EIE209 Basic Electronics

Transistor Devices

Contents
• BJT and FET
• Characteristics
• Operations

Prof. C.K. Tse: T ransistor devices

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What is a transistor?
Three-terminal device
i
whose voltage-current
relationship is controlled by +
ic
a third voltage or current
v
+
vc –
We may regard a transistor as a
–
controlled voltage or current
source.

Prof. C.K. Tse: T ransistor devices

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Types of transistors
According to the physics of the device, we can
classify transistors into two main classes:

1. Bipolar junction transistors (BJT)

2. Field effect transistors (FET)
Diode-based device
which is usually blocked
unless the control
Conduction is controlled
terminals are forward-
by electric field which is
biased. So, the control is
produced by voltage
a current, and BJT is a
applied to the control
current amplifier by
terminals. So, the control
nature.
draws no current and
FET is a voltage-
controlled device.
Prof. C.K. Tse: T ransistor devices
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 Bipolar junction transistor (BJT)
a bit of physics…
2 types of BJT devices
Consider the npn BJT. The collector-base
collector collector junction is reverse-biased. So, no current can
flow down.
C C
B But if the base-emitter junction is forward-
base B
biased (≈0.6V), then the diode “contact
E E potential barrier” can be overcome. Electrons
can go to base — called base injection.
emitter emitter
npn transistor pnp transistor These electrons are minority carriers, which
are strongly attracted/captured by the
Basic model collector. Hence, current flows down from
C C collector to emitter.

THUS, we use a small base current to induce a

B B IC
IC large collector current.
IB IB
E E
This large collector current is proportional to
npn pnp
the base injection. IC = b IB
Prof. C.K. Tse: T ransistor devices
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 Simple BJT model
Collector Consider npn transistor.

IC Collector is more positive than Emitter.

Base B-E and B-C junctions are pn junctions, like diodes.
In normal operation, B-E is forward biased and B-C is
IB reverse biased.

Emitter Main relation:

Collector
n IC IC = bI B
Base IB p
n b ≈ 100 typically
Emitter
Prof. C.K. Tse: T ransistor devices
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 Some properties
Collector VBE ≈ 0.6 V when the transistor turns on.
IC Never try to stick a large voltage across VBE
Base because it may produce enormous current
or may just kill the device!
IB
Emitter b is a “bad” parameter. Don’t trust the
databook. Its value can vary to ±50% or more.

IC IC = bIB holds only under some carefully set

IB conditions. We’ll look at it later.

IE = IB + IC
Prof. C.K. Tse: T ransistor devices
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Typical operations
1. Cut-off

2. Active operation
+10 V
3. Saturation

RL IC
Determining factors:
IB
• How large is IB or VBE
• How large is RL +

VBE
–

Prof. C.K. Tse: T ransistor devices

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 Cut-off
When the B-E junction is not forward-biased, the
transistor is basically not doing anything.

This is called CUT-OFF. +10 V

0A

VBE = 0

Prof. C.K. Tse: T ransistor devices

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Active operation
When the following holds:

IC = bI B
+10 V
the BJT is said to be in active
operation. RL IC
This is the case of current IB
amplification.
+
But we need ICRL < 10V VBE
–

Prof. C.K. Tse: T ransistor devices

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 Condition for active operation: ICRL<VCC
Let b = 100.
+10 V +10 V +10 V

1kΩ IC=1mA 5kΩ IC=1mA 10kΩ IC=1mA

IB=10µA + IB=10µA + IB=10µA +

VCE = 9V VCE = 5V VCE = 0V

– – –

How about 11kΩ?

Prof. C.K. Tse: T ransistor devices

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Saturation
When VCE is reduced to 0, the BJT is saturated.

+10 V IC cannot be 1mA!!

In fact, it must drop in order
15kΩ IC=0.6667mA
to make up for the total
voltage.

IB=10µA + In this case,

VCE = 0V IC = 10V/15kΩ = 0.6667mA

–
IC = bI B

Prof. C.K. Tse: T ransistor devices

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 What makes it saturate?

Large RL Large IB
+10 V +10 V

10kΩ IC=1mA 1kΩ IC=10mA

IB=10µA + IB=100µA +
VCE = 0V VCE = 0V
just saturate! just saturate!
– –

Prof. C.K. Tse: T ransistor devices

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 Application: BJT as switch

Saturation 10V
(10 - 0.7) V
IB = = 9.3mA
1kW Situation 1
10V 0.1A
100Ω
IC = 100x9.3 = 0.93A which is lamp
too large and surely saturates
C
the BJT!!! So, IC ≈ 0.1A. 1kW B
Light bulb turns on.
Situation 2 E
Cut-off
IB = IC = 0. Light bulb turns off.

Prof. C.K. Tse: T ransistor devices

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Detailed BJT characteristics
Input characteristic (IB versus VBE)
Obviously, VBE and IB are related by diode characteristic.
Ê V BE / VT ˆ
I B = I ss ÁË e - 1˜¯
IB

thermal voltage Boltzman’s constant

absolute temperature
kT
VT = ≈25 mV @room temp
q
VBE
0.6 electronic charge

Prof. C.K. Tse: T ransistor devices

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 Detailed BJT characteristics
Transfer characteristic (IC versus VBE)
Also, IC is just IB multiplied by b.
Ê V BE / VT ˆ Ê V BE / VT ˆ
IC = bI ss ÁËe - 1¯ = I s ÁË e
˜ - 1˜¯
IC = b IB

thermal voltage Boltzman’s constant

absolute temperature
same shape as IB kT
VT = ≈25 mV @room temp
q
VBE
0.6 electronic charge

Prof. C.K. Tse: T ransistor devices

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Detailed BJT characteristics
Output characteristic (IC versus VCE)
IC is nearly flat unless near saturation.
IC
IC
+
for one particular
choice of IB or VBE
VCE
–

Not Ohm’s law!!

VCE

Prof. C.K. Tse: T ransistor devices

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 Important small-signal characteristic
IB

Different IB (or VBE) has

different output characteristic.

A range of VBE corresponds to

a range of IC. VBE
0.6 V

Transconductance: IC IC1 –1 IC
slope = gm = W saturation
DIC
0.025
VBE =0.68 V
gm = active VBE =0.65 V
DVBE IC1
VBE =0.60 V

= slope VBE =0 (cut-off)

VBE VCE
on the transfer char. 0.2 V
0.6 0.65 0.68 V

Prof. C.K. Tse: T ransistor devices

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What is gm?

DIC
gm =
DVBE A simple differentiation gives
dIC d Ê ˆ
gm = = Á bI ss (e V BE / VT
- 1)˜
dVBE dVBE Ë ¯
1
= bI ss (e V BE / VT
)
VT
IC IC
ª or at room temp
VT 25mV

Prof. C.K. Tse: T ransistor devices

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A bit more precise
At saturation, VCE is not really 0, it is about 0.2 V.

IC
+10 V

for one particular 10kΩ IC=0.98mA

choice of IB or VBE not 1mA!!
IB=10µA +
VCE = 0.2V

–
VCE
0.2V

Prof. C.K. Tse: T ransistor devices

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 A bit more precise
In active region, IC is not really flat. It goes up gently! This is
called Early Effect!

IC

IC
slope ≈ IC / VA
for one particular
choice of IB or VBE
Early voltage
typically 100V

VCE
0.2V

Prof. C.K. Tse: T ransistor devices

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 Field Effect Transistors (FET)
Drain

Gate channel Current goes down from D to S,

controlled by the gate voltage at G.

Source

Two kinds of channels: Two kinds of gate electrodes:

n-channel FET Junction FET (JFET)

p-channel FET Metal-oxide-semiconductor FET (MOSFET)

Prof. C.K. Tse: T ransistor devices

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Terminology confusion
Before we move on, it is important to clarify some possible confusions
due to terminology difference.

BJT saturation region active region cut-off

FET triode region saturation region cut-off

Prof. C.K. Tse: T ransistor devices

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n-channel MOSFET
S G D

SiO2 insulator

n n The channel is not

p conducting initially when
gate is zero volt.
When gate is +ve,
electrons are attracted to
it and this becomes n-type
body or substrate conducting channel.

This action is called

channel enhancement.

Prof. C.K. Tse: T ransistor devices

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 n-channel MOSFET characteristic
Drain Characteristics:

ID Gate current = 0 (always)

+ The channel conduction is determined by VGS
VDS
Gate ID
– triode VGS=2V
+
VG
S – Source saturation VGS=1.9V
(like “active” in BJT)
VGS=1.8V

Threshold voltage VGS=1.7V

VDS
Vth = 1.7 V, for example.

Prof. C.K. Tse: T ransistor devices

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 Saturation region
Drain So, it looks like the npn BJT!! But if we look
closer, we find that the saturation current is
ID proportional to (VGS–Vth)2.
+
VDS ID = K (VGS–Vth)2 for saturation region
Gate ID
– VGS=2V
+
VG
S – Source saturation VGS=1.9V
(like “active” in BJT)
VGS=1.8V

Threshold voltage VGS=1.7V

VDS
Vth = 1.7 V, for example.

Prof. C.K. Tse: T ransistor devices

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 Saturation region
Drain ID = K (VGS–Vth)2 for saturation region

ID If we plot the saturation ID versus VGS, we have a

+ quadratic (parabolic) curve.

VDS ID
Gate
–
+
VG
S – Source

VG
Vth S

Prof. C.K. Tse: T ransistor devices

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 Triode region
Triode region — like a quadratic (parabolic) function
ID
So, the equation is:
y = a x (2M – x)
K (VGS–Vth)2

ID = a VDS (2M – VDS)

Obviously, M = VGS – Vth , a = K,

VDS ID = K VDS [2 (VGS – Vth) – VDS]

M 2M
= VGS–Vth for triode region

Prof. C.K. Tse: T ransistor devices

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 n-channel MOSFET characteristic
Complete model summary:
triode region (quadratic in VDS)

ID = K VDS [2 (VGS – Vth) – VDS]

ID

saturation region (flat)

K (VGS–Vth)2
ID = K (VGS–Vth)2

VDS
VGS–Vth
Prof. C.K. Tse: T ransistor devices
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 Example (biasing in saturation)
10V Vth = 3V By using load line
K = 0.5 mAV–2
2kΩ
ID load line
5V
ID slope = –1/2k
ID = 0.5x22
= 2mA

5–3 = 2V 6V 10V VDS

Prof. C.K. Tse: T ransistor devices
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 Example (biasing in saturation)
10V Vth = 3V By analysis
K = 0.5 mAV–2
2kΩ
ID
ID
5V ID = 0.5x22
= 2mA

VDS = 10 – 2x2
= 6V
which is > 2
OKAY!

What happen if a 4.5kΩ is used? VDS

5–3 = 2V 6V
Prof. C.K. Tse: T ransistor devices
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 Example (biasing in triode)
10V Vth = 3V
K = 0.5 mAV–2
4.5kΩ ID ID
ID = 0.5x22 ?
5V = 2mA
VDS = 10 – 4.5x2
= 1V ID = 1.88mA
Oops!! VDS = 1.54V

So, it is in the triode region.

ID = K VDS [2 (VGS – Vth) – VDS] VDS
= 0.5 VDS (4 – VDS) 5–3 = 2V
= 0.5 (10–4.5 ID)(4–10+ 4.5 ID)
i.e., 10.125 ID2 – 35ID + 30 = 0
ID = 1.8845 mA or 1.5722 mA And 1.88mA gives VDS = 10–4.5x1.88=1.54V.
But 1.57mA gives VDS = 10–4.5x1.57=2.95V!!
Prof. C.K. Tse: T ransistor devices
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 Enhancement and depletion
MOSFET
What we have just studied is the enhancement ID
MOSFET.
Enhancement mode
Enhancement — the channel is originally not
conducting when gate voltage is 0, and we have to
apply a positive gate voltage (bigger than a threshold Depletion mode
Vth) to make it conduct (enhance it).

Depletion — In fact, we also have another kind of

MOSFET, in which the channel can conduct even when
gate voltage is not applied. Then, we need to apply
reverse gate voltage to cut it off. This is called VG
depletion MOSFET. Vth Vth S

NOTE THAT DUE TO A SEMICONDUCTOR DOPING PROPERTY,

For n-channel MOSFET, both enhancement and depletion
types can be made.
For p-channel MOSFET, only enhancement type can be made.

Prof. C.K. Tse: T ransistor devices

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 Junction FET (JFET)
Drain
Current can flow initially because plenty
of electrons are available in the channel.

Gate : Apply negative voltage to increase

Gate p n p the depletion width, so as to reduce the
current. When the gate voltage is
negative enough, current will stop.

Hence, this is a depletion device.

depletion region width depends on the

Source magnitude of the gate reverse bias

Prof. C.K. Tse: T ransistor devices

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 Junction FET (JFET)
Drain Drain

Gate p n p Gate p n p
–ve voltage more
applied to
reduce –ve voltage
current Channel
becomes
Source narrower Source

Prof. C.K. Tse: T ransistor devices

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 Pinch off in JFET
Drain
ID

Gate p n p Channel
more pinch off;
–ve voltage Current stops

Pinch-off
VG voltage
Vp Source
S
Vp
surely depletion type

Prof. C.K. Tse: T ransistor devices

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 n-channel JFET characteristics
Drain The characteristics are very similar to those of MOSFET. But,
now the threshold is a negative value, which is called the
ID pinch-off voltage Vp instead of threshold voltage.
+
VDS ID
Gate triode VGS=2V
+ –
VG saturation
– VGS=1V
S
Source (like “active” in BJT)
Pinch-off voltage of this VGS=0V
JFET is Vp = –2 V
VGS=–2V
VDS

Prof. C.K. Tse: T ransistor devices

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 n-channel JFET characteristics
Drain Everything is almost the same!!
ID +
triode region (quadratic in VDS)
VDS ID = K VDS [2 (VGS – Vp) – VDS]
Gate ID
+ –
VG
K (VGS–Vp)2
S – Source saturation region (flat)
Pinch-off voltage of this ID = K (VGS–Vp)2
JFET is Vp = –2 V

Be careful about sign!

VGS can be negative or positive, VDS
but Vp is negative. VGS–Vp
Prof. C.K. Tse: T ransistor devices
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 Example (biasing in saturation)
10V ID
ID = K (VGS–Vp )2
10kΩ = 0.2(2)2
= 0.8mA
ID +
VDS VDS = 10 – 10x0.8
= 2V
– just okay in saturation!

But if the resistor is VDS

Vp = –2 V
more than 10kΩ, it will
K = 0.2mA/V2 0–(–2)=2V
be in triode region!

Prof. C.K. Tse: T ransistor devices

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 Example (biasing in triode)
10V ID
ID = K (VGS–Vp )2
12kΩ = 0.2(2)2
= 0.8mA
ID +
VDS = 10 – 12x0.8
VDS = 0.4V
< 2V
So, it can’t be in saturation!
–

Recalculate ID: VDS

Vp = –2 V ID = K VDS [2 (VGS – Vp) – VDS]
K = 0.2mA/V2 = 0.2 (10–12 ID)[2x2–(10–12 ID)] 0–(–2)=2V
i.e., 28.8 ID2 – 37.4 ID + 12 = 0
ID = 0.7195mA or 0.5791mA
And, ID = 0.7195mA gives VDS = 1.366V ---okay
ID = 0.7195mA
But, ID = 0.5791mA gives VDS = 3.051V --- reject! VDS = 1.366V
Prof. C.K. Tse: T ransistor devices
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 Example (biasing in triode)
10V ID
ID = K (VGS–Vp )2
12kΩ = 0.2(2)2
= 0.8mA
ID +
Load line
VDS

–
Of course, you
Vp = –2 V
may also solve VDS
K = 0.2mA/V2 it by using 0–(–2)=2V 10V
load line.
ID = 0.7195mA
VDS = 1.366V
Prof. C.K. Tse: T ransistor devices
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 Important small-signal characteristic
Similar to BJT!!! Consider only the saturation region.
ID
If we change VGS in a small range, then
VGS=2V ID also changes in a range. The ratio of
the change in ID to the change in VGS is
called transconductance.
VGS=1.9V
DID
gm =
DVGS
VGS=1.8V
which is the slope of the curve
VGS=1.7V ID versus VGS , or analytically,
VDS
dID d
gm = = K (VGS - Vth ) 2
dVGS dVGS
= 2K (VGS - Vth )
= 2 K K (VGS - Vth )
= 2 K ID
Prof. C.K. Tse: T ransistor devices
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 Other FETs
So far, we have only talked about
1. n-channel MOSFET (enhancement type)
similar to npn BJT
2. n-channel JFET (depletion type)

Other FETs: enhancement

n-channel MOSFET
depletion
MOSFET
p-channel MOSFET enhancement
FET
n-channel JFET depletion
JFET
p-channel JFET depletion

Prof. C.K. Tse: T ransistor devices

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 p-channel FETs
Operation is almost the same as n-channel FETs.

Voltage polarity and current direction reversed.

BUT… for p-channel devices,

the carriers are holes (not electrons). So, mobility is lower

and minority carrier lifetime shorter.

Consequence: p-channel devices are usually POORER!

higher threshold voltage, higher resistance, and lower
current capability.

Prof. C.K. Tse: T ransistor devices

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