2001 Fairchild Semiconductor Corporation Rev.

A2, June 2001

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NPN Silicon Darlington Transistor
Absolute Maximum Ratings T
C
=25C unless otherwise noted
Electrical Characteristics T
C
=25C unless otherwise noted
* Pulse Test: PW300s, Duty Cycle2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 100 V
V
CEO
Collector-Emitter Voltage 100 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 2 A
I
CP
Collector Current (Pulse) 4 A
I
B
Base Current 50 mA
P
C
Collector Dissipation (T
C
=25C) 20 W
Collector Dissipation (T
a
=25C) 1.75 W
T
J
Junction Temperature 150 C
T
STG
Storage Temperature - 65 ~ 150 C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage I
C
= 30mA, I
B
= 0 100 V
I
CEO
Collector Cut-off Current V
CE
= 50V, I
B
= 0 20 A
I
CBO
Collector Cut-off Current V
CB
= 100V, I
B
= 0 20 A
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 2 mA
h
FE
* DC Current Gain V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
500
1000
200
12K
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 2A, I
B
= 8mA
I
C
= 4A, I
B
= 40mA
2
3
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= 4A, I
B
= 40mA 4 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= 3A, I
C
= 2A 2.8 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 0.75A 25 MHz

C
ob
Output Capacitance V
CB
= 10V, I
E
= 0
f = 0.1MHz
100 pF
MJD112
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, - I Suffix)
Electrically Similar to Popular TIP112
1.Base 2.Collector 3.Emitter
R1 10k
R2 0.6k
Equivalent Circuit
B
E
C
R1 R2
D-PAK I-PAK 1 1
2001 Fairchild Semiconductor Corporation
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Rev. A2, June 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating Area
0.01 0.1 1 10
10
100
1000
10000
VCE = 3V


h
F
E
,

D
C

C
U
R
R
E
N
T

G
A
I
N
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 250 IB
VCE(sat)
VBE(sat)


V
B
E
(
s
a
t
)
,

V
C
E
(
s
a
t
)
[
V
]
,

S
A
T
U
R
A
T
I
O
N

V
O
L
T
A
G
E
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000


C
o
b
[
p
F
]
,

C
A
P
A
C
I
T
A
N
C
E
VCB[V], COLLECTOR-BASE VOLTAGE
0.01 0.1 1 10
0.1
1
10
V
CC
=30V
I
C
=250I
B
t
D
t
R


t
R
,
t
D
[

s
]
,

T
U
R
N

O
N

T
I
M
E
I
C
[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
10
V
CC
=30V
I
C
=250I
B
t
F
t
STG


t
S
T
G
,
t
F
[

s
]
,

T
U
R
N

O
F
F

T
I
M
E
I
C
[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
5
m
s
1
0
0

s
1
m
s
D
C


I
C
[
A
]
,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T
VCE[V], COLLECTOR-EMITTER VOLTAGE
2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
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Typical Characteristics (Continued)
Figure 7. Power Derating
0 25 50 75 100 125 150 175
0
5
10
15
20
25


P
C
[
W
]
,

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N
TC[
o
C], CASE TEMPERATURE
Package Demensions
2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
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Dimensions in Millimeters
6.60 0.20
2.30 0.10
0.50 0.10
5.34 0.30
0
.
7
0

0
.
2
0
0
.
6
0

0
.
2
0
0
.
8
0

0
.
2
0
9
.
5
0

0
.
3
0
6
.
1
0

0
.
2
0
2
.
7
0

0
.
2
0
9
.
5
0

0
.
3
0
6
.
1
0

0
.
2
0
2
.
7
0

0
.
2
0
M
I
N
0
.
5
5
0.76 0.10
0.50 0.10
1.02 0.20
2.30 0.20
6.60 0.20
0.76 0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0
.
8
9

0
.
1
0
(
0
.
1
0
)
(
3
.
0
5
)
(
1
.
0
0
)
(
0
.
9
0
)
(
0
.
7
0
)
0
.
9
1

0
.
1
0
2.30TYP
[2.300.20]
2.30TYP
[2.300.20]
MAX0.96
(4.34) (0.50) (0.50)
D-PAK
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E
2
CMOS
EnSigna
FACT
FACT Quiet Series
FAST

FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench

QFET
QS
QT Optoelectronics
Quiet Series
SLIENT SWITCHER

SMART START
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TruTranslation
TinyLogic
UHC
UltraFET

VCX
STAR*POWER is used under license
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