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DATA SHEET

SILICON TRANSISTOR ARRAY

PA1436A

NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE

DESCRIPTION
The PA1436A is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.
26.8 MAX. 4.0

PACKAGE DIMENSION (in millimeters)

FEATURES

Easy mount by 0.1 inch of terminal interval. High hFE for Darlington Transistor. High Speed Switching. C-E Reverce Diode built in.

10

2.54

ORDERING INFORMATION
Part Number Package 10 Pin SIP Quality Grade Standard

1.4

0.6 0.2

1.4 0.5 0.2

PA1436AH

1 2 3 4 5 6 7 8 910

CONNECTION DIAGRAM Please refer to Quality grade on NEC Semiconductor Device (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2 1 4 6 8 10 3 5 7 9

ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)


Collector to Base Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation (Ta = 25 C) Total Power Dissipation (Tc = 25 C) Junction Temperature Storage Temperature ** 4 Circuits Tj Tstg 150 55 to +150 C C PT2** 28 W VCBO VEBO IC(DC) IC(pulse)* IB(DC) PT1** 150 100 8 3 5 0.3 3.5 V V V A/unit A/unit A/unit W
(B)

Collector to Emitter Voltage VCEO

(C)

R1

R2 (E)

PIN NO.
2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) .. 5 k R1 = .. 1.3 k R2 =

* PW 350 s, Duty Cycle 2 %

The information in this document is subject to change without notice.

Document No. IC-3482 (O.D. No. IC-8705) Date Published September 1994 P Printed in Japan

10 MIN.

2.5

1994

PA1436A
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
CHARACTERISTIC Collector Leakage Current Emitter Leakage Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICBO IEBO hFE1 hFE2 MIN. TYP. MAX. 1 5 UNIT TEST CONDITIONS VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 1.5 A VCE = 2 V, IC = 3 A IC = 1.5 A, IB = 1.5 mA IC = 1.5 A, IB = 1.5 mA IC = 1.5 A IB1 = IB2 = 3 mA . 50 V, RL = 33 VCC = . See test circuit

A
mA

* *

2000 1000 1 1.8 0.3 1.5 0.4

20000

VCE(sat) * VBE(sat) * ton tstg tf

1.5 2

V V

s s s

* PW 350 s, Duty Cycle 2 % /pulsed

SWITCHING TIME TEST CIRCUIT


RL = 33 VIN IB1 IB2 PW PW = 50 s Duty Cycle 2 % VBB = 5 V T.U.T. VCC = 50 V 90 % Collector Current Wave Form ton IC 10 % tstg tf IC Base Current Wave Form IB1 IB2

PA1436A
TYPICAL CHARACTERISTICS (Ta = 25 C)
DERATING CURVE OF SAFE OPERATING AREA 0.1 IC(pulse) MAX. TC = 25 C Single Pulse

SAFE OPERATING AREA

PW

dT - Percentage of Rated Current - %

100

IC(DC) MAX.50

80

IC - Collector Current - A

0.1

m 10 Di s m s Lim ssip ite atio n d

=1 m s

S/

bL

im

60

ite

Di ss ip at io n

S/b d ite Lim

Li

40

0.1

20

0.01 0 50 100 150 1 10 TC - Case Temperature - C

100

VCEO MAX.

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 NEC PA1436AH

m i te d

1000

VCE - Collector to Emitter Voltage - V

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

4 Circuits Operation

PT - Total Power Dissipation - W

PT - Total Power Dissipation - W

3 Circuits Operation 20 2 Circuits Operation 1 Circuit Operation 10

4 Circuits Operation 3 Circuits Operation

2 Circuits Operation 1 Circuit Operation

25

50

75

100

125

150

25

50

75

100

125

150

Ta - Ambient Temperature - C

TC - Case Temperature - C

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 3 VCE = 2.0 V Pulsed

400 A 30 0

50

200
150

A
A

IC - Collector Current - A

IC - Collector Current - A

120
2

IB = 100 A
1

VCE - Collector to Emitter Voltage - V

VBE - Base to Emitter Voltage - V

PA1436A
COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 10 VCE = 2.0 V Pulsed VCE(sat) - Collector Saturation Voltage - V IC/IB = 1000 Pulsed

DC CURRENT GAIN vs. COLLECTOR CURRENT 10000

hFE - DC Current Gain

1000

100 0.01

0.1

10

0.1

1 IC - Collector Current - A

10

IC - Collector Current - A

BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 10 IC/IB = 1000 Pulsed VBE(sat) - Base Saturation Voltage - V tf, tstg, ton - Switching Time - s 10

TURN ON TIME. STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT

tstg 1

tf ton

1 IC - Collector Current - A

10

0.1

1 IC - Collector Current - A

10

PA1436A
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134

PA1436A
[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc.
M4 92.6

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