Simultaneous Optimization of Doping Profile and Ge-Dose in Base in SiGe HBTs

Gagan Khanduri Brishbhan Panwar

Centre for Applied Research in Electronics Centre for Applied Research in Electronics
Indian Institute of Technology Delhi Indian Institute of Technology Delhi
Hauz Khas, New Delhi-1 10016, INDIA Hauz Khas, New Delhi-110016, INDIA
gagan_iitd@hotmail.com bspanwar@care.iitd.ernet.in

Abstract

This work presents an approach to optimize the base
doping and Ge-dose inside the base of SiGe HBTs using the
fixed point Iterative methodology and includes the effect of
minority carrier velocity saturation on total base transit
time for SiGe HBTs. It is shown that shifted-Ge approach
and linear Ge-profile in base can lead to simultaneous
optimization of Ge-dose and base dopant distribution for
minimum base transit time.

1. Introduction

The base transit time (t
B
) is the most significant
parameter related to the speed of bipolar transistors, as it is
often the single largest contributor to the total delay time.
The base transit time can be significantly reduced by letting
the minority charges move subject to an additional electric
field, known as drift-field inside base [1] by tailoring the
distribution of dopants in the base region [2-3]. Similarly,
the Ge-induced band gap grading in SiGe HBTs also gives
rise to a drift field and reduces the base transit time. It has
been reported that the triangular Ge profiles are best suited
to achieve the minimum base transit time in SiGe HBTs [4-
6]. However, no literature was available on simultaneous
optimization of Ge-dose and base doping profile in SiGe
HBTs till recently, when it is shown that a geometric
programming (GP) approach can achieve the same [3].
However, the procedure involves a very complex and
special type of mathematical optimization problem and
requires a dedicated tool like MOSEK GP solver [7]. In
addition, the quantitative aspect of results in [3] is
ambiguous as it neglects the condition of 0 meV bandgap
narrowing due to heavy doping for base doping below 10
17

cm
-3
. In the present paper, a simple iterative approach is
employed to arrive at an optimized base doping profile,
while taking a triangular Ge profile as the basis of
minimum transit time in SiGe HBTs. The work also
presents the effect of inclusion of minority carrier velocity
saturation on base transit time in SiGe HBTs. The paper
also includes the shifted-Ge profile methodology in the
iterative approach and shows that it leads to simultaneous
optimization of Ge-dose with optimized base doping profile
to achieve minimum base transit time in SiGe HBTs.




2. Theory and Methodology

In the iterative scheme, the quasineutral base is divided
into M sections of equal length, and base doping (N
B
) is
approximated as a piecewise constant function across these
M sections. The discretised base transit time expression can
be written as [2]:


= =
=
M
m l ieBl nBl
Bl
M
m Bm
ieBm B
B
n D
N
N
n
M
W
t
2
1
2
2
2
(1)

where, W
B
is the base width and N
Bl
, n
ieBl
and D
nBl
are the
base doping, intrinsic carrier concentration and electron
diffusion coefficient in the l
th
section.
An optimized doping profile could be obtained using an
iterative scheme for N
Bm(k+1)
, i.e. new value for hole
concentration at section m for the (k+1)
th
iteration [2]:

( )
( )
( )
( )
42 . 1 / 1
1
1
1
42 . 1
1
1
42 . 0
42 . 1
1
42 . 0
1
|
|
|
|
|
.
|

\
|
+
=

=
+ =
+ m
l k Bl
k Bm
M
m l
k Bl
k Bm
N
N
N
N
(2)

An identical methodology is used in present work to
optimize base-doping profiles in SiGe HBTs. The presented
scheme incorporates the modifications related with Ge
induced bandgap narrowing and strain enhanced mobility
for intrinsic carrier concentration and carriers diffusivity
coefficients, respectively in the iteration algorithm.
Assuming a triangular Ge profile in base as best option to
achieve the minimum base transit time in SiGe HBTs [4-6],
the resultant effective intrinsic-carrier concentration in the
SiGe base is given by:

|
|
.
|

\
|
(

|
|
.
|

\
|
=
B
SiGe G gB
i SiGe ieB
W
x
kT
E
kT
E
n n
, 2 2
,
exp exp
(3)

where, accounts for the reduction in the effective density
of states with increasing Ge mole fraction (Ge%) and is a
constant. n
i
is the intrinsic carrier concentration in base. k
is Boltzmanns constant and T is the temperature. E
gB
is
the bandgap narrowing due to heavy doping in base.
Parameter x is the location inside base. The total bandgap
1-4244-1029-0/07/$25.00 2007 IEEE. 579
narrowing due to the grading of the Ge across the neutral
base is given as E
G,SiGe
(=E
G(BC)
- E
G(BE)
), where E
G(BE)

and E
G(BC)
are the Ge induced reduction in the bandgap of
SiGe base at emitter-base and collector-base edge of the
quasi-neutral base. The total bandgap narrowing E
G,SiGe
is
a function of the total Ge-slope (Ge) across SiGe base [5]:

( ) ' 688
,
Ge E
SiGe G
= meV (4)

Similarly, the carrier diffusion coefficient D
nB
in SiGe
HBT with linear-Ge profile in base is modified as [3]:


|
|
.
|

\
|
+ =
B
SiGe
nB SiGe nB
W
x Ge K
D D
'
1
,
(5)
where, K
SiGe
=3.

A fixed-point iterative scheme will converge if and only
if the iteration function (Eq. 2) is differentiable in the
interval of interest, and the absolute value of its derivative
is less than unity [2]. As the present optimization algorithm
conserves the basic iteration function of [2] and modifies
only the effective intrinsic-carrier concentration and carrier
diffusion coefficient in the SiGe base, the convergence
criteria remains valid. Owing to this convergence property,
it gives the global minimum for base transit time within
reasonable iteration time provided proper boundary
conditions are used. This has been confirmed by
consistency of results reported in [2] and [3]. However, it
must also be pointed out that using this iterative
methodology is not a necessary condition, but a sufficient
one in present case and its use gives the fast and efficient
iteration solutions due to its convergence property.
For a particular linear Ge ramp, the values of intrinsic
carrier concentration and carrier diffusion coefficient from
(3) and (5) are substituted in transit time calculations given
by (1), for every optimized dopant distribution profile. The
optimization algorithm calculates the global minimum
value of transit time for a particular linear-Ge profile and
gives the corresponding optimized base doping profile. The
boundary conditions on base doping profiles are kept such
that the base doping profile is never allowed to be greater
than the doping at the emitter edge of the base, or less than
the doping at the collector edge. For homojunction
transistors, peak base doping at emitter-base junction must
not be greater than 1 10
19
cm
-3
to prevent emitter-base
tunneling current [8]. However, there is no such limit on
HBTs, as HBT base can have a higher doping than emitter
and for a practical SiGe HBT, the constraints need to be
accordingly modified to fulfill the requirement of
maximum base sheet resistance. In the present work, peak
base doping N
Bmax
of 1 10
19
cm
-3
at emitter edge of base
and a minimum base doping N
Bmin
of 2 10
17
cm
-3
at
collector edge of base has been chosen to include the heavy
doping induced band gap narrowing effect in the entire base
region as in [2]. A neutral base width of 0.1 micron is
chosen.

3. Base Dopant Optimization for Fixed Ge-
dose, Varying Ge-ramp

Figure 1 shows the various Ge profile considered in the
analysis. A fixed Ge-dose equivalent to uniform 12.5% Ge
inside the base of SiGe HBT is considered for analysis,
which keeps a stable strained SiGe base [4]. The Fixed Ge-
dose is then divided inside base in trapezoidal profile
manner, where a linear Ge ramp having 0% Ge at emitter-
base junction and 25% Ge at base-collector junction is at
one extreme and a uniform box type 12.5% Ge profile
inside base is at other extreme. The in-between cases
having 2% Ge, 5% Ge, 8% Ge and 10% Ge at emitter-base
junction and a linear ramp with 21% Ge, 15% Ge, 9% Ge
and 5% Ge-slope across W
B
, respectively, are also being
considered.


















Figure 1. Different Ge profiles used for analyzing optimum
base dopant distribution for minimum transit time. All
profiles have fixed Ge-dose equivalent to uniform 12.5%
Ge in base, while varying the Ge slope.

The corresponding optimized base doping profiles
obtained using our methodology along with respective base
transit time is shown in Fig. 2. The box Ge profile with 0%
Ge slope and uniform 12.5% Ge inside base gives the base
transit time of 2.75659 psec. A continuous fall in base
transit time with transit time of 1.81833 psec, 1.3635 psec,
0.942855 psec, 0.6958 psec, and 0.58553 psec has been
found for the Ge slope of 5% Ge, 9% Ge, 15% Ge, 21% Ge
and 25% Ge.






0
5
10
15
20
25
0 0.02 0.04 0.06 0.08 0.1
Distance, (m)
G
e

C
o
n
c
e
n
t
r
a
t
i
o
n
0% Ge slope
5% Ge slope
9% Ge slope
15% Ge slope
21% Ge slope
25% Ge slope
0
5
10
15
20
25
0 0.02 0.04 0.06 0.08 0.1
Distance, (m)
G
e

C
o
n
c
e
n
t
r
a
t
i
o
n
0% Ge slope
5% Ge slope
9% Ge slope
15% Ge slope
21% Ge slope
25% Ge slope
580















Figure 2. Optimized base doping profiles and
corresponding base transit times for different linear Ge-
profiles.

4. Shifted-Ge Linear Profiles for Optimization
of Ge-dose

It can also be noted from Figure 2 that for 21% Ge slope
and 25% Ge slope, the optimized base profile is identical,
although the base transit time reduces with increasing Ge
ramp. This is a limitation of the method adopted in present
iterative approach where the allowable Ge profiles are
constrained to be linear in shape.
Nevertheless, an approach without these two constraints
(using geometric programming [3]) also show a similar
trend, as the Ge fixed dose is increased while maximum Ge
slope is kept constant. Moreover, as a validation of our
assumption of linear Ge-ramp as optimum Ge profile, the
simultaneously optimized Ge profile as in [3] also
resembles the linear profile, although a bit shifted from the
origin for fixed maximum Ge slope and varying Ge-doses.
In SiGe HBT devices, the best use of a fixed Ge-dose is
achieved using a trapezoidal or shifted-Ge profile (box-
triangular Ge profile) [5]. For a fixed Ge-dose, the
reduction in base transit time in a shifted-Ge profile is
achieved by increasing the maximum Ge-slope inside base
while using the Ge-component surplus from the shifted-Ge
portion. We have investigated the effect of shifted-Ge
triangular profiles for optimized base dopant distributions
for a fixed Ge-dose equivalent to uniform 12.5% Ge in
base. Fig. 3 shows the base transit time as a function of Ge
shift-distance X
G
inside base, for optimized base dopant
distributions with shifted-Ge profiles.
For present constraints, a Ge-shift limited to approx.
17.4% of total base width gives the minimum base transit
time of about 0.502428 psec in comparison to 0.58553 psec
for a linear Ge ramp across total base width W
B
as shown in
Fig. 2 (for 25% Ge-slope). This trend is identical to as in
[3], where a Ge profile shifted by about 18% from emitter-
base edge is shown to provide the minimum base-transit for
a fixed Ge-dose equivalent to uniform 11% Ge in base.
This additional reduction in transit time can be traded-off to
increase the Ge content at emitter-base junction, which can
maximize the ratio of current gain and base transit time ( /
t
B
).
However, it must be pointed out that the results shown in
Fig. 3 lack the effect of minority carrier velocity saturation
on total base transit time calculations. Nevertheless, this
analysis successfully shows the advantage of shifted-Ge
profile in base and it is also later used for comparison
purpose to show the importance of inclusion of velocity
saturation in total base transit time calculations.

0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 200 400 600
Shift-distance,
G
(x10
-4
m)
B
a
s
e

t
r
a
n
s
i
t

t
i
m
e
,

t
B

(
p
s
e
c
)
Figure 3. Base transit time as a function of optimized Ge-
shift-distance X
G
inside base, for a fixed Ge-dose equivalent
to uniform 12.5% Ge in base.

5. Effect of Minority Carrier Velocity
Saturation on Base Transit Time

As the base width is lowered in high frequency bipolar
transistors, the minority carrier electrons can attain
saturation velocity inside the base-collector depletion
region, and as a consequence minority carrier concentration
in the base increases. The total base transit time including
the effect of velocity saturation can be modified from (1)
as:

( )
( )
(

+
=

=
= =
M
m Bm
ieBm
B ieB
B B
s
B
M
m l
ieBl nBl
Bl
M
m Bm
ieBm B
B
N
n
W n
W N
v M
W
n D
N
N
n
M
W
t
1
2
2 1
1
2
1
2
2
2
1
(6)
where, v
s
is saturated velocity of minority electrons in p-
type base (10
7
cm/sec).
1E+17
1E+18
1E+19
0 100 200 300 400
Distance, (x 10
-4
m)
B
a
s
e

d
o
p
i
n
g
,

N
B

(
c
m
-
3
)
0% Ge slope, t
B
=2.75659 psec
5% Ge slope, t
B
=1.81833 psec
9% Ge slope, t
B
=1.3635 psec
15% Ge slope,
t
B
=0.942855 psec
21% Ge slope ,
t
B
=0.6958 psec
25% Ge slope , t
B
=0.58553 psec
1E+17
1E+18
1E+19
0 100 200 300 400
Distance, (x 10
-4
m)
B
a
s
e

d
o
p
i
n
g
,

N
B

(
c
m
-
3
)
0% Ge slope, t
B
=2.75659 psec
5% Ge slope, t
B
=1.81833 psec
9% Ge slope, t
B
=1.3635 psec
15% Ge slope,
t
B
=0.942855 psec
21% Ge slope ,
t
B
=0.6958 psec
25% Ge slope , t
B
=0.58553 psec
581
tB = 0.0042G
+ 0.3604
R
2
= 0.9886
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 100 200 300 400 500 600
Shift-distance,
G
(x 10
-4
m)
B
a
s
e

t
r
a
n
s
i
t

t
i
m
e
,

t
B

(
p
s
e
c
)
2.5 % Ge
5.0 % Ge
7.5 % Ge
12.5 % Ge
tB = 0.0042G
+ 0.3604
R
2
= 0.9886
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 100 200 300 400 500 600
Shift-distance,
G
(x 10
-4
m)
B
a
s
e

t
r
a
n
s
i
t

t
i
m
e
,

t
B

(
p
s
e
c
)
2.5 % Ge
5.0 % Ge
7.5 % Ge
12.5 % Ge
1E+17
1E+18
1E+19
0 100 200 300 400
Distance, (x 10
-4
m)
O
p
t
i
m
i
z
e
d

b
a
s
e

d
o
p
i
n
g
,

N
B

(
c
m
-
3
)
5% Ge slope
t
B
=2.33849 psec
10% Ge slope
t
B
=1.61888 psec
15% Ge slope
t
B
=1.18802 psec
1E+17
1E+18
1E+19
0 100 200 300 400
Distance, (x 10
-4
m)
O
p
t
i
m
i
z
e
d

b
a
s
e

d
o
p
i
n
g
,

N
B

(
c
m
-
3
)
5% Ge slope
t
B
=2.33849 psec
10% Ge slope
t
B
=1.61888 psec
15% Ge slope
t
B
=1.18802 psec
Considering the identical constraints of N
Bmax
of 1 10
19

cm
-3
and N
Bmin
of 2 10
17
cm
-3
, the optimal doping profile
including velocity saturation effects in base is found to be
slightly different than the optimal doping profiles obtained
without velocity saturation. Fig. 4 shows the optimized
base doping profile for 5%, 10% and 15% Ge-slope across
base, with corresponding increased base transit time values
of 2.33849 psec, 1.61888 psec, 1.18802 psec in comparison
with the transit time values of 1.81833 psec, 1.27474 psec,
0.942855 psec, when velocity saturation effect is not
included. The analysis shows a tendency of decreasing
velocity saturation effect on total base transit time as the
Ge-slope across base is increased.


















Figure 4. Optimized base doping profiles with-and-without
including the minority carrier velocity saturation effect
(VSE).


6. Shifted-Ge Profile Including Velocity
Saturation Effect

Figure 5 shows the plot of reduced base transit time as a
function of shift in Ge-profile from emitter-base junction
for different total Ge-dose, with the effect of velocity
saturation of minority electrons in base-collector depletion
region included. For a fixed-Ge dose equivalent to uniform
2.5%, 5%, 7.5% and 12.5% Ge across base width,
minimum base transit time is achieved for approx. 0.40W
B
,
0.229W
B
, 0.173W
B
, and 0.089W
B
Ge-shift from emitter-
base junction, respectively. These results are consistent in
trend with the solutions found using geometric
programming as in [3]. The almost linear property of the t
B

curve shown in Fig. 5 (t
B
= 0.0042
G
+ 0.3604) is due to
the fact that only linear Ge-profiles are considered and Ge-
induced band gap narrowing at any location inside base is
directly proportional to the Ge-concentration at that point.
Correspondingly, the reduced base transit time are found to
be 1.99858 psec, 1.40557 psec, 1.06648 psec and 0.697238
psec for respective fixed Ge-doses, showing a decrease in
base transit time by approx. 14.53 %, 13.17 %, 10.2 % and
5.3 % in comparison with the transit time value obtained
for a linear Ge-profile across total base width, for an
identical Ge-dose.

















Figure 5. Minimum base transit time as a function of shift
in Ge-profile for different equivalent uniform-Ge-dose. R is
the correlation coefficient.

Comparing the results for a fixed-Ge dose equivalent to
uniform 12.5% Ge across base shown in Fig. 5 with the
results illustrated in Fig. 3 brings out two important facts;
first, the minimum base transit time increases with
inclusion of velocity saturation effects, and secondly, the
optimum shift-distance also decreases with inclusion of
velocity saturation effects in base transit time calculations.
As an offshoot, it has been noticed that the inclusion of
velocity saturation effect changes the optimized base
doping profile towards a higher base Gummal number. This
is an advantage as it provides the flexibility to reduce base
resistance and increase maximum oscillation frequency f
max
.
An important point about the plot shown in Fig. 5 is its
linearity which makes it possible to use it for getting an
idea about the resultant minimum base transit time while
simultaneously optimizing the base profile and Ge-profile
in SiGe base of SiGe HBT. For e.g., given a fixed base
width, total Ge dose allowed inside the base is fixed due to
critical thickness limit criteria [4]. For a fixed Ge-dose, the
amount of shift in linear Ge profile needed to achieve the
minimum base transit time can be calculated using Fig. 5.
The constraints used in the present work of a fixed Ge-
dose and varying Ge slope are more practical and intuitive
for SiGe base design in SiGe HBTs, than the constraints of
fixed peak Ge% and varying Ge-dose as in [3]. Moreover,
an additional advantage of iterative approach used in this
work is its less complex mathematics while it can be
implemented using any high-level computer programming
language. In contrast, a GP method involves complex
mathematics and dedicated GP solver tools. Therefore,
582
iterative methodology presented here can be readily used as
a starting guideline to optimize base doping and Ge-profile
in practical SiGe HBT design. Nevertheless, a complete
simulation solution must consider additional constraints
such as maximum base sheet resistance constraint,
minimum current gain constraint etc., and can be found
using dedicated numerical simulators [9].

7. Conclusions

In this paper, base doping profile optimization is done for
linear Ge profile in base to minimize the base transit time.
Further, velocity saturation effect is included in total base
transit time calculations. The work also gives a guideline to
simultaneously optimize Ge-profile and base doping for
minimum base transit time, using shifted-Ge method for a
fixed Ge dose in SiGe HBTs.

References

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transport through a bipolar transistor with a nonuniform energy
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[2] M. Jagadesh Kumar and Vijay S. Patri, On the iterative
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[3] Siddharth Joshi, Stephen Boyd, and Robert W. Dutton,
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[4] D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. Crabbe, J.
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[5] Vijay S. Patri and M. Jagadesh Kumar, Profile design
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[6] T.-C. Lu and J. B. Kuo, A closed-form analytic forward
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[7] MOSEK ApS, Optimization Software, E. Andersen and K.
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[8] .K. Suzuki, Optimum base doping profile for minimum base
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[9] Gagan Khanduri and Brishbhan Panwar, Study of base
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