AO4474

30V N-Channel MOSFET

General Description
The AO4474 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

Product Summary
VDS (V) = 30V (VGS = 10V) ID = 13.4A RDS(ON) < 11.5m (VGS = 10V) RDS(ON) < 13.5m (VGS = 4.5V)

100% UIS Tested 100% Rg Tested

SOIC-8 Top View D D D D Bottom View D

G S S S

G S

Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A, F Pulsed Drain Current B TA=25 C Power Dissipation Avalanche Current B, G Repetitive avalanche energy 0.1mH
B, G

Maximum 30 12 13.4 10.7 60 3.7 2.4 42 88 -55 to 150

Units V V A

VGS TA=25 C TA=70 C IDSM IDM TA=70 C PD IAR EAR TJ, TSTG

W A mJ C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 28 57 16

Max 34 71 23

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4474

Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V C TJ=55 VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=13.4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance Diode Forward Voltage VDS=5V, ID=13.4A IS=1A,VGS=0V C TJ=125 1 60 9.5 16.2 11 40 0.74 1.0 5 1210 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.8 330 85 1.2 22 VGS=10V, VDS=15V, ID=13.4A 10 3.7 2.7 10 VGS=10V, VDS=15V, RL=1.1, RGEN=3 IF=13.4A, dI/dt=100A/s 6.3 21 2.8 36 47 20 55 27 45 1452 396 119 1.6 28 13 11.5 18 13.5 1.55 Min 30 1 5 0.1 2.5 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=13.4A, dI/dt=100A/s IF=13.4A, dI/dt=500A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=13.4A, dI/dt=500A/s
2

A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25 C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G: L=100uH, VDD=0V, RG=0, rated VDS=30V and VGS=10V Rev4: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4474

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 10V 80 4.5V ID(A) 3V 40 10 20 VGS=2.5V 5 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VDS (Volts) Fig 1: On-Region Characteristics 15 Normalized On-Resistance 13 RDS(ON) (m ) VGS=4.5V 11 9 VGS=10V 7 5 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 2 1.8 ID=13.4A 1.6 1.4 1.2 1 0.8 0.6 0 30 60 90 120 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5 VGS=10V VGS(Volts) Figure 2: Transfer Characteristics 6V 25 20 15 125 25C VDS=5V 30

60 ID (A) 0 20

1.0E+02 ID=13.4A 1.0E+01 125C 1.0E+00 IS (A) 125C 25C 1.0E-01 1.0E-02 1.0E-03 1.0E-04

RDS(ON) (m )

15

10 25C

5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

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AO4474

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=13.4A Capacitance (pF) 1500 Ciss 2000

1000

500 Crss 0 0 5 10

Coss

15

20

25

30

VDS (Volts) Figure 8: Capacitance Characteristics

100 IA, Peak Avalanche Current (A)

In descending order TA=25C, 100C, 125C, 150C

100.0 RDS(ON) limited ID (Amps) 10.0 1ms 10ms 1.0 DC TJ(Max)=150C TA=25C 100

10s

10

1 0.001

0.1 0.01 0.1 1 10 100 1000 0.1 10 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 1 100

Time in Avalache, tA (ms) Figure 9: Single Pulse Avalanche Capability

140 120 100 Power (W) 80 60 40 20 0 0.001 TJ(Max)=150C TA=25C

0.01

0.1

10

100

1000

Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note G)

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4474

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 ZqJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=34C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01 Single Pulse

PD TON T 0.01 0.1 1 10 100 1000

0.001 0.00001

0.0001

0.001

Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note G)

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com