FET operation

IV characteristics and output plot of a JFET n-channel transistor.

The FET controls the flow of electrons (or electron holes) from the source to drain by
affectin the si!e and shape of a "conducti#e channel" created and influenced by #oltae
(or lac$ of #oltae) applied across the ate and source terminals (For ease of discussion%
this assumes body and source are connected). This conducti#e channel is the "stream"
throuh which electrons flow from source to drain.
In an n-channel depletion-mode de#ice% a neati#e ate-to-source #oltae causes a
depletion region to e&pand in width and encroach on the channel from the sides%
narrowin the channel. If the depletion reion e&pands to completely close the channel%
the resistance of the channel from source to drain becomes lare% and the FET is
effecti#ely turned off li$e a switch. 'i$ewise a positi#e ate-to-source #oltae increases
the channel si!e and allows electrons to flow easily.
(on#ersely% in an n-channel enhancement-mode de#ice% a positi#e ate-to-source #oltae
is necessary to create a conducti#e channel% since one does not e&ist naturally within the
transistor. The positi#e #oltae attracts free-floatin electrons within the body towards
the ate% formin a conducti#e channel. )ut first% enouh electrons must be attracted near
the ate to counter the dopant ions added to the body of the FET* this forms a reion free
of mobile carriers called a depletion reion% and the phenomenon is referred to as the
threshold voltage of the FET. Further ate-to-source #oltae increase will attract e#en
more electrons towards the ate which are able to create a conducti#e channel from
source to drain* this process is called inversion.
For either enhancement- or depletion-mode de#ices% at drain-to-source #oltaes much
less than ate-to-source #oltaes% chanin the ate #oltae will alter the channel
resistance% and drain current will be proportional to drain #oltae (referenced to source
#oltae). In this mode the FET operates li$e a #ariable resistor and the FET is said to be
operatin in a linear mode or ohmic mode.
+,-+.-
If drain-to-source #oltae is increased% this creates a sinificant asymmetrical chane in
the shape of the channel due to a radient of #oltae potential from source to drain. The
shape of the in#ersion reion becomes "pinched-off" near the drain end of the channel. If
drain-to-source #oltae is increased further% the pinch-off point of the channel beins to
mo#e away from the drain towards the source. The FET is said to be in saturation mode*
+/-
some authors refer to it as active mode% for a better analoy with bipolar transistor
operatin reions.
+0-+1-
The saturation mode% or the reion between ohmic and saturation%
is used when amplification is needed. The in-between reion is sometimes considered to
be part of the ohmic or linear reion% e#en where drain current is not appro&imately linear
with drain #oltae.
E#en thouh the conducti#e channel formed by ate-to-source #oltae no loner connects
source to drain durin saturation mode% carriers are not bloc$ed from flowin.
(onsiderin aain an n-channel de#ice% a depletion reion e&ists in the p-type body%
surroundin the conducti#e channel and drain and source reions. The electrons which
comprise the channel are free to mo#e out of the channel throuh the depletion reion if
attracted to the drain by drain-to-source #oltae. The depletion reion is free of carriers
and has a resistance similar to silicon. 2ny increase of the drain-to-source #oltae will
increase the distance from drain to the pinch-off point% increasin resistance due to the
depletion reion proportionally to the applied drain-to-source #oltae. This proportional
chane causes the drain-to-source current to remain relati#ely fi&ed independent of
chanes to the drain-to-source #oltae and 3uite unli$e the linear mode operation. Thus in
saturation mode% the FET beha#es as a constant-current source rather than as a resistor
and can be used most effecti#ely as a #oltae amplifier. In this case% the ate-to-source
#oltae determines the le#el of constant current throuh the channel