Advanced Power MOSFET

FEATURES
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V ! Lower RDS(ON) : 0.101! (Typ.)

IRL530A
BVDSS = 100 V RDS(on) = 0.12! ID = 14 A
TO-220

1 2 3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25%) Continuous Drain Current (TC=100%) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25%) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8) from case for 5-seconds
' & & ( &

Value 100 14 9.9 49 "20 261 14 6.2 6.5 62 0.41 - 55 to +175

Units V A A V mJ A mJ V/ns W W/%

% 300

Thermal Resistance
Symbol R$JC R$CS R$JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 2.41 -62.5 %/W Units

Rev. B1

IRL530A
Electrical Characteristics (TC=25% unless otherwise specified)
Symbol BVDSS .BV/.TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain()Miller)) Charge Min. Typ. Max. Units 100 -1.0 -----------------0.1 ------10.2 --2.0 100 -100 10 100 0.12 -#A * * V V/% V nA

N-CHANNEL POWER MOSFET

Test Condition VGS=0V,ID=250#A ID=250#A VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150% VGS=5V,ID=7A VDS=40V,ID=7A
, ,

See Fig 7

VDS=5V,ID=250#A

580 755 140 175 60 10 11 29 15 16.9 2.7 9.7 75 30 30 70 40 24 --nC ns pF

VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=14A, RG=6* See Fig 13 VDS=80V,VGS=5V, ID=14A See Fig 6 & Fig 12 , ,-

Source-Drain Diode Ratings and Characteristics

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
& ,

Min. Typ. Max. Units --------109 0.41 14 49 1.5 --A V ns #C

Test Condition Integral reverse pn-diode in the MOSFET TJ=25%,IS=14A,VGS=0V TJ=25%,IF=14A diF/dt=100A/#s
,

Notes ; & Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ' L=2mH, IAS=14A, VDD=25V, RG=27*, Starting TJ =25% ( ISD+14A, di/dt+350A/#s, VDD+BVDSS , Starting TJ =25% , Pulse Test : Pulse Width = 250#s, Duty Cycle + 2% - Essentially Independent of Operating Temperature

N-CHANNEL POWER MOSFET

Fig 1. Output Characteristics
2 1 0 VGS Top : 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V

IRL530A
Fig 2. Transfer Characteristics

ID , Drain Current [A]

ID , Drain Current [A]

1 1 0

1 1 0

1 7 5 oC
0 1 0

2 5 oC

0 1 0

@N o t e s: 1 .2 5 0 s P u l s eT e s t 2 .T 5 oC C =2
0 1 0 1 1 0

-5 5 oC
-1 1 0

@N o t e s: 1 .V GS = 0 V 2 .V 0V DS = 4 3 .2 5 0 s P u l s eT e s t 4 6 8 1 0

-1 1 0

VDS , Drain-Source Voltage [V]

VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

0 . 2 0

Fig 4. Source-Drain Diode Forward Voltage

IDR , Reverse Drain Current [A]

RDS(on) , [ ] Drain-Source On-Resistance

0 . 1 5

V GS = 5 V

1 1 0

0 . 1 0

V 0V GS = 1 0 . 0 5 @N o t e:T 5 oC J =2 0 . 0 0 0 1 5 3 0 4 5 6 0

0 1 0

1 7 5 oC 2 5 oC 1 0
-1

@N o t e s: 1 .V GS = 0 V u l s eT e s t 2 .2 5 0 s P 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 2 . 2

0 . 4

0 . 6

0 . 8

ID , Drain Current [A]

VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage

1 0 0 0 C h o r t e d) iss= C gs+ C gd ( C ds= s C oss= C ds+ C gd C rss= C gd 6

Fig 6. Gate Charge vs. Gate-Source Voltage

VGS , Gate-Source Voltage [V]

8 0 0

C iss

V 0V DS = 2 V 0V DS = 5 V 0V DS = 8 4

Capacitance [pF]

6 0 0 C oss 4 0 0 C rss 2 0 0 @N o t e s: 1 .V GS = 0 V 2 .f=1M H z

@N o t e s:I 4A D =1 0 0 3 6 9 1 2 1 5 1 8

00 1 0

1 1 0

VDS , Drain-Source Voltage [V]

QG , Total Gate Charge [nC]

IRL530A
Fig 7. Breakdown Voltage vs. Temperature
1 . 2 3 . 0

N-CHANNEL POWER MOSFET

Fig 8. On-Resistance vs. Temperature

Drain-Source Breakdown Voltage

1 . 1

RDS(on) , (Normalized) Drain-Source On-Resistance

2 . 5

BVDSS , (Normalized)

2 . 0

1 . 0

1 . 5

1 . 0 @N o t e s: 1 .V GS = 5 V 2 .I D =7A 5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 2 0 0

0 . 9

@N o t e s: 1 .V =0V
GS D

0 . 5

2 .I =2 5 0 A 0 . 8 7 5 5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5
o

1 5 0

1 7 5

2 0 0

0 . 0 7 5

TJ , Junction Temperature [ C]

TJ , Junction Temperature [oC]

Fig 9. Max. Safe Operating Area

O p e r a t i o ni nT h i sA r e a i sL i m i t e db yR

Fig 10. Max. Drain Current vs. Case Temperature

1 5

2 1 0

ID , Drain Current [A]

ID , Drain Current [A]

2 1 0

DS(on)

1 2

1 0 0 s 1m s
1 1 0

1 0m s D C

1 0

@N o t e s: 1 .T =2 5 oC
C J

7 5 oC 2 .T =1 3 .S i n g l eP u l s e
-1 1 0 0 1 0 1 1 0

0 2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

1 7 5

VDS , Drain-Source Voltage [V]

Tc , Case Temperature [oC]

Fig 11. Thermal Response

Thermal Response

100

D=0.5 @ Notes : 1. Z J C (t)=2.41

0.2 0.1 0.05

C/W Max.

2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z

PDM t1
JC

(t)

Z (t) ,

10- 1

0.02 0.01 single pulse

JC

t2

10- 5

10- 4

10- 3

10- 2

10- 1

100

101

t 1 , Square Wave Pulse Duration

[sec]

N-CHANNEL POWER MOSFET

Fig 12. Gate Charge Test Circuit & Waveform

IRL530A

* Current Regulator
50K! 12V 200nF 300nF

Same Type as DUT

VGS Qg
10V

VDS VGS DUT

3mA

Qgs

Qgd

R1
Current Sampling (IG) Resistor

R2
Current Sampling (ID) Resistor

Charge

Fig 13. Resistive Switching Test Circuit & Waveforms

RL Vout Vin RG DUT Vin 10V

td(on) t on tr td(off) t off tf 10%

Vout VDD
( 0.5 rated VDS )

90%

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

LL VDS
Vary tp to obtain required peak ID

BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp

ID

RG DUT 5V
tp

ID (t) VDS (t) Time

IRL530A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

N-CHANNEL POWER MOSFET

DUT

+ VDS --

IS L Driver RG VGS
Same Type as DUT

VGS

VDD

dv/dt controlled by )RG) IS controlled by Duty Factor )D)

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

Vf

VDD

Body Diode Forward Voltage Drop

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First Production

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Full Production

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Rev. H7