1D Objects:

Nanowires

There are many ways to mass-produce nanowires by self-assembly

Silicon Nanowire Growth

Si(111) substrate

Wu et al., Chem. Eur. J. 8, 1261 (2002)

Catalytic Nanowire Growth of Ge by Precipitation from Solution in Au

Wu and Yang, JACS 123, 3165 (2001)

ZnO Nanowires Grown by Precipitation from a Solution

SEM images of ZnO nanowire arrays grown on sapphire substrates. A top view of the well-faceted hexagonal nanowire tips is shown in (E). (F) High-resolution TEM image of an individual ZnO nanowire showing its <0001> growth direction. For the nanowire growth, clean (110) sapphire substrates were coated with a 10 to 35 thick layer of Au, with or without using TEM grids as shadow masks.

Peidong Yang et al., Science 292, 1897 (2001) and Int. J. of Nanoscience 1, 1 (2002)

Cu/Co Nanowires Grown by Electroplating into Etched Pores

Ohgai, , Ansermet, Nanotechnology 14, 978 (2003)

Carbon Nanotubes

Patterned Growth from Catalytic Metals (Ni, Co, Fe,)

Free-Standing Nanotubes between Pillars

Wiring by Self-Assembly ?
Lefebvre et al., PRL 90, 217401 (2003)

Indexing of Nanotubes

zigzag m=0

armchair n=m

chiral nm

Circumference:

C r = na1 + ma 2

 - Bands Quantized along the Circumference of a Nanotube

Calculated Density of States

Scanning Tunneling Spectroscopy (STS)

Review: Cees Dekker, Physics Today, May 1999, p. 22.

Separate Optical Spectra for Nanotubes with Different Diameter and Chirality

Bachilo, ... , Weisman, Science 298, 2361 (2002)

Isolating Nanotubes inside Micelles

sodium dodecyl sulfate (SDS)

O'Connell,... Weisman, Smalley, Science 297, 593 (2002)

Carbon Nanotubes: Energy Scales

~10 eV ~0.5 eV ~0.1 eV : : : ~0.001 eV

Band Width (-Band) Quantization along the Circumference (k = 1/R) Coulomb Blockade (Charging Energy ECoul = eQ/C) Quantization along the Axis (k = 2/L) Luttinger Liquid (Many-Electron Coupling)

Quantized Conductance
Dipping nanotubes into a liquid metal electrode

Conductance Quantum: G0 = 2 e2/h 1 / 13k (Factor 2 for spin ,) Each wavefunction (= band = channel ) contributes G0 . Expect 2G0 in nanotubes (two identical bands), but symmetry breaking causes a reduction to 1G0 (one band is lower).

Limits of Electronics from Information Theory Conductance per Channel: G = G0T Energy to switch one bit: Time to switch one bit: E = kBT ln2 t=h/E Distance d G0 = 2 e2/h T1

Energy to transport a bit: E = kBT /c d

Birnbaum and Williams, Physics Today, Jan. 2000, p. 38. Landauer, Feynman Lectures on Computation .

Wire Arrays at Surfaces

Growth Modes

3D:

2D:

Stepped Silicon Surfaces as Templates

6 nm

15 nm

80 nm

Tobacco Mosaic Virus

Stepped Si(111)7x7 Straight steps because of the large 7x7 cell. Large kinks cost energy.

1 kink in 20 000 atoms, spacing still imperfect.

15 nm

Atomic Precision below 10 nm Matched to Small Proteins

Period =

5.7 nm

RNase = 4nm x 6 nm

In Pursuit of the Ultimate Storage Medium 1 Bit = 1 Atom

Silicon Surface CD-ROM

Track spacing 5 Atom Rows

10 m 10 nm Density
x106 Bennewitz et al., Nanotechnology 13, 499 (2002)

Many metals catalyze chains on Si(111) at ~1/5 monolayer coverage

Au

Graphitic Honeycomb Chain 1D

Variable Chain Spacing/Coupling