Transparent Electronics Based on Transfer Printed Aligned Carbon Nanotubes on Rigid and Flexible Substrates

-30 -20 -10 0 0 -1 1 -2 2 -3 3 Vds (V) -4 4 -5 5

VDD (5 V)

I ds ( A A)

Vin ILED Light

Fumiaki Ishikawa Dept. of Chemical Engineering and Materials Science University of Southern California

Topics
1.

Introduction to Transparent Electronics Fabrication of Transparent ThinThinFilm Transistors (TTFTs) TTFTs on Rigid Substrates TTFTs on Flexible substrates Integration of TTFTs: Logic gate and LED control

2.

3. 4. 5.

What would transparent electronics do?

Current technology LED

Transparent monitor
Replace everything with transparent ones

Circuit

Transparent iPhone OLED transparent contact lense (display in eyes)

Heads up display

Will enable novel applications!

A key componentTransparent thin-film transistor (TTFT)

St Structure t of f a TFT

Intensive effort to find the best material for the channel (semiconductor) in TTFTs InGaZnO

Hideo, et al., Science, 2003

ITO

In2O3 nanowire

Marks, et al., Nature Materials, 2006

Ju, et al., Nature Nanotech., 2007

Other than transparency: requirements for a new TTFT

1. High mobility
High speed/frequency Low operation voltage for portable devices

3. Low temperature fabrication

Flexible devices Roll-to-roll fabrication compatible
<Roll-to-roll printing of circuits> Flexible device

2. P-type
Complement N-type TTFTs reported so far for CMOS circuits

Aligned nanotubes for TTFTs

Ali Aligned d nanotubes t b
One type of single-walled carbon nanotubes (CNTs) Substrate guided alignment during CVD process (on quartz) Controlled orientation enables easy registration Transparent due to small diameter
Random CNTs

Aligned nanotubes

Han, et al., J.A.C.S., 2005

P-type

High mobility

Low T fabrication

Maximum mobility ~1100 cm2/Vs

Martel, et al., APL, 1998

Seong, et al., Nature Nanotechnology, 2007

Transfer printing of aligned nanotubes enabling g low T fabrication

a) CVD growth of aligned nanotubes (CNT) b) Deposit Au film
Au

c) Remove CNT/Au by an adhesive tape

High T (900 C) C)

Q t Quartz

Aligned nanotubes

Adhesive tape

f) Etch Au

e) Remove the tape (heat to 130 C)

d) Print the CNT/Au/tape to a target substrate

Low T (130 C)

Target substrate

Key features 1. Low T 2. Keeping alignment

3. Repeatable 4. Scalable

Sophisticated nanotube network by the transfer method

Multiple transfer
Catalyst stripe

90

100 m

20 m

5 m

60
100 m 20 m
D en s it ty o f n an o tu b e

1 m

2 times

3 times

30 25 20 15 10 5 0 0 1 2 3 4

30 m

10 m

# of transfer

Scalability: wafer scale fabrication

Concept: C t A Array of f TTFT TTFTs over large area Proof: Devices on 3 3 glass wafer

D
Transmittance e

1.0 0.9 0.8 0.7 0.6 0.5 400 600 800 1000 Wave length (nm)

S Dielectric Gate Substrate

Materials Dielectric: SU8 (2 m) SD SD, gate: t ITO Substrate: glass/PET

<SEM images of the devices>

Source

Aligned nanotubes

Transmittance ~85% 85% in visible light regime

Channel Drain

5 um

TTFT performance on rigid substrates (glass)

40 Ids ( ) 20 0 -20 -40 -1.0 -0.5 0.0 0.5 Vds (V) 1.0
Vg = 3 V Capacitance model: An array of cylinders (nanotubes) on a dielectric (Seong, et al., Nature Nanotechnology, 2007) Nanotube

1/D
Dielectric Gate

CW =

1 1 sinh (2 tD ) C log + Q RD 2 0 S
4

80 60 Ids () 40 20 0

Data analysis

Mobility (c cm V s

-1 -1)

Vds = 0.1 V

10 10 10 10

M i Maximum mobility bilit ~1300 cm2/Vs

3

=
1

dI L d Vd CW W dV g

-40

-20

0 20 Vg (V)

40

40 80 120 Channel length (m)

Outstanding mobility of aligned nanotube TTFTs enabled by y contact management g

10
-1 -1) 4 3 2 1 0

Mobility y (cm V s

Ids () )

10 10 10 10 10

Aligned SWNT In2 O3 nanowire ITO InGaO3 (ZnO) 5

100
Au/ITO ITO

100 50 Ids (nA) 0

50 0 -50 -100

-50 -100 -1.0 -0.5 0.0 0.5 Vds (V) 1.0

Amorphous Si

-1

Au (<1 nm)/ITO: Ohmic contact ITO: Non-ohmic Non ohmic contact

2000

2005 Year

2010

<Band diagram> ITO CB CNT VB Large SB 3.9-4.4 eV CB CNT VB Small SB 5.3 eV Au

The highest mobility among existing TTFTs

Flexible TTFTs on PET

Performance change under bending

Negligible change

FET operation on a bent substrate Bending angle 90

Vg = V

Transparent & flexible logic gate (inverter)

VDD ( (5 V) )

Vin Vout

Gain ~0.4 0.4 with 2 um SU8 dielectric Can be improved by employing b tt di better dielectric l ti 20 nm SAND: x 100 (~40) 20 nm HfO HfO: : x 500 (~200)

LED control by the aligned nanotube TTFT

Light intensity modulation: modulation: ~103
VDD (5 V)

Vin ILED

Light

Vin = 30 V

Vin = 0 V

Vin = -30 V

A significant step forward to realize transparent display

F. N. Ishikawa et al., ACS Nano, 2009

Impact of our work

Developed low temperature fabrication of TTFTs Achieved the highest mobility as a TTFT Demonstrated flexible TTFTs Demonstrated transparent logic gate and LED control

A number of scientific/public media reporting our works including two TV programs! An image shown on Printed
1. 2. 3 3. 4. 5. 6 6. 7. 8. USC Viterbi school USC Public Relations Discovery Planet Canada Brink Nanowerk Small Times Printed Electronics World Science Dairy + more websites
Electronics World website

Further progress in transparent electronics at USC Nanolab

Fabrication j p printing g Ink-jet Stamp printing
CNT film Graphene film As doped In2O3 NW

Electrodes Channel

Graphene Ag nanowire

Ag nanowire film

Separated CNT

Acknowledgement
Prof Prof. . Chongwu g Zhou Hsiao Hsiao-kang Chang Koung Koung-min Ryu Other Oth Nanolab N l b members b