter1page1

MicroelectronicsTechnology

E.F.Schubert
2012,allrightsreserved
RensselaerPolytechnicInstitute
Troy,NewYork

SolidStateDevices

- Examplesare:
o Fieldeffecttransistors
o Bipolartransistors
o LEDs
o Lasers
o Photodetectors
o Solarcells

- Se
- T

everalimpo
o Trans
o Gener
o Recom

ransportof
o Transp
Diffus
>0K,





o Transp
motio


Trans
rtantphysic
portofcharg
rationofcha
mbinationof
electrons
port due to
sion is the ra
whenthese
Synonyms
motion;Br
Diffusion
performed
Diffusionr
Netdiffusi

Netdiffusi

port due to
onofcharged
The direct
particles a
electricfie
Negativee

Cha
portofcarri
almechanis
gecarriers(
argecarriers
fchargecarr
o thermal e
andom mov
eparticlesha
s for Diffus
rownianmo
or therma
dbyRobert
resultsincar
ionoccursa
ionoccursa
o an electric
dparticlesc
tion of car
and is direc
eld
electronsdri
pter1page2
iersbydiffu
msdetermin
e.g.electron
s
riers
energy of ca
vement of pa
aveatherma
ion: Therm
tion
al motion
BrownBr
rriertranspo
longthecon
longthepos
c field D
ausedbyan
rier drift de
cted either
iftagainstth
usionanddr
nethebeha
ns)
arriers D
articles (e.g
alenergygre
al motion;
was first
rownianmo
ortifthereis
ncentration
sitivexdirec
Drift. What i
nelectricfiel
epends on
along or a
hedirection
ift
viorofcharg
Diffusion. W
. electrons)
eaterthanz
Random m
identified
otion
saconcentr
gradient
ction
s drift? Drif
d.
the charge
against the
oftheelectr
gecarriers:
What is diffu
at tempera
ero.
motion; Diff
in experim
ationgradie
ft is the dire
e polarity of
direction o
ricfield
sion?
tures
fusive
ments
ent
ected
f the
f the

- O
- R
a
a
In

C
C

Ohmslaw:
o V=Vo
o R=Re
o I=Cu

ecall
nd
nd
nsertionofE
= Current I
densi Current
o e=ele
o n=co
o v=av
o o=co
B
oltage
esistance
rrent
Eq.(2),(3),a
time unit
charge
=
J

= = ity
ementarych
oncentration
verageveloci
onductivity
Cha
asiclawoft
nd(4)intoE
nu
e

=
e
e

u Area
number
harge=1.602
nofelectron
ityofelectro
pter1page3
transport:O
I R V =

A
l
R =
A J I =
l V E =
Eq.(1)yields
E o = J
time unit
el of umber
time unit
electron of r
e J =
210
19
C
spercm
3

ons
Ohmslaw
I
A
l
o
1
=
s
E
ectrons

v n e =
ns
v n
v

(1)

(2)

(3)
(4)
(5)
(6)

- D

Derivationof

o Consid

o Nelec
o Conce
o Theav
o Curre
o wha

:
derelectron
ctronsarein
entration=

n
verageveloc
ntdensity:=
atwastobe

Cha
nsinavolum
nsidethevol
x A
N
n
d
=
cityofcarrie
=

A
N e
J

=
d
shown
pter1page4
e J =
meV=Adx
ume
ersis=

v =
x A
N e
t
N
=
d d

v n
t
x
d
d

n e
t
x
=
d
d

v n
(7)

- R
- C
- T
- H
- R

esistivity=
onductivity
heresistivity
Howmanyor
easonforth
o Insula
o Metal
o Semic

o What



o Examp

=o
yshowsala
rdersofmag
helargevaria
ator:
l:
conductor:
isthereaso
Chemicaln
Difference
Differe

ples:
Metal:
Semicondu
Insulator:

Cha
Conductiv
rgevariation
gnitude?
ation:Conce
Allelec
Electro
Somee
onforthesec
natureofele
esintheche
enceinnumb
uctor:

pter1page5
vityandresi
dimension(
dimension(

n
entrationof
ctronsaretig
nscanfreely
electronscan
conductivity
ementorco
micalbond
beroffreee
n=10
22

n=10
15
1
n=10
5

stivity
()=Ocm
(o)=O
1
cm
electrons:
ghtlybound
ymoveabou
nfreelymov
ydifferences
mpound

electrons
cm
3
10
20
cm
3
cm
3
m
1
=Scm
1

toatoms
utthemeta
veaboutthe
s?
3

l
ecrystal

- C

- Ex

- E
- E

- F

- E
o
o
- E

hemicalmo
xamples:
lectroninva
lectronina
reeelectron
lectronsins
Collisions
Electrons

lectrostatic
del:Electron
acuum =
solid =
ns = fre
= fre
Fre
solids:
withlattice
feelelect
potentialin
Cha
Freeele
nisnotlocal
trulyfreee
quasifree
eetomovea
eetomovein
eeelectrons
atomsarep
rostaticpote
asolid:
pter1page6
ectronsinas
lizedinapar

electron
electron
about(diffus
nanelectric
canforman
possible
entialofcrys
solid
rticularchem
sion)
cfield(drift)
nelectricalc
stallattice
micalbond

current

Chapter1page7
o Collisionswithlatticeatomsareminimizedinastrictlyperiodicpotential,thatis,
inacrystallinesolid
o Influenceofthelatticeistakenintoaccountbyaneffectivemassofelectrons
Example:
m
e
= 9.110
31
kg (freeelectron)
m
e
* = 6.110
32
kg=0.067m
e
(electroninGaAs)

- Comparison:Crystallinesolidversusamorphoussolid
o Highpuritycrystallinesolid=hightechnologysolid
Example:Laser,LED,integratedcircuit,microprocessorchip
o Amorphoussolid=lowcostsolid
Example:AmorphousSisolarcell

- T

- T

herearediff
o Single
o Polyc
o Which
o Which
o Which

herearediff
o Simple
o Body
o Facec
o What
o What
ferenttypes
ecrystalline
crystallineso
honehasth
honehasth
honeiseasi
ferentcrysta
ecubiccryst
centeredcu
centeredcub
isthedefini
isthedefini
Cha
sofsolids:
solids
olids
ehighestm
ehighestele
esttofabric
alstructures
tal
ubiccrystal
biccrystal
itionofthel
itionofaun
pter1page8
Crystals

echanicalst
ectricalcond
cate?
s.Commonc
latticeconst
itcell?
o A
rength?
ductivity?
crystalstruct
tanta
0
?
Amorphouss
turesare:
solids

- C

- B

- Ep
rystalgrowt
o isana
o isaslo
o requir
Bulkgrowth
o Applic
o Comm
o Name
o Other
pitaxialgro
o Epitax
o Epitax
o Epitax
o Epitax
o Epitax
o Applic
th
atombyato
owprocess
resT>>300
ofsinglecry
cation:Subst
montechniq
eoftechniqu
rtechniquei
wthofthinl
xy=growth
xy=thinfil
xyisaslowp
xyisanato
xyrequiresT
cations:
Cha
Cry
omassembly
Kforgrowt
ystals
trates
ue:Growthf
ue:Czochrals
sthefloatz
layersofsin
hofacrystal
mgrowth
process(1m
mbyatom
T>>300K
pter1page9
stalgrowth

yprocess
h

fromtheme
skitechniqu
zonetechniq
glecrystals
linelayeron
m/hr)
process

elt
ue(shownin
que(notdisc
ntopofacry
nthefigureb
cussedhere)
ystallinesub
below)
)

bstrate

o Vapor



o Other
pnjunctio
Heterostru
rPhaseEpita
Whyisitc
Chemicalr
- Si:
- Ga
Growthap

rgrowthtec
Chap
ongrowth(e
ucturegrow
axy(VPE)is
calledVapor
reactionfor

As:
pparatus:Se
hnique:Mol
pter1page10
.g.pnjuncti
th(e.g.AlAs
acommone
PhaseEpita
thegrowth
SiH
4
Si+
(CH
3
)
3
Ga+A
eillustration
lecularbeam
ionLED)
s/GaAs)
epitaxialgro
axy?
of
+2H
2

AsH
3
Ga
n
mEpitaxy(M
wthtechniq
aAs+3CH
4

MBE,notdisc
que
cussedhere))

Chap pter1page11

Chapter1page12
Thefourtypesofcrystals

- Recallsomechemistry
o Atomshaveelectronshells
o Acompletelyfilledshellhas2,8,or18electrons
o Noblegaseshave2(He),10(Ne),18(Ar),,electrons
o Noblegasesareverystableanddonotreactwithotheratoms
o Atomshavethetendencytoassumeanoblegaselectronconfiguration

- Thereare4mainclassesofcrystals:
o Metalliccrystals
o Ioniccrystals
o Covalentcrystals
o Molecularcrystals

o Next,wewilldiscussthese4typesofcrystals

1. Metalliccrystals

- Consideranatomwithonelooselyboundelectron:
o Na (11electrons=2+8+1electron)
o Cu (29electrons=2+8+18+1electron)
- Inmetalliccrystals,electronsbecomepracticallyfree
- Thepositivelychargedioncoresareheldtogetherbyaseaofelectrons
- Metalliccrystalshavehighelectricalconductivity
- Example:Copper,Cu
o 29protons,29electrons,34neutrons
o Molarmass=(29+34)g/mol=63g/mol
o Avogadrosnumber=610
23
atoms/mol
o MassdensityofCu=9g/cm
3

o Atoms per cm
3
= 6 10
23
atoms/mol (1/63) mol/g 9 g/cm
3
=
=8.510
22
atoms/cm
3

o Electronspercm
3
=8.510
22
electrons/cm
3

2. Ioniccrystals

- Twotypesofatomswithlargedifferenceinelectronegativity
- Oneatomhasalooselyboundelectron
- One atom has one electron missing from a noblegas configuration (this is a highly
electronegativeatom)
- Transferofthelooselyboundelectrontotheelectronegativeatomoccurs

- T

- N
- Io
- Ex

3. Cova

- A
- B
- Ex

hustheionic
Nofreeelect
oniccrystals
xample:Sod
o Na
o Cl
o NaCli
lentcrystals
Atomswithp
ondsbetwe
xample:Silic
o Sihas
o Illustr
electr
ccrystalcon
rons
areinsulato
diumchlorid
(11
(17
saninsulato
s
partiallyfilled
enlikeatom
con,Si
4outerelec
ation below
ronshelland

Chap
nsistsofposi
ors
e,NaCl
1electrons=
7electrons=
or
doutershel
msarealway
ctrons
w shows tha
dthusisina
pter1page13
itiveandneg
=2+8+1el
=181elec

lsbondbysh
scovalent(e
at the cente
stableconfi
gativeions
ectron)
ctron)
haringelect
e.g.O
2
,N
2
,
er Si atom
iguration

ronstofillth
)
has 8 electr
heoutershe
rons in its o
ells
outer

4. Mole

- B
- M
W
- Ex

5. Hybri

ecularcrysta
ondingforce
Molecularcry
Waalsbonds
xamples:
o CO
2
cr
o Snow
idbondingc
Group
IV
III
II
I
als
esareVand
ystalsaretyp
rystals(dryi
crystals
crystals(this
Group
IV
V
VI
VII
Chap
derWaalsfo
picallymade
ce,lowtem
sisnotasep
pter1page14
orces(polariz
eupofmole
peraturesne
parateclass
Elements
Si
GaAs
ZnS
NaCl
zationforces
eculesthata
eeded)

butamixtu
s
s)
reheldtoge
reof2class
co
most
Mo
etherbyVan
es)
Bond
ovalent
tlycovalent
ostlyionic
ionic
nder