EE2207 Electronic Devices and Circuits Lab REVISION

For all devices you must know the following 1. 2. 3. 4. 5. 6. 7. Device Semiconductor Structure Number of terminals, number of junctions and terminal names Symbol Other names VI characteristics model graph Applications Parameters
No. of layers terminals and junctions No. of junctions

Semiconductor Structure, symbol

Terminal Names

Other descriptions

Important applications

Diode

Zener Diode

Transistor (NPN) (Bipolar junction transistor)

Two layer, two terminal uni junction (single junction) semiconductor device Two layer, two terminal uni junction (single junction) semiconductor device Three layer, Three terminal Two junctions Semiconductor device

Anode Cathode

1.Two terminal 1.Rectifier uni junction 2.Switch device 2.Avalanche breakdown 3.Lightly doped 1.Heavily doped 2.Zener breakdown 1.Voltage control 2.Voltage stabilization

Anode Cathode

Emitter Base Collector

Bipolar Current controlled device

1.Amplification 2.Switching 3.Impedance Matching

FET (N-Channel) (Junction Field Effect Transistor)

Three terminal Two junctions

Source Gate Drain

1.Unipolar device 2.Voltage controlled Device

1.Amplification 2.Voltage variable resistor

UJT

Three terminal Uni- junction device

Emitter Base1 Base2

Posses negative resistance

Relaxation Oscillator

SCR (silicon Controlled Rectiifer)

Four layer Three terminal Three junctions device

Anode Cathode Gate

1.Thyristor 2.Power control device 3.Latch with trigger input

1.Switching for power control applications 2.Controlled rectifier

Diac

2-terminal bidirectional device

Anode1 Anode2

1.Symmetrical bi-Directional device 2.Three layer two terminal device 3.Biderectional avalanche diode 4.(Diode A.C. Switch) 5. Biderictional Thyristor

Symmetrical bidirectional Switching

Triac

3-terminal , Bidirectional device

Main Terminal 1 Main Terminal 2 Gate

1.Biderictional Thyristor (Two SCRs in parallel)

1.Control ac power to load

Diode Parameters
1. Forward Dynamic Resistance 2. Reverse resistance 3. Static resistance

Zener diode

Transistor Parameters CB Configuration

Other names of CB Grounded base ConfigurationImpedance matching,

Calculation of hybrid parameters

CE Configuration
Grounded emitter Configuration- Highest current gaincommonly used as (high frequency) Radio frequency amplifier Calculation of hybrid parameters Same procedure can be followed for CE also.

CC configuration
Grounded collector Configuration- Emitter follower, impedance matching, Buffer amplifier Calculation of hybrid parameters

SCR (Silicon Controlled rectifier)

1. Latching current : is the minimum current required to latch or trigger the device from its OFFState to its ON-State 2. Holding current: Holding current is the minimum value of current to hold the device in ON-state For turning the device OFF, the anode current should be lowered below IH by increasing the external resistance.

Photo diode
Dark current : Reverse saturation current with out any light is termed as dark current.

UJT (Uni-junction Transistor)

1. Negative resistance = VBE/IE. 2. Intrinsic stand off ratio = (VP-VBE)/VB1B2.

Formula for intrinsic standoff ratio = VP VD / VB1B2 , where VD = 0.7 V

HWR and FWR

Pin details BJT

FET terminal Identification

UJT terminal identification

SCR terminal identification