L
W
D
I =
( ) ( )
DS
V
n
# 1
2
TH(n)
V
GS
V
2
1
OX
C
n
L
W
D
I + =
NMOS Equations
drain source
p-type p-type
metal metal oxide insulator
metal
n-type
metal
gate
Same as NMOS, only p-type and n-type switched
PMOS (P-Channel Metal Oxide Semiconductor)
Transistor
metal metal oxide insulator
metal
metal
gate
source drain
When V
GS
is more negative than a threshold voltage V
TH(p)
, the
gate attracts many positive ions and holes (repels electrons)
Thus the applied V
GS
creates an induced p-type channel
under the gate (an area with positive ions).
- +
V
GS
< V
TH(p)
< 0
p-type
n-type
p-type
+ + +
+ + +
_ _ _ _
_
e e
e e
e e e
e e e
h h
h
h h
_
+ + +
+ +
PMOS Transistor Channel
p-type
metal metal oxide insulator
metal
n-type
metal
gate
source
drain
p-type
+ + +
+ + +
_ _ _ _
_
When a negative V
DS
is applied, the positive ions flow from the
source to the drain. (Positive current flows from source to drain).
The amount of current depends on V
DS
, as well as the number of
ions in the channel, channel dimensions, and material.
e e
e e
- +
e
V
GS
< V
TH(P)
< 0
e e
e e e
- +
V
DS
< 0
_
h h
h
h h + + +
+ +
PMOS Transistor Drain Current
G
D S
I
D
I
G
- V
DS
+
+
V
G
S _
PMOS Transistor Circuit Symbol
Symbol has dot at gate. NMOS does not.
I
D
, V
GS
, V
DS
, and V
TH(p)
are all negative.
These values are positive for NMOS.
Channel formed when V
GS
< V
TH(p)
. Opposite for NMOS.
Saturation occurs when V
DS
! V
GS
V
TH(p)
. Opposite for
NMOS.
triode mode
cutoff mode
saturation mode
V
DS
I
D
V
GS
= -3 V
V
GS
= -2 V
V
GS
= -1 V
V
DS
= V
GS
- V
TH(p)
PMOS I-V Curves
Cutoff Mode
Occurs when V
GS
" V
TH(p)
I
D
= 0
Triode Mode
Occurs when V
GS
< V
TH(p)
and V
DS
> V
GS
- V
TH(p)
Saturation Mode
Occurs when V
GS
< V
TH(p)
and V
DS
! V
GS
- V
TH(p)
( ) ( )
DS
V /2
DS
V
TH(p)
V
GS
V
OX
C
p
L
W
D
I =
( ) ( )
DS
V
p
# 1
2
TH(p)
V
GS
V
2
1
OX
C
p
L
W
D
I + =
PMOS Equations
Solving Transistor Circuits
Guess the transistor mode (for each transistor).
Sometimes you can make educated guess
Write down the I-V relationships that go with those
modes: 1 equation, 3 unknowns (I
D
, V
DS
, V
GS
) for
each transistor
Write down KVL and KCL equations (enough so that
we can solve for the 3 unknowns)
Check values of I
D
, V
DS
, V
GS
do they agree with
mode?
If yes, done. Else, start over with new guess.