1

Power Transistors
2SB1531
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2340
I
Features
G Optimum for 40W HiFi output
G High foward current transfer ratio h
FE
: 5000 to 30000
G Low collector to emitter saturation voltage V
CE(sat)
: < 2.5V
I
Absolute Maximum Ratings (T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
130
110
5
10
6
50
2.5
150
55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics (T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 130V, I
E
= 0
V
CE
= 110V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 5mA
I
C
= 5A, I
B
= 5mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 5A, I
B1
= 5mA, I
B2
= 5mA,
V
CC
= 50V
min
110
2000
5000
typ
20
0.9
2.5
1.7
max
100
100
100
30000
2.5
3.0
Unit
A
A
A
V
V
V
MHz
s
s
s
T
C
=25C
Ta=25C
Unit: mm
Internal Connection
B
C
E
4.50.2 15.00.5
13.00.5
2
0
.
0

0
.
3
1
9
.
0

0
.
3
1
5
.
0

0
.
2
S
o
l
d
e
r

D
i
p
4
.
0

0
.
1
4
.
0

0
.
1
1
2
.
5
3
.
5
1
6
.
2

0
.
5
10.50.5
10.90.5
5.450.3
1.10.1
3.20.1
2.00.2
2.00.1
1.40.3
0.60.2
1 2 3
1:Base
2:Collector
3:Emitter
EIAJ:SC65(a)
TOP3 Package(a)
*
h
FE2
Rank classification
Rank Q S P
h
FE2
5000 to 15000 7000 to 21000 8000 to 30000
M
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2
Power Transistors 2SB1531
P
C
Ta I
C
V
CE
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
C
ob
V
CB
t
on
, t
stg
, t
f
I
C
Area of safe operation (ASO)
0 160 40 120 80 140 20 100 60
0
80
60
20
50
70
40
10
30
(1) T
C
=Ta
(2) With a 100 100 2mm
Al heat sink
(3) Without heat sink
(P
C
=2.5W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
o
l
l
e
c
t
o
r

p
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n



P
C



(
W
)
0 12 10 8 2 6 4
0
12
10
8
6
4
2
T
C
=25C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
1mA
I
B
=5mA
Collector to emitter voltage V
CE
(V)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t



I
C



(
A
)
0.1 1 10 100 0.3 3 30
0.1
100
10
1
0.3
3
30
I
C
/I
B
=1000
25C
25C
T
C
=100C
Collector current I
C
(A)
C
o
l
l
e
c
t
o
r

t
o

e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e



V
C
E
(
s
a
t
)



(
V
)
0.1 1 10 100 0.3 3 30
0.1
100
10
1
0.3
3
30
I
C
/I
B
=1000
T
C
=25C
25C
100C
Collector current I
C
(A)
B
a
s
e

t
o

e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e



V
B
E
(
s
a
t
)



(
V
)
0.01 0.1 1 10 0.03 0.3 3
10
10
2
10
3
10
4
10
5
V
CE
=5V
TC=100C
25C
25C
Collector current I
C
(A)
F
o
r
w
a
r
d

c
u
r
r
e
n
t

t
r
a
n
s
f
e
r

r
a
t
i
o



h
F
E
1 3 10 30 100
1
1000
100
10
3
30
300
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
C
o
l
l
e
c
t
o
r

o
u
t
p
u
t

c
a
p
a
c
i
t
a
n
c
e



C
o
b



(
p
F
)
0 16 4 12 8
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=1000
(I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
Collector current I
C
(A)
S
w
i
t
c
h
i
n
g

t
i
m
e



t
o
n
,
t
s
t
g
,
t
f



(

s
)
1 10 100 1000 3 30 300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
CP
I
C
10ms
t=1ms
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t



I
C



(
A
)
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3
Power Transistors 2SB1531
R
th(t)
t
10
4
10 10
3
10
1
10
2
1 10
3
10
2
10
4
10
1
1
10
10
2
10
4
10
3
Note: R
th
was measured at Ta=25C and under natural convection.
(1) P
T
=10V 0.2A (2W) and without heat sink
(2) P
T
=10V 1.0A (10W) and with a 100 100 2mm Al heat sink
(1)
(2)
Time t (s)
T
h
e
r
m
a
l

r
e
s
i
s
t
a
n
c
e



R
t
h
(
t
)



(

C
/
W
)
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Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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