1

DO NOT OPEN THI S TEST BOOKLET UNTI L YOU ARE ASKED TO DO SO

Test Booklet Series

TEST BOOKLET

Electronics & Communication Paper

Topic Test: EDC&Analog circuit

Time Allowed: One Hour
Maximum Marks: 100
INSTRUCTIONS
1. IMMEDIATELY AFTER THE COMMENCEMENT OF THE EXAMINATION YOU SHOULD
CHECK THAT THIS TEST BOOKLET DOES NOT HAVE ANY UNPRINTED OR TORN OR
MISSING PAGES OR ITEMS ETC. IF SO, GET IT REPLACED BY A COMPLETE TEST
BOOKLET.
2. ENCODE CLEARLY THE TEST BOOKLET SERIES A, B, C, OR D AS THE CASE MAY BE IN
THE APPROPRIATE PLACE IN THE ANSWER SHEET.
3. You have to enter your Roll Number on the
Test Booklet in the Box provided alongside.
DO NOT write anything else on the Test Booklet.
4. This Test Booklet contains 60 items (questions). Each item comprises four responses (answers). You
will select the response which you want to mark on the Answer Sheet. In case you feel that there is
more than one correct response, mark the response which you consider the best. In any case, choose
ONLY ONE response for each item.
5. You have to mark all you responses ONLY on the separate Answer Sheet provided. See directions in
the Answer Sheet.
6. All items carry equal marks.
7. Before you proceed to mark in the Answer Sheet the response to various items in the Test Booklet,
you have to fill in some particulars in the Answer Sheet as per instructions sent to you with your
Admission Certificate.
8. After you have completed filling in all your responses on the Answer Sheet and the examination has
concluded, you should hand over to the Invigilator only the Answer Sheet. You are permitted to take
away with you the Test Booklet.
9. Sheets for rough work are appended in the Test Booklet at the end.
10. Penalty for wrong answers:
THERE WILL BE PENALTY FOR WRONG ANSWERS MARKED BY A CANDIDATE IN THE
OBJECTIVE TYPE QUESTION PAPERS.
(i) There are four alternatives for the answer to every question. For each question for which a
wrong answer has been given by the candidate, one-third (0.33) of the marks assigned to that
question will be deducted as penalty.
(ii) If a candidate gives more than one answer, it will be treated as a wrong answer even if one
of the given answers happens to be correct and there will be same penalty as above to that
question.
(iii) If a question is left blank, i.e., no answer is given by the candidate, there will be no penalty
for that question
DO NOT OPEN THI S TEST BOOKLET UNTI L YOU ARE ASKED TO DO SO





2
Q.1. The mobility of electrons in a semiconductor decrease with increasing donor density because:
1. Doping decreases the relaxation time of electrons
2. More holes are generated so that the effective mobility decreases
3. Electrons are trapped by the donors
Which of the following statements are correct:
(A) Only 1 (B) Only 3 (C) Both 1 & 2 (D) 1, 2 & 3
Q.2. Consider the following statements:
Electrical conductivity of a metal has negative temperature coefficient since
1. electron concentration decreases with temperature.
2. electron mobility decreases with temperature.
3. electron-lattice scattering decreases with temperature.
Which of the statements given above are correct ?
(A) Only 1 (B) Only 2 (C) Both 1 and 2 (D) 1, 2 & 3
Q.3. Consider the following statement : A heavily doped semiconductor has
1. Negative temperature coefficient of resistance
2. Negative temperature coefficient of conductance
3. Positive temperature coefficient of resistance
4. Positive temperature coefficient of conductance
Which of the following statements are correct:
(A) 1 & 2 (B) 2 & 3 (C) 1 & 4 (D) 3 & 4
Q.4. Mobility of electrons is higher than mobility of holes because:
1. Curvature of CB is smoother than VB
2. Effective mass of electrons is lower than that of holes
3. Effective mass of electrons is higher than that of holes
4. Curvature of VB is smoother than CB
Which of the following statements are correct:
(A) 1 & 2 (B) 2 & 3 (C) 1 & 3 (D) 3 & 4
Q.5. Consider the following statements about temperature effect in Ge and Si:
1. Si is more stable for temperature than Ge
2. Si is less sensitive towards temperature than Ge.
Which of the statements given above are correct ?
(A) Only 1 (B) Only 2 (C) Both 1 and 2 (D) Neither 1 nor 2
Q.6. Consider the following statements for an n-type semiconductor:
1. Donor level ionization decreases with temperature.
2. Donor level ionization increases with temperature.
3. Donor level ionization is independent of temperature.
4. Donor level ionization increases as E
D
(donor energy level) moves towards the conduction band at
a given temperature.
Which of these statements is / are correct?
(A) 1 only (B) 2 only (C) 2 and 4 (D) 3 only





3
Q.7. Excess carriers are generated in a sample of N-type semiconductor by shining light at one end. The
current flow in the sample will be made up of
(A) Diffusion flow of carriers (B) drift flow of carriers
(C) Both diffusion and drift flow of carriers (D) Neither diffusion nor drift flow of carriers
Q. 8. The majority carriers in an N-type& P-type semiconductor have an average drift velocity v in a
direction perpendicular to a uniform magnetic field B. The electric field E induced due to Hall effect
acts in the direction:
(A) v B in both N type and P type (B) B v in both N type and P type
(C) v B in N type only (D) v is parallel to B in both N type and P type
Q.9. A half-effect transducer with Hall coefficient K
H
= 1 10
8
is required to measure a magnetic field
of 10,000 gauss. A 2 mm bismuth slab is used as the transducer with a current of 3A. The output
voltage of the transducer will be
(A) 7.5 10
6
V (B) 15 10
6
V (C) 20 10
4
V (D) 22.5 10
4
V
Q.10. A si wafer is doped with 10
15
Phosphorous atoms/cm
3
.what is the position of Fermi-level of E
F
at
room temperature :
(A) Above intrinsic level by an amount of 0.3 eV (B) Above intrinsic level by an amount of 0.6 eV
(C) Below intrinsic level by an amount of 0.3 eV (D) Below intrinsic level by an amount of 0.6 eV
Q.11. If the reverse voltage across a P-N Junction is increased three times then the junction capacitance:
(A) will decrease by a factor of 2 (B) will decrease by a factor of 3
(C) will increase by a factor of 2 (D) will increase by a factor of 3
Q.12. Consider the following statements about P-N Junction:
1. Forward biasing of P-N junction decreases the value of drift current
2. Reverse biasing of P-N junction increases the value of drift current
3. An unbiased P-N Junction develops a built-in potential at the junction with the N-side positive and
the P-side negative.
4. The unbiased p-n junction behaves as a battery and supplies current to a resistance connected
across its terminals.
Which of the following statements are correct:
(A) 1, 2 & 3 (B) 2, 3 & 4 (C) 3 & 4 (D) 1, 2, 3 & 4
Q.13. Consider the following statement about reverse current of a Silicon& Germanium diode:
(A) Reverse current in both Ge and Si is independent of reverse bias voltage
(B) Reverse current in Ge only is independent of reverse bias voltage
(C) Reverse current in Si only is independent of reverse bias voltage
(D) Reverse current in both Ge and Si does not depend upon temperature
Q.14. The i-v characteristics of the diode in the circuit given below are
0.7
A, 0.7V
i
500
0 A, 0.7V
u
u >

u <

4

The current in the circuit is
(A) 10mA (B) 9.3mA (C) 6.67mA (D) 6.2mA
Q.15. A semiconductor has a band gap of 0.62eV.Find the maximum wavelength for resistance change in
the material by photon absorption.
(A) 1 m (B) 1.5 m (C) 2.0 m (D) 2.5 m
Q.16. An LED is made of GaAsP having a band gap of 1.9eV. what is the color of the radiation emitted
from light:
(A) Blue (B) Green (C) Yellow (D) Red
Q.17. Which of the following statements are true for a semiconductor that is used as a photo conductor ?
1. It should have doping either N type or P type
2. It should have small response time.
3. It should have an energy band gap value that matches with frequency of light that is used to excite
the photoconductor.
4. Its dark conductivity is small.
Select the correct answer using the codes given below :
(A) 1, 2 & 3 (B) 2, 3 & 4 (C) 1, 3 & 4 (D) 1, 2, 3 & 4
Q.18. The reverse bias breakdown of high speed silicon transistors is due to
(A) Avalanche breakdown mechanism at both the junctions
(B) Zener breakdown mechanism at both the junctions
(C) Zener breakdown mechanism at base-collector junction and avalanche breakdown mechanism at
base-emitter junction
(D) Zener breakdown mechanism at base-emitter junction and avalanche breakdown mechanism at
base-collector junction
Q.19. Find the correct match between Group-I and Group-II
Group-I Group-II
E- Varactor diode 1. Voltage reference
F- PIN diode 2. High frequency switch
G- Zener diode 3. Tuned circuits
H- Schottky diode 4. Current controlled attenuator
(A) E-4, F-2, G-1, H-3 (B) E-2, F-4, G-1, H-3
(C) E-3, F-4, G-1, H-2 (D) E-1, F-3, G-2, H-4
Q.20. Consider the following statements about conditions that make a metal-semiconductor contact
rectifying:
1. N-type semiconductor with its work function |
s
, greater than the work function |
M
of the metal.
2. N-type semiconductor with its work function |
s
, smaller than the work function |
M
of the metal.




5
E B C
W
E
W
B
W
C
3. P-type semiconductor with its work function |
s
, greater than the work function |
M
of the metal.
4. P-type semiconductor with its work function |
s
, smaller than the work function |
M
of the metal.
(A) 1 and 3 are correct (B) 2 and 3 are correct
(C) 1 and 4 are correct (D) 2 and 4 are correct
Q.21. These are the different methods followed to take p n p n device form its conducting state to the
non-conducting state?
1. Reducing the anode current below the holding value.
2. By changing the polarity of anode voltage
3. Reducing the gate current to zero
4. Reducing the gate voltage to zero
5. By changing the polarity of gate voltage
Which of the following statements are correct?
(A) Only 1 & 2 (B) 1, 2 & 3 (C) 1, 3, & 5 (D) 1, 2, 3, 4 & 5
Q.22. Consider the following statements :
1. A UJT is a voltage controlled device
2. A SCR is Current controlled device
Which of the following statements are correct:
(A) Only 1 (B) Only 2 (C) Both 1 & 2 (D) Neither 1 nor 2
Q.23. Moor law relates to
(A) speed of operation of bipolar devices (B) speed of operation of MOS device
(C) power rating of MOS devices (D) level of integration of MOS devices
Q.24. Consider the following statements used for high speed transistor:
1. Thin base width
2. Heavy doping in base region
3. Non uniform doping in base region
Which of the following statements are correct:
(A) 1 & 2 (B) 2 & 3 (C) 1 & 3 (D) 1, 2 & 3
Q.25. In a bipolar junction transistor. The collector break down voltage increases :
(A) the base doping is increased and the base width is reduced
(B) the base doping is reduced and the base width is increased
(C) the base doping base and width are reduced
(D) the base doping and base width are increased
Q.26. Which of the B.J.T is best suited for analog circuitry (for amplification purpose)
Base width = W
B

Collector width is = W
C

Emitter width = W
E
(Device is p-n-p type)




p
t = minority carrier lifetime in base

t
t = transit time of minority carrier in base




6
+10V
V =3V
BB
+

p n p
W
B
(A)
B C E
W W W << << (B)
B E C
W W W << <

p t
t > t
p t
t > t
(C)
B E C
W W W >> > (D)
B E C
W W W = >>

t p
t > t
t p
t > t
Q.27. A PNPN diode is biased in forward blocking region with an anode to cathode voltage of 36 Volt. If
1 2
0.25, 0.35 o = o = and leakage currents are 160 nA then the forward resistance of diode is given by:
(A) 45 MO (B) 50 MO (C) 80 MO (D) 120 MO
Q.28. In the circuit shown below, the silicon npn transistor Q has a very high value of |. The required
value of R
2
in kO to produce
C
I 1mA = is

(A) 20 (B) 30 (C) 40 (D) 50
Q.29.






The trans-conductance g
m
of the transistor used in the CE amplifier shown in the above circuit,
operating at room temperature is
(A) 92 mA/V (B) 46 mA/V (C) 184 mA/V (D) 25 mA/V
Q.30. For a given B.J.T shown:



If we manage to increase the W
B
(width) (Base width) to twice of its initial value then (gain factor)
of the device
(A) Increase to 2 twice of its initial value (B) decreases to
1
2
its initial value
(C) Increase to 4 times of its initial value (D) decreases to
1
4
its initial value





7
Q.31. Which of the following are essentials of a transistor biasing circuit?
1. Proper zero signal collector current flow
2. V
CE
should not fall below 0.5 V for Germanium and 1 V for Silicon
3. Ensure stabilization of operating point
4. Loading to the source
(A) 1, 2 and 3 only (B) 1, 2 and 4 only (C) 3 and 4 only (D) 1, 2, 3 and 4
Q.32. A MOS capacitor made using N type substrate is in the accumulation mode. The dominant charge in
the channel is due to the presence of:
(A) Holes (B) Electrons
(C) Positively charged ions (D) Negatively charged ions
Q.33. MOSFET is a switch preferred at high frequency in digital circuit because:
(A) Fabrication of MOSFET is simpler (B) Minority carriers are absent in MOSFET
(C) It is a symmetrical device (D) It has very high input impedance
Q.34. Consider the following statements about channel length modulation in MOSFET:
1. Length of channel decreases due to decrease in drain voltage
2. Length of channel decreases due to increase in drain voltage
3. This effect decreases output impedance
4. This effect increases output impedance
Which of the following statements are true:
(A) 1 & 3 (B) 2 & 3 (C) 1 & 4 (D) 2 & 4
Q.35. An N-channel JFET has I
DSS
=2mA and V
P
=-4 volt its transconductance g
m
( in milli-ohm) for an
applied gate to source voltage V
GS
=-2 Volt is.
(A) 0.25 (B) 0.5 (C) 0.75 (D) 1.0
Q.36. Consider the following statements about Threshold voltage of MOSFET:
1. It should have value between (0.5V-3.0V)
2. This should have maximum value
3. Body effect changes the value of threshold voltage
Which of the following statements are correct:
(A) 1 & 2 (B) 2 & 3 (C) 1 & 3 (D) 1, 2 & 3
Q.37. Thermal runaway is not possible in FET because, as the temperature of FET increases
(A) the drain current increases (B) the mobility increases
(C) the mobility decreases (D) the transconductance increases
Q.38. Two MOSFETS M
1
and M
2
have channel widths and lengths of W, L and 2W, L/2 and drain currents
of I
1
and I
2
respectively. Assuming that both M
1
and M
2
are ON, under the same temperatures and
biasing voltages, which one of the following is true??
(A)
1
2
4
I
I = (B)
1
2
2
I
I = (C) I
2
= 2I
1
(D) I
2
= 4I
1

Q.39. What is the output impedance of a source follower, if a large value of resistance R
s
is connected b/w
source and ground. (If r
d
= )
(A) R
s
(B) 1/gm (C) R
s
+ 1/gm (D) gm





8
I
+
V
D
1
D
2
100O
6v
Q.40. The circuit shown in Figure, best describes as a :
(A) Clamper circuit (B) Slicer circuit or 2 level clipper
(C) Full wave voltage doubler (D) Base clipping circuit or bottom clipper






Q.41. In an energy band-diagram of an open circuited P-N, Junction diode, the energy band of N-region
has shifted relative to that of a P-region. (Where V
0
is contact potential)
(A) Downward by V
0
(B) Downward by qV
0

(C) Upward by V
0
(D) Upward by qV
0

Q.42. In a rectifier circuit if an a.c. supply is 60 Hz, then what is the a.c. ripple at output?
(A) It will be 60 Hz for Half wave rectifier and 60 Hz for Full wave rectifier
(B) It will be 60 Hz for Half wave rectifier and 120 Hz for Full wave rectifier
(C) It will be 120 Hz for Half wave rectifier and 60 Hz for Full wave rectifier
(D) It will be 120 Hz for Half wave rectifier and 120 Hz for Full wave rectifier
Q.43. In the given circuit, D
1
is an ideal germanium diode and D
2
is a silicon diode having its cut-in
voltage as 0.7 V, forward resistance as 20 and reverse saturation current (I
s
) as 10 nA.
What are the values of I and V for this circuit respectively?





(A) 60 mA and 0 V (B) 50 mA and 0 V (C) 53 mA and 0.7 V (D) 44 mA and 1.58 V
Q.44. If a BJT is operating in active region with I
C
= 1mA and =100 then what is the value of r
t

(A) 1.5 Kohm (B) 2.0 Kohm (C) 2.5 Kohm (D) 3.0 Kohm
Q.45. A CE-amplifier has R
L
= 10 k. Given h
ie
= 1 k, h
fe
= 50, h
re
= 0 and 1/h
oe
40 k. What is the
voltage gain?
(A) 500 (B) 400 (C) 50 (D) 40
Q.46. Consider the following statements :
1. CE configuration is suitable at high/Radio frequency due to presence of Junction capacitances
2. CB Configuration is suitable for low/audio frequency
Which of the following statements are correct:
(A) Only 1 (B) Only 2 (C) Both 1 & 2 (D) Neither 1 nor 2
Q.47. If an amplifier has power of 1 watt then what is its value in dBm:
(A) 10dBm (B) 15dBm (C) 20dBm (D) 30dBm






9

V
out
v
i
V
bias

I
out
M
2
M
1
Q.48. Consider the following statements about lower cut off frequency in BJT:
1. It is mainly decided by coupling capacitor
2. Phase shift in single stage at lower 3dB is 225 degree
3. Phase shift in single stage at lower 3dB is 135 degree
Which of the following statements are correct:
(A) Only 1 (B) Only 2 (C) 1 & 2 (D) 1 & 3
Q.49. Two identical stages with each having a voltage gain of 50,input resistance of 1Kohm and output
resistance of 250 ohm are cascaded then what is the open circuited voltage gain of combined
amplifier:
(A) 1000 (B) 1500 (C) 2000 (D) 2500
Q.50. Consider the following statements about cascoded amplifier :
1. It has large voltage gain and high output impedance
2. It is wide band amplifier and is used for high frequency applications
3. It has high value of current gain
(A) 1 & 2 (B) 2 & 3 (C) 1 & 3 (D) 1, 2 & 3
Q.51. Two identical NMOS transistors M1 and M2 are connected as shown below. V
bias
is chosen so that
both transistors are in saturation. The equivalent g
m
of the pair is defined to be
out
i
I
V
c
c
at constant V
out
.






The equivalent g
m
of the pair is:
(A) The sum of individual g
m
s of the transistors (B) The product of individual g
m
s of the transistors
(C) Nearly equal to the g
m
of M1 (D) nearly equal to g
m
/g
o
of M2
Q.52. As NPN transistor has a beta cut off frequency
f

of 1 MHz and common emitter short circuit low

frequency current gain of 200.I fits unity gain frequency f
T
and the alpha cut-off frequency f

respectively are:
(A) 200 MHz, 201 MHz (B) 200 MHz,199 MHz
(C) 199 MHz, 200 MHz (D) 201 MHz,200 MHz
Q.53. In a voltage-voltage feedback as shown below, which one of the following statements is TRUE about
type of feedback:
(A) Series-Series
(B) Series-Shunt
(C) Shunt-series
(D) Shunt-shunt






10
7
4 8
3
6
2
1
5
555
+5v
R
A
R
B
C
C
F
o/p
100K
v
0
i
x
10K
1MO
v
x
Q.54. Consider the following:
1. Oscillator 2. Emitter follower
3. Cascaded amplifier 4. Power amplifier
Which of these use feedback amplifiers?
(A) 1 and 2 (B) 1 and 3 (C) 2 and 4 (D) 3 and 4
Q.55. The function of the diode D in the timer circuit shown below is to








(A) Increase the charging time of C (B) Decrease the charging time of C
(C) Increase the discharging time of C (D) Decreases the discharging time of C
Q.56. In case of video amplifier wide banding is done by:
(A) Peaking coils only in series (B) Peaking coils only in shunt
(C) Peaking coils either in series or shunt (D) By use of neutralizing capacitors
Q.57. Consider the following statements :
1. Stagger tuning is used for wider band pass
2. Synchronous tuning is used for narrower band pass
3. In stagger tuning both tuned circuits are tuned to different frequency
4. In synchronous tuning both tuned circuits are tuned to same frequency
Which of the following statements are correct:
(A) 1, 2 & 3 (B) 2, 3 & 4 (C) 1, 3 & 4 (D) 1, 2, 3 & 4
Q.58. What is the value of i/p impedance Rin = (v
x
/i
x
) of circuit shown.
(A) 100 KO (B) 100 KO (C) + 1 MO (D) 1 MO

















11
+

C
R
R
L
V
i
V
0

+
C
R
v
0

+
R
1
R
2
R
3
C
Q.59. The OPAMP circuit shown in figure represents
(A) Low Pass Filter
(B) High Pass Filter
(C) Band Pass Filter
(D) Band Reject Filter




Q.60. Given circuit is used as a:









(A) Square wave generator (B) Sinusoidal wave generator
(C) Triangular wave generator (D) Monostable multivibrator





















12
Engineering Service Examination -2014

SI No.


Electronics&Telecommunication Engineering
PAPER-EDC& Analog
(Conventional)

Time allotted: 90 Minute Maximum marks: 100
INSTRUCTIONS
Candidates should attempt Question No. 1 which is compulsory and remaining FOUR from questions taking
two each from section-A and Section-B. The number of marks carried by each question is indicated at the
end of the question. Answers must be written only in English. Assume suitable data if found necessary and
indicate the same clearly. Values of the following constants may be used wherever necessary:

Electronic charge = 1.6 10
9
Coulomb
Free space permeability = 4t 10
7
Henry /m.
Free space permittivity =
9
1
10
36t

| |

|
\ .
Farad/m.
Velocity of light in free space = 3 10
8
m/ sec.
Boltzmann constant = 1.38 10
23
joule /K.
Planck constant = 6.626 10
34
joule-sec.

Important: Candidates are to note that all parts and sub parts of a question are to be attempted
continuously in answer book. That is all parts and sub parts of a question being attempted must be
completed before attempting the next question.

Any page left blank in answer book must be clearly struck out. Answers that follow pages left blank
may not be given credit.

















13

+
R
1
v
1
R
R
1
C
v
0
+

V
BE
+
I
B

+
5V
V
BB
R
B
I
CBO
R
L
I =0
E
+

V
CC
Q.1. (a) (i) why Si is preferred over Ge in semiconductor physics? (3)
(ii) why mobility of electrons is higher than mobility of holes. (2)
(b) Explain variation of mobility with respect to temperature. (5)
(c) Explain channel width modulation and Body effect in case of MOS. (5)
(d) Derive the transfer function of the circuit shown below and identify the function of the circuit.(5)







SECTION-A
Q.2. (a) Explain Hall effect for N-type with Proper mathematical equations what is Hall coefficient for N
type semiconductor. (10)
(b) A silicon abrupt p-n junction at 300 K has acceptor density, N
a
= 10
18
cm
3
and donor density,
N
d
= 10
15
cm
3
. If the intrinsic concentration, N
i
= 1.5 10
10
cm
3
, calculate the built-in voltage,
V
0
Derive the relations used. (10)
Q.3. (a) In the transistor circuit shown below I
CBO
= 2 Amp at 25C and doubles for every 10 C
increase in temperature.






(i) Find maximum allowable value of R
B
if the transistor is to remain cut off at 75C. Assume
V
BE(cut off)
= 0.1 V. (10)
(ii) If V
BB
= 1.0V and R
B
= 50 kO how high may the temperature increase before the transistor
comes out of cut off ? (5)
(b) Explain Transfer characteristics of N Channel MOS. (5)
Q.4. (a) Draw the electrical equivalent circuit of a Quartz Crystal explaining the significance of the
various components of the circuit. (10)
(b) Draw neat sketches of Impedance vs Frequency, Reactance Versus Frequency of the Quartz
resonator indicating the critical frequencies and their values. (10)










14
+

V
0
+

+
V
1
V
2
+

R
1
R
1
R
2
R
2
SECTION-B
Q.5. (i) Explain why bias stabilization is done in a bipolar junction transistor amplifier circuit. (5)
(ii) Draw a fixed bias circuit and a self bias circuit using a BJT and mention typical component
values and supply voltages for your circuit. (5)
(iii) Briefly explain the principle of operation of fixed bias and self bias circuits using BJT. (5)
(iv) Compare the relative merits and demerits of fixed bias and self bias circuits using BJT. from the
application point of view. Choose, with suitable reasons, the one which you would recommend
for cascaded amplifier operation. (5)
Q.6. (a) Explain the distinguishing features of astable, monostable and bistable multivibrator and give the
operational details of any one of them. (15)
(b) What are various type of wide banding techniques. (5)
Q.7. (a) Find the output voltage in terms of V
1
V
2
R
1
and R
2
for the differential input amplifier
consisting of a base amplifier of infinite gain as show in the figure below. (10)






(b) Explain working of Wein bridge oscillator by use of OP-AMP circuit (10)
























15
CB
VB
CB
VB
E
D
IES 2014 Test-1 Solution:
1. (A) By increasing doping relaxation time is decreased because if more heavy material is doped
higher is the probability of collision and more carriers will collide with an ion in given time
& mean free time between collision is reduced so value of
( )
*
e
&
m
t
t + = so mobility value
will be reduced.
2. (B) In case of metal if temperature is (|) the number of electrons per unit volume will remain
same. Thermal speed will (|) and amplitude of atomic vibration will (|) due to that time
between successive collisions will decrease which will decrease mobility and conductivity
value will decreases.
3. (B) In case of heavily doped semiconductor, donor level is not in discrete form due to high value
of doping. In this case energy due to temperature will ignite internal interaction within ions
which will result in (+) in mobility & finally decrease in conductivity.
So
( )
o + with (|) in temp

ve
ve
o
+

R ve
G ve
+

4. (A)
*
e
m
t
=

n p
>

* *
n p
m m <


V. B have attractive force from nucleus & internal force from near by electrons so that
curvature of CB is smooth than valance band & due to this reason effective man of e

is less
than effective mass of hole.
5. (A) Si :14 2,8, 4
Ge: 32 2,8,18, 4
In case of Silicon Valance electrons are tightly attached while in Germanium these electrons
are loosely attached so for same value of temperature Silicon is more temperature stable than
Germanium. If in case of Ge by 1C rise in temp conductivity will (|) around 5% and in Si it
is (|) around 7.5%.
6. (C) As statement (2) and statement (4) is true.











16
v
I
+ + +
+ + +
P-type
f
m Z
X
E
Y
7. (A) Diffusion flow of minority carrier.
8. (B)







( ) ( ) ( ) ( )
m x x z z x z y
F e B e B e v a B a ev B a = v = v = + =
E B v =
Because electric field direction is (+a
y
)
9. (B)
H
B.I
V
.W
=

H
ne
1 1
K
ne
=
= =

4
6 H
H 3
K BI 10 10 3
V 15 10 V
w 2 10

= = =

10. (A)
d
F Fi
i
N
E E KT n
n
+
| |
=
|
\ .

11. (A)
2
1
R 0
1
2 R 0
V V
C
C V V
+
=
+

( )
1
2
j R 0
C V V

o +
12. (C) Reverse current is independent of biasing in general.
13. (B)
( )
( )
0 v
i
0
I recomb in neutral region q
n e
I recomb in dopletion region 2kT
o
In case of Ge reverse current is independent of Reverse bias but in Si it depends upon rev bias.
In both Ge and Si reverse current is temperature sensitive.
14. (D)
10 v v 0.7
i
1000 500

= =
15. (C)
16. (D)
( )
G
12375
E (eV)

( )
12375
6526or 652nm
1.9
= =
625 740 nm Red
565 595 nm Yellow




17
P N P
B
C E
Metal n-type
Metal
qX
s
E
C
E
FS
Semi-conductor
520 565 nm Green
434 500 nm Blue
17. (B) Photoconductor material should always be intrinsic.
For a photoconductor material should be always intrinsic so that there will be significant
change in the value of conductivity. Response time should be fast and dark conductivity is
also small.
18. (D) Zener occurs at less than 6 V and avalanche breakdown occurs > 6 V.



19. (C)
20. (B) Metal SC diode : metal and n-type semi-conductor



Here n-type will be +ve & metal will be ve.
No depletion layer formation, no current due to metal to semi-conductor here delay due to
recombination is absent.
Since e

plunge into metal with high energy so this is known as hot carrier diode.
It has in this case cut in voltage is smaller than normal diode & reverse current due to
thermionic is higher.
It works like ohmic contact & rectifying contact. If conduction is equal in both the direction
then it is k/a ohmic otherwise rectifying.






N-type :
(1) Ohmic
m s s m
or | < | | > |
(2) Rectifying
s m
| < |
P-type :
(1) Ohmic
s m
| < |
(2) Rectifying
s m
| > |
Heavily doped semiconductor will behave like ohmic and lightly will behave as rectifying.
21. (A) Once SCR is on then gate looses its control & can not be off until anode polarity is changed
or anode current is reduced below holding value.
22. (B) UJT is a current controlled device.
23. (D) Level of integration of MOS device




18
i
a
i
g
K
P
N
P
N
K
A
G
24. (C)
H
t
1
f
2
=
tt

If heavy doping occurs then value of
H
f will (+) so base should be lightly doped.
Due to non-uniform doping there will be external electric field which will support transit of
holes. Hence
H
f will (|).
25. (D) ( )
2 D
B A D B
A
qN
V N N W
2 N
= +
c


A
N collector doping

D
N base doping

B
e base width
26. (B) W
B
must be minimum for higher amplification while W
c
must be maximum so that there is
heat dissipation at the collector
27. (A)
( )
1 2
g CO CO
a
1 2
I I I
i
1
+ +
=
o +o


g
I 0 ~

( )
1 2
9
CO CO
a
1 2
I I
230 10
i
1 1 0.6

+

= =
o +o


9
800 10 A 0.8 A

= =

6
36
R 10
0.8
=
R 45M = O
28. (C) Approximation method is used because value of | is high

2
B
2
R .3
V 0.7 1 0.5 1.2V
R 60
= + = =
+

29. (A)
c
m
T
I
g
V
=
30. (D)
2
p
2
B
2L
| o
e


2
B
1
| o
e

31. (A) There is no need of loading of source.
32. (B) N-type substrate means P-Channel MOSFET. In accumulation mode no channel formation there.
33. (B) Due to absent in minority carriers switch has high speed.
34. (B) When V
DS
is kept 0, and
GS
V 0 = , channel remains flat. If value of
DS
V is
( )
| then depletion
layer will penetrate into n-region & channel will get tapered which will further
( )
| by




19
qV
o
E
CN
E
VN
T
(f)
T
(f) (2f)
increasing the drain voltage. This problem can be solved by
( )
| substrate voltage or body
voltage. This is channel length modulation.
35. (B)
DSS GS
m
p p
2I V
g 1
v v
| |
=
|
|
\ .

36. (C) Threshold voltage should have minimum value.
37. (C) In case of FET value of I
D
(+) with (|) in temp due to two reasons.
If temp is (|) then mobility of concentration carrier will decreased and at the same time by
(|) temp, depletion region of both p and n junction becomes narrow
38. (D) ( )
2
D GS T
I k V V =
Where
n ox
W
k C
2L
| |
=
|
\ .


1 1 2
2 1 2
I W L
I L W

1 1
1 1
L W
2L 2W
1
4
=
=

39. (C)
0 d s
m
1
z V || R ||
g
=
if
d
V

s 0
m
1
R ; z
g
=
40. (C)
41. (B)






42. (B)




43. (A)
44. (C)
C
m
m
T
I
r , g
g
V
t
|
= =




20
A
1
A
2
R
i
R
o
45. (B)
fe
i
oe L
h
A
1 h R

=
+

if
oe L
h R 0.1 <

i fe
oe L
A h
10
h R 0.25
40
=
= =


i
50
A 40
1
1 10
40
= =
+


i ie re i L ie
R h h A R h 1k = + = = O

i L
v
i
A R 40 10
A 400
R 1

= = =
46. (D) CE has miller capacitance effect which limits its efficiency while CB does not have millers
capacitance hence suitable for high frequency.
47. (D)
48. (C)
o
v
L
A
A
f
1 j
f
=
| |

|
\ .
at
L
f f 45 180 = | = + = 225
49. (C)
1
1 2
1 0
R
A A
R R
=
+


1000
2500
1250
=
= 2000
50. (A)
51. (C)
52. (A)
T fe fe
f h f &f (1 h ) f
| o |
= = +
53. (B) Voltage Series Series Shunt
Current Series Series Series
Voltage Shunt Shunt Series
Current Shunt Shunt Shunt
54. (A) Oscillator has positive feedback and emitter follower has voltage series negative feed back
55. (D)
56. (C)
57. (D) In synchronous, both tuned amplifier is at same frequency & net b.w is (+).
While in staggered, both amp
r
. has different frequency & resultant has higher B.W.
58. (B)
59. (A)
60. (C)





21