The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices.
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Thermally Matched Bias Diode Instant Thermal Bias Tracking Absolute Thermal Integrity High Safe Operating Area
Benefits
Eliminates Thermal Equilibrium Lag Time and Bias Trimming Superior Sound Quality Through Improved Dynamic Temperature
Response Significantly Improved Bias Stability Simplified Assembly Reduced Labor Costs Reduced Component Count High Reliability
MARKING DIAGRAM
SCHEMATIC
Applications
NJLxxxxD AYYWW
xxxx A YY WW
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoCase Symbol RqJC Max 0.625 Unit C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
Characteristic ESD Protection Flammability Rating Human Body Model Machine Model Value >8000 V > 400 V UL 94 V0 @ 0.125 in
ORDERING INFORMATION
Device NJL3281D NJL1302D Package TO264 TO264 Shipping 25 Units / Rail 25 Units / Rail
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NPN NJL3281D
VCE = 10 V 5V
h FE , DC CURRENT GAIN
TJ = 100C 100 25 C
25C
10
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
10
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NPN NJL3281D
1.5 A IB = 2 A 1A 0.5 A
1A 0.5 A
TJ = 25C IC/IB = 10
0.1
0.1
100
0.1
0.1
100
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There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
1000
1.0
10
100
PNP NJL1302D
10000 Cib 10000
NPN NJL3281D
Cib
C, CAPACITANCE (pF)
1000
Cob
C, CAPACITANCE (pF)
1000 Cob
10 TC = 175C
100C 25C
TJ = 100C
0.1 TJ = 25C
0.1
0.01
0.001 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS)
0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VF, INSTANTANEOUS VOLTAGE (VOLTS)
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T B
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 25.857 25.984 26.111 1.018 1.023 1.028 B 19.761 19.888 20.015 0.778 0.783 0.788 C 4.928 5.055 5.182 0.194 0.199 0.204 0.0480 BSC D 1.219 BSC E 2.032 2.108 2.184 0.0800 0.0830 0.0860 1.981 BSC 0.0780 BSC F 0.150 BSC G 3.81 BSC H 2.667 2.718 2.769 0.1050 0.1070 0.1090 0.0230 BSC J 0.584 BSC K 20.422 20.549 20.676 0.804 0.809 0.814 0.444 REF L 11.28 REF 7_ 0_ 7_ 0 _ M 0.180 REF N 4.57 REF P 2.259 2.386 2.513 0.0889 0.0939 0.0989 0.1370 BSC Q 3.480 BSC 0.100 REF R 2.54 REF S 0 _ 8_ 0_ 8_ 0.243 REF U 6.17 REF 0 _ 6_ 0_ 6_ W 0.0940 BSC Y 2.388 BSC STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. ANODE 5. CATHODE
P K
M F 5 PL
G D 5 PL 0.25 (0.010) W
M
J H T B
S
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NJL3281D/D
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