EDC Lab Manuel

P.S.R.
ENGINEERING COLLEGE, SIVAKASI-626 140

DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING
YEAR: II
SEMESTER: III
ELECTRONIC DEVICES AND CIRCUITS LAB- EE37
LAB MANUAL
PREPARED BY KANNAN.M JEYANTHI.R HOD/EEE SENTHILKUMAR.C
P.S.R.Engineering College, Sivakasi
(EE37-Electronic Devices and Circuits Lab)
P.S.R ENGINEERING COLLEGE, SIVAKASI 626 140 DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EE 37 ELECTRONIC DEVICES AND CIRCUITS LABORATORY
LIST OF EXPERIMENTS FIRST CYCLE S. No. 1. 2. 3. 4. 5. 6. EXPERIMENT NAME Characteristics of PN Junction Diode Characteristics of Zener Diode Characteristics of CE Configuration Characteristics of CB Configuration Characteristics of Field Effect Transistor Characteristics of Uni Junction Transistor SECOND CYCLE 7. Characteristics of Silicon Controlled Rectifier (SCR) 8. 9. UJT relaxation oscillator Characteristics Photo diode 45 51 55 61 67 39 Page No. 9 15 19 25 31 35
10. Half Wave and Full Wave Rectifiers 11. Common Emitter amplifier 12. RC phase shift oscillator
Resistor values - the resistor colour code Resistance is measured in ohms. The symbol for ohm is an Colour Code omega . 1 is quite small so resistor values are often given in k and M . 1 k = 1000 1 M = 1000000 . Resistor values are normally shown using colored bands. Each colour represents a number as shown in the table.
. The Resistor Colour Black Brown Red Orange Yellow Green Blue

Number 0 1 2 3 4 5 6 7 8 9
Most resistors have 4 bands:
The first band gives the first digit. Violet The second band gives the second digit. Grey The third band indicates the number of zeros. The fourth band is used to shows the tolerance (precision) White of the resistor
This resistor has red (2), violet (7), yellow (4 zeros) and gold bands. So its value is 270000 = 270 k . On circuit diagrams the is usually omitted and the value is written 270K. Small value resistors (less than 10 ohm) The standard colour code cannot show values of less than 10 . To show these small values two special colours are used for the third band: gold which means 0.1 and silver which means 0.01. The first and second bands represent the digits as normal. For example: red, violet, gold bands represent 27 0.1 = 2.7 blue, green, silver bands represent 56 0.01 = 0.56 Tolerance of resistors (fourth band of colour code) The tolerance of a resistor is shown by the fourth band of the colour code. Tolerance is the precision of the resistor and it is given as a percentage. For example a 390 resistor with a tolerance of 10% will have a value within 10% of 390 , between 390 - 39 = 351 and 390 + 39 = 429 (39 is 10% of 390). A special colour code is used for the fourth band tolerance: silver 10%, gold 5%, red 2%, brown 1%. If no fourth band is shown the tolerance is 20%.
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STUDY OF CATHODE RAY OSCILLOSCOPE (CRO) The cathode ray oscilloscope is a type of most versatile electronic measuring test equipment available. It provides a visual presentation of any waveform applied to the input terminal. That means it allows signal voltages to be viewed, as a two-dimensional graph in the given span of time. The Y- axis of the graph represents voltage and X- axis represents time. We can measure following parameters (quantities) using the CRO: 1. DC or AC voltage (peak voltage, frequency, pulse width, 2. Time (t=1/f), 3. Phase relationship (phase difference), 4. Waveform calculation (Rise time, fall time, on time, off-time Distortion, delay time, etc.,) We can also measure non-electrical physical quantities like pressure, strain, temperature, acceleration, etc., by converting into electrical quantities using a transducer.
Major blocks:
1. Cathode ray tube (CRT) 2. Vertical amplifier 3. Horizontal amplifier 4. Sweep generator 5. Trigger circuit 6. Associated power supply.. 1. The cathode ray tube is the heart of the CRO providing visual display of an input signal waveform. The CRT is enclosed in an evacuated glass envelope to permit the electron beam to traverse in the tube easily. The main functional units of CRO are Electron gun assembly Deflection plate unit & Screen. 2. Vertical Amplifier amplifies the signal at its input prior to the signal being applied to the vertical deflection plates. It is the main factor in determining the bandwidth and sensitivity of an oscilloscope. Vertical sensitivity is a measure of how much the electron beam will be deflected for a specified input signal. On the front panel of the oscilloscope, one can see a knob attached to a
rotary switch labeled volts/division. The rotary switch is electrically connected to the input attenuation network. The setting of the rotary switch indicates what amplitude signal is required to deflect the beam vertically by one division.
3. Horizontal amplifier amplifies the signal at its input prior to the signal being applied to the horizontal deflection plates. Under normal mode of operation, the horizontal amplifier will amplify the sweep generator input. When the CRO is being used in the X-Y mode, the horizontal amplifier will amplify the signal applied to the horizontal input terminal. Although the vertical amplifier mush be able to faithfully reproduce low-amplitude and high frequency signal with fast rise-time, the horizontal amplifier is only required to provide a faithful reproduction of the sweep signal which has a relatively high amplitude and slow rise time. 4. Sweep generator and Trigger circuit (These two units) form the Signal Synchronization unit of the CRO. Sweep Generator develops a voltage at the horizontal deflection plate that increase linearly with time. 5. Associated Power Supply: The input signal may come from an external source when the trigger selector switch is set to EXT or from low amplitude AC voltage at line frequency. When set for INT (internal triggering), the trigger circuit receives its inputs from the vertical amplifier.
Major Blocks in a Practical CRT:

A CRO consists of a cathode ray tube (CRT) and additional control knobs. The main parts of a CRT are:
i. Electron gun assembly. ii. Deflection plate assembly. iii. Fluorescent screen. Electron Gun Assembly: Cathodes, intensity grid, focus grid, and accelerating anode together known as electron gun. The electron gun generates a sharp beam of electrons, which are accelerated to high velocity fired along the cathode ray tube. This focused beam of electrons strike the fluorescent screen with sufficient energy to cause a luminous spot (light) on the screen. Deflection plate assembly: This part consists of two plates in which one pair of plates is placed horizontally and other of plates is placed vertically. The signal under test is applied to vertical deflecting plates. The horizontal deflection plates are connected to a built-in ramp generator, which moves the luminous spot periodically in a horizontal direction from left to right over the screen. Horizontal and vertical deflecting plates control the path of the electron beam. An electric field between the first pair of plates deflects the electrons horizontally, and an electric field between the second pair deflects them vertically. If no deflecting fields are present, the electrons travel in a straight line from the hole in the accelerating anode to the center of the screen, where they produce a bright spot. In general-purpose oscilloscopes, amplifier circuits are needed to increase the input signal to the voltage levels required to operate the tube because the signals measured using CRO are typically small. There are amplifier sections for both vertical and horizontal deflection of the beam. These two deflection plates give stationary appearance to the waveform on the screen. CRO operates on voltage. Since the deflection of the electron beam is directly proportional to the deflecting voltage, the CRT may be used as a linear measuring device. The voltage being measured is applied to the vertical plates through an iterative network, whose propagation time corresponds to the velocity of electrons, thereby synchronizing the voltage applied to the vertical plate with the velocity of the beam. Synchronization of input signal: The sweep generator produces a saw tooth waveform, which is used to synchronize the applied voltage to obtain a stationary applied signal. This requires that the
time base be operated at a submultiples frequency of the signal under measurement. If synchronization is not done, the pattern is not stationary, but appears to drift across the screen in a random fashion. Internal synchronization: This trigger is obtained from the time base generator to synchronize the signal. External synchronization: An external trigger source can also be used to synchronize the signal being measured. Auto Triggering Mode: The time base used in this case in a selfoscillating condition, i.e., it gives an output even in the absence of any Y-input. The advantage of this mode is that the beam is visible on the screen under all conditions, including the zero input. When the input exceeds a certain magnitude then the internal free running oscillator locks on to the frequency. Control Grid Regulates the number of electrons that reach the anode and hence the brightness of the spot on the screen. The control grid, which has a negative potential, controls the electron flow from the cathode and thus controls the number of electron directed to the screen. A cathode containing an oxide coating is heated indirectly by a filament resulting in the release of electrons from the cathode surface. Once the electron passes the control grid, they are focused into a tight beam and accelerated to a higher velocity by focusing and accelerating anodes. The high velocity and well-defined electron beam then passed through two sets of deflection plates. An evacuated glass envelope with a phosphorescent screen which glows visibly when struck by electron beam OPERATION: The four main parts of the oscilloscope CRT are designed to create and direct an electron beam to a screen to form an image. The oscilloscope links to a circuit that directly connects to the vertical deflection plates while the horizontal plates have linearly increasing charge to form a plot of the circuit voltage over time. In an operating cycle, the heater gives electrons in the cathode enough energy to escape. The electrons are attracted to the accelerating anode and pulled through a control grid that regulates the number of electrons in the beam, a focusing anode that controls the width of 6
the beam, and the accelerating anode itself. The vertical and horizontal deflection plates create electric fields that bend the beam of electrons. The electrons finally hit the fluorescent screen, which absorbs the energy from the electron beam and emits it in the form of light to display an image at the end of the glass tube. PRACTICE PROCEDURE: 1. Switch on the CRO. Turn the AC-GND-DC to GND. Check if a horizontal trace appears after the CRO warms up. Set the trace centrally in position on the screen. 2. Become accustomed to the operation of the oscilloscope. Move the focus, intensity, and position controls to see the effects produced. MEASUREMENT OF FREQUENCY: 3. Connect the signal generator output to one vertical input of the CRO. 4. Set the function generator in sinusoidal mode and adjust the amplitude of the signal so that it just about fills the screen. 5. Set the signal generator dial at any particular frequency and move the dial until you have only a few complete cycles across the CRO face in the horizontal direction. 6. Measure the period T of the signal. To do so, measure (in divisions & subdivisions) the horizontal distance between two successive peaks and multiply this distance b button which is the scale of the time axis. Record your data. 7. This gives the period T of the AC signal; its frequency is then f = 1/T. MEASUREMENT OF VOLTAGE: 8. Use the volts/div selector to convert vertical readings on the oscilloscope into actual voltages. 9. In measuring the voltage, always measure the value from the center of the trace to its peak. This "peak voltage" is half the peakto-peak voltage, which is the full height of the trace on the CRO screen.
CIRCUIT DIAGRAM:
Forward Bias Condition
Reverse Bias Condition
Diode IN4001 A K +
(0 50mA) MC A (0-30V) +
Diode IN4001 K A
(0 500A) MC + A -
RPS
I k -
RPS
(0 30V) MC
I k
- (0-30V) (0 2V)MC
TABULATION:
Forward Bias Sl.No 1. 2. 3. 4. 5. 6. 7. Vf (V) If (mA)
Reverse Bias Sl.No Vr (V) Ir (A)
1. 2. 3. 4. 5. 6. 7.
1. CHARACTERISTICS OF PN JUNCTION DIODE AIM: To draw the voltage current characteristics of PN junction diode under forward and reverse bias condition and to determine cut in voltage, reverse saturation current and forward dynamic resistance. APPARATUS REQUIRED:
S.NO. NAME OF THE EQUIPMENT TYPE RANGE QUANTITY (NO.S)
1 2 3
Diode Resistor Voltmeter
IN 4001 1 k MC (0 2V) (0 30V)
1 1 One from each One from each 1 1 Required
4 5 6 7
Ammeter Regulated Power Supply Bread Board Connecting wires
MC
(0 50mA) (0 - 500A) (0 30V)
FORMULA USED: DC (or) Static Resistance, (Rf) = Vf / If AC (or) Dynamic Resistance, f = Vf / If Where,
Vf Change in Voltage in forward bias condition in Volts If
Resulting Change in current in forward condition in Amps
MODEL GRAPH:
V-I characteristics of PN junction diode

V Vs I
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THEORY: A PN junction diode conducts only in one direction. It is an example of unilateral element. The V-I characteristics of the diode are curve between voltage across the diode and current through the diode. When external voltage is zero, circuit is open and the potential barrier does not allow the current to flow. Therefore, the circuit current is zero. When P-type (Anode is connected to +ve terminal and N type (cathode) is connected to ve terminal of the supply voltage, is known as forward bias. The potential barrier is reduced, when diode is in the forward biased condition. At some forward voltage, the potential barrier altogether eliminated and current starts flowing through the diode and also in the circuit. The diode is said to be in ON state. The current increases with increasing forward voltage. When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected to the ve terminal of the supply voltage is known as reverse bias and the potential barrier across the junction increases. Therefore, the junction resistance becomes very high and a very small current (reverse saturation current) flows in the circuit. The diode is said to be in OFF state. The reverse bias current is due to minority charge carriers. An ideal PN junction Diode is a two terminal polarity sensitive device that has zero resistance (diode conducts) when it is forward biased and infinite resistance (diode doesnt conduct) when it is reverse biased. Due to this characteristic, the diode finds number of applications as 1. Rectifiers in DC power supply, 2. Switch in digital circuits, 3. Clamping, Clipping circuits network used in TV Receiver, 4. Demodulation (detector) circuits.
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PROCEDURE:
1. Identify the anode and cathode terminals of an IN4001 diode (or equivalent silicon diode such as BY126) and test it using a multimeter. Set up the circuit on breadboard as shown in figure. 2. Wire the circuit as shown in figure. By varying the input voltage the ammeter and voltmeter readings are noted down for forward bias condition. 3. Wire the circuit as shown in figure. By varying the input voltage the ammeter and voltmeter readings are noted down for reverse bias condition. 4. Plot all the readings curves on a single graph sheet.
RESULT: Thus the forward and reverse V-I characteristics of a diode were obtained and the characteristics curves were plotted.
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CIRCUIT DIAGRAM:
Forward Bias Condition
Reverse Bias Condition
IZ9.2 A K
(0 50mA)MC + A + K
IZ9.2 A +
(0 50mA)MC A -
RPS
1 k
RPS - (0 30V)
(0 10V) MC 1 k
- (0 30V) (0 2V) MC
TABULATION: FORWARD BIAS Sl.No 1. 2. 3. 4. 5. 6. 7. Vf (V) If (mA) REVERSE BIAS Sl.No 1. 2. 3. 4. 5. 6. 7. Vr (V) Ir(mA)
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2. CHARACTERISTICS OF ZENER DIODE AIM: To obtain the forward and reverse VI characteristics of a Zener diode and to plot the characteristics. APPARATUS REQUIRED:
1 2 3 4 5 6 7
Zener Diode Resistor Voltmeter Ammeter Regulated Power Supply Bread Board Connecting wires MC MC MC
9.2 V 1 k (0 2V) (0 10V) (0 50mA) (0 30V)
1 1 One from each 1 1 1 Required
THEORY: A zener diode is heavily doped p-n junction diode, specially made to operate in the break down region. A p-n junction diode normally does not conduct when reverse biased. But if the reverse bias is increased, at a particular voltage it starts conducting heavily. This voltage is called Break down Voltage. High current through the diode can permanently damage the device to avoid high current, In Zener diode the reverse breakdown occurs at low voltages, so the flow of heavy current can be avoided. Once the diode starts conducting it maintains almost constant voltage across the terminals whatever may be the current through it, i.e., it has very low dynamic resistance. It is used in voltage regulators.
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MODEL GRAPH:
V-I characteristics of Zener diode
V Vs I
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PROCEDURE:
1. Identify the anode and cathode terminals of the Zener diode. 2. Wire the circuit as shown in figure. By varying the input voltage in steps and the ammeter and voltmeter readings are noted down for forward bias condition. 3. Wire the circuit as shown in figure. By varying the input voltage in steps and the ammeter and voltmeter readings are noted down for reverse bias condition. 4. Plot all the readings on a single graph sheet.
RESULT: Thus the forward and reverse V-I characteristics of the Zener diode were obtained and the characteristics curves were plotted.
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CIRCUIT DIAGRAM:
TABULATION: Input Characteristics
VCE1 (V) = _____ Sl.No. 1. 2. 3. 4. 5. 6. 7. IB (A)
VCE2 (V) =_____ IB (A)
VBE (V)
VBE (V)
Output Characteristics IB1 (A) = ______ A Sl.No. 1. 2. 3. 4. 5. 6. 7. VCE (V) IC (mA) IB2 (A) =_____ A VCE (V) VCE (V) IB3 (A) =_____ A IC (mA) VCE (V)
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3. CHARACTERISTICS OF BIPOLAR JUNCTION TRANSISTOR (BJT) IN COMMAN EMITTER (CE) CONFIGURATION AIM: To obtain the input and output (V I) characteristics of a BJT in Common Emitter Configuration and to plot the characteristics. APPARATUS REQUIRED: S.NO. NAME OF THE EQUIPMENT 1 Bipolar Junction Transistor 2 3 4 5 6 7 Resistor Voltmeter Ammeter Regulated Power Supply Bread Board Connecting wires MC MC 1 k , 33 k (0 2V) (0 30V) (0 500A) (0 100mA) (0 30V) One from each One from each One from each 2 1 Required TYPE SL 100 RANGE QUANTITY (NO.S) 1
FORMULA USED: Input Impedance = VEB / IB Output Admittance = IC / VCE mho Current Gain = IC / IB Voltage Gain = VCE / VEB
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MODELGRAPH:
Input Characteristics: VBE Vs IB
Output Characteristics: VCE Vs IC
*** Note VCE1 < VCE2 < VCE3 Similarly IB1 < IB2 < IB3
BJT PIN DIAGRAM
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THEORY: A transistor is a three terminal device. The terminals are emitter, base, collector. In common emitter configuration, input voltage is applied between base and emitter terminals and output is taken across the collector and emitter terminals. Therefore the emitter terminal is common to both input and output. The input characteristics resemble that of a forward biased diode curve. This is expected since the Base-Emitter junction of the transistor is forward biased. As compared to CB arrangement IB increases less rapidly with VBE. Therefore input resistance of CE circuit is higher than that of CB circuit. The output characteristics are drawn between Ic and VCE at constant IB. the collector current varies with VCE unto few volts only. After this the collector current becomes almost constant, and independent of VCE. The value of VCE up to which the collector current changes with VCE is known as Knee voltage. The transistor always operated in the region above Knee voltage, I C is always constant and is approximately equal to IB.
PROCEDURE:
1. Identify the Emitter, Base and Collector terminals of the transistor given and set up the circuit on breadboard as shown in figure. 2. Wire the circuit as shown in figure. By keeping the output voltage (Collector Voltage) constant and varying the input voltage (Base Voltage) ammeter and voltmeter readings are noted down.
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3. Wire the circuit as shown in figure. 4. By keeping the input current (Base Current) constant and varying the output voltage (Collector Voltage) ammeter and voltmeter readings are noted down. 5. The above procedure shall be repeated for different output voltage and input current and readings can be taken. 6. VI characteristics curves were drawn.
RESULT: Thus the input and output (V-I) characteristics of a transistor were obtained and the characteristics curves were plotted.
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CIRCUIT DIAGRAM:
TABULATION: Input Characteristics
VCB 1(V) =_____ V Sl.No 1. 2. 3. 4. 5. 6. 7. VBE (V) IB (mA) VBE (V)
VCB2 (V) =______ (V) IB (mA)
Output Characteristics Sl.No IE1 (mA) = _____ mA VCB (V) 1. 2. 3. 4. 5. 6. 7. IC (mA) IE2 (mA) = ______ mA VCB (V) IC (mA) IE3 (mA)= _______ mA VCB (V) IC (mA)
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4. CHARACTERISTICS OF BIPOLAR JUNCTION TRANSISTOR (BJT) IN COMMAN BASE (CB) CONFIGURATION AIM: To obtain the input and output (V-I) characteristics of a BJT in Common Base Configuration and to plot the characteristics.
APPARATUS REQUIRED: S.NO. NAME OF THE EQUIPMENT 1 Bipolar Transistor 2 3 4 5 6 7 Resistor Voltmeter Ammeter Regulated Power Supply Bread Board Connecting wires MC MC MC 1 k (0 2V) (0 30V) (0 50mA) (0 30V) 2 1 1 2 2 1 Required Junction TYPE SL 100 RANGE QUANTITY (NO.S) 1
FORMULA USED: Input Impedance = VEB / IE Output Admittance = IC / VCB mho Current Gain = IC / IE Voltage Gain = VCB / VEB
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MODEL GRAPH:
Input characteristics:
VEB (V) Vs IB(mA)
output characteristics:
VcB (V) Vs Ic(mA)
BJT PIN DIAGRAM
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THEORY: Bipolar Junction Transistor (BJT) is a three-terminal
semiconductor device capable of amplifying an ac signal. The three terminals are called the emitter, the base, and the collector. The device is made up three layers of p-type and n-type semiconductor material. BJTs consist of a thin base layer (either P- or N-type) sandwiched between two layers of the opposite type material. Thus, BJTs are either NPN or PNP. They are somewhat like two
interconnected, back to- back diodes, with two diode junctions. In CB configuration, the base is common to both input (emitter) and output (collector). For normal operation, the E-B junction is forward biased and C-B junction is reverse biased. The input characteristics are plots of IE versus VBE at constant values of VCB. These characteristics will look like diode characteristics, particularly if the collector is shorted to the emitter and the emitter-base junction is forward biased. The output characteristics, often called the
collector characteristics, are plots of IC versus VCB at constant values of IE.
PROCEDURE:
1. Identify the Emitter, Base and Collector terminals of the transistor given and set up the circuit on breadboard as shown in figure. 2. Wire the circuit as shown in figure. By keeping the output voltage (Collector Voltage) constant and varying the input voltage (Emitter Voltage) ammeter and voltmeter readings are noted down.
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3. Wire the circuit as shown in figure. By keeping the input current (Emitter Current) constant and varying the output voltage (Collector Voltage) ammeter and voltmeter readings are noted down. 4. The above procedure shall be repeated for different output voltage and readings can be taken. 5. VI characteristics curves were drawn.
RESULT: Thus the input and output (V-I) characteristics of a transistor in CB configuration were obtained and the characteristics curves were plotted.
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CIRCUIT DIAGRAM:
TABULATION: Transfer Characteristics VDS1(V) =____ (V) Sl.No 1. 2. 3. 4. 5. 6. 7. Drain Characteristics VGS (V) ID (mA) VDS2(V) = _____ (V) VGS (V) ID (mA)
VGS1(V) =_____ V Sl.No 1. 2. 3. 4. 5. 6. 7. VDS (V) ID (mA)
VGS2(V) =_______ V VDS (V) ID (mA)
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5. CHARACTERISTICS OF FIELD EFFECT TRANSISTOR AIM: To obtain the Drain and Transfer (V-I) characteristics of FET and to plot the characteristics.
APPARATUS REQUIRED:
1 2 3 4 5 6 7
FET Resistor Voltmeter Ammeter Regulated Power Supply Bread Board Connecting wires
BFW10/11 1 k D.C D.C D.C (0 5V) (0 100V) (0 50mA) (0 30V)
THEORY: A FET is a three terminal device, having the characteristics of high input impedance and less noise, the Gate to Source junction of the FET s always reverse biased. In response to small applied voltage from drain to source, the n-type bar acts as sample resistor, and the drain current increases linearly with VDS. With increase in ID the ohmic voltage drop between the source and the channel region reverse biases the junction and the conducting position of the
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MODEL GRAPH:
Transfer Characteristics
VGS(V) Vs ID(mA)
Drain Characteristics
VDS(V) Vs ID(mA)
JFET PIN DIAGRAM
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channel begins to remain constant. The VDS at this instant is called pinch of voltage. If the gate to source voltage (VGS) is applied in the direction to provide additional reverse bias, the pinch off voltage ill is decreased.
PROCEDURE: 1. Identify the terminals of the FET given and set up the circuit on breadboard as shown in figure. 2. Wire the circuit as shown in figure. By keeping the Gate Source voltage constant and varying the Drain Source voltage, I D readings are noted down. 3. Wire the circuit as shown in figure. By keeping the Drain Source voltage constant and varying the Gate Source voltage, ID readings are noted down. 4. The above procedure was repeated and ammeter and voltmeter readings were noted. 5. VI characteristics curves were drawn.
RESULT: Thus the Drain and Transfer (V-I) characteristics of the FET were obtained and the characteristics curves were plotted.
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CIRCUIT DIAGRAM:
TABULATION:
VBB1 = Sl.No 1. 2. 3. 4. 5. 6. 7. VE (V) IE (mA) VE (V)
VBB2 = IE (mA)
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6. CHARACTERISTICS OF UNI JUNCTION TRANSISTOR AIM: To obtain the V-I characteristics of a UJT and to plot the characteristics. APPARATUS REQUIRED: QUANTITY S.NO. NAME OF THE EQUIPMENT 1 2 3 4 5 6 Uni Junction Transistor Voltmeter Ammeter Regulated Power Supply Bread Board Connecting wires TYPE 2N2646 MC MC (0 30V) (0 50mA) (0 30V) RANGE (NO.S) 1 2 1 1 1 Required
THEORY: A Uni-Junction Transistor (UJT) is an electronic
semiconductor device that has only one junction. The UJT UniJunction Transistor (UJT) has three terminals emitter (E) and two bases (B1 and B2). The base is formed by lightly doped n-type bar of silicon. The emitter is of p-type and it is heavily doped. The UJT, is a simple device that is essentially a bar of N type semiconductor material into which P type material has been diffused somewhere along its length. The UJT is biased with a positive voltage between the two bases. This causes a potential drop along the length of the device. When the emitter voltage is driven approximately one diode voltage above the voltage at the point where the P diffusion (emitter) is, current will begin to flow from the emitter into the
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UJT PIN DIAGRAM
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base region. Because the base region is very lightly doped, the additional current (actually charges in the base region) causes (conductivity modulation) which reduces the resistance of the portion of the base between the emitter junction and the B2 terminal. This reduction in resistance means that the emitter junction is more forward biased, and so even more current is injected. Overall, the effect is a negative resistance at the emitter terminal. This is what makes the UJT useful, especially in simple oscillator circuits.
PROCEDURE: 1. Identify the terminals of the transistor given and set up the circuit on breadboard as shown in figure. 2. Wire the circuit as shown in figure. By keeping the Base Base voltage (VBB) constant and varying the Emitter Voltage
ammeter readings are noted down. 3. The above procedure shall be repeated for different VBB and current readings can be taken. 4. VI characteristics curves were drawn.
RESULT: Thus the V-I characteristics of the UJT were obtained and the characteristics curves were plotted.
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CIRCUIT DIAGRAM:
TABULATION:
Sl.No 1. 2. 3. 4. 5. 6. 7.
Vf(V)
If(mA)
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7. CHARACTERISTICS OF SILICON CONTROLLED RECTIFIER (SCR) AIM: To obtain the Voltage - Current characteristics of Silicon Controlled Rectifier and to plot the characteristics.
APPARATUS REQUIRED:
1 2 3 4 5 6 7
SCR Resistor Voltmeter Ammeter Regulated Power Supply Bread Board Connecting wires
TYN616 1 k 10 k/10 W (0 300V) (0 100mA) (0 30V)
1 One from each 1 2 1 1 Required
D.C D.C
THEORY: A Silicon Controlled Rectifier (SCR) is 3 terminals consisting of four semiconductor layers forming a PNPN structure. It has three PN junctions namely J1, J2 and J3. There are three terminals called Anode, Cathode and the gate. The SCR resembles the diode electrically, since it conducts the current in one direction only, when forward biased. However the SCR is different from diode because it has an additional gate terminal. This gate is used to turn ON the device.
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MODEL GRAPH: V-I Characteristics of SCR
*** VBO Break Over Voltage IHO Holding Current IL Latching current IG Gate current
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When the anode is more positive with respect to the cathode, junctions J1&J3 are forward biased and the junctions J2 is reverse biased. Only a small leakage current flows through the device. The device is said to be in the forward blocking state or off state or cutoff state.
SCR Schematic Symbol
SCR Block Construction
When the anode to cathode voltage is increased to break over value, the junction J2 breaks down and device starts conducting (ON state) the anode current must be more than the value known as latching current in order to maintain the device in the ON state. Once SCR starts conducting, it behaves like a conducting diode and gate has no control over the device. The device can be turned off only by bringing the device in below a value known as holding current. The forward voltage drop across the device in the ON state is around one volt. When the cathode voltage is made positive with respect to the anode voltage junction J2 is forward biased and the junction J1 and J3 are reversed biased. The device will be in the reverse blocking state and only small leakage current flows through the device. The device can be turned on at forward voltage less than break over voltage by applying suitable gate current. 41
SCR PIN DIAGRAM
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The SCR can be used in motor speed control, phase control, lightdimming control, heater control, battery charger, inverters, static switchers, rectifier power supplies and relay control. PROCEDURE: 1. Identify the terminals of the SCR given and set up the circuit on breadboard as shown in figure. 2. Wire the circuit as shown in figure. By keeping the Gate voltage constant and varying the Anode and Cathode Voltage,
ammeter readings are noted down. 3. The above procedure shall be repeated for different Gate voltage and current readings can be taken. 4. VI characteristics curves were drawn.
RESULT: Thus the V-I characteristics of a SCR were obtained and the characteristics curves were plotted.
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CIRCUIT DIAGRAM:
UJT RELAXATION OSCILLATOR
TABULATION:
S.No.
Charging Time,
DisCharging Time,
tc(ms)
td(ms)
Amplitude,Vc(V)
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8. UJT RELAXATION OSCILLATOR AIM: To construct the UJT oscillator and obtain the characteristics. APPARATUS REQUIRED:
1 2 3 4 5 6
UJT Resistor Capacitor CRO Bread Board Connecting wires
2N2646 15 k 220 k, 33 0.1 F
1 One from each 1 1 1 Required
FORMULA USED: Charging time of capacitance, T = RC ln [(E - E0)/E - EC] E - Supply voltage E0- Initial capacitor voltage Ec-Capacitance voltage THEORY: The Relaxation UJT oscillator consists of UJT and a capacitor which is charged through a RE as the supply voltage VBB is switched ON. The voltage across the capacitor increases exponentially and when the capacitor voltage reach the peak point voltage Vp, the UJT starts conducting and the capacitor voltage is discharged rapidly through EB1 and R1. After the peak point voltage of UJT is reached, it provides negative resistance to the discharge path which is useful in the working of the relaxation oscillator. As the capacitor voltage reaches zero, the device then cuts off and capacitor CE starts to 45
MODEL GRAPH:
UJT PIN DIAGRAM
46
charge again. This cycle is repeated continuously generating a saw tooth waveform across the capacitor.The inclusion of external resistors R2 and R1 in series with B2 and B1 provides spike waveforms. When the UJT fires, the sudden charge of current through B1 causes drop across R1, which provides positive going spikes. Also, at the time of firing, fall of VEB1 causes I2 to increase rapidly which generates negative going spikes across R2. By
changing the values of capacitance CE or resistance RE, the frequency of the output waveform can be changed as desired, Since these values control the time constant RECE of the capacitor changing circuit. The frequency of oscillation can be obtained by assuming that the capacitor is initially uncharged. f= 1/T = 2.3 RE CE log 10 [1/(1- )] Where,
is intrinsic stand-off ratio
PROCEDURE: 1. Connections are given as per the circuit diagram. 2. Positive biasing voltage is given to the Emitter and Base-2 terminal. 3. The charging and discharging time of capacitor is observed from the output waveform of CRO. 4. Positive output waveform of B1 and B2 are obtained.
RESULT: Thus the UJT relaxation oscillator circuit was constructed and the output waveforms were noted. The corresponding graphs are drawn.
47
CIRCUIT DIAGRAM: Forward Bias Condition Reverse Bias Condition
TABULATION: Forward Bias Sl.No 1. 2. 3. 4. 5. 6. 7. V (V) I (mA) Reverse Bias Sl.No V (V) I (A) Dark Bright 1. 2. 3. 4. 5. 6. 7.
48
9. CHARACTERISTICS OF PHOTO DIODE AIM: To obtain the forward and reverse VI characteristics of a photo diode and to plot the characteristics.
APPARATUS REQUIRED:
1 2 3 4 5 6 7
Photo Diode Resistor Voltmeter Ammeter Regulated Power Supply Bread Board Connecting wires D.C D.C 1 k (0 2V) (0 30V) (0 50mA) (0 250A) (0 30V)
1 1 One from each One from each 1 1 Required
FORMULA USED: Variable resistance used, rR = VD / ID THEORY: A photo Diode is a two terminal PN junction device which operates in a reverse bias. It has small transparent window, which allows light to strike the PN junction. A photo diode differs from a rectifier diode in a sense that its reverse current increases with the light intensity at the PN junction. When there is no light incident the reverse current is almost negligible and is called the dark current. An increase in the amount of light energy produces an
49
MODEL GRAPH:
V Vs I
50
increase in the reverse current for a given value of reverse bias voltage. This device is a low noise, high speed and operates over a wide temperature range. The application for this photo diode includes remote control, light curtains, data transmission and measurement & control.
PROCEDURE: 1. Identify the terminals of the Photo Diode given and set up the circuit on breadboard as shown in figure. 2. Wire the circuit as shown in figure. By varying the input voltage, the ammeter and voltmeter readings are noted down for forward bias condition. 3. Wire the circuit as shown in figure. By varying the input voltage, the ammeter and voltmeter readings are noted
down for reverse bias condition 4. VI characteristics curves were drawn.
RESULT: Thus the forward and reverse V-I characteristics of a Photo Diode were obtained and the characteristics curves were plotted.
51
CIRCUIT DIAGRAM:
Full Wave Rectifier:

Step-down Transformer (12 0 12V) P D1 230 V, 50 Hz 1 Supply D3 N PY SY D4 1 k C CRO D2
TABULATION: Input voltage (Vm):________ Time in mS: _________

Without Filter Rectifier Vm (V) T (mS) With Filter (small value)_______ F Vm (V) VRipple T (mS) Charging Discharging With Filter( large value)_______ F Vm (V) VRipple T (mS) Charging Discharging
Half Wave Rectifier Full Wave Rectifier
52
10. HALF WAVE AND FULL WAVE RECTIFIER AIM: To construct half wave & full wave rectifier circuits using diodes & observe the input & output wave forms with & without filter.
APPARATUS REQUIRED:
1 2 3 4 5 6 7
Diode Resistor Capacitor Transformer CRO with Probe Bread Board Connecting wires
IN 4001 1 k 100 F,33 F Step-down 230 V / (12 0 12) V
THEORY:
HALF-WAVE RECTIFIER:
Figure shows a basic half-wave diode rectifier circuit. During the positive half-cycle of the input voltage, the diode is forwardbiased for all instantaneous voltages greater than the diode cutin voltage V. Current flowing through the diode during the positive half-cycle produces approximately a half sine wave of voltages across the load resistor, as shown in the Figure. To simplify our discussions, we will assume that the diode is ideal and that the
53
MODEL GRAPH:
Vin (V) Vm Input Voltage
0
Time
Vout (V)
Output of Half Wave Rectifier without filter
0 Time Vm
Output of Half Wave Rectifier with filter
VRipple 0 Time Vm 0 Time Vm

Output of Full Wave Rectifier with filter Output of Full Wave Rectifier without filter
0 Time
54
peak input voltage is always much larger than the V of the diode. Hence, we assume that the zero of the rectified voltage coincides with the zero of the input voltage. On the negative half-cycle of the input voltage, the diode is reverse-biased. Ignoring the reverse leakage current of the diode, the load current drops to zero, resulting in zero load voltage (output voltage), as shown in Figure. Thus, the diode circuit has rectified the input ac voltage, converting the ac voltage to a dc voltage.
FULL-WAVE RECTIFIER: Figure shows a full-wave bridge rectifier with a load resistor RL and an input sine wave derived from a transformer. During the positive half-cycle of the input voltage, diodes D2 and D3 are forward biased and diodes D1 and D4 are reverse biased. Therefore, terminal A is positive and terminal B is negative, as shown in Figure. During the negative half-cycle, diodes D1 and D4 conduct, and again terminal A is positive and terminal B is negative. Thus, on either half-cycle, the load voltage has the same polarity and the load current is in the same direction, no matter which pair of diodes is conducting. The full-wave rectified signal is shown in Figure, with the Vo being the output voltage. Since the area under the curve of the full-wave rectified signal is twice that of the half-wave rectified signal, the average or dc value of the full-wave rectified signal, Vdc, is twice that of the half-wave rectifier.
55
56
PROCEDURE: 1. Circuit connections were given as per the circuit diagram. 2. Input waveforms magnitude and frequency was measured with the help of CRO. 3. Supply is switched ON and the output waveform was obtained in the CRO. 4. Output waveforms magnitude and time period was
measured. 5. Graphs were plotted for Half wave and Full wave rectifier outputs.
RESULT: Thus the output of Half wave and Full wave rectifiers were obtained and the curves were plotted.
57
CIRCUIT DIAGRAM:
TABULATION:
Frequency, S.No
With CE Vo (V) Gain (dB)
f (Hz)
58
11. COMMON EMITTER AMPLIFIER AIM: To obtain the frequency response of Common Emitter amplifier.
APPARATUS REQUIRED:
1 2
Bipolar Transistor Resistors
Junction
BC107 47 k,10 k, 2.2 k,820 , 680 22 F, 10 F , 15 F
1 One from each One from each 1 1 (0 30V) 1 1 Required
Capacitors
4 5 6 7 8
AFO with probe CRO with probe Regulated Power Supply Bread Board Connecting wires
FORMULA USED:
Gain in dB = 20 log (Vo / Vi)
THEORY: The CE amplifier provides high gain &wide frequency response. The emitter lead is common to both input & output circuits and is grounded. The Emitter-Base circuit is forward
59
MODEL GRAPH:
60
biased. The collector current is controlled by the Base current rather than emitter current. The input signal is applied to base terminal of the transistor and amplifier output is taken across collector terminal. A very small change in base current produces a much larger change in collector current. When +VE half-cycle is fed to the input circuit, it opposes the forward bias of the circuit which causes the collector current to decrease, it decreases the voltage more VE. Thus when input cycle varies through a -VE half-cycle, increases the forward bias of the circuit, which causes the collector current to increases thus the output signal is common emitter amplifier is in out of phase with the input signal. The input AC signal is applied across the base-emitter terminals and the output signal is taken across the collector emitter terminals. The emitter base junction of a transistor is forward biased by the VBB supply. The collector base junction is reverse biased by the VCC supply. Each capacitor acts like a switch, The band width of the amplifier is calculated from the graph using the expression, 3 dB Bandwidth, BW=f2-f1 Where, f1 is lower cut-off frequency of CE amplifier, and f2i s upper cut-off frequency of CE amplifier which is open to a direct current but shorted to an alternating current. Because of this, a blocking capacitor blocks the direct current. This action isolates DC bias from an AC signal in the circuit. A common emitter amplifier has the following important characteristics Its input resistance is in the range of 1 k to 2 k, which is considered to be moderately low.
61
BJT PIN DIAGRAM
62
Its output resistance is about 50 k and is considered to be moderately large.
It produces very large power gain and is of the order of 10000 or so
It produces phase reversal of the input signal.
The common emitter amplifier is the most widely used amplifier of its large voltage and power gains. In addition to this, its input and output resistances are suitable for most of the applications.
PROCEDURE:
1 Identify the Emitter, Base and Collector terminals of the transistor given and set up the circuit on breadboard as shown in figure. 2 Wire the circuit as shown in figure. 3 Using AFO the sinusoidal input with constant magnitude is supplied 4 The frequency of the input increases gradually and the output is obtained. 5 Using a CRO the output waveform is obtained.
RESULT: Thus the Common Emitter amplifier circuit is constructed and the amplified input signal is obtained and the graph was plotted.
63
CIRCUIT DIAGRAM:
TABULATION:
Sl.No
Output in volts
Time, T (ms)
Frequency, f (Hz)
1.
Amplitude=_____V
Theoretical output frequency Practical output frequency
:-_________Hz :-_________Hz
64
12. RC PHASE SHIFT OSCILLATOR AIM: To design and set up an RC phase shift oscillator using BJT and to observe the sinusoidal output waveform.
APPARATUS REQUIRED:
1 2 3 3 4 5 6 7 8
Transistor Resistors Resistor Capacitors Capacitor CRO RPS Bread Board Connecting wires
BC547 47k, 10k,2.2k,680 4.7k 1F,22F 0.01 F
1
one from each
3
one from each
(0 30V)
1 1
Required
FORMULA USED: Output frequency, fo
1 2RC 6
THEORY:
An oscillator is an electronic circuit for generating an AC signal voltage with a DC supply as the only input requirement. The frequency of the generated signal is decided by the circuit elements used. An oscillator requires an amplifier, a frequency selective network and a positive feedback from the output to the input.
65
MODEL GRAPH:
BJT PIN DIAGRAM
66
The Barkhausen criterion for sustained oscillation is A = 1 where A is the gain of the amplifier and is the feedback factor (gain).The unity gain means signal is in phase. ( If the signal is 1800 out of phase and gain will be -1). RC-Phase shift Oscillator has a CE amplifier followed by three sections of RC phase shift feed-back Networks. The output of the last stage is return to the input of the amplifier. The values of R and C are chosen such that the phase shift of each RC section is 60.Thus The RC ladder network produces a total phase shift of 180 between its input and output voltage for the given frequency. Since CE Amplifier produces 180 phases shift. The total phase shift from the base of the transistor around the circuit and back to the base will be exactly 360 or 0. This satisfies the Barkhausen condition for sustaining
oscillations and total loop gain of this circuit is greater than or equal to 1, this condition used to generate the sinusoidal oscillations.
PROCEDURE: 1. Identify the pin details of BC107 Transistor (or equivalent silicon Transistor such as BC108/547) and test it using a millimeter. Set up the circuit on breadboard as shown in figure. 2. A 12V Supply Voltage is given by using Regulated power supply and output is taken from collector of the Transistor. 3. By using CRO the output time period and voltage are noted. 4. Plot all the readings curves on a single graph sheet.
RESULT: Thus the RC phase shift oscillator using BJT was obtained and the output waveform was plotted.
67
VIVA QUESTIONS 1. Characteristics of PN Junction Diode

1. Define depletion region of a diode? 2. What is meant by transition & space charge capacitance of a diode? 3. Is the V-I relationship of a diode Linear or Exponential? 4. Define cut-in voltage of a diode and specify the values for Si and Ge diodes? 5. What are the applications of a p-n diode? 6. Draw the ideal characteristics of P-N junction diode? 7. What is the diode equation? 8. What is PIV? 9. What is the break down voltage? 10. What is the effect of temperature on PN junction diodes?
2. Characteristics of Zener Diode

1. What type of temp? Coefficient does the zener diode have? 2. If the impurity concentration is increased, how the depletion width effected? 3. Does the dynamic impendence of a zener diode vary? 4. Explain briefly about avalanche and zener breakdowns? 5. Draw the zener equivalent circuit? 6. Differentiate between line regulation & load regulation? 7. In which region zener diode can be used as a regulator? 8. How the breakdown voltage of a particular diode can be controlled? 9. What type of temperature coefficient does the Avalanche breakdown has? 10. By what type of charge carriers the current flows in zener and avalanche breakdown diodes?
3. Characteristics of CB Configuration
1. 2. What is the range of for the transistor? Draw the input and output characteristics of the transistor in CB configuration?
68
3. 4. 5. 6. 7. 8. 9.
Identify various regions in output characteristics? What is the relation between and ? What are the applications of CB configuration? What are the input and output impedances of CB configuration? Define (alpha)? What is EARLY effect? Draw diagram of CB configuration for PNP transistor?
10. What is the power gain of CB configuration?
4. Characteristics of CE Configuration
1. 2. 3. 4. 5. 6. 7. 8. 9. What is the range of for the transistor? What are the input and output impedances of CE configuration? Identify various regions in the output characteristics? what is the relation between and Define current gain in CE configuration? Why CE configuration is preferred for amplification? What is the phase relation between input and output? Draw diagram of CE configuration for PNP transistor? What is the power gain of CE configuration?
10. What are the applications of CE configuration?
5. Characteristics of Field Effect Transistor

1. What are the advantages of FET? 2. Different between FET and BJT? 3. Explain different regions of V-I characteristics of FET? 4. What are the applications of FET? 5. What are the types of FET? 6. Draw the symbol of FET. 7. What are the disadvantages of FET? 8. What are the parameters of FET? 9. FET is unipolar or bipolar? 10. FET is voltage controlled or current controlled?
69
6. Characteristics of Uni Junction Transistor

1. 2. 3. 4. 5. 6. 7. 8. 9. What is the symbol of UJT? Draw the equivalent circuit of UJT? What are the applications of UJT? Formula for the intrinsic stand off ratio? What does it indicates the direction of arrow in the UJT? What is the difference between FET and UJT? Is UJT is used an oscillator? Why? What is the Resistance between B1 and B2 is called as? What is its value of resistance between B1 and B2?
10. Draw the characteristics of UJT?
7. Characteristics of Silicon Controlled Rectifier (SCR)

1. What the symbol of SCR? 2. IN which state SCR turns of conducting state to blocking state? 3. What are the applications of SCR? 4. What is holding current? 5. What are the important types thyristors? 6. How many numbers of junctions are involved in SCR? 7. What is the function of gate in SCR? 8. When gate is open, what happens when anode voltage is increased? 9. What is the value of forward resistance offered by SCR? 10. What is the condition for making from conducting state to non conducting state?
8. UJT relaxation oscillator

1. What is meant by negative resistance region of UJT? 2. What is interbase resistance of UJT? 3. What waveform is generated across the capacitor in UJT relaxation Oscillator? 4. What is UJT? 5. Explain the working of UJT relaxation oscillator 6. Explain the term peak point voltage (Vp) of a UJT 70
7. Explain the term valley point voltage (Vv) of a UJT 8. What does UJT stand for? Justify the name UJT. 9. Difference between UJT and BJT 10. Draw the structure and symbol of UJT
9. Characteristics Photo diode

1. What is photo diode? 2. Define the term drift current 3. Define the term diffusion current 4. Explain the terms knee voltage and breakdown voltage w.r.t. diodes 5. What is avalanche breakdown in PN junction diode? 6. What is depletion region? 7. What are factors decides the magnitude of photo current? 8. Difference between PN junction (ordinary) diode and photo diode : 9. What is Dark current? 10. Applications of Photo diode :
10. Half Wave and Full Wave Rectifiers

1. What is the peak inverse voltage (PIV) & write its value for Halfwave and Full-wave rectifier? 2. What is the efficiency of half wave & full wave rectifier? 3. What is the rectifier? 4. What is the difference between the half wave rectifier and full wave Rectifier? 5. What is the o/p frequency of Bridge Rectifier? 7. What is the function of the filters? 8. Define regulation of the full wave rectifier? 9. What is meant by ripple and define Ripple factor? 10. What are the applications of a rectifier?
71
11. COMMON EMITTER AMPLIFIER 1. What is phase difference between input and output waveforms of CE amplifier? 2. What type of biasing is used in the given circuit? 3. If the given transistor is replaced by a p-n-p, can we get output or not? 4. What is effect of emitter-bypass capacitor on frequency response? 5. What is the effect of coupling capacitor? 6. What is region of the transistor so that it is operated as an amplifier? 7. How does transistor acts as an amplifier? 8. Draw the h-parameter model of CE amplifier? 9. What type of transistor configuration is used in intermediate stages of a multistage amplifier? 10. What is Early effect? 12. RC PHASE SHIFT OSCILLATOR 1. What are the conditions of oscillations? 2. Give the formula for frequency of oscillations? 3. What is the total phase shift produce by the RC ladder network? 4. Whether the oscillator is positive feedback or negative feedback? 5. What are the types of oscillators? 6. What is the gain of RC phase shift oscillator? 7. What is the difference between damped oscillations undamped oscillations? 8. What are the applications of RC oscillations? 9. How many resistors and capacitors are used in RC phase shift network 10.How the Barkhausen criterion is satisfied in RC phase shift oscillator
72

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P.S.R.

ENGINEERING COLLEGE, SIVAKASI-626 140

ELECTRONIC DEVICES AND CIRCUITS LAB- EE37

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(EE37-Electronic Devices and Circuits Lab)

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Most resistors have 4 bands:

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(EE37-Electronic Devices and Circuits Lab)

Major Blocks in a Practical CRT:

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P.S.R.Engineering College, Sivakasi

(EE37-Electronic Devices and Circuits Lab)

P.S.R.Engineering College, Sivakasi

(EE37-Electronic Devices and Circuits Lab)

P.S.R.Engineering College, Sivakasi

(EE37-Electronic Devices and Circuits Lab)

Forward Bias Condition

Reverse Bias Condition

Forward Bias Sl.No 1. 2. 3. 4. 5. 6. 7. Vf (V) If (mA)

Reverse Bias Sl.No Vr (V) Ir (A)

P.S.R.Engineering College, Sivakasi

(EE37-Electronic Devices and Circuits Lab)

Diode Resistor Voltmeter

IN 4001 1 k MC (0 2V) (0 30V)

1 1 One from each One from each 1 1 Required

Ammeter Regulated Power Supply Bread Board Connecting wires

(0 50mA) (0 - 500A) (0 30V)

Vf Change in Voltage in forward bias condition in Volts If

Resulting Change in current in forward condition in Amps

P.S.R.Engineering College, Sivakasi

(EE37-Electronic Devices and Circuits Lab)

V-I characteristics of PN junction diode

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(EE37-Electronic Devices and Circuits Lab)

P.S.R.Engineering College, Sivakasi

(EE37-Electronic Devices and Circuits Lab)

P.S.R.Engineering College, Sivakasi

(EE37-Electronic Devices and Circuits Lab)

P.S.R.Engineering College, Sivakasi

(EE37-Electronic Devices and Circuits Lab)

Forward Bias Condition

Reverse Bias Condition

P.S.R.Engineering College, Sivakasi

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9.2 V 1 k (0 2V) (0 10V) (0 50mA) (0 30V)

1 1 One from each 1 1 1 Required

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V-I characteristics of Zener diode

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TABULATION: Input Characteristics

VCE1 (V) = _____ Sl.No. 1. 2. 3. 4. 5. 6. 7. IB (A)

VCE2 (V) =_____ IB (A)

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(EE37-Electronic Devices and Circuits Lab)