DG444/445

Vishay Siliconix

Quad SPST CMOS Analog Switches

FEATURES
D D D D D D D Low On-Resistance: 50 W Low Leakage: 80 pA Low Power Consumption: 22 nW Fast Switching ActiontON: 120 ns Low Charge Injection DG211/DG212 Upgrades TTL/CMOS Logic Compatible

BENEFITS
D Low Signal Errors and Distortion D Reduced Power Supply Requirements D Faster Throughput D Improved Reliability D Reduced Pedestal Errors D Simple Interfacing

APPLICATIONS
D D D D D D D D Audio Switching Battery Powered Systems Data Acquisition Sample-and-Hold Circuits Telecommunication Systems Automatic Test Equipment Single Supply Circuits Hard Disk Drives

DESCRIPTION
The DG444/DG445 monolithic quad analog switches are designed to provide high speed, low error switching of analog signals. The DG444 has a normally closed function. The DG445 has a normally open function. Combining low power (22 nW, typ) with high speed (tON: 120 ns, typ), the DG444/DG445 are ideally suited for upgrading DG211/212 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. To achieve high-voltage ratings and superior switching performance, the DG444/DG445 are built on Vishay Siliconixs high-voltage silicon-gate process. An epitaxial layer prevents latchup.

Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off.

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

Dual-In-Line and SOIC

IN1 D1 S1 V GND S4 D4 IN4

1 2 3 4

16 15 14 13

IN2

TRUTH TABLE
Logic DG444
ON OFF Logic 0 v 0.8 V Logic 1 w 2.4 V

DG445
OFF ON

D2 S2 V+ VL

0 1

DG444
5 6 7 8 12 11 10 9

ORDERING INFORMATION
S3 D3 IN3 40 40_C to 85_C 16-Pin Narrow SOIC DG445DY Top View

Temp Range

Package
16-Pin Plastic DIP

Part Number
DG444DJ DG445DJ DG444DY

Document Number: 70054 S-52433Rev. F, 06-Sep-99

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DG444/445
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND 0.3 V) to (V+) + 0.3 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V) 2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 8 mW/_C above 75_C

SPECIFICATIONS FOR DUAL SUPPLIES

Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) IS = 10 mA, VD = "8.5 V V+ = 13.5 V, V = 13.5 V V+ = 16.5, , V = 16.5 V VD = "15 15.5 5V V, VS = #15.5 15 5 V V+ = 16.5 V, V = 16.5 V VS = VD = "15.5 V Full Room Full Room Full Room Full Room Full 0.5 5 0.5 5 0.5 10 15 50 "0.01 "0.01 "0.08 15 85 100 0.5 5 0.5 5 0.5 10 nA A V W

D Suffix
40 to 85_C

Symbol

V+ = 15 V, V = 15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve

Tempa

Minb

Typc

Maxb

Unit

Digital Control
Input Current VIN Low Input Current VIN High IIL IIH VIN under test = 0.8 V All Other = 2.4 V VIN under test = 2.4 V All Other = 0.8 V Full Full 500 500 0.01 0.01 500 nA 500

Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injectione Off Isolatione Crosstalk (Channel-to-Channel)d Source Off Capacitance Drain Off Capacitance Channel On Capacitance tON tOFF Q OIRR XTALK CS(off) CD(off) CD(on) Room RL = 1 kW , CL = 35 pF VS = "10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 50 W , CL = 5 pF, f = 1 MHz f = 1 MHz VANALOG = 0 V DG444 DG445 Room Room Room Room Room Room Room Room 120 110 160 1 60 100 4 4 16 pF F 250 140 210 pC dB ns

Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I IL IGND Room Full V = 16.5 V+ 16 5 V, V, V V = 16.5 16 5 V VIN = 0 or 5 V Room Full Room Full Room Full 1 5 1 5 0.001 0.0001 1 5 mA 1 5

0.001 0.001

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Document Number: 70054 S-52433Rev. F, 06-Sep-99

DG444/445
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistanced VANALOG rDS(on) IS = 10 mA, VD = 3 V, 8 V V+ = 10.8 V, VL = 5.25 V Full Room Full 0 100 12 160 200 V W

D Suffix
40 to 85_C

Symbol

V+ = 12 V, V = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve

Tempa

Minb

Typc

Maxb

Unit

Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection tON tOFF Q RL = 1 kW , CL = 35 p pF, , VS = 8 V S Figure See Fi 2 CL = 1 nF, Vgen = 6 V, Rgen = 0 W Room Room Room 300 60 2 450 ns 200 pC

Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I IL IGND V+ = 13.2 V, VIN = 0 or 5 V VIN = 0 or 5 V VL = 5.25 V, VIN = 0 or 5 V VIN = 0 or 5 V Room Full Room Full Room Full Room Full 1 5 1 5 0.001 0.0001 0.001 0.001 1 5 mA 1 5

Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function.

Document Number: 70054 S-52433Rev. F, 06-Sep-99

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DG444/445
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
80 r DS(on) Drain-Source On-Resistance ( W ) 70 60 100 50 40 30 20 10 0 15 10 5 0 5 10 15 VD Drain Voltage (V) 0_C 40_C 40 20 0 100 1k 10 k 100 k 1M 10 M V+ = 15 V V = 15 V Ref. 10 dBm 85_C 25_C (dB) 80 60 Off Isolation

rDS(on) vs. VD and Temnperature

V+ = 15 V V = 15 V

Crosstak and Off Isolation vs. Frequency

140 120

Crosstalk

f Frequency (Hz)

Charge Injection vs. Source Voltage

50 40 30 20 Q (pC) 10 0 10 20 30 10 5 0 VS Source Voltage (V) 5 10 0 0 V+ = 12 V V = 0 V 3 V TH (V) V+ = 15 V V = 15 V CL = 1 nF 4

Switching Threshold vs. Supply Voltage

VL = 7 V

1 VL = 5 V

12

16

20

VSUPPLY (V)

Source/Drain Leakage Currents

20 IS(off) , ID(off) 0 0 10

Source/Drain Leakage Currents (Single 12-V Supply)

IS(off), ID(off)

20 I S, I D (pA) ID(on) 40 I S, I D (pA) 10 IS(on) + ID(on) 20 V+ = 12 V V = 0 V For ID, VS = 0 V For IS, VD = 0 V

60 V+ = 15 V V = 15 V For I(off), VD = VS 30

80

100 15 10 5 0 5 10 15

40 0 2 4 6 8 10 12

VD or VS Drain or Source Voltage (V)

VD or VS Drain or Source Voltage (V)

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Document Number: 70054 S-52433Rev. F, 06-Sep-99

DG444/445
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Power Supply Voltage
160 140 400 120 tON DG444 tOFF 300 t (ns) tON 200 tON DG445 500 V = 0 V VL = 5 V

Switching Times vs. Power Supply Voltage

t (ns)

100 80 60 40 20 "10 "12 "14 "16 "18 "20 "22 "VSUPPLY (V) DG444 DG445 tON tOFF

100

tOFF

tOFF

0 8 10 12 14 16 18 20 22

V+ Positive Supply (V)

100 mA 10 mA 1 mA I L , I, I+, I GND 100 nA 10 nA

Supply Current vs. Temperature

25

Source/Drain Capacitance vs. Analog Voltage

V+ = 15 V V = 15 V CS(on) + CD(on) C S, D (pF) 15

20 I+, IGND

(I) 1 nA 100 pA

10

5 10 pA 1 pA 55 25 0 25 50 75 100 125 IL 0 15 10 5 0 5 10 15 Temperature (_C) VANALOG Analog Voltage (V) CS(off), CD(off)

Switching Time vs. Input Voltage

160 140 120 100 tON 80 60 40 20 2 3 Input Voltage (V) 4 5 DG444 DG445 tOFF V+ = 15 V V = 15 V tON

t (ns)

Document Number: 70054 S-52433Rev. F, 06-Sep-99

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DG444/445
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+

S VL V VIN Level Shift/ Drive V+ GND D

FIGURE 1.

TEST CIRCUITS
+5 V +15 V Logic Input VL "10 V S IN 3V GND V Switch Output 0V tON Logic input waveform is inverted for DG445. V+ D RL 1 kW CL 35 pF 0V VO Switch Input VS VO 80% 80% tOFF 3V 50% 50% tr <20 ns tf <20 ns

15 V

CL (includes fixture and stray capacitance)

Note:

FIGURE 2. Switching Time

+5 V +15 V

DVO VO

Rg

VL S IN

V+ D CL 1 nF V VO

INX OFF (DG444) ON OFF

Vg 3V

GND

15 V

INX (DG445)

OFF

ON Q = DVO x CL

OFF

FIGURE 3. Charge Injection

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Document Number: 70054 S-52433Rev. F, 06-Sep-99

DG444/445
Vishay Siliconix
TEST CIRCUITS
C = 1 mF tantalum in parallel with 0.01 mF ceramic +5 V +15 V C +5 V VL VS Rg = 50 W IN1 0V, 2.4 V S2 NC IN2 GND V C 15 V 15 V Off Isolation = 20 log XTALK Isolation = 20 log C = RF bypass VS VO VS VO RL D2 VO 0V, 2.4 V S1 V+ D1 VL 50 W VS Rg = 50 W IN GND V RL S V+ D VO +15 V C

0V, 2.4 V

FIGURE 4. Crosstalk
+5 V +15 V C

FIGURE 5. Off Isolation

VL

V+

S Meter

IN 0 V, 2.4 V D GND V C

HP4192A Impedance Analyzer or Equivalent f = 1 MHz

15 V

FIGURE 6. Source/Drain Capacitances

APPLICATIONS
+5 V +15 V

+15 V

VL
1/ 4

V+

DG444

+15 V VOUT 10 kW

+5 V VIN GND V

0V

0V

FIGURE 7. Level Shifter

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DG444/445
Vishay Siliconix
APPLICATIONS

VIN +5V VL

+ +15 V V+

VOUT Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit.

GAIN1 AV = 1

R1 90 kW With SW4 Closed: VOUT VIN = R1 + R2 + R3 + R4 R4 = 100

GAIN2 AV = 10

R2 5 kW

GAIN3 AV = 20 GAIN4 AV = 100

R3 4 kW

R4 1 kW

DG444 or DG445
V GND

15 V

FIGURE 8. Precision-Weighted Resistor Programmable-Gain Amplifier

+5 V V1

+15 V

Logic Input Low = Sample High = Hold

DG444

+15 V 15 V VIN + 5 MW 5.1 MW 30 pF 15 V C1 50 pF V2 J202 R1 200 kW J500

+15 V

2N4400 VOUT J507

GND

C2 1000 pF

FIGURE 9. Precision Sample-and-Hold

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Document Number: 70054 S-52433Rev. F, 06-Sep-99

Legal Disclaimer Notice

Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 Revision: 08-Apr-05

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