Power Mosfet

TMOS Power MOSFET Transistor Device Data
Alphanumeric Index of Part Numbers 1
Selector Guide
Introduction to Power MOSFETs

Basic Characteristics of Power MOSFETs
Data Sheets
Surface Mount Package Information and

Tape and Reel Specifications
Package Outline Dimensions and Footprints
Distributors and Sales Offices
Designers, SENSEFET, EFETs, ICePAK, HDTMOS, MiniMOS, SMARTDISCRETES,

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Motorola, Inc. 1996

Previous Edition 1994
All Rights Reserved
Printed in U.S.A.
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1 2 3
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1 2 3
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1 2 3 4
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REV 1
Table of Contents
MMDF2C01HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF2C02E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF2C02HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF2C03HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF2N02E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF2P01HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF2P02E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF2P02HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF2P03HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF3N02HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF3N03HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF4N01HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMDF4N01Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMFT1N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMFT2N02EL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMFT2955E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMFT3055V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMFT3055VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMSF2P02E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMSF3P02HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMSF3P02Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMSF3P03HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMSF4P01HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMSF4P01Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMSF5N02HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMSF5N03HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMSF5N03Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMSF7N03HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MPIC2111 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MPIC2112 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MPIC2113 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MPIC2117 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MPIC2130 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MPIC2131 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MPIC2151 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB1N100E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB2N40E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB2N60E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB2P50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB3N100E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB3N120E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB4N80E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB6N60E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB8N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB9N25E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB10N40E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB15N06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB16N25E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB20N20E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB23P06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB30N06VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB30P06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB33N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB35N06ZL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB36N06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB50P03HDL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB52N06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB52N06VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB55N06Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB60N06HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SECTION ONE
Alphanumeric Index of Part Numbers
Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Obsolete Part Numbers Cross Reference . . . . . . . . . . . . 13
SECTION TWO
Selector Guide
TMOS Power MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . 21
TMOS Power MOSFETs Numbering System . . . . . . 22
SO8 (MiniMOS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Micro8 HDTMOS Products . . . . . . . . . . . . . . . . . . . . 23
EZFET Power MOSFETs with Zener Gate
Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
SOT223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DPAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
D2PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
D3PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
TO220AB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
TO247 (Isolated Mounting Hole) . . . . . . . . . . . . . . . . 28
TO264 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
SOT227B (ISOTOP) . . . . . . . . . . . . . . . . . . . . . . . . . 29
SMARTDISCRETES . . . . . . . . . . . . . . . . . . . . . . . . . . 29
IGBT Insulated Gate Bipolar Transistor . . . . . . . . 210
Power MOS Gate Drivers . . . . . . . . . . . . . . . . . . . . . . 210
SECTION THREE
Chapter 1: Introduction to Power MOSFETs
Symbols, Terms and Definitions . . . . . . . . . . . . . . . . . . 32
Basic TMOS Structure, Operation and Physics . . . . . 37
Distinct Advantages of Power MOSFETs . . . . . . . . . 310
Chapter 2: Basic Characteristics of Power MOSFETs
Output Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 313
Basic MOSFET Parameters . . . . . . . . . . . . . . . . . . . . . 313
Temperature Dependent Characteristics . . . . . . . . . . 314
Drain-Source Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315
Chapter 3: The Data Sheet . . . . . . . . . . . . . . . . . . . . . . . 317
SECTION FOUR Data Sheets

MC33153 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
MGP20N14CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 413
MGP20N35CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 415
MGP20N40CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420
MGW12N120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 425
MGW12N120D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 430
MGW20N60D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 435
MGW20N120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 440
MGW30N60 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 445
MGY20N120D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 449
MGY25N120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 454
MGY25N120D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 459
MGY30N60D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 464
MGY40N60 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 469
MGY40N60D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 473
MLD1N06CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 478
MLD2N06CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 484
MLP1N06CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 490
MLP2N06CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 496
MMDF1N05E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4102
vi
4106
4115
4123
4132
4141
4147
4154
4160
4167
4174
4181
4187
4194
4196
4202
4208
4214
4216
4218
4224
4231
4238
4245
4252
4259
4266
4273
4280
4287
4291
4295
4299
4303
4308
4313
4317
4323
4329
4335
4341
4347
4354
4360
4366
4368
4374
4380
4386
4392
4398
4404
4410
4416
4422
4424
4430
4437
4439
4441
4443
Table of Contents (continued)

MTP9N25E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4783
MTP10N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4789
MTP10N10EL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4795
MTP10N40E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4801
MTP12N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4807
MTP12P10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4813
MTP15N06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4818
MTP15N06VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4824
MTP16N25E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4826
MTP20N06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4832
MTP20N20E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4834
MTP23P06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4840
MTP27N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4846
MTP30N06VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4852
MTP30P06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4858
MTP33N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4864
MTP35N06ZL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4870
MTP36N06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4872
MTP50P03HDL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4878
MTP52N06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4885
MTP52N06VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4887
MTP55N06Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4889
MTP60N06HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4891
MTP75N03HDL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4898
MTP75N05HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4905
MTP75N06HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4911
MTP2955V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4918
MTP3055V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4920
MTP3055VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4926
MTSF1P02HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4932
MTSF2P02HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4940
MTSF3N02HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4943
MTSF3N03HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4951
MTV6N100E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4959
MTV10N100E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4965
MTV16N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4971
MTV20N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4977
MTV25N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4983
MTV32N20E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4989
MTV32N25E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4995
MTW6N100E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41001
MTW7N80E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41007
MTW8N60E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41013
MTW10N100E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41019
MTW14N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41025
MTW16N40E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41031
MTW20N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41037
MTW24N40E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41043
MTW32N20E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41049
MTW32N25E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41055
MTW35N15E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41061
MTW45N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41067
MTY14N100E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41073
MTY16N80E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41079
MTY20N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41085
MTY25N60E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41091
MTY30N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41097
MTY55N20E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41103
MTY100N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41109
SECTION FOUR Data Sheets (continued)

MTB75N03HDL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTB75N05HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD1N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD1N60E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD1N80E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD1P50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD2N40E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD2N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD3N25E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD4N20E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD5N25E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD5P06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD6N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD6N15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD6N20E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD6P10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD9N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD10N10EL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD12N06EZL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD15N06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD15N06VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD20N03HDL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD20N06HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD20N06HDL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD20N06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD20P03HDL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD20P06HDL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD2955V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD3055V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTD3055VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTDF1N02HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTDF1N03HD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTE30N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTE53N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTE125N20E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTE215N10E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP1N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP1N60E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP1N80E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP1N100E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP2N40E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP2N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP2N60E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP2P50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP3N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP3N60E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP3N100E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP3N120E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP4N40E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP4N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP4N80E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP5N40E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP5P06V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP6N60E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP6P20E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP7N20E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MTP8N50E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4450
4457
4464
4470
4476
4482
4484
4490
4496
4502
4508
4514
4520
4526
4531
4537
4543
4549
4555
4561
4567
4569
4576
4583
4590
4592
4599
4606
4608
4614
4620
4628
4636
4642
4648
4654
4660
4666
4672
4678
4684
4690
4696
4702
4708
4714
4720
4726
4733
4735
4741
4747
4753
4759
4765
4771
4777
vii
SECTION FIVE
Surface Mount Package Information
and Tape and Reel Specifications
Surface Mount Package Information . . . . . . . . . . . . . . . .
Power Dissipation for a Surface Mount Device . . . . .
Solder Stencil Guidelines . . . . . . . . . . . . . . . . . . . . . . .
Soldering Precautions . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Solder Heating Profile . . . . . . . . . . . . . . . . . . .
Footprints for Soldering . . . . . . . . . . . . . . . . . . . . . . . . .
Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . . .
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . .
Embossed Tape and Reel Data . . . . . . . . . . . . . . . . . .
SECTION SIX
Package Outline Dimensions and Footprints . . . . . . . . . 62
52
52
53
53
54
55
56
56
57
SECTION SEVEN
Distributors and Sales Offices . . . . . . . . . . . . . . . . . . . . . . 72
viii
Section One
Alphanumeric Index of Part Numbers . . . . . . . . . . . . . . . 12

Obsolete Part Numbers Cross Reference . . . . . . . . . . . . 13
Motorola TMOS Power MOSFET Transistors Device Data

11
The following index provides you with a quick page number reference for complete data sheets. Contact your local Motorola
Sales Office for data sheets not referenced in this index.
Motorola
Part Number
MC33153
MGP20N14CL
MGP20N35CL
MGP20N40CL
MGW12N120
MGW12N120D
MGW20N60D
MGW20N120
MGW30N60
MGY20N120D
MGY25N120
MGY25N120D
MGY30N60D
MGY40N60
MGY40N60D
MLD1N06CL
MLD2N06CL
MLP1N06CL
MLP2N06CL
MMDF1N05E
MMDF2C01HD
MMDF2C02E
MMDF2C02HD
MMDF2C03HD
MMDF2N02E
MMDF2P01HD
MMDF2P02E
MMDF2P02HD
MMDF2P03HD
MMDF3N02HD
MMDF3N03HD
MMDF4N01HD
MMDF4N01Z
MMFT1N10E
MMFT2N02EL
MMFT2955E
MMFT3055V
MMFT3055VL
MMSF2P02E
MMSF3P02HD
MMSF3P02Z
MMSF3P03HD
MMSF4P01HD
MMSF4P01Z
MMSF5N02HD
MMSF5N03HD
MMSF5N03Z
MMSF7N03HD
MPIC2111
MPIC2112
MPIC2113
MPIC2117
MPIC2130
MPIC2131
MPIC2151
Data Sheet
Page Number
42
413
415
420
425
430
435
440
445
449
454
459
464
469
473
478
484
490
496
4102
4106
4115
4123
4132
4141
4147
4154
4160
4167
4174
4181
4187
4194
4196
4202
4208
4214
4216
4218
4224
4231
4238
4245
4252
4259
4266
4273
4280
4287
4291
4295
4299
4303
4308
4313

12
Motorola
Part Number
MTB1N100E
MTB2N40E
MTB2N60E
MTB2P50E
MTB3N100E
MTB3N120E
MTB4N80E
MTB6N60E
MTB8N50E
MTB9N25E
MTB10N40E
MTB15N06V
MTB16N25E
MTB20N20E
MTB23P06V
MTB30N06VL
MTB30P06V
MTB33N10E
MTB35N06ZL
MTB36N06V
MTB50P03HDL
MTB52N06V
MTB52N06VL
MTB55N06Z
MTB60N06HD
MTB75N03HDL
MTB75N05HD
MTD1N50E
MTD1N60E
MTD1N80E
MTD1P50E
MTD2N40E
MTD2N50E
MTD3N25E
MTD4N20E
MTD5N25E
MTD5P06V
MTD6N10E
MTD6N15
MTD6N20E
MTD6P10E
MTD9N10E
MTD10N10EL
MTD12N06EZL
MTD15N06V
MTD15N06VL
MTD20N03HDL
MTD20N06HD
MTD20N06HDL
MTD20N06V
MTD20P03HDL
MTD20P06HDL
MTD2955V
MTD3055V
MTD3055VL
Data Sheet
Page Number
4317
4323
4329
4335
4341
4347
4354
4360
4366
4368
4374
4380
4386
4392
4398
4404
4410
4416
4422
4424
4430
4437
4439
4441
4443
4450
4457
4464
4470
4476
4482
4484
4490
4496
4502
4508
4514
4520
4526
4531
4537
4543
4549
4555
4561
4567
4569
4576
4583
4590
4592
4599
4606
4608
4614
Motorola
Part Number
MTDF1N02HD
MTDF1N03HD
MTE30N50E
MTE53N50E
MTE125N20E
MTE215N10E
MTP1N50E
MTP1N60E
MTP1N80E
MTP1N100E
MTP2N40E
MTP2N50E
MTP2N60E
MTP2P50E
MTP3N50E
MTP3N60E
MTP3N100E
MTP3N120E
MTP4N40E
MTP4N50E
MTP4N80E
MTP5N40E
MTP5P06V
MTP6N60E
MTP6P20E
MTP7N20E
MTP8N50E
MTP9N25E
MTP10N10E
MTP10N10EL
MTP10N40E
MTP12N10E
MTP12P10
MTP15N06V
MTP15N06VL
MTP16N25E
MTP20N06V
MTP20N20E
MTP23P06V
MTP27N10E
MTP30N06VL
MTP30P06V
MTP33N10E
MTP35N06ZL
MTP36N06V
MTP50P03HDL
MTP52N06V
MTP52N06VL
MTP55N06Z
MTP60N06HD
MTP75N03HDL
MTP75N05HD
MTP75N06HD
MTP2955V
MTP3055V
Data Sheet
Page Number
4620
4628
4636
4642
4648
4654
4660
4666
4672
4678
4684
4690
4696
4702
4708
4714
4720
4726
4733
4735
4741
4747
4753
4759
4765
4771
4777
4783
4789
4795
4801
4807
4813
4818
4824
4826
4832
4834
4840
4846
4852
4858
4864
4870
4872
4878
4885
4887
4889
4891
4898
4905
4911
4918
4920
Motorola TMOS Power MOSFET Transistor Device Data
ALPHANUMERIC INDEX OF PART NUMBERS (continued)

Motorola
Part Number
MTP3055VL
MTSF1P02HD
MTSF2P02HD
MTSF3N02HD
MTSF3N03HD
MTV6N100E
MTV10N100E
MTV16N50E
MTV20N50E
MTV25N50E
MTV32N20E
Data Sheet
Page Number
4926
4932
4940
4943
4951
4959
4965
4971
4977
4983
4989
Motorola
Part Number
MTV32N25E
MTW6N100E
MTW7N80E
MTW8N60E
MTW10N100E
MTW14N50E
MTW16N40E
MTW20N50E
MTW24N40E
MTW32N20E
Data Sheet
Page Number
Motorola
Part Number
MTW32N25E
MTW35N15E
MTW45N10E
MTY14N100E
MTY16N80E
MTY20N50E
MTY25N60E
MTY30N50E
MTY55N20E
MTY100N10E
4995
41001
41007
41013
41019
41025
41031
41037
41043
41049
Data Sheet
Page Number
41055
41061
41067
41073
41079
41085
41091
41097
41103
41109
Obsolete Part Numbers Cross Reference

Old Part
Number
BUZ11
BUZ71
BUZ71A
IRF510
IRF520
IRF530
IRF540
IRF610
IRF620
IRF630
IRF640
IRF720
IRF730
IRF740
IRF820
IRF840
New Part
Number
MTP36N06V
MTP15N06V
MTP15N06V
MTP10N10E
MTP10N10E
MTP12N10E
MTP27N10E
MTP7N20E
MTP7N20E
MTP20N20E
MTP20N20E
MTP4N40E
MTP5N40E
MTP10N40E
MTP3N50E
MTP8N50E
Old Part
Number
IRFZ20
MMFT3055E
MMFT3055EL
MTB15N06E
MTB23P06E
MTB30N06EL
MTB36N06E
MTB50N06E
MTB50N06EL
MTD5P06E
MTD8N06E
MTD10N05E
MTD2955E
MTD3055E
MTD3055EL
MTP3N25E
New Part
Number
MTP15N06V
MMFT3055V
MMFT3055VL
MTB15N06V
MTB23P06V
MTB30N06VL
MTB36N06V
MTB50N06V
MTB50N06VL
MTD5P06V
MTD15N06V
MTD15N06V
MTD2955V
MTD3055V
MTD3055VL
MTP9N25E
Old Part
Number
MTP8N06E
MTP15N05E
MTP15N05EL
MTP15N06E
MTP23P06
MTP30N06EL
MTP36N06E
MTP50N05E
MTP50N05EL
MTP50N06E
MTP2955E
MTP3055E
MTP3055EL
MTW20P10
MTW23N25E
MTW26N15E
MTW54N05E
New Part
Number
MTP15N06V
MTP15N06V
MTP15N06VL
MTP15N06V
MTP23P06V
MTP30N06VL
MTP36N06V
MTP50N06V
MTP50N06VL
MTP50N06V
MTP2955V
MTP3055V
MTP3055VL
MTP12P10
MTW32N25E
MTW35N15E
MTP50N06V

13

14
Section Two
TMOS Power MOSFETs
Products Selector Guide
In Brief . . .
Motorola continues to build a world class portfolio of
TMOS Power MOSFETs with new advances in silicon and
packaging technology. The following new advances have
been made in the area of silicon technology.
Additional high voltage devices with voltages up to
1200 volts.
The new High Cell Density (HDTMOS) Family of standard
and Logic Level devices in both N and P-channel are
available in SO8, DPAK and D2PAK surface mount
packages and in the industry standard TO-220 package.
The following new advances have been made in the area
of packaging technology.
Motorola has added Micro8, SO-8 (MiniMOS) and
SOT-223 packages to the surface mount portfolio.
New High Power packages capable of housing very large
die and higher power dissipation are now available in the
TO-264 (TO-3PBL) and SOT-227B (ISOTOP) packages.
Table of Contents
Page
TMOS Power MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
TMOS Power MOSFETs Numbering System . . . . . . . 22
SO8 (MiniMOS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Micro8 HDTMOS Products . . . . . . . . . . . . . . . . . . . . . 23
EZFET Power MOSFETs with Zener Gate
Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
SOT223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DPAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
D2PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
D3PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
TO220AB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
TO247 (Isolated Mounting Hole) . . . . . . . . . . . . . . . . . 28
TO264 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
SOT227B (ISOTOP) . . . . . . . . . . . . . . . . . . . . . . . . . . 29
SMARTDISCRETES . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
IGBT Insulated Gate Bipolar Transistor . . . . . . . . 210
Power MOS Gate Drivers . . . . . . . . . . . . . . . . . . . . . . 210
Selector Guide
21
TMOS
Power MOSFETs
TMOS Power MOSFETs Numbering System

Wherever possible, Motorola has used the following numbering systems for TMOS power MOSFET products.
MTP75N06HD
MOTOROLA
X FOR ENGINEERING SAMPLES
TMOS
T FOR TMOS
L FOR SMARTDISCRETES
G FOR IGBT
P FOR MULTIPLE CHIP PRODUCTS
OPTIONAL SUFFIX:
L FOR LOGIC LEVEL
E FOR ENERGY RATED
T4 FOR TAPE & REEL (DPAK/D2PAK)
RL FOR TAPE & REEL (DPAK/D3PAK)
HD FOR HIGH CELL DENSITY
V FOR TMOS V (FIVE)
PACKAGE TYPE
P FOR PLASTIC TO220
D FOR DPAK
A FOR TO220 ISOLATED
W FOR TO247
B FOR D2PAK
Y FOR TO264
E FOR SOT227B
V FOR D3PAK
VOLTAGE RATING DIVIDED BY 10

CHANNEL POLARITY, N OR P
Example of exceptions: MTD/MTP3055E

CURRENT
SO8 (MiniMOS), Micro8 and SOT223 Power MOSFETs

MMSF4P01HDR1
MOTOROLA
R2 FOR TAPE & REEL MiniMOS, Micro8

T1 AND T3 FOR TAPE & REEL SOT223
PACKAGE TYPE
MMDF DUAL FET (SO8)
MMSF SINGLE FET (SO8)
MMFT FET TRANSISTOR (SOT223)
MTSF SINGLE FET (Micro8)
MTDF DUAL FET (Micro8)
OPTIONAL SUFFIX:
E FOR ENERGY RATED
L FOR LOGIC LEVEL
Z FOR ESD GATE PROTECTION
CURRENT

C FOR COMPLEMENTARY
Selector Guide
22
TM
SO8 (MiniMOS)
V(BR)DSS
(V)
RDS(on) @ VGS
10 V
(m)
ID
4.5 V
(m)
2.7 V
(m)
(A)
Device (5)
Package
Type
(3)PD (3)
(Watts)
Max
Table 1. SO8 NChannel

50
300
500
1.5
MMDF1N05E
SO8
2.0
40
80
100
3.4
MMDF3N04HD
SO8
2.0
30
28
40
70
70/200(11)
40
50
75
75/300
8
5
2.8
2
MMSF7N03HD
MMSF5N03HD
MMDF3N03HD
MMDF2C03HD
SO8
SO8
SO8
SO8
2.5
2.5
2.0
2.0
20
25
90
100
90/160(11)
100/250(11)
40
100
200
100/180(11)
200/400(11)
5
3
2
2
2
MMSF5N02HD
MMDF3N02HD
MMDF2N02E
MMDF2C02HD
MMDF2C02E
SO8
SO8
SO8
SO8
SO8
2.5
2.0
2.0
2.0
2.0
12
45
45/180
55
55/220(11)
4
2
MMDF4N01HD
MMDF2C01HD
SO8
SO8
2.0
2.0
Table 2. SO8 PChannel

30
100
200
110
300
3
2
MMSF3P03HD
MMDF2P03HD
SO8
SO8
2.5
2.0
20
75
160
250
250
95
180
400
400
3
2
2
2
MMSF3P02HD
MMDF2P02HD
MMDF2P02E
MMSF2P02E
SO8
SO8
SO8
SO8
2.5
2.0
2.0
2.0
12
100
180
110
220
4
2
MMSF4P01HD
MMDF2P01HD
SO8
SO8
2.5
2.0
1(3) Power rating when mounted on an FR4 glass epoxy printed circuit board with the minimum recommended footprint.
1(5) Available in tape and reel only R1 suffix = 500/reel, R2 suffix = 2500/reel.
(11) NChannel/PChannel R
DS(on)
Micro8 HDTMOS Products

V(BR)DSS
(Volts)
Min
RDS(on)
(mW)
Max
VGS
(Volts)
ID
(cont)
Amps
Device
Product
Description
Table 3. N Channel and P Channel

20
190
2.7
200
30
75
4.5
225
MTSF1P02HD
Single P Channel
1.5
MTDF1N02HD
Dual N Channel
MTSF3N03HD
Single N Channel
1.5
MTDF1N03HD
Dual N Channel
Devices listed in bold, italic are Motorola preferred devices.
Selector Guide
23
EZFET Power MOSFETs with Zener Gate Protection

RDS(on)
(mW)
Max
V(BR)DSS
(Volts)
Min
Description
VGS
(Volts)
10 V
4.5 V
2.7 V
ID
(cont)
Amps
Device
Table 4. SO 8 N Channel
20
Single NChannel
22
27
MMSF6N02Z
30
Single NChannel
35
30
MMSF5N03Z
50
Dual NChannel
300
500
MMDF2N05Z
60
NChannel
18
55
MTP55N06Z
MTB55N06Z
26
28
35
MTP35N06ZL
VGS
(Volts)
Max
"10
"15
"20
"15
MTB35N06ZL
Package
PD(3)
(Watts)
Max
SO8
1.6
TO220
D2PAK
136
TO220
D2PAK
94
3
3
SOT223
V(BR)DSS
(Volts)
Min
RDS(on)
(Ohms)
Max
ID
(Amps)
Device (12)
ID
(cont)
Amps
PD(1)
(Watts)
Max
0.8(3)
Table 5. SOT223 NChannel

100
0.30
0.5
MMFT1N10E
60
0.14
0.75
MMFT3055VL(2)
1.5
0.13
0.85
MMFT3055V
1.7
0.15
20
MMFT2N02EL(2)
Table 6. SOT223 PChannel

60
0.30
MMFT2955E
0.6
1.2
0.8(3)
ID
(cont)
Amps
PD(1)
(Watts)
Max
1.75(3)
1(1) T = 25C
C
1(2) Indicates logic level
1(3) Power rating when mounted on an FR4 glass epoxy printed circuit board with the minimum recommended footprint.
(12) Available in tape and reel only T1 suffix = 1000/reel, T3 suffix = 4000/reel.
DPAK
V(BR)DSS
(Volts)
Min
RDS(on)
(Ohms)
Max
ID
(Amps)
Device (4)
Table 7. DPAK NChannel

800
12
0.5
MTD1N80E
600
0.5
MTD1N60E
500
0.5
MTD1N50E
3.60
MTD2N50E
400
3.50
MTD2N40E
250
1.40
1.5
MTD3N25E
2.5
MTD5N25E
200
1.5
1.5
MTD3N20E
1.20
MTD4N20E
0.70
MTD6N20E
0.30
MTD6N15
150
(1) T = 25C
C
(3) Power rating when mounted on an FR4 glass epoxy printed circuit board with the minimum recommended footprint.
(4) Available in tape and reel add T4 suffix to part number.
(continued)
Selector Guide
24
DPAK (continued)
RDS(on)
(Ohms)
Max
V(BR)DSS
(Volts)
Min
ID
(Amps)
Device (4)
ID
(cont)
Amps
PD(1)
(Watts)
Max
1.75(3)
Table 7. DPAK NChannel (continued)

100
60
0.40
MTD6N10E
0.25
4.5
MTD9N10E
0.22
MTD10N10EL
10
MTD14N10E
14
0.15
MTD3055V
0.18
MTD3055VL(2)
12
0.18
MTD12N06EZL(2)(13)
12
0.12
7.5
MTD15N06V
15
0.085
7.5
MTD15N06VL(2)
15
0.045
10
MTD20N06HD
20
0.045
10
MTD20N06HDL(2)
20
0.080
10
MTD20N06V
20
0.035
10
MTD20N03HDL(2)
20
500
15.0
0.5
MTD1P50E
100
0.66
MTD6P10E
60
0.45
2.5
MTD5P06V
0.30
MTD2955V
12
0.15
10
20
0.099
10
MTD20P06HDL(2)
MTD20P03HDL(2)
30
Table 8. DPAK PChannel
30
1.75(3)
19
(1) T = 25C
C
(2) Indicates logic level
(13) ESD protected to 4 kV.
D2PAK
V(BR)DSS
(Volts)
Min
RDS(on)
(Ohms)
Max
ID
(Amps)
Device (4)
ID
(cont)
Amps
PD(1)
(Watts)
Max
2.5(3)
Table 9. D2PAK NChannel

1200
5.0
1.5
MTB3N120E
1000
0.5
MTB1N100E
1.5
MTB3N100E
800
MTB4N80E
600
1.20
MTB6N60E
4.16
MTB2N60E
500
0.80
MTB8N50E
400
3.50
MTB2N40E
0.55
MTB10N40E
10
0.50
4.5
MTB9N25E
0.25
MTB16N25E
16
250
(1) T = 25C
C
(continued)
Selector Guide
25
D2PAK (continued)
V(BR)DSS
(Volts)
Min
RDS(on)
(Ohms)
Max
ID
(Amps)
Device (4)
ID
(cont)
Amps
PD(1)
(Watts)
Max
2.5(3)
Table 9. D2PAK NChannel (continued)

200
0.16
10
MTB20N20E
20
100
0.060
16.5
MTB33N10E
33
60
0.12
7.5
MTB15N06V
15
0.05
15
MTB30N06VL(2)
30
0.026
17.5
MTB35N06ZL
35
0.04
18
MTB36N06V
32
0.032
21
MTB50N06VL(2)
42
0.028
21
MTB50N06V
42
0.024
26
52
0.018
27.5
MTB52N06VL(2)
MTB55N06Z (13)
0.022
26
MTB56N06V
52
0.014
30
MTB60N06HD
60
0.01
37.5
MTB75N06HD
75
0.0095
37.5
MTB75N05HD
75
37.5
MTB75N03HDL(2)
75
50
25
0.009
55
Table 10. D2PAK PChannel

500
MTB2P50E
60
0.12
11.5
MTB23P06V
23
0.080
15
MTB30P06V
30
0.025
25
MTB50P03HDL(2)
50
30
2.5(3)
(1) T = 25C
C
(13) ESD protected to 4 kV.
D3PAK
V(BR)DSS
(Volts)
Min
RDS(on)
(Ohms)
Max
ID
(Amps)
Device (4)
ID
(cont)
Amps
PD(1)
(Watts)
Max
Table 11. D3PAK NChannel

1.50
MTV6N100E
178
1.30
MTV10N100E
10
250
0.400
MTV16N50E
16
250
0.240
10
MTV20N50E
20
250
0.200
12.5
MTV25N50E
25
250
250
0.080
16
MTV32N25E
32
250
200
0.075
16
MTV32N20E
32
180
1000
500
(1) T = 25C
C
Selector Guide
26
TO220AB
V(BR)DSS
(Volts)
Min
RDS(on)
(Ohms)
Max
ID
(Amps)
Device
ID
(cont)
Amps
PD(1)
(Watts)
Max
125
Table 12. TO220AB NChannel

1200
5.0
1.5
MTP3N120E
1000
0.5
MTP1N100E
75
4.0
1.5
MTP3N100E
125
12
MTP1N80E
48
MTP4N80E
125
0.5
MTP1N60E
50
3.80
MTP2N60E
2.20
1.5
MTP3N60E
75
1.20
MTP6N60E
125
0.5
MTP1N50E
50
3.60
MTP2N50E
75
1.5
MTP3N50E
50
1.50
MTP4N50E
75
0.80
MTP8N50E
125
3.50
MTP2N40E
50
1.80
MTP4N40E
800
600
500
400
250
200
100
60
50
25
2.5
MTP5N40E
75
0.55
MTP10N40E
10
125
0.5
4.5
MTP9N25E
75
0.25
MTP16N25E
16
125
0.70
3.5
MTP7N20E
75
0.16
10
MTP20N20E
20
125
0.25
MTP10N10E
10
75
0.22
MTP10N10EL
10
40
0.16
MTP12N10E
12
75
0.070
13.5
MTP27N10E
27
125
0.060
16.5
150
MTP33N10E
MTP3055VL(2)
33
0.18
12
48
0.15
MTP3055V
12
0.12
7.5
MTP15N06V
15
0.085
7.5
MTP15N06VL
15
0.080
10
MTP20N06V
20
0.05
15
MTP30N06VL(2)
30
0.026
17.5
MTP35N06ZL
35
0.04
18
MTP36N06V
32
90
0.032
21
MTP50N06VL(2)
42
150
0.028
21
MTP50N06V
42
0.022
26
MTP52N06V
52
0.024
26
MTP52N06VL
52
0.018
22.5
MTP55N06Z
55
0.014
30
MTP60N06HD
60
0.01
37.5
MTP75N06HD
75
0.0095
37.5
MTP75N05HD
75
37.5
MTP75N03HDL(2)
75
0.009
(1) T = 25C
C
60
90
94
(continued)
Selector Guide
27
TO220AB (continued)
RDS(on)
(Ohms)
Max
V(BR)DSS
(Volts)
Min
ID
(Amps)
Device
ID
(cont)
Amps
PD(1)
(Watts)
Max
75
Table 13. TO220AB PChannel

500
MTP2P50E
200
MTP6P20E
100
0.30
MTP12P10
12
88
60
0.45
2.5
MTP5P06V
40
0.30
MTP2955V
12
60
0.12
11.5
MTP23P06V
23
125
0.08
15
MTP30P06V
30
125
25
MTP50P03HDL (2)
50
150
30
0.025
(1) T = 25C
C
TO247 (Isolated Mounting Hole)

V(BR)DSS
(Volts)
Min
RDS(on)
(Ohms)
Max
ID
(Amps)
Device
ID
(cont)
Amps
PD(1)
(Watts)
Max
Table 14. TO247 NChannel

1.50
MTW6N100E
180
1.30
MTW10N100E
10
250
800
3.5
MTW7N80E
180
600
0.55
MTW8N60E
180
500
0.40
MTW14N50E
14
180
0.24
10
MTW20N50E
20
250
0.24
MTW16N40E
16
180
0.16
12
MTW24N40E
24
250
250
0.08
16
MTW32N25E
32
250
200
0.075
16
MTW32N20E
32
180
150
0.05
17.5
MTW35N15E
35
180
100
0.035
22.5
MTW45N10E
45
180
1000
400
(1) T = 25C
C
TO264
V(BR)DSS
(Volts)
Min
RDS(on)
(Ohms)
Max
ID
(Amps)
Device
ID
(cont)
Amps
PD(1)
(Watts)
Max
Table 15. TO264 NChannel

7
MTY14N100E
14
568
0.50
MTY16N80E
16
568
0.21
12.5
MTY25N60E
25
568
500
0.26
10
MTY20N50E
20
300
0.15
15
MTY30N50E
30
568
200
0.028
27.5
MTY55N20E
55
568
100
0.011
50
MTY100N10E
100
568
1000
0.80
800
600
(1) T = 25C
C
Selector Guide
28
SOT227B (ISOTOP)
V(BR)DSS
(Volts)
Min
RDS(on)
(Ohms)
Max
ID
(Amps)
Device
ID
(cont)
Amps
PD(1)
(Watts)
Max
30
250
Table 16. SOT227B (ISOTOP)

500
0.15
15
MTE30N50E
0.08
26.5
MTE53N50E
53
460
200
0.015
62.5
MTE125N20E
125
460
100
0.0055
107
MTE215N10E
215
460
(1) T = 25C
C
Indicates UL Recognition File #E69369
SMARTDISCRETES
Table 17. Ignition IGBTs
BVCES (Volts)
Clamped
VCE(on)
@ 10 A
Device
PD(1)
(Watts) Max
Package
140 V
1.8
MGP20N14CL
150
TO220AB
350 V
1.8
MGP20N35CL
MGB20N35CL
150
2.5(3)(4)
TO220AB
D2PAK
400 V
1.8
MGP20N40CL
MGB20N40CL
150
2.5(3)(4)
TO220AB
D2PAK
Table 18. TO220AB

V(BR)DSS
(Volts) Min
RDS(on)
(Ohms) Max
ID
(Amps)
Device
ID (cont)
Amps
PD(1)
(Watts) Max
60 Clamped Voltage
0.75
MLP1N06CL
Current Limited
40
62 Clamped Voltage
0.4
MLP2N06CL
Current Limited
40
V(BR)DSS
(Volts) Min
RDS(on)
(Ohms) Max
ID
(Amps)
Device
ID (cont)
Amps
PD(1)
(Watts) Max
60 Clamped Voltage
0.75
MLD1N06CL
Current Limited
1.75
62 Clamped Voltage
0.4
MLD2N06CL
Current Limited
1.75
Table 19. DPAK
(1) T = 25C
C
Selector Guide
29
IGBT Insulated Gate Bipolar Transistor

Device
BVCES
IC90
(A)
IC
@ 25C
(A)
VCE(on) @ IC90
(V)
typ
Eoff @ IC90
(mJ)
typ @ 125C
(V)
Package
20
32
2.90
1.20
TO220
30
50
2.60
1.80
40
66
2.60
2.40
TO264
12
20
3.10
1.43
TO247
25
38
2.90
4.29
TO264
Table 20. IGBT NChannel

MGP20N60
600
MGW20N60D
TO247
MGW30N60
TO247
MGY30N60D
TO264
MGY40N60
MGY40N60D
MGW10N120
1200
MGW10N120D
MGY25N120
MGY25N120D
IC90 = Collector current rating at 90C case temperature
Power MOS Gate Drivers

Device
Description
Package
Table 21.
8 Pin SOIC
MC33153P
VCCVEE = 23 V, 1 A Source, 2 A Sink Low Side Driver

(Can be used as High Side Driver with Optocoupler)
MPIC2111D
600 V, 420 mA, Half Bridge Driver
8 Pin SOIC
MC33153D
MPIC2111P
MPIC2112DW
8 Pin PDIP
600 V, 420 mA, Half Bridge Driver
16 Pin SOICWide
MPIC2112P
MPIC2113DW
14 Pin PDIP
600 V, 2 A, Half Bridge Driver
16 Pin SOICWide
MPIC2113P
MPIC2117D
14 Pin PDIP
600 V, 420 mA, High Side Driver
8 Pin SOIC
MPIC2117P
MPIC2130P
8 Pin PDIP
600 V, 420 mA, Three Phase Driver
28 Pin PDIP
MPIC2130FN
MPIC2131P
44 Pin PLCC (modified)

600 V, 420 mA, Three Phase Driver
28 Pin PDIP
MPIC2131FN
MPIC2151D
8 Pin PDIP
44 Pin PLCC (modified)

600 V, 210 mA, Self Oscillating, Half Bridge Driver
MPIC2151P
8 Pin SOIC
8 Pin PDIP
Selector Guide
210
Section Three
Table of Contents
Symbols, Terms and Definitions . . . . . . . . . . . . . . . . . . 32
Basic TMOS Structure, Operation and Physics . . . . . 37
Distinct Advantages of Power MOSFETs . . . . . . . . . 310
Output Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 313
Basic MOSFET Parameters . . . . . . . . . . . . . . . . . . . . . 313
Temperature Dependent Characteristics . . . . . . . . . . 314
Drain-Source Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315
Chapter 3: The Data Sheet . . . . . . . . . . . . . . . . . . . . . . 317
Introduction and Basic Characteristics

31

Symbols, Terms and Definitions
The following are the most commonly used letter symbols, terms and definitions associated with Power MOSFETs.
Symbol
Term
Definition
Cds
drainsource capacitance
The capacitance between the drain and source terminals

with the gate terminal connected to the guard terminal of
a threeterminal bridge.
Cdg
draingate capacitance
The same as Crss See Crss.
Cgs
gatesource capacitance
The capacitance between the gate and source terminals

with the drain terminal connected to the guard terminal of
a threeterminal bridge.
Ciss
shortcircuit input capacitance,

commonsource
The capacitance between the input terminals (gate and

source) with the drain shortcircuited to the source for
alternating current. (Ref. IEEE No. 255)
Coss
shortcircuit output capacitance,

commonsource
The capacitance between the output terminals (drain and

source) with the gate shortcircuited to the source for
alternating current. (Ref. IEEE No. 255)
Crss
shortcircuit reverse transfer

capacitance, commonsource
The capacitance between the drain and gate terminals

with the source connected to the guard terminal of a
threeterminal bridge.
gFS
commonsource largesignal
transconductance
The ratio of the change in drain current due to a change in

gatetosource voltage.
ID
drain current, dc
The direct current into the drain terminal.
ID(on)
onstate drain current
The direct current into the drain terminal with a specified

forward gatesource voltage applied to bias the device to
the onstate.
IDSS
zerogatevoltage drain current
The direct current into the drain terminal when the

gatesource voltage is zero. This is an onstate current in
a depletiontype device, an offstate in an enhancement
type device.
IG
gate current, dc
The direct current into the gate terminal.
IGSS
reverse gate current, drain shortcircuited

to source
The direct current into the gate terminal of a junctiongate

fieldeffect transistor when the gate terminal is reverse
biased with respect to the source terminal and the drain
terminal is shortcircuited to the source terminal.
IGSSF
forward gate current, drain shortcircuited

to source
The direct current into the gate terminal of an insulated

gate fieldeffect transistor with a forward gatesource
voltage applied and the drain terminal shortcircuited to
the source terminal.
IGSSR
reverse gate current, drain shortcircuited

to source
The direct current into the gate terminal of an insulated

gate fieldeffect transistor with a reverse gatesource
voltage applied and the drain terminal shortcircuited to
the source terminal.

32
Symbol
Term
Definition
IS
source current, dc
The direct current into the source terminal.
PT, PD
total nonreactive power input to all

terminals
The sum of the products of the dc input currents and

voltages.
Qg
total gate charge
The total gate charge required to charge the MOSFETs

input capacitance to VGS(on).
RDS(on)
static drainsource onstate resistance
The dc resistance between the drain and source terminals

with a specified gatesource voltage applied to bias the
device to the on state.
RCA
thermal resistance, casetoambient
The thermal resistance (steadystate) from the device

case to the ambient.
RJA
thermal resistance, junctiontoambient
The thermal resistance (steadystate) from the semiconductor junction(s) to the ambient.
RJC
thermal resistance, junctiontocase
The thermal resistance (steadystate) from the semiconductor junction(s) to a stated location on the case.
RJM
thermal resistance, junctiontomounting

surface
The thermal resistance (steadystate) from the semiconductor junction(s) to a stated location on the mounting
surface.
TA
ambient temperature or freeair

temperature
The air temperature measured below a device, in an

environment of substantially uniform temperature, cooled
only by natural air convection and not materially affected
by reflective and radiant surfaces.
TC
case temperature
The temperature measured at a specified location on the

case of a device.
tc
turnoff crossover time
The time interval during which drain voltage rises from

10% of its peak offstate value and drain current falls to
10% of its peak onstate value, in both cases ignoring
spikes that are not chargecarrier induced.
TJ
channel temperature
The temperature of the channel of a fieldeffect transistor.
Tstg
storage temperature
The temperature at which the device, without any power

applied, may be stored.
td(off)
turnoff delay time
Synonym for current turnoff delay time (see Note 1)*.
td(off)i
current turnoff delay time
The interval during which an input pulse that is switching

the transistor from a conducting to a nonconducting state
falls from 90% of its peak amplitude and the drain current
waveform falls to 90% of its onstate amplitude, ignoring
td(off)v
voltage turnoff delay time
The time interval during which an input pulse that is

switching the transistor from a conducting to a nonconducting state falls from 90% of its peak amplitude and the
drain voltage waveform rises to 10% of its offstate
amplitude, ignoring spikes that are not chargecarrier
induced.
td(on)
turnon delay time
Synonym for current turnon delay time (see Note 1)*.
td(on)i
current turnon delay time
The time interval during which can input pulse that is

switching the transistor from a nonconducting to a
conducting state rises from 10% of its peak amplitude and
the drain current waveform rises to 10% of its onstate
induced.

33
Symbol
Term
Definition
td(on)v
voltage turnon delay time
The time interval during which an input pulse that is

switching the transistor from a nonconducting to a
conducting state rises from 10% of its peak amplitude and
the drain voltage waveform falls to 90% of its offstate
induced.
tf
fall time
Synonym for current fall time (see Note 1)*.
tfi
current fall time
The time interval during which the drain current changes

from 90% to 10% of its peak offstate value, ignoring
tfv
voltage fall time
The time interval during which the drain voltage changes

toff
turnoff time
Synonym for current turnoff time (see Note 1)*.
toff(i)
current turnoff time
The sum of current turnoff delay time and current fall time,
i.e., td(off)i + tfi.
toff(v)
voltage turnoff time
The sum of voltage turnoff delay time and voltage rise

time, i.e., td(off)v + trv.
ton
turnon time
Synonym for current turnon time (see Note 1)*.
ton(i)
current turnon time
The sum of current turnon delay time and current rise

time, i.e., td(on)i + tri.
ton(v)
voltage turnon time
The sum of voltage turnon delay time and voltage fall

time, i.e., td(on)v + tfv.
tp
pulse duration
The time interval between a reference point on the leading

edge of a pulse waveform and a reference point on the
trailing edge of the same waveform.
Note: The two reference points are usually 90% of the
steadystate amplitude of the waveform existing after the leading
edge, measured with respect to the steadystate amplitude
existing before the leading edge. If the reference points are 50%
points, the symbol tw and term average pulse duration should be
used.
tr
rise time
Synonym for current rise time (see Note 1)*.
tri
current rise time
The time interval during which the drain current changes

from 10% to 90% of its peak onstate value, ignoring
trv
voltage rise time
The time interval during which the drain voltage changes

tti
current fall time
The time interval following current fall time during which

the drain current changes from 10% to 2% of its peak
onstate value, ignoring spikes that are not chargecarrier
induced.
tw
average pulse duration
The time interval between a reference point on the leading

edge of a pulse waveform and a reference point on the
trailing edge of the same waveform, with both reference
points being 50% of the steadystate amplitude of the
waveform existing after the leading edge, measured with
respect to the steadystate amplitude existing before the
leading edge.
Note: If the reference points are not 50% points, the symbol tp
and term pulse duration should be used.

34
Symbol
Term
Definition
V(BR)DSR
drainsource breakdown voltage with

(resistance between gate and source)
The breakdown voltage between the drain terminal and the

source terminal when the gate terminal is (as indicated by
the last subscript letter) as follows:
R = returned to the source terminal through a specified
resistance.
V(BR)DSS
gate shortcircuited to source
S = shortcircuited to the source terminal.
V(BR)DSV
voltage between gate and source
V = returned to the source terminal through a specified

voltage.
V(BR)DSX
circuit between gate and source
X = returned to the source terminal through a specified

circuit.
V(BR)GSSF
forward gatesource breakdown voltage
The breakdown voltage between the gate and source

terminals with a forward gatesource voltage applied and
the drain terminal shortcircuited to the source terminal.
V(BR)GSSR
reverse gatesource breakdown voltage
The breakdown voltage between the gate and source

terminals with a reverse gatesource voltage applied and
the drain terminal shortcircuited to the source terminal.
VDD, VGG
VSS
supply voltage, dc (drain, gate, source)

voltage
The dc supply voltage applied to a circuit or connected to

the reference terminal.
VDG
VDS
VGD
VGS
VSD
VSG
draintogate
draintosource
gatetodrain
gatetosource
sourcetodrain
sourcetogate
The dc voltage between the terminal indicated by the first

subscript and the reference terminal indicated by the
second subscript (stated in terms of the polarity at the
terminal indicated by the first subscript).
VDS(on)
drainsource onstate voltage
The voltage between the drain and source terminals with

a specified forward gatesource voltage applied to bias the
device to the on state.
VGS(th)
gatesource threshold voltage
The forward gatesource voltage at which the magnitude

of the drain current of an enhancementtype fieldeffect
transistor has been increased to a specified low value.
ZJA(t)
transient thermal impedance,

junctiontoambient
The transient thermal impedance from the semiconductor

junction(s) to the ambient.
ZJC(t)
transient thermal impedance,

junctiontocase
The transient thermal impedance from the semiconductor

junction(s) to a stated location on the case.
Note 1: As names of time intervals for characterizing switching transistors, the terms fall time and rise time always refer to the change that is
taking place in the magnitude of the output current even though measurements may be made using voltage waveforms. In a purely resistive
circuit, the (current) rise time may be considered equal and coincident to the voltage fall time and the (current) fall time may be considered equal
and coincident to the voltage rise time. The delay times for current and voltage will be equal and coincident. When significant amounts of
inductance are present in a circuit, these equalities and coincidences no longer exist, and use of the unmodified terms delay time, fall time, and
rise time must be avoided.

35
100%
90%
Pulse
amplitude
Input Voltage
(Idealized wave shape)
10%
toff ton(i)
toff toff(i)
td(on) = td(on)i
Drain
Current
(Practical wave shape
including spikes caused
by currents that are
not chargecarrier
induced)
td(off) = td(off)i
tf tfi
tr tri
90%
ID(on)
Drain
Current
10%
toff(v)
ton(v)
ID(off)
td(off)v
td(on)v
tfv
trv
90%
[VDD
Drain
Voltage
10%
VDS(on)
Figure 11. Waveforms for ResistiveLoad Switching
90%
Input
Voltage
toff(i)
tfi
IDM
90%
Drain
Current
td(off)i
10%
ID(off)
2%
tc (or txo)
trv
90%
tti
VDSM
Vclamp or V(BR)DSX
(See Note)
td(off)v
Drain
Voltage
VDS(on)
10%
[VDD
toff(v)
NOTE: Vclamp (in a clamped inductiveload switching circuit) or V(BR)DSX (in an unclamped circuit) is the peak offstate voltage
excluding spikes.
Figure 12. Waveforms for Inductive Load Switching, TurnOff

36
Basic TMOS Structure, Operation and Physics
GATE + VG
Structures:
CURRENT
Motorolas TMOS Power MOSFET family is a matrix of diffused channel, vertical, metaloxidesemiconductor power
fieldeffect transistors which offer an exceptionally wide
range of voltages and currents with low RDS(on). The inherent
advantages of Motorolas power MOSFETs include:
Nearly infinite static input impedance featuring:
Voltage driven input
Low input power
Few driver circuit components
DEPLETION
REGION
NCHANNEL
(CURRENT PATH)
Very fast switching times

No minority carriers
Minimal turnoff delay time
Large reversed biased safe operating area
High gain bandwidth product
Positive temperature coefficient of onresistance
Large forward biased safe operating area
Ease in paralleling
Almost constant transconductance
PSUBSTRATE
AND BODY
SOURCE METAL
DRAIN METAL + VDD
Figure 13. Conventional SmallSignal MOSFET has

Long Lateral Channel Resulting in Relatively High
DraintoSource Resistance
High dv/dt immunity

Motorolas TMOS power MOSFET line is the latest step in
an evolutionary progression that began with the conventional
smallsignal MOSFET and superseded the intermediate lateral double diffused MOSFET (LDMOSFET) and the vertical
Vgroove MOSFET (VMOSFET).
The conventional smallsignal lateral Nchannel
MOSFET consists of a lightly doped Ptype substrate into
which two highly doped N+ regions are diffused, as shown in
Figure 13. The N+ regions act as source and drain which
are separated by a channel whose length is determined by
photolithographic constraints. This configuration resulted in
long channel lengths, low current capability, low reverse
blocking voltage and high RDS(on).
Two major changes in the smallsignal MOSFET structure
were responsible for the evolution of the power MOSFET.
One was the use of self aligned, double diffusion techniques
to achieve very short channel lengths, which allowed higher
channel packing densities, resulting in higher current capability and lower RDS(on). The other was the incorporation of a
lightly doped N+ region between the channel and the N+
drain allowing high reverse blocking voltages.
These changes resulted in the lateral double diffused
MOSFET power transistor (LDMOS) structure shown in
Figure 14, in which all the device terminals are still on the
top surface of the die. The major disadvantage of this configuration is its inefficient use of silicon area due to the area
needed for the top drain contact.
D
SiO2
N+
N+
P
Channel
Current
Figure 14. Lateral Double Diffused MOSFET

Structure Featuring Short Channel Lengths and High
Packing Densities for Lower On Resistance
The next step in the evolutionary process was a vertical
structure in which the drain contact was on the back of the
die, further increasing the channel packing density. The initial
concept used a Vgroove MOSFET power transistor as
shown in Figure 15. The channels in this device are defined
by preferentially etching Vgrooves through double diffused
N+ and P regions. The requirements of adequate packing
density, efficient silicon usage and adequate reverse blocking voltage are all met by this configuration. However, due to
its nonplanar structure, process consistency and cleanliness requirements resulted in higher die costs.

37
The cell structure chosen for Motorolas TMOS power

MOSFETs is shown in Figure 16. This structure is similar to
that of Figure 14 except that the drain contact is dropped
through the N substrate to the back of the die. The gate
structure is now made with polysilicon sandwiched between
two oxide layers and the source metal applied continuously
over the entire active area. This two layer electrical contact
gives the optimum in packing density and maintains the
processing advantages of planar LDMOS. This results in a
highly manufacturable process which yields low RDS(on) and
high voltage product.
S
X of
A1
SiO2
n+
p
n
n+
As the drain voltage is increased, the drain current saturates and becomes proportional to the square of the applied
gatetosource voltage, VGS, as indicated in Equation (2).
(2) ID
[ 2LZ
SOURCE SITE
SOURCE
METALIZATION
SILICON
GATE
NCHANNEL
DRAIN CURRENT
INSULATING OXIDE, SiO2
NEpi LAYER
NSUBSTRATE
DRAIN
METALIZATION
Figure 16. TMOS Power MOSFET Structure Offers

Vertical Current Flow, Low Resistance Paths and
Permits Compact Metalization on Top and Bottom
Surfaces to Reduce Chip Size
Operation:
Transistor action and the primary electrical parameters of
Motorolas TMOS power MOSFET can be defined as follows:
Drain Current, ID:
When a gate voltage of appropriate polarity and magnitude
is applied to the gate terminal, the polysilicon gate induces
an inversion layer at the surface of the diffused channel
region represented by rCH in Figure 17 (page A8). This
inversion layer or channel connects the source to the lightly
doped region of the drain and current begins to flow. For
small values of applied draintosource voltage, VDS, drain
current increases linearly and can be represented by Equation (1).
(1) ID
[ ZL
mCo
[VGSVGS(th)] VDS

38
[VGSVGS(th)]2
Where = Carrier Mobility

Co = Gate Oxide Capacitance per unit area
Z = Channel Width
L = Channel Length
These values are selected by the device design engineer
to meet design requirements and may be used in modeling
and circuit simulations. They explain the shape of the output
characteristics discussed in Chapter 2.
Transconductance, gFS:
The transconductance or gain of the TMOS power
MOSFET is defined as the ratio of the change in drain current and an accompanying small change in applied gateto
source voltage and is represented by Equation (3).
Figure 15. VGroove MOSFET Structure Has

Short Vertical Channels with Low
DraintoSource Resistance
mCo
(3) gFS
+ DDID(sat)
+ ZL
VGS
mCo
[VGSVGS(th)]
The parameters are the same as above and demonstrate

that drain current and transconductance are directly related
and are a function of the die design. Note that transconductance is a linear function of the gate voltage, an important
feature in amplifier design.
Threshold Voltage, VGS(th)
Threshold voltage is the gatetosource voltage required
to achieve surface inversion of the diffused channel region,
(r CH in Figure 17) and as a result, conduction in the
channel.
As the gate voltage increases the more the channel is
enhanced, or the lower its resistance (rCH) is made, the
more current will flow. Threshold voltage is measured at a
specified value of current to maintain measurement correlations. A value of 1.0 mA is common throughout the industry.
This value is primarily a function of the gate oxide thickness
and channel doping level which are chosen during the die
design to give a high enough value to keep the device off with
no bias on the gate at high temperatures. A minimum value
of 1.5 volts at room temperature will guarantee the transistor
remains an enhancement mode device at junction temperatures up to 150C.
OnResistance, RDS(on):
Onresistance is defined as the total resistance encountered by the drain current as it flows from the drain terminal to
the source terminal. Referring to Figure 17, RDS(on) is composed primarily of four resistive components associated with:
The Inversion channel, rCH; the GateDrain Accumulation
Region, rACC; the junction FET Pinch region, rJFET; and the
lightly doped Drain Region, rD, as indicated in Equation (4).
(4) RDS(on)
+ rCH ) rACC ) rJFET ) rD
POLY
N+
P+
rJFET
rACC
rCH
N+
P+
rD
N+
Figure 17. TMOS Device OnResistance

S
Cgs
Cgs
POLY
N+
Cgd
P+
n+
N+
P+
Cds
N
N+
resistance continues to decrease as VGS is increased toward

the maximum rating of the device.
Note: RDS(on) is inversely proportional to the carrier mobility. This
means that the RDS(on) of the PChannel MOSFET is approximately
2.5 to 3.0 times that of a similar NChannel MOSFET. Therefore, in
order to have matched complementary on characteristics, the Z/L ratio
of the PChannel device must be 2.53.0 times that of the NChannel
device. This means larger die are required for PChannel MOSFETs
with the same RDS(on) and same breakdown voltage as an NChannel
device and thus device capacitances and costs will be
correspondingly higher.
Breakdown Voltage, V(BR)DSS:

Breakdown voltage or reverse blocking voltage of the
TMOS power MOSFET is defined in the same manner as
V(BR)CES in the bipolar transistor and occurs as an avalanche
breakdown. This voltage limit is reached when the carriers
within the depletion region of the reverse biased PN junction acquire sufficient kinetic energy to cause ionization or
when the critical electric field is reached. The magnitude of
this voltage is determined mainly by the characteristics of the
lightly doped drain region and the type of termination of the
dies surface electric field.
Figure 19 shows a schematic representation of the
crosssection in Figure 18 and depicts the bipolar transistor
built in the epi layer. Point A shows where the emitter and
base of the bipolar is shorted together. This is why V(BR)DSS
of the power FET is equal to V(BR)CES of the bipolar. Also
note the short brings the base in contact with the source metal allowing the use of the basecollector junction. This is the
diode across the TMOS power MOSFET.
Figure 18. TMOS Device Parasitic Capacitances

Whereas the channel resistance increases with channel
length, the accumulation resistance increases with poly
width and the JFET pinch resistance increases with epi
resistivity and all three are inversely proportional to the channel width and gatetosource voltage. The drain resistance
is proportional to the epi resistivity, poly width and inversely
proportional to channel width. This says that the onresistance of TMOS power FETs with the thick and high resistivity
epi required for high voltage parts will be dominated by rD.
Low voltage devices have thin, low resistivity epi and rCH
will be a large portion of the total onresistance. This is
why high voltage devices are full on with moderate voltages
on the gate, whereas with low voltage devices the on
Figure 19. Schematic Diagram of all the Components

of the Cross Section of Figure 17

39
TMOS Power MOSFET Capacitances:

Two types of intrinsic capacitances occur in the TMOS
power MOSFET those associated with the MOS structure
and those associated with the PN junction.
The two MOS capacitances associated with the MOSFET
cell are:
GateSource Capacitance, Cgs
GateDrain Capacitance, Cgd
The magnitude of each is determined by the die geometry
and the oxides associated with the silicon gate.
The PN junction formed during fabrication of the power
MOSFET results in the draintosource capacitance, Cds.
This capacitance is defined the same as any other planar
junction capacitance and is a direct function of the channel
drain area and the width of the reverse biased junction depletion region.
The dielectric insulator of Cgs and Cgd is basically a glass.
Thus these are very stable capacitors and will not vary with
voltage or temperature. If excessive voltage is placed on the
gate, breakdown will occur through the glass, creating a resistive path and destroying MOSFET operation.
Optimizing TMOS Geometry:
The geometry and packing density of Motorolas
MOSFETs vary according to the magnitude of the reverse
blocking voltage.
The geometry of the source site, as well as the spacing between source sites, represents important factors in efficient
power MOSFET design. Both parameters determine the
channel packing density, i.e.: ratio of channel width per cell to
cell area.
For low voltage devices, channel width is crucial for minimizing RDS(on), since the major contributing component of
RDS(on) is rCH. However, at high voltages, the major contributing component of resistance is rD and thus minimizing
RDS(on) is dependent on maximizing the ratio of active drain
area per cell to cell area. These two conditions for minimizing
RDS(on) cannot be met by a single geometry pattern for both
low and high voltage devices.
Distinct Advantages of Power MOSFETs

Power MOSFETs offer unique characteristics and capabilities that are not available with bipolar power transistors. By
taking advantage of these differences, overall systems cost
savings can result without sacrificing reliability.
Speed
Power MOSFETs are majority carrier devices, therefore
their switching speeds are inherently faster. Without the
minority carrier stored base charge common in bipolar transistors, storage time is eliminated. The high switching
speeds allow efficient switching at higher frequencies which
reduces the cost, size and weight of reactive components.
MOSFET switching speeds are primarily dependent on
charging and discharging the device capacitances and are
essentially independent of operating temperature.
Input Characteristics
The gate of a power MOSFET is electrically isolated from
the source by an oxide layer that represents a dc resistance
greater than 40 megohms. The devices are fully biasedon
with a gate voltage of 10 volts. This significantly simplifies the
drive circuits and in many instances the gate may be driven
directly from logic integrated circuits such as CMOS and TTL
to control high power circuits directly.
Since the gate is isolated from the source, the drive
requirements are nearly independent of the load current.
This reduces the complexity of the drive circuit and results in
overall system cost reduction.
Safe Operating Area

Power MOSFETs, unlike bipolars, do not require derating
of power handling capability as a function of applied voltage.

310
The phenomena of second breakdown does not occur within

the ratings of the device. Depending on the application,
snubber circuits may be eliminated or a smaller capacitance
value may be used in the snubber circuit. The safe operating
boundaries are limited by the peak current ratings, breakdown voltages and the power capabilities of the devices.
OnVoltage
The minimum onvoltage of a power MOSFET is determined by the device onresistance RDS(on). For low voltage
devices the value of RDS(on) is extremely low, but with high
voltage devices the value increases. RDS(on) has a positive
temperature coefficient which aids in paralleling devices.
Examples of Advantages Offered by

MOSFETs
High Voltage Flyback Converter
An obvious way of showing the advantages of power
MOSFETs over bipolars is to compare the two devices in the
same system. Since the drive requirements are not the
same, it is not a question of simply replacing the bipolar with
the FET, but one of designing the respective drive circuits to
produce an equivalent output, as described in Figures 110
and 111.
For this application, a peak output voltage of about 700 V
driving a 30 k load (PO(pk) 16 W) was required. With the
component values and timing shown, the inductor/device
current required to generate this flyback voltage would have
to ramp up to about 3.0 A.
+VDD 36 V
1.6 mH
L
1N4725
MTP4N80E
Q1
15 V
Vo 800 V
RL
30 k
CL
68
0.5 F
0
PW 350 s
f = 1.7 kHz
1.0 k
Figure 110. TMOS Output Stage
+VCC 32 V
+V
150 pF
2.2
2.0 W
82
MJE200
Q1
VI
0
0.01 F
180
Vo 700 V
D1
D2
Q4
270
0.5 F
47
27
Q3
D3
MJ8505
MJE200
Q2
1N914
30 k
100
1.0 k
2N2905
V
Figure 111. Bipolar Driver and Output Stage

Figures 110 and 111. Circuit Configurations for a TMOS and
Bipolar Output Stage of a High Voltage Flyback Converter
Figure 110 shows the TMOS version. Because of its high

input impedance, the FET, an MTP4N80E, can be directly
driven from the pulse width modulator. However, the PWM
output should be about 15 volts in amplitude and for relatively fast FET switching be capable of sourcing and sinking
100 mA. Thus, all that is required to drive the FET is a resistor or two. The peak drain current of 3.2 A is within the
MTP4N80E pulsed current rating of 18.0 A (4.0 A continuous), and the turnoff load line of 3.2 A, 700 V is well within
the Switching SOA (18.0 A/800 V) of the device. Thus, the
circuit demonstrates the advantages of TMOS:
High input impedance
Fast Switching
Compare this circuit with the bipolar version of Figure

111.
To achieve the output voltage, using a high voltage Switchmode MJ8505 power transistor, requires a rather complex
drive circuit for generating the proper IB1 and IB2. This circuit
uses three additional transistors (two of which are power
transistors), three Baker clamp diodes, eleven passive components and a negative power supply for generating an off
bias voltage. Also, the RBSOA capability of this device is
only 3.0 A at 900 V and 4.7 A at 800 V, values below the
18.0 A/800 V rating of the MOSFET. A detailed description of
these circuits is shown in Chapter 8, Switching Power
Supplies.
No Second breakdown

311
+170 V
+170 V
VCC
1N4933
+10 F
MC34060
Q1 10 H
MC3406
PWM
Q1
MTP4N50E
200
47
56
Q2
MJE13005
MPSA55
Figure 112. TMOS Version
Figure 113. Bipolar Version
Figures 112 and 113. Comparison of Power MOSFET and Bipolar

in the Power Output Stage of a 20 kHz Switcher
20 kHz Switcher
An example of MOSFET advantage over bipolar that illustrates its superior switching speed is shown in the power output section of Figures 112 and 113. In addition to the drive
simplicity and reduced component count, the faster switching
speed offers better circuit efficiency. For this 35 W switching
regulator, using the same small heatsink for either device, a
case temperature rise of only 18C was measured for the
MTP4N50E power MOSFET compared to a 46C rise for the

312
MJE13005 bipolar transistor. Although the saturation losses

were greater for the TMOS, its lower switching losses predominated, resulting in a more efficient switching device.
In general, at low switching frequencies, where static
losses predominate, bipolars are more efficient. At higher
frequencies, above 50 kHz, the power MOSFETs are more
efficient.

Output Characteristics
Perhaps the most direct way to become familiar with the
basic operation of a device is to study its output characteristics. In this case, a comparison of the MOSFET characteristics with those of a bipolar transistor with similar ratings is in
order, since the curves of a bipolar device are almost universally familiar to power circuit design engineers.
As indicated in Figures 21 and 22, the output characteristics of the power MOSFET and the bipolar transistor can be
divided similarly into two basic regions. The figures also
show the numerous and often confusing terms assigned to
those regions. To avoid possible confusion, this section will
refer to the MOSFET regions as the on (or ohmic) and
active regions and bipolar regions as the saturation and
active regions.
Basic MOSFET Parameters
POWER MOSFET
10
I D, DRAIN CURRENT (AMPS)
9.0
8.0
10 V
REGION A
9.0 V
REGION B
7.0
6.0
8.0 V
5.0
4.0
3.0
7.0 V
2.0
1.0
0
6.0 V
VGS = 5.0 V
4.0
8.0
12
16
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 21. IDVDS Output Characteristics of a Power

MOSFET. Region A is Called the Ohmic, On, Constant
Resistance or Linear Region. Region B is Called the
Active, Constant Current, or Saturation Region.
BIPOLAR POWER TRANSISTOR
10
9.0
8.0
One of the three obvious differences between Figures 21

and 22 is the family of curves for the power MOSFET is
generated by changes in gate voltage and not by base current variations. A second difference is the slope of the curve
in the bipolar saturation region is steeper than the slope in
the ohmic region of the power MOSFET indicating that the
onresistance of the MOSFET is higher than the effective
onresistance of the bipolar.
The third major difference between the output characteristics is that in the active regions the slope of the bipolar curve
is steeper than the slope of the TMOS curve, making the
MOSFET a better constant current source. The limiting of ID
is due to pinchoff occurring in the MOSFET channel.
100 mA
REGION A
REGION B
7.0
OnResistance
The onresistance, or RDS(on), of a power MOSFET is an
important figure of merit because it determines the amount of
current the device can handle without excessive power dissipation. When switching the MOSFET from off to on, the
drainsource resistance falls from a very high value to
RDS(on), which is a relatively low value. To minimize RDS(on)
the gate voltage should be large enough for a given drain
current to maintain operation in the ohmic region. Data
sheets usually include a graph, such as Figure 23, which
relates this information. As Figure 24 indicates, increasing
the gate voltage above 12 volts has a diminishing effect on
lowering onresistance (especially in high voltage devices)
and increases the possibility of spurious gatesource voltage
spikes exceeding the maximum gate voltage rating of
20 volts. Somewhat like driving a bipolar transistor deep into
saturation, unnecessarily high gate voltages will increase
turnoff time because of the excess charge stored in the input capacitance. All Motorola TMOS FETs will conduct the
rated continuous drain current with a gate voltage of 10 volts.
As the drain current rises, especially above the continuous
rating, the onresistance also increases. Another important
relationship, which is addressed later with the other temperature dependent parameters, is the effect that temperature
has on the onresistance. Increasing TJ and ID both effect an
increase in RDS(on) as shown in Figure 25.
6.0
5.0
4.0
3.0
2.0
IB = 20 mA
IB = 10 mA
1.0
0
0
4.0
8.0
12
16
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 22. ICVCE Output Characteristics of a Bipolar

Power Transistor. Region A is the Saturation Region.
Region B is the Linear or Active Region.
Transconductance
Since the transconductance, or gFS, denotes the gain of
the MOSFET, much like beta represents the gain of the bipolar transistor, it is an important parameter when the device is
operated in the active, or constant current, region. Defined
as the ratio of the change in drain current corresponding to a
change in gate voltage (gFS = dID/dVGS), the transconductance varies with operating conditions as seen in Figure 26.
The value of gFS is determined from the active portion of the
VDSID transfer characteristics where a change in VDS no
longer significantly influences gFS. Typically the transconductance rating is specified at half the rated continuous drain
current and at a VDS of 15 V.

313
8.0
1.25
NORMALIZED ONRESISTANCE
1.20
VDS = 30 V
6.0
4.0
TJ = 100C
2.0
25C
55C
1.15
1.10
HIGH VOLTAGE
MOSFET
1.05
1.00
0.95
0.90
LOW
VOLTAGE
MOSFET
0.85
0.80
0
0
2.0
4.0
6.0
8.0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
0.75
4.0
10
8.0
10
12
14
16
18
20
Figure 24. The Effect of GatetoSource

Voltage on OnResistance Varies with a
Devices Voltage Rating
0.5
3.0
gFS , FORWARD TRANSCONDUCTANCE
(SIEMENS)
RDS(on), DRAINTOSOURCE RESISTANCE (OHMS)
Figure 23. Transfer Characteristics
6.0
TJ = 100C
0.4
TJ = 25C
0.3
TJ = 55C
0.2
0.1
0
0
5.0
10
15
ID, DRAIN CURRENT (AMPS)
20
25
Figure 25. Variation of RDS(on) with Drain

Current and Temperature
For designers interested only in switching the power

MOSFET between the on and off states, the transconductance is often an unused parameter. Obviously when the device is switched fully on, the transistor will be operating in its
ohmic region where the gate voltage will be high. In that region, a change in an already high gate voltage will do little to
increase the drain current; therefore, gFS is almost zero.
Threshold Voltage
Threshold Voltage, VGS(th), is the lowest gate voltage at
which a specified small amount of drain current begins to
flow. Motorola normally specifies VGS(th) at an ID of one
milliampere. Device designers can control the value of the
threshold voltage and target VGS(th) to optimize device performance and practicality. A low threshold voltage is desired
so the TMOS FET can be controlled by low voltage chips
such as CMOS and TTL. A low value also speeds switching
because less current needs to be transferred to charge the
parasitic input capacitances. But the threshold voltage can
be too low if noise can trigger the device. Also, a positive
going voltage transient on the drain can be coupled to the
gate by the gatetodrain parasitic capacitances and can
cause spurious turnon of a device with a low VGS(th).
314
VDS = 15 V
TC = 25C
2.0
CURVE FALLS AS
DEVICE ENTERS
OHMIC REGION
(VDS DEPENDENT)
1.0
0
4.0
5.0
6.0
7.0
8.0
9.0
10
11
12
Figure 26. SmallSignal Transconductance

versus VGS
Temperature Dependent Characteristics RDS(on)

Junction temperature variations and their effect on the on
resistance, RDS(on), should be considered when designing
with power MOSFETs. Since RDS(on) varies approximately
linearly with temperature, power MOSFETs can be assigned
temperature coefficients that describe this relationship.
Figure 27 shows that the temperature coefficient of
RDS(on) is greater for high voltage devices than for low
voltage MOSFETs. A graph showing the variation of RDS(on)
with junction temperature is shown on most data sheets, Figure 25.
Switching Speeds are Constant with Temperature
High junction temperatures emphasize one of the most desirable characteristics of the MOSFET, that of low dynamic or
switching losses. In the bipolar transistor, temperature increases will increase switching times, causing greater dynamic losses. On the other hand, thermal variations have
little effect on the switching speeds of the power MOSFET.
These speeds depend on how rapidly the parasitic input capacitances can be charged and discharged. Since the magnitudes of these capacitances are essentially temperature
invariant, so are the switching speeds. Therefore, as temperature increases, the dynamic losses in a MOSFET are low
and remain constant, while in the bipolar transistors the
switching losses are higher and increase with junction temperature.
DrainToSource Breakdown Voltage
The draintosource breakdown voltage is a function of
the thickness and resistivity of a devices Nepitaxial region.
Since that resistivity varies with temperature, so does
V(BR)DSS. As Figure 28 indicates, a 100C rise in junction
temperature causes a V(BR)DSS to increase by about 10%.
However, it should also be remembered that the actual
V(BR)DSS falls at the same rate as TJ decreases.
NORMALIZED ONRESISTANCE
2.0
1.8
1.6
400 V MOSFET
1.4
Importance of TJ(max) and Heat Sinking

Two of the packages that commonly house the TMOS die
are the TO220AB and the TO204. The power ratings of
these packages range from 40 to 250 watts depending on
the die size and the type of materials used in construction.
These ratings are nearly meaningless, however, unless
some heat sinking is provided. Without heat sinking the
TO204 and the TO220 can dissipate only about 4.0 and
2.0 watts respectively, regardless of the die size.
Because long term reliability decreases with increasing
junction temperature, TJ should not exceed the maximum
rating of 150C. Steadystate operation above 150C also
invites abrupt and catastrophic failure if the transistor experiences additional transient thermal stresses. Excluding the
possibility of thermal transients, operating below the rated
junction temperature can enhance reliability. A TJ(max) of
150C is normally chosen as a safe compromise between
long term reliability and maximum power dissipation.
In addition to increasing the reliability, proper heat sinking
can reduce static losses in the power MOSFET by decreasing the onresistance. RDS(on), with its positive temperature
coefficient, can vary significantly with the quality of the heat
sink. Good heat sinking will decrease the junction temperature, which further decreases RDS(on) and the static losses.
60 V MOSFET
1.2
DrainSource Diode
1.0
25
50
75
100
TJ, JUNCTION TEMPERATURE
125
150
Figure 27. The Influence of Junction

Temperature on OnResistance Varies with
Breakdown Voltage
Threshold Voltage
The gate voltage at which the MOSFET begins to conduct,
the gatethreshold voltage, is temperature dependent. The
variation with TJ is linear as shown on most data sheets.
Having a negative temperature coefficient, the threshold
voltage falls about 10% for each 45C rise in the junction
temperature.
Inherent in most power MOSFETs, and all TMOS transistors, is a parasitic drainsource diode. Figure 29, the
illustration of cross section of the TMOS die, shows the PN
junction formed by the Pwell and the NEpi layer. Because
of its extensive junction area, the current ratings of the diode
are the same as the MOSFETs continuous and pulsed current ratings. For the NChannel TMOS FET shown in Figure
210, this diode is forward biased when the source is at a
positive potential with respect to the drain. Since the diode
may be an important circuit element, Motorola Designers
Data Sheets specify typical values of the forward onvoltage,
forward turnon and reverse recovery time. The forward
characteristic of the drainsource diode of a TMOS power
MOSFET is shown in Figure 211.
1.20
SOURCE
METALIZATION
NORMALIZED DRAINTOSOURCE
BREAKDOWN VOLTAGE
SOURCE SITE
1.15
1.10
1.05
SILICON
GATE
1.00
NCHANNEL
0.95
DRAIN CURRENT
0.90
INSULATING OXIDE, SiO2
0.85
0.80
50
NEpi LAYER
25
25
50
75
100
125
150
NSUBSTRATE
DRAIN
METALIZATION
Figure 28. Typical Variation of

DraintoSource Breakdown Voltage with
Junction Temperature
Figure 29. Cross Section of TMOS Cell

315
DRAIN
GATE
SOURCE
Figure 210. NChannel Power MOSFET Symbol

Including DrainSource Diode
Most rectifiers, a notable exception being the Schottky
diode, exhibit a reverse recovery characteristic as depicted
in Figure 212. When forward current flows in a standard
diode, a carrier gradient is formed in the high resistivity side
of the junction resulting in an apparent storage of charge.
Upon sudden application of a reverse bias, the stored charge
temporarily produces a negative current flow during the reverse recovery time, or trr, until the charge is depleted. The
circuit conditions that influence trr and the stored charge are
the forward current magnitude and the rate of change of current from the forward current magnitude to the reverse current peak. When tested under the same circuit conditions,
the parasitic drainsource diode of a TMOS transistor has a
trr similar to that of a fast recovery rectifier.
100
In many applications, the drainsource diode is never

forward biased and does not influence circuit operation.
However, in multitransistor configurations, such as the
totem pole network of Figure 213, the parasitic diodes play
an important and useful role. Each transistor is protected
from excessive flyback voltages, not by its own drainsource
diode, but by the diode of the opposite transistor. As an
illustration, assume that Q2 of Figure 213 is turned on, Q1
is off and current is flowing up from ground, through the load
and into Q2. When Q2 turns off, current is diverted into the
drainsource diode of Q1 which clamps the loads inductive
kick to V+. By similar reasoning, one can see that D2 protects
Q1 during its turnoff.
As a note of caution, it should be realized that diode recovery problems may arise when using MOSFETs in multiple
transistor configurations. A treatment of the subject in Chapter 5 gives greater details.
TMOS power MOSFET intrinsic diodes also have forward
recovery times, meaning that they do not instantaneously
conduct when they are forward biased. However, since those
times are so brief, typically less than 10 ns, their effect on circuit operation can almost always be ignored. Package, lead
and wiring inductance are often at least as great a factor in
limiting current rise time.
Is = 0.5 A/div
0
50
I s , DS DIODE FORWARD CURRENT (AMPS)
t = 50 ns/div
10
Figure 212. Typical Reverse Recovery

Characteristics of a DrainSource Diode
5.0
TC + 25C
300 S Pulse 60 pps
+V
1.0
0.5
Q1
0.1
Q2
RL
0
1.0
2.0
3.0
4.0
5.0
6.0
VSD, DD DIODE FORWARD ONVOLTAGE (VOLTS)

V
Figure 211. Forward Characteristics of Power

MOSFETs DS Diodes

316
Figure 213. TMOS Totem Pole Network with

Integral DrainSource Diodes
Chapter 3: The Data Sheet

Introduction
Motorola prides itself in having one of the most complete
and accurate Power MOSFET data sheets in the industry.
For consistency, data sheet templates have been established for each technology and or application grouping. This
insures that the best approach is used in describing the performance characteristics of each device for the applications
they are used in. Additionally, this allows for the automation
of the data sheet generation process which has lead to a
reduction in new product introduction cycle time as well as

providing more accurate and repeatable data.
Headline Information
Motorolas TMOS Power MOSFET numbering system
contains coded information describing technology, package,
current and voltage information. A complete explanation of
the nomenclature used is contained in Figure 31.
MTP75N06HD
MOTOROLA
X FOR ENGINEERING SAMPLES
TMOS
T FOR TMOS
L FOR SMARTDISCRETES
G FOR IGBT
P FOR MULTIPLE CHIP PRODUCTS
PACKAGE TYPE
P FOR PLASTIC TO220
M FOR METAL TO204 (TO3)/ICePAK
D FOR DPAK
A FOR TO220 ISOLATED
W FOR TO247
B FOR D2PAK
Y FOR TO264
E FOR SOT227B
OPTIONAL SUFFIX:
L FOR LOGIC LEVEL
E FOR ENERGY RATED
T4 FOR TAPE & REEL (DPAK/D2PAK)
RL FOR TAPE & REEL (DPAK)
V FOR TMOS V (FIVE)

CURRENT
SO8 (MiniMOS) and SOT223 Power MOSFETs

MMSF4P01HDR1
R1 AND R2 FOR TAPE & REEL
MiniMOS
MOTOROLA
TMOS
M FOR MINIATURE
PACKAGE TYPE
DF DUAL FET
SF SINGLE FET
FT FET TRANSISTOR
OPTIONAL SUFFIX:
E FOR ENERGY RATED
L FOR LOGIC LEVEL
C FOR COMPLEMENTARY
CURRENT
Figure 31. TMOS Power MOSFET Numbering System

317
Absolute Maximum Ratings

Absolute maximum ratings represent the extreme capabilities of the device. They can best be described as device
characterization boundaries and are given to facilitate worst
case design.
DraintoSource Voltage (VDSS , VDGR ) This represents

the lower limit of the devices blocking voltage capability from
draintosource when either the gate is shorted to the
source (VDSS), or when a 1 M gatetosource resistor is
present (VDGR). It is measured at a specific leakage current
and has a positive temperature coefficient. The voltage
across the Power MOSFET should never exceed this rating
in order to prevent breakdown of the draintosource
junction.
Maximum GatetoSource Voltage (VGS , VGSM ) The
maximum allowable gatetosource voltage as either a continuous condition (VGS), or as a single pulse nonrepetitive
condition (VGSM). Exceeding this limit may result in permanent device degradation.
Continuous Drain Current (ID ) The dc current level that
will raise the devices junction temperature to its rated maximum while its reference temperature is held at 25C. This
can be calculated by the equation:
ID = SQRT (PD/RDS(on) @ MAX TJ)
where,
SQRT = Square root
PD
= Devices maximum power dissipation
RDS(on) = Devices on resistance
MAX TJ = Devices maximum rated junction temperature
Pulsed Drain Current (IDM ) The maximum allowable peak

drain current the device can safely handle under a 10 s
pulsed condition. This rating takes into consideration the devices thermal limitation as well as RDS(on), wire bond and
source metal limitations.
DraintoSource Avalanche Energy (EAS) This specification defines the maximum allowable energy that the device
can safely handle in avalanche due to an inductive current
spike. It is tested at the ID of the device as a single pulse
nonrepetitive condition. This value has a negative temperature coefficient as shown by the Maximum Avalanche Energy versus Starting Junction Temperature figure shown in the
data sheet. For repetitive avalanche conditions, this value
should be derated using the Thermal Response figure
shown in the data sheet for calculating the junction temperature and the Maximum Avalanche Energy versus Starting
Junction Temperature figure also shown in the data sheet.
Maximum Power Dissipation (PD ) Specifies the power
dissipation limit which takes the junction temperature to its
maximum rating while the reference temperature is being
held at 25C. It is calculated by the following equation:
PD
where,
PD
TJ
Tr
Rthjr
= (TJ Tr)/Rthjr
= Maximum power dissipation
= Maximum allowable junction temperature
= Reference (case and or ambient) temperature
= Thermal resistance junctiontoreference
= (case or ambient)

318
Junction Temperature (TJ ) This value represents the

maximum allowable junction temperature of the device. It is
derived and based off of long term Reliability data. Exceeding this value will only serve to shorten the devices long term
operating life.
Thermal Resistance (Rthjc , Rthja ) The quantity that resists
or impedes the flow of heat energy in a device is called thermal resistance. Thermal resistance values are needed for
proper thermal design. These values are measured as detailed in Motorola Application Note AN1083.
Electrical Characteristics
The intent of this section in the data sheet is to provide detailed device characterization so that the designer can predict with a high degree of accuracy the behavior of the device
in a specific application.
DraintoSource Breakdown Voltage (V(BR)DSS ) As described earlier, this represents the lower limit of the devices
blocking voltage capability from draintosource with the
gate shorted to the source. It is measured at a specific leakage current and has a positive temperature coefficient.
Zero Gate Voltage Drain Current (IDSS ) The direct current
into the drain terminal of the device when the gatetosource
voltage is zero and the drain terminal is reversed biased with
respect to the source terminal. This parameter generally increases with temperature as shown in the DraintoSource
Leakage Current versus Voltage figure found in the devices
data sheet.
GateBody Leakage Current (IGSS ) The direct current
into the gate terminal of the device when the gate terminal is
biased with either a positive or negative voltage with respect
to the source terminal and the drain terminal is short
circuited to the source terminal.
Gate Threshold Voltage (VGS(th) ) The forward gateto
source voltage at which the magnitude of drain current has
been increased to some low threshold value, usually
specified as 250 A or 1 mA. This parameter has a negative
temperature coefficient.
DraintoSource OnResistance (RDS(on) ) The dc resistance between the draintosource terminals with a specified gatetosource voltage applied to bias the device into
the onstate. This parameter has a positive temperature
coefficient.
DraintoSource OnVoltage (VDS(on) ) The dc voltage
between the draintosource terminals with a specified
gatetosource voltage applied to bias the device into the
onstate. This parameter has a positive temperature coefficient.
Forward Transconductance (gFS ) The ratio of the
change in drain current due to a change in gatetosource
voltage (i.e., ID/ VGS).
Device Capacitance (Ciss , Coss , Crss ) Power MOSFET
devices have internal parasitic capacitance from terminal
toterminal. This capacitance is voltage dependent as
shown by the Capacitance Variation figure on the devices
data sheet. Ciss is the capacitance between the gateto
source terminals with the drain terminal shortcircuited to the
source terminal for alternating current. Coss is the capacitance between the draintosource terminals with the gate
shortcircuited to the source terminal for alternating current.

Crss is the capacitance between the draintogate terminals
with the source terminal connected to the guard terminal of a
threeterminal bridge (Ref. IEEE No. 255). Figures 32, 33
and 34 show test circuits used for Power MOSFET capacitance measurements.
VGS(on)
RL
PULSE
GENERATOR
LOW
IMPEDANCE
DRIVER
VDD
MTP
3055V
RG
+VR
IM
L
B
I
A
S
M
E
A
S.
CAP.
METER
H
L
O
O
P
Cgd
Cds
IM
Figure 35. Switching Test Circuit
0.1
F
ton
C1
Cgs
toff
td(off)
GUARD
tr
tf
90%
90%
OUTPUT, Vout
INVERTED
td(off)
10%
90%
L = 2.5 mH
INPUT, Vin
50%
50%
10%
VDS
PULSE WIDTH
Figure 32. Ciss Test Configuration
Figure 36. Switching Waveforms
IM D
L
B
I
A
S
M
E
A
S.
IM
CAP.
METER
H
L
O
O
P
Cgd
Cds
G
Cgs
GUARD
S
Forward OnVoltage (VSD ) The dc voltage between the

sourcetodrain terminals when the power MOSFETs intrinsic body diode is forward biased.
VDS
Figure 33. Coss Test Configuration

IM
L
B
I
A
S
CAP.
METER
M
E
A
S.
L
O
O
P IM
Cgd
Cds
H
G
Gate Charge (QT, Q1 , Q2 ) Gate charge values are used to

size the gate drive circuit and to estimate switching speeds
and switching losses. QT is defined as the total gate charge
required to charge the devices input capacitance to the applied gate voltage. Q1 is defined as the charge required to
charge the devices input capacitance to the VGS(on) required
to maintain the test current ID. The time required to deliver
this charge is called turnon delay time. Q2 is defined as the
charge time required for the draintosource voltage to drop
to VDS(on).
Cgs
GUARD
S
Reverse Recovery Time (trr , ta , tb , QRR ) The intrinsic

body diode of a power MOSFET is a minority carrier device
and thus has a finite reverse recovery time. Ta is defined as
the time between the dropping IS currents zero crossing
point to the peak IRM. Tb is defined as the time between the
peak IRM to a projected IRM zero current crossing point
through a 25% IRM projection as shown in Figure 37. Total
reverse recovery time, trr, is defined as the sum of ta and tb.
QRR is defined as the integral of the area made up by the IRM
waveform and VR, the reapplied blocking voltage which
forces reverse recovery.
+
VDS
di/dt
IS
Figure 34. Crss Test Configuration
Resistive Switching (td(on) , tr , td(off) , tf ) MOSFET switching speeds are very fast, relative to comparably sized bipolar
transistors. They are tested and measured using a resistive
switching test circuit as shown in Figure 35. A typical
switching waveform showing parameter measurement points
is shown in Figure 36.
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 37. Diode Reverse Recovery Waveform

319

320
Section Four
Data Sheets
41
MC33153
Advance Information
Single IGBT Gate Driver
The MC33153 is specifcally designed as an IGBT driver for high power
applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for
driving power MOSFETs and Bipolar Transistors. Device protection features
include the choice of desaturation or overcurrent sensing and undervoltage
detection. These devices are available in dualinline and surface mount
packages and include the following features:
SINGLE IGBT
GATE DRIVER
SEMICONDUCTOR
TECHNICAL DATA
High Current Output Stage: 1.0 A Source/2.0 A Sink

Protection Circuits for Both Conventional and Sense IGBTs
Programmable Fault Blanking Time
Protection against Overcurrent and Short Circuit
Undervoltage Lockout Optimzed for IGBTs
Negative Gate Drive Capability
Cost Effectively Drives Power MOSFETs and Bipolar Transistors

P SUFFIX
PLASTIC PACKAGE
CASE 626
Representative Block Diagram

VCC
6
VCC
Fault
Output 7
VEE
Short Circuit
Latch
S
Q
R
VCC
8
1
Short Circuit
Comparator
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO8)
VCC
Overcurrent
Comparator
Overcurrent
Latch
S
Q
R
Current
Sense
1 Input
130 mV
65 mV
VCC
VEE
VCC
Kelvin
Gnd
PIN CONNECTIONS
270 mA
Fault Blanking/
Desaturation
Comparator
6.5 V
VEE
Fault
8 Blanking/
Desaturation
Input
Current Sense
Input
8 Fault Blanking/
Desaturation Input
Kelvin Gnd
7 Fault Output
VEE
6 VCC
Input
5 Drive Output
VCC
Output
Stage
VCC
Input
VCC
4
VEE
Drive
5 Output
Under
Voltage
Lockout
(Top View)
VEE
ORDERING INFORMATION
12 V/
11 V
3
VEE
This device contains 133 active transistors.
Device
Package
TA = 40 to +105C
DIP8
MC33153D
MC33153P
42
Operating
Temperature Range
SO8
MC33153
MAXIMUM RATINGS
Rating
Symbol
Value
VCC VEE
KGnd VEE
23
23
Logic Input
Vin
VEE 0.3 to VCC
Current Sense Input
VS
0.3 to VCC
VBD
0.3 to VCC
Power Supply Voltage

VCC to VEE
Kelvin Ground to VEE
Unit
V
Blanking/Desaturation Input
Gate Drive Output
Source Current
Sink Current
Diode Clamp Current
IO
A
1.0
2.0
1.0
Fault Output
Source Current
Sink Curent
IFO
mA
25
10
Power Dissipation and Thermal Characteristics

D Suffix SO8 Package, Case 751
Maximum Power Dissipation @ TA = 50C
Thermal Resistance, JunctiontoAir
P Suffix DIP8 Package, Case 626
Maximum Power Dissipation @ TA = 50C
Thermal Resistance, JunctiontoAir
PD
RJA
0.56
180
W
C/W
PD
RJA
1.0
100
W
C/W
Operating Junction Temperature
TJ
+150
Operating Ambient Temperature
TA
40 to +105
Tstg
65 to +150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (VCC = 15 V, VEE = 0 V, Kelvin Gnd connected to VEE. For typical values
TA = 25C, for min/max values TA is the operating ambient temperature range that applies (Note 1), unless otherwise noted.)
Symbol
Min
Typ
Max
Input Threshold Voltage

High State (Logic 1)
Low State (Logic 0)
VIH
VIL
1.2
2.70
2.30
3.2
Input Current
High State (VIH = 3.0 V)
Low State (VIL = 1.2 V)
IIH
IIL
130
50
500
100
Output Voltage
Low State (ISink = 1.0 A)
High State (ISource = 500 mA)
VOL
VOH
12
2.0
13.9
2.5
Output PullDown Resistor
RPD
200
VFL
VFH
12
0.2
13.3
1.0
tPLH(in/out)
tPHL (in/out)
80
120
300
300
Drive Output Rise Time (10% to 90%) CL = 1.0 nF
tr
17
55
ns
Drive Output Fall Time (90% to 10%) CL = 1.0 nF
tf
17
55
ns
tP(OC)
0.3
1.0
Characteristic
Unit
LOGIC INPUT
V
DRIVE OUTPUT
V
FAULT OUTPUT
Output voltage
Low State (ISink = 5.0 mA)
High State (ISource = 20 mA)
SWITCHING CHARACTERISTICS
Propagation Delay (50% Input to 50% Output CL = 1.0 nF)
Logic Input to Drive Output Rise
Logic Input to Drive Output Fall
Propagation Delay
Current Sense Input to Drive Output
NOTE:
ns
1. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
Tlow = 40C for MC33153
Thigh = +105C for MC33153
43
MC33153
ELECTRICAL CHARACTERISTICS (continued) (VCC = 15 V, VEE = 0 V, Kelvin Gnd connected to VEE. For typical values
TA = 25C, for min/max values TA is the operating ambient temperature range that applies (Note 1), unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
SWITCHING CHARACTERISTICS (continued)
Fault Blanking/Desaturation Input to Drive Output
Unit
tP(FLT)
0.3
1.0
Startup Voltage
VCC start
12
12.6
Disable Voltage
VCC dis
10.4
11
Overcurrent Threshold Voltage (VPin8 > 7.0 V)
VSOC
50
65
80
mV
Short Circuit Threshold Voltage (VPin8 > 7.0 V)
VSSC
100
130
160
mV
Vth(FLT)
6.0
6.5
7.0
ISI
1.4
10
Ichg
200
270
300
Idschg
1.0
2.5
mA
7.2
7.9
14
20
UVLO
COMPARATORS
Fault Blanking/Desaturation Threshold (VPin1 > 100 mV)

Current Sense Input Current (VSI = 0 V)
FAULT BLANKING/DESATURATION INPUT
Current Source (VPin8 = 0 V, VPin4 = 0 V)
Discharge Current (VPin8 = 15 V, VPin4 = 5.0 V)
TOTAL DEVICE
Power Supply Current
Standby (VPin 4 = VCC, Output Open)
Operating (CL = 1.0 nF, f = 20 kHz)
NOTE:
ICC
mA
1. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
Tlow = 40C for MC33153
Thigh = +105C for MC33153
Figure 2. Output Voltage versus Input Voltage
Figure 1. Input Current versus Input Voltage

1.5
16
VCC = 15 V
TA = 25C
VO , OUTPUT VOLTAGE (V)
I in , INPUT CURRENT (mA)
14
1.0
0.5
VCC = 15 V
TA = 25C
0
2.0
4.0
6.0
8.0
10
Vin, INPUT VOLTAGE (V)
44
12
14
12
10
8.0
6.0
4.0
2.0
16
1.0
2.0
3.0
4.0
5.0
Vin, INPUT VOLTAGE (V)
MC33153
Figure 4. Input Threshold Voltage
versus Supply Voltage
VCC = 15 V
3.0
2.6
2.4
VIL
2.2
2.0
60
40
20
20
40
60
80
100
120
140
TA = 25C
VIH
2.7
2.6
2.5
2.4
VIL
2.3
2.2
12
13
14
15
16
17
18
19
20
VCC, SUPPLY VOLTAGE (V)
Figure 5. Drive Output Low State Voltage

versus Temperature
Figure 6. Drive Output Low State Voltage

versus Sink Current
V OL, OUTPUT LOW STATE VOLTAGE (V)
ISink = 1.0 A
2.0
= 500 mA
1.5
= 250 mA
1.0
0.5
VCC = 15 V
40
20
20
40
60
80
100
120
2.0
1.6
1.2
0.8
0.4
0
140
TA = 25C
VCC = 15 V
0
0.2
0.4
0.6
0.8
1.0
TA, AMBIENT TEMPERATURE (C)
ISink, OUTPUT SINK CURRENT (A)
Figure 7. Drive Output High State Voltage

versus Temperature
Figure 8. Drive Output High State Voltage

versus Source Current
14.0
13.9
13.8
13.7
VCC = 15 V
ISource = 500 mA
13.6
13.5
60
2.8
2.5
0
60
VOH , DRIVE OUTPUT HIGH STATE VOLTAGE (V)
VIH
2.8
V IH V IL , INPUT THRESHOLD VOLTAGE (V)
3.2
40
20
20
40
60
80
100
120
140
VOH , DRIVE OUTPUT HIGH STATE VOLTAGE (V)
V OL, OUTPUT LOW STATE VOLTAGE (V)
V IH V IL , INPUT THRESHOLD VOLTAGE (V)
Figure 3. Input Threshold Voltage

versus Temperature
15.0
VCC = 15 V
TA = 25C
14.6
14.2
13.8
13.4
13.0
0.1
0.2
0.3
0.4
0.5
ISource, OUTPUT SOURCE CURRENT (A)
45
MC33153
Figure 10. Fault Output Voltage
versus Current Sense Input Voltage
Figure 9. Drive Output Voltage

versus Current Sense Input Voltage
12
10
8.0
6.0
4.0
2.0
55
60
65
70
75
10
8.0
6.0
4.0
2.0
110
120
130
140
150
VPin 1, CURRENT SENSE INPUT VOLTAGE (mV)
VPin 1, CURRENT SENSE INPUT VOLTAGE (V)
Figure 11. Overcurrent Protection Threshold

Voltage versus Temperature
Figure 12. Overcurrent Protection Threshold

Voltage versus Supply Voltage
70
VCC = 15 V
68
66
64
62
60
60 40
20
20
40
60
80
100
120
140
160
70
TA = 25C
68
66
64
62
60
12
14
16
18
20
Figure 13. Short Circuit Comparator Threshold

Voltage versus Temperature
Figure 14. Short Circuit Comparator Threshold

Voltage versus Supply Voltage
135
VCC = 15 V
130
125
60
40
20
20
40
60
80
46
VCC = 15 V
VPin 4 = 0 V
VPin 8 > 7.0 V
TA = 25C
12
0
100
80
V SOC , OVERCURRENT THRESHOLD VOLTAGE (mV)
V SOC , OVERCURRENT THRESHOLD VOLTAGE (mV)
0
50
VSSC, SHORT CIRCUIT THRESHOLD VOLTAGE (mV)
V Pin 7, FAULT OUTPUT VOLTAGE (V)
14
VCC = 15 V
VPin 4 = 0 V
VPin 8 > 7.0 V
TA = 25C
14
100
120
140
VSSC, SHORT CIRCUIT THRESHOLD VOLTAGE (mV)
VO , DRIVE OUTPUT VOLTAGE (V)
16
135
TA = 25C
130
125
12
14
16
18
20
Figure 16. Drive Output Voltage versus Fault

Blanking/Desaturation Input Voltage
Figure 15. Current Sense Input Current

versus Voltage
0
16
ISI , CURRENT SENSE INPUT CURRENT ( A)
MC33153
VCC = 15 V
TA = 25C
0.5
1.0
1.5
2.0
4.0
6.0
8.0
10
12
14
14
VCC = 15 V
VPin 4 = 0 V
VPin 1 > 100 mV
TA = 25C
12
10
8.0
6.0
4.0
2.0
0
6.0
16
VPin 1, CURRENT SENSE INPUT VOLTAGE (V)
6.6
VCC = 15 V
VPin 4 = 0 V
VPin 1 > 100 mV
6.5
40
20
20
40
60
80
100
120
140
6.6
6.8
7.0
6.6
VPin 4 = 0 V
VPin 1 > 100 mV
TA = 25C
6.5
6.4
12
14
16
18
20
Figure 19. Fault Blanking/Desaturation Current

Source versus Temperature
Figure 20. Fault Blanking/Desaturation Current

Source versus Supply Voltage
200
200
VCC = 15 V
VPin 8 = 0 V
220
Ichg, CURRENT SOURCE ( A)
Ichg, CURRENT SOURCE ( A)
6.4
Figure 18. Fault Blanking/Desaturation Comparator

Threshold Voltage versus Supply Voltage
V BDT , FAULT BLANKING/DESATURATION
THRESHOLD VOLTAGE (V)
V BDT , FAULT BLANKING/DESATURATION

THRESHOLD VOLTAGE (V)
Figure 17. Fault Blanking/Desaturation Comparator

Threshold Voltage versus Temperature
6.4
60
6.2
VPin 8, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)
240
260
280
300
60
40
20
20
40
60
80
100
120
140
VPin 4 = 0 V
VPin 8 = 0 V
TA = 25C
220
240
260
280
300
5.0
10
15
20
47
MC33153
Figure 22. Fault Blanking/Desaturation Discharge
Current versus Input Voltage
Figure 21. Fault Blanking/Desaturation

Current Source versus Input Voltage
2.5
I dscg, DISCHARGE CURRENT (mA)
I chg, CURRENT SOURCE ( A)
200
VCC = 15 V
VPin 4 = 0 V
TA = 25C
220
240
260
280
300
2.0
4.0
6.0
8.0
10
12
14
0.5
VCC = 15 V
VPin 4 = 5.0 V
TA = 25C
4.0
12
16
Figure 23. Fault Output Low State Voltage

versus Sink Current
Figure 24. Fault Output High State Voltage

versus Source Current
14.0
VCC = 15 V
VPin 4 = 5.0 V
TA = 25C
0.8
0.6
0.4
0.2
2.0
4.0
6.0
8.0
13.6
13.4
13.2
13.0
10
VCC = 15 V
VPin 4 = 0 V
VPin 1 = 1.0 V
Pin 8 = Open
TA = 25C
13.8
2.0
4.0
10
12
14
16
Figure 25. Drive Output Voltage

versus Supply Voltage
Figure 26. UVLO Thresholds

versus Temperature
18
20
120
140
12.5
Vth(UVLO), UNDERVOLTAGE
LOCKOUT THRESHOLD (V)
10
TurnOff
Threshold
6.0
4.0
Startup
Threshold
2.0
0
10
8.0
ISource, OUTPUT SOURCE CURRENT (mA)
12
8.0
6.0
ISink, OUTPUT SINK CURRENT (mA)
Startup Threshold
VCC Increasing
14
11
12
13
48
8.0
VPin 8, INPUT VOLTAGE (V)
VPin 7 , FAULT OUTPUT VOLTAGE (V)
VPin 7 , FAULT OUTPUT VOLTAGE (V)
1.0
VPin 8, INPUT VOLTAGE (V)
16
1.5
0.5
16
1.0
2.0
VPin 4 = 0 V
TA = 25C
14
15
12.0
11.5
TurnOff Threshold
VCC Decreasing
11.0
10.5
60
40
20
20
40
60
80
100
MC33153
Figure 27. Supply Current versus
Supply Voltage
Figure 28. Supply Current versus Temperature

10
Output High
8.0
ICC, SUPPLY CURRENT (mA)
10
Output Low
6.0
4.0
TA = 25C
2.0
0
5.0
10
15
20
8.0
6.0
4.0
VCC = 15 V
VPin 4 = VCC
Drive Output Open
2.0
0
60
40
20
20
40
60
80
100
120
140
Figure 29. Supply Current versus Input Frequency
80
CL = 10 nF
VCC = 15 V
TA = 25C
= 5.0 nF
60
40
= 2.0 nF
20
= 1.0 nF
0
1.0
10
100
1000
f, INPUT FREQUENCY (Hz)
OPERATING DESCRIPTION
GATE DRIVE
Controlling Switching Times
The most important design aspect of an IGBT gate drive is
optimization of the switching characteristics. The switching
characteristics are especially important in motor control
applications in which PWM transistors are used in a bridge
configuration. In these applications, the gate drive circuit
components should be selected to optimize turnon, turnoff
and offstate impedance. A single resistor may be used to
control both turnon and turnoff as shown in Figure 30.
However, the resistor value selected must be a compromise
in turnon abruptness and turnoff losses. Using a single
resistor is normally suitable only for very low frequency
PWM. An optimized gate drive output stage is shown in Figure 31. This circuit allows turnon and turnoff to be optimized separately. The turnon resistor, Ron, provides control
over the IGBT turnon speed. In motor control circuits, the
resistor sets the turnon di/dt that controls how fast the free
wheel diode is cleared. The interaction of the IGBT and free
wheeling diode determines the turnon dv/dt. Excessive
turnon dv/dt is a common problem in halfbridge circuits.
The turnoff resistor, Roff, controls the turnoff speed and

ensures that the IGBT remains off under commutation
stresses. Turnoff is critical to obtain low switching losses.
While IGBTs exhibit a fixed minimum loss due to minority carrier recombination, a slow gate drive will dominate the turn
off losses. This is particularly true for fast IGBTs. It is also
possible to turnoff an IGBT too fast. Excessive turnoff
speed will result in large overshoot voltages. Normally, the
turnoff resistor is a small fraction of the turnon resistor.
The MC33153 contains a bipolar totem pole output stage
that is capable of sourcing 1.0 amp and sinking 2.0 amps
peak. This output also contains a pull down resistor to ensure
that the IGBT is off whenever there is insufficient VCC to the
MC33153.
In a PWM inverter, IGBTs are used in a halfbridge configuration. Thus, at least one device is always off. While the
IGBT is in the offstate, it will be subjected to changes in voltage caused by the other devices. This is particularly a problem when the opposite transistor turns on.
49
MC33153
When the lower device is turned on, clearing the upper
diode, the turnon dv/dt of the lower device appears across
the collector emitter of the upper device. To eliminate shoot
through currents, it is necessary to provide a low sink impedance to the device that is in the offstate. In most applications
the turnoff resistor can be made small enough to hold off the
device that is under commutation without causing excessively fast turnoff speeds.
Figure 30. Using a Single Gate Resistor

VCC
Optoisolator Output Fault
IGBT
Output
The MC33153 has an active high fault output. The fault

output may be easily interfaced to an optoisolator. While it is
important that all faults are properly reported, it is equally
important that no false signals are propagated. Again, a high
dv/dt optoisolator should be used.
The LED drive provides a resistor programmable current
of 10 to 20 mA when on, and provides a low impedance path
when off. An active high output, resistor, and small signal
diode provide an excellent LED driver. This circuit is shown in
Figure 32.
Rg
VEE
VEE
3
VEE
Figure 31. Using Separate Resistors

for TurnOn and TurnOff
VCC
Figure 32. Output Fault Optoisolator
IGBT
Ron
Output
5
Doff
Roff
VEE
VEE
The MC33153 may be used with an optically isolated

input. The optoisolator can be used to provide level shifting,
and if desired, isolation from ac line voltages. An optoisolator
with a very high dv/dt capability should be used, such as the
Hewlett Packard HCPL4053. The IGBT gate turnon resistor
should be set large enough to ensure that the optos dv/dt
capability is not exceeded. Like most optoisolators, the
HCPL4053 has an active low opencollector output. Thus,
when the LED is on, the output will be low. The MC33153 has
an inverting input pin to interface directly with an optoisolator
using a pull up resistor. The input may also be interfaced
directly to 5.0 V CMOS logic or a microcontroller.
Short Circuit
Latch Output
VCC
Q
7
VEE
VEE
VEE
UNDERVOLTAGE LOCKOUT
A negative bias voltage can be used to drive the IGBT into
the offstate. This is a practice carried over from bipolar Darlington drives and is generally not required for IGBTs. However, a negative bias will reduce the possibility of
shootthrough. The MC33153 has separate pins for VEE and
Kelvin Ground. This permits operation using a +15/5.0 V
supply.
INTERFACING WITH OPTOISOLATORS

Isolated Input
410
It is desirable to protect an IGBT from insufficient gate voltage. IGBTs require 15 V on the gate to achieve the rated on
voltage. At gate voltages below 13 V, the onvoltage
increases dramatically, especially at higher currents. At very
low gate voltages, below 10 V, the IGBT may operate in the
linear region and quickly overheat. Many PWM motor drives
use a bootstrap supply for the upper gate drive. The UVLO
provides protection for the IGBT in case the bootstrap capacitor discharges.
The MC33153 will typically start up at about 12 V. The
UVLO circuit has about 1.0 V of hysteresis and will disable
the output if the supply voltage falls below about 11V.
MC33153
PROTECTION CIRCUITRY
Desaturation Protection
Bipolar Power circuits have commonly used what is known
as Desaturation Detection. This involves monitoring the collector voltage and turning off the device if this voltage rises
above a certain limit. A bipolar transistor will only conduct a
certain amount of current for a given base drive. When the
base is overdriven, the device is in saturation. When the collector current rises above the knee, the device pulls out of
saturation. The maximum current the device will conduct in
the linear region is a function of the base current and the dc
current gain (hFE) of the transistor.
The output characteristics of an IGBT are similar to a Bipolar device. However, the output current is a function of gate
voltage instead of current. The maximum current depends on
the gate voltage and the device type. IGBTs tend to have a
very high transconductance and a much higher current density under a short circuit than a bipolar device. Motor control
IGBTs are designed for a lower current density under shorted
conditions and a longer short circuit survival time.
The best method for detecting desaturation is the use of a
high voltage clamp diode and a comparator. The MC33153
has a Fault Blanking/Desaturation Comparator which senses
the collector voltage and provides an output indicating when
the device is not fully saturated. Diode D1 is an external high
voltage diode with a rated voltage comparable to the power
device. When the IGBT is on and saturated, D1 will pull
down the voltage on the Fault Blanking/Desaturation Input.
When the IGBT pulls out of saturation or is off, the current
source will pull up the input and trip the comparator. The
comparator threshold is 6.5 V, allowing a maximum onvoltage of about 5.8 V.
A fault exists when the gate input is high and VCE is
greater than the maximum allowable VCE(sat). The output of
the Desaturation Comparator is ANDed with the gate input
signal and fed into the Short Circuit and Overcurrent Latches.
The Overcurrent Latch will turnoff the IGBT for the remainder of the cycle when a fault is detected. When input goes
high, both latches are reset. The reference voltage is tied to
the Kelvin Ground instead of the VEE to make the threshold
independent of negative gate bias. Note that for proper
operation of the Desaturation Comparator and the Fault Output, the Current Sense Input must be biased above the Overcurrent and Short Circuit Comparator thresholds. This can be
accomplished by connecting Pin 1 to VCC.
Figure 33. Desaturation Detection
Desaturation
Comparator
VCC
VCC
270 A
D1
8
Kelvin
Gnd
Vref
6.5 V
VEE
The MC33153 also features a programmable fault blanking time. During turnon, the IGBT must clear the opposing
freewheeling diode. The collector voltage will remain high
until the diode is cleared. Once the diode has been cleared,
the voltage will come down quickly to the VCE(sat) of the
device. Following turnon, there is normally considerable
ringing on the collector due to the COSS capacitance of the
IGBTs and the parasitic wiring inductance. The fault signal
from the Desaturation Comparator must be blanked sufficiently to allow the diode to be cleared and the ringing to
settle out.
The blanking function uses an NPN transistor to clamp the
comparator input when the gate input is low. When the input
is switched high, the clamp transistor will turn off, allowing
the internal current source to charge the blanking capacitor.
The time required for the blanking capacitor to charge up
from the onvoltage of the internal NPN transistor to the trip
voltage of the comparator is the blanking time.
If a short circuit occurs after the IGBT is turned on and saturated, the delay time will be the time required for the current
source to charge up the blanking capacitor from the VCE(sat)
level of the IGBT to the trip voltage of the comparator. Fault
blanking can be disabled by leaving Pin 8 unconnected.
Sense IGBT Protection
Another approach to protecting the IGBTs is to sense the
emitter current using a current shunt or Sense IGBTs. This
method has the advantage of being able to use high gain
IGBTs which do not have any inherent short circuit capability.
Current sense IGBTs work as well as current sense MOSFETs in most circumstances. However, the basic problem of
working with very low sense voltages still exists. Sense
IGBTs sense current through the channel and are therefore
linear with respect to the collector current. Because IGBTs
have a very low incremental onresistance, sense IGBTs
behave much like lowon resistance current sense MOSFETs. The output voltage of a properly terminated sense
IGBT is very low, normally less than 100 mV.
The sense IGBT approach requires fault blanking to prevent false tripping during turnon. The sense IGBT also
requires that the sense signal is ignored while the gate is low.
This is because the mirror output normally produces large
transient voltages during both turnon and turnoff due to the
collector to mirror capacitance. With nonsensing types of
IGBTs, a low resistance current shunt (5.0 to 50 m) can be
used to sense the emitter current. When the output is an
actual short circuit, the inductance will be very low. Since the
blanking circuit provides a fixed minimum ontime, the peak
current under a short circuit can be very high. A short circuit
discern function is implemented by the second comparator
which has a higher trip voltage. The short circuit signal is
latched and appears at the Fault Output. When a short circuit
is detected, the IGBT should be turnedoff for several milliseconds allowing it to cool down before it is turned back on.
The sense circuit is very similar to the desaturation circuit. It
is possible to build a combination circuit that provides protection for both Short Circuit capable IGBTs and Sense IGBTs.
411
MC33153
APPLICATION INFORMATION
Figure 34 shows a basic IGBT driver application. When
driven from an optoisolator, an input pull up resistor is
required. This resistor value should be set to bias the output
transistor at the desired current. A decoupling capacitor
should be placed close to the IC to minimize switching noise.
A bootstrap diode may be used for a floating supply. If the
protection features are not required, then both the Fault
Blanking/Desaturation and Current Sense Inputs should both
be connected to the Kelvin Ground (Pin 2). When used with a
single supply, the Kelvin Ground and VEE pins should be connected together. Separate gate resistors are recommended
to optimize the turnon and turnoff drive.
If desaturation protection is desired, a high voltage diode

is connected to the Fault Blanking/Desaturation pin. The
blanking capacitor should be connected from the Desaturation pin to the VEE pin. If a dual supply is used, the blanking
capacitor should be connected to the Kelvin Ground. The
Current Sense Input should be tied high because the two
comparator outputs are ANDed together. Although the
reverse voltage on collector of the IGBT is clamped to the
emitter by the freewheeling diode, there is normally considerable inductance within the package itself. A small resistor
in series with the diode can be used to protect the IC from
reverse voltage transients.
Figure 34. Basic Application
Figure 36. Desaturation Application

+18 V
+18 V
Bootstrap
B+
6
VCC Desat/ 8
Blank
5
Output
Fault
Fault
6
VCC Desat/ 8
Blank
Output
MC33153
4
Sense
Input
VEE
3
Gnd
1
2
Figure 35. Dual Supply Application

+15 V
Fault
6
VCC Desat/ 8
Blank
5
Output
MC33153
4
Sense
Input
VEE
3
CBlank
MC33153
Gnd
1
2
Sense
Input
VEE
3
Gnd
5
1
2
When using sense IGBTs or a sense resistor, the sense

voltage is applied to the Current Sense Input. The sense trip
voltages are referenced to the Kelvin Ground pin. The sense
voltage is very small, typically about 65 mV, and sensitive to
noise. Therefore, the sense and ground return conductors
should be routed as a differential pair. An RC filter is useful in
filtering any high frequency noise. A blanking capacitor is
connected from the blanking pin to VEE. The stray capacitance on the blanking pin provides a very small level of blanking if left open. The blanking pin should not be grounded
when using current sensing, that would disable the sense.
The blanking pin should never be tied high, that would short
out the clamp transistor.
Figure 37. Sense IGBT Application
+18 V
5.0 V
When used in a dual supply application as in Figure 35, the

Kelvin Ground should be connected to the emitter of the
IGBT. If the protection features are not used, then both the
Fault Blanking/Desaturation and the Current Sense Inputs
should be connected to Ground. The input optoisolator
should always be referenced to VEE.
412
Fault
6
VCC Desat/ 8
Blank
5
Output
MC33153
Sense
4
Input
VEE
3
Gnd
1
2
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Product Preview
MGP20N14CL
SMARTDISCRETES
Internally Clamped, N-Channel
IGBT
20 AMPERES
VOLTAGE CLAMPED
NCHANNEL IGBT
Vce(on) = 1.9 VOLTS
135 VOLTS (CLAMPED)
This Logic Level Insulated Gate Bipolar Transistor (IGBT)

features GateEmitter ESD protection, GateCollector overvoltage
protection from SMARTDISCRETES monolithic circuitry for
usage as an Ignition Coil Driver.
Temperature Compensated GateDrain Clamp Limits Stress
Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
Low Saturation Voltage
High Pulsed Current Capability
G
G
C
Rge
CASE 221A06, Style 9

TO220AB
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCES
CLAMPED
Vdc
CollectorGate Voltage
VCGR
CLAMPED
Vdc
GateEmitter Voltage
VGE
CLAMPED
Vdc
Collector Current Continuous @ TC = 25C

Collector Current Single Pulsed (tp = 10 ms)
IC
ICM
20
60
Adc
Apk
Total Power Dissipation @ TC = 25C (TO220)

Derate Above 25C
PD
150
1.0
Watts
W/C
TJ, Tstg
55 to 175
"
Operating and Storage Temperature Range

Single Pulse CollectorEmitter Avalanche Energy @ Starting TJ = 25C
(VCC = 80 V, VGE = 5 V, Peak IL = 10 A, L = 10 mH)
EAS
mJ
500
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case (TO220)
Thermal Resistance Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds
Mounting Torque, 632 or M3 screw
RqJC
RqJA
1.0
62.5
C/W
TL
275
10 lbfin (1.13 Nm)
This document contains information on a new product. Specifications and information herein are subject to change without notice.
413
MGP20N14CL
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Clamp Voltage
(IClamp = 10 mA, TJ = 40 to 150C)
BVCES
Vdc
135
Zero Gate Voltage Collector Current

(VCE = 100 V, VGE = 0 V)
(VCE = 100 V, VGE = 0 V, TJ = 150C)
ICES
GateEmitter Clamp Voltage (IG = 1 mA)
BVGES
10
IGES
1.0
1.0
1.5
4.4
2.0
GateEmitter Leakage Current (VGE =
"5 V, VCE = 0 V)
10
100
mA
Vdc
mA
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
Threshold Temperature Coefficient (Negative)
VCE(th)
CollectorEmitter OnVoltage
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 175C)
VCE(on)
Forward Transconductance (VCE
u 15 V, IC = 10 A)
V
mV/C
V
1.9
1.8
gfs
8.0
15
Mhos
Ciss
430
600
pF
Coss
182
250
Crss
48
100
td(on)
TBD
TBD
tr
TBD
TBD
td(off)
TBD
TBD
tf
TBD
TBD
Qg
14
20
Qgs
3.0
Qgd
6.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VCC = 68 V, IC = 20 A,
VGE = 5 V, RG = 9.1 W)
Fall Time
Total Gate Charge
GateEmitter Charge
(VCC = 108 V,
V IC = 20 A,
A
VGE = 5 V)
GateCollector Charge
ns
nC
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
414
MOTOROLA
Advanced Information
MGP20N35CL
SMARTDISCRETES
IGBT
20 AMPERES
VOLTAGE CLAMPED
NCHANNEL IGBT
Vce(on) = 1.8 VOLTS
350 VOLTS (CLAMPED)

Applied to Load
Microprocessors
G
G
C
Rge

TO220AB

Rating
Symbol
Value
Unit
VCES
CLAMPED
Vdc
VCGR
CLAMPED
Vdc
VGE
CLAMPED
Vdc
IC
20
Adc
ICR
12
Apk
PD
150
Watts
ESD
3.5
kV
TJ, Tstg
55 to 175
RqJC
RqJA
1.0
62.5
C/W
TL
275
GateEmitter Voltage
Reversed Collector Current pulse width
t 100 ms

Electrostatic Voltage GateEmitter
10 lbfin (1.13 Nm)
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS

Single Pulse CollectorEmitter Avalanche Energy
@ Starting TJ = 25C
@ Starting TJ = 150C
EAS
mJ
550
150
415
MGP20N35CL
Characteristic
Symbol
Min
Typ
Max
320
350
380
1.0
200
Unit
OFF CHARACTERISTICS
CollectortoEmitter Breakdown Voltage
(IClamp = 10 mA, TJ = 40 to 150C)
BVCES

(VCE = 250 V, VGE = 0 V, TJ = 125C)
(VCE = 15 V, VGE = 0 V, TJ = 125C)
ICES
Resistance GateEmitter (TJ = 40 to 150C)
RGE
10k
16k
30k
GateEmitter Breakdown Voltage (IG = 2 mA)
BVGES
11
13
15
"V
ICES
100
mA
BVCER
26
40
120
1.0
0.75
1.7
2.4
1.8
1.1
1.4
1.4
1.4
1.9
1.8
gfs
10
16
pF
CollectorEmitter Reverse Leakage (VCE = 15 V, TJ = 40 to 150C)

CollectorEmitter Reversed Breakdown Voltage (IE = 75 mA)
Vdc
mA
mA
(VCE = VGE, IC = 1 mA, TJ = 150C)
VGE(th)
(VGE = 5 V, IC = 5 A)
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 150C)
VCE(on)
u 50 V, IC = 10 A)
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
Ciss
2800
Coss
200
Crss
25

Total Gate Charge
GateEmitter Charge
Qg
45
80
Qgs
8.0
Qgd
20
( CC = 320 V, IC = 20 A,
(V
L = 200 mH, RG = 1 KW)
td(off)
TBD
TBD
tf
TBD
TBD
((VCC = 14 V, IC = 20 A,
L = 200 mH, RG = 1 KW)
td(on)
TBD
TBD
tr
TBD
TBD
(VCC = 280 V,
V IC = 20 A,
A
VGE = 5 V)
TurnOff Delay Time
Fall Time
TurnOn Delay Time
Rise Time
nC
416
MGP20N35CL
TYPICAL ELECTRICAL CHARACTERISTICS
40
VGE = 10 V
I C , COLLECTOR CURRENT (AMPS)
TJ = 25C
30
4V
20
10
3V
0
20
3V
10
10
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25C
VCE = 10 V
30
20
TJ = 125C
25C
10
2.2
VGE = 5 V
2.0
IC = 20 A
1.8
15 A
1.6
10 A
1.4
1.2
1.0
50
50
100
150
VGE, GATETOEMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (C)
Figure 4. CollectortoEmitter Saturation

Voltage versus Junction Temperature
10000
1000
VCE = 0 V
TJ = 25C
Ciss
VCE = 0 V
1000
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
4V
40
TJ = 125C
5V
30
10
VCE , COLLECTORTOEMITTER VOLTAGE (VOLTS)
40
5V
VGE = 10 V
Coss
100
Crss
10
TJ = 25C
Ciss
100
10
Coss
Crss
1.0
25
50
75
100
125
150
175
200
1.0
10
100
1000
COLLECTORTOEMITTER VOLTAGE (VOLTS)
DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 6. High Voltage Capacitance Variation
417
Qg
6
Qgs
Qgd
20
10
30
20
20
TF
10
2000
1000
10
3000
4000
Figure 7. GatetoEmitter and

CollectortoEmitter Voltage vs Total Charge
Figure 8. Total Switching Losses

versus Gate Temperature
30
Td(off)
20
3
VDD = 320 V
VGE = 5 V
TJ = 25C
IC = 20 A
TF
10
2000
1000
3000
4000
2
1
0
5000
26
VCC = 320 V
VGE = 5 V
RG = 1000 W
L = 200 mH
IC = 20 A
24
22
Td(off)
20
Eoff
18
16
14
TF
12
25
75
50
100
RG, GATE RESISTANCE (OHMS)
TC, CASE TEMPERATURE (C)

versus Gate Resistance

versus Case Temperature
VCC = 320 V
VGE = 5 V
RG = 1000 W
L = 200 mH
TJ = 125C
Eoff
15
Td(off)
15
10
10
SWITCHING TIME ( m S)
20
4
125
20
25
25
0
5000
40
30
Eoff
20
Td(off)
30
TOTAL SWITCHING ENERGY LOSSES (mJ)
40
40
50
Eoff
Qg, TOTAL GATE CHARGE (nC)
40
60
VDD = 320 V
VGE = 5 V
TJ = 125C
IC = 20 A
50
60
LATCH CURRENT (AMPS)
TJ = 25C
IC = 20 A
50
SWITCHING TIME ( mS)
MGP20N35CL
3 mH
16
12
10 mH
8.0
4.0
TF
5
418
10
15
5
20
25
50
75
100
125
IC, COLLECTORTOEMITTER CURRENT (AMPS)
TEMPERATURE (C)

versus Collector Current
Figure 12. Latch Current versus Temperature
MGP20N35CL
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
1.0E 05
1.0E 04
1.0E 03
1.0E 02
1.0E 01
RJC(t) = r(t) RJC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)
1.0E+00
1.0E+01
t, TIME (s)
Figure 13. Thermal Response
419
MOTOROLA
MGP20N40CL
SMARTDISCRETES
IGBT
20 AMPERES
VOLTAGE CLAMPED
NCHANNEL IGBT
Vce(on) = 1.8 VOLTS
400 VOLTS (CLAMPED)

Applied to Load
Microprocessors
G
G
C
Rge

TO220AB

Rating
Symbol
Value
Unit
VCES
CLAMPED
Vdc
VCGR
CLAMPED
Vdc
VGE
CLAMPED
Vdc
IC
20
Adc
ICR
12
Apk
PD
150
Watts
ESD
3.5
kV
TJ, Tstg
55 to 175
RqJC
RqJA
1.0
62.5
C/W
TL
275
GateEmitter Voltage
Reversed Collector Current pulse width
t 100 ms

Electrostatic Voltage GateEmitter
Junction to Ambient
10 lbfin (1.13 Nm)
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS

Single Pulse CollectorEmitter Avalanche Energy
@ Starting TJ = 25C
@ Starting TJ = 150C
EAS
mJ
550
150
420
MGP20N40CL
Characteristic
Symbol
Min
Typ
Max
380
405
440
1.0
200
Unit
OFF CHARACTERISTICS
(IClamp = 10 mA, TJ = 40 to 150C)
BVCES

(VCE = 300 V, VGE = 0 V, TJ = 125C)
(VCE = 15 V, VGE = 0 V, TJ = 125C)
ICES
Resistance GateEmitter (TJ = 40 to 150C)
RGE
10k
16k
30k
GateEmitter Breakdown Voltage (IG = 2 mA)
BVGES
11
13
15
"V
ICES
mA
BVCER
26
40
120
1.0
0.75
1.7
2.4
1.8
1.1
1.4
1.4
1.4
1.9
1.8
gfs
10
16
pF
CollectorEmitter Reverse Leakage (VCE = 15 V, TJ = 40 to 150C)

CollectorEmitter Reversed Breakdown Voltage (IE = 75 mA)
Vdc
mA
mA
(VCE = VGE, IC = 1 mA, TJ = 150C)
VGE(th)
(VGE = 5 V, IC = 5 A)
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 150C)
VCE(on)
u 50 V, IC = 10 A)
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
Ciss
2800
Coss
200
Crss
25

Total Gate Charge
GateEmitter Charge
Qg
45
80
Qgs
8.0
Qgd
20
( CC = 320 V, IC = 20 A,
(V
L = 200 mH, RG = 1 KW)
td(off)
TBD
TBD
tf
TBD
TBD
((VCC = 14 V, IC = 20 A,
L = 200 mH, RG = 1 KW)
td(on)
TBD
TBD
tr
TBD
TBD
(VCC = 280 V,
V IC = 20 A,
A
VGE = 5 V)
TurnOff Delay Time
Fall Time
TurnOn Delay Time
Rise Time
nC
421
MGP20N40CL
40
VGE = 10 V
TJ = 25C
30
4V
20
10
3V
0
20
3V
10
10
VCE = 10 V
30
20
TJ = 125C
25C
10
2.2
VGE = 5 V
2.0
IC = 20 A
1.8
15 A
1.6
10 A
1.4
1.2
1.0
50
50
100
150

10000
1000
VCE = 0 V
TJ = 25C
Ciss
VGS = 0 V
1000
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
4V
40
TJ = 125C
5V
30
10
40
5V
VGE = 10 V
Coss
100
Crss
10
TJ = 25C
Ciss
100
10
Coss
Crss
1.0
422
25
50
75
100
125
150
175
200
1.0
10
100
1000
Figure 6. High Voltage Capacitance Variation
Qg
6
Qgs
Qgd
20
10
30
20
20
TF
10
2000
1000
10
3000
4000

CollectortoEmitter Voltage vs Total Charge

versus Gate Temperature
30
Td(off)
20
3
VDD = 320 V
VGE = 5 V
TJ = 25C
IC = 20 A
TF
10
2000
1000
3000
4000
2
1
0
5000
26
VCC = 320 V
VGE = 5 V
RG = 1000 W
L = 200 mH
IC = 20 A
24
22
Td(off)
20
Eoff
18
16
14
TF
12
25
75
50
100


versus Case Temperature
VCC = 320 V
VGE = 5 V
RG = 1000 W
L = 200 mH
TJ = 125C
Eoff
15
Td(off)
15
10
10
20
4
125
20
25
25
0
5000
40
30
Eoff
20
Td(off)
30
40
40
50
Eoff
40
60
VDD = 320 V
VGE = 5 V
TJ = 125C
IC = 20 A
50
60
LATCH CURRENT (AMPS)
TJ = 25C
IC = 20 A
50
SWITCHING TIME ( mS)
MGP20N40CL
3 mH
16
12
10 mH
8.0
4.0
TF
5
10
15
5
20
25
50
75
100
125
TEMPERATURE (C)

versus Collector Current
Figure 12. Latch Current versus Temperature
423
MGP20N40CL
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E 05
1.0E 04
1.0E 03
1.0E 02
1.0E 01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
424
MOTOROLA
Designer's
Data Sheet
MGW12N120
Insulated Gate Bipolar Transistor
Motorola Preferred Device
NChannel EnhancementMode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltageblocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
IGBT IN TO247
12 A @ 90C
20 A @ 25C
1200 VOLTS
SHORT CIRCUIT RATED
Industry Standard High Power TO247 Package with

Isolated Mounting Hole
High Speed Eoff: 160 mJ/A typical at 125C
High Short Circuit Capability 10 ms minimum
Robust High Voltage Termination
C
G
G
C
E
E
CASE 340F03, Style 4
TO247AE

Rating
Symbol
Value
Unit
VCES
1200
Vdc
CollectorGate Voltage (RGE = 1.0 M)
VCGR
1200
Vdc
GateEmitter Voltage Continuous
VGE
20
Vdc

Collector Current Repetitive Pulsed Current (1)
IC25
IC90
ICM
20
12
40
Adc
PD
123
0.98
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJA
1.0
45
C/W
TL
260
Total Power Dissipation @ TC = 25C

Derate above 25C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 )
Thermal Resistance Junction to Case IGBT
Apk
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.

Designers Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves representing boundaries on device characteristics are given to facilitate worst case design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
425
MGW12N120
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
1200
870
mV/C
25
Vdc
100
2500
250
2.51
2.36
3.21
3.37
4.42
4.0
6.0
10
8.0
mV/C
gfe
12
Mhos
pF
OFF CHARACTERISTICS
(VGE = 0 Vdc, IC = 25 Adc)
Temperature Coefficient (Positive)
BVCES
EmittertoCollector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
BVECS

(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125C)
ICES
GateBody Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc)
IGES
Vdc
Adc
nAdc
CollectortoEmitter OnState Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125C)
VCE(on)

(VCE = VGE, IC = 1.0 mAdc)
VGE(th)
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
Cies
930
Coes
126
Cres
16
td(on)
74
tr
83
td(off)
76
tf
231
Eoff
0.55
1.33
mJ
td(on)
66
ns

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VCC = 720 Vdc, IC = 10 Adc,

VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 , TJ = 25
25C)
C)
Energy losses include tail
TurnOff Switching Loss

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VCC = 720 Vdc, IC = 10 Adc,

Vd L = 300 mH
VGE = 15 Vdc,
RG = 20 , TJ = 125C)
125 C)

Gate Charge
(VCC = 720 Vdc,
Vd IC = 10 Adc,
Ad
VGE = 15 Vdc)
ns
tr
87
td(off)
120
tf
575
Eoff
1.49
mJ
QT
31
nC
Q1
13
Q2
14
13
INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance
(Measured from the emitter lead 0.25 from package to emitter bond pad)
LE
nH
426
MGW12N120
40
TJ = 125C
IC, COLLECTOR CURRENT (AMPS)
40
VGE = 20 V
TJ = 25C
30
17.5 V
20
15 V
12.5 V
10
VGE = 20 V
30
17.5 V
20
15 V
12.5 V
10
7.5 V
0
10 V
0
VCE = 10 V
250 s PULSE WIDTH
16
TJ = 125C
25C
4
0
C, CAPACITANCE (pF)
1600
11
13
15
3.8
3.6
IC = 10 A
3.4
3.2
7.5 A
3.0
2.8
2.6
5A
2.4
VGE = 15 V
250 s PULSE WIDTH
2.2
2
50
50
100
150

VCE = 0 V
Cies
800
400
Coes
Cres
0
1200
24
12

20
10
15
20
25
16
QT
12
Q1
Q2
TJ = 25C
IC = 10 A
VGE = 15 V
0
10
15
20
25
35
30
GATETOEMITTER OR COLLECTORTOEMITTER VOLTAGE (VOLTS)
Figure 6. GatetoEmitter Voltage versus

Total Charge
427
2.5
IC = 10 A
7.5 A
1.5
5A
1
VCC = 720 V
VGE = 15 V
TJ = 125C
10
20
30
40
50
1.6
1.4
1.2
6
5A
25
75
50
100
125
10
150
25
20
TJ = 125C
15
10
TJ = 25C
5
0
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 9. Total Switching Losses versus

CollectortoEmitter Current
Figure 10. Maximum Forward Drop versus

Instantaneous Forward Current
IC, COLLECTORTOEMITTER CURRENT (A)
7.5 A

Case Temperature
1.8
IC = 10 A

Gate Resistance
VCC = 720 V
VGE = 15 V
RG = 20
TJ = 125C
VCC = 720 V
VGE = 15 V
RG = 20
2.4
2.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
I , INSTANTANEOUS FORWARD CURRENT (AMPS)

F
MGW12N120
100
10
1
VGE = 15 V
RGE = 20
TJ 125C
0.1
10
100
1000
10000
Figure 11. Reverse Biased

Safe Operating Area
428
MGW12N120
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
429
MOTOROLA
Data Sheet
with Anti-Parallel Diode
Designer's
MGW12N120D
IGBT & DIODE IN TO247

12 A @ 90C
20 A @ 25C
1200 VOLTS
SHORT CIRCUIT RATED
This Insulated Gate Bipolar Transistor (IGBT) is copackaged

with a soft recovery ultrafast rectifier and uses an advanced
Copackaged IGBTs save space, reduce assembly time and cost.
High Speed Eoff: 160 mJ per Amp typical at 125C
Soft Recovery Free Wheeling Diode is included in the package
Robust RBSOA
C
E

TO247AE

Symbol
Value
Unit
VCES
1200
Vdc
Rating
VCGR
1200
Vdc
VGE
20
Vdc

Continuous @ TC = 90C
Repetitive Pulsed Current (1)
IC25
IC90
ICM
20
12
40
Adc
PD
123
0.98
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJC
RJA
1.0
1.4
45
C/W
TL
260

Derate above 25C
Junction to Case Diode
Junction to Ambient
Apk

REV 1
430
MGW12N120D
Characteristic
Symbol
Min
Typ
Max
Unit
1200
870
100
2500
250
2.71
3.78
3.72
3.37
4.42
4.0
6.0
10
8.0
mV/C
gfe
12
Mhos
Cies
1003
pF
Coes
126
Cres
106
td(on)
74
OFF CHARACTERISTICS
BVCES

ICES
IGES
Vdc
mV/C
Adc
nAdc
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125C)
VCE(on)

VGE(th)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
(VCC = 720 Vdc

Vdc, IC = 10 Adc
Adc,
VGE = 15 Vdc,, L = 300 mH
RG = 20 , TJ = 25C)
tail
tr
83
td(off)
76
tf
231
Eoff
0.55
1.33
TurnOn Switching Loss
Eon
1.21
1.88
Total Switching Loss
Ets
1.76
3.21
td(on)
66
tr
87
td(off)
120
tf
575
Eoff
1.49
Eon
2.37
Ets
3.86
QT
29
Q1
13
Q2
12
2.26
1.37
2.86
3.32
4.18
TurnOff Delay Time

Fall Time
TurnOn Delay Time

Rise Time
TurnOff Delay Time
(VCC = 720 Vdc

Vdc, IC = 10 Adc
Adc,
VGE = 15 Vdc,, L = 300 mH
RG = 20 , TJ = 125C)
tail
Fall Time
Gate Charge
(VCC = 720 Vdc,
Vd IC = 10 Adc,
Ad
VGE = 15 Vdc)
ns
mJ
ns
mJ
nC
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 5.0 Adc)
(IEC = 5.0 Adc, TJ = 125C)
(IEC = 10 Adc)
VFEC
Vdc
(continued)
431
MGW12N120D
ELECTRICAL CHARACTERISTICS continued (TJ = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
trr
116
ns
ta
69
tb
47
QRR
0.36
trr
234
ns
ta
149
tb
85
QRR
1.40
13
DIODE CHARACTERISTICS continued

Reverse Recovery Time
((IF = 10 Adc, VR = 720 Vdc,
dIF/dt = 100 A/s)
Reverse Recovery Stored Charge
((IF = 10 Adc, VR = 720 Vdc,
dIF/dt = 100 A/s, TJ = 125C)

LE

nH

40
TJ = 125C
40
VGE = 20 V
TJ = 25C
30
17.5 V
20
15 V
12.5 V
10
VGE = 20 V
30
17.5 V
20
15 V
12.5 V
10
7.5 V
0
10 V
0
24
VCE = 10 V
250 s PULSE WIDTH
16
TJ = 125C
12
8
25C
4
0
11
13
432
15
20
3.8
3.6
IC = 10 A
3.4
3.2
7.5 A
3.0
2.8
2.6
5A
2.4
2.2
2
50
VGE = 15 V
250 s PULSE WIDTH
0
50
100
150

MGW12N120D
10000
1000
Cies
1000
Coes
100
Cies
VGE = 0 V
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
TJ = 25C
Cres
100
Coes
Cres
TJ = 25C
0
15
10
20
10
25
50
200
Figure 5b. High Voltage Capacitance

Variation
16
QT
12
Q1
Q2
TJ = 25C
IC = 20 A
40
20
60
2.5
7.5 A
1.5
5A
10
20
IC = 10 A
7.5 A
5A
50
75
100
50
2.4
125
150
VCC = 720 V
VGE = 15 V
RG = 20
TJ = 125C
2.2
2
1.8
1.6
1.4
1.2
1
25
40

Gate Resistance
VCC = 720 V
VGE = 15 V
RG = 20
30

CollectortoEmitter Voltage versus Total Charge
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
IC = 10 A
80
VCC = 720 V
VGE = 15 V
TJ = 125C
150
100
10
10

Case Temperature

433
25

F
MGW12N120D
20
TJ = 125C
15
10
TJ = 25C
5
0
100
10
0.1
VGE = 15 V
RGE = 20
TJ = 125C
1
10
100
1000


Safe Operating Area
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
434
MOTOROLA
Data Sheet
Designer's
MGW20N60D

20 A @ 90C
32 A @ 25C
600 VOLTS
SHORT CIRCUIT RATED

characteristics result in efficient operations at high frequencies.
Robust RBSOA
C
E

TO247AE
MAXIMUM RATINGS (TC = 25C unless otherwise noted)

Symbol
Value
Unit
VCES
600
Vdc
Rating
VCGR
600
Vdc
VGE
20
Vdc

IC25
IC90
ICM
32
20
64
Adc
PD
142
1.14
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJC
RJA
0.88
2.00
45
C/W
TL
260

Derate above 25C
Thermal Resistance
Junction to Case IGBT

Junction to Ambient
Apk
(1) Pulse width is limited by maximum junction temperature.

435
MGW20N60D
Characteristic
Symbol
Min
Typ
Max
Unit
600
870
100
2500
250
2.30
2.20
2.85
2.85
3.65
4.0
6.0
10
8.0
mV/C
gfe
12
Mhos
Cies
2280
pF
Coes
165
Cres
12
td(on)
59
OFF CHARACTERISTICS
BVCES

ICES
IGES
Vdc
mV/C
Adc
nAdc
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125C)
VCE(on)

(VCE = VGE, IC = 1 mAdc)
VGE(th)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
(VCC = 360 Vdc

Vdc, IC = 20 Adc
Adc,
VGE = 15 Vdc,, L = 300 mH
RG = 20 , TJ = 25C)
tail
tr
61
td(off)
150
tf
212
Eoff
0.60
0.85
Eon
0.75
Ets
1.35
td(on)
51
tr
77
td(off)
184
tf
392
Eoff
1.20
Eon
1.50
Ets
2.70
QT
74
Q1
19
Q2
27
1.50
1.30
1.70
1.90
2.15
TurnOff Delay Time

Fall Time
TurnOn Delay Time

Rise Time
TurnOff Delay Time
(VCC = 360 Vdc

Vdc, IC = 20 Adc
Adc,
VGE = 15 Vdc,, L = 300 mH
RG = 20 , TJ = 125C)
tail
Fall Time
Gate Charge
(VCC = 360 Vdc,
Vd IC = 20 Adc,
Ad
VGE = 15 Vdc)
ns
mJ
ns
mJ
nC
(IEC = 10 Adc)
(IEC = 10 Adc, TJ = 125C)
(IEC = 20 Adc)
436
VFEC
Vdc
(continued)
MGW20N60D
Characteristic
Symbol
Min
Typ
Max
Unit
trr
117
ns
ta
70
tb
47
QRR
1.2
trr
166
ns
ta
98
tb
68
QRR
1.9
13

((IF = 20 Adc, VR = 360 Vdc,
dIF/dt = 200 A/s)
((IF = 20 Adc, VR = 360 Vdc,
dIF/dt = 200 A/s, TJ = 125C)

LE

nH

60
60
12.5 V
15 V
40
10 V
20
15 V
40
10 V
20
VCE = 100 V
5 s PULSE WIDTH
30
TJ = 125C
20
25C
10
12.5 V
17.5 V
40
VGE = 20 V
TJ = 125C
VGE = 20 V
17.5 V
10
11
TJ = 25C
3.2
VGE = 15 V
80 s PULSE WIDTH
IC = 20 A
2.8
15 A
2.4
2
50
10 A
50
100
150

437
4000
VCE = 0 V
MGW20N60D
TJ = 25C
C, CAPACITANCE (pF)
3200
Cies
2400
1600
Coes
800
Cres
5
15
10
20
QT
12
Q1
8
TJ = 25C
IC = 20 A
25
Q2
20
40
60
80

Total Charge
VCC = 360 V
VGE = 15 V
TJ = 125C
3.2
4
IC = 20 A
2.4
15 A
10 A
1.6
0.8
10
20
30
40
3
2.5
IC = 20 A
2
15 A
1.5
10 A
1
0
25
50
75
100
125

Gate Resistance

150
1.6
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125C
2.5
2
1.5
1
0.5
438
VCC = 360 V
VGE = 15 V
RG = 20
3.5
0.5
50
TURNOFF ENERGY LOSSES (mJ)
16
10
15
20
VCC = 360 V
VGE = 15 V
TJ = 125C
IC = 20 A
1.2
15 A
0.8
10 A
0.4
10
20
30
40

Figure 10. TurnOff Losses versus

Gate Resistance
50
MGW20N60D
1.2
1.5
1
IC = 20 A
15 A
10 A
0.5
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
VCC = 360 V
VGE = 15 V
RG = 20
25
50
75
100
125
10
15


10
TJ = 125C
TJ = 25C
1
0.4
100
0.1
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125C
0.8
150
0.4
0.8
1.2
1.6
100
10
0.1
VGE = 15 V
RGE = 20
TJ = 125C
1
10
100
Figure 13. Typical Diode Forward Drop versus

Figure 14. Reverse Biased Safe

Operating Area
20
1000
439
MOTOROLA
Designer's
Data Sheet
MGW20N120

withstand time. Fast switching characteristics result in efficient
operation at high frequencies.
IGBT IN TO247
20 A @ 90C
28 A @ 25C
1200 VOLTS
SHORT CIRCUIT RATED

C
E
TO247AE

Rating
Symbol
Value
Unit
VCES
1200
Vdc
VCGR
1200
Vdc
VGE
20
Vdc

IC25
IC90
ICM
28
20
56
Adc
PD
174
1.39
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJA
0.7
35
C/W
TL
260

Derate above 25C
Junction to Ambient
Apk

440
MGW20N120
Characteristic
Symbol
Min
Typ
Max
Unit
1200
870
mV/C
25
Vdc
100
2500
250
3.00
2.36
2.90
3.54
4.99
4.0
6.0
10
8.0
mV/C
gfe
12
Mhos
pF
OFF CHARACTERISTICS
BVCES
BVECS

ICES
IGES
Vdc
Adc
nAdc
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125C)
VCE(on)

VGE(th)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
Cies
1860
Coes
122
Cres
29
td(on)
88
tr
103
td(off)
190
tf
284
Eoff
1.65
3.75
mJ
td(on)
83
ns
tr
107
td(off)
216
tf
494
Eoff
3.19
mJ
QT
62
nC
Q1
21
Q2
25
13

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VCC = 720 Vdc, IC = 20 Adc,

VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 , TJ = 25
25C)
C)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VCC = 720 Vdc, IC = 20 Adc,

Vd L = 300 mH
VGE = 15 Vdc,
RG = 20 , TJ = 125C)
125 C)

Gate Charge
(VCC = 720 Vdc,
Vd IC = 20 Adc,
Ad
VGE = 15 Vdc)
ns

LE
nH
441
MGW20N120
60
VGE = 20 V
TJ = 25C
50
17.5 V
40
12.5 V
30
20
10 V
10
0
50
40
12.5 V
30
10 V
20
10
0
TJ = 125C
40
20
25C
10
11
12
13
14
15
VCE = 10 V
250 s PULSE WIDTH
VGE = 15 V
250 s PULSE WIDTH
IC = 20 A
3
15 A
10 A
1
50
C, CAPACITANCE (pF)
Cies
1000
Coes
10
Cres
10
15
20
100
150

TJ = 25C
100
50
VCE = 0 V
10000
60
15 V
17.5 V
VGE = 20 V
TJ = 125C
15 V
60
25
16
QT
14
12
10
Q1
Q2
6
TJ = 25C
IC = 20 A
4
2
0
10 15 20
25 30 35 40
45 50 55 60 65 70

Total Charge
442
IC = 25 A
15 A
3
10 A
2
1
0
10
20
15
25
30
40
35
15 A
2
10 A
1
50
25
75
100
125

Case Temperature
VCC = 720 V
VGE = 15 V
RG = 20
TJ = 125C
10

Gate Resistance
IC = 20 A
VCC = 720 V
VGE = 15 V
RG = 20
50
45
12
14
16
18
20
150
40
30
TJ = 125C
20
TJ = 25C
10

VCC = 720 V
VGE = 15 V
TJ = 25C

F
MGW20N120

100
10
0.1
VGE = 15 V
RGE = 20
TJ = 125C
1
10
100
1000

Safe Operating Area
443
MGW20N120
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
444
MOTOROLA
Designer's
Data Sheet
MGW30N60

IGBT IN TO247
30 A @ 90C
50 A @ 25C
600 VOLTS
SHORT CIRCUIT RATED

Robust RBSOA
E
TO247AE

Symbol
Value
Unit
Rating
VCES
600
Vdc
VCGR
600
Vdc
VGE
20
Vdc

IC25
IC90
ICM
50
30
100
Adc
PD
202
1.61
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJA
0.62
45
C/W
TL
260

Derate above 25C
Junction to Ambient
Apk

445
MGW30N60
Characteristic
Symbol
Min
Typ
Max
Unit
600
870
mV/C
25
Vdc
100
2500
250
2.20
2.10
2.60
2.90
3.45
4.0
6.0
10
8.0
mV/C
gfe
15
Mhos
pF
OFF CHARACTERISTICS
BVCES
BVECS

ICES
IGES
Vdc
Adc
nAdc
(VGE = 15 Vdc, IC = 15 Adc, TJ = 125C)
VCE(on)

VGE(th)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
Cies
4280
Coes
275
Cres
19
td(on)
76
tr
80
td(off)
348
tf
188
Eoff
0.98
1.28
mJ
td(on)
73
ns
tr
95
td(off)
394
tf
418
Eoff
1.90
mJ
QT
150
nC
Q1
30
Q2
45
13

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VCC = 360 Vdc, IC = 30 Adc,

VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 , TJ = 25
25C)
C)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VCC = 360 Vdc, IC = 30 Adc,

Vd L = 300 mH
VGE = 15 Vdc,
RG = 20 , TJ = 125C)
125 C)

Gate Charge
(VCC = 360 Vdc,
Vd IC = 30 Adc,
Ad
VGE = 15 Vdc)
ns

LE
nH
446
MGW30N60
60
60
TJ = 125C
12.5 V
17.5 V
10 V
15 V
40
20
60
VGE = 20 V
25C
10
11
VGE = 15 V
80 s PULSE WIDTH
IC = 30 A
2.6
22.5 A
15 A
2.2
1.8
50
50
100
150

TJ = 25C
6400
VCE = 0 V
5600
C, CAPACITANCE (pF)
7200
Cies
4800
4000
3200
2400
1600
Coes
Cres
0
20
TJ = 125C
800
20
VCE = 100 V
5 s PULSE WIDTH
10 V
15 V
40
40
12.5 V
VGE = 20 V
17.5 V
TJ = 25C
10
15
20
25
16
QT
12
Q1
Q2
TJ = 25C
IC = 30 A
20
40
60
80
100
120
140

Total Charge
447
MGW30N60
3
VCC = 360 V
VGE = 15 V
TJ = 125C
2.5
IC = 30 A
2
1.5
20 A
1
10 A
0.5
0
10
20
30
40
20 A
0.5
10 A
25
50
75
100
125


Gate Resistance
0.8
0.4
448
IC = 30 A
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125C
1.5
1.2
50
1.6
VCC = 360 V
VGE = 15 V
RG = 20
2.5
10
15
20
25
30
150
100
10
1
VGE = 15 V
RGE = 20
TJ = 125C
0.1
10
100


Operating Area
1000
MOTOROLA
Data Sheet
Designer's
MGY20N120D

20 A @ 90C
28 A @ 25C
1200 VOLTS
SHORT CIRCUIT RATED

Industry Standard High Power TO264 Package (TO3PBL)

Robust RBSOA
G
G
E
CASE 340G02, Style 5

TO264

Rating
Symbol
Value
Unit
VCES
1200
Vdc
VCGR
1200
Vdc
VGE
20
Vdc

IC25
IC90
ICM
28
20
56
Adc
PD
174
1.39
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJC
RJA
0.7
1.1
35
C/W
TL
260

Derate above 25C
Junction to Ambient
Apk

449
MGY20N120D
Characteristic
Symbol
Min
Typ
Max
Unit
1200
870
100
2500
250
3.00
2.36
2.90
3.54
4.99
4.0
6.0
10
8.0
mV/C
gfe
12
Mhos
Cies
1876
pF
Coes
208
Cres
31
td(on)
88
OFF CHARACTERISTICS
BVCES

ICES
IGES
Vdc
mV/C
Adc
nAdc
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125C)
VCE(on)

VGE(th)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
(VCC = 720 Vdc

Vdc, IC = 20 Adc
Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 , TJ = 25C)
tail
tr
103
td(off)
190
tf
284
Eoff
1.65
3.75
Eon
2.42
7.68
Ets
4.07
11.43
td(on)
83
tr
107
td(off)
216
tf
494
Eoff
3.19
Eon
4.26
Ets
7.45
QT
63
Q1
20
Q2
27
2.92
1.73
3.67
3.59
4.57
TurnOff Delay Time

Fall Time
TurnOn Delay Time

Rise Time
TurnOff Delay Time
(VCC = 720 Vdc

Vdc, IC = 20 Adc
Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 , TJ = 125C)
tail
Fall Time
Gate Charge
Vd IC = 20 Adc,
Ad
(VCC = 720 Vdc,
VGE = 15 Vdc)
ns
mJ
ns
mJ
nC
(IEC = 10 Adc)
(IEC = 10 Adc, TJ = 125C)
(IEC = 20 Adc)
450
VFEC
Vdc
(continued)
MGY20N120D
Characteristic
Symbol
Min
Typ
Max
Unit
trr
114
ns
ta
74
tb
40
QRR
0.68
trr
224
ns
ta
149
tb
75
QRR
2.40
13

((IF = 20 Adc, VR = 720 Vdc,
dIF/dt = 150 A/s)
((IF = 20 Adc, VR = 720 Vdc,
dIF/dt = 150 A/s, TJ = 125C)

LE

nH
60
VGE = 20 V
TJ = 25C
50
17.5 V
40
12.5 V
30
20
10 V
10
0
50
40
12.5 V
30
10 V
20
10
0
TJ = 125C
40
20
25C
10
11
12
13
14
15
VCE = 10 V
250 s PULSE WIDTH
60
15 V
17.5 V
VGE = 20 V
TJ = 125C
15 V
60
4
VGE = 15 V
250 s PULSE WIDTH
IC = 20 A
3
15 A
10 A
1
50
50
100
150

451
MGY20N120D
10000
10000
VGE = 0 V
TJ = 25C
TJ = 25C
Cies
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
Cies
1000
Coes
100
Cres
1000
Coes
100
Cres
15
10
20
10
25
50
150
100
200

Variation
16
QT
14
12
10
Q1
Q2
6
TJ = 25C
IC = 20 A
4
2
0
10 15 20
25 30 35 40
VCC = 720 V
VGE = 15 V
TJ = 25C
IC = 25 A
15 A
3
10 A
2
1
0
45 50 55 60 65 70
10
15
20
25
30
35
45
40
Figure 6. GatetoEmitter and CollectortoEmitter

Voltage versus Total Charge

Gate Resistance
VCC = 720 V
VGE = 15 V
RG = 20
10
IC = 20 A
15 A
2
10 A
1
25
452
50
75
100
125
150
50
5
VCC = 720 V
VGE = 15 V
RG = 20
TJ = 125C
10
12
14
16
18

Case Temperature

20
40

F
MGY20N120D
30
TJ = 125C
20
TJ = 25C
10
100
10
0.1
VGE = 15 V
RGE = 20
TJ = 125C
1
10
100
1000


Safe Operating Area
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
453
MOTOROLA
Designer's
Data Sheet
MGY25N120

withstand time. Fast switching characteristics result in efficient
operation at high frequencies.
IGBT IN TO264
25 A @ 90C
38 A @ 25C
1200 VOLTS
SHORT CIRCUIT RATED

G
G
E
TO264

Rating
Symbol
Value
Unit
VCES
1200
Vdc
VCGR
1200
Vdc
VGE
20
Vdc

IC25
IC90
ICM
38
25
76
Adc
PD
212
1.69
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJA
0.6
35
C/W
260

Derate above 25C
Junction to Ambient
TL
Apk

REV 1
454
MGY25N120
Characteristic
Symbol
Min
Typ
Max
Unit
1200
960
mV/C
25
Vdc
100
2500
250
2.37
2.15
2.98
3.24
4.19
4.0
6.0
10
8.0
mV/C
gfe
12
Mhos
pF
OFF CHARACTERISTICS
BVCES
BVECS

ICES
IGES
Vdc
Adc
nAdc
(VGE = 15 Vdc, IC = 12.5 Adc)
(VGE = 15 Vdc, IC = 12.5 Adc, TJ = 125C)
VCE(on)

VGE(th)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
Cies
2795
Coes
181
Cres
45
td(on)
91
tr
124
td(off)
196
tf
310
Eoff
2.44
4.69
mJ
td(on)
88
ns
tr
126
td(off)
236
tf
640
Eoff
5.40
mJ
QT
97
nC
Q1
31
Q2
40
13

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VCC = 720 Vdc, IC = 25 Adc,

VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 , TJ = 25
25C)
C)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VCC = 720 Vdc, IC = 25 Adc,

Vd L = 300 mH
VGE = 15 Vdc,
RG = 20 , TJ = 125C)
125 C)

Gate Charge
(VCC = 720 Vdc,
Vd IC = 25 Adc,
Ad
VGE = 15 Vdc)
ns

LE
nH
455
MGY25N120
75
75
VGE = 20 V
15 V
60
45
12.5 V
30
10 V
15
15 V
45
12.5 V
30
10 V
15
TJ = 125C
50
40
30
20
25C
10
8
10
12
14
16
VCE = 10 V
250 s PULSE WIDTH
IC = 20 A
3
15 A
10 A
1
50
C, CAPACITANCE (pF)
1000
Coes
Cres
10
15
20
25
456
50
100
150

Cies
10
TJ = 25C
100
VGE = 15 V
250 s PULSE WIDTH
VCE = 0 V
10000
70
17.5 V
60
60
VGE = 20 V
TJ = 125C
17.5 V
TJ = 25C
16
QT
14
12
10
Q1
Q2
8
6
TJ = 25C
IC = 25 A
4
2
0
10 15 20
25 30 35 40
45 50 55 60 65 70

Total Charge
6
IC = 25 A
5.5
VCC = 720 V
VGE = 15 V
TJ = 125C
IC = 25 A
5
4.5
4
15 A
3.5
3
10 A
2.5
2
10
20
30
40
IC = 25 A
4
15 A
3
2
10 A
1
50
25
75
100
125
150

Case Temperature
3
2
1
0

Gate Resistance
VCC = 720 V
VGE = 15 V
RG = 20
TJ = 125C
VCC = 720 V
VGE = 15 V
RG = 20
7
6
50
10
15
20
25

F
MGY25N120
50
40
TJ = 125C
30
TJ = 25C
20
10
0


100
10
0.1
VGE = 15 V
RGE = 20
TJ = 125C
1
10
100
1000

Safe Operating Area
457
MGY25N120
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
458
MOTOROLA
Data Sheet
Designer's
MGY25N120D

25 A @ 90C
38 A @ 25C
1200 VOLTS
SHORT CIRCUIT RATED


Robust RBSOA
G
G

TO264

Rating
Symbol
Value
Unit
VCES
1200
Vdc
VCGR
1200
Vdc
VGE
20
Vdc

IC25
IC90
ICM
38
25
76
Adc
PD
212
1.69
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJC
RJA
0.6
0.9
35
C/W
TL
260

Derate above 25C
Junction to Ambient
Apk

REV 1
459
MGY25N120D
Characteristic
Symbol
Min
Typ
Max
Unit
1200
960
100
2500
250
2.37
2.15
2.98
3.24
4.19
4.0
6.0
10
8.0
mV/C
gfe
12
Mhos
Cies
1859
pF
Coes
198
Cres
30
td(on)
91
OFF CHARACTERISTICS
BVCES

ICES
IGES
Vdc
mV/C
Adc
nAdc
(VGE = 15 Vdc, IC = 12.5 Adc)
(VGE = 15 Vdc, IC = 12.5 Adc, TJ = 125C)
VCE(on)

VGE(th)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
(VCC = 720 Vdc

Vdc, IC = 25 Adc
Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 , TJ = 25C)
tail
tr
124
td(off)
196
tf
310
Eoff
2.44
4.69
Eon
3.14
9.69
Ets
5.58
14.38
td(on)
88
tr
126
td(off)
236
tf
640
Eoff
5.40
Eon
5.03
Ets
10.43
QT
62
Q1
22
Q2
25
2.89
1.75
3.65
3.50
4.45
TurnOff Delay Time

Fall Time
TurnOn Delay Time

Rise Time
TurnOff Delay Time
(VCC = 720 Vdc

Vdc, IC = 25 Adc
Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 , TJ = 125C)
tail
Fall Time
Gate Charge
Vd IC = 25 Adc,
Ad
(VCC = 720 Vdc,
VGE = 15 Vdc)
ns
mJ
ns
mJ
nC
(IEC = 12.5 Adc)
(IEC = 12.5 Adc, TJ = 125C)
(IEC = 25 Adc)
460
VFEC
Vdc
(continued)
MGY25N120D
Characteristic
Symbol
Min
Typ
Max
Unit
trr
114
ns
ta
71
tb
43
QRR
0.65
trr
226
ns
ta
165
tb
61
QRR
1.90
13

((IF = 25 Adc, VR = 720 Vdc,
dIF/dt = 150 A/s)
((IF = 25 Adc, VR = 720 Vdc,
dIF/dt = 150 A/s, TJ = 125C)

LE

nH

75
75
VGE = 20 V
15 V
60
45
12.5 V
30
10 V
15
15 V
45
12.5 V
30
10 V
15
TJ = 125C
50
40
30
20
25C
10
8
10
12
14
16
VCE = 10 V
250 s PULSE WIDTH
70
17.5 V
60
60
VGE = 20 V
TJ = 125C
17.5 V
TJ = 25C
4
VGE = 15 V
250 s PULSE WIDTH
IC = 20 A
3
15 A
10 A
1
50
50
100
150

461
MGY25N120D
10000
10000
VGE = 0 V
TJ = 25C
TJ = 25C
Cies
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
Cies
1000
Coes
100
Cres
1000
Coes
100
Cres
15
10
20
10
25
50
150
100
200

Variation
16
QT
14
12
10
Q1
Q2
8
6
TJ = 25C
IC = 25 A
4
2
0
10 15 20
25 30 35 40
6
IC = 25 A
5.5
VCC = 720 V
VGE = 15 V
TJ = 125C
IC = 25 A
5
4.5
4
15 A
3.5
3
10 A
2.5
2
45 50 55 60 65 70
10
20
30
40
50
Figure 6. GatetoEmitter and CollectortoEmitter


Gate Resistance
VCC = 720 V
VGE = 15 V
RG = 20
6
5
10
IC = 25 A
4
15 A
3
2
10 A
1
0
5
4
3
2
1
0
25
462
50
75
100
125
150
VCC = 720 V
VGE = 15 V
RG = 20
TJ = 125C
10
15
20

Case Temperature

25
50

F
MGY25N120D
40
TJ = 125C
30
TJ = 25C
20
10
0
100
10
0.1
VGE = 15 V
RGE = 20
TJ = 125C
1
10
100
1000


Safe Operating Area
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
463
MOTOROLA
Data Sheet
Designer's
MGY30N60D

30 A @ 90C
50 A @ 25C
600 VOLTS
SHORT CIRCUIT RATED


Robust RBSOA
G
G
E

TO264

Rating
Symbol
Value
Unit
VCES
600
Vdc
VCGR
600
Vdc
VGE
20
Vdc

IC25
IC90
ICM
50
30
100
Adc
PD
202
1.61
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJC
RJA
0.62
1.41
35
C/W
TL
260

Derate above 25C
Junction to Ambient
Apk

464
MGY30N60D
Characteristic
Symbol
Min
Typ
Max
Unit
600
870
100
2500
250
2.20
2.10
2.60
2.90
3.45
4.0
6.0
10
8.0
mV/C
gfe
15
Mhos
Cies
4280
pF
Coes
225
Cres
19
td(on)
76
OFF CHARACTERISTICS
BVCES

ICES
IGES
Vdc
mV/C
Adc
nAdc
(VGE = 15 Vdc, IC = 15 Adc, TJ = 125C)
VCE(on)

VGE(th)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
tr
80
td(off)
348
tf
188
Eoff
0.98
1.28
Eon
2.00
Ets
2.98
TurnOn Delay Time
td(on)
73
TurnOff Delay Time

Fall Time
(VCC = 360 Vdc, IC = 30 Adc,

VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 , TJ = 25
25C)
C)
Rise Time
tr
95
td(off)
394
tf
418
Eoff
1.90
Eon
3.10
Ets
5.00
QT
150
Q1
30
Q2
45
1.30
1.10
1.45
1.80
2.05
TurnOff Delay Time

Fall Time
(VCC = 360 Vdc, IC = 30 Adc,

VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 , TJ = 125C)
125 C)
Gate Charge
(VCC = 360 Vdc,
Vd IC = 30 Adc,
Ad
VGE = 15 Vdc)
ns
mJ
ns
mJ
nC
(IEC = 15 Adc)
(IEC = 15 Adc, TJ = 125C)
(IEC = 30 Adc)
VFEC
Vdc
(continued)
465
MGY30N60D
Characteristic
Symbol
Min
Typ
Max
Unit
trr
153
ns
ta
82
tb
71
QRR
2.3
trr
208
ns
ta
117
tb
91
QRR
3.8
13

((IF = 30 Adc, VR = 360 Vdc,
dIF/dt = 200 A/s)
((IF = 30 Adc, VR = 360 Vdc,
dIF/dt = 200 A/s, TJ = 125C)

LE

nH

60
60
TJ = 125C
12.5 V
17.5 V
10 V
15 V
40
20
60
VGE = 20 V
20
TJ = 125C
25C
20
466
40
VCE = 100 V
5 s PULSE WIDTH
10 V
15 V
40
12.5 V
VGE = 20 V
17.5 V
10
11
TJ = 25C
VGE = 15 V
80 s PULSE WIDTH
IC = 30 A
2.6
22.5 A
15 A
2.2
1.8
50
50
100

150
MGY30N60D
C, CAPACITANCE (pF)
VCE = 0 V
8000
TJ = 25C
6000
Cies
4000
2000
Coes
Cres
10
15
20
25
QT
15
10
Q1
Q2
TJ = 25C
IC = 30 A
60
30
90
120
150

Total Charge
6.4
VCC = 360 V
VGE = 15 V
TJ = 125C
5.6
IC = 30 A
4.8
4
20 A
3.2
2.4
10 A
1.6
0.8
0
10
20
30
40
VCC = 360 V
VGE = 15 V
RG = 20
5.5
4.5
IC = 30 A
3.5
20 A
2.5
10 A
1.5
50
25
75
125
100
150

Gate Resistance

3
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125C
6.5
0.5
50
20
10
15
20
25
30
VCC = 360 V
VGE = 15 V
TJ = 125C
IC = 30 A
2
20 A
1
10 A
10
20
30
40


Gate Resistance
50
467
MGY30N60D
VCC = 360 V
VGE = 15 V
RG = 20
2
IC = 30 A
1
20 A
10 A
25
50
75
100
125
10
15
20
25


TJ = 125C
TJ = 25C
1
468
0.5
10
150
100
0.1
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125C
1.5
0.4
0.8
1.2
1.6
30
100
10
1
VGE = 15 V
RGE = 20
TJ = 125C
0.1
10
100


Operating Area
1000
MOTOROLA
Designer's
Data Sheet
MGY40N60

IGBT IN TO264
40 A @ 90C
66 A @ 25C
600 VOLTS
SHORT CIRCUIT RATED

Robust RBSOA
C
G
G
E
TO264

Rating
Symbol
Value
Unit
VCES
600
Vdc
VCGR
600
Vdc
VGE
20
Vdc

IC25
IC90
ICM
66
40
132
Adc
PD
260
2.08
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJA
0.48
35
C/W
TL
260

Derate above 25C
Apk

469
MGY40N60
Characteristic
Symbol
Min
Typ
Max
Unit
600
870
mV/C
25
Vdc
100
2500
250
2.20
2.10
2.60
2.80
3.25
4.0
6.0
10
8.0
mV/C
gfe
12
Mhos
pF
OFF CHARACTERISTICS
BVCES
BVECS

ICES
IGES
Vdc
Adc
nAdc
(VGE = 15 Vdc, IC = 20 Adc, TJ = 125C)
VCE(on)

VGE(th)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
Cies
6810
Coes
464
Cres
15
td(on)
126
tr
95
td(off)
530
tf
180
Eoff
1.50
2.10
mJ
td(on)
113
ns
tr
104
td(off)
588
tf
346
Eoff
2.70
mJ
QT
248
nC
Q1
49
Q2
81
13

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VCC = 360 Vdc, IC = 40 Adc,

VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 , TJ = 25
25C)
C)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VCC = 360 Vdc, IC = 40 Adc,

Vd L = 300 mH
VGE = 15 Vdc,
RG = 20 , TJ = 125C)
125 C)

Gate Charge
(VCC = 360 Vdc,
Vd IC = 40 Adc,
Ad
VGE = 15 Vdc)
ns

LE
nH
470
MGY40N60
80
80
VGE = 20 V
17.5 V
10 V
15 V
60
TJ = 125C
12.5 V
40
20
10 V
40
20
TJ = 125C
40
25C
20
10
VGE = 15 V
80 s PULSE WIDTH
IC = 40 A
2.6
30 A
20 A
2.2
1.8
50
50
100
150

TJ = 25C
VCE = 0 V
8000
12000
C, CAPACITANCE (pF)
15 V
60
Cies
4000
Coes
Cres
0
17.5 V
VCE = 100 V
5 s PULSE WIDTH
12.5 V
80
VGE = 20 V
60
TJ = 25C
10
15
20
25
20
QT
15
Q1
10
Q2
TJ = 25C
IC = 40 A
50
100
150
250
200

Total Charge
471
MGY40N60
4
VCC = 360 V
VGE = 15 V
TJ = 125C
IC = 40 A
30 A
20 A
1
10
30
20
40
472
25
50
75
100
125

20 A

Gate Resistance
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125C
30 A
IC = 40 A
50
VCC = 360 V
VGE = 15 V
RG = 20
10
15
20
25
30
35
40
150
100
10
1
VGE = 15 V
RGE = 20
TJ = 125C
0.1
10
100


Operating Area
1000
MOTOROLA
Data Sheet
Designer's
MGY40N60D

40 A @ 90C
66 A @ 25C
600 VOLTS
SHORT CIRCUIT RATED


Robust RBSOA
G
G

TO264

Rating
Symbol
Value
Unit
VCES
600
Vdc
VCGR
600
Vdc
VGE
20
Vdc

IC25
IC90
ICM
66
40
132
Adc
PD
260
2.08
Watts
W/C
TJ, Tstg
55 to 150
tsc
10
ms
RJC
RJC
RJA
0.48
1.13
35
C/W
TL
260

Derate above 25C
Thermal Resistance Junction to Case Diode
Apk

473
MGY40N60D
Characteristic
Symbol
Min
Typ
Max
Unit
600
870
100
2500
250
2.20
2.10
2.60
2.80
3.25
4.0
6.0
10
8.0
mV/C
gfe
12
Mhos
Cies
6810
pF
Coes
464
Cres
15
td(on)
126
OFF CHARACTERISTICS
BVCES

ICES
IGES
Vdc
mV/C
Adc
nAdc
(VGE = 15 Vdc, IC = 20 Adc, TJ = 125C)
VCE(on)

VGE(th)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vd VGE = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
tr
95
td(off)
530
tf
180
Eoff
1.50
2.10
Eon
2.30
Ets
3.80
TurnOn Delay Time
td(on)
113
TurnOff Delay Time

Fall Time
(VCC = 360 Vdc, IC = 40 Adc,

VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 , TJ = 25
25C)
C)
Rise Time
tr
104
td(off)
588
tf
346
Eoff
2.70
Eon
3.80
Ets
6.50
QT
248
Q1
49
Q2
81
1.19
1.04
1.36
1.70
2.00
TurnOff Delay Time

Fall Time
(VCC = 360 Vdc, IC = 40 Adc,

VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 , TJ = 125C)
125 C)
Gate Charge
(VCC = 360 Vdc,
Vd IC = 40 Adc,
Ad
VGE = 15 Vdc)
ns
mJ
ns
mJ
nC
(IEC = 20 Adc)
(IEC = 20 Adc, TJ = 125C)
(IEC = 40 Adc)
474
VFEC
Vdc
(continued)
MGY40N60D
Characteristic
Symbol
Min
Typ
Max
Unit
trr
138
ns
ta
78
tb
60
QRR
2.1
trr
213
ns
ta
122
tb
91
QRR
4.9
13

((IF = 40 Adc, VR = 360 Vdc,
dIF/dt = 200 A/s)
((IF = 40 Adc, VR = 360 Vdc,
dIF/dt = 200 A/s, TJ = 125C)

LE

nH

80
80
17.5 V
12.5 V
10 V
15 V
60
TJ = 125C
VGE = 20 V
40
20
15 V
10 V
40
20
VCE = 100 V
5 s PULSE WIDTH
60
TJ = 125C
40
25C
20
17.5 V
80
12.5 V
VGE = 20 V
60
10
TJ = 25C
VGE = 15 V
80 s PULSE WIDTH
IC = 40 A
2.6
30 A
20 A
2.2
1.8
50
50
150
100

475
MGY40N60D
TJ = 25C
C, CAPACITANCE (pF)
VCE = 0 V
8000
12000
Cies
4000
Coes
Cres
5
15
10
20
25
QT
15
Q1
10
Q2
TJ = 25C
IC = 40 A
50
100
250
200
150

Total Charge
VCC = 360 V
VGE = 15 V
TJ = 125C
7.5
8.5
IC = 40 A
6.5
5.5
30 A
4.5
20 A
3.5
2.5
10
20
30
40
30 A
3
20 A
25
50
75
100
125

Gate Resistance

150
4
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125C
6
5
4
3
2
1
476
IC = 40 A
VCC = 360 V
VGE = 15 V
RG = 20
50
20
10
15
20
25
30
35
40
VCC = 360 V
VGE = 15 V
TJ = 125C
IC = 40 A
30 A
2
20 A
1
10
20
30
40


Gate Resistance
50
MGY40N60D
3
IC = 40 A
30 A
1
VCC = 360 V
VGE = 15 V
RG = 20
20 A
50
25
75
100
125
10
15
20
25
30
35


10
TJ = 125C
TJ = 25C
1
100
0.1
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125C
150
0.4
0.8
1.2
100
10
0.1
VGE = 15 V
RGE = 20
TJ = 125C
1
10
100


Operating Area
40
1000
477
MOTOROLA
Data Sheet
SMARTDISCRETES
Internally Clamped, Current Limited
NChannel Logic Level Power MOSFET
Designer's
The MLD1N06CL is designed for applications that require a rugged power switching
device with short circuit protection that can be directly interfaced to a microcontrol unit
(MCU). Ideal applications include automotive fuel injector driver, incandescent lamp
driver or other applications where a high inrush current or a shorted load condition could
occur.
This logic level power MOSFET features current limiting for short circuit protection,
integrated GateSource clamping for ESD protection and integral GateDrain clamping
for overvoltage protection and Sensefet technology for low onresistance. No additional
gate series resistance is required when interfacing to the output of a MCU, but a 40 k
gate pulldown resistor is recommended to avoid a floating gate condition.
The internal GateSource and GateDrain clamps allow the device to be applied
without use of external transient suppression components. The GateSource clamp
protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The
GateDrain clamp protects the MOSFET drain from the avalanche stress that occurs
with inductive loads. Their unique design provides voltage clamping that is essentially
independent of operating temperature.
The MLD1N06CL is fabricated using Motorolas SMARTDISCRETES technology which
combines the advantages of a power MOSFET output device with the onchip protective
circuitry that can be obtained from a standard MOSFET process. This approach offers an
economical means of providing protection to power MOSFETs from harsh automotive and
industrial environments. SMARTDISCRETES devices are specified over a wide temperature range from 50C to 150C.
MLD1N06CL
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.75 OHMS
R1
G
R2
S

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
Clamped
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
Clamped
Vdc
GatetoSource Voltage Continuous
VGS
10
Vdc
Drain Current Continuous

Single Pulse
ID
IDM
Selflimited
1.8
Adc
Apk
Total Power Dissipation

Electrostatic Discharge Voltage (Human Model)
PD
40
Watts
TJ, Tstg
50 to 150
ESD
2.0
kV
RJC
RJA
RJA
3.12
100
71.4
C/W
TL
260
Thermal Resistance Junction to Case
Junction to Ambient
Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes,
1/8 from case for 5 sec.

DPAK Surface Mount
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS

Single Pulse DraintoSource Avalanche Energy
Starting TJ = 25C
EAS
80
mJ
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
478
MLD1N06CL
Characteristic
Symbol
Min
Typ
Max
Unit
59
59
62
62
65
65
0.6
6.0
5.0
20
0.5
1.0
5.0
20
1.0
0.6
1.5
2.0
1.6
0.63
0.59
1.1
1.0
0.75
0.75
1.9
1.8
1.1
1.5
2.0
1.1
2.3
1.3
2.75
1.8
gFS
1.0
1.4
mhos
td(on)
1.2
2.0
ns
tr
4.0
6.0
td(off)
4.0
6.0
tf
3.0
5.0
4.5
7.5
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Internally Clamped)
(ID = 20 mAdc, VGS = 0 Vdc)
(ID = 20 mAdc, VGS = 0 Vdc, TJ = 150C)
V(BR)DSS
Zero Gate Voltage Drain Current

(VDS = 45 Vdc, VGS = 0 Vdc)
(VDS = 45 Vdc, VGS = 0 Vdc, TJ = 150C)
IDSS
GateSource Leakage Current

(VG = 5.0 Vdc, VDS = 0 Vdc)
(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150C)
IGSS
Vdc
Adc
Adc
ON CHARACTERISTICS(1)
(ID = 250 Adc, VDS = VGS)
(ID = 250 Adc, VDS = VGS, TJ = 150C)
VGS(th)
Static DraintoSource OnResistance

(ID = 1.0 Adc, VGS = 4.0 Vdc)
(ID = 1.0 Adc, VGS = 5.0 Vdc)
(ID = 1.0 Adc, VGS = 4.0 Vdc, TJ = 150C)
(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150C)
RDS(on)
Static SourcetoDrain Diode Voltage (IS = 1.0 Adc, VGS = 0 Vdc)
Vdc
Ohms
VSD
Static Drain Current Limit

(VGS = 5.0 Vdc, VDS = 10 Vdc)
(VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150C)
Vdc
ID(lim)
Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc)
Adc
RESISTIVE SWITCHING CHARACTERISTICS(2)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 25 Vdc, ID = 1.0 Adc,

VGS(on) = 5.0 Vdc, RGS = 50 Ohms)
Fall Time
Internal Drain Inductance
(Measured from drain lead 0.25 from package to center of die)
LD
Internal Source Inductance

(Measured from the source lead 0.25 from package to source bond pad)
LS
nH
nH

(2) Switching characteristics are independent of operating junction temperature.
TJ = 25C
10 V
6V
8V
4V
VGS = 3 V
VDS 7.5 V
4
ID , DRAIN CURRENT (AMPS)
50C
3
25C
2
TJ = 150C
0
0
2
4
6
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics
2
4
6
Figure 2. Transfer Function
479
MLD1N06CL
480
ID(lim) , DRAIN CURRENT (AMPS)
4
VGS = 5 V
VDS = 7.5 V
3
0
50
0
50
100
150
Figure 3. ID(lim) Variation

With Temperature
R DS(on), ONRESISTANCE (OHMS)
ID = 1 A
2
25C
150C
TJ = 50C
2
4
6
8
10
Figure 4. RDS(on) Variation With

GateToSource Voltage
1.25
ID = 1 A
RDS(on), ONRESISTANCE (OHMS)
THE SMARTDISCRETES CONCEPT

From a standard power MOSFET process, several active
and passive elements can be obtained that provide onchip
protection to the basic power device. Such elements require
only a small increase in silicon area and/or the addition of one
masking layer to the process. The resulting device exhibits
significant improvements in ruggedness and reliability as well
as system cost reduction. The SMARTDISCRETES device
functions can now provide an economical alternative to smart
power ICs for power applications requiring low onresistance,
high voltage and high current.
These devices are designed for applications that require a
rugged power switching device with short circuit protection
that can be directly interfaced to a microcontroller unit (MCU).
Ideal applications include automotive fuel injector driver,
incandescent lamp driver or other applications where a high
inrush current or a shorted load condition could occur.
OPERATION IN THE CURRENT LIMIT MODE
The amount of time that an unprotected device can withstand the current stress resulting from a shorted load before
its maximum junction temperature is exceeded is dependent
upon a number of factors that include the amount
of heatsinking that is provided, the size or rating of the device,
its initial junction temperature, and the supply voltage. Without
some form of current limiting, a shorted load can raise a devices junction temperature beyond the maximum rated operating temperature in only a few milliseconds.
Even with no heatsink, the MLD1N06CL can withstand a
shorted load powered by an automotive battery (10 to 14
Volts) for almost a second if its initial operating temperature is
under 100C. For longer periods of operation in the current
limited mode, device heatsinking can extend operation from
several seconds to indefinitely depending on the amount of
heatsinking provided.
SHORT CIRCUIT PROTECTION AND THE EFFECT OF
TEMPERATURE
The onchip circuitry of the MLD1N06CL offers an integrated
means of protecting the MOSFET component from high inrush
current or a shorted load. As shown in the schematic diagram,
the current limiting feature is provided by an NPN transistor and
integral resistors R1 and R2. R2 senses the current through the
MOSFET and forward biases the NPN transistors base as the
current increases. As the NPN turns on, it begins to pull gate
drive current through R1, dropping the gate drive voltage across
it, and thus lowering the voltage across the gatetosource of
the power MOSFET and limiting the current. The current limit is
temperature dependent as shown in Figure 3, and decreases
from about 2.3 Amps at 25C to about 1.3 Amps at 150C.
Since the MLD1N06CL continues to conduct current and dissipate power during a shorted load condition, it is important to
provide sufficient heatsinking to limit the device junction temperature to a maximum of 150C.
The metal current sense resistor R2 adds about 0.4 ohms to
the power MOSFETs onresistance, but the effect of temperature on the combination is less than on a standard MOSFET due
to the lower temperature coefficient of R2. The onresistance
variation with temperature for gate voltages of 4 and 5 Volts is
shown in Figure 5.
Backtoback polysilicon diodes between gate and source
provide ESD protection to greater than 2 kV, HBM. This onchip
protection feature eliminates the need for an external Zener
diode for systems with potentially heavy line transients.
1
VGS = 4 V
0.75
VGS = 5 V
0.5
0.25
50
0
50
100
150
Figure 5. OnResistance Variation With

Temperature
100
80
60
40
20
0
25
50
75
100
125
150
BV(DSS) , DRAINSOURCE SUSTAINING VOLTAGE (VOLTS)
WAS , SINGLE PULSE AVALANCHE ENERGY (mJ)
MLD1N06CL
64
63
62
61
60
50
Figure 6. Single Pulse Avalanche Energy

versus Junction Temperature
MAXIMUM DC VOLTAGE CONSIDERATIONS

The maximum draintosource voltage that can be continuously applied across the MLD1N06CL when it is in current
limit is a function of the power that must be dissipated. This
power is determined by the maximum current limit at maximum rated operating temperature (1.8 A at 150C) and not
the RDS(on). The maximum voltage can be calculated by the
following equation:
(150 TA)
Vsupply =
ID(lim) (RJC + RCA)
where the value of RCA is determined by the heatsink that is
being used in the application.
150
Figure 7. DrainSource Sustaining

Voltage Variation With Temperature
DUTY CYCLE OPERATION

When operating in the duty cycle mode, the maximum
drain voltage can be increased. The maximum operating
temperature is related to the duty cycle (DC) by the following
equation:
TC = (VDS x ID x DC x RCA) + TA
The maximum value of VDS applied when operating in a
duty cycle mode can be approximated by:
VDS =
150 TC
ID(lim) x DC x RJC
10
FORWARD BIASED SAFE OPERATING AREA

The FBSOA curves define the maximum draintosource
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned on.
Because these curves include the limitations of simultaneous
high voltage and high current, up to the rating of the device,
they are especially useful to designers of linear systems. The
curves are based on a case temperature of 25C and a maximum junction temperature of 150C. Limitations for repetitive
pulses at various case temperatures can be determined by
using the thermal response curves. Motorola Application
Note, AN569, Transient Thermal Resistance General
Data and Its Use provides detailed instructions.
0
50
100
VGS = 10 V
SINGLE PULSE
TC = 25C
10 s
100 s
1.0
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
dc
1.0
10
100
Figure 8. Maximum Rated Forward Bias

Safe Operating Area (MLD1N06CL)
481
MLD1N06CL
1.0
D = 0.5
0.2
0.1
P(pk)
0.1 0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E 05
1.0E 04
1.0E 03
1.0E 02
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E 01
1.0E+00
1.0E+01
t, TIME (s)
Figure 9. Thermal Response (MLD1N06CL)
ton
VDD
RL
Vin
PULSE GENERATOR
Rgen
Vout
td(on)
toff
tr
90%
td(off)
DUT
OUTPUT, Vout
INVERTED
z = 50
10%
50
90%
50
50%
INPUT, Vin
ACTIVE CLAMPING
SMARTDISCRETES technology can provide onchip realization of the popular gatetosource and gatetodrain
Zener diode clamp elements. Until recently, such features
have been implemented only with discrete components
which consume board space and add system cost. The
SMARTDISCRETES technology approach economically
melds these features and the power chip with only a slight
increase in chip area.
In practice, backtoback diode elements are formed in a
polysilicon region monolithicly integrated with, but electrically
isolated from, the main device structure. Each backtoback
diode element provides a temperature compensated voltage
element of about 7.2 volts. As the polysilicon region is
formed on top of silicon dioxide, the diode elements are free
from direct interaction with the conduction regions of the
power device, thus eliminating parasitic electrical effects
while maintaining excellent thermal coupling.
To achieve high gatetodrain clamp voltages, several
voltage elements are strung together; the MLD1N06CL uses
8 such elements. Customarily, two voltage elements are
used to provide a 14.4 volt gatetosource voltage clamp.
For the MLD1N06CL, the integrated gatetosource voltage
482
tf
90%
50%
PULSE WIDTH
10%
elements provide greater than 2.0 kV electrostatic voltage

protection.
The avalanche voltage of the gatetodrain voltage clamp
is set less than that of the power MOSFET device. As soon
as the draintosource voltage exceeds this avalanche voltage, the resulting gatetodrain Zener current builds a gate
voltage across the gatetosource impedance, turning on
the power device which then conducts the current. Since virtually all of the current is carried by the power device, the
gatetodrain voltage clamp element may be small in size.
This technique of establishing a temperature compensated
draintosource sustaining voltage (Figure 7) effectively removes the possibility of draintosource avalanche in the
power device.
The gatetodrain voltage clamp technique is particularly
useful for snubbing loads where the inductive energy would
otherwise avalanche the power device. An improvement in
ruggedness of at least four times has been observed when
inductive energy is dissipated in the gatetodrain clamped
conduction mode rather than in the more stressful gateto
source avalanche mode.
MLD1N06CL
TYPICAL APPLICATIONS: INJECTOR DRIVER, SOLENOIDS, LAMPS, RELAY COILS
The MLD1N06CL has been designed to allow direct interface to the output of a microcontrol unit to control an isolated
load. No additional series gate resistance is required, but a
40 k gate pulldown resistor is recommended to avoid a
floating gate condition in the event of an MCU failure. The internal clamps allow the device to be used without any external transistent suppressing components.
VBAT
VDD
D
MCU
MLD1N06CL
S
483
MOTOROLA
Data Sheet
SMARTDISCRETES
Designer's
The MLD2N06CL is designed for applications that require a rugged power switching
occur.
The MLD2N06CL is fabricated using Motorolas SMARTDISCRETES technology which
MLD2N06CL
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.4 OHMS
R1
G
R2
S

Rating
Symbol
Value
Unit
VDSS
Clamped
Vdc
VDGR
Clamped
Vdc
VGS
10
Vdc
Drain Current Continuous @ TC = 25C
ID
Selflimited
Adc
PD
40
Watts
ESD
2.0
kV
TJ, Tstg
50 to 150
TJ(max)
150
RJC
3.12
C/W
TL
260
80
mJ
Electrostatic Voltage
Maximum Junction Temperature

DPAK Surface Mount
DRAINTOSOURCE AVALANCHE CHARACTERISTICS

(Starting TJ = 25C, ID = 2.0 A, L = 40 mH)
EAS
484
MLD2N06CL
Characteristic
Symbol
Min
Typ
Max
58
58
62
62
66
66
0.6
6.0
5.0
20
0.5
1.0
5.0
20
1.0
0.6
1.5
1
2.0
1.6
3.8
1.6
4.4
2.4
5.2
2.9
0.3
0.53
0.4
0.7
1.0
1.4
1.1
1.5
td(on)
1.0
1.5
tr
3.0
5.0
td(off)
5.0
8.0
tf
3.0
5.0
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V(BR)DSS

IDSS

(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150C)
IGSS
Vdc
Adc
Adc
(ID = 250 Adc, VDS = VGS, TJ = 150C)
VGS(th)

Vdc
ID(lim)

(ID = 1.0 Adc, VGS = 5.0 Vdc)
(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150C)
Adc
RDS(on)
gFS
Static SourcetoDrain Diode Voltage

(IS = 1.0 Adc, VGS = 0 Vdc)
VSD
Ohms
mhos
Vdc
SWITCHING CHARACTERISTICS(2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 30 Vdc, ID = 1.0 Adc,

Fall Time

4.0
TJ = 25C
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
VDS 7.5 V
55C
25C
3.5
I D , DRAIN CURRENT (AMPS)
2.5 V
TJ = 150C
3.0
2.5
2.0
1.5
1.0
0.5
2.0 V
0
485
MLD2N06CL
486
I D(lim) , DRAIN CURRENT (AMPS)
6
VGS = 5 V
VDS = 10 V
5
4
3
2
1
0
50
50
100
150
Figure 3. ID(lim) Variation

With Temperature
RDS(on) , ONRESISTANCE (OHMS)
1.0
ID = 1 A
0.8
0.6
100C
0.4
25C
0.2
TJ = 50C
0
7
8
4
5
6
2
3
10

0.6

Even with no heatsink, the MLD2N06CL can withstand a
TEMPERATURE
The onchip circuitry of the MLD2N06CL offers an integrated
Since the MLD2N06CL continues to conduct current and dissipate power during a shorted load condition, it is important to
provide sufficient heatsinking to limit the device junction temperature to a maximum of 150C.
shown in Figure 5.
ID = 1 A
0.5
0.4
0.3
VGS = 4 V
VGS = 5 V
0.2
0.1
0
50
0
50
100
150

Temperature
MLD2N06CL
BV(DSS) , DRAINTOSOURCE SUSTAINING
VOLTAGE (VOLTS)
EAS , SINGLE PULSE DRAINTOSOURCE

AVALANCHE ENERGY (mJ)
100
ID = 2 A
80
60
40
20
0
25
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (C)
150
64.0
63.5
63.0
62.5
62.0
61.5
61.0
60.5
60.0
50
Figure 6. Maximum Avalanche Energy

versus Starting Junction Temperature

The maximum draintosource voltage that can be continuously applied across the MLD2N06CL when it is in current
following equation:
Vsupply =
(150 TA)
ID(lim) (RJC + RCA)

0
50
100
TJ = JUNCTION TEMPERATURE
150


equation:
VDS =
150 TC
ID(lim) x DC x RJC
10

ID = 20 mA
VGS = 10 V
SINGLE PULSE
TC = 25C
1.0
dc
10 ms
1 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1.0
10
100

Safe Operating Area (MLD2N06CL)
487
MLD2N06CL
1.0
D = 0.5
0.2
0.1
P(pk)
0.1 0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E 05
1.0E 04
1.0E 03
1.0E 02
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E 01
1.0E+00
1.0E+01
t, TIME (s)
Figure 9. Thermal Response (MLD2N06CL)
ton
VDD
RL
Vin
PULSE GENERATOR
Rgen
Vout
td(on)
toff
tr
90%
td(off)
DUT
OUTPUT, Vout
INVERTED
z = 50
10%
50
90%
50
50%
INPUT, Vin
ACTIVE CLAMPING
voltage elements are strung together; the MLD2N06CL uses
For the MLD2N06CL, the integrated gatetosource voltage
488
tf
90%
50%
PULSE WIDTH
10%

protection.
power device.
MLD2N06CL
The MLD2N06CL has been designed to allow direct interface to the output of a microcontrol unit to control an isolated
VBAT
VDD
D
MCU
MLD2N06CL
S
489
MOTOROLA
SMARTDISCRETES
These SMARTDISCRETES devices feature current limiting for short circuit
protection, an integral gatetosource clamp for ESD protection and gatetodrain
clamp for overvoltage protection. No additional gate series resistance is required
when interfacing to the output of a MCU, but a 40 k gate pulldown resistor is
recommended to avoid a floating gate condition.
The internal gatetosource and gatetodrain clamps allow the devices to be
applied without use of external transient suppression components. The gateto
source clamp protects the MOSFET input from electrostatic gate voltage stresses
up to 2.0 kV. The gatetodrain clamp protects the MOSFET drain from drain
avalanche stresses that occur with inductive loads. This unique design provides
voltage clamping that is essentially independent of operating temperature.
The MLP1N06CL is fabricated using Motorolas SMARTDISCRETES technology which combines the advantages of a power MOSFET output device with
onchip protective circuitry. This approach offers an economical means for
providing additional functions that protect a power MOSFET in harsh automotive
and industrial environments. SMARTDISCRETES devices are specified over a
wide temperature range from 50C to 150C.
MLP1N06CL
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.75 OHMS
R1
G
Temperature Compensated GatetoDrain Clamp Limits Voltage Stress

Applied to the Device and Protects the Load From Overvoltage
Controlled Switching Minimizes RFI
R2
Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors

Symbol
Value
Unit
VDSS
Clamped
Vdc
VDGR
Clamped
Vdc
VGS
10
Vdc

Drain Current Single Pulse
ID
IDM
Selflimited
1.8
Adc
Rating
PD
40
Watts
Electrostatic Discharge Voltage (Human Body Model)
ESD
2.0
kV
TJ, Tstg
50 to 150
3.12
62.5
C/W
260
G
D
S
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1/8 from case
RJC
RJA
TL

TO220AB
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS

(Starting TJ = 25C, ID = 2.0 A, L = 40 mH) (Figure 6)
EAS
80
mJ
REV 1
490
MLP1N06CL
Characteristic
Symbol
Min
Typ
Max
Unit
59
59
62
62
65
65
0.6
6.0
5.0
20
0.5
1.0
5.0
20
1.0
0.6
1.5
2.0
1.6
0.63
0.59
1.1
1.0
0.75
0.75
1.9
1.8
gFS
1.0
1.4
mhos
VSD
1.1
1.5
Vdc
2.0
1.1
2.3
1.3
2.75
1.8
td(on)
1.2
2.0
tr
4.0
6.0
td(off)
4.0
6.0
tf
3.0
5.0
OFF CHARACTERISTICS
DraintoSource Sustaining Voltage (Internally Clamped)
(ID = 20 mA, VGS = 0)
(ID = 20 mA, VGS = 0, TJ = 150C)
V(BR)DSS

(VDS = 45 V, VGS = 0)
(VDS = 45 V, VGS = 0, TJ = 150C)
IDSS
GateBody Leakage Current

(VG = 5.0 V, VDS = 0)
(VG = 5.0 V, VDS = 0, TJ = 150C)
IGSS
Vdc
Adc
Adc
ON CHARACTERISTICS*
(ID = 250 A, VDS = VGS)
(ID = 250 A, VDS = VGS, TJ = 150C)
VGS(th)

(ID = 1.0 A, VGS = 4.0 V)
(ID = 1.0 A, VGS = 5.0 V)
(ID = 1.0 A, VGS = 4.0 V, TJ = 150C)
(ID = 1.0 A, VGS = 5.0 V, TJ = 150C)
RDS(on)
Forward Transconductance (ID = 1.0 A, VDS = 10 V)

Static SourcetoDrain Diode Voltage (IS = 1.0 A, VGS = 0)
(VGS = 5.0 V, VDS = 10 V)
(VGS = 5.0 V, VDS = 10 V, TJ = 150C)
Vdc
Ohms
ID(lim)
RESISTIVE SWITCHING CHARACTERISTICS*

TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 25 V, ID = 1.0 A,
VGS = 5.0 V, RG = 50 Ohms)
Fall Time
* Indicates Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
TJ = 25C
10 V
6V
8V
4V
VGS = 3 V
VDS 7.5 V
4
50C
3
25C
2
TJ = 150C
0
0
2
4
6
2
4
6
491
MLP1N06CL
492
ID(lim) , DRAIN CURRENT (AMPS)
4
VGS = 5 V
VDS = 7.5 V
3
0
50
0
50
100
150
Figure 3. ID(lim) Variation With Temperature
R DS(on), ONRESISTANCE (OHMS)
ID = 1 A
2
25C
150C
TJ = 50C
2
4
6
8
10

1.25
ID = 1 A
RDS(on), ONRESISTANCE (OHMS)

that can be directly interfaced to a microcontroller unit
(MCU). Ideal applications include automotive fuel injector
driver, incandescent lamp driver or other applications where
a high inrush current or a shorted load condition could occur.
of heatsinking that is provided, the size or rating of the device, its initial junction temperature, and the supply voltage.
Without some form of current limiting, a shorted load can
raise a devices junction temperature beyond the maximum
rated operating temperature in only a few milliseconds.
Even with no heatsink, the MLP1N06CL can withstand a
Volts) for almost a second if its initial operating temperature
is under 100C. For longer periods of operation in the currentlimited mode, device heatsinking can extend operation
from several seconds to indefinitely depending on the
amount of heatsinking provided.
TEMPERATURE
The onchip circuitry of the MLP1N06CL offers an integrated means of protecting the MOSFET component from
high inrush current or a shorted load. As shown in the schematic diagram, the current limiting feature is provided by an
NPN transistor and integral resistors R1 and R2. R2 senses
the current through the MOSFET and forward biases the
NPN transistors base as the current increases. As the NPN
turns on, it begins to pull gate drive current through R1, dropping the gate drive voltage across it, and thus lowering the
voltage across the gatetosource of the power MOSFET
and limiting the current. The current limit is temperature dependent as shown in Figure 3, and decreases from about 2.3
Amps at 25C to about 1.3 Amps at 150C.
Since the MLP1N06CL continues to conduct current and
dissipate power during a shorted load condition, it is important to provide sufficient heatsinking to limit the device junction temperature to a maximum of 150C.
The metal current sense resistor R2 adds about 0.4 ohms
to the power MOSFETs onresistance, but the effect of temperature on the combination is less than on a standard
MOSFET due to the lower temperature coefficient of R2. The
onresistance variation with temperature for gate voltages of
4 and 5 Volts is shown in Figure 5.
provide ESD protection to greater than 2 kV, HBM. This on
chip protection feature eliminates the need for an external
Zener diode for systems with potentially heavy line transients.
1
VGS = 4 V
0.75
VGS = 5 V
0.5
0.25
50
0
50
100
150

Temperature
100
80
60
40
20
0
25
50
75
100
125
150
BV(DSS) , DRAINSOURCE SUSTAINING VOLTAGE (VOLTS)
WAS , SINGLE PULSE AVALANCHE ENERGY (mJ)
MLP1N06CL
64
63
62
61
60
50
Figure 6. Single Pulse Avalanche Energy

versus Junction Temperature

0
50
100
150


equation:
VDS =
150 TC
ID(lim) x DC x RJC
10

The maximum draintosource voltage that can be continuously applied across the MLP1N06CL when it is in current
following equation:
Vsupply =
(150 TA)
ID(lim) (RJC + RCA)

6
ID(lim) MAX
3
2
1 ms
1.5
ms
5 ms
ID(lim) MIN
dc
1
0.6
DEVICE/POWER LIMITED
RDS(on) LIMITED
0.3
VGS = 5 V
SINGLE PULSE
TC = 25C
0.2
0.1
10
20
30
60
100

Safe Operating Area (MLP1N06CL)
493
r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)
MLP1N06CL
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
RJC(t) = r(t) RJC

RJC(t) = 3.12C/W Max
D Curves Apply for Power
Pulse Train Shown
Read Time at t1
0.1
0.1
0.07
0.05
0.05
0.02
P(pk)
0.03
t1
0.01
t2
DUTY CYCLE, D =t1/t2
0.02
0.01
0.01
SINGLE PULSE
0.02 0.03 0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
200 300
500
1000
t, TIME (ms)
Figure 9. Thermal Response (MLP1N06CL)
RL
Vin
PULSE GENERATOR
Rgen
Vout
toff
ton
VDD
td(on)
tr
90%
td(off)
DUT
OUTPUT, Vout
INVERTED
z = 50
10%
50
90%
50
50%
INPUT, Vin
ACTIVE CLAMPING
voltage elements are strung together; the MLP1N06CL uses
For the MLP1N06CL, the integrated gatetosource voltage
494
tf
90%
50%
PULSE WIDTH
10%

protection.
power device.
MLP1N06CL
The MLP1N06CL has been designed to allow direct interface to the output of a microcontrol unit to control an isolated
VBAT
VDD
D
MCU
MLP1N06CL
S
495
MOTOROLA
Data Sheet
SMARTDISCRETES
Designer's
The MLP2N06CL is designed for applications that require a rugged power switching
occur.
The MLP2N06CL is fabricated using Motorolas SMARTDISCRETES technology which
MLP2N06CL
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.4 OHMS
R1
G
R2
S

Rating
Symbol
Value
Unit
VDSS
Clamped
Vdc
VDGR
Clamped
Vdc
VGS
10
Vdc
ID
Selflimited
Adc
PD
40
Watts
ESD
2.0
kV
TJ, Tstg
50 to 150
TJ(max)
150
RJC
3.12
C/W
TL
260
80
mJ
Electrostatic Voltage
G
D
S
Maximum Junction Temperature

TO220AB

(Starting TJ = 25C, ID = 2.0 A, L = 40 mH)
EAS
496
MLP2N06CL
Characteristic
Symbol
Min
Typ
Max
58
58
62
62
66
66
0.6
6.0
5.0
20
0.5
1.0
5.0
20
1.0
0.6
1.5
1
2.0
1.6
3.8
1.6
4.4
2.4
5.2
2.9
0.3
0.53
0.4
0.7
1.0
1.4
1.1
1.5
td(on)
1.0
1.5
tr
3.0
5.0
td(off)
5.0
8.0
tf
3.0
5.0
Unit
OFF CHARACTERISTICS
V(BR)DSS

IDSS

(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150C)
IGSS
Vdc
Adc
Adc
(ID = 250 Adc, VDS = VGS, TJ = 150C)
VGS(th)

Vdc
ID(lim)

(ID = 1.0 Adc, VGS = 5.0 Vdc)
(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150C)
Adc
RDS(on)
gFS
Static SourcetoDrain Diode Voltage

VSD
Ohms
mhos
Vdc
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 30 Vdc, ID = 1.0 Adc,

Fall Time

4.0
TJ = 25C
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
VDS 7.5 V
55C
25C
3.5
2.5 V
TJ = 150C
3.0
2.5
2.0
1.5
1.0
0.5
2.0 V
0
497
MLP2N06CL
498
I D(lim) , DRAIN CURRENT (AMPS)
6
VGS = 5 V
VDS = 10 V
5
4
3
2
1
0
50
50
100
150
Figure 3. ID(lim) Variation With Temperature
1.0
ID = 1 A
0.8
0.6
100C
0.4
25C
0.2
TJ = 50C
0
7
8
4
5
6
2
3
10

0.6

Even with no heatsink, the MLP2N06CL can withstand a
TEMPERATURE
The onchip circuitry of the MLP2N06CL offers an integrated
Since the MLP2N06CL continues to conduct current and dissipate power during a shorted load condition, it is important to provide sufficient heatsinking to limit the device junction temperature
to a maximum of 150C.
shown in Figure 5.
ID = 1 A
0.5
0.4
0.3
VGS = 4 V
VGS = 5 V
0.2
0.1
0
50
0
50
100
150

Temperature
MLP2N06CL
BV(DSS) , DRAINTOSOURCE SUSTAINING
VOLTAGE (VOLTS)
EAS , SINGLE PULSE DRAINTOSOURCE

100
ID = 2 A
80
60
40
20
0
25
50
75
100
125
150
64.0
63.5
63.0
62.5
62.0
61.5
61.0
60.5
60.0
50
Figure 6. Maximum Avalanche Energy

versus Starting Junction Temperature

The maximum draintosource voltage that can be continuously applied across the MLP2N06CL when it is in current
following equation:
Vsupply =
(150 TA)
ID(lim) (RJC + RCA)

0
50
100
TJ = JUNCTION TEMPERATURE
150


equation:
VDS =
150 TC
ID(lim) x DC x RJC
10

ID = 20 mA
VGS = 10 V
SINGLE PULSE
TC = 25C
1.0
dc
10 ms
1 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1.0
10
100

Safe Operating Area (MLP2N06CL)
499
MLP2N06CL
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E 05
1.0E 04
1.0E 03
1.0E 02
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E 01
1.0E+00
1.0E+01
t, TIME (s)
Figure 9. Thermal Response (MLP2N06CL)
ton
VDD
RL
Vin
PULSE GENERATOR
Rgen
Vout
td(on)
toff
tr
90%
td(off)
DUT
OUTPUT, Vout
INVERTED
z = 50
10%
50
90%
50
50%
INPUT, Vin
ACTIVE CLAMPING
voltage elements are strung together; the MLP2N06CL uses
For the MLP2N06CL, the integrated gatetosource voltage
4100
tf
90%
50%
PULSE WIDTH
10%

protection.
power device.
MLP2N06CL
The MLP2N06CL has been designed to allow direct interface to the output of a microcontrol unit to control an isolated
VBAT
VDD
D
MCU
MLP2N06CL
S
4101
MOTOROLA
Medium Power Surface Mount Products
MMDF1N05E
TMOS Dual N-Channel

Field Effect Transistors
MiniMOS devices are an advanced series of power MOSFETs

which utilize Motorolas TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the draintosource diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dcdc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
DUAL TMOS MOSFET

50 VOLTS
1.5 AMPERE
RDS(on) = 0.30 OHM
G
CASE 75105, Style 11
SO8
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
IDSS Specified at Elevated Temperature
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Symbol
Value
Unit
VDS
50
Volts
VGS
20
Volts

Drain Current Pulsed
ID
IDM
2.0
10
Amps
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25C

(VDD = 25 V, VGS = 10 V, IL = 2 Apk)
EAS
300
mJ
TJ, Tstg
55 to 150
PD
2.0
Watts
RJA
62.5
C/W
TL
260
10
C
Sec
Rating

Total Power Dissipation @ TA = 25C
Thermal Resistance Junction to Ambient (1)
Maximum Temperature for Soldering,
Time in Solder Bath
DEVICE MARKING
F1N05
(1) Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided) with one die operating, 10 sec. max.
Device
MMDF1N05ER2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500
REV 4
4102
MMDF1N05E
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
Vdc

(VDS = 50 V, VGS = 0)
IDSS
250
Adc

(VGS = 20 Vdc, VDS = 0)
IGSS
100
nAdc
VGS(th)
1.0
3.0
Vdc
RDS(on)
RDS(on)
0.30
0.50
gFS
1.5
mhos
Ciss
330
pF
Coss
160
Crss
50
td(on)
20
tr
30
td(off)
40
tf
25
Qg
12.5
Qgs
1.9
Qgd
3.0
VSD
1.6
trr
45
ns
OFF CHARACTERISTICS
(VGS = 0, ID = 250 A)
(VDS = VGS, ID = 250 Adc)
DraintoSource OnResistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.6 Adc)
Ohms
Forward Transconductance (VDS = 15 V, ID = 1.5 A)

Input Capacitance
Output Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
Reverse Transfer Capacitance

TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 10 V, ID = 1.5 A, RL = 10 ,
VG = 10 V, RG = 50 )
Fall Time
Total Gate Charge
GateSource Charge
(VDS = 10 V,
V ID = 1.5
1 5 A,
A
VGS = 10 V)
GateDrain Charge
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25C)
Forward Voltage(1)
((IS = 1.5 A, VGS = 0 V))
(dIS/dt = 100 A/s)
ns
nC
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

4103
MMDF1N05E
10
6V
8V
TJ = 25C
10
8
4.5 V
6
4V
4
VGS = 3.5 V
4
6
8
25C
10
RDS(on) , DRAINTOSOURCE ONRESISTANCE

(NORMALIZED)
RDS(on) , DRAINTOSOURCE ONRESISTANCE (OHMS)
VGS = 10 V
0.4
0.3
100C
25C
0.1
55C
0
4
6
0.5
ID = 1.5 A
VGS = 0
0.3
0.2
0.1
5
6
7
8
Figure 5. On Resistance versus

4104
125
150
1.8
1.6
1.4
VGS = 10 V
ID = 1.5 A
1.2
1
0.8
0.6
0.4
0.2
0
50
25
25
75
0
50
100
Figure 4. OnResistance Variation with Temperature
10
V GS(th), GATE THRESHOLD VOLTAGE (NORMALIZED)
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 3. OnResistance versus Drain Current
0.4
55C
3
0.5
Figure 1. OnRegion Characteristics
0.2
25C
100C
100C
0
55C
VDS 10 V
5V
10 V
1.2
VDS = VGS
ID = 1 mA
1.1
0.9
0.8
0.7
50
25
0
25
50
75
100
125
150
Figure 6. Gate Threshold Voltage Variation

with Temperature
MMDF1N05E
VDS
12
Ciss
TJ = 25C
Crss
1000
C, CAPACITANCE (pF)
800
VDS = 0
VGS = 0
600
Ciss
400
Coss
200
Crss
0
VGS , GATETOSOURCE VOLTAGE (VOLTS)
VGS
1200
20
10
0
20
25
15
5
5
10
15
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
VDS = 25 V
ID = 1.2 A
10
8
6
4
2
0
6
10
8
12
14
16
Figure 8. Gate Charge versus

100
Forward Biased Safe Operating Area

SAFE OPERATING AREA INFORMATION
10
VGS = 20 V
SINGLE PULSE
TC = 25C
Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu 0.06

thick single sided) with one die operating, 10s max.
100 s
10 s
10 ms
1
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
100
Figure 9. Maximum Rated Forward Biased

Safe Operating Area
Rthja(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Normalized to ja at 10s.
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
4105
MOTOROLA
Designer's
Data Sheet
MMDF2C01HD
Complementary TMOS

which utilize Motorolas High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dcdc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Diode Exhibits High Speed, With Soft Recovery
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
12 VOLTS
RDS(on) = 0.045 OHM
(NCHANNEL)
RDS(on) = 0.18 OHM
(PCHANNEL)
D
NChannel

SO8
S
D
PChannel
NSource
NDrain
NGate
NDrain
PSource
PDrain
PGate
PDrain
Top View
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)(1)

Rating
NChannel
PChannel
GatetoSource Voltage
Pulsed
NChannel
PChannel
NChannel
PChannel
Symbol
Value
Unit
VDSS
20
12
Vdc
VGS
8.0
Vdc
ID
5.2
3.4
48
17
55 to 150
IDM
TJ and Tstg
Total Power Dissipation @ TA= 25C (2)

Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds.
PD
2.0
Watts
RJA
62.5
C/W
TL
260
DEVICE MARKING
D2C01
(1) Negative signs for PChannel device omitted for clarity.
Device
MMDF2C01HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4106
MMDF2C01HD
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)(1)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
V(BR)DSS
(N)
(P)
20
12
Vdc
(N)
(P)
1.0
1.0
100
(N)
(P)
0.7
0.7
0.8
1.0
1.1
1.1
(N)
(P)
0.035
0.16
0.045
0.18
(N)
(P)
0.043
0.2
0.055
0.22
(N)
(P)
3.0
3.0
6.0
4.75
Ciss
(N)
(P)
425
530
595
740
Coss
(N)
(P)
270
410
378
570
Crss
(N)
(P)
115
177
230
250
td(on)
(N)
(P)
13
21
26
45
tr
(N)
(P)
60
156
120
315
td(off)
(N)
(P)
20
38
40
75
tf
(N)
(P)
29
68
58
135
td(on)
(N)
(P)
10
16
20
35
tr
(N)
(P)
42
44
84
90
td(off)
(N)
(P)
24
68
48
135
tf
(N)
(P)
28
54
56
110
QT
(N)
(P)
9.2
9.3
13
13
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
(VGS = 0 Vdc, VDS = 20 Vdc)
Adc
IDSS

(VGS = 8.0 Vdc, VDS = 0)
IGSS
nAdc
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 1.0 Adc)
VGS(th)
RDS(on)
Ohm
RDS(on)
Forward Transconductance
(VDS = 2.5 Adc, ID = 2.0 Adc)
(VDS = 2.5 Adc, ID = 1.0 Adc)
Vdc
Ohm
gFS
mhos
Input Capacitance
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
((VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2.7 Vdc,
RG = 2.3 )
(VDD = 6.0 Vdc, ID = 2.0 Adc,
dc,
VGS = 2.7 Vdc,
RG = 6.0 )
TurnOn Delay Time

Rise Time
TurnOff Delay Time
Fall Time
((VDS = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc,
RG = 2.3 )
(VDS = 6.0 Vdc, ID = 2.0 Adc,
5 Vdc,
dc,
VGS = 4.5
RG = 6.0 )
Total Gate Charge

GateSource Charge
(VDS = 10 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc)
Q1
(N)
(P)
1.3
0.8
GateDrain Charge
(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc))
Q2
(N)
(P)
3.5
4.0
Q3
(N)
(P)
3.0
3.0

ns
nC
(continued)
4107
MMDF2C01HD
ELECTRICAL CHARACTERISTICS continued (TA = 25C unless otherwise noted)(1)
Characteristic
Forward Voltage(2)
( F = IS,
(I
dIS/dt = 100 A/s)
Symbol
Polarity
Min
Typ
Max
Unit
VSD
(N)
(P)
0.95
1.69
1.1
2.0
Vdc
trr
(N)
(P)
38
48
ns
ta
(N)
(P)
17
23
tb
(N)
(P)
22
25
QRR
(N)
(P)
0.028
0.05


NChannel
4
VGS = 8 V
4.5 V
3.1 V
6 2.7 V
VGS = 8 V
4.5 V
3.1 V
TJ = 25C
2.3 V
2.5 V
PChannel
2.1 V
1.9 V
1.7 V
2.5 V
TJ = 25C
2.3 V
2.7 V
2.1 V
2
1.9 V
1
1.7 V
1.5 V
1.3 V
0
0.2
0.4
0.6
0.8
1.2
1.4
1.5 V
1.6
1.8
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.6
2.8
100C
25C
TJ = 55C
0.2
VDS 10 V
VDS 10 V
2
100C
25C
TJ = 55C
0
1.2
1.4
1.6
1.8
2
4108
2.2
1.2
1.4
1.6
1.8
2.2
2.4
MMDF2C01HD
PChannel
0.07
TJ = 25C
ID = 2 A
0.06
0.05
0.04
0.03
6
2
4
NChannel
0.35
TJ = 25C
ID = 1 A
0.30
0.25
0.20
0.15
0.1
2
4
6
Figure 3. OnResistance versus

0.050
TJ = 25C
VGS = 2.7 V
0.045
0.040
4.5 V
0.035
0.030
6
4

0.30
TJ = 25C
0.25
4.5 V
0.15
0.10
VGS = 4.5 V
ID = 4 A
0.5
0
50
25
25
50
75
100
125
150
0.8
1.6
2.4
3.2

and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE

(NORMALIZED)

(NORMALIZED)
VGS = 2.7 V
0.20

and Gate Voltage
1.5
1.5
VGS = 4.5 V
ID = 2 A
0.5
0
50
25
25
50
75
100
125
Figure 5. OnResistance Variation with

Temperature

Temperature
150
4109
MMDF2C01HD
NChannel
PChannel
100
1000
VGS = 0 V
VGS = 0 V
10
I DSS , LEAKAGE (nA)
TJ = 125C
100C
TJ = 125C
100
10
0
6
2
4
8
10
12
Figure 6. DrainToSource Leakage

Current versus Voltage
4
8
12

POWER MOSFET SWITCHING

Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge controlled.
The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can be charged
by current from the generator.
The capacitance (Ciss) is read from the capacitance curve at

a voltage corresponding to the offstate condition when calculating td(on) and is read at a voltage corresponding to the
onstate when calculating td(off).
The published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies
greatly with applied voltage. Accordingly, gate charge data is
used. In most cases, a satisfactory estimate of average input
current (IG(AV)) can be made from a rudimentary analysis of
the drive circuit so that
At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source
lead, inside the package and in the circuit wiring which is
common to both the drain and gate current paths, produces a
voltage at the source which reduces the gate drive current.
The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex.
The MOSFET output capacitance also complicates the
mathematics. And finally, MOSFETs have finite internal gate
resistance which effectively adds to the resistance of the
driving source, but the internal resistance is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is
affected by the parasitic circuit elements. If the parasitics
were not present, the slope of the curves would maintain a
value of unity regardless of the switching speed. The circuit
used to obtain the data is constructed to minimize common
inductance in the drain and gate circuit loops and is believed
readily achievable with board mounted components. Most
power electronic loads are inductive; the data in the figure is
taken with a resistive load, which approximates an optimally
snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces
switching losses.
t = Q/IG(AV)
During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as
the plateau voltage, VSGP. Therefore, rise and fall times may
be approximated by the following:
tr = Q2 x RG/(VGG VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turnon and turnoff delay times, gate current is
not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
4110
MMDF2C01HD
NChannel
2000
VDS = 0 V
VGS = 0 V
2000
TJ = 25C
1600
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1600
PChannel
1200
Crss
800
Ciss
VGS = 0 V
TJ = 25C
Ciss
1200
800
Crss
Ciss
Coss
400
VDS = 0 V
400
Coss
Crss
4
VGS
12
VDS
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (Volts)
8
VGS
VDS
3
6
Q1
Q2
ID = 4 A
TJ = 25C
2
Q3
2
0
10
10
QT
8
VGS
VDS
3
2 Q1
ID = 2 A
TJ = 25C
Q2
2
Q3
0
10
QT, TOTAL CHARGE (nC)
Figure 8. GateToSource and DrainToSource


1000
VDD = 6 V
ID = 2 A
VGS = 4.5 V
TJ = 25C
tr
tf
td(off)
t, TIME (ns)
VDD = 6 V
ID = 4 A
VGS = 4.5 V
TJ = 25C
10
VDS , DRAINTOSOURCE VOLTAGE (VOLTS)
10
100
t, TIME (ns)
0
VGS
QT
Crss
4
VDS
12
td(on)
100
td(off)
tf
tr
td(on)
1
0.1
10
1
10
100
10
Figure 9. Resistive Switching Time

Variation versus Gate Resistance

100
4111
MMDF2C01HD
DRAINTOSOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse recovery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier device, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 14. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ringing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diodes negative di/dt during ta is directly controlled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode characteristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse recovery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise generated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
NChannel
PChannel
2
VV
GS
GS= =0 0VV
TJTJ= =25C
25C
I S , SOURCE CURRENT (AMPS)
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
4112
VGS = 0 V
TJ = 25C
1.5
0.5
0
0.4
0.6
0.8
1.2
1.4
1.6
1.8
MMDF2C01HD
di/dt = 300 A/s
Standard Cell Density

trr
I S , SOURCE CURRENT
High Cell Density

trr
tb
ta
t, TIME
Figure 11. Reverse Recovery Time (trr)
SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, Transient Thermal Resistance General Data and Its Use.
Switching between the offstate and the onstate may traverse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded, and that the transition
time (tr, tf) does not exceed 10 s. In addition the total power
averaged over a complete switching cycle must not exceed

(TJ(MAX) TC)/(RJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction temperature.
NChannel
PChannel
100
10
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100 s
1 ms
100
10 ms
1
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
100

Safe Operating Area
10
VGS = 8 V
SINGLE PULSE
TC = 25C

1 ms
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100

Safe Operating Area
4113
MMDF2C01HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4114
MOTOROLA
Designer's
Data Sheet
MMDF2C02E
Complementary TMOS

Battery Life
Diode Exhibits High Speed, with Soft Recovery
COMPLEMENTARY
DUAL TMOS POWER FET
2.5 AMPERES
25 VOLTS
RDS(on) = 0.100 OHM
(NCHANNEL)
RDS(on) = 0.25 OHM
(PCHANNEL)
D
NChannel
G
SO8
S
D
PChannel
NSource
NDrain
NGate
NDrain
PSource
PDrain
PGate
PDrain
Top View

Rating
Pulsed
NChannel
PChannel
NChannel
PChannel
Symbol
Value
Unit
VDSS
VGS
25
Vdc
20
Vdc
3.6
2.5
18
13
Adc
ID
IDM

TJ and Tstg
PD

(VDD = 20 V, VGS = 10 V, Peak IL = 9.0 A, L = 6.0 mH, RG = 25 )
(VDD = 20 V, VGS = 10 V, Peak IL = 7.0 A, L = 10 mH, RG = 25 )
55 to 150
2.0
Watts
EAS
Maximum Lead Temperature for Soldering, 0.0625 from case. Time in Solder Bath is 10 seconds.
mJ
245
245
NChannel
PChannel
RJA
62.5
C/W
TL
260
DEVICE MARKING
F2C02
Device
MMDF2C02ER2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4115
MMDF2C02E
Characteristic
Symbol
Polarity
Min
Typ
Max
25
Unit
OFF CHARACTERISTICS
V(BR)DSS
Vdc

IDSS
(N)
(P)
1.0
1.0
Adc
GateBody Leakage Current (VGS = 20 Vdc, VDS = 0)
IGSS
100
nAdc
1.0
2.0
3.0
(N)
(P)
0.100
0.250
(N)
(P)
0.200
0.400
(N)
(P)
2.0
2.0
(N)
(P)
1.0
1.0
2.6
2.8
Ciss
(N)
(P)
380
340
532
475
Coss
(N)
(P)
235
220
329
300
Crss
(N)
(P)
55
75
110
150
td(on)
(N)
(P)
10
20
30
40
tr
(N)
(P)
35
40
70
80
td(off)
(N)
(P)
19
53
38
106
tf
(N)
(P)
25
41
50
82
td(on)
(N)
(P)
7.0
13
21
26
tr
(N)
(P)
17
29
30
58
td(off)
(N)
(P)
27
30
48
60
tf
(N)
(P)
18
28
30
56
QT
(N)
(P)
10.6
10
30
15
Q1
(N)
(P)
1.3
1.0
Q2
(N)
(P)
2.9
3.5
Q3
(N)
(P)
2.7
3.0
VGS(th)
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
OnState Drain Current
(VDS = 5.0 Vdc, VGS = 4.5 Vdc)
RDS(on)
ID(on)
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
Vdc
Ohm
Ohm
gFS
Adc
mhos
Input Capacitance
Output Capacitance

f = 1.0 MHz)
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
((VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,
RG = 9.1 )
(VDD = 10 Vdc, ID = 1.0 Adc,
5.0
VGS = 5
0 Vdc,
dc,
RG = 25 )
TurnOn Delay Time

Rise Time
TurnOff Delay Time
Fall Time
((VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,
RG = 6.0 )
(VDD = 10 Vdc, ID = 2.0 Adc,
0 Vdc,
dc,
VGS = 10
RG = 6.0 )
Total Gate Charge

GateSource Charge
GateDrain Charge
((VDS = 16 Vdc,, ID = 2.0 Adc,,

VGS = 10 Vdc)

4116
ns
nC
(continued)
MMDF2C02E
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
VSD
(N)
(P)
1.0
1.5
1.4
2.0
Vdc
trr
(N)
(P)
34
32
66
64
ns
ta
(N)
(P)
17
19
tb
(N)
(P)
17
12
QRR
(N)
(P)
0.025
0.035

Forward Voltage(2)


see Figure 7
((IF = IS,
dIS/dt = 100 A/s)


NChannel
4
VGS = 10 V
4.5 V
4.3 V
4.1 V
6
5
3.7 V
VGS = 10 7 V
3.5 V
PChannel
3.9 V
3.3 V
4
3.1 V
3
2.9 V
2
2.7 V
2.5 V
1
0
TJ = 25C
0
3
4.3 V
2
4.1 V
3.9 V
3.7 V
3.5 V
3.3 V
1.25
1.5
1.75
VDS 10 V
TJ = 25C
4.5 V
0.4
0.8
1.2
1.6
0.75
5
4
100C
3
25C
2
1
0
1.5
TJ = 25C
4.7 V
0.5
0.25
7
6
5V
VDS 10 V
3
100C
2
25C
TJ = 55C
1
TJ = 55C
2
2.5
3.5
0
2.5
3
3.5
4
4.5
4117
MMDF2C02E
PChannel
0.6
ID = 3.5 A
TJ = 25C
0.5
0.4
0.3
0.2
0.1
0
2
4
5
6
7
8
9
10
NChannel
0.6
ID = 1 A
TJ = 25C
0.5
0.4
0.3
0.2
0.1
0
3
TJ = 25C
VGS = 4.5
0.1
10 V
0.05
0
2
0.15
0.5
0.4
VGS = 4.5
0.3
0.2
10 V
0.1
0
0.5
1.5
1.0
0.5
50
75
100
Figure 5. OnResistance Variation

with Temperature
4118
1.5

and Gate Voltage
125
150
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)
VGS = 10 V
ID = 3.5 A
25
10
2.0
TJ = 25C

and Gate Voltage
25
0.6
0
50


2.0
VGS = 10 V
ID = 2 A
1.5
1.0
0.5
0
50
25
25
50
75
100
125
150

Temperature
MMDF2C02E
NChannel
PChannel
10000
100
VGS = 0 V
TJ = 125C
1000
100C
VGS = 0 V
100
25C
10
10
15
20
25
TJ = 125C
10
100C
12
20
16
Figure 6. DraintoSource Leakage Current

versus Voltage

versus Voltage

t = Q/IG(AV)
tf = Q2 x RG/VGSP
where

4119
MMDF2C02E
these losses.
di/dt = 300 A/s
snappy.

trr
High Cell Density

trr
tb
ta
t, TIME
4120
MMDF2C02E
SAFE OPERATING AREA
(TJ(MAX) TC)/(RJC).
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than
Although many EFETs can withstand the stress of drain
tosource avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the
accompanying graph (Figure 9). Maximum energy at currents below rated continuous ID can safely be assumed to
equal the values indicated.
NChannel
PChannel
VGS = 20 V
SINGLE PULSE
TC = 25C
10
100

100 s
100
10 s
10 ms
1
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
VGS = 20 V
SINGLE PULSE
TC = 25C
10
100 s
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
100

Safe Operating Area
280
280
I pk = 9 A
EAS, SINGLE PULSE DRAIN-TO-SOURCE



Safe Operating Area
240
200
160
120
80
40
0
10 s
10 ms
0.01
0.1
100

25
50
75
100
125
150
I pk = 7 A
240
200
160
120
80
40
0
25
50
75
100
125
150
Figure 9. Maximum Avalanche Energy versus

Starting Junction Temperature

4121
MMDF2C02E
THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03

di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4122
MOTOROLA
Designer's
Data Sheet
MMDF2C02HD
Complementary TMOS

drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
Battery Life
D
NChannel
G
SO8
S
D
PChannel
Rating
DraintoGate Voltage (RGS = 1.0 m)
Pulsed
NSource
NDrain
NGate
NDrain
PSource
PDrain
PGate
PDrain
Top View
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
20 VOLTS
RDS(on) = 0.090 OHM
(NCHANNEL)
RDS(on) = 0.160 OHM
(PCHANNEL)
Symbol
Value
Unit
VDSS
VGS
20
Vdc
20
Vdc
20
Vdc
3.8
3.3
19
20
VDGR
ID
NChannel
PChannel
NChannel
PChannel
IDM

TJ, Tstg
PD

(VDD = 20 V, VGS = 5.0 V, Peak IL = 9.0 A, L = 10 mH, RG = 25 )
(VDD = 20 V, VGS = 5.0 V, Peak IL = 6.0 A, L = 18 mH, RG = 25 )
55 to 150
2.0
Watts
EAS
mJ
405
324
NChannel
PChannel
RJA
62.5
C/W
TL
260
DEVICE MARKING
D2C02
Device
MMDF2C02HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4123
MMDF2C02HD
Characteristic
Symbol
Polarity
Min
Typ
Max
20
Unit
OFF CHARACTERISTICS
V(BR)DSS
Vdc

IDSS
(N)
(P)
1.0
1.0
Adc
IGSS
100
nAdc
1.0
1.5
2.0
(N)
(P)
0.074
0.152
0.100
0.180
(N)
(P)
0.058
0.118
0.090
0.160
(N)
(P)
2.0
2.0
3.88
3.0
Ciss
(N)
(P)
455
420
630
588
Coss
(N)
(P)
184
290
250
406
Crss
(N)
(P)
45
116
90
232
td(on)
(N)
(P)
11
19
22
38
tr
(N)
(P)
58
66
116
132
td(off)
(N)
(P)
17
25
35
50
tf
(N)
(P)
20
37
40
74
td(on)
(N)
(P)
7.0
11
21
22
tr
(N)
(P)
32
21
64
42
td(off)
(N)
(P)
27
45
54
90
tf
(N)
(P)
21
36
42
72
QT
(N)
(P)
12.5
15
18
20
VGS(th)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
Vdc
Ohm
Ohm
mhos
Input Capacitance
Output Capacitance

f = 1.0 MHz)
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
((VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,
RG = 6.0 )
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 )
TurnOn Delay Time

Rise Time
TurnOff Delay Time
Fall Time
((VDD = 10 Vdc,, ID = 3.0 Adc,,

VGS = 10 Vdc,
RG = 6.0 )
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,,
RG = 6.0 )
Total Gate Charge

GateSource Charge
(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)
Q1
(N)
(P)
1.3
1.2
GateDrain Charge
(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc))
Q2
(N)
(P)
2.8
5.0
Q3
(N)
(P)
2.4
4.0

4124
ns
nC
(continued)
MMDF2C02HD
Symbol
Polarity
Min
Typ
Max
Unit
VSD
(N)
(P)
0.79
1.5
1.3
2.1
Vdc
trr
(N)
(P)
23
38
ns
(IS = 3.0 Adc, VAS = 0 Vdc,

dIS/dt = 100 A/s)
ta
(N)
(P)
18
17
(IS = 2.0 Adc, VAS = 0 Vdc,

dIS/dt = 100 A/s)
)
tb
(N)
(P)
5.0
21
QRR
(N)
(P)
0.025
0.034
Characteristic
Forward Voltage(2)


NChannel
PChannel
VGS = 10 V
4.5 V
5
3.9 V
TJ = 25C
3.5 V
3.3 V
3.7 V
4
3.1 V
3
2.9 V
2
2.7 V
VGS = 10 V 4.5 V
3.9 V
3.7 V
3.5 V
3.3 V
2
3.1 V
2.9 V
2.7 V
2.5 V
2.5 V
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0.2
0.6
0.8
1.2
1.4
4
VDS 10 V
4
TJ = 100C
25C
2
55C
2.2
2.6
3
1.4
1.8
1.8
VDS 10 V
1
25C
100C
1.6
6
0.4
TJ = 25C
3.4
0
1.0
TJ = 55C
1.5
2.0
2.5
3.0
3.5
4125
MMDF2C02HD
0.6
PChannel
ID = 1.5 A
TJ = 25C
0.4
0.2
5
6
7
8
3
4
2
10
NChannel
0.6
ID = 1 A
TJ = 25C
0.4
0.2
0.08
VGS = 4.5 V
0.07
10 V
0.06
0.05
2
3
4
TJ = 25C
VGS = 4.5 V
0.16
0.12
10 V
0.08
0.04
0
1.2
0.8
25
50
75
100
125

Temperature
4126
1.0
1.5
2.0
2.5
3.0
3.5
4.0

and Gate Voltage

(NORMALIZED)

(NORMALIZED)
VGS = 10 V
ID = 1.5 A
25
0.5
1.6
0.6
50
10
0.20

and Gate Voltage
1.4


TJ = 25C
150
1.6
VGS = 10 V
ID = 2 A
1.4
1.2
1.0
0.8
0.6
50
25
25
50
75
100
125
150

Temperature
MMDF2C02HD
NChannel
PChannel
100
1000
VGS = 0 V
TJ = 125C
100
I DSS, LEAKAGE (nA)
VGS = 0 V
100C
25C
10
8
12
16
20

TJ = 125C
10
100C
10
15
20


t = Q/IG(AV)
tf = Q2 x RG/VGSP
where

switching losses.
4127
MMDF2C02HD
NChannel
1200
TJ = 25C
Ciss
1000
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1200
VGS = 0 V
1000
800
Crss
600
Ciss
400
VGS = 0 V
VDS = 0 V
TJ = 25C
Ciss
800
600
Crss
Ciss
400
Coss
Coss
200
200
Crss
5
10
0
VGS
10
15
Crss
0
10
20
5
VGS
20
VGS
16
12
ID = 3 A
TJ = 25C
Q2
4
VDS
Q3
0
10
12
0
14
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
v DS , DRAINTOSOURCE VOLTAGE (VOLTS)
24
QT
Q1
12
18
QT
10
15
VGS
VDS
12
4 Q1
Q2
6
ID = 2 A
TJ = 25C
Q3
0
12
0
16
QT, TOTAL GATE CHARGE (nC)


100
1000
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25C
VDD = 10 V
ID = 3 A
VGS = 10 V
tr
TJ = 25C t
d(off)
t, TIME (ns)
t, TIME (ns)
20
15
12
10
VDS
VDS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VDS = 0 V
1400
PChannel
tf
td(on)
10
100
td(off)
tf
tr
1
1
4128
10
100
td(on)
10
1
10


100
MMDF2C02HD
these losses.
snappy.
NChannel
PChannel
2.0
3.0
2.5
VGS = 0 V
TJ = 25C
VGS = 0 V
TJ = 25C
2.0
1.5
1.0
0.5
0
0.50
0.55
0.60
0.65
0.70
0.75
0.80
1.6
1.2
0.8
0.4
0
0.5
0.7
0.9
1.1
1.3
1.5
4129
MMDF2C02HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
NChannel
PChannel
10
VGS = 20 V
SINGLE PULSE
TC = 25C
100

100
100 s
1 ms
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10

Safe Operating Area
4130
100
10
VGS = 20 V
SINGLE PULSE
TC = 25C

100 s
1 ms
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100

Safe Operating Area
MMDF2C02HD
NChannel
PChannel
350
ID = 9 A
400
EAS, SINGLE PULSE DRAINTOSOURCE


450
350
300
250
200
150
100
50
0
25
50
75
100
125
ID = 6 A
300
250
200
150
100
50
0
150
25
50
75
100
125
150



THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4131
MOTOROLA
Designer's
Data Sheet
MMDF2C03HD
Complementary TMOS

drain-to-source diode has a very low reverse recovery time.
applications are dc-dc converters, and power management in
voltage transients.
Battery Life
Miniature SO-8 Surface Mount Package Saves Board Space
Mounting Information for SO-8 Package Provided
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
30 VOLTS
RDS(on) = 0.070 OHM
(N-CHANNEL)
RDS(on) = 0.200 OHM
(P-CHANNEL)
D
NChannel

SO8
S
D
PChannel
NSource
NDrain
NGate
NDrain
PSource
PDrain
PGate
PDrain
Top View

Rating
Drain Current Continuous NChannel
PChannel
NChannel
PChannel
Symbol
Value
Unit
VDSS
VGS
30
Vdc
20
Vdc
4.1
3.0
21
15
ID
IDM

(VDD = 30 V, VGS = 5.0 V, Peak IL = 9.0 Apk, L = 8.0 mH, RG = 25 )
(VDD = 30 V, VGS = 5.0 V, Peak IL = 6.0 Apk, L = 18 mH, RG = 25 )
TJ, Tstg
PD
55 to 150
2.0
Watts
RJA
62.5
C/W
EAS
NChannel
PChannel
mJ
324
324
TL
260
DEVICE MARKING
D2C03
Device
MMDF2C03HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4132
MMDF2C03HD
Characteristic
Symbol
Polarity
Min
Typ
Max
30
Unit
OFF CHARACTERISTICS
V(BR)DSS
Vdc

IDSS
(N)
(P)
1.0
1.0
Adc
IGSS
100
nAdc

VGS(th)
(N)
(P)
1.0
1.0
1.7
1.5
3.0
2.0
Vdc
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
(N)
(P)
0.06
0.17
0.070
0.200
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
(N)
(P)
0.065
0.225
0.075
0.300
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
(N)
(P)
2.0
2.0
3.6
3.4
Ciss
(N)
(P)
450
397
630
550
Coss
(N)
(P)
160
189
225
250
Crss
(N)
(P)
35
64
70
126
(VDD = 15 Vdc, ID = 3.0

Adc,
VGS = 4.5 Vdc,
RG = 9.1 )
td(on)
(N)
(P)
12
16
24
32
tr
(N)
(P)
65
18
130
36
(VDD = 15 Vdc, ID = 2.0

Adc,
VGS = 4.5 Vdc,
RG = 6.0 )
td(off)
(N)
(P)
16
63
32
126
tf
(N)
(P)
19
194
38
390
(VDD = 15 Vdc, ID = 3.0

Adc,
VGS = 10 Vdc,
RG = 9.1 )
td(on)
(N)
(P)
8.0
9.0
16
18
tr
(N)
(P)
15
10
30
20
(VDD = 15 Vdc, ID = 2.0

Adc,
VGS = 10 Vdc,
RG = 6.0 )
td(off)
(N)
(P)
30
81
60
162
tf
(N)
(P)
23
192
46
384
QT
(N)
(P)
11.5
14.2
16
19
Ohm
Ohm
mhos
Input Capacitance
Output Capacitance
Vd VGS = 0
(VDS = 24 Vdc,
Vdc,
f = 1.0 MHz)
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
GateSource Charge
(VDS = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)
Q1
(N)
(P)
1.5
1.1
GateDrain Charge
(VDS = 24 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc))
Q2
(N)
(P)
3.5
4.5
Q3
(N)
(P)
2.8
3.5

ns
nC
(continued)
4133
MMDF2C03HD
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit

Forward Voltage(2)
VSD
(N)
(P)
0.82
1.82
1.2
2.0
Vdc
trr
(N)
(P)
24
42
ns
ta
(N)
(P)
17
16
tb
(N)
(P)
7.0
26
QRR
(N)
(P)
0.025
0.043
3.7 V 3.5 V
TJ = 25C
((IF = IS,
dIS/dt = 100 A/s)
Reverse Recovery Storage Charge

NChannel
VGS = 10 V
4.5 V
5
4.3 V
4.1 V
4
3.9 V
3.5 V
3.7 V
3.3 V
3.1 V
2
2.9 V
1
0
VGS = 10 V 4.5 V
TJ = 25C
PChannel
3.9 V
3.3 V
3.1 V
2.9 V
1
2.7 V
2.7 V
2.5 V
0
0.2
0.6
0.4
0.8
1.2
2.5 V
1.6
1.4
1.8
0.8
1.2
1.4
1.6
1.8
0.6
VDS 10 V
4
TJ = 100C
3
25C
VDS 10 V
2
TJ = 100C
25C
1
55C
4134
0.4
0.2
55C
2
2.5
3.5
0
1.5
1.7
1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3

3.5
3.7
MMDF2C03HD
PChannel
0.6
ID = 1.5 A
TJ = 25C
0.5
0.4
0.3
0.2
0.1
0
2
4
5
6
7
8
9
10
NChannel
0.6
ID = 1 A
TJ = 25C
0.5
0.4
0.3
0.2
0.1
0
2
3
4
5
6
7
8
10
3.5
0.08
TJ = 25C
0.07
VGS = 4.5
0.06
10 V
0.05

0.30
TJ = 25C
0.25
VGS = 4.5 V
0.20
10 V
0.15
0.10
2.5
3
1.5
2

and Gate Voltage

and Gate Voltage
0.5
1.5
2.5
2.0
(NORMALIZED)

VGS = 10 V
ID = 1.5 A
1.5
1.0
0.5
0
50
25
25
50
75
100
125
150

Temperature
0.5
1.6
VGS = 10 V
ID = 2 A
1.4
1.2
1.0
0.8
0.6
50
25
25
50
75
100
125
150

Temperature
4135
MMDF2C03HD
NChannel
PChannel
1000
100
VGS = 0 V
TJ = 125C
10
VGS = 0 V
100C
10
15
20
25
30
TJ = 125C
100
100C
10
5
10
15
20
25


30

t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
4136

switching losses.
MMDF2C03HD
NChannel
1200
PChannel
1200
VDS = 0 V VGS = 0 V
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
800
Crss
Ciss
400
800
600 Crss
Ciss
400
Coss
Coss
200
200
Crss
Crss
0
10
5
VGS
10
15
20
10
15
20
30
25
VDS
18
VGS
VDS
6
12
Q1
Q2
6
Q3
ID = 3 A
TJ = 25C
2
10
0
12
12
24
QT
20
10
VGS
16
VDS
8
6
Q1
12
ID = 2 A
TJ = 25C
Q2
2
Q3
0
10
12
14
0
16


1000
t, TIME (ns)
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25C
100
td(off)
tr
tf
td(on)
10
24
1000
t, TIME (ns)
QT
5
VGS
VDS
12
0
10
30
25
TJ = 25C
C
1000 iss
1000
600
VDS = 0 V VGS = 0 V
TJ = 25C
VDD = 15 V
ID = 2 A
VGS = 10 V
TJ = 25C
100
tf
td(off)
tr
td(on)
10
1
1
10
100

10
100

4137
MMDF2C03HD
these losses.
snappy.
NChannel
PChannel
3.0
2
TJ = 25C
VGS = 0 V
IS, SOURCE CURRENT (AMPS)
2.5
2.0
1.5
1.0
0.5
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
1.6
TJ = 25C
VGS = 0 V
1.2
0.8
0.4
0
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
4138
MMDF2C03HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
NChannel
PChannel
10
100
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100 s
100
1 ms
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
100

Safe Operating Area
10
VGS = 20 V
SINGLE PULSE
TC = 25C

100 s
1 ms
10 ms
1
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100

Safe Operating Area
4139
MMDF2C03HD
NChannel
PChannel
350
ID = 9 A


350
300
250
200
150
100
50
0
25
50
75
100
125
250
200
150
100
50
0
150
ID = 6 A
300
25
50
75
100
125
150



THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4140
MOTOROLA
Designer's
Data Sheet
MMDF2N02E
TMOS Dual N-Channel


DUAL TMOS MOSFET

3.6 AMPERES
25 VOLTS
RDS(on) = 0.1 OHM
G
SO8
IDSS Specified at Elevated Temperatures
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Rating
Symbol
Value
Unit
VDSS
VGS
25
Vdc
20
Vdc
Adc
Drain Current Continuous @ TA = 25C

Drain Current Single Pulse (tp 10 s)
Total Power Dissipation @ TA = 25C (1)
ID
ID
IDM
PD
3.6
2.5
18
2.0
TJ, Tstg
EAS
55 to 150

(VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 6.0 mH, RG = 25 )
Thermal Resistance, Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 0.0625 from case for 10 seconds
Apk
mJ
245
RJA
62.5
C/W
TL
260
DEVICE MARKING
F2N02
Device
MMDF2N02ER2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500
REV 4
4141
MMDF2N02E
Characteristic
Symbol
Min
Typ
Max
Unit
25
1.0
10
100
1.0
2.0
3.0
0.083
0.110
0.100
0.200
gFS
1.0
2.6
Mhos
Ciss
380
532
pF
Coss
235
329
Crss
55
110
td(on)
7.0
21
tr
17
30
td(off)
27
48
tf
18
30
td(on)
10
30
tr
35
70
td(off)
19
38
tf
25
50
QT
10.6
30
Q1
1.3
Q2
2.9
Q3
2.7
VSD
1.0
1.4
Vdc
trr
34
66
ns
ta
17
tb
17
QRR
0.03
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
(VDS = VGS, ID = 250 Adc
VGS(th)

(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
Vdc
Ohm
Input Capacitance
Output Capacitance
(VDS = 16 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS

Forward OnVoltage(1)
See Fig
Figure
re 11
((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ns
nC

4142
MMDF2N02E
7
VGS = 10 V
4.5 V
4.3 V
4.1 V
6
5
3.7 V
3.5 V
3.9 V
3.3 V
4
3.1 V
3
2.9 V
2
2.7 V
2.5 V
1
0
5
4
100C
3
25C
2
1
TJ = 25C
0
VDS 10 V
TJ = 25C
0.5
0.25
0.75
1.5
1
1.25
1.75
TJ = 55C
0
1.5
0.6
ID = 3.5 A
TJ = 25C
0.4
0.3
0.2
0.1
0
2
4
5
6
7
8
9
10
3.5
TJ = 25C
VGS = 4.5
0.1
10 V
0.05
0
0

and Gate Voltage
2.0
10000
VGS = 10 V
ID = 3.5 A
VGS = 0 V
1.5
0.15

1.0
0.5
0
50
2.5

0.5
25
25
50
75
100
125
150
TJ = 125C
1000
100C
100
25C
10
10
15
25
20

Temperature

versus Voltage
4143
MMDF2N02E
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1200
VDS = 0 V
C, CAPACITANCE (pF)
1000
VGS = 0 V
TJ = 25C
Ciss
800
Crss
600
Ciss
400
Coss
200
Crss
0
10
10
15
20


12
QT
8
Q1
4
Q3
0
4
6
8
10
0
12
7
6
td(off)
tf
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25C
tr
t, TIME (ns)
ID = 2.3 A
TJ = 25C
Figure 8. GatetoSource and

DraintoSource Voltage versus Total Charge
100
10
td(on)
10
Figure 9. Resistive Switching Time Variation

4144
Q2
12
VGS
VDS
VGS
VDS
25
16

100
TJ = 25C
VGS = 0 V
5
4
3
2
1
0
0.5
0.6
0.7
0.8
0.9
1
1.1
Figure 10. Diode Forward Voltage

versus Current
MMDF2N02E
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
VGS = 20 V
SINGLE PULSE
TC = 25C
10
280

100 s

100
10 s
10 ms
1
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
I pk = 9 A
240
200
160
120
80
40
0
100

Safe Operating Area
25
50
75
100
150
125

4145
MMDF2N02E

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4146
MOTOROLA
Designer's
Data Sheet
MMDF2P01HD
TMOS P-Channel

DUAL TMOS POWER FET

2.0 AMPERES
12 VOLTS
RDS(on) = 0.18 OHM

SO8
S
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Rating
Symbol
Value
Unit
VDSS
VDGR
12
Vdc
12
Vdc
VGS
ID
ID
IDM
8.0
Vdc
3.4
2.1
17
Adc
PD
2.0
Watts
55 to 150

Apk
C
RJA
62.5
C/W
TL
260
DEVICE MARKING
D2P01
(1) Negative sign for PChannel device omitted for clarity.
Device
MMDF2P01HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4147
MMDF2P01HD
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)(1)
Symbol
Characteristic
Min
Typ
Max
Unit
12
17
1.0
10
100
0.7
1.0
3.0
1.1
0.16
0.2
0.180
0.220
gFS
3.0
4.75
mhos
Ciss
530
740
pF
Coss
410
570
Crss
177
250
td(on)
21
45
tr
156
315
td(off)
38
75
tf
68
135
td(on)
16
35
tr
44
90
td(off)
68
135
tf
54
110
QT
9.3
13
Q1
0.8
Q2
4.0
Q3
3.0
1.69
1.2
2.0
trr
48
ta
23
tb
25
QRR
0.05
OFF CHARACTERISTICS
V(BR)DSS

IDSS
GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0)
IGSS
Vdc
mV/C
Adc
nAdc
Temperature Coefficient (Negative)
VGS(th)

(VGS = 4.5 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 1.0 Adc)
RDS(on)
Vdc
mV/C
Ohm
Input Capacitance
Output Capacitance
(VDS = 10 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 6.0 Vdc, ID = 2.0 Adc,

VGS = 2.7
2 7 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 6.0 )
Fall Time
Gate Charge
((VDS = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)
((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
ns
nC
Vdc
ns

4148
MMDF2P01HD
4
VGS = 8 V
4.5 V
3.1 V
2.5 V
VDS 10 V
TJ = 25C
2.3 V
2.7 V
2.1 V
2
1.9 V
1
2
100C
25C
TJ = 55C
1.7 V
1.5 V
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
1.4
1.6
1.8
2.2
2.4
TJ = 25C
ID = 1 A
0.20
0.15
2
4
6
2.6
2.8
0.30
TJ = 25C
0.25
VGS = 2.7 V
0.20
4.5 V
0.15
0.10


(NORMALIZED)
1.2
0.25
0.1
0.35
0.30
0.8
1.6
2.4
3.2

and Gate Voltage
1000
VGS = 0 V
VGS = 4.5 V
ID = 2 A
1.5
0.5
0
50
25
25
50
75
100
125
150
TJ = 125C
100
10
4
8

Temperature

12
4149
MMDF2P01HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2000
VDS = 0 V
TJ = 25C
Ciss
1600
C, CAPACITANCE (pF)
VGS = 0 V
1200
Crss
800
Ciss
400
0
Coss
Crss
8
4
VGS
12
VDS
4150
10
QT
8
VGS
VDS
3
2 Q1
ID = 2 A
TJ = 25C
Q2
2
Q3
0
10
1000
VDD = 6 V
ID = 2 A
VGS = 4.5 V
TJ = 25C
t, TIME (ns)
MMDF2P01HD
100
td(off)
tf
tr
td(on)
10
1
10


100

snappy.

these losses.
2
VGS = 0 V
TJ = 25C
1.5
0.5
0
0.4
0.6
0.8
1.2
1.4
1.6
1.8
4151
MMDF2P01HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

100
10
VGS = 8 V
SINGLE PULSE
TC = 25C

(TJ(MAX) TC)/(RJC).

1 ms
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100

Safe Operating Area
4152
MMDF2P01HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4153
MOTOROLA

Designer's
Data Sheet
MMDF2P02E
TMOS Dual P-Channel


G
Diode Exhibits High Speed, with Soft Recovery
IDSS Specified at Elevated Temperatures
DUAL TMOS MOSFET

2.5 AMPERES
25 VOLTS
RDS(on) = 0.250 OHM
D
SO8
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Rating
Symbol
Value
Unit
VDSS
VGS
25
Vdc
20
Vdc

Derate above 25C
ID
ID
IDM
PD
2.5
1.7
13
Adc
2.0
16
W
mW/C
TJ, Tstg
EAS
55 to 150

(VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 7.0 Apk, L = 10 mH, RG = 25 )
Thermal Resistance, Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 0.0625 from case for 10 seconds
Apk
C
mJ
245
RJA
62.5
C/W
TL
260
DEVICE MARKING
F2P02
Device
MMDF2P02ER2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500
REV 4
4154
MMDF2P02E
Characteristic
Symbol
Min
Typ
Max
Unit
25
2.2
1.0
10
100
1.0
2.0
3.8
3.0
0.19
0.3
0.25
0.4
gFS
1.0
2.8
Mhos
Ciss
340
475
pF
Coss
220
300
Crss
75
150
td(on)
20
40
tr
40
80
td(off)
53
106
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
Vdc
Ohm
Input Capacitance
Output Capacitance
(VDS = 16 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 5.0
5 0 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.0 )
Fall Time
Gate Charge
((VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)

See Fig
Figure
re 11
((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ns
tf
41
82
td(on)
13
26
tr
29
58
td(off)
30
60
tf
28
56
QT
10
15
Q1
1.0
Q2
3.5
Q3
3.0
VSD
1.5
2.0
Vdc
trr
32
64
ns
ta
19
tb
12
QRR
0.035
nC

4155
MMDF2P02E
4
4.5 V
3
4.3 V
2
4.1 V
3.9 V
3.7 V
3.5 V
3.3 V
0
VDS 10 V
TJ = 25C
4.7 V
5V
VGS = 10 7 V
0.4
0.8
1.2
1.6
3
100C
2
25C
TJ = 55C
1
0
2.5
ID = 1 A
TJ = 25C
0.4
0.3
0.2
0.1
0
3
10
0.6
0.5
4.5

0.6
TJ = 25C
0.5
0.4
VGS = 4.5
0.3
0.2
10 V
0.1
0
0.5
1.5


and Gate Voltage
2.0
100
VGS = 10 V
ID = 2 A
VGS = 0 V
1.5
3
3.5
4
1.0
0.5
0
50
4156
25
25
50
75
100
125
150
TJ = 125C
10
100C
12
16

Temperature

versus Voltage
20
MMDF2P02E
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1000
VDS = 0 V
TJ = 25C
Ciss
800
C, CAPACITANCE (pF)
VGS = 0 V
600
Crss
400
Ciss
Coss
200
Crss
0
10

12
QT
9
4
6
8
0
12
10
2
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25C
TJ = 25C
VGS = 0 V
t, TIME (ns)
ID = 2 A
TJ = 25C

100
td(off)
tr
tf
td(on)
1
Q3
Q2
Q1
10
12
VGS
VDS
30
5
0
5
10
15
20
25
VGS
VDS
16


10
100

1.6
1.2
0.8
0.4
0
0.6
0.8
1
1.2
1.4
1.6

versus Current
4157
MMDF2P02E
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
10
VGS = 20 V
SINGLE PULSE
TC = 25C
280

100 s

100
10 s
10 ms
1
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10

Safe Operating Area
4158
I pk = 7 A
240
200
160
120
80
40
0
100
25
50
75
100
125
150

MMDF2P02E

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4159
MOTOROLA
Designer's
Data Sheet
MMDF2P02HD
TMOS P-Channel
DUAL TMOS POWER FET

2.0 AMPERES
20 VOLTS
RDS(on) = 0.160 OHM

voltage transients.
D
SO8
G
S
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Rating
(VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 6.0 Apk, L = 18 mH, RG = 25 )
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
20
Vdc
3.3
2.1
20
Adc
Apk
PD
TJ, Tstg
EAS
2.0
Watts
55 to 150
324
mJ
RJA
62.5
C/W
TL
260
DEVICE MARKING
D2P02
Device
MMDF2P02HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4160
MMDF2P02HD
Symbol
Characteristic
Min
Typ
Max
Unit
20
25
1.0
10
100
1.0
1.5
4.0
2.0
0.118
0.152
0.160
0.180
gFS
2.0
3.0
mhos
Ciss
420
588
pF
Coss
290
406
Crss
116
232
td(on)
19
38
tr
66
132
td(off)
25
50
tf
37
74
td(on)
11
22
tr
21
42
td(off)
45
90
tf
36
72
QT
15
20
Q1
1.2
Q2
5.0
Q3
4.0
1.5
1.24
2.1
trr
38
ta
17
tb
21
QRR
0.034
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
Vdc
mV/C
Ohm
Input Capacitance
Output Capacitance
(VDS = 16 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDS = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.0 )
Fall Time
Gate Charge
((VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)
(VDD = 15 V, IS = 2.0 A,
dIS/dt = 100 A/s)
VSD
ns
nC
Vdc
ns

4161
MMDF2P02HD
VGS = 10 V 4.5 V
3.9 V
TJ = 25C
3.7 V
3.5 V
3.3 V
2
3.1 V
2.9 V
VDS 10 V
0
0
0.2
0.4
0.6 0.8
1
1.2 1.4 1.6 1.8
TJ = 55C
0
1.0
1.5
0
4
10
0.2
3.5
0.20
TJ = 25C
VGS = 4.5 V
0.16
0.12
10 V
0.08
0.04
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0


and Gate Voltage
100
1.6
VGS = 0 V
VGS = 10 V
ID = 2 A
TJ = 125C
1.4
I DSS, LEAKAGE (nA)

(NORMALIZED)
0.4
3.0
ID = 1 A
TJ = 25C
2.5
2.0
0.6
25C
100C
2.7 V
2.5 V
1.2
1.0
10
100C
0.8
0.6
50
4162
25
25
50
75
100
125
150
10
15

Temperature
Figure 6. DrainToSource Leakage Current

versus Voltage
20
MMDF2P02HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1200
C, CAPACITANCE (pF)
1000
VGS = 0 V
VDS = 0 V
TJ = 25C
Ciss
800
600
Crss
Ciss
400
Coss
200
0
10
Crss
5
0
VGS
10
15
20
VDS
4163
18
QT
10
15
VGS
12
4 Q1
Q2
6
ID = 2 A
TJ = 25C
2
Q3
0
VDS
4
3
0
16
12
1000
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
MMDF2P02HD
100
td(off)
tf
tr
td(on)
10
1
10
100



these losses.
snappy.
2.0
VGS = 0 V
TJ = 25C
1.6
1.2
0.8
0.4
0
0.5
0.7
0.9
1.1
1.3
1.5
4164
MMDF2P02HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
10
VGS = 20 V
SINGLE PULSE
TC = 25C
350


100
100 s
1 ms
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100

Safe Operating Area
ID = 6 A
300
250
200
150
100
50
0
25
50
75
100
125
150

4165
MMDF2P02HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.5776 0.7086
0.0154 F
0.0854 F
0.3074 F
1.7891 F
0.01
0.01
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4166
MOTOROLA

Designer's
Data Sheet
MMDF2P03HD
TMOS Dual P-Channel


voltage transients.
DUAL TMOS
POWER MOSFET
2.0 AMPERES
30 VOLTS
RDS(on) = 0.200 OHM
D
SO8
G
S
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Rating
Symbol
Value
Unit
VDSS
VDGR
VGS
30
Vdc
30
Vdc
20
Vdc

Total Power Dissipation @ TC = 25C (2)
ID
ID
IDM
PD
3.0
1.9
15
Adc
2.0
Watts
TJ, Tstg
55 to 150
EAS
324
mJ
RJA
62.5
C/W
TL
260

(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 18 mH, RG = 25 )
Apk
DEVICE MARKING
D2P03
Device
MMDF2P03HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 5
4167
MMDF2P03HD
Symbol
Characteristic
Min
Typ
Max
Unit
30
27
1.0
10
100
1.0
1.5
4.0
2.0
0.170
0.225
0.200
0.300
gFS
2.0
3.4
mhos
Ciss
397
550
pF
Coss
189
250
Crss
64
126
td(on)
16.25
33
tr
17.5
35
td(off)
62.5
125
tf
194
390
td(on)
9.0
18
tr
10
20
td(off)
81
162
tf
192
384
QT
14.2
19
Q1
1.1
Q2
4.5
Q3
3.5
VSD
1.82
1.36
2.0
Vdc
trr
42.3
ns
ta
15.6
tb
26.7
QRR
0.044
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
Vdc
mV/C
Ohm
Input Capacitance
Output Capacitance
(VDS = 24 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 2.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.0 )
Fall Time
Gate Charge
S Fi
See
Figure 8
((VDS = 24 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)
S Figure
See
Fi
15
((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ns
nC

4168
MMDF2P03HD
4
3.7 V
TJ = 25C
3.5 V
VGS = 10 V 4.5 V
3.3 V
3.9 V
2
3.1 V
2.9 V
1
2.7 V
VDS 10 V
2
TJ = 100C
25C
1
55C
2.5 V
0
0.6
0.2
0.4
0.6
0.8
1.2
1.4
1.6
2.5
2.7
2.9
3.1
3.3
0.1
3
4
5
6
7
8
10
3.5
3.7
0.30
TJ = 25C
0.25
VGS = 4.5 V
0.20
10 V
0.15
0.10

0.5
2.5
3
1.5
2
3.5

and Gate Voltage
1.6
1000
VGS = 10 V
ID = 2 A
VGS = 0 V
1.4

(NORMALIZED)
2.3
0.2
2.1
0.3
1.9
0.4
1.7
ID = 1 A
TJ = 25C
0.5
0
1.5
1.8
1.2
1.0
TJ = 125C
100
100C
0.8
0.6
50
25
25
50
75
100
125

Temperature
150
10
10
20
30

4169
MMDF2P03HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1200
C, CAPACITANCE (pF)
1000
VDS = 0 V VGS = 0 V
TJ = 25C
Ciss
800
600 Crss
Ciss
400
Coss
200
0
10
Crss
5
VGS
10
15
20
25
30
VDS
4170
24
QT
20
10
VGS
8
16
VDS
6
Q1
12
ID = 2 A
TJ = 25C
Q2
2
Q3
0
10
12
0
16
14
1000
t, TIME (ns)
12
MMDF2P03HD
VDD = 15 V
ID = 2 A
VGS = 10 V
TJ = 25C
100
tf
td(off)
tr
td(on)
10
1
1
10


100

snappy.

these losses.
1.6
TJ = 25C
VGS = 0 V
1.2
0.8
0.4
0
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
4171
MMDF2P03HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
10
VGS = 20 V
SINGLE PULSE
TC = 25C
350


100
100 s
1 ms
10 ms
1
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10

Safe Operating Area
100
ID = 6 A
300
250
200
150
100
50
0
4172
25
50
75
100
125
150

MMDF2P03HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4173
MOTOROLA
Designer's
Data Sheet
MMDF3N02HD
TMOS Dual N-Channel

DUAL TMOS
POWER MOSFET
3.0 AMPERES
20 VOLTS
RDS(on) = 0.090 OHM

voltage transients.
D
SO8
G
S
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Rating
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
PD
20
Vdc
3.8
2.6
19
Adc
2.0
Watts
TJ, Tstg
EAS
55 to 150
405
mJ
RJA
62.5
C/W
TL
260
Apk
DEVICE MARKING
D3N02
Device
MMDF3N02HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500
REV 4
4174
MMDF3N02HD
Characteristic
Symbol
Min
Typ
Max
Unit
20
29
1.0
10
100
1.0
1.5
4.0
2.0
0.058
0.074
0.090
0.100
gFS
2.0
3.88
Mhos
Ciss
455
630
pF
Coss
184
250
Crss
45
90
td(on)
11
22
tr
58
116
td(off)
17
35
tf
20
40
td(on)
7.0
21
tr
32
64
td(off)
27
54
tf
21
42
QT
12.5
18
Q1
1.3
Q2
2.8
Q3
2.4
VSD
0.79
0.72
1.3
Vdc
trr
23
ns
ta
18
tb
5.0
QRR
0.025
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
Vdc
mV/C
Ohms
Input Capacitance
Output Capacitance
(VDS = 16 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.0 )
Fall Time
Gate Charge
S Fi
See
Figure 8
((VDS = 16 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125C)
S Figure
See
Fi
15
((IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ns
nC

4175
MMDF3N02HD
VGS = 10 V
4.5 V
5
3.9 V
TJ = 25C
3.5 V
VDS 10 V
3.3 V
3.7 V
4
3.1 V
3
2.9 V
2
2.7 V
4
TJ = 100C
25C
2
55C
1
2.5 V
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0.4
0.2
5
6
7
8
3
4
2
10
ID = 1.5 A
TJ = 25C
TJ = 25C
3.4
VGS = 4.5 V
0.07
10 V
0.06
0.05
2
3
4

and Gate Voltage
1.6
1000
VGS = 0 V
VGS = 10 V
ID = 1.5 A

(NORMALIZED)
2.6
0.08

1.4
2.2
0.6
1.8
1.4
1.2
TJ = 125C
100
100C
25C
10
0.8
0.6
50
4176
25
25
50
75
100
125
150
4
8
12
16

Temperature

20
MMDF3N02HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1400
C, CAPACITANCE (pF)
1200
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
1000
800
600
Crss
Ciss
400
Coss
200
10
Crss
5
0
VGS
10
15
20
VDS
4177
24
QT
10
20
VGS
16
12
ID = 3 A
TJ = 25C
Q1
Q2
8
4
2
VDS
Q3
0
10
12
0
14
100
t, TIME (ns)
12
v DS , DRAINTOSOURCE VOLTAGE (VOLTS)
MMDF3N02HD
VDD = 10 V
ID = 3 A
VGS = 10 V
tr
TJ = 25C t
d(off)
tf
td(on)
10
1
1
10


100

these losses.
snappy.
2.5
VGS = 0 V
TJ = 25C
2
1.5
1
0.5
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
4178
MMDF3N02HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
10
VGS = 20 V
SINGLE PULSE
TC = 25C
450


100
100 s
1 ms
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
400
ID = 9 A
350
300
250
200
150
100
50
0
25
50
75
100
125
150

Safe Operating Area

4179
MMDF3N02HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4180
MOTOROLA
Designer's
Data Sheet
MMDF3N03HD
TMOS Dual N-Channel


voltage transients.
DUAL TMOS
POWER MOSFET
4.1 AMPERES
30 VOLTS
RDS(on) = 0.070 OHM

SO8
S
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Rating
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 8.0 mH, RG = 25 )
Symbol
Value
Unit
VDSS
VDGR
30
Vdc
30
Vdc
VGS
ID
ID
IDM
PD
20
Vdc
4.1
3.0
40
Adc
2.0
Watts
TJ, Tstg
EAS
55 to 150
324
mJ
RJA
62.5
C/W
TL
260
Apk
DEVICE MARKING
D3N03
Device
Reel Size
Tape Width
Quantity
MMDF3N03HDR2
13
12 mm embossed tape
2500 units
(1) When mounted on 2 square FR4 board (1 square 2 oz. Cu 0.06 thick single sided) with one die operating, 10s max.
REV 5
4181
MMDF3N03HD
Characteristic
Symbol
Min
Typ
Max
30
34.5
1.0
10
100
1.0
1.7
3.0
Unit
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
Vdc
mV/C
(VDS = 3.0 Vdc, ID = 1.5 Adc)
Ohms
0.06
0.065
0.07
0.075
2.0
3.6
Ciss
450
630
Coss
160
225
Crss
35
70
td(on)
12
24
tr
65
130
td(off)
16
32
tf
19
38
td(on)
16
tr
15
30
td(off)
30
60
tf
23
46
QT
11.5
16
Q1
1.5
Q2
3.5
Q3
2.8
0.82
0.7
1.2
trr
24
ta
17
tb
QRR
0.025
gFS
Mhos
Input Capacitance
Output Capacitance
(VDS = 24 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 4
4.5
5 Vdc,
Vdc
RG = 9.1 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125C)
See Figure
Fig re 12
(IS = 3
3.0
0 Ad
Adc, VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s)
VSD
ns
ns
nC
Vdc
ns

4182
MMDF3N03HD
VGS = 10 V
4.5 V
5
4.3 V
4.1 V
4
3.9 V
VDS 10 V
TJ = 25C
3.7 V
3.3 V
3.1 V
2
2.9 V
1
0
3.5 V
0.2
0.6
0.4
0.8
1.2
1.6
1.4
4
100C
3
25C
1.8
TJ = 55C
3.5
ID = 1.5 A
TJ = 25C
0.5
0.4
0.3
0.2
0.1
0
3
4
5
6
7
8
9
10
0.08
TJ = 25C
0.07
VGS = 4.5
0.06
10 V
0.05
0
0.5
1.5
2.5


and Gate Voltage
100
2.0
VGS = 10 V
ID = 1.5 A
VGS = 0 V
1.5
2.5
0.6
2.7 V
2.5 V
1.0
TJ = 125C
10
100C
0.5
0
50
25
25
50
75
100
125
150
10
15
20
25
30

with Temperature

versus Voltage
4183
MMDF3N03HD
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where


these losses.
snappy.
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME

4184
MMDF3N03HD
SAFE OPERATING AREA
VDS = 0 V VGS = 0 V
Ciss
TJ = 25C
C, CAPACITANCE (pF)
1000
800
600
Crss
Ciss
400
Coss
200
Crss
12
5
5
30
0
10
15
20
25
VGS
VDS
6
Q3
3.0
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25C
2.5
t, TIME (ns)
td(off)
tr
tf
td(on)
10
Q2
ID = 3 A
TJ = 25C
2
4
6
8
10
0
12

1000
10
12
Q1
100
18
VGS
VDS
0
10
24
QT
1200

(TJ(MAX) TC)/(RJC).
100

TJ = 25C
VGS = 0 V
2.0
1.5
1.0
0.5
0
0.5
0.6
0.65
0.7
0.75
0.8
0.55
0.85

versus Current
4185
MMDF3N03HD
350
VGS = 20 V
SINGLE PULSE
TC = 25C
10
10 s
100 s
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.01
0.1

ID = 9 A

100
10
300
250
200
150
100
50
0
100
25
50
75
100
125
150

Safe Operating Area


THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4186
MOTOROLA
Designer's
Data Sheet
MMDF4N01HD
TMOS Dual N-Channel


DUAL TMOS
POWER MOSFET
4.0 AMPERES
20 VOLTS
RDS(on) = 0.045 OHM
D
SO8
G
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VDGR
20
Vdc
VGS
8.0
Vdc

ID
ID
IDM
5.2
4.1
48
Adc
PD
2.0
Watts
TJ, Tstg
55 to 150
RJA
62.5
C/W
TL
260

Apk
DEVICE MARKING
D4N01
Device
MMSF4N01HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4187
MMDF4N01HD
Characteristic
Symbol
Min
Typ
Max
Unit
20
2.0
1.0
10
100
0.6
0.8
2.8
1.1
0.035
0.043
0.045
0.055
gFS
3.0
6.0
mhos
Ciss
425
595
pF
Coss
270
378
Crss
115
230
td(on)
13
26
tr
60
120
td(off)
20
40
tf
29
58
td(on)
10
20
tr
42
84
td(off)
24
48
tf
28
56
QT
9.2
13
Q1
1.3
Q2
3.5
Q3
3.0
0.95
0.78
1.1
trr
38
ta
17
tb
22
QRR
0.028
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
(VDS = VGS, ID = 0.25 mAdc)
VGS(th)

(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
RDS(on)
Vdc
mV/C
Ohm
Input Capacitance
Output Capacitance
(VDS = 10 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2.7
2 7 Vdc,
Vdc
RG = 2.3 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 2.3 )
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)

(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125C)
((IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
ns
nC
Vdc
ns

4188
MMDF4N01HD
8
VDS 10 V
TJ = 25C
2.3 V
2.5 V
VGS = 8 V
4.5 V
3.1 V
6 2.7 V
2.1 V
1.9 V
1.7 V
100C
25C
TJ = 55C
1.5 V
1.3 V
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
1.6
1.4
1.8
TJ = 25C
ID = 2 A
0.06
0.05
0.04
6
2
4
2.2
0.050
TJ = 25C
VGS = 2.7 V
0.045
0.040
4.5 V
0.035
0.030


(NORMALIZED)
1.2
0.07
0.03
4
6

and Gate Voltage
100
VGS = 0 V
VGS = 4.5 V
ID = 4 A
TJ = 125C
1.5
0.5
0
50
25
25
50
75
100
125
150
10
100C
2
4
8
10
6

Temperature

12
4189
MMDF4N01HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2000
VDS = 0 V
C, CAPACITANCE (pF)
1600
VGS = 0 V
TJ = 25C
Ciss
1200
Crss
800
Ciss
Coss
400
Crss
0
4
VGS
12
VDS
4190
10
QT
4
8
VGS
VDS
3
6
Q1
Q2
ID = 4 A
TJ = 25C
2
Q3
0
10
100
VDD = 6 V
ID = 4 A
VGS = 4.5 V
TJ = 25C
t, TIME (ns)
MMDF4N01HD
tr
tf
td(off)
td(on)
10
1
0.1
10


100

snappy.

these losses.
4
VV
GS
GS= =0 0VV
TJTJ= =25C
25C
3
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
4191
MMDF4N01HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).

100
10
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100 s
1 ms
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
100

Safe Operating Area
4192
MMDF4N01HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0175
0.0710
0.2706
0.0154 F
0.0854 F
0.3074 F
0.5776
0.7086
0.01
0.01
1.7891 F
107.55 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4193
MOTOROLA
Product Preview
MMDF4N01Z
TMOS Dual N-Channel with

Monolithic Zener ESD
Protected Gate
EZFETs are an advanced series of power MOSFETs which

utilize Motorolas High Cell Density TMOS process and contain
monolithic backtoback zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and
true logic level performance. They are capable of withstanding
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important.
Typical applications are dcdc converters, and power manageG
ment in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as
disk drives and tape drives.
Zener Protected Gates Provide Electrostatic Discharge Protection
DUAL TMOS
POWER MOSFET
4.0 AMPERES
20 VOLTS
RDS(on) = 0.045 OHM

SO8
S
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Rating
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
PD
8.0
Vdc
4.5
4.0
23
Adc
2.0
16
Watts
mW/C
PD
1.39
11.11
Watts
mW/C
TJ, Tstg
55 to 150
Typ.
Max.
Unit
62.5
90
C/W
Drain Current Continuous @ TA = 25C (1)
Drain Current Pulsed Drain Current (3)
Linear Derating Factor (1)
Apk
THERMAL RESISTANCE
Rating
Symbol
Junction to Ambient, PCB Mount (1)

RJA
RJA
(1) When mounted on 1 inch square FR4 or G10 board (VGS = 4.5 V, @ 10 Seconds)
(2) When mounted on minimum recommended FR4 or G10 board (VGS = 4.5 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.
Thermal Resistance
DEVICE MARKING
D4N01Z
Device
MMDF4N01ZR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
This document contains information on a new product. Specifications and information are subject to change without notice.
REV 1
4194
MMDF4N01Z
Characteristic
Symbol
Min
Typ
Max
20
15
2.0
10
5.0
0.7
0.83
3.0
1.1
35
45
45
55
5.0
8.5
Ciss
450
630
Coss
160
225
Crss
330
460
td(on)
28
40
tr
128
180
td(off)
194
270
tf
195
270
td(on)
50
70
tr
340
475
td(off)
106
150
tf
197
275
QT
10.5
15
Q1
0.8
Q2
4.4
Q3
3.0
0.84
0.65
1.2
trr
250
ta
88
tb
162
QRR
1.0
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
(Cpk 2.0) (3)

(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
(Cpk 2.0) (3)
(VDS = 2.5 Vdc, ID = 2.0 Adc)
VGS(th)
Vdc
RDS(on)
mV/C
m
gFS
Mhos
Input Capacitance
Output Capacitance
(VDS = 10 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDS = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4
4.5
5 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2
2.7
7 Vdc,
Vdc
RG = 6.0 )
Fall Time
Gate Charge
(see fig
figure
re 8)
((VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)

(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125C)
(IS = 4
4.0
0 Ad
Adc, VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s)
VSD
ns
ns
nC
Vdc
ns

(3) Reflects typical values.
Max limit Typ
Cpk =
3 x SIGMA
4195
MOTOROLA
Medium Power Field Effect Transistor

NChannel Enhancement Mode
Silicon Gate TMOS EFETt
MMFT1N10E
SOT223 for Surface Mount
This advanced EFET is a TMOS Medium Power MOSFET

designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a
draintosource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
dcdc converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT223 package which is designed for medium
power surface mount applications.
MEDIUM POWER
TMOS FET
1 AMP
100 VOLTS
RDS(on) = 0.25 OHM
2,4
D
4
1
Silicon Gate for Fast Switching Speeds

Low RDS(on) 0.25 max
The SOT223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.
2
3
1
G
S
CASE 318E04, STYLE 3

TO261AA
MAXIMUM RATINGS (TA = 25C unless otherwise noted)

Symbol
Rating
Value
Unit
VDS
100
VGS
20

ID
IDM
1
4
Adc
PD(1)
0.8
6.4
Watts
mW/C
TJ, Tstg
65 to 150
EAS
168
mJ
RJA
156
C/W
TL
260
10
C
Sec

Derate above 25C
(VDD = 60 V, VGS = 10 V, Peak IL= 1 A, L = 0.2 mH, RG = 25 )
Vdc
DEVICE MARKING
1N10
Thermal Resistance JunctiontoAmbient (surface mounted)
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
(1) Power rating when mounted on FR4 glass epoxy printed circuit board using recommended footprint.
REV 3
4196
MMFT1N10E
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
100
Vdc
Zero Gate Voltage Drain Current, (VDS = 100 V, VGS = 0)
IDSS
10
Adc
GateBody Leakage Current, (VGS = 20 V, VDS = 0)
IGSS
100
nAdc
Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)
VGS(th)
4.5
Vdc
Static DraintoSource OnResistance, (VGS = 10 V, ID = 0.5 A)
RDS(on)
0.25
Ohms
DraintoSource OnVoltage, (VGS = 10 V, ID = 1 A)
VDS(on)
0.33
Vdc
Forward Transconductance, (VDS = 10 V, ID = 0.5 A)
gFS
2.2
mhos
Ciss
410
Coss
145
Crss
55
td(on)
15
tr
15
td(off)
30
tf
32
Qg
Qgs
1.3
Qgd
3.2
0.8
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage, (VGS = 0, ID = 250 A)
ON CHARACTERISTICS
Input Capacitance
(VDS = 20 V,
VGS = 0,
f = 1 MHz)
MH )
Output Capacitance
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 25 V, ID = 0.5 A
VGS = 10 V
V, RG = 50 ohms
ohms,
RGS = 25 ohms)
Fall Time
Total Gate Charge
GateSource Charge
GateDrain Charge
(VDS = 80 V, ID = 1 A,
VGS = 10 Vdc)
S Fi
See
Figures 15 and
d 16
ns
nC
SOURCE DRAIN DIODE CHARACTERISTICS(1)

Forward OnVoltage
IS = 1 A, VGS = 0
VSD
Forward TurnOn Time
IS = 1 A, VGS = 0,
dlS/dt = 400 A/s
A/s,
VR = 50 V
ton
trr
Vdc
Limited by stray inductance
90
ns
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%
4197
MMFT1N10E
10 V
9V
1.2
7V
8V
TJ = 25C
6V
6
5V
2
VGS = 4 V
VGS(TH), GATE THRESHOLD VOLTAGE

(NORMALIZED)
10
0
0
4
6
8
VDS = VGS
ID = 1.0 mA
1.1
1.0
0.9
0.8
0.7
50
10
VDS = 10 V
100C
3
25C
10
0.4
TJ = 100C
0.3
25C
0.2
55C
0.1
0.3
0.2
0.1
0
6
8
10
12
14

4198
VGS = 10 V
TJ = 25C
ID = 1 A
0.5
0.5
0.4
150
16
TJ = 55C
50
100
TJ, JUNCTION TEMP (C)
Figure 2. GateThreshold Voltage Variation

With Temperature
Figure 1. On Region Characteristics
0.5
VGS = 10 V
ID = 1 A
0.4
0.3
0.2
0.1
0
50
0
50
100
150
Figure 6. OnResistance versus Junction

Temperature
MMFT1N10E
10

curves are based on an ambient temperature of 25C and a
maximum junction temperature of 150C. Limitations for repetitive pulses at various ambient temperatures can be determined by using the thermal response curves. Motorola
Application Note, AN569, Transient Thermal Resistance
General Data and Its Use provides detailed instructions.
VGS = 20 V
SINGLE PULSE
TA = 25C
20 ms
100 ms
0.1
1s
DC
500 ms
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
SWITCHING SAFE OPERATING AREA

The switching safe operating area (SOA) is the boundary
that the load line may traverse without incurring damage to
the MOSFET. The fundamental limits are the peak current,
IDM and the breakdown voltage, BVDSS. The switching SOA
is applicable for both turnon and turnoff of the devices for
switching times less than one microsecond.
r(t), EFFECTIVE THERMAL RESISTANCE

(NORMALIZED)
1.0
0.001
0.1
10
100

Safe Operating Area
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
0.01
t1
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
t2
1.0E02
t, TIME (s)
1.0E01
RJA(t) = r(t) RJA

RJA = 156C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RJA(t)
1.0E+00
1.0E+01
COMMUTATING SAFE OPERATING AREA (CSOA)

The Commutating Safe Operating Area (CSOA) of Figure 10 defines the limits of safe operation for commutated sourcedrain
current versus reapplied drain voltage when the sourcedrain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure
9 are present. Full or halfbridge PWM DC motor controllers are common applications requiring CSOA data.
Device stresses increase with increasing rate of change of source current so dIS/dt is specified with a maximum value. Higher
values of dIS/dt require an appropriate derating of IFM, peak VDS or both. Ultimately dIS/dt is limited primarily by device, package,
and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduction to reverse blocking.
VDS(pk) is the peak draintosource voltage that the device must sustain during commutation; IFM is the maximum forward
sourcedrain diode current just prior to the onset of commutation.
VR is specified at 80% rated BVDSS to ensure that the CSOA stress is maximized as IS decays from IRM to zero.
RGS should be minimized during commutation. TJ has only a second order effect on CSOA.
Stray inductances in Motorolas test circuit are assumed to be practical minimums. dV DS /dt in excess of 10 V/ns was attained with dI S /dt of 400 A/s.
4199
MMFT1N10E
15 V
VGS
0
IFM
90%
dlS/dt
IS
trr
10%
ton
IRM
0.25 IRM
tfrr
VDS(pk)
VR
VDS
VdsL
Vf
MAX. CSOA
STRESS AREA
Figure 9. Commutating Waveforms
5
IS , SOURCE CURRENT (AMPS)
RGS
dIS/dt 400 A/s
4.5
DUT
4
3.5
VR
2.5
VDS
20 V
1
VGS
0.5
0
20
40
60
80
100
120
VR = 80% OF RATED VDSS

VdsL = Vf + Li dlS/dt
140
Figure 10. Commutating Safe Operating Area

(CSOA)
Li
IS
+
1.5
IFM

Test Circuit
BVDSS
L
VDS
IL
IL(t)
VDD
RG
VDD
tP
Figure 12. Unclamped Inductive Switching

Test Circuit
4200
t, (TIME)

Waveforms
MMFT1N10E
VGS
1400
VDS
Ciss
TJ = 25C
f = 1 MHz
1200
Coss
C, CAPACITANCE (pF)
Crss
1000
800
600
Ciss
400
Coss
200
0
Crss
20
15
10
10
15
20
Figure 14. Capacitance Variation With Voltage
10
VDS = 50 V
VDS = 80 V
4
TJ = 25C
ID = 1 A
VGS = 10 V
Figure 15. Gate Charge versus GateToSource Voltage
+18 V
47 k
Vin
15 V
VDD
1 mA
10 V
100 k
0.1 F
2N3904
2N3904
100 k
47 k
SAME
DEVICE TYPE
AS DUT
100
FERRITE
BEAD
DUT
Vin = 15 Vpk; PULSE WIDTH 100 s, DUTY CYCLE 10%.
Figure 16. Gate Charge Test Circuit
4201
MOTOROLA

NChannel Enhancement Mode
MMFT2N02EL
This advanced EFET is a TMOS Medium Power MOSFET

designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold
voltage so it is fully enhanced with 5 Volts. This new energy efficient
device also offers a draintosource diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, dcdc converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
The device is housed in the SOT223 package which is designed
for medium power surface mount applications.
MEDIUM POWER
LOGIC LEVEL TMOS FET
1.6 AMP
20 VOLTS
RDS(on) = 0.15 OHM
2,4
D
4
1
2
3

Low Drive Requirement to Interface Power Loads to Logic
Level ICs, VGS(th) = 2 Volts Max
Low RDS(on) 0.15 max
Use MMFT2N02ELT1 to order the 7 inch/1000 unit reel.
Use MMFT2N02ELT3 to order the 13 inch/4000 unit reel.
G
S

TO261AA

Rating
Symbol
Value
VDS
20
VGS
15

ID
IDM
1.6
6.4
Adc
PD(1)
0.8
6.4
Watts
mW/C
TJ, Tstg
65 to 150
EAS
66
mJ
RJA
156
C/W
TL
260
10
C
Sec

Derate above 25C
(VDD = 10 V, VGS = 5 V, Peak IL= 2 A, L = 0.2 mH, RG = 25 )
Unit
Vdc
DEVICE MARKING
2N02L
Time in Solder Bath
REV 3
4202
MMFT2N02EL
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
IDSS
10
Adc
IGSS
100
nAdc
VGS(th)
Vdc
RDS(on)
0.15
Ohms
DraintoSource OnVoltage, (VGS = 5 V, ID = 1.6 A)
VDS(on)
0.32
Vdc
gFS
2.6
mhos
Ciss
580
Coss
430
Crss
250
td(on)
16
tr
73
td(off)
77
tf
107
Qg
20
Qgs
1.7
Qgd
0.9
OFF CHARACTERISTICS
ON CHARACTERISTICS
Input Capacitance
(VDS = 15 V,
VGS = 0,
f = 1 MHz)
MH )
Output Capacitance
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 V, ID = 1.6 A
VGS = 5 V
V, RG = 50 ohms
ohms,
RGS = 25 ohms)
Fall Time
Total Gate Charge
GateSource Charge
GateDrain Charge
(VDS = 16 V, ID = 1.6 A,
VGS = 5 Vdc)
S Fi
See
Figures 15 and
d 16
ns
nC

Forward OnVoltage
IS = 1.6 A, VGS = 0
VSD
Forward TurnOn Time
IS = 1.6 A, VGS = 0,
dlS/dt = 400 A/s
A/s,
VR = 16 V
ton
trr
Vdc
55
ns
4203
MMFT2N02EL
10
1.2
5
TJ = 25C
4.5
VGS(TH), GATE THRESHOLD VOLTAGE

(NORMALIZED)
10
3.5
2
VGS = 2.5 V
0
2
3
4
VDS = VGS
ID = 1 mA
1.1
0.9
0.8
0.7
50
TJ = 55C
VDS = 8 V
25C
6
100C
4
2
4
6
VGS = 5 V
0.25
0.2
TJ = 100C
0.15
25C
0.1
55C
0.05
0
0.3
0.2
0.1
3
4
5
6
7

4204
TJ = 25C
ID = 1.6 A
2
3
0.5
150
0.3
0.4
50
100
TJ, JUNCTION TEMP (C)

With Temperature
0.5
0.4
VGS = 5 V
ID = 1.6 A
0.3
0.2
0.1
0
50
0
50
100
150
Figure 6. OnResistance versus Junction

Temperature
MMFT2N02EL
10

curves are based on an ambient temperature of 25C and a
VGS = 15 V
SINGLE PULSE
TA = 25C
20 ms
100
1s
DC
0.1

(NORMALIZED)
1.0
500 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

IDM and the breakdown voltage, BVDSS. The switching SOA is
applicable for both turnon and turnoff of the devices for
ms
0.01
0.1
10
100

Safe Operating Area
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
0.01
t1
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
RJA(t) = r(t) RJA

RJA = 156C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
t2
1.0E02
t, TIME (s)
1.0E01
1.0E+00
1.0E+01

Stray inductances in Motorolas test circuit are assumed to be practical minimums. dVDS/dt in excess of 10 V/ns was attained with dI S /dt of 400 A/s.
4205
MMFT2N02EL
15 V
VGS
0
IFM
dlS/dt
90%
IS
10%
trr
ton
IRM
0.25 IRM
tfrr
VDS(pk)
VR
VDS
Vf
VdsL
MAX. CSOA
STRESS AREA
10
RGS
DUT
8
dIS/dt 400 A/s
VR
+
IFM
IS
20 V
VGS
Li
VDS
1
0

10 12 14 16 18 20 22 24 26 28 30
Figure 10. Commutating Safe Operating Area (CSOA)

Test Circuit
BVDSS
L
VDS
IL
IL(t)
VDD
RG
VDD
tP

Test Circuit
4206
t, (TIME)

Waveforms
MMFT2N02EL
VGS
1800
Ciss
1600
Crss
VDS
Coss
TJ = 25C
f = 1 MHz
C, CAPACITANCE (pF)
1400
1200
1000
800
Ciss
600
400
Coss
200
Crss
15
5
0
5
10
15
20
20
10
Figure 14. Capacitance Variation With Voltage
10
TJ = 25C
VDS = 16 V
ID = 1.6 A
9
8
7
6
5
4
3
2
1
0
10
15
5
20
VDD
+18 V
47 k
Vin
15 V
1 mA
5V
0.1 F
2N3904
2N3904
100 k
47 k
SAME
DEVICE TYPE
AS DUT
100 k
100
FERRITE
BEAD
DUT
4207
MOTOROLA

PChannel Enhancement Mode
MMFT2955E
TMOS MEDIUM POWER FET

1.2 AMP
60 VOLTS
RDS(on) = 0.3 OHM
This advanced EFET is a TMOS medium power MOSFET

designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. The device is housed in the
SOT223 package which is designed for medium power surface
mount applications.
4
1

Low RDS(on) 0.3 max
Use MMFT2955ET1 to order the 7 inch/1000 unit reel.
Use MMFT2955ET3 to order the 13 inch/4000 unit reel.
2
3
G
S

TO261AA

Rating
Symbol
Value
Unit
VDS
60
VGS
15

ID
IDM
1.2
4.8
Adc
PD(1)
0.8
6.4
Watts
mW/C
TJ, Tstg
65 to 150
EAS
108
mJ
RJA
156
C/W
TL
260
10
C
Sec

Derate above 25C
(VDD = 25 V, VGS = 10 V, Peak IL= 1.2 A, L = 0.2 mH, RG = 25 )
Vdc
DEVICE MARKING
2955
Time in Solder Bath
REV 3
4208
MMFT2955E
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
Vdc
IDSS
10
Adc
IGSS
100
nAdc
VGS(th)
4.5
Vdc
RDS(on)
0.3
Ohms
DraintoSource OnVoltage, (VGS = 10 V, ID = 1.2 A)
VDS(on)
0.48
Vdc
gFS
7.5
mhos
Ciss
460
Coss
210
Crss
84
td(on)
18
tr
29
td(off)
44
tf
32
Qg
18
Qgs
2.8
Qgd
7.5
OFF CHARACTERISTICS
ON CHARACTERISTICS

Input Capacitance
(VDS = 20 V,
VGS = 0,
f = 1 MHz)
MH )
Output Capacitance
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 25 V, ID = 1.6 A
VGS = 10 V
V, RG = 50 ohms
ohms,
RGS = 25 ohms)
Fall Time
Total Gate Charge
GateSource Charge
GateDrain Charge
(VDS = 48 V, ID = 1.2 A,
VGS = 10 Vdc)
S Figures
See
Fi
15 and
d 16
ns
nC

Forward OnVoltage
IS = 1.2 A, VGS = 0
VSD
Forward TurnOn Time
IS = 1.2 A, VGS = 0,
dlS/dt = 400 A/s
A/s,
VR = 30 V
ton
trr
Vdc
90
ns
4209
10
20 V
8V
10 V
15 V
TJ = 25C
7V
6
6V
4
5V
2
VGS = 4 V
0
4
6
8
10
VGS(th), GATE THRESHOLD VOLTS (NORMALIZED
MMFT2955E
1.2
VDS = VGS
ID = 1 mA
1.1
0.9
0.8
0.7
50
8
25C
55C
VDS = 10 V
100C
4
25C
55C
2
100C
55C
0
4
6
8
10
0.6
VGS = 10 V
0.5
100C
0.4
25C
0.3
55C
0.2
0.1
0
0.5
TJ = 25C
ID = 1.2 A
0.3
0.2
0.1
7
10
13
16

4210
4
6
19
0.4
150

With Temperature
0
50
100
0.5
0.4
VGS = 10 V
ID = 1.2 A
0.3
0.2
0.1
0
50
0
50
100
150

MMFT2955E
10

curves are based on a ambient temperature of 25C and a
20 ms
100 ms
500 ms
1s
DC
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

IDM and the breakdown voltage, BVDSS. The switching SOA
is applicable for both turnon and turnoff of the devices for

(NORMALIZED)
1.0
VGS = 20 V
SINGLE PULSE
TA = 25C
0.01
0.1
10
100

Safe Operating Area
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
0.001
1.0E05
0.01
t1
t2
SINGLE PULSE
RJA(t) = r(t) RJA

RJA = 156C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1

1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
1.0E+00
1.0E+01

Stray inductances in Motorolas test circuit are assumed to be practical minimums. dV DS /dt in excess of 10 V/ns was attained with dI S /dt of 400 A/s.
4211
MMFT2955E
15 V
VGS
0
IFM
dlS/dt
90%
IS
trr
10%
ton
IRM
0.25 IRM
tfrr
VDS(pk)
VR
VDS
VdsL
Vf
MAX. CSOA
STRESS AREA
RGS
dIS/dt 400 A/s
DUT
VR
3
IS
20 V
VGS
0
10
20
30
40
50
60
70

80
Figure 10. Commutating Safe Operating

Area (CSOA)
Li
VDS
IFM

Test Circuit
BVDSS
L
VDS
IL
IL(t)
VDD
RG
VDD
tP

Test Circuit
4212
t, (TIME)

Waveforms
MMFT2955E
VGS
VDS
1800
Ciss
1600
TJ = 25C
f = 1 MHz
Crss
C, CAPACITANCE (pF)
1400
Coss
1200
1000
800
600
Ciss
400
Coss
Crss
200
0
15
10
5
0
5
10
15
20
VGS
VDS
Figure 14. Capacitance Variation with Voltage
10
9
8
7
TJ = 25C
VDS = 48 V
ID = 1.2 A
6
5
4
3
2
1
0
7.5
13
20
+18 V
47 k
Vin
15 V
VDD
1 mA
0.1 F
2N3904
2N3904
100 k
47 k
SAME
DEVICE TYPE
AS DUT
10 V 100 k
100
FERRITE
BEAD
DUT
4213
MOTOROLA
Product Preview
MMFT3055V
TMOS V
SOT-223 for Surface Mount
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS EFET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
TMOS POWER FET

1.7 AMPERES
60 VOLTS
RDS(on) = 0.130 OHM
TM
D
4
G
1
2
3
New Features of TMOS V

Onresistance Area Product about Onehalf that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
Faster Switching than EFET Predecessors
S
CASE 318E04, Style 3
TO261AA
Features Common to TMOS V and TMOS EFETS

IDSS and VDS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and TMOS EFET
Available in 12 mm Tape & Reel
Use MMFT3055VT1 to order the 7 inch/1000 unit reel
Use MMFT3055VT3 to order the 13 inch/4000 unit reel
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
20
25
Vdc
Vpk

Drain Current Continuous @ 100C
ID
ID
IDM
1.7
1.4
6.0
Adc
Total PD @ TA = 25C mounted on 1 sq. Drain pad on FR4 bd material

Total PD @ TA = 25C mounted on 0.70 sq. Drain pad on FR4 bd material
Total PD @ TA = 25C mounted on min. Drain pad on FR4 bd material
Derate above 25C
PD
2.0
1.7
0.9
6.3
Watts
mW/C
TJ, Tstg
EAS
55 to 175
Rating
GatetoSource Voltage Nonrepetitive (tp 10 ms)

Apk
mJ
58
C/W
Thermal Resistance
Junction to Ambient on 1 sq. Drain pad on FR4 bd material
Junction to Ambient on 0.70 sq. Drain pad on FR4 bd material
Junction to Ambient on min. Drain pad on FR4 bd material
RJA
RJA
RJA
TL
70
88
159
260
EFET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
4214
MMFT3055V
Characteristic
Symbol
Min
Typ
Max
Unit
60
63
Vdc
mV/C
10
100
100
nAdc
2.0
2.8
5.6
4.0
Vdc
mV/C
0.115
0.13
Ohm
0.27
0.25
gFS
1.0
2.7
mhos
Ciss
360
500
pF
Coss
110
150
Crss
25
50
td(on)
8.0
20
tr
9.0
20
td(off)
32
60
tf
18
40
QT
13
20
Q1
2.0
Q2
5.0
Q3
4.0
0.85
0.7
1.6
trr
40
ta
34
tb
6.0
QRR
0.089
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
Adc
VGS(th)
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 0.85 Adc)
RDS(on)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 1.7 Adc)
(VGS = 10 Vdc, ID = 0.85 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 30 Vdc, ID = 1.7 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 1.7 Adc,

VGS = 10 Vdc)
ns
nC

Forward OnVoltage (1)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 150C)

((IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

(Measured from the drain lead 0.25 from package to center of die)
LD

LS
nH
nH

4215
MOTOROLA
Product Preview
MMFT3055VL
TMOS V
SOT-223 for Surface Mount
TMOS POWER FET

1.5 AMPERES
60 VOLTS
RDS(on) = 0.140 OHM
TM
D
4
G
1
2

CASE 318E04, Style 3

TO261AA

Available in 12 mm Tape & Reel
Use MMFT3055VLT1 to order the 7 inch/1000 unit reel
Use MMFT3055VLT3 to order the 13 inch/4000 unit reel
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
15
20
Vdc
Vpk

ID
ID
IDM
1.5
1.2
5.0
Adc
Total PD @ TA = 25C mounted on 1 sq. Drain pad on FR4 bd material

Total PD @ TA = 25C mounted on 0.70 sq. Drain pad on FR4 bd material
Total PD @ TA = 25C mounted on min. Drain pad on FR4 bd material
Derate above 25C
PD
2.0
1.7
0.9
6.3
Watts
mW/C
TJ, Tstg
EAS
55 to 175
Rating

Apk
mJ
45
C/W
Thermal Resistance
Junction to Ambient on 1 sq. Drain pad on FR4 bd material
Junction to Ambient on 0.70 sq. Drain pad on FR4 bd material
Junction to Ambient on min. Drain pad on FR4 bd material
RJA
RJA
RJA
TL
70
88
159
260
EFET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
4216
MMFT3055VL
Characteristic
Symbol
Min
Typ
Max
Unit
60
65
Vdc
mV/C
10
100
100
nAdc
1.0
1.5
3.7
2.0
Vdc
mV/C
0.125
0.14
Ohm
0.25
0.24
gFS
1.0
3.5
mhos
Ciss
350
490
pF
Coss
110
150
Crss
29
60
td(on)
9.5
20
tr
18
40
td(off)
35
70
tf
22
40
QT
9.0
10
Q1
1.0
Q2
4.0
Q3
4.0
0.82
0.68
1.2
trr
41
ta
29
tb
12
QRR
0.066
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 0.75 Adc)
RDS(on)
(VGS = 5.0 Vdc, ID = 1.5 Adc)
(VGS = 5.0 Vdc, ID = 0.75 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 30 Vdc, ID = 1.5 Adc,

VGS = 5
5.0
0 Vdc,
Vdc
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 1.5 Adc,

VGS = 5.0 Vdc)
ns
nC


(IS = 1.5 Adc, VGS = 0 Vdc, TJ = 150C)

((IS = 1.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4217
MOTOROLA
Designer's
Data Sheet
MMSF2P02E
TMOS Single P-Channel

SINGLE TMOS
POWER MOSFET
2.5 AMPERES
20 VOLTS
RDS(on) = 0.250 OHM


SO8
Diode Exhibits High Speed
S
NC
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View

Rating
Total Power Dissipation @ TA = 25C(2)
Thermal Resistance Junction to Ambient(2)
Symbol
Value
Unit
VDSS
VGS
20
Vdc
20
Vdc
ID
ID
IDM
PD
2.5
1.7
13
Adc
2.5
Watts
TJ, Tstg
EAS
55 to 150
216
mJ
RJA
50
C/W
TL
260
Apk
DEVICE MARKING
S2P02
(2) Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), 10 sec. max.
Device
MMSF2P02ER2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 3
4218
MMSF2P02E
Characteristic
Symbol
Min
Typ
Max
Unit
20
24.7
1.0
10
100
1.0
2.0
4.7
3.0
0.19
0.3
0.25
0.4
gFS
1.0
2.8
Mhos
Ciss
340
475
pF
Coss
220
300
Crss
75
150
td(on)
20
40
tr
40
80
td(off)
53
106
tf
41
82
td(on)
13
26
tr
29
58
td(off)
30
60
tf
28
56
QT
10
15
Q1
1.1
Q2
3.3
Q3
2.5
VSD
1.5
2.0
Vdc
trr
34
64
ns
ta
18
tb
16
QRR
0.035
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
Vdc
mV/C
Ohm
Input Capacitance
Output Capacitance
(VDS = 16 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 5.0
5 0 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.0 )
Fall Time
Gate Charge
((VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)

((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ns
ns
nC

4219
MMSF2P02E
4
4.1 V
3.9 V
3.7 V
3.5 V
3.3 V
0
0.4
0.8
1.2
1.6
100C
2
25C
TJ = 55C
1
3.5
4.5
0.6
ID = 1 A
TJ = 25C
0.5
0.4
0.3
0.2
0.1
0
3
0
2.5
10
0.6
TJ = 25C
0.5
0.4
VGS = 4.5
0.3
0.2
10 V
0.1
0
0.5
1.5


and Gate Voltage
2.0
100
VGS = 10 V
ID = 2 A
VGS = 0 V
1.5
4.3 V
4.5 V
VDS 10 V
TJ = 25C
4.7 V
5V
VGS = 10 7 V
1.0
0.5
0
50
4220
25
25
50
75
100
125
150
TJ = 125C
10
100C
12
16

Temperature

versus Voltage
20
MMSF2P02E
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1000
VDS = 0 V
TJ = 25C
Ciss
800
C, CAPACITANCE (pF)
VGS = 0 V
600
Crss
400
Ciss
Coss
200
Crss
0
10

12
Q3
Q2
Q1
ID = 2 A
TJ = 25C
2
4
6
8
0
12
10


100
2
TJ = 25C
VGS = 0 V
t, TIME (ns)
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25C
td(off)
tr
tf
td(on)
10
12
VGS
VDS
30
5
0
5
10
15
20
25
VGS
VDS
16
QT


10
100

1.6
1.2
0.8
0.4
0
0.6
0.8
1
1.2
1.4
1.6

versus Current
4221
MMSF2P02E
di/dt = 300 A/s
100

trr
High Cell Density

trr
tb
ta
10
VGS = 20 V
SINGLE PULSE
TC = 25C
1 ms
10 ms
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
t, TIME
10
100

Safe Operating Area

250

thick single sided), 10s max.
ID = 6 A
200
150
100
50
25
50
75
100
125
150

rating must be derated for temperature as shown in the accompanying graph (Figure 13). Maximum energy at currents
below rated continuous ID can safely be assumed to equal
the values indicated.

(IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0022
0.0210
0.2587
0.0020 F
0.0207 F
0.3517 F
0.7023
0.6863
0.01
0.01
3.1413 F
108.44 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
4222
MMSF2P02E
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4223
MOTOROLA
Designer's
Data Sheet
MMSF3P02HD

SINGLE TMOS
POWER MOSFET
3.0 AMPERES
20 VOLTS
RDS(on) = 0.075 OHM

voltage transients.

SO8
G
S
NC
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View

Rating
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
PD
20
Vdc
5.6
3.6
30
Adc
2.5
Watts
TJ, Tstg
EAS
55 to 150
567
mJ
RJA
50
C/W
TL
260
Apk
DEVICE MARKING
S3P02
Device
MMSF3P02HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4224
MMSF3P02HD
Characteristic
Symbol
Min
Typ
Max
Unit
20
24
1.0
10
100
1.0
1.5
4.0
2.0
0.06
0.08
0.075
0.095
gFS
3.0
7.2
mhos
Ciss
1010
1400
pF
Coss
740
920
Crss
260
490
td(on)
25
50
tr
135
270
td(off)
54
108
tf
84
168
td(on)
16
32
tr
40
80
td(off)
110
220
tf
97
194
QT
33
46
Q1
3.0
Q2
11
Q3
10
1.35
0.96
1.75
trr
76
ta
32
tb
44
QRR
0.133
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
Static DrainSource OnResistance

(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
Vdc
mV/C
Ohm
Input Capacitance
Output Capacitance
(VDS = 16 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.0 )
Fall Time
Gate Charge
S Fi
See
Figure 8
((VDS = 16 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125C)
S Figure
See
Fi
15
((IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
ns
nC
Vdc
ns

4225
MMSF3P02HD
6
5
3.3 V
VDS 10 V
TJ = 25C
3.7 V
4.5 V
3.9 V
3.5 V
VGS = 10 V
3.1 V
4
3
2.9 V
2
2.7 V
5
4
3
TJ = 100C
25C
1
2.5 V
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.6
2.4
2.8
3.2
ID = 1.5 A
TJ = 25C
0.4
0.2
0
1
10
3.4
0.09
TJ = 25C
0.08
VGS = 4.5 V
0.07
10 V
0.06
0.05
0


and Gate Voltage
1000
1.20

(NORMALIZED)
1.8
0.6
0
1.6
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
55C
VGS = 0 V
VGS = 10 V
ID = 3.0 A
1.10
1.00
0.90
0.80
50
4226
25
50
75
100
125
150
TJ = 125C
100
10
12
16

Temperature

20
MMSF3P02HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
3500
C, CAPACITANCE (pF)
3000
2500
VDS = 0 V
TJ = 25C
VGS = 0 V
Ciss
2000
1500
Crss
Ciss
1000
Coss
500
0
10
Crss
5
0
VGS
10
15
20
VDS
4227
12
10
VDD = 10 V
ID = 3 A
VGS = 10 V
TJ = 25C
td(off)
16
6
Q1
12
ID = 3 A
TJ = 25C
Q2
4
2
4
VDS
Q3
0
0
12
16
20
24
28
32
t, TIME (ns)
20
VGS
1000
24
QT
MMSF3P02HD
100
tf
tr
td(on)
10
1
36
10


100

snappy.

these losses.
3
2.5
VGS = 0 V
TJ = 25C
2
1.5
1
0.5
0
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
1.4
4228
MMSF3P02HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
600
10
VGS = 20 V
SINGLE PULSE
TC = 25C
100 s
1 ms
10 ms
0.1
0.01
0.1

100
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
450
300
150
0
100

Safe Operating Area
ID = 9 A
25
50
75
100
125
150

4229
MMSF3P02HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0163
0.0652
0.1988
0.0307 F
0.1668 F
0.5541 F
0.6411
0.9502
0.01
0.01
1.9437 F
72.416 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4230
MOTOROLA
Advance Information
MMSF3P02Z
TMOS Single P-Channel with

Protected Gate
EZFETs are an advanced series of power MOSFETs which utilize
Motorolas High Cell Density TMOS process and contain monolithic
backtoback zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface
mount MOSFETs feature ultra low RDS(on) amd true logic level
has a very low reverse recovery time. EZFET devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcdc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
SINGLE TMOS
POWER MOSFET
3.0 AMPERES
20 VOLTS
RDS(on) = 0.060 OHM

SO8

Designed to withstand 200V Machine Model and 2000V Human Body Model
MAXIMUM RATINGS (TJ = 25C unless otherwise noted) *
S
Source
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
Rating
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
PD
15
Vdc
6.5
3.0
52
Adc
2.5
20
Watts
mW/C
PD
1.6
12
Watts
mW/C
TJ, Tstg
EAS
55 to 150
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 9 Apk, L = 14 mH, RG = 25 )
Apk
C
mJ
567
RJA
50
80
C/W
* Negative sign for PChannel omitted for clarity.

(1) When mounted on 1 inch square FR4 or G10 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on minimum recommended FR4 or G10 board (VGS = 10 V, @ Steady State)
DEVICE MARKING
S3P02Z
Device
MMSF3P02ZR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 1
4231
MMSF3P02Z
Characteristic
Symbol
Min
Typ
Max
Unit
20
23
0.05
0.2
2.0
10
0.85
5.0
1.0
1.8
3.7
3.0
45
65
60
80
gFS
4.0
5.6
Mhos
Ciss
1100
2200
pF
Coss
720
1440
Crss
320
640
td(on)
90
180
tr
350
700
td(off)
810
1620
tf
1030
2060
td(on)
230
460
tr
1300
2600
td(off)
510
1020
tf
1040
2080
QT
39
55
Q1
2.7
Q2
14.3
Q3
10.2
1.2
0.76
1.6
trr
677
ta
256
tb
420
QRR
5.0
OFF CHARACTERISTICS
(Cpk 2.0)

(1) (3)
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
Adc
(Cpk 2.0)

(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(Cpk 2.0)
(1) (3)
(1) (3)
(1)
VGS(th)
Vdc
RDS(on)
mV/C
m
Input Capacitance
Output Capacitance
(VDS = 16 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc, RG = 6.0 ) (1)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc, RG = 6.0 ) (1)
Fall Time
Gate Charge
((VDS = 16 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc) (1)

(IS = 3.0 Adc, VGS = 0 Vdc) (1)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125C)
(IS = 3
3.0
0 Ad
Adc, VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (1)
VSD
ns
ns
nC
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4232
MMSF3P02Z
6
VGS = 10 V
4.5 V
3.8 V
3.1 V
VDS 10 V
TJ = 25C
3.3 V
3
2.9 V
2
2.7 V
5
4
3
TJ = 55C
25C
1
100C
2.4 V
0
0.5
1.5
0
1.5
2.5
3.5
0.4
ID = 1.5 A
TJ = 25C
0.3
0.2
0.1
0
0
4
6
8
10
0.08
TJ = 25C
VGS = 4.5
0.06
10 V
0.04
0.02
0
0


and Gate Voltage
2.0
1000
VGS = 0 V
VGS = 10 V
ID = 1.5 A
1.5
1.0
TJ = 125C
100
100C
10
0.5
0
50
1
25
25
50
75
100
125
150
10
20
15

with Temperature

versus Voltage
4233
MMSF3P02Z

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2500
TJ = 25C
VGS = 0 V
C, CAPACITANCE (pF)
2000
1500
Ciss
1000
Coss
500
Crss
10
15
20
4234
16
QT
12
9
VDS
VGS
8
Q1
Q2
4
Q3
ID = 3 A
TJ = 25C
10
VDD = 10 V
ID = 3 A
VGS = 10 V
TJ = 25C
tf
td(off)
1000
tr
td(on)
100
0
40
30
20
10000
t, TIME (ns)
12
MMSF3P02Z
10
10

100


these losses.
3
VGS = 0 V
TJ = 25C
2.5
snappy.
2
1.5
1
0.5
0
0.4
0.6
0.8
1.0
1.2
4235
MMSF3P02Z
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
600
VGS = 15 V
SINGLE PULSE
TC = 25C

100
10
1 ms
10 ms
1
0.1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
dc
10

Safe Operating Area
4236
ID = 9 A
400
200
0
100
25
50
75
100
125
150

MMSF3P02Z

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0163
0.0652
0.1988
0.0307 F
0.1668 F
0.5541 F
0.6411
0.9502
0.01
0.01
1.9437 F
72.416 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4237
MOTOROLA
Designer's
Data Sheet
MMSF3P03HD
TMOS P-Channel
SINGLE TMOS POWER FET

3.0 AMPERES
30 VOLTS
RDS(on) = 0.1 OHM

voltage transients.
D
SO8
G
S
Rating
NC
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
Symbol
Value
Unit
VDSS
VDGR
30
Vdc
30
Vdc
VGS
ID
ID
IDM
20
Vdc
4.6
3.0
50
Adc
PD
2.5
Watts
55 to 150

Apk
C
EAS
567
mJ
RJA
50
C/W
TL
260
DEVICE MARKING
S3P03
Device
MMSF3P03HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4238
MMSF3P03HD
Symbol
Characteristic
Min
Typ
Max
Unit
30
30
1.0
10
5.0
100
1.0
1.5
3.9
2.0
0.80
0.90
0.100
0.110
gFS
3.0
5.0
mhos
Ciss
1015
1420
pF
Coss
470
660
Crss
135
190
td(on)
26
52
tr
102
204
td(off)
67
134
tf
69
138
td(on)
14
28
tr
32
64
td(off)
104
208
tf
66
132
QT
32.4
45
Q1
2.7
Q2
9.0
Q3
6.9
1.3
0.85
2.0
trr
31
ta
22
tb
9.0
QRR
0.034
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
Vdc
mV/C
Ohm
Input Capacitance
Output Capacitance
(VDS = 24 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDS = 15 Vdc, ID = 3.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDS = 15 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.0 )
Fall Time
Gate Charge
((VDS = 24 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125C)
((IS = 3.0 Adc,
dIS/dt = 100 A/s)
VSD
ns
nC
Vdc
ns

4239
MMSF3P03HD
6
6
TJ = 25C
4.5 V
VDS 10 V
VGS = 10 V
3.1 V
3.8 V
4
2.9 V
3
2
2.7 V
5
4
3
TJ = 100C
25C
1
1
2.4 V
0
55C
1.2
0.4
0.8
1.6
ID = 1.5 A
0.5
0.4
0.3
0.2
0.1
0
2
10
0.095
TJ = 25C
0.09
VGS = 4.5 V
0.085
0.08
10 V
0.075
0.07
0


and Gate Voltage
3.0
2.5
0.6
3.2
1000
VGS = 0 V
VGS = 4.5 V
ID = 1.5 A
TJ = 125C

(NORMALIZED)
3
2.2
2.4
2.6
2.8
2.0
1.5
1.0
100
100C
10
0.5
0
50
4240
25
25
50
75
100
125
150
10
15
20
25

Temperature

30
MMSF3P03HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
3500
VDS = 0 V
TJ = 25C
VGS = 0 V
3000
C, CAPACITANCE (pF)
Ciss
2500
2000
1500
Crss
Ciss
1000
Coss
500
0
10
Crss
5
5
0
VGS
VDS
10
15
20
25
30
4241
24
QT
10
20
VGS
VDS
16
12
4 Q1
2
0
ID = 3 A
TJ = 25C
Q2
8
4
Q3
10
15
20
25
30
0
35
1000
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MMSF3P03HD
td(off)
100
tf
tr
td(on)
10
1
10


100

snappy.

these losses.
3
2.5
VGS = 0 V
TJ = 25C
2
1.5
1
0.5
0
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
4242
MMSF3P03HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
600
10
VGS = 20 V
SINGLE PULSE
TC = 25C
1 ms
0.01
0.1
10 s
100 s
10 ms
0.1

100
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
500
400
300
200
100
0
100

Safe Operating Area
ID = 9 A
25
50
75
100
125
150

4243
MMSF3P03HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0163
0.0652
0.1988
0.0307 F
0.1668 F
0.5541 F
0.6411
0.9502
0.01
0.01
1.9437 F
72.416 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4244
MOTOROLA
Designer's
Data Sheet
MMSF4P01HD
TMOS P-Channel

SINGLE TMOS POWER FET

4.0 AMPERES
12 VOLTS
RDS(on) = 0.08 OHM

SO8
S
NC
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View

Rating
Symbol
Value
Unit
VDSS
12
Vdc
VDGR
12
Vdc
VGS
8.0
Vdc

ID
ID
IDM
5.1
3.3
26
Adc
PD
2.5
Watts
55 to 150

Apk
C
RJA
50
C/W
TL
260
DEVICE MARKING
S4P01
Device
MMSF4P01HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4245
MMSF4P01HD
Symbol
Characteristic
Min
Typ
Max
Unit
12
22
1.0
10
100
0.7
0.95
2.7
1.1
0.073
0.08
0.08
0.09
gFS
3.0
7.0
mhos
Ciss
1270
1700
pF
Coss
935
1300
Crss
420
600
td(on)
25
35
tr
250
350
td(off)
58
80
tf
106
150
td(on)
17
25
tr
71
100
td(off)
95
140
tf
106
150
QT
24
34
Q1
2.4
Q2
11.4
Q3
8.4
1.3
1.1
1.8
trr
134
ta
66
tb
68
QRR
0.33
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
RDS(on)
Vdc
mV/C
Ohm
Input Capacitance
Output Capacitance
(VDS = 10 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDS = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2.7
2 7 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 6.0 )
Fall Time
Gate Charge
((VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)

(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125C)
((IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
ns
nC
Vdc
ns

4246
MMSF4P01HD
VGS = 8 V
4.5 V
3.1 V
2.5 V
2.3 V
2.7 V
VDS 10 V
TJ = 25C
2.1 V
4
1.9 V
2
1.7 V
4
TJ = 100C
25C
2
55C
1.5 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
1.2
1.4
1.6
1.8
2.2
0.16
TJ = 25C
ID = 2 A
0.12
0.08
0.04
0
2
2.4
0.1
TJ = 25C
0.09
VGS = 2.7 V
0.08
4.5 V
0.07
0.06
0


and Gate Voltage
1000
1.5
VGS = 0 V
VGS = 4.5 V
ID = 4 A
TJ = 125C
I DSS, LEAKAGE (nA)
R DS(on) , DRAINTOSOURCE RESISTANCE

(NORMALIZED)
100
100C
0.5
0
50
25
25
50
75
100
125
150
10

Temperature

12
4247
MMSF4P01HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
4800
4000
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
TJ = 25C
Ciss
3200
2400
Crss
1600
Ciss
800
Coss
Crss
8
0
VGS
12
VDS
4248
8
VGS
VDS
3
6
Q1
Q2
4
ID = 4 A
TJ = 25C
Q3
10
15
0
25
20
VDD = 6 V
ID = 4 A
VGS = 4.5 V
TJ = 25C
t, TIME (ns)
1000
10
QT
MMSF4P01HD
tf
100
td(off)
tr
td(on)
10
10
QG, TOTAL GATE CHARGE (nC)


100

these losses.
snappy.
4
VGS = 0 V
TJ = 25C
3
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
4249
MMSF4P01HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).

100
10
VGS = 10 V
SINGLE PULSE
TC = 25C
1 ms
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
100

Safe Operating Area
4250
MMSF4P01HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0163
0.0652
0.1988
0.0307 F
0.1668 F
0.5541 F
0.6411
0.9502
0.01
0.01
1.9437 F
72.416 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4251
MOTOROLA
Advance Information
MMSF4P01Z
TMOS Single P-Channel with

Protected Gate
SINGLE TMOS
POWER MOSFET
4.0 AMPERES
20 VOLTS
RDS(on) = 0.070 OHM

SO8
G

S
Source
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
Rating
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
PD
8.0
Vdc
5.7
4.0
46
Adc
2.5
20
Watts
mW/C
PD
1.6
12
Watts
mW/C
TJ, Tstg
RJA
55 to 150
50
80
C/W
Apk
* Negative sign for PChannel omitted for clarity.

(1) When mounted on 1 inch square FR4 or G10 board (VGS = 4.5 V, @ 10 Seconds)
DEVICE MARKING
S4P01Z
Device
MMSF4P01ZR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 1
4252
MMSF4P01Z
Characteristic
Symbol
Min
Typ
Max
Unit
20
16.6
0.05
0.55
2.0
10
0.15
5.0
0.7
0.85
2.5
1.1
50
70
70
90
gFS
4.0
7.5
Mhos
Ciss
270
540
pF
Coss
825
1650
Crss
100
200
td(on)
150
300
tr
800
1600
td(off)
1420
2840
tf
1830
3660
td(on)
260
520
tr
1950
3900
td(off)
600
1200
tf
1390
2780
QT
24
34
Q1
3.0
Q2
11
Q3
8.0
1.1
0.75
1.8
trr
373
ta
750
tb
1120
QRR
9.0
OFF CHARACTERISTICS
(Cpk 2.0)

(1) (3)
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
Adc
(Cpk 2.0)

(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
(Cpk 2.0)
(1) (3)
(1) (3)
(1)
VGS(th)
Vdc
RDS(on)
mV/C
m
Input Capacitance
Output Capacitance
(VDS = 10 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc, RG = 6.0 ) (1)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2.7 Vdc, RG = 6.0 ) (1)
Fall Time
Gate Charge
((VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc) (1)

(IS = 4.0 Adc, VGS = 0 Vdc) (1)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125C)
(IS = 4
4.0
0 Ad
Adc, VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (1)
VSD
ns
ns
nC
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4253
MMSF4P01Z
VGS = 8 V
4.5 V
3.1 V
2.7 V
2.4 V
VDS 10 V
TJ = 25C
2V
1.8 V
1.6 V
TJ = 55C
25C
100C
0.4
1.2
0.6
1.6
0.4
1.2
1.6
0.4
ID = 2 A
TJ = 25C
0.3
0.2
0.1
0
0
2
4
6
0.09
TJ = 25C
VGS = 2.7 V
0.06
4.5 V
0.03
0
0


and Gate Voltage
2.0
1000
VGS = 0 V
VGS = 4.5 V
ID = 2 A
1.5
0.8
1.0
TJ = 125C
100
100C
10
0.5
0
50
4254
25
25
50
75
100
125
150

with Temperature

versus Voltage
12
MMSF4P01Z

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
3500
TJ = 25C
VGS = 0 V
C, CAPACITANCE (pF)
2800
2100
Ciss
1400
Coss
700
Crss
12
4255
10
QT
VDS
Q2
Q1
VGS
1
Q3
0
ID = 4 A
TJ = 25C
5
10
15
20
25
10000
VDD = 6 V
ID = 4 A
VGS = 4.5 V
tf
TJ = 25C
td(off)
1000
tr
t, TIME (ns)
MMSF4P01Z
td(on)
100
10
10

100


these losses.
snappy.
4
VGS = 0 V
TJ = 25C
3
0
0.1
0.3
0.5
0.7
0.9
1.1
4256
MMSF4P01Z
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
(IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature. Maximum energy at
currents below rated continuous ID can safely be assumed to
100
VGS = 8 V
SINGLE PULSE
TC = 25C
100 s
10
1 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
dc
10
100

Safe Operating Area
4257
MMSF4P01Z

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0163
0.0652
0.1988
0.0307 F
0.1668 F
0.5541 F
0.6411
0.9502
0.01
0.01
1.9437 F
72.416 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4258
MOTOROLA
Designer's
Data Sheet
MMSF5N02HD
TMOS Single N-Channel


voltage transients.
SINGLE TMOS
POWER MOSFET
5.0 AMPERES
20 VOLTS
RDS(on) = 0.025 OHM
D
SO8
G
S
NC
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View

Rating
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 6.0 mH, RG = 25 )
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
PD
20
Vdc
8.2
5.6
41
Adc
2.5
Watts
TJ, Tstg
EAS
55 to 150
675
mJ
RJA
50
C/W
TL
260
Apk
DEVICE MARKING
S5N02
Device
MMSF5N02HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4259
MMSF5N02HD
Characteristic
Symbol
Min
Typ
Max
Unit
20
41
0.02
1.0
10
100
1.0
1.5
4.0
2.0
0.0185
0.0219
0.025
0.040
gFS
3.0
12
Mhos
Ciss
1130
1582
pF
Coss
464
650
Crss
117
235
td(on)
15
30
tr
93
185
td(off)
35
70
tf
40
80
td(on)
9.0
tr
53
td(off)
56
tf
39
QT
30.3
43
Q1
3.0
Q2
7.5
Q3
6.0
0.82
0.69
1.0
trr
32
ta
24
tb
8.0
QRR
0.045
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)
Vdc
mV/C
Ohm
Input Capacitance
Output Capacitance
(VDS = 16 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 6.0 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.0 )
Fall Time
Gate Charge
S Fi
See
Figure 8
((VDS = 16 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc)

(IS = 5.0 Adc, VGS = 0 Vdc, TJ = 125C)
S Figure
See
Fi
15
((IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
ns
nC
Vdc
ns

4260
MMSF5N02HD
VGS = 10 V
10
TJ = 25C
3.1 V
4.5 V
10
3.8 V
6
VDS 10 V
4
TJ = 100C
25C
2
55C
2.4 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.9
2.1
2.3
2.5
2.7
2.9
0.16
0.12
0.08
0.04
0
1
10
3.1
3.3
0.023
TJ = 25C
VGS = 4.5 V
0.021
0.019
10 V
0.017
0
10


and Gate Voltage
1.6
1000
VGS = 0 V
VGS = 10 V
ID = 2.5 A
TJ = 125C
1.4
1.7
ID = 2.5 A
0
1.5
1.8
0.2

(NORMALIZED)
1.2
100
100C
25C
10
0.8
0.6
50
25
25
50
75
100
125
150
8
12
4
16

Temperature

20
4261
MMSF5N02HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
3500
VDS = 0 V
VGS = 0 V
TJ = 25C
3000
C, CAPACITANCE (pF)
Ciss
2500
2000
1500
Crss
Ciss
1000
Coss
500
0
10
Crss
5
0
VGS
10
15
20
VDS
4262
12
24
QT
10
1000
VDD = 10 V
ID = 5 A
VGS = 10 V
TJ = 25C
16
6
Q1
12
ID = 5 A
TJ = 25C
Q2
4
VDS
Q3
0
0
12
16
20
24
t, TIME (ns)
20
VGS
MMSF5N02HD
100
tf
tr
td(on)
10
1
1
32
28
td(off)
10


100

these losses.
snappy.
VGS = 0 V
TJ = 25C
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
4263
MMSF5N02HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
675
10
VGS = 10 V
SINGLE PULSE
TC = 25C
100 s
1 ms
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10

Safe Operating Area
4264

100
475
375
275
175
75
25
100
ID = 15 A
575
25
50
75
100
125
150

MMSF5N02HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0163
0.0652
0.1988
0.0307 F
0.1668 F
0.5541 F
0.6411
0.9502
0.01
0.01
1.9437 F
72.416 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4265
MOTOROLA
Designer's
Data Sheet
MMSF5N03HD

SINGLE TMOS
POWER MOSFET
5.0 AMPERES
30 VOLTS
RDS(on) = 0.040 OHM

voltage transients.
D
SO8
G
S
NC
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View

Rating
Symbol
Value
Unit
VDSS
VDGR
VGS
30
Vdc
30
Vdc
20
Vdc

ID
ID
IDM
PD
6.5
4.4
33
Adc
2.5
Watts
TJ, Tstg
EAS
55 to 150
450
mJ
RJA
50
C/W
TL
260

Apk
DEVICE MARKING
S5N03
Device
MMSF5N03HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 4
4266
MMSF5N03HD
Characteristic
Symbol
Min
Typ
Max
Unit
30
34
1.0
10
100
1.0
2.0
5.0
3.0
0.033
0.04
0.040
0.050
gFS
3.0
8.0
Mhos
Ciss
1207
1680
pF
Coss
354
490
Crss
62
120
td(on)
20
40
tr
108
216
td(off)
36
72
tf
37
74
td(on)
11
22
tr
36
72
td(off)
68
136
tf
38
76
QT
15.2
21
Q1
3.4
Q2
6.6
Q3
5.6
0.88
0.77
1.3
trr
33
ta
21
tb
12
QRR
0.037
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
Vdc
mV/C
Ohms
Input Capacitance
Output Capacitance
(VDS = 24 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 5.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 9.1 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
S Fi
See
Figure 8
((VDS = 24 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc)

(IS = 5 Adc, VGS = 0 Vdc)
(IS = 5 Adc, VGS = 0 Vdc, TJ = 125C)
S Figure
See
Fi
15
((IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
ns
nC
Vdc
ns

4267
MMSF5N03HD
10
10
VDS 10 V
TJ = 25C
VGS = 10 V
8
4.5 V
6
3.8 V
4
3.1 V
4
TJ = 100C
25C
2
55C
2.4 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
2.6
2.8
3.2
3.4
3.6
0.16
0.12
0.08
0.04
0
1
10
3.8
0.0425
TJ = 25C
0.04
VGS = 4.5 V
0.0375
0.035
10 V
0.0325
0.03
0
10


and Gate Voltage
1000
1.6
VGS = 0 V
VGS = 10 V
ID = 5 A
TJ = 125C
1.4
ID = 2.5 A
0.2

(NORMALIZED)
1.2
100
100C
10
0.8
25C
0.6
50
4268
25
25
50
75
100
125
150
10
20

Temperature

30
MMSF5N03HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
3500
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
3000
2500
Ciss
2000
1500
Ciss
Crss
1000
Coss
500
Crss
0
10
0
VGS
5
10
VDS
15
20
25
30
4269
12
1000
25
QT
10
VDD = 15 V
ID = 5 A
VGS = 4.5 V
TJ = 25C
20
VGS
Q1
Q2
t, TIME (ns)
MMSF5N03HD
15
6
ID = 5 A
TJ = 25C
10
4
5
2
Q3
0
VDS
4
10
12
0
14
100
tr
td(off)
tf
td(on)
10
1
16
10


100

snappy.

these losses.
VGS = 0 V
TJ = 25C
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
4270
MMSF5N03HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
10
450
VGS = 10 V
SINGLE PULSE
TC = 25C

100
100 s
1 ms
10 ms
1
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
ID = 15 A
300
150
0
100

Safe Operating Area
25
50
75
100
125
150

4271
MMSF5N03HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0163
0.0652
0.1988
0.0307 F
0.1668 F
0.5541 F
0.6411
0.9502
0.01
0.01
1.9437 F
72.416 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4272
MOTOROLA
Advance Information
MMSF5N03Z
TMOS Single N-Channel with

Protected Gate
SINGLE TMOS
POWER MOSFET
5.0 AMPERES
30 VOLTS
RDS(on) = 0.030 OHM

SO8

S
Source
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
Rating
Symbol
Value
Unit
VDSS
VDGR
30
Vdc
30
Vdc
VGS
ID
ID
IDM
PD
15
Vdc
7.5
5.6
60
Adc
2.5
20
Watts
mW/C
PD
1.6
12
Watts
mW/C
TJ, Tstg
EAS
55 to 150
Apk
C
mJ
450
RJA
50
80
C/W
(1) When mounted on 1 inch square FR4 or G10 board (VGS = 10 V, @ Steady State)
DEVICE MARKING
S5N03Z
Device
MMSF5N03ZR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 1
4273
MMSF5N03Z
Characteristic
Symbol
Min
Typ
Max
Unit
30
35
0.03
0.15
2.0
10
1.3
5.0
1.0
2.0
5.5
3.0
22
30
30
40
gFS
4.0
9.5
Mhos
Ciss
750
1500
pF
Coss
340
680
Crss
45
90
td(on)
40
80
tr
90
180
td(off)
470
940
tf
170
340
td(on)
120
240
tr
350
700
td(off)
430
860
tf
140
280
QT
34
48
Q1
3.5
Q2
9.5
Q3
6.5
0.83
0.67
1.6
trr
110
ta
22
tb
90
QRR
0.17
OFF CHARACTERISTICS
(Cpk 2.0)

(1) (3)
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
Adc
(Cpk 2.0)

(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
(Cpk 2.0)
(1) (3)
(1) (3)
(1)
VGS(th)
Vdc
RDS(on)
mV/C
m
Input Capacitance
Output Capacitance
(VDS = 24 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDS = 15 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc, RG = 6 ) (1)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 5.0 Adc,

VGS = 4.5 Vdc, RG = 6 ) (1)
Fall Time
Gate Charge
((VDS = 24 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc) (1)

(IS = 5.0 Adc, VGS = 0 Vdc) (1)
(IS = 5.0 Adc, VGS = 0 Vdc, TJ = 125C)
(IS = 5
5.0
0 Ad
Adc, VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (1)
VSD
ns
ns
nC
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4274
MMSF5N03Z
10
TJ = 25C
VDS 10 V
3.5 V
VGS = 10 V
4.5 V
3.8 V
10
3.3 V
4
3.1 V
2
4
100C
25C
2.7 V
0
0.4
0.8
TJ = 55C
1.6
1.2
1.8
2.6
3.4
ID = 2.5 A
TJ = 25C
0.08
0.06
0.04
0.02
4
6
8
10
3.8
0.05
TJ = 25C
0.04
VGS = 4.5
0.03
10 V
0.02
0.01
0
0
10


and Gate Voltage
2.0
1000
VGS = 0 V
VGS = 10 V
ID = 2.5 A
1.5
2.2
0.1
1.0
TJ = 125C
100
100C
10
0.5
0
50
25
25
50
75
100
125
150
10
15
20
25
30

with Temperature

versus Voltage
4275
MMSF5N03Z

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2500
TJ = 25C
VGS = 0 V
C, CAPACITANCE (pF)
2000
Ciss
1500
1000
Coss
500
Crss
0
12
18
24
30
4276
24
QT
20
10
8
16
VDS
VGS
12
6
Q1
Q2
8
ID = 5 A
TJ = 25C
Q3
0
10
15
20
25
1000
t, TIME (ns)
12
MMSF5N03Z
td(off)
tf
100
tr
td(on)
0
35
30
VDD = 15 V
ID = 5 A
VGS = 10 V
TJ = 25C
10
10

100


these losses.
5
snappy.
VGS = 0 V
TJ = 25C
0.5
0.6
0.7
0.8
0.9
4277
MMSF5N03Z
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
500
VGS = 15 V
SINGLE PULSE
TC = 25C
10

100
100 s
1 ms
10 ms
0.1
0.01
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
ID = 15 A
400
300
200
100
0
10

Safe Operating Area
4278
100
25
50
75
100
125
150

MMSF5N03Z

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0163
0.0652
0.1988
0.0307 F
0.1668 F
0.5541 F
0.6411
0.9502
0.01
0.01
1.9437 F
72.416 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4279
MOTOROLA
Designer's
Data Sheet
MMSF7N03HD

SINGLE TMOS
POWER MOSFET
8.0 AMPERES
30 VOLTS
RDS(on) = 0.028 OHM

voltage transients.
D
SO8
G
S
NC
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View

Rating
Symbol
Value
Unit
VDSS
VDGR
VGS
30
Vdc
30
Vdc
20
Vdc

ID
ID
IDM
PD
8.2
5.6
50
Adc
2.5
Watts
TJ, Tstg
EAS
55 to 150
450
mJ
RJA
50
C/W
TL
260

Apk
DEVICE MARKING
S7N03
Device
MMSF7N03HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
2500 units
REV 2
4280
MMSF7N03HD
Characteristic
Symbol
Min
Typ
Max
Unit
30
41
0.02
1.0
10
100
1.0
1.5
4.0
2.0
0.023
0.029
0.028
0.040
gFS
3.0
12
Mhos
Ciss
931
1190
pF
Coss
371
490
Crss
89
120
td(on)
15
30
tr
93
185
td(off)
35
70
tf
40
80
td(on)
9.0
tr
53
td(off)
56
tf
39
QT
30
43
Q1
3.0
Q2
7.5
Q3
6.0
0.82
0.69
1.0
trr
32
ta
24
tb
8.0
QRR
0.045
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 7.0 Adc)
(VGS = 4.5 Vdc, ID = 3.5 Adc)
RDS(on)
Vdc
mV/C
Ohms
Input Capacitance
Output Capacitance
(VDS = 24 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,

VGS = 4.5
4 5 Vdc,
Vdc
RG = 9.1 )
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
S Fi
See
Figure 8
((VDS = 16 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc)

(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125C)
S Figure
See
Fi
15
((IS = 7.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
ns
nC
Vdc
ns

4281
MMSF7N03HD
7
VGS = 10 V
4.5 V
3.9 V
3.7 V
6
5
2.9 V
3.5 V
3.3 V
3.1 V
4
3
VDS 10 V
TJ = 25C
TJ = 25C
2.7 V
2
2.5 V
6
5
4
TJ = 100C
3
2
25C
1
55C
0.25
0.5
0.75
1.25
1.5
1.75
0.5
0.4
0.3
0.2
0.1
0
2
10
3.5
ID = 3.5 A
TJ = 25C
0.05
TJ = 25C
0.04
VGS = 4.5 V
0.03
10 V
0.02
0.01
0
10
15


and Gate Voltage
10000
VGS = 0 V
VGS = 10 V
ID = 3.5 A
TJ = 125C
1000
1.5
0.5
4282
2.5
0.6
0
50
0
1.5

(NORMALIZED)
100
100C
10
25C
1
25
25
50
75
100
125
150
0.1
10
15
20
25

Temperature

30
MMSF7N03HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
4000
C, CAPACITANCE (pF)
3500
3000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
2500
2000 Crss
1500
Ciss
1000
Coss
500
0
10
Crss
5
0
VGS
5
10
VDS
15
20
25
30
4283
12
24
QT
10
1000
VDD = 10 V
ID = 5 A
VGS = 10 V
TJ = 25C
16
6
Q1
12
ID = 5 A
TJ = 25C
Q2
4
VDS
Q3
0
0
12
16
20
24
28
t, TIME (ns)
20
VGS
MMSF7N03HD
100
td(off)
tf
tr
td(on)
10
1
1
32
10
100



these losses.
snappy.
VGS = 0 V
TJ = 25C
6
5
4
3
2
1
0
0.5
0.6
0.7
0.8
0.9
4284
MMSF7N03HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
480
10
VGS = 10 V
SINGLE PULSE
TC = 25C

100
10s
100 s
1 ms
10 ms
1
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
280
240
200
160
120
80
40
0
100

Safe Operating Area
ID = 9 A
I pk = 9 A
L = 4 mH
440
400
360
320
25
50
75
100
125
150

4285
MMSF7N03HD

THERMAL RESISTANCE
10
0.1
D = 0.5
0.2
0.1
0.05
0.02
Chip
0.0163
0.0652
0.1988
0.0307 F
0.1668 F
0.5541 F
0.6411
0.9502
0.01
0.01
1.9437 F
72.416 F
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Ambient
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4286
MOTOROLA
Power Products Division
Advance Information
MPIC2111
HALF-BRIDGE DRIVER
The MPIC2111 is a high voltage, high speed, power MOSFET and IGBT driver
with dependent high and low side referenced output channels designed for half
bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard
CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. Internal deadtime is provided to
avoid shootthrough in the output halfbridge. The floating channel can be used to
drive an Nchannel power MOSFET or IGBT in the high side configuration which
operates from 10 to 600 volts.
HALFBRIDGE DRIVER
Floating Channel Designed for Bootstrap Operation

8
Fully Operational to +600 V
Tolerant to Negative Transient Voltage

dV/dt Immune
P SUFFIX
PLASTIC PACKAGE
CASE 62605
Gate Drive Supply Range from 10 to 20 V

Undervoltage Lockout for Both Channels
CMOS Schmitttriggered Inputs with Pulldown
Matched Propagation Delay for Both Channels
Internally Set Deadtime
High Side Output in Phase with Input
PRODUCT SUMMARY
VOFFSET
600 V MAX
IO+/
200 mA/420 mA
VOUT
10 20 V
ton/off (typical)
130 & 90 ns
Deadtime (typical)
700 ns
D SUFFIX
PLASTIC PACKAGE
CASE 75105
(SO8)
Device
Package
MPIC2111D
SOIC
MPIC2111P
PDIP
PIN CONNECTIONS
(TOP VIEW)
VCC 1
8 VB
VCC 1
8 VB
IN 2
7 HO
IN 2
7 HO
COM 3
6 VS
COM 3
6 VS
LO 4
5
8 LEADS DIP
MPIC2111P
LO 4
5
8 LEAD SOIC
MPIC2111D
This document contains information on a new product. Specifications and information herein are subject
to change without notice.
REV 1
4287
MPIC2111
SIMPLIFIED BLOCK DIAGRAM
VB
UV
DETECT
HV
LEVEL
SHIFT
DEAD
TIME
PULSE
FILTER
R
R
S
Q
HO
VS
PULSE
GEN
IN
UV
DETECT
VCC
LO
DEAD
TIME
COM
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute
voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Rating
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply
Su ly Voltage
Low Side Output Voltage
L i IInput V
Logic
Voltage
l
Allowable Offset Supply Voltage Transient
Symbol
Min
Max
Unit
VB
VS
VHO
VCC
VLO
VIN
0.3
VB25
VS0.3
03
0.3
0.3
0.3
0.3
03
625
VB+0.3
VB+0
+0.3
3
25
VCC+0.3
VCC+0.3
03
VDC
dVS/dt
50
V/ns
*Package Power Dissipation @ TC +25C
(8 Lead DIP)
(8 Lead SOIC)
PD
1.0
0.625
Watt
(8 Lead DIP)
(8 Lead SOIC)
RJA
125
200
C/W
Tj, Tstg
55
150
TL
260
Operating and Storage Temperature

Lead Temperature for Soldering Purposes, 10 seconds
RECOMMENDED OPERATING CONDITIONS

The Input/Output logic timing Diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15 V differential.
VB
VS+10
VS+20
VS
Note 1
600
VHO
VS
VB
Low Side Fixed Supply Voltage
VCC
10
20
VLO
VCC
Logic Input Voltage
VIN
VCC
40
125
Ambient Temperature
TA
Note 1: Logic operational for VS of 5 to +600 V. Logic state held for VS of 5 V to VBS.
4288
mA
MPIC2111
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
STATIC ELECTRICAL CHARACTERISTICS

VBIAS (VCC, VBS) = 15 V unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters
are referenced to COM and are applicable to the respective output leads: HO or LO.
Logic 1 Input Voltage for HO & Logic 0 Input Voltage for LO @ VCC = 10 V
VIH
6.4
VIH
9.5
VIH
12.6
VIL
3.8
VIL
6.0
VIL
8.3
High Level Output Voltage, VBIASVO @ IO = 0 A
VOH
100
Low Level Output Voltage, VO @ IO = 0 A
VOL
100
Offset Supply Leakage Current @ VB = VS = 600 V
ILK
50
Quiescent VBS Supply Current @ VIN = 0 V or VCC
IQBS
50
Quiescent VCC Supply Current @ VIN = 0 V or VCC
IQCC
70
Logic 1 Input Bias Current @ VIN = 15 V
IIN+
20
40
IIN
1.0
VBS Supply Undervoltage Positive Going Threshold
VBSUV+
8.5
VBS Supply Undervoltage Negative Going Threshold
VBSUV
8.2
VCC Supply Undervoltage Positive Going Threshold
VCCUV+
8.6
VCC Supply Undervoltage Negative Going Threshold
VCCUV
8.2
Output High Short Circuit Pulsed Current @ VOUT = 0 V, PW 10 s
IO+
200
250
Output Low Short Circuit Pulsed Current @ VOUT = 15 V, PW 10 s
IO
420
500
TurnOn Propagation Delay @ VS = 0 V
ton
850
TurnOff Propagation Delay @ VS = 600 V
toff
150
TurnOn Rise Time @ CL = 1000 pF
tr
80
TurnOff Fall Time @ CL = 1000 pF
tf
40
Deadtime, LS TurnOff to HS TurnOn & HS TurnOff to LS TurnOn
DT
700
Delay Matching, HS & LS TurnOn/Off
MT
30
VDC
mV
A
mA
DYNAMIC ELECTRICAL CHARACTERISTICS

VBIAS (VCC, VBS) = 15 V unless otherwise specified
ns
TYPICAL CONNECTION
10 TO 600 V
VCC
IN
VCC
VB
IN
HO
COM
VS
TO
LOAD
LO
4289
MPIC2111
LEAD DEFINITIONS
Symbol
Lead Description
IN
Logic Input for High Side and Low Side Gate Driver Outputs (HO & LO), In Phase with HO
VB
High Side Floating Supply
HO
High Side Gate Drive Output
VS
High Side Floating Supply Return
VCC
Low Side Supply
LO
Low Side Gate Drive Output
COM
Logic and Low Side Return
IN (LO)
IN
50%
50%
IN (HO)
tf
tr
HO
ton
toff
90%
LO
HO
LO
Figure 1. Input / Output Timing Diagram
10%
90%
10%
Figure 2. Switching Time Waveform

Definitions
50%
50%
IN
90%
HO
10%
DT
LO
90%
10%
Figure 3. Deadtime Waveform Definitions
4290
MOTOROLA
MPIC2112
HIGH AND LOW SIDE DRIVER

with independent high and low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction.
Logic inputs are compatible with standard CMOS or LSTTL outputs. The output
drivers feature a high pulse current buffer stage designed for minimum driver
crossconduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an Nchannel power
MOSFET or IGBT in the high side configuration which operates from 10 to 600
volts.
HIGH AND LOW

SIDE DRIVER
14
1
P SUFFIX
PLASTIC PACKAGE
CASE 64606

dV/dt Immune
16

Separate Logic Supply
DW SUFFIX
PLASTIC PACKAGE
CASE 751G02
SOIC WIDE
Operating Supply Range from 5 to 20 V

Logic and Power Ground Operating Offset Range from 5 to +5 V
Cycle by Cycle Edgetriggered Shutdown Logic
Device

Outputs in Phase with Inputs
Package
MPIC2112DW
SOIC WIDE
MPIC2112P
PDIP
PRODUCT SUMMARY
VOFFSET
600 V MAX
IO+/
200 mA/400 mA
VOUT
10 20 V
ton/off (typical)
125 & 105 ns
Delay Matching
30 ns
PIN CONNECTIONS
(TOP VIEW)
8
9
10
11
HO
VDD
HIN
LIN
13
VSS
6
5
4
SD
12
14
VB
VS
VCC
COM
LO
3
2
1
HO
10
VB
VS
11
12
VDD
HIN
13
SD
14
LIN
15
VSS
16
6
5
4
VCC
COM
LO
14 LEADS PDIP MPIC2112P

16 LEADS SOIC (WIDE BODY)
MPIC2112DW
4291
MPIC2112
VB
VDD
UV
DETECT
HV
LEVEL
SHIFT
R Q
S
VDD/VCC
LEVEL
SHIFT
HIN
R
R
S
PULSE
FILTER
Q
HO
VS
PULSE
GEN
SD
VCC
UV
DETECT
VDD/VCC
LEVEL
SHIFT
LIN
S
LO
R Q
DELAY
VSS
COM

conditions.
Rating
Symbol
Min
Max
Unit
High Side Floating Absolute Voltage

High
g Side Floating
g Supplyy Offset Voltage
g
High
g Side Floating
g Output Voltage
g
Low Side Fixed Supplyy Voltage
g
Logic Supply Voltage
L i S
l Off
l
Logic
Supply
Offset V
Voltage
L i IInputt V
Logic
Voltage
lt
(HIN
(HIN, LIN & SD)
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
0.3
0.3
VB25
VS0.3
0.3
0.3
0.3
VCC25
VSS0.3
03
625
VB+0.3
VB+0.3
25
VCC+0.3
VSS+25
VCC+0.3
VDD+0.3
03
VDC
dVS/dt
50
V/ns
*Package Power Dissipation @ TA +25C
(14 Lead DIP)

(16 SOICWIDE)
PD
1.6
1.25
Watt
(14 Lead DIP)

(16 SOICWIDE)
RJA
75
100
C/W
Tj, Tstg
55
150
TL
260


The Input/Output logic timing Diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15 V differential.
VB
VS+10
VS+20
VS
Note 1
600
VHO
VS
VB
VCC
10
20
VLO
VCC
VDD
VSS+5
VSS+20
Logic Supply Offset Voltage
VSS
Logic Input Voltage (HIN, LIN & SD)
VIN
VSS
VDD
TA
40
125
Ambient Temperature
4292
MPIC2112
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
STATIC ELECTRICAL CHARACTERISTICS SUPPLY CHARACTERISTICS

VBIAS (VCC, VBS, VDD) = 15 V and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and are
applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are referenced to COM or VSS and are applicable to
the respective output leads: HO or LO.
Logic 1 Input Voltage
VIH
9.5
VIL
6.0
High Level Output Voltage, VBIASVO @ VIN = VIH, IO = 0 A
VOH
100
Low Level Output Voltage, VO @ VIN = VIL, IO = 0 A
VOL
100
ILK
50
Quiescent VBS Supply Current @ VIN = 0 V or VDD
IQBS
25
60
Quiescent VCC Supply Current @ VIN = 0 V or VDD
IQCC
80
180
Quiescent VDD Supply Current @ VIN = 0 V or VDD
IQDD
2.0
5.0
IIN+
20
40
IIN
1.0
VBSUV+
7.4
9.6
VBSUV
7.0
9.2
VCCUV+
7.6
9.6
VCCUV
7.2
9.2
Output High Short Circuit Pulsed Current

@ VOUT = 0 V, VIN = 15 V, PW 10 s
IO+
200
250
Output Low Short Circuit Pulsed Current

@ VOUT = 15 V, VIN = 0 V, PW 10 s
IO
420
500
mV
mA

VBIAS (VCC, VBS, VDD) = 15 V and VSS = COM unless otherwise specified. TA = 25C.
ton
125
180
toff
105
160
Shutdown Propagation Delay @ VS = 600 V
tsd
105
160
tr
80
130
tf
40
65
MT
30

ns
TYPICAL CONNECTION
10 TO 600 V
VDD
HIN
VDD
HIN
SD
SD
LIN
LIN
VSS
VCC
VSS
HO
VB
VS
TO
LOAD
VCC
COM
LO
4293
MPIC2112
LEAD DEFINITIONS
Symbol
Lead Description
VDD
Logic Supply
HIN
Logic Input for High Side Gate Driver Output (HO), In Phase
SD
Logic Input for Shutdown
LIN
Logic Input for Low Side Gate Driver Output (LO), In Phase
VSS
Logic Ground
VB
HO
VS
VCC
Low Side Supply
LO
COM
Low Side Return
HIN
LIN
50%
HIN
LIN
50%
tr
ton
SD
90%
HO
LO
50%
SD
50%
LO
tsd
HO
LO
10%

Definitions
HIN
LIN
50%
90%
10%
HO
LO
tf
toff
HO
10%
90%
MT
MT
90%
LO
4294
HO
Figure 4. Delay Matching Waveform

Definitions
MOTOROLA
MPIC2113
Advance Information
HIGH AND LOW SIDE DRIVER
HIGH AND LOW

SIDE DRIVER
with independent high and low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction.
Logic inputs are compatible with standard CMOS or LSTTL outputs. The output
drivers feature a high pulse current buffer stage designed for minimum driver
crossconduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an Nchannel power
MOSFET or IGBT in the high side configuration which operates from 10 to 600
volts.
14
1
P SUFFIX
PLASTIC PACKAGE
CASE 64606

16
dV/dt Immune

DW SUFFIX
PLASTIC PACKAGE
CASE 751G02
SOIC WIDE

Separate Logic Supply
Operating Supply Range from 5 to 20 V
Logic and Power Ground Operating Offset Range from 5 to +5 V
Device
Cycle by Cycle Edgetriggered Shutdown Logic

Package
MPIC2113DW
SOIC WIDE
MPIC2113P
PDIP
Outputs In Phase with Inputs

PRODUCT SUMMARY
VOFFSET
600 V MAX
IO+/
2 A/2 A
VOUT
10 20 V
ton/off (typical)
120 & 94 ns
Delay Matching
10 ns
PIN CONNECTIONS
(TOP VIEW)
8
9
10
VDD
HIN
11
SD
12
LIN
13
VSS
14
HO
VB
VS
6
5
4
VCC
COM
LO
14 LEADS PDIP MPIC2113P
HO
10
VB
VS
11
12
VDD
HIN
13
SD
14
LIN
15
VSS
16
6
5
4
VCC
COM
LO
16 LEADS SOIC (WIDE BODY)

MPIC2113DW
4295
MPIC2113
VB
VDD
UV
DETECT
HV
LEVEL
SHIFT
R Q
S
VDD/VCC
LEVEL
SHIFT
HIN
R
R
S
PULSE
FILTER
Q
HO
VS
PULSE
GEN
SD
VCC
UV
DETECT
VDD/VCC
LEVEL
SHIFT
LIN
S
LO
R Q
DELAY
VSS
COM

conditions.
Symbol
Min
Max
Unit

High
g Side Floating
g
g Side Floating
g Output Voltage
g
High
Low Side Fixed Supplyy Voltage
g
L i S
Logic
Supply
l Off
Offset V
Voltage
l
L i IInputt V
lt
(HIN
Logic
Voltage
(HIN, LIN & SD)
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
0.3
0.3
VB25
VS0.3
0.3
0.3
0.3
VCC25
03
VSS0.3
625
VB+0.3
VB+0.3
25
VCC+0.3
VSS+25
VCC+0.3
03
VDD+0.3
VDC
dVS/dt
50
V/ns
Rating
(14 Lead DIP)

(16 SOICWIDE)
PD
1.6
1.25
Watt
(14 Lead DIP)

(16 SOICWIDE)
RJA
75
100
C/W
Tj, Tstg
55
150
TL
260


The Input/Output logic timing Diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15 V differential.
VB
VS+10
VS+20
VS
Note 1
600
VHO
VS
VB
VCC
10
20
VLO
VCC
VDD
VSS+5
VSS+20
Logic Supply Offset Voltage
VSS
Logic Input Voltage (HIN, LIN & SD)
VIN
VSS
VDD
TA
40
125
Ambient Temperature
4296
MPIC2113
Characteristic
Symbol
Min
Typ
Max
Unit
STATIC ELECTRICAL CHARACTERISTICS SUPPLY CHARACTERISTICS

VBIAS (VCC, VBS, VDD) = 15 V and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and are
applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are referenced to COM or VSS and are applicable to
the respective output leads: HO or LO.
VIH
9.5
VIL
6.0
High Level Output Voltage, VBIASVO @ VIN = VIH, IO = 0 A
VOH
1.2
VOL
0.1
ILK
50
Quiescent VBS Supply Current @ VIN = 0 V or VDD
IQBS
125
230
Quiescent VCC Supply Current @ VIN = 0 V or VDD
IQCC
180
340
Quiescent VDD Supply Current @ VIN = 0 V or VDD
IQDD
15
30
IIN+
20
40
IIN
1.0
VBSUV+
7.5
9.7
VBSUV
7.0
9.4
VCCUV+
7.4
9.6
VCCUV
7.0
9.4

@ VOUT = 0 V, VIN = 15 V, PW 10 s
IO+
2.0
2.5

@ VOUT = 15 V, VIN = 0 V, PW 10 s
IO
2.0
2.5

VBIAS (VCC, VBS, VDD) = 15 V and VSS = COM unless otherwise specified. TA = 25C.
ton
120
150
toff
94
125
Shutdown Propagation Delay @ VS = 600 V
tsd
110
140
tr
25
35
tf
17
25
MT
10

ns
TYPICAL CONNECTION
10 TO 600 V
VDD
HIN
VDD
HIN
SD
SD
LIN
LIN
VSS
VCC
VSS
HO
VB
VS
TO
LOAD
VCC
COM
LO
4297
MPIC2113
LEAD DEFINITIONS
Symbol
Lead Description
VDD
Logic Supply
HIN
Logic Input for High Side Gate Driver Output (HO), In Phase
SD
Logic Input for Shutdown
LIN
Logic Input for Low Side Gate Driver Output (LO), In Phase
VSS
Logic Ground
VB
HO
VS
VCC
Low Side Supply
LO
COM
Low Side Return
HIN
LIN
50%
HIN
LIN
50%
tr
ton
SD
90%
HO
LO
50%
SD
50%
LO
tsd
HO
LO
10%

Definitions
HIN
LIN
50%
90%
10%
HO
LO
tf
toff
HO
10%
90%
MT
MT
90%
LO
Figure 3. Shutdown Waveform Definitions
4298
HO
Figure 4. Delay Matching Waveform

Definitions
MOTOROLA
MPIC2117
Advance Information
SINGLE CHANNEL DRIVER
The MPIC2117 is a high voltage, high speed, power MOSFET and IGBT driver.
Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The
output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side or low side configuration which operates from
10 to 600 volts.
SINGLE CHANNEL DRIVER

dV/dt Immune

P SUFFIX
PLASTIC PACKAGE
CASE 62605
Undervoltage Lockout
CMOS Schmitttriggered Input with Pulldown
Output In Phase with Input
PRODUCT SUMMARY
VOFFSET
600 V MAX
IO+/
200 mA/420 mA
VOUT
10 20 V
ton/off (typical)
125 & 105 ns
D SUFFIX
PLASTIC PACKAGE
CASE 75105
(SO8)
Device
Package
MPIC2117D
SOIC
MPIC2117P
PDIP
PIN CONNECTIONS
(TOP VIEW)
VCC 1
8 VB
VCC 1
8 VB
IN 2
7 HO
IN 2
7 HO
COM 3
6 VS
COM 3
6 VS
5
8 LEADS DIP
MPIC2117P
5
8 LEAD SOIC
MPIC2117D
REV 1
4299
MPIC2117
VCC
VB
UV
DETECT
HV
LEVEL
SHIFT
IN
PULSE
FILTER
R
R
S
Q
HO
VS
PULSE
GEN
UV
DETECT
COM

conditions.
Rating
High
g Side Floating
g Supply
y Absolute Voltage
g
Logic
Supply
Voltage
L i S
l V
lt
Logic Input Voltage
Symbol
Min
Max
Unit
VB
VS
VHO
VCC
VIN
0.3
VB25
VS0.3
0.3
03
03
0.3
625
VB+0.3
VB+0.3
25
3
VCC+0
+0.3
VDC
dVS/dt
50
V/ns
(8 Lead DIP)
(8 Lead SOIC)
PD
1.0
0.625
Watt
(8 Lead DIP)
(8 Lead SOIC)
RJA
125
200
C/W
Tj, Tstg
55
150
TL
260


VB
VS+10
VS+20
VS
Note 1
600
VHO
VS
VB
VCC
10
20
Logic Input Voltage
VIN
VCC
Ambient Temperature
TA
40
125
4300
MPIC2117
Characteristic
Symbol
Min
Typ
Max
Unit

VBIAS (VCC, VBS) = 15 V unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters
are referenced to COM and are applicable to the respective output leads: HO or LO.
Logic 1 Input Voltage @ VCC = 10 V
VIH
6.4
VIH
9.5
VIH
12.6
VIL
3.8
VIL
6.0
VIL
8.3
High Level Output Voltage, VBSVO @ VIN = VIH, IO = 0 A
VOH
100
VOL
100
ILK
50
Quiescent VBS Supply Current @ VIN = 0 V or VCC
IQBS
50
Quiescent VCC Supply Current @ VIN = 0 V or VCC
IQCC
70
IIN+
20
40
IIN
1.0
VBSUV+
8.5
VBSUV
8.2
VCCUV+
8.6
VCCUV
8.2

@ VOUT = 0 V, VIN = 15 V, PW 10 s
IO+
200
250

@ VOUT = 15 V, VIN = 0 V, PW 10 s
IO
420
500
ton
125
toff
105
tr
80
tf
40
VDC
mV
A
mA

VBIAS (VCC, VBS) = 15 V unless otherwise specified
ns
TYPICAL CONNECTION
VCC
IN
VCC
VB
IN
HO
COM
VS
4301
MPIC2117
LEAD DEFINITIONS
Symbol
VCC
IN
Lead Description
Logic Supply
Logic Input for High Side Gate Driver Outputs (HO), In Phase with HO
COM
Logic Ground
VB
HO
VS
50%
IN
50%
IN
ton
tr
90%
HO
HO
4302
10%
tf
toff
90%
10%

Definitions
MOTOROLA
Advance Information
3-PHASE BRIDGE DRIVER

with three independent high side and low side referenced output channels for
3Phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with 5 V CMOS or LSTTL outputs. A
ground referenced operational amplifier provides an analog feedback of bridge
current via an external current sense resistor. A current trip function which terminates all six outputs is also derived from this resistor. An open drain FAULT signal
is provided to indicate that an overcurrent or undervoltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for
minimum driver crossconduction. Propagation delays are matched to simplify use
in high frequency applications.
The floating channels can be used to drive Nchannel power MOSFET or
IGBTs in the high side configuration which operate from 10 to 600 volts.
MPIC2130
3PHASE
BRIDGE DRIVER
28
1
P SUFFIX
PLASTIC PACKAGE
CASE 71002

dV/dt Immune
Undervoltage Lockout for All Channels
Overcurrent Shut Down Turns Off All Six Drivers
Independent Halfbridge Drivers
PIN CONNECTIONS
1
VCC
VB1 28
HIN1
HO1 27
HIN2
VS1 26
HIN3
25
LIN1
VB2 24
LIN2
HO2 23
LIN3
VS2 22
FAULT
ITRIP
VB3 20
10
CAO
HO3 19
11
CA
VS3 18
12
VSS
17
13
VSO
LO1 16
14
LO3
LO2 15
Matched Propagation Delay for All Channels

Outputs Out of Phase with Inputs
PRODUCT SUMMARY
VOFFSET
600 V MAX
IO+/
200 mA/420 mA
VOUT
10 20 V
ton/off (typical)
675 & 425 ns
Deadtime (typical)
2.5 ms
21
(TOP VIEW)
Device
Package
MPIC2130P
PDIP
REV 1
4303
MPIC2130
H1
INPUT
SIGNAL
L1
GENERATOR
HIN1
HIN2
PULSE
GENERATOR
LEVEL
SHIFTER
SET
PULSE
GENERATOR
LEVEL
SHIFTER
SET
PULSE
GENERATOR
LEVEL
SHIFTER
SET
VB1
LATCH
DRIVER
UV
RESET DETECTOR
VS1
HIN3
LIN1
H2
INPUT
SIGNAL
L2
GENERATOR
LIN2
LIN3
FAULT
CLEAR
LOGIC
H3
INPUT
SIGNAL
L3
GENERATOR
FAULT
LOGIC
C
HO1
VB2
LATCH
DRIVER
UV
RESET DETECTOR
HO2
VS2
VB3
LATCH
DRIVER
UV
RESET DETECTOR
HO3
VS3
VCC
0.5 V
CURRENT
COMPARATOR
CAO
CURRENT
AMP
DRIVER
LO1
DRIVER
LO2
DRIVER
LO3
UNDER
VOLTAGE
DETECTOR
ITRIP
CA
VSS
VSO

voltages referenced to VSS. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Rating
Symbol
Min
Max
Unit

Su ly Offset Voltage
Fi d Supply
Fixed
S
l V
Voltage
lt
Low Side Driver Return
Logic Input
In ut Voltage (HIN
(HIN,, LIN,
LIN , & ITRIP)
Fault Output Voltage
Amplifier
Am
lifier Output
Out ut Voltage
Amplifier Inverting Input Voltage
VB1,2,3
VS1,2,3
S1 2 3
VHO1,2,3
VCC
VSO
VLO1,2,3
VIN
FAULT
CAO
CA
0.3
VB1,2,3
B1 2 325
VS1,2,30.3
0.3
03
VCC0.3
VSO0.3
0.3
0.3
0.3
0 3
0.3
0.3
625
VB1,2,3
+0 3
B1 2 3+0.3
VB1,2,3+0.3
25
VCC+0.3
VCC+0.3
VCC+0.3
VCC+0.3
VCC+0.3
+0 3
VCC+0.3
VDC
dVS/dt
50
V/ns
PD
1.5
Watt
Tj, Tstg
55
150
RJA
83
C/W
TL
260

4304
MPIC2130
VB1,2,3
VS1,2,3+10
VS1,2,3+20
VS1,2,3
Note 1
VSO+600
VHO1,2,3
VS1,2,3
VB1,2,3
Fixed Supply Voltage
VCC
10
20
VSO
VLO1,2,3
VSO
VCC
VIN
VSS

Logic Input Voltage (HIN, LIN, & ITRIP)
FAULT
VSS
VCC
Amplifier Output Voltage
CAO
VSS
Amplifier Inverting Input Voltage
CA
VSS
40
125
Ambient Temperature
TA
Note 1: Logic operational for VS of 5 V to +600 V. Logic state held for VS of VSO5 V to VSOVBS.

Characteristic
Symbol
Min
Typ
Max
Unit

VBIAS (VCC, VBS1,2,3) = 15 V and VSO = VSS unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and are
applicable to all six channels (HS1,2,3 & LS1,2,3). The VO and IO parameters are referenced to VSO1,2,3 and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
Logic 0 Input Voltage (OUT = LO)
VIH
2.2
Logic 1 Input Voltage (OUT = HI)
VIL
0.8
VIT,TH+
400
580
mV
High Level Output Voltage, VBIASVO @ VIN = 0 V, IO = 0 A
VOH
100
mV
Low Level Output Voltage, VO @ VIN = 5 V, IO = 0 A
VOL
100
mV
Offset Supply Leakage Current @ VB1,2,3 = VS1,2,3 = 600 V
ILK
50
Quiescent VBS Supply Current @ VIN = 0 V or 5 V
IQBS
15
30
Quiescent VCC Supply Current @ VIN = 0 V or 5 V
ITRIP Input Positive Going Threshold
IQCC
3.0
4.0
mA
Logic 1 Input Bias Current (OUT = HI) @ VIN = 0 V
IIN+
400
500
Logic 0 Input Bias Current (OUT = LO) @ VIN = 5 V
IIN
200
320
High ITRIP Bias Current @ ITRIP = 5 V
ITRIP+
75
150
Low ITRIP Bias Current @ ITRIP = 0 V
ITRIP
100
nA
VBSUV+
8.0
9.2
VBSUV
7.6
8.8
VCCUV+
8.3
9.7
VCCUV
8.0
9.4
FAULT Low On Resistance
Ron,FLT
55
75
Output High Short Circuit Pulsed Current @ Vout = 0 V, Vin = 0 V, PW 10 s
IO+
200
250
mA
Output Low Short Circuit Pulsed Current @ Vout = 15 V, Vin = 5 V, PW 10 s
IO
420
500
mA
Amplifier Input Offset Voltage @ VSO = CA = 0.2
VOS
30
mV
CA Input Bias Current @ CA = 2.5 V
ICA
4.0
nA
CMRR
60
80
dB
Amplifier Common Mode Rejection Ratio @ VSO = CA = 0.1 V & 5 V
4305
MPIC2130
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit

VBIAS (VCC, VBS1,2,3) = 15 V and VSO = VSS unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and are
applicable to all six channels (HS1,2,3 & LS1,2,3). The VO and IO parameters are referenced to VSO1,2,3 and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
Amplifier Power Supply Rejection Ratio
@ VSO = CA=0.2 V, VCC = 10 & 20 V
PSRR
55
75
dB
Amplifier High Level Output Voltage @ CA = 0 V, VSO = 1 V
VOH,Amp
5.0
5.4
Amplifier Low Level Output Voltage @ CA = 1 V, VSO = 0 V
VOL,Amp
20
mV
Amplifier Output Source Current @ CA = 0 V, VSO = 1 V, CAO = 4 V
ISRC,Amp
2.3
4.0
mA
Amplifier Output Sink Current @ CA = 1 V, VSO = 0 V, CAO = 2 V
ISNK,Amp
1.0
2.1
mA
Amplifier Output High Short Circuit Current

@ CA = 1 V, VSO = 5 V, CAO = 0 V
IO+,Amp
4.5
6.5
mA
Amplifier Output Low Short Circuit Current

@ CA = 5 V, VSO = 0 V, CAO = 5 V
IO,Amp
3.2
5.2
mA
Symbol
Min
Typ
Max
Unit

Characteristic

VBIAS (VCC, VBS1,2,3) = 15 V, VSO1,2,3 = VSS and CL = 1000 pF unless otherwise specified. TA = 25C.
TurnOn Propagation Delay @ VIN = 0 & 5 V, VS1,2,3 = 0 V to 600 V
ton
500
850
ns
TurnOff Propagation Delay @ VIN = 0 & 5 V, VS1,2,3 = 0 V to 600 V
toff
300
550
ns
TurnOn Rise Time @ VIN = 0 & 5 V, VS1,2,3 = 0 V to 600 V
tr
80
125
ns
TurnOff Fall Time @ VIN = 0 & 5 V, VS1,2,3 = 0 V to 600 V
tf
35
55
ns
titrip
400
920
ns
ITRIP Blanking Time @ ITRIP = 1 V
tbl
400
ns
ITRIP to FAULT Propagation Delay @ VIN, VITRIP = 0 & 5 V
tflt
335
845
ns
Input Filter Time (all six inputs) @ VIN = 0 & 5 V
tflt,in
310
ns
LIN1,2,3 to FAULT Clear Time @ VIN, VITRIP = 0 & 5 V
tfltclr
6.0
12
DT
1.3
3.7
Amplifier Slew Rate (Positive)
SR+
4.4
6.2
V/s
Amplifier Slew Rate (Negative)
SR
2.4
3.2
V/s
ITRIP to Output Shutdown Propagation Delay @ VIN, VITRIP = 0 & 5 V

@ VIN = 0 & 5 V
TYPICAL CONNECTION
10 TO 600 V
VCC
HIN1,2,3
VCC
HIN1,2,3
VB1,2,3
HO1,2,3
LIN1,2,3
LIN1,2,3
VS1,2,3
FAULT
FAULT
TO
LOAD
ITRIP
CAO
CAO
CA
VSS
VSO
LO1,2,3
COM
4306
MPIC2130
LEAD DEFINITIONS
Symbol
Lead Description
HIN1,2,3
Logic Inputs for High Side Gate Driver Outputs (HO1,2,3), Out of Phase
LIN1,2,3
Logic Inputs for Low Side Gate Driver Outputs (LO1,2,3), Out of Phase
FAULT
Indicates Overcurrent, or Undervoltage Lockout (Low Side) has Occurent, Negative Logic
VCC
Logic and Low Side Fixed Supply
ITRIP
Input for Overcurrent Shut Down
CAO
Output of Current Amplifier
CA
Negative Input of Current Amplifier
VSS
Logic Ground
VB1,2,3
High Side Floating Supplies
HO1,2,3
High Side Gate Drive Outputs
VS1,2,3
High Side Floating Supply Returns
LO1,2,3
Low Side Gate Drive Outputs
VSO
Low Side Return, Positive Input of Current Amplifier
HIN
HIN
LIN
LIN
50%
ITRIP
ton
FAULT
50%
tr
90%
toff
90%
tf
HO
HO13
LO
10%
10%
LO13
HIN

Definitions
50%
LIN2
50%
50%
LIN
ITRIP
50%
FAULT
50%
50%
LO
50%
50%
LO2
HO
DT
DT
50%
tfltclr
tflt
titrip
Figure 4. Overcurrent Shutdown Waveform

Definitions
4307
MOTOROLA
MPIC2131
Advance Information
3-HIGH SIDE &

3-LOW SIDE DRIVER
with three independent high side and low side referenced output channels for
3Phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with 5 V CMOS or LSTTL outputs. A
ground referenced operational amplifier provides an analog feedback of bridge
current via an external current sense resistor. A current trip function which terminates all six outputs is also derived from an external current sense resistor. An extra shutdown input is provided for customizing the shutdown function. An open
drain FAULT signal is provided to indicate that any of shutdown conditions has occurred. The output drivers feature a high pulse current buffer stage designed for
minimum driver crossconduction. Propagation delays are matched to simplify use
in high frequency applications.
The floating channels can be used to drive Nchannel power MOSFET or
IGBTs in the high side configuration which operate from 10 to 600 volts.
3 HIGH SIDE &

3 LOW SIDE
DRIVER
28
1
P SUFFIX
PLASTIC PACKAGE
CASE 71002

dV/dt Immune
PIN CONNECTIONS

Undervoltage Lockout for All Channels
VCC
VB1 28
Independent 3 High Side & 3 Low Side Drivers
HIN1
HO1 27
Matched Propagation Delay for All Channels
HIN2
VS1 26
Outputs Out of Phase with Inputs
HIN3
25
LIN1
VB2 24
LIN2
HO2 23
LIN3
VS2 22
FAULT
Overcurrent Shut Down Turns Off All Six Drivers
PRODUCT SUMMARY
VOFFSET
600 V MAX
IO+/
200 mA/420 mA
VOUT
10 20 V
ton/off (typical)
1.4 & 0.7 ms
ITRIP
VB3 20
Delay Matching
700 ns
10
FLT+CLR
HO3 19
11
SD
VS3 18
12
VSS
17
13
COM
LO1 16
14
LO3
LO2 15
21
(TOP VIEW)
Device
Package
MPIC2131P
PDIP
REV 1
4308
MPIC2131
H1
INPUT
SIGNAL
L1
GENERATOR
HIN1
HIN2
PULSE
GENERATOR
LEVEL
SHIFTER
SET
PULSE
GENERATOR
LEVEL
SHIFTER
SET
PULSE
GENERATOR
LEVEL
SHIFTER
SET
VB1
LATCH
DRIVER
UV
RESET DETECTOR
VS1
HIN3
LIN1
H2
INPUT
SIGNAL
L2
GENERATOR
LIN2
LIN3
FLTCLR
H3
INPUT
SIGNAL
L3
GENERATOR
SD
FAULT
HO1
VB2
LATCH
DRIVER
UV
RESET DETECTOR
HO2
VS2
VB3
LATCH
DRIVER
UV
RESET DETECTOR
HO3
VS3
FAULT
LOGIC
VCC
DRIVER
LO1
DRIVER
LO2
DRIVER
LO3
UNDER
VOLTAGE
DETECTOR
VSS
ITRIP
CURRENT
COMPARATOR
0.5 V
VSS
COM

conditions.
Rating
Symbol
Min
Max
Unit
VB1,2,3
VS1,2,3
VHO1,2,3
HO1 2 3
VLO1,2,3
, ,
VCC
VSS
VIN
FAULT
0.3
VB1,2,325
25
VS1,2,3
0.3
S1 2 30.3
0.3
0.3
VCC25
VSS0.3
VSS0.3
625
VB1,2,3+0.3
03
VB1,2,3
B1 2 3+0.3
VCC+0.3
25
VCC+0.3
+0 3
VCC+0.3
VCC+0.3
VDC
dVS/dt
50
V/ns
PD
1.5
Watt
Tj, Tstg
55
150
Thermal Resistance, Junction to Ambient (8 Lead DIP)
RJA
83
C/W
TL
260

Hi h Side
High
Sid Floating
Fl ti Supply
S
l Off
Offsett V
Voltage
lt
High Side Floating Out
Output
ut Voltage
Fixed Su
Supply
ly Offset Voltage
Logic
g Input Voltage
g (HIN, LIN, FLT, CLR, SD & ITRIP)
*Package Power Dissipation @ TC +25C (28 Lead DIP)
4309
MPIC2131
VB1,2,3
VS1,2,3+10
VS1,2,3+20
VS1,2,3
Note 1
VSO+600
VHO1,2,3
VS1,2,3
VB1,2,3
VCC
10
20
VLO1,2,3
VCC
VSS
Logic Input Voltage (HIN, LIN, FLTCLR, SD & ITRIP)
VIN
VSS
FAULT
VSS
VCC
40
125


Ambient Temperature
TA
Note 1: Logic operational for VS of 5 V to +600 V. Logic state held for VS of 5 V to VBS.

Symbol
Characteristic
Min
Typ
Max
Unit

VBIAS (VCC, VBS1,2,3) = 15 V and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and are
applicable to all six channels (HS1,2,3 & LS1,2,3). The VO and IO parameters are referenced to COM and VSO1,2,3 and are applicable to
the respective output leads: HO1,2,3 or LO1,2,3.
Logic 0 Input Voltage (OUT = LO)
VIH
2.2
Logic 1 Input Voltage (OUT = HI)
VIL
0.8
Logic 0 Fault Clear Input Voltage
VFCLR,IH
2.2
Logic 1 Fault Clear Input Voltage
VFCLR,IL
0.8
SD Input Positive Going Threshold
VSD,TH+
1.8
SD Input Negative Going Threshold
VSD,TH
1.5
ITRIP Input Positive Going Threshold
VIT,TH+
485
mV
ITRIP Input Negative Going Threshold
VIT,TH
400
mV
High Level Output Voltage, VBIASVO @ VIN = 0 V, IO = 0 A
VOH
100
mV
Low Level Output Voltage, VO @ VIN = 5 V, IO = 0 A
VOL
100
mV
Offset Supply Leakage Current @ VB1,2,3 = VS1,2,3 = 600 V
ILK
50
Quiescent VBS Supply Current @ VIN = 0 V or 5 V
IQBS
30
Quiescent VCC Supply Current @ VIN = 0 V or 5 V
IQCC
3.0
mA
Logic 1 Input Bias Current (OUT = HI) @ VIN = 0 V
IIN+
190
Logic 0 Input Bias Current (OUT = LO) @ VIN = 5 V
IIN
100
High ITRIP Bias Current @ ITRIP = 5 V
ITRIP+
60
Low ITRIP Bias Current @ ITRIP = 0 V
ITRIP
50
nA
Logic 1 Fault Clear Bias Current @ FLTCLR = 0 V
IFCLR+
190
Logic 0 Fault Clear Bias Current @ FLTCLR = 5 V
IFCLR
100
Logic 1 Shut Down Bias Current @ SD = 5 V
ISD+
60
Logic 0 Shut Down Bias Current @ SD = 5 V
ISD
150
nA
VBSUV+
8.6
VBSUV
8.2
VCCUV+
9.0
VCCUV
8.7
FAULT Low On Resistance
Ron,FLT
55
Output High Short Circuit Pulsed Current @ Vout = 0 V, Vin = 0 V, PW 10 s
IO+
200
250
mA
Output Low Short Circuit Pulsed Current @ Vout = 15 V, Vin = 5 V, PW 10 s
IO
420
500
mA
4310
MPIC2131
Characteristic
Symbol
Min
Typ
Max
Unit

VBIAS (VCC, VBS1,2,3) = 15 V, VSO1,2,3 = VSS and CL = 1000 pF unless otherwise specified. TA = 25C.
TurnOn Propagation Delay @ VIN = 0 & 5 V, VS1,2,3 = 0 V to 600 V
ton
1.4
TurnOff Propagation Delay @ VIN = 0 & 5 V, VS1,2,3 = 0 V to 600 V
toff
0.7
TurnOn Rise Time @ VIN = 0 & 5 V, VS1,2,3 = 0 V to 600 V
tr
80
ns
TurnOn Fall Time @ VIN = 0 & 5 V, VS1,2,3 = 0 V to 600 V
tf
40
ns
titrip
550
ns
ITRIP Blanking Time @ ITRIP = 1 V
tbl
400
ns
ITRIP to FAULT Propagation Delay @ VIN, VITRIP = 0 & 5 V
tflt
450
ns
Input Filter Time (all six inputs) @ VIN = 0 & 5 V
tflt,in
310
ns
FLTCLR to FAULT Clear Time @ VIN, VIT, VFC = 0 & 5 V
tfltclr
450
ns
SD to OUTPUT Shutdown Propagation Delay @ VIN, VSD = 0 & 5 V
tsd
550
ns

@ VIN = 0 & 5 V
DT
700
ns
ITRIP to Output Shutdown Propagation Delay @ VIN, VITRIP = 0 & 5 V
TYPICAL CONNECTION
10 TO 600 V
VCC
HIN1,2,3
VB1,2,3
HO1,2,3
LIN1,2,3
VS1,2,3
FAULT
TO
LOAD
ITRIP
FLTCLR
SD
VSS
COM
LO1,2,3
LEAD DEFINITIONS
Symbol
Lead Description
HIN1,2,3
Logic Inputs for High Side Gate Driver Outputs (HO1,2,3), Out of Phase
LIN1,2,3
Logic Inputs for Low Side Gate Driver Outputs (LO1,2,3), Out of Phase
FLTCLR
Logic Inputs for Fault Clear
SD
Logic Input for Shut Down
FAULT
Indicates Overcurrent, Shut Down or Low Side Undervoltage Condition, Negative Logic
ITRIP
Input for Overcurrent Shut Down
VSS
Logic Ground
VB1,2,3
High Side Floating Supplies
HO1,2,3
High Side Gate Drive Outputs
VS1,2,3
High Side Floating Supply Returns
VCC
LO1,2,3
COM
Low Side Gate Drive Outputs

Low Side Return
4311
MPIC2131
HIN
HIN
LIN
LIN
ITRIP
50%
SD
tr
ton
FLTCLR
50%
90%
FAULT
toff
90%
tf
HO
HO
LO
10%
10%
LO

Definitions
LIN2
HIN
50%
50%
ITRIP
LIN
50%
50%
SD
FLTCLR
50%
LO
50%
FAULT
50%
50%
50%
HO
LO2
DT
DT
4312
tflt
titrip
50%
50%
tfltclr
tsd
Figure 4. Shutdown Waveform Definitions
MOTOROLA
Advance Information
SELF-OSCILLATING
HALF-BRIDGE DRIVER
The MPIC2151 is a high voltage, high speed, selfoscillating power MOSFET
and IGBT driver with both high side and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The frontend features a programmable oscillator which is similar
to the 555 timer. The output drivers feature a high pulse current buffer stage and an
internal deadtime designed for minimum driver crossconduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an Nchannel power MOSFET or
IGBT in the high side configuration that operates off a high voltage rail from 10 to
600 volts.
SELFOSCILLATING
HALFBRIDGE
DRIVER
8
1

P SUFFIX
PLASTIC PACKAGE
CASE 62605
dV/dt Immune
Undervoltage Lockout
Programmable Oscillator Frequency:
MPIC2151
+ 1.4 (RT )1 75W) CT
Low Side Output In Phase with RT
PRODUCT SUMMARY
VOFFSET
600 V MAX
Duty Cycle
50%
VOUT
10 20 V
tr/f (typical)
120 & 60 ns
Deadtime (typical)
1.2 s
D SUFFIX
PLASTIC PACKAGE
CASE 75105
(SO8)
PIN CONNECTIONS
VCC 1
8 VB
RT 2
7 HO
CT 3
6 VS
COM 4
5 LO
(TOP VIEW)
Device
Package
MPIC2151D
SOIC
MPIC2151P
PDIP
REV 1
4313
MPIC2151
VB
R
HV
LEVEL
SHIFT
RT
+
R
DEAD
TIME
Q
PULSE
FILTER
HO
PULSE
GEN
VS
VCC
CT
R
S
15.6 V
DEAD
TIME
UV
DETECT
LO
DELAY
COM

voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are
measured under board mounted and still air conditions.
Rating
High Side Floating Su
Supply
ly Absolute Voltage
High
g Side Floating
g
High
g Side Floating
g Output Voltage
g
g
RT Voltage
CT Voltage
Supply
y Current ((Note 1))
High Side Output Current
Low Side Output Current
RT O
Output
Currentt
t tC
*Package Power Dissipation @ TC +25C
(8 Lead DIP)
(8 Lead SOIC)

(8 Lead DIP)
(8 Lead SOIC)
Symbol
Min
Max
Unit
VB
VS
VHO
VLO
VRT
VCT
ICC
IHO
ILO
IRT
0.3
0.3
VB25
VS0.3
0.3
0.3
0.3
625
VB+0.3
VB+0.3
VCC+0.3
VCC+0.3
VCC+0.3
VDC
500
500
5.0
50
25
500
500
5.0
50
mADC
dVS/dt
50
V/ns
PD
1.0
0.625
Watt
Tj, Tstg
55
150
RJA
125
200
C/W
TL
260

The Input/Output logic timing Diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions.
VB
VS+10
VS+Vclamp
VS
600
VHO
VS
VB
VLO
VCC
Supply Current (Note 1)
ICC
5.0
mA
TA
40
125
C
Note 1: Because the MPIC2151 is designed specifically for offline supply systems, this IC contains a zener clamp structure between the chip
VCC and COM which has a nominal breakdown voltage of 15.6 V. Therefore, the IC supply voltage is normally derived by forcing current into
the supply lead (typically by means of a high value resistor connected between the chip VCC and the rectified line voltage and a local decoupling capacitor from VCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. Therefore, this circuit
should not be driven by a DC, low impedance power source of greater than VCLAMP.
Ambient Temperature
4314
MPIC2151
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
VDC

Supply Characteristics
VBIAS (VCC, VBS) = 12 V, VSS = COM and CL = 1000 pF unless otherwise specified.
VCCUV+
8.4
VCCUV
8.0
IQCC
400
VCLAMP
15.6
VDC
ILK
50
ADC
IQBS
10
Oscillator Frequency @ RT = 35.7 K, CT = 1 nF
fOSC
20
Oscillator Frequency @ RT = 7.04 K, CT = 1 nF
fOSC
100
ICT
0.001
1.0
A
mV
Quiescent VCC Supply Current

VCC Zener Shunt Clamp Voltage @ IOC = 5 mA
Floating Supply Characteristics
Quiescent VBS Supply Current
Oscillator I/O Characteristics
CT Input Current
CT Undervoltage Lockout @ 2.5 V < VCC < VCCUV+
kHz
VCTUV
RT High Level Output Voltage, VCC RT @ IRT = 100 A

@ IRT = 1 mA
VRT+
VRT+
20
200
RT Low Level Output Voltage, VCC + RT @ IRT = 100 A

@ IRT = 1 mA
VRT
VRT
20
200
VRTUV
2/3 VCC Threshold
VCT+
8.0
1/3 VCC Threshold
VCT
4.0
High Level Output Voltage, VBIASVO @ IO = 0 A
VOH
100
Low Level Output Voltage, VO @ IO = 0 A
VOL
100
TurnOn Rise Time
tr
120
TurnOff Fall Time
tf
60
DT
1.2
RT Duty Cycle, fOSC = 20 kHz
DC
50
RT Undervoltage Lockout, VCC RT
@ 2.5 V < VCC < VCCUV+
VDC
Output Characteristics
mV
Dynamic Electrical Characteristics

VBIAS (VCC, VBS) = 12 V and CL = 1000 pF unless otherwise specified. TA = 25C.
ns
4315
MPIC2151
TYPICAL CONNECTION
10 TO 600 V
VCC
VB
RT
HO
CT
VS
COM
LO
TO
LOAD
LEAD DEFINITIONS
Symbol
Lead Description
RT
Oscillator timing resistor input; a resistor is connected from RT to CT. RT is in phase with LO for normal IC operation.
CT
Oscillator timing capacitor input; a capacitor is connected from CT to COM in order to program the oscillator frequency
according to the following equation:
1
+ 1.4 (RT ) 75W) CT
where 75 is the effective impedance of the RT output stage.

VB
HO
VS
VCC
LO
COM
Logic and Low Side Return
VCCUV+
VCLAMP
VCC
RT(HO)
50%
RT
50%
RT(LO)
CT
tr
tf
90%
HO
LO
HO
LO
RT
10%
90%
10%
Figure 2. Switching Time Waveform Definitions
50%
50%
90%
HO
10%
DT
LO
90%
10%
4316
MOTOROLA
Data Sheet
TMOS E-FET.
High Energy Power FET
D2PAK for Surface Mount
Designer's
MTB1N100E
TMOS POWER FET

1.0 AMPERES
1000 VOLTS
RDS(on) = 9.0 OHM

The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This high voltage
MOSFET uses an advanced termination scheme to provide
enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is
designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a
draintosource diode with a fast recovery time. Designed for high
against unexpected voltage transients.

SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
Short Heatsink Tab Manufactured Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
CASE 418B02, Style 2

D2PAK
S

Rating
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 M)
GateSource Voltage Continuous
GateSource Voltage NonRepetitive (tp 10 ms)
Derate above 25C
Total Power Dissipation @ TA = 25C, when mounted with the minimum recommended pad size
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 10 mH, RG = 25 )
Thermal Resistance Junction to Ambient, when mounted with the minimum recommended pad size
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
1000
Vdc
1000
Vdc
20
40
Vdc
Vpk
ID
ID
IDM
PD
1.0
0.8
3.0
Adc
75
0.6
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
45
mJ
RJC
RJA
RJA
TL
1.67
62.5
50
C/W
260
Apk
REV 2
4317
MTB1N100E
Characteristic
Symbol
Min
Typ
Max
Unit
1000
1.251
Vdc
mV/C
10
100
100
nAdc
2.0
6.0
4.0
Vdc
mV/C
6.7
9.0
Ohm
4.86
9.0
10.5
gFS
0.9
1.32
mhos
Ciss
587
810
pF
Coss
59.6
120
Crss
12.2
25
td(on)
9.0
20
tr
12
25
td(off)
28
50
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 0.5 Adc)
RDS(on)
DrainSource OnVoltage (VGS = 10 Vdc)

(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 500 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
ns
tf
34
70
QT
14.6
20
Q1
2.8
Q2
6.8
Q3
5.2
0.764
0.62
1.0
trr
655
ta
42
tb
613
QRR
0.957

LD
4.5
nH

LS
7.5
nH
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
nC


(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125C)

Fig re 14)
(See Figure
((IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4318
MTB1N100E
2.0
2.0
TJ = 25C
1.4
5V
1.2
1.0
0.8
0.6
0.4
10
12
14
18
16
1.0
25C
0.8
0.6
0.4
TJ = 55C
3.6
4.0
4.4
4.8
25C
6
4
55C
2
0.2
0.4
0.6
1.4
0.8 1.0 1.2
1.6
1.8
2.0
5.2
5.6
8.0
TJ = 25C
7.8
7.6
7.4
7.2
7.0
VGS = 10 V
6.8
6.6
15 V
6.4
6.2
6.0

and Temperature
0.2
0.4
0.6 0.8 1.0

1.2
1.4
1.6
1.8
2.0

and Gate Voltage
10000
2.8
TJ = 125C
VGS = 10 V
ID = 0.5 A
1000
100C
2.0

(NORMALIZED)
3.2
10
1.6
1.2
0.8
100
10
1.0
25C
0.1
0.4
0
50
2.8
TJ = 100C
2.4
2.4
VGS = 10 V
1.2
12
1.4
0
2.0
20
16
14
100C
1.6
0.2
4V
0.2
0
6V
1.6
VDS 10 V
1.8
VGS = 10 V
1.8
VGS = 0 V
0.01
25
0
25
50
75
100
125
150

Temperature
100
200 300 400 500 600 700 800 900 1000


4319
MTB1N100E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1200
1000
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25C
VGS = 0 V
800
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1000
Ciss
600
Crss
400
Coss
200
Crss
0
10
5
VGS
TJ = 25C
100
Coss
10
Crss
1
5
10
15
20
VDS
Figure 7a. Capacitance Variation
4320
Ciss
25
10
100
1000

Variation
480
QT
400
10
8
320
VGS
Q1
Q2
240
ID = 1 A
TJ = 25C
160
80
Q3
VDS
0
0
4 5 6 7 8 9 10 11 12 13 14
0
15
1000
t, TIME (ns)
12
MTB1N100E
VDD = 500 V
ID = 1 A
VGS = 10 V
TJ = 25C
100
tf
td(off)
tr
td(on)
10
1
1
10

100

1.0
VGS = 0 V
TJ = 25C
0.8
0.6
0.4
0.2
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78
SAFE OPERATING AREA

discussed in AN569, Transient Thermal ResistanceGeneral Data and Its Use.
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle must not exceed
(TJ(MAX) TC)/(RJC).
A Power MOSFET designated EFET can be safely used
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a constant. The energy rating decreases nonlinearly with an increase of peak current in avalanche and peak junction
temperature.
4321
MTB1N100E
SAFE OPERATING AREA
50
VGS = 20 V
SINGLE PULSE
TC = 25C

10
1.0
10 s
100 s
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
10
1.0
100
0.1
ID = 1 A
40
30
20
10
0
25
1000

Safe Operating Area
150
50
75
100
125


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
t1
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
t2
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4322
PD, POWER DISSIPATION (WATTS)
3
2.5
RJA = 50C/W
Board material = 0.065 mil FR4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size 450 mils x 350 mils
2.0
1.5
1
0.5
0
25
50
75
100
125
150
Figure 15. D2PAK Power Derating Curve
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB2N40E
TMOS POWER FET

2.0 AMPERES
400 VOLTS
RDS(on) = 3.8 OHM

with higher power and lower RDS(on) capabilities. This advanced
TMOS EFET is designed to withstand high energy in the
avalanche and commutation modes. The new energy efficient
design also offers a draintosource diode with a fast recovery
power supplies, converters and PWM motor controls, these
Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
G
D2PAK
S

Symbol
Value
Unit
400
Vdc
VDSS
VDGR
400
Vdc

NonRepetitive (tp 10 ms)
VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
Single Pulse (tp 10 s)
ID
ID
IDM
2.0
1.5
6.0
Adc
Total Power Dissipation @ 25C

Derate above 25C
PD
40
0.32
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
45
mJ
RJC
RJA
RJA
3.13
62.5
50
C/W
TL
260
Rating

Thermal Resistance
Junction to Case
Junction to Ambient
Apk
REV 1
4323
MTB2N40E
Characteristic
Symbol
Min
Typ
Max
Unit
400
451
10
100
100
nAdc
2.0
3.2
7.0
4.0
Vdc
mV/C
3.1
3.5
Ohm
7.3
8.4
7.4
gFS
0.5
1.0
mhos
Ciss
229
320
pF
Coss
34
40
Crss
7.3
10
td(on)
8.0
16
tr
8.4
14
td(off)
12
26
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 200 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 320 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)
tf
11
20
QT
8.6
12
Q1
2.6
Q2
3.2
Q3
5.0
0.88
0.76
1.2
trr
156
ta
99
tb
57
QRR
0.89
4.5
7.5
ns
nC

(IS = 2.0 Adc, VGS = 0 Vdc )

(IS = 2.0 Adc, VGS = 0 Vdc , TJ = 125C)

(S Figure
Fi
(See
14)
((IS = 2.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4324
MTB2N40E
TJ = 25C
VGS = 10 V
8V
3.2
7V
2.4
6V
1.6
0.8
VDS 10 V
1
TJ = 100C
5V
12
16
20
TJ = 25C
55C
100C
5.0
TJ = 25C
4.5
4.0
VGS = 10 V
3.5
15 V
3.0
2.5
0.5

and Temperature
1.5
2
2.5
3
3.5

and Gate Voltage
2.5
1000
VGS = 10 V
ID = 1 A
VGS = 0 V
2

(NORMALIZED)
VGS = 10 V

8
25C
55C
1.5
TJ = 125C
100
0.5
0
50
25
0
25
50
75
100
125
150

Temperature
10
0
100
200
300
400

4325
MTB2N40E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
500
VGS = 0 V
Ciss
300
Ciss
Crss
200
4326
Ciss
Coss
10
Crss
Crss
5
TJ = 25C
VGS = 0
100
Coss
100
0
10
1000
TJ = 25C
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
400
VDS = 0 V
10
15
20
25
1
10
100
1000
VGS
VDS
Figure 7b. High Voltage Capacitance Variation
400
QT
10
300
VGS
8
6
200
Q2
Q1
4
TJ = 25C
ID = 2 A
2
0
VDS
Q3
0
100
100
t, TIME (ns)
12
MTB2N40E
td(off)
tf
10
tr
TJ = 25C
ID = 2 A
VDD = 200 V
VGS = 10 V
td(on)
10

100


2
VGS = 0 V
TJ = 25C
1.5
0.5
0.5
0.6
0.7
0.8
0.9
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
temperature.
4327
MTB2N40E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100 s
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
45

10
100
ID = 2 A
40
35
30
25
20
15
10
5
0
1000
25
50
75
100
125
r (t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

Safe Operating Area
150

1
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
t1
t2
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4328
RJA = 50C/W
2.5
2.0
1.5
1
0.5
0
25
50
75
100
125
150
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB2N60E
TMOS POWER FET

2.0 AMPERES
600 VOLTS
RDS(on) = 3.8 OHM

This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltageblocking capability without
degrading performance over time. In addition, this advanced TMOS
EFET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
G
D2PAK
S

Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
600
Vdc
600
Vdc
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
2.0
1.3
7.0
Adc

Derate above 25C
PD
50
0.4
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
190
mJ
RJC
RJA
RJA
2.5
62.5
50
C/W
TL
260
Rating

Thermal Resistance
Junction to Case
Junction to Ambient
Apk
4329
MTB2N60E
Characteristic
Symbol
Min
Typ
Max
Unit
600
480
0.25
1.0
100
nAdc
2.0
3.1
8.5
4.0
Vdc
mV/C
3.0
3.8
Ohm
8.2
8.4
gFS
1.0
mhos
Ciss
435
pF
Coss
100
Crss
20
td(on)
12
tr
21
td(off)
30
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 300 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 18 )
Fall Time
tf
24
QT
13
Q1
2.0
Q2
6.0
Q3
5.0

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)
VSD
1.0
0.9
1.6
(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/s)
trr
340
3.5
7.5
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 400 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage
Vdc
ns

LD

LS
nH
nH

4330
MTB2N60E
TJ = 25C
VGS = 10 V
VDS 10 V
7V
3
6V
2
5.5 V
1
4
TJ = 100C
55C
25C
5V
0
12
16
20
2
4
6
8
12
100C
VGS = 10 V
8
TJ = 25C
4
55C
1.5
4.5
4.5
TJ = 25C
4.3
4.1
3.9
3.7
VGS = 10 V
3.5
3.3
15 V
3.1
2.9
2.7
2.5
0

and Temperature
0.5
1.5
2
2.5
3
3.5

and Gate Voltage
1000
2.5
VGS = 10 V
ID = 1 A
VGS = 0 V
TJ = 125C
2

(NORMALIZED)
10
1.5
100
100C
10
0.5
0
50
25
0
25
50
75
100
125
150

Temperature
1
0
100
300
500
200
400
600

4331
MTB2N60E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
800
700
VDS = 0 V
VGS = 0 V
Ciss
Ciss
500
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
600
400
Ciss
Crss
300
200
4332
100
Coss
10
Crss
1
Coss
Crss
100
0
10
1000
TJ = 25C
10
15
20
25
0.1
TJ = 25C
VGS = 0
10
100
VGS
VDS

Variation
1000
12
TJ = 25C
ID = 2 A
VDS
400
QT
9
6
VDS = 100 V
VDS = 250 V
VDS = 400 V
Q1
300
200
Q2
3
00
100
VGS
Q3
4
12
16
20
1000
TJ = 25C
ID = 2 A
VDS = 300 V
VGS = 10 V
100
td(off)
t, TIME (ns)
500
15
MTB2N60E
tf
tr
td(on)
10
1
1
10
100

1000


2.0
VGS = 0 V
TJ = 25C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
temperature.
4333
MTB2N60E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100 s
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
200

10
Peak IL = 2 A
VDD = 50 V
150
100
50
0
25
10
100
50
75
100
125
1000
150

(NORMALIZED)

Safe Operating Area

1
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
0.01
t1
t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4334
RJA = 50C/W
2.5
2.0
1.5
1
0.5
0
25
50
75
100
125
150
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB2P50E
TMOS POWER FET

2.0 AMPERES
500 VOLTS
RDS(on) = 6.0 OHM
PChannel EnhancementMode Silicon Gate


SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode

D2PAK
S

Symbol
Value
Unit
500
Vdc
VDSS
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk
ID
ID
IDM
PD
2.0
1.6
6.0
Adc
75
0.6
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
80
mJ
RJC
RJA
RJA
TL
1.67
62.5
50
C/W
260
Rating
DrainSource Voltage

Derate above 25C
Apk
REV 1
4335
MTB2P50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
564
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
4.0
4.0
Vdc
mV/C
4.5
6.0
Ohm
9.5
14.4
12.6
gFS
1.5
2.9
mhos
Ciss
845
1183
pF
Coss
100
140
Crss
26
52
td(on)
12
24
tr
14
28
td(off)
21
42
tf
19
38
QT
19
27
Q1
3.7
Q2
7.9
Q3
9.9
2.3
1.85
3.5
trr
223
ta
161
tb
62
QRR
1.92

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 250 Vdc, ID = 2.0 Adc,

VGS = 10 dc,
dc
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4336
MTB2P50E
4
4
7V
8V
6V
2.5
2
1.5
5V
VDS 10 V
3.5
3.5
VGS = 10 V
TJ = 25C
0.5
25C
3
TJ = 55C
2.5
100C
2
1.5
1
0.5
4V
0
12
16
20
24
4.5
5.5
TJ = 100C
6
25C
4
55C
2
0.5
3
1.5
2.5
2
3.5
6.5
6
TJ = 25C
5.75
5.5
5.25
VGS = 10 V
15 V
4.75
4.5
4.25
4

and Temperature
0.5
2
3
1.5
2.5
3.5

and Gate Voltage
1000
VGS = 0 V
VGS = 10 V
ID = 1 A
TJ = 125C

(NORMALIZED)
3.5
1.5
0.5
50
2.5
VGS = 10 V
10
28
25
0
25
50
75
100
125
150

Temperature
100
100C
10
25C
50
100 150 200 250 300 350 400 450

500

4337
MTB2P50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1800
1600
1000
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1400
1200
1000
Ciss
800
600
Crss
400
200
0
10
Ciss
VGS = 0 V
TJ = 25C
Ciss
100
Coss
Crss
10
Coss
Crss
1
5
0
VGS
10
15
20
25
VDS
10
100
1000
4338

Variation
300
QT
10
250
VGS
8
Q1
200
Q2
150
ID = 2 A
TJ = 25C
100
50
VDS
Q3
0
10
12
14
16
18
0
20
1000
VDD = 250 V
ID = 2 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTB2P50E
100
tf
td(off)
tr
td(on)
10
10
QG, TOTAL CHARGE (nC)


100
2
VGS = 0 V
TJ = 25C
1.6
1.2
0.8
0.4
0
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
SAFE OPERATING AREA

discussed in AN569, Transient Thermal ResistanceGeneral
Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4339
MTB2P50E
SAFE OPERATING AREA
80
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100 s
1 ms
10 ms
ID = 2 A

10
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
60
40
20
0.01
0.1
10
100
0
25
1000
50
75
100
125
150

Safe Operating Area


1
D = 0.5
0.2
0.1
P(pk)
0.05
0.1
0.02
0.01
SINGLE PULSE
t1
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E01
1.0E+01
1.0E+00
t, TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
3
2.5
RJA = 50C/W
2.0
1.5
1
0.5
0
25
50
75
100
125
150
4340
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB3N100E
TMOS POWER FET

3.0 AMPERES
1000 VOLTS
RDS(on) = 4.0 OHM



D2PAK
S

Rating
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
1000
Vdc
1000
Vdc
20
40
Vdc
Vpk

ID
ID
IDM
3.0
2.4
9.0
Adc

Derate above 25C
PD
125
1.0
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
245
mJ
RJC
RJA
RJA
1.0
62.5
50
C/W
TL
260
DrainSource Voltage

Apk
REV 2
4341
MTB3N100E
Characteristic
Symbol
Min
Typ
Max
Unit
1000
1.23
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
6.0
4.0
Vdc
mV/C
2.96
4.0
Ohm
4.97
14.4
12.6
gFS
2.0
3.56
mhos
Ciss
1316
1800
pF
Coss
117
260
Crss
26
75
td(on)
13
25
tr
19
40
td(off)
42
90
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 400 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
ns
tf
33
55
QT
32.5
45
Q1
6.0
Q2
14.6
Q3
13.5
0.794
0.63
1.1
trr
615
ta
104
tb
511
QRR
2.92

LD
4.5
nH

LS
7.5
nH
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
nC


(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125C)

Fig re 14)
(See Figure
((IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4342
MTB3N100E
6
6
VGS = 10 V
TJ = 25C
6V
5V
3
2
VDS 10 V
100C
5
4
25C
3
2
TJ = 55C
1
4V
0
6
8
10
12
14
16 18
0
2.0
20
2.4
2.8
3.2 3.6
4.0 4.4 4.8
5.2
TJ = 100C
4
25C
3
2
55C
1
1.0
1.5
2.5
2.0
3.0
3.5
4.0
4.5
5.0
6.0
5.5
6
VGS = 10 V
6.0
5.5
6.0
3.8
TJ = 25C
3.6
VGS = 10 V
3.4
3.2
15 V
3.0
2.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0

and Temperature

and Gate Voltage
100000
2.4
2.0
VGS = 10 V
ID = 1.5 A
VGS = 0 V
1.6
1.2
100C
1000
100
25C
10
0.8
0.4
50
TJ = 125C
10000

(NORMALIZED)
5.6
1
25
25
50
75
100
125
150
100
200
300
400
500
600
700
800

Temperature

900 1000
4343
MTB3N100E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2800
10000
Ciss
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1000
2000
Ciss
1600
Crss
1200
800
100
Coss
Crss
10
Coss
400
Crss
10
5
VGS
10
15
20
VDS
4344
TJ = 25C
VGS = 0 V
2400
25
10
100
1000

Variation
400
14
350
QT
12
300
250
10
8
200
VGS
Q1
Q2
150
ID = 3 A
TJ = 25C
4
2
50
Q3
VDS
0
0
100
12
16
20
24
28
0
30
1000
VDD = 500 V
ID = 3 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
16
MTB3N100E
100
td(off)
tf
tr
td(on)
10
1
10

100


3.0
VGS = 0 V
TJ = 25C
2.5
2.0
1.5
1.0
0.5
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78 0.80
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4345
MTB3N100E
SAFE OPERATING AREA
250
VGS = 20 V
SINGLE PULSE
TC = 25C
10
10 s
100 s
1.0
1 ms
10 ms
0.1
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
ID = 3 A

100
dc
1.0
10
100
200
150
100
50
0
25
1000

Safe Operating Area
150
50
75
100
125


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
t2
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4346
3.0
2.5
RJA = 50C/W
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB3N120E
TMOS POWER FET

3.0 AMPERES
1200 VOLTS
RDS(on) = 5.0 OHM

designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a

D2PAK
Avalanche Energy Capability Specified at Elevated Temperature

S
Low Stored Gate Charge for Efficient Switching
Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the
Avalanche Mode
SourcetoDrain Diode Recovery time Comparable to Discrete Fast Recovery Diode
* See App. Note AN1327 Very Wide Input Voltage Range; Offline Flyback Switching Power Supply
Symbol
Value
Unit
DrainSource Voltage
VDSS
1200
Vdc
VDGR
1200
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
3.0
2.2
11
Adc

Derate above 25C
PD
125
1.0
2.5
Watts
W/C
Watts
TJ, Tstg
55 to 150
Rating
Apk

(VDD = 100 Vdc, VGS = 10 Vdc, PEAK IL = 4.5 Apk, L = 10 mH, RG = 25 )
EAS

RJC
RJA
RJA
1.0
62.5
50
C/W
TL
260
mJ
101
REV 1
4347
MTB3N120E
Characteristic
Symbol
Min
Typ
Max
Unit
1200
1.28
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.1
4.0
Vdc
mV/C
4.0
5.0
Ohm
18.0
15.8
gFS
2.5
3.1
mhos
Ciss
2130
2980
pF
Coss
1710
2390
Crss
932
1860
td(on)
13.6
30
tr
12.6
30
td(off)
35.8
70
tf
20.7
40
QT
31
40
Q1
8.0
Q2
11
Q3
14
0.80
0.65
1.0
trr
394
ta
118
tb
276
QRR
2.11

LD
4.5
nH

LS
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 600 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 600 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4348
MTB3N120E
6
6
TJ = 25C
VDS 10 V
VGS = 10 V
6V
3
5V
5
100C
4
3
2
25C
1
TJ = 55C
4V
0
12
24
18
30
3.4
3.8
4.2
4.6
5.0
5.4
5.8
VGS = 10 V
TJ = 100C
4
25C
2
55C
6.2
5.4
TJ = 25C
5.0
VGS = 10 V
4.6
15 V
4.2
3.8

and Temperature

and Gate Voltage
2.5
2.0
10,000
VGS = 0 V
VGS = 10 V
ID = 1.5 A
TJ = 125C
1,000

(NORMALIZED)
1.5
1.0
0.5
0
50
25
25
50
75
100
125
150
100C
100
25C
10
200
400
600
800
1000

Temperature

1200
4349
MTB3N120E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
10,000
2800
Ciss VDS = 0 V
VGS = 0 V
TJ = 25C
TJ = 25C
Ciss
2000
1600
Crss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
2400
VGS = 0 V
Ciss
1200
800
Coss
1,000
Coss
100
400
Crss
Crss
0
10
0
VGS
10
15
20
VDS
4350
25
10
10
100
1000

Variation
MTB3N120E
350
12
300
QT
10
250
8
Q2
Q1
150
ID = 3 A
TJ = 25C
4
2
0
200
VGS
50
VDS
Q3
8
12
16
100
20
24
28
0
32
1000
t, TIME (ns)
14
400
16
VDD = 600 V
ID = 3 A
VGS = 10 V
TJ = 25C
100
td(off)
tf
td(on)
tr
10
10
10



3.0
VGS = 0 V
TJ = 25C
2.4
1.8
1.2
0.6
0
0.55
0.59
0.63
0.67
0.71
0.75
0.79
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4351
MTB3N120E
SAFE OPERATING AREA
10
120
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10 s
100 s
1.0
1 ms
10 ms
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
dc
1,000
100
ID = 3 A
100
80
60
40
20
0
10,000
25
50
75
100
125
150

Safe Operating Area

r (t), NORMALIZED EFFECTIVE

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
1.0E05
t1
0.01
t2
SINGLE PULSE
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4352
MTB3N120E
L1
H1
90VAC
600VAC
C1
0.1
1 kV
D1 D4
1N4007s
C4
0.1
1 kV
L1
+Vin
H2
C3
0.0047
3 kV
C2
0.0047
3 kV
EARTH
GND
C6
100 mF
450 V
C5
100 mF
450 V
R4
470 k
1/2 W
R3
470 k
1/2 W
R2
470 k
1/2 W
R1
470 k
1/2 W
INPUT GND
Figure 15. The AC Input/Filter Circuit Section
T1
C11
D8
100 mF
MBR370 10 V
+Vin
R9
R8
100 mF
20 V
D9
MUR430
Vaux
82 k, 1/2 W
R7
R6
R5
R16
100 k
1/2 W
10 mF
25 V
+
D10
+
C13
C9
LL
MUR1100
4
C7
220 pF
1
U2
1/2
MOC8102
R12 10 W
R15
680 W
U2
MOC8102
D6
D7
R13
1k
R20
120 W
C15
1.5 nF
R19
32.4 k
1.3 mF 7.5 k
C17
2.2 nF
Q1
C8
1000 pF
+5 V
C14
MTP3N120E
UC3845BN
D5
3.3 V
C12
Vaux
7
R10
27 k
MUR130
C10
R11
1.8 k
1 nF
3 kV
+12 V
U3
TL431
C16 R17
R21
2.49 k
GND
R14
1.2 W
1/2 W
INPUT GND
Figure 16. The DC/DC Converter Circuit Section
4353
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB4N80E
TMOS POWER FET

4.0 AMPERES
800 VOLTS
RDS(on) = 3.0 OHM



D2PAK
S

Rating
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
800
Vdc
800
Vdc
20
40
Vdc
Vpk

ID
ID
IDM
4.0
2.9
12
Adc

Derate above 25C
PD
125
1.0
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
320
mJ
RJC
RJA
RJA
1.0
62.5
50
C/W
TL
260
DrainSource Voltage

Apk
REV 2
4354
MTB4N80E
Characteristic
Symbol
Min
Typ
Max
Unit
800
1.02
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
1.95
3.0
Ohm
8.24
12
10
gFS
2.0
4.3
mhos
Ciss
1320
2030
pF
Coss
187
400
Crss
72
160
td(on)
13
30
tr
36
90
td(off)
40
80
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 4.0 Adc)
(ID = 2.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 400 Vdc, ID = 4.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
ns
tf
30
75
QT
36
80
Q1
7.0
Q2
16.5
Q3
12
0.812
0.7
1.5
trr
557
ta
100
tb
457
QRR
2.33

LD
4.5
nH

LS
7.5
nH
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 4.0 Adc,
VGS = 10 Vdc)
nC


(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125C)

Fig re 14)
(See Figure
((IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4355
MTB4N80E
8
8
TJ = 25C
6V
5
5V
4
3
2
1
0
6
5
100C
4
25C
3
2
TJ = 55C
4V
0
VDS 10 V
VGS = 10 V
6
8
10
12
14
16
18
0
2.0
20
4.6
VGS = 10 V
3.8
TJ = 100C
3.0
25C
2.2
1.4
55C
0.6
1
3
4
5
6
TJ = 25C
2.5
2.4
2.3
2.2
VGS = 10 V
2.1
2.0
15 V
1.9
1.8
1
3
4
5
6

and Gate Voltage
10000
2.2
VGS = 10 V
ID = 2 A
VGS = 0 V
TJ = 125C
1000

(NORMALIZED)
5.6
2.6

and Temperature
1.8
2.8
3.2
3.6
4.0
4.4
4.8
5.2

2.4
1.4
1.0
100C
100
25C
10
0.6
0.2
50
1
25
0
25
50
75
100
125

Temperature
4356
150
100
700
200
300
400
500
600
800

MTB4N80E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2800
10000
VDS = 0 V
Ciss
2400
VGS = 0 V
TJ = 25C
VGS = 0 V
TJ = 25C
Ciss
1600
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1000
2000
Ciss
Crss
1200
800
100
Coss
Crss
10
Coss
400
Crss
0
10
0
VGS
1
10
15
20
VDS
25
10
100
1000

Variation
4357
500
QT
400
VGS
Q1
Q2
300
200
ID = 4 A
TJ = 25C
100
VDS
Q3
0
0
12
18
24
30
0
36
1000
VDD = 400 V
ID = 4 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
10
MTB4N80E
100
tf
td(off)
tr
td(on)
10
1
10

100


4.0
3.6
VGS = 0 V
TJ = 25C
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78
0.82
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4358
temperature.
MTB4N80E
SAFE OPERATING AREA
350
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
10 s
100 s
1.0
1 ms
10 ms
dc
0.1
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1.0
10
100
ID = 4 A
300
250
200
150
100
50
0
25
1000

Safe Operating Area
150
50
75
100
125


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
t2
0.01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
RJA = 50C/W
2.5
2.0
1.5
1
0.5
0
25
50
75
100
125
150
4359
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB6N60E
TMOS POWER FET

6.0 AMPERES
600 VOLTS
RDS(on) = 1.2 OHM


G
D2PAK
S

Symbol
Value
Unit
VDSS
600
Vdc
VDGR
VGS
VGSM
600
Vdc
20
40
Vdc
Vpk

ID
ID
IDM
6.0
4.6
18
Adc

Derate above 25C
PD
125
1.0
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
Rating


Apk
C
mJ
405
RJC
RJA
RJA
1.0
62.5
50
C/W
TL
260
REV 1
4360
MTB6N60E
Characteristic
Symbol
Min
Typ
Max
Unit
600
689
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.1
4.0
Vdc
mV/C
0.94
1.2
Ohms
6.0
8.6
7.6
gFS
2.0
5.5
mhos
Ciss
1498
2100
pF
Coss
158
217
Crss
29
56
td(on)
14
30
tr
19
40
td(off)
40
80
tf
26
50
QT
35.5
50
Q1
8.1
Q2
14.1
Q3
15.8
0.83
0.72
1.5
trr
266
ta
166
tb
100
QRR
2.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDS = 300 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 300 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4361
MTB6N60E
12
12
VGS = 10 V
VDS 10 V
6V
10
TJ = 25C
7V
8V
8
6
5V
4
10
8
6
4
100C
2
4V
0
TJ = 55C
0
18
4
8
12
16
6
10
14
2.0
2.5
VGS = 10 V
2.0
TJ = 100C
1.5
25C
1.0
55C
0.5
6
4
8
10
12
6.0
TJ = 25C
1.3
1.2
1.1
VGS = 10 V
1.0
15 V
0.9
0.8
0
4
6
8
10
12

and Gate Voltage
10000
VGS = 10 V
ID = 3 A
VGS = 0 V
TJ = 125C
1000

(NORMALIZED)
2.5
1.5
0.5
25
0
25
50
75
100
125

Temperature
4362
3.0
4.0
5.0
3.5
4.5
5.5
1.4

and Temperature
0
50
2.5

25C
150
100C
100
25C
10
1
0
100
200
300
400
500
600

MTB6N60E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
3200
VDS = 0 V
VGS = 0 V
TJ = 25C
10000
TJ = 25C
VGS = 0 V
Ciss
1600
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
2400
Ciss
Crss
800
Ciss
1000
Coss
100
Crss
10
Coss
0
10
Crss
5
0
VGS
10
15
20
25
10
100
1000
VDS
4363
300
QT
10
8
VGS
Q1
Q2
ID = 6 A
TJ = 25C
2
Q3
0
200
VDS
12
24
18
30
100
0
36
100
t, TIME (ns)
12
MTB6N60E
VDD = 300 V
ID = 6 A
VGS = 10 V
TJ = 25C
td(off)
tf
tr
td(on)
10
10
100


6
5
VGS = 0 V
TJ = 25C
4
3
2
1
0
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4364
temperature.
MTB6N60E
100
EAS, SINGLE PULSE DRAINNTOSOURCE

SAFE OPERATING AREA

VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
10
100 s
1 ms
1.0
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
10
dc
100
450
ID = 6 A
400
350
300
250
200
150
100
50
0
1000
25
50
75
100
150
125

Safe Operating Area


1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
RJA = 50C/W
2.5
2.0
1.5
1
0.5
0
25
50
75
100
125
150
4365
MOTOROLA
Advance Information
MTB8N50E
TMOS E-FET.
TMOS POWER FET

8.0 AMPERES
500 VOLTS
RDS(on) = 0.8 OHM


Fast Recovery Diode

D2PAK
S

Rating
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
500
Vdc
500
Vdc
20
40
Vdc
Vpk

ID
ID
IDM
8.0
5.0
32
Adc

Derate above 25C
PD
125
1.0
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
510
mJ
RJC
RJA
RJA
1.0
40
50
C/W
TL
260
DrainSource Voltage

(VDD = 50 Vdc, VGS = 10 Vdc, IL = 8.0 Apk, L = 15.9 mH, RG = 25 )
Apk
4366
MTB8N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
500
Vdc
mV/C
250
1000
100
nAdc
2.0
5.0
4.0
Vdc
mV/C
0.6
0.8
Ohms
7.2
6.4
gFS
4.0
mhos
Ciss
1200
1800
pF
Coss
176
264
Crss
72
108
td(on)
25
50
tr
36
72
td(off)
75
150
tf
30
60
QT
92
125
Q1
12
Q2
45
Q3
35
1.1
1.0
2.0
trr
420
ta
280
tb
140
QRR
4.4

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 8.0 Adc)
(ID = 4.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 250 Vdc, ID = 8.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 400 Vdc, ID = 8.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 8.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4367
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB9N25E
TMOS POWER FET

9.0 AMPERES
250 VOLTS
RDS(on) = 0.45 OHM


G
S

D2PAK

Symbol
Value
Unit
250
Vdc
VDSS
VDGR
250
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
9.0
5.7
32
Adc

Derate above 25C
PD
80
0.64
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
Rating

Thermal Resistance
Junction to Case
Junction to Ambient
Apk
mJ
122
RJC
RJA
RJA
1.56
62.5
50
C/W
TL
260
4368
MTB9N25E
Characteristic
Symbol
Min
Typ
Max
Unit
250
328
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
0.37
0.45
Ohm
3.5
5.4
4.7
gFS
3.0
5.2
mhos
Ciss
783
1100
pF
Coss
144
200
Crss
32
65
td(on)
10
20
tr
36
70
td(off)
27
55
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 9.0 Adc)
(VGS = 10 Vdc, ID = 4.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 125 Vdc, ID = 9.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 200 Vdc, ID = 9.0 Adc,

VGS = 10 Vdc)
tf
26
50
QT
26
40
Q1
4.8
Q2
12.7
Q3
9.2
0.9
0.81
1.5
trr
191
ta
126
tb
65
QRR
1.387
4.5
7.5
ns
nC

(IS = 9.0 Adc, VGS = 0 Vdc )

(IS = 9.0 Adc, VGS = 0 Vdc , TJ = 125C)

(S Figure
Fi
(See
14)
((IS = 9.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4369
MTB9N25E
TJ = 25C
18
VGS = 10 V
9V
15
VDS 10 V
8V
7V
18
12
9
6V
6
3
25C
12
100C
9
6
3
5V
0
0
2
4
6
8
10
12
1.2
VGS = 10 V
1.0
0.8
TJ = 100C
0.6
25C
0.4
0.2
55C
0
0
6
9
12
3
4
5
6
7
15
18

0.6
TJ = 25C
0.5
VGS = 10 V
0.4
15 V
0.3
0

and Temperature
6
9
12
15
18

and Gate Voltage
1000
2.5
VGS = 0 V
VGS = 10 V
ID = 4.5 A
2.0
TJ = 125C
100

(NORMALIZED)
TJ = 55C
15
1.5
1.0
100C
10
25C
1
0.5
0
50
0.1
25
0
25
50
75
100
125

Temperature
4370
150
50
100
150
200
250

MTB9N25E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2000
VDS = 0 V
1600
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25C
Ciss
1200
Ciss
Crss
800
Coss
400
0
Crss
10
0
VGS
10
15
20
25
VDS
4371
240
12
180
QT
VGS
8
Q1
120
Q2
ID = 9 A
TJ = 25C
60
Q3
0
VDS
0
24
12
18
0
30
1000
t, TIME (ns)
16
MTB9N25E
VDD = 250 V
ID = 9 A
VGS = 10 V
TJ = 25C
100
tr
td(off)
10
tf
td(on)
10
100


9.0
7.5
VGS = 0 V
TJ = 25C
6.0
4.5
3.0
1.5
0
0.5
0.55
0.65
0.75
0.85
0.6
0.7
0.8
0.9
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4372
temperature.
MTB9N25E
SAFE OPERATING AREA
125
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
10
100 s
1
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1.0
100
10

100
ID = 9 A
100
75
50
25
0
1000
25

Safe Operating Area
50
75
100
125
150


1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
SINGLE PULSE
0.01
0.00001
t2
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0
10
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
RJA = 50C/W
2.5
2.0
1.5
1
0.5
0
25
50
75
100
125
150
4373
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB10N40E
TMOS POWER FET

10 AMPERES
400 VOLTS
RDS(on) = 0.55 OHM

G
D2PAK

Fast Recovery Diode

Symbol
Value
Unit
VDSS
VDGR
VGS
400
Vdc
400
Vdc
20
Vdc

ID
ID
IDM
10
6.0
40
Amps

Derate above 25C
PD
125
1.00
2.5
Watts
W/C
Watts
TJ, Tstg
55 to 150

(VDD = 25 Vdc, VGS = 10 Vpk, IL = 10 Apk, L = 10 mH, RG = 25 )
EAS
520
mJ

RJC
RJA
RJA
1.00
62.5
50
C/W
TL
260
Rating
Apk
4374
MTB10N40E
Characteristic
Symbol
Min
Typ
Max
Unit
400
398
Vdc
mV/C
0.1
1.0
OFF CHARACTERISTICS
V(BR)DSS

Adc
IDSS
GateBody Leakage CurrentForward

(Vgsf = 20 Vdc, VDS = 0)
IGSSF
100
nAdc
GateBody Leakage CurrentReverse

(Vgsr = 20 Vdc, VDS = 0)
IGSSR
100
nAdc
2.0
2.8
6.3
4.0
Vdc
mV/C
0.4
0.55
Ohm
5.61
6.6
5.5
gFS
4.0
mhos
Ciss
1570
2200
pF
Coss
230
325
Crss
55
110
td(on)
25
50
tr
37
75
td(off)
75
150
tf
31
65
QT
46
63
Q1
10
Q2
23
Q3
0.9
2.0
trr
250
ns
QRR
3000
nC
3.5
4.5
7.5
VGS(th)
RDS(on)

(ID = 10 Adc)
(ID = 5.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 200 Vdc, ID = 10 Adc,

VGS = 10 Vdc
Vdc,
RG = 10 )
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 320 Vdc, ID = 10 Adc,
VGS = 10 Vdc)
ns
nC


(See Figure 14)

(IS = 10 Adc, VGS = 0 Vdc, TJ = 125C)
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc

(Measured from the tab to center of die)
LD

LS
nH
nH

4375
MTB10N40E
20
25
TJ = 25C
7V
16
VDS 10 V
10 V
12
VGS = 6 V
20
15
10
TJ = 25C
5
55C
100C
5V
0
12
16
VGS = 10 V
100C
1
TJ = 25C
0.5
55C
10
15
20
25
30
1.5
20
0.55
TJ = 25C
0.5
0.45
0.4
VGS = 10 V
15 V
0.35
0.3
0.25
10
15
20

and Temperature

and Gate Voltage
100
VGS = 0 V
VGS = 10 V
ID = 5 A
40
TJ = 125C
20

(NORMALIZED)
10
100C
4
2
1
25C
0.4
0.2
0
50
4376
25
25
50
75
100
125
150
0.1
100
150
200
250
300
350

Temperature

400
MTB10N40E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
3500
TJ = 25C
VGS = 0 V
C, CAPACITANCE (pF)
3000
2500
2000
Crss
Ciss
1500
1000
500
VDS = 0 V
0
10
Coss
0
VGS
10
15
20
25
VDS
4377
16
10000
TJ = 25C
ID = 10 A
VDS = 100 V
2000
250 V
12
VDD = 200 V
ID 10 A
VGS = 10 V
TJ = 25C
4000
t, TIME (ns)
MTB10N40E
320 V
8
1000
td(off)
tf
tr
td(on)
400
200
100
40
20
20
40
10
80
Qg, TOTAL CHARGE (nC)
10
100


60
1000

10
VGS = 0 V
TJ = 25C
8
7
6
5
4
3
2
1
0
0.2
0.4
0.6
0.8
1.2
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4378
temperature.
MTB10N40E
SAFE OPERATING AREA
100
40
20
10 s
100 s
10
4
1 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.4
0.2
0.1

600
VGS = 20 V
SINGLE PULSE
TC = 25C
dc
10
100
ID = 10 A
450
300
150
0
25
1000
50
75
100
125
150

Safe Operating Area

r(t) , NORMALIZED EFFECTIVE

1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
0.05
t1
t2
0.02
0.03
0.02
0.01
0.01
0.01
RJC(t) = r(t) RJC

RJC = 1C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
10
20
50
100
200
500
1000
t,TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
3
RJA = 50C/W
2.5
2.0
1.5
1
0.5
0
25
50
75
100
125
150
4379
MOTOROLA
Data Sheet
V
MTB15N06V
Designer's
TMOS
Power Field Effect Transistor
TMOS POWER FET

15 AMPERES
60 VOLTS
RDS(on) = 0.12 OHM

TMOS V is a new technology designed to achieve an onresistance
area product about onehalf that of standard MOSFETs. This new
technology more than doubles the present cell density of our 50
and 60 volt TMOS devices. Just as with our TMOS EFET designs,
TMOS V is designed to withstand high energy in the avalanche and
commutation modes. Designed for low voltage, high speed
switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.

TM
G
S

D2PAK
Features Common to TMOS V and TMOS EFETs

Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel,
Add T4 Suffix to Part Number
Rating
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
20
25
Vdc
Vpk

ID
ID
IDM
15
8.7
45
Adc

Derate above 25C
PD
55
0.37
3.0
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
113
mJ
RJC
RJA
RJA
2.73
62.5
50
C/W
TL
260
DrainSource Voltage

(VDD = 25 Vdc, VGS = 10 Vdc, IL = 15 Apk, L = 1.0 mH, RG = 25 )
Apk
REV 2
4380
MTB15N06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
67
Vdc
mV/C
10
100
100
nAdc
2.0
2.7
5.0
4.0
Vdc
mV/C
0.08
0.12
Ohm
2.0
2.2
1.9
gFS
4.0
6.2
mhos
Ciss
469
660
pF
Coss
148
200
Crss
35
60
td(on)
7.6
20
tr
51
100
td(off)
18
40
tf
33
70
QT
14.4
20
Q1
2.8
Q2
6.4
Q3
6.1
1.05
0.9
1.6
trr
59.3
ta
46
tb
13.3
QRR
0.165

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 15 Adc)
(ID = 7.5 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 30 Vdc, ID = 15 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 15 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 15 Adc, VGS = 0 Vdc, TJ = 150C)

(See Figure
Fig re 14)
((IS = 15 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4381
MTB15N06V
30
VGS = 10 V
9V
TJ = 25C
25
7V
20
15
6V
10
5V
25
100C
20
25C
15
TJ = 55C
10
5
0
1
0.2
10
VGS = 10 V
0.14
TJ = 100C
25C
0.08
(o )
55C
0.02
0
R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
10
15
20
25
30
0.13
TJ = 25C
0.11
VGS = 10 V
0.09
15 V
0.07
0.05
10
15
20
25

and Temperature

and Gate Voltage
30
100
VGS = 0 V
VGS = 10 V
ID = 7.5 A
1.6

(NORMALIZED)
VDS 10 V
8V
30
1.2
0.8
0.4
50
25
25
50
75
100
125

Temperature
4382
150
175
TJ = 125C
10
10
20
30
40
50
60

MTB15N06V
The lengths of various switching intervals (t) are determined
by how fast the FET input capacitance can be charged by
current from the generator.

At high switching speeds, parasitic circuit elements

complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate
drive current. The voltage is determined by Ldi/dt, but since
di/dt is a function of drain current, the mathematical solution
is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite
internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance is
difficult to measure and, consequently, is not specified.
snubbed inductive load. Power MOSFETs may be safely
operated into an inductive load; however, snubbing reduces
switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1500
C, CAPACITANCE (pF)
1200
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
900
Crss
600
Ciss
300
Coss
Crss
0
10
0
VGS
10
15
20
25
VDS
4383
60
QT
10
50
VGS
40
Q1
Q2
30
6
ID = 15 A
TJ = 25C
20
10
2
VDS
Q3
0
0
6
9
12
0
15
1000
t, TIME (ns)
12
MTB15N06V
VDD = 30 V
ID = 15 A
VGS = 10 V
TJ = 25C
100
tr
tf
td(off)
10
td(on)
1
1
10

100

15
VGS = 0 V
TJ = 25C
12
0
0.5
0.7
0.9
1.1
1.3
1.5
SAFE OPERATING AREA

drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
Data and Its Use.
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the transition
time (tr,tf) do not exceed 10 s. In addition the total power
(TJ(MAX) TC)/(RJC).
in switching circuits with unclamped inductive loads. For
4384
reliable operation, the stored energy from circuit inductance

dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (I DM ), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
MTB15N06V
SAFE OPERATING AREA
120
VGS = 10 V
SINGLE PULSE
TC = 25C

100
10 s
10
100 s
1 ms
10 ms
1.0
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
ID = 15 A
100
80
60
40
20
0
10
1.0
100
25
175
50
75
100
125
150

Safe Operating Area


1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E05
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
t1
t2
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
3
2.5
2.0
1.5
1
0.5
0
IS
RJA = 50C/W
25
50
75
100
125
150
175
4385
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB16N25E
TMOS POWER FET

16 AMPERES
250 VOLTS
RDS(on) = 0.25 OHM



D2PAK
S

Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
250
Vdc
250
Vdc
20
40
Vdc
Vpk

ID
ID
IDM
16
10
56
Adc

Derate above 25C
PD
125
1.0
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
384
mJ
RJC
RJA
RJA
1.0
62.5
50
C/W
TL
260
Rating
DrainSource Voltage

Apk
4386
MTB16N25E
Characteristic
Symbol
Min
Typ
Max
Unit
250
333
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
0.17
0.25
Ohm
3.6
4.8
4.2
gFS
3.0
7.0
mhos
Ciss
1558
2180
pF
Coss
281
390
Crss
130
260
td(on)
15
30
tr
64
130
td(off)
56
110
tf
44
90
QT
53.4
70
Q1
9.3
Q2
27.5
Q3
17.1
0.915
1.39
1.5
trr
234
ta
170
tb
64
QRR
2.165

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 16 Adc)
(ID = 8.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 125 Vdc, ID = 16 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 200 Vdc, ID = 16 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 16 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

4387
MTB16N25E
32
VGS = 10 V
TJ = 25C
VDS 10 V
8V
32
7V
24
6V
16
24
25C
16
100C
5V
TJ = 55C
0
0
1
0.5
TJ = 100C
0.4
0.3
0.2
25C
0.1
55C
0
5
10
15
20
25
35
30

0.26
TJ = 25C
0.22
VGS = 10 V
0.18
15 V
0.14
0.1
0

and Temperature
16
24
32
40

and Gate Voltage
1000
3.0
VGS = 0 V
VGS = 10 V
ID = 8 A
TJ = 125C

(NORMALIZED)
VGS = 10 V
2.5
0.6
2.0
1.5
1.0
100
100C
10
25C
0.5
0
50
1
25
0
25
50
75
100
125

Temperature
4388
150
50
150
250
100
200
300

MTB16N25E


switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
5000
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
4000
Ciss
3000
2000
Ciss
Crss
1000
0
10
5
VGS
Crss
5
0
VDS
Coss
10
15
20
25
4389
200
QT
VGS
150
Q1
Q2
100
6
ID = 16 A
TJ = 25C
3
Q3
0
10
VDS
50
40
20
30
50
0
60
1000
t, TIME (ns)
12
MTB16N25E
VDD = 250 V
ID = 16 A
VGS = 10 V
TJ = 25C
100
tr
td(off)
td(on)
10
tf
10
100


16
VGS = 0 V
TJ = 25C
12
0
0.5
0.55
0.65 0.7
0.75 0.8
0.85 0.9
0.6
0.95
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4390

temperature.
MTB16N25E
SAFE OPERATING AREA
400
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
10
100 s
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
10
1.0
100

100
ID = 16 A
300
200
100
1000
25

Safe Operating Area
50
75
100
125
150


1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
0.02
t1
0.01
t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1.0
10
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
3
2.5
2.0
1.5
1
0.5
0
IS
RJA = 50C/W
Collector/Drain Pad Size 9 450 mils x 350 mils
25
50
75
100
125
150
4391
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB20N20E
TMOS POWER FET

20 AMPERES
200 VOLTS
RDS(on) = 0.16 OHM


G
D2PAK
S

Rating
Symbol
Value
Unit
200
Vdc
VDSS
VDGR
200
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
20
12
60
Adc

Derate above 25C
PD
125
1.0
2.5
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
600
mJ
RJC
RJA
RJA
1.0
62.5
50
C/W
TL
260
DrainSource Voltage

Apk
REV 2
4392
MTB20N20E
Min
Typ
Max
Unit
200
263
Vdc
mV/C
10
100
100
nAdc
2.0
7.0
4.0
Vdc
mV/C
0.12
0.16
Ohm
3.84
3.36
gFS
8.0
11
mhos
Ciss
1880
2700
pF
Coss
378
535
Crss
68
100
td(on)
17
40
tr
86
180
td(off)
50
100
tf
60
120
QT
54
75
Q1
12
Q2
24
Q3
22
1.0
0.82
1.35
trr
239
ta
136
tb
103
QRR
2.09

LD
4.5
nH

LS
7.5
nH
Characteristic
Symbol
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 10 Adc)
RDS(on)

(ID = 20 Adc)
(ID = 10 Adc, TJ = 125C)
VDS(on)
Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 100 Vdc, ID = 20 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Figure 8)
(VDS = 160 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 20 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

4393
MTB20N20E
40
40
TJ = 25C
8V
9V
7V
30
20
6V
10
5V
25
100C
20
15
10
0.35
VGS = 10 V
0.30
TJ = 100C
0.25
0.20
0.15
25C
0.10
55C
0.05
0
25C
30
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
10
12
20 24
28
16
32
36
40
TJ = 25C
0.16
0.15
0.14
VGS = 10 V
0.13
0.12
15 V
0.11
0.10
16
24
28
12
20
32
36
40
10000
VGS = 10 V
ID = 10 A
VGS = 0 V
2.0
TJ = 125C
1000
1.6
1.2
0.8
100C
100
25C
10
1
25
0
25
50
75
100
125

Temperature
4394

and Gate Voltage

(NORMALIZED)
2.4
8.5
0.17

and Temperature
0.4
50
TJ = 55C
0
0
VDS 10 V
35
VGS = 10 V
150
50
100
150
200

MTB20N20E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
5000
Ciss
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
4000
3000
Crss
Ciss
2000
1000
Coss
Crss
0
10
0
VGS
10
15
20
25
VDS
4395
180
QT
10
Q1
150
VGS
Q2
120
90
60
ID = 20 A
TJ = 25C
30
Q3
VDS
0
0
10
50
20
30
40
0
60
1000
VDD = 30 V
ID = 20 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTB20N20E
100
tr
tf
td(off)
td(on)
10
1

10
100

20
VGS = 0 V
TJ = 25C
16
12
0
0.5
0.55
0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95

1.0
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4396
temperature.
MTB20N20E
SAFE OPERATING AREA
600
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
10 s
100 s
1 ms
1.0
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.01
1.0
100
10
0.1
ID = 20 A
500
400
300
200
100
0
25
1000

Safe Operating Area
150
50
75
100
125


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
t1
t2
0.01
SINGLE PULSE
0.01
1.0E05
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
t, TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
3.0
RJA = 50C/W
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
4397
MOTOROLA
Data Sheet
V
MTB23P06V
Designer's
TMOS
TMOS POWER FET

23 AMPERES
60 VOLTS
RDS(on) = 0.120 OHM

TM


D2PAK


Rating
Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
15
25
Vdc
Vpk

ID
ID
IDM
23
15
81
Adc

Derate above 25C
PD
90
0.60
3.0
Watts
W/C
TJ, Tstg
EAS
55 to 175
794
mJ
RJC
RJA
RJA
1.67
62.5
50
C/W
TL
260
Single Pulse DraintoSource Avalanche Energy STARTING TJ = 25C

(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 23 Apk, L = 3.0 mH, RG = 25 )
Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 seconds
Apk
REV 1
4398
MTB23P06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
60.5
Vdc
mV/C
10
100
100
nAdc
2.0
2.8
5.3
4.0
Vdc
mV/C
0.093
0.12
Ohm
2.1
3.3
3.2
5.0
11.5
Ciss
1160
1620
Coss
380
530
Crss
105
210
td(on)
13.8
30
tr
98.3
200
td(off)
41
80
tf
62
120
QT
38
50
Q1
7.0
Q2
18
Q3
14
2.2
1.8
3.5
trr
142
ta
100
tb
41
QRR
0.804
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 11.5 Adc, TJ = 150C)
VDS(on)
(VDS = 10.9 Vdc, ID = 11.5 Adc)
Vdc
gFS
Mhos
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 23 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 23 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

(Measured from contact screw on tab to center of die)
LD

LS
nH
nH

4399
MTB23P06V
40
VGS = 10V
TJ = 25C
40
8V
9V
7V
30
6V
20
10
VDS 10 V
35
50
5V
TJ = 55C
25C
30
100C
25
20
15
10
5
4V
0
TJ = 100C
0.12
25C
0.1
0.08
55C
0.06
0.04
0.02
5
10
15
20
25
30
35
40
45
0.12
TJ = 25C
0.115
0.11
0.105
VGS = 10 V
0.1
0.095
15 V
0.09
0.085
0.08

and Temperature
10
15
20
30
35
25
40
45
50

and Gate Voltage
1.8
100
VGS = 0 V
VGS = 10 V
ID = 11.5 A

(NORMALIZED)
0.14
1.4
VGS = 10 V
1.6
0.16
10
1.2
1
0.8
0.6
TJ = 125C
10
0.4
0.2
0
50
25
0
25
50
75
100 125
150

Temperature
4400
175
50
10
20
30
40
60

MTB23P06V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
4000
C, CAPACITANCE (pF)
Ciss
3000
VGS = 0 V
VDS = 0 V
TJ = 25C
Crss
2000
Ciss
1000
Coss
Crss
0
10
5
VGS
10
15
20
25
VDS
4401
30
QT
9
8
27
24
Q2
Q1
VGS
21
18
15
12
9
3
2
Q3
1
0
TJ = 25C
ID = 23 A
VDS
10
15
20
25
30
35
6
3
0
40
1000
t, TIME (ns)
10
MTB23P06V
TJ = 25C
ID = 23 A
VDD = 30 V
VGS = 10 V
100
tr
tf
td(off)
td(on)
10
1
1
10


100
25
TJ = 25C
VGS = 0 V
20
15
10
0.25
0.5
0.75
1.25
1.5
1.75
2.25
2.5
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4402
terms of energy, avalanche energy capability is not a
MTB23P06V
SAFE OPERATING AREA
800
VGS = 20 V
SINGLE PULSE
TC = 25C

100
100 s
10
1 ms
10 ms
dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
600
500
400
300
200
100
0
0.1
0.1
ID = 23 A
700
10
1
25
100
50
75
100
125
150
175

Safe Operating Area

1.00
D = 0.5
0.2
0.1
P(pk)
0.10
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
3
2.5
2.0
1.5
1
0.5
0
IS
RJA = 50C/W
25
50
75
100
125
175
150
4403
MOTOROLA
Data Sheet
V
MTB30N06VL
Designer's
TMOS
TMOS POWER FET

30 AMPERES
60 VOLTS
RDS(on) = 0.050 OHM

voltage transients.
TM

G
S

D2PAK

Static Parameters are the Same for both TMOS V and
TMOS EFET
Surface Mount Package Available in 16 mm 13inch/2500 Unit
Tape & Reel, Add T4 Suffix to Part Number
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
15
20
Vdc
Vpk

ID
ID
IDM
30
20
105
Adc

Derate above 25C
PD
90
0.6
3.0
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
154
mJ
RJC
RJA
RJA
1.67
62.5
50
C/W
TL
260
Rating

Apk
REV 3
4404
MTB30N06VL
Characteristic
Symbol
Min
Typ
Max
Unit
60
63
Vdc
mV/C
10
100
100
nAdc
1.0
1.5
4.0
2.0
Vdc
mV/C
0.033
0.05
Ohms
1.1
1.8
1.73
gFS
13
21
Mhos
Ciss
1130
1580
pF
Coss
360
500
Crss
95
190
td(on)
14
30
tr
260
520
td(off)
54
110
tf
108
220
QT
27
40
Q1
Q2
17
Q3
15
0.98
0.89
1.6
trr
86
ta
49
tb
37
QRR
0.228
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
Static DraintoSource OnResistance (VGS = 5 Vdc, ID = 15 Adc)
RDS(on)
(VGS = 5 Vdc, ID = 15 Adc, TJ = 150C)
VDS(on)
Forward Transconductance (VDS = 6.25 Vdc, ID = 15 Adc)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 30 Adc,
VGS = 5 Vdc)
ns
nC

Forward OnVoltage

(IS = 30 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4405
MTB30N06VL
50
60
VGS = 10 V
8V
TJ = 25C
6V
5V
40
4V
30
20
3V
25C
100C
40
30
20
0
0
0.08
10
0.06
TJ = 100C
0.05
0.04
25C
0.03
0.02
55C
0.01
0
0
10
20
30
40
60
50
0.06
TJ = 25C
0.05
VGS = 5 V
0.04
10 V
0.03
0.02
0.01
0

and Temperature
10
20
30
40
50
60

and Gate Voltage
1000
VGS = 5 V
ID = 15 A
VGS = 0 V
TJ = 125C
1.4

(NORMALIZED)
0.07
1.6
VGS = 10 V
1.8
50
10
10
0
TJ = 55C
VDS 10 V
60
1.2
1
0.8
0.6
100
100C
10
0.4
0.2
0
50
25
25
50
75
100 125
150

Temperature
4406
175
1
0
30
10
20
40
50
60

MTB30N06VL


switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
5000
C, CAPACITANCE (pF)
4500 C
iss
4000
VDS = 0 V
VGS = 0 V
TJ = 25C
3500
3000
Crss
2500
2000
1500
Ciss
1000
500
Coss
Crss
0
10
5
VGS
0
VDS
10
15
20
25
4407
30
4.5
27
24
QT
3.5
VGS
Q2
Q1
21
18
2.5
15
12
1.5
Q3
1
0.5
0
10
15
6
3
VDS
0
TJ = 25C
ID = 30 A
0
25
20
1000
TJ = 25C
ID = 30 A
VDD = 30 V
VGS = 5 V
t, TIME (ns)
MTB30N06VL
tr
tf
100
td(off)
td(on)
10
1
1
10
100



30
25
TJ = 25C
VGS = 0 V
20
15
10
5
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4408

temperature.
MTB30N06VL
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
160
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100

1000
10 s
100 s
10
1 ms
10 ms
dc
1
0.1
10
ID = 30 A
140
120
100
80
60
40
20
0
100
25
50
75
100
125
175
150

Safe Operating Area

1.00
D = 0.5
0.2
0.1
P(pk)
0.05
0.10
0.02
0.01
SINGLE PULSE
t1
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
3
2.5
2.0
1.5
1
0.5
0
IS
RJA = 50C/W
25
50
75
100
125
150
175
4409
MOTOROLA
Data Sheet
V
MTB30P06V
Designer's
TMOS
TMOS POWER FET

30 AMPERES
60 VOLTS
RDS(on) = 0.080 OHM

TM


D2PAK


Rating
Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
15
25
Vdc
Vpk

ID
ID
IDM
30
19
105
Adc

Derate above 25C
PD
125
0.83
3.0
Watts
W/C
TJ, Tstg
EAS
55 to 175
450
mJ
RJC
RJA
RJA
1.2
62.5
50
C/W
TL
260

Apk
REV 1
4410
MTB30P06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
62
Vdc
mV/C
10
100
100
nAdc
2.0
2.6
5.3
4.0
Vdc
mV/C
0.067
0.08
Ohm
2.0
2.9
2.8
5.0
7.9
Ciss
1562
2190
Coss
524
730
Crss
154
310
td(on)
14.7
30
tr
25.9
50
td(off)
98
200
tf
52.4
100
QT
54
80
Q1
9.0
Q2
26
Q3
20
2.3
1.9
3.0
trr
175
ta
107
tb
68
QRR
0.965
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 150C)
VDS(on)
(VDS = 8.3 Vdc, ID = 15 Adc)
Vdc
gFS
Mhos
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 30 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4411
MTB30P06V
60
60
TJ = 25C
40
30
6V
20
5V
10
0
7V
4V
0
50
25C
40
30
TJ = 55C
20
12
10
0.1
0.08
25C
0.06
55C
0.04
0.02
10
20
30
40
50
60
0.08
TJ = 25C
VGS = 10 V
0.07
15 V
0.06
0.05
0.04

and Temperature
10
20
30
40
50
60

and Gate Voltage
1.8
100
VGS = 0 V
VGS = 10 V
ID = 15 A
TJ = 125C

(NORMALIZED)
TJ = 100C
1.4
VGS = 10 V
1.6
0.12
100C
10
9V
VGS = 10V
50
VDS 10 V
8V
1.2
1
0.8
0.6
10
100C
0.4
0.2
0
50
25
0
25
50
75
100 125
150

Temperature
4412
175
50
60
10
20
30
40
70

MTB30P06V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
6000
Ciss
C, CAPACITANCE (pF)
5000
4000
VGS = 0 V
VDS = 0 V
TJ = 25C
Crss
3000
Ciss
2000
Coss
1000
Crss
0
10
5
VGS
10
15
20
25
VDS
4413
30
VGS
27
QT
24
8
Q2
Q1
21
18
15
12
VDS
1
0
TJ = 25C
ID = 30 A
Q3
10
20
30
40
50
6
3
0
60
1000
t, TIME (ns)
10
MTB30P06V
TJ = 25C
ID = 30 A
VDD = 30 V
VGS = 10 V
100
td(off)
tf
tr
td(on)
10
1
1
10


100

30
TJ = 25C
VGS = 0 V
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4414
MTB30P06V
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
450
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

1000
100
10 s
100 s
10
1 ms
10 ms
dc
ID = 30 A
400
350
300
250
200
150
100
50
0
1
0.1
10
1
25
100
50
75
100
125
150
175

Safe Operating Area

1.00
D = 0.5
0.2
0.1
0.10
P(pk)
0.05
0.02
0.01
t1
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
3
2.5
2.0
1.5
1
0.5
0
IS
RJA = 50C/W
Collector/Drain Pad Size 9 450 mils x 350 mils
25
50
75
100
125
175
150
4415
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTB33N10E
TMOS POWER FET

33 AMPERES
100 VOLTS
RDS(on) = 0.06 OHM


G
D2PAK
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
VDGR
100
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
33
20
99
Adc

Derate above 25C
PD
125
1.0
2.5
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
545
mJ

RJC
RJA
RJA
1.0
62.5
50
C/W
TL
260
Apk
REV 2
4416
MTB33N10E
Characteristic
Symbol
Min
Typ
Max
Unit
100
118
Vdc
mV/C
10
100
100
nAdc
2.0
7.0
4.0
Vdc
mV/C
0.04
0.06
Ohm
1.6
2.4
2.1
gFS
8.0
mhos
Ciss
1830
2500
pF
Coss
678
1200
Crss
559
1100
td(on)
18
40
tr
164
330
td(off)
48
100
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 33 Adc)
(ID = 16.5 Adc, TJ = 25C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Figure 8)
(VDS = 80 Vdc, ID = 33 Adc,
VGS = 10 Vdc)
tf
83
170
QT
52
110
Q1
12
Q2
32
Q3
24
1.0
0.98
2.0
trr
144
ta
108
ns
nC


(IS = 33 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns
tb
36
QRR
0.93

LD
4.5
nH

LS
7.5
nH


4417
MTB33N10E
90
90
TJ = 25C
VGS = 10 V
9V
70
60
8V
50
40
7V
30
20
6V
10
5V
2
50
100C
40
30
20
VGS = 10 V
TJ = 100C
0.07
0.06
25C
0.05
0.04
55C
0.03
0.02
6
25C
60
0.09
0.08
70
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
10
12
18
24 30 36 42 48
54
60
66
0.053
TJ = 25C
0.051
0.049
0.047
0.045
VGS = 10 V
0.043
0.041
15 V
0.039
0.037
11
17
23
29
35 41
47
53
59
65

and Gate Voltage
10000
2.0
VGS = 0 V
VGS = 10 V
ID = 16.5 A
1.6

(NORMALIZED)

and Temperature
1.8
TJ = 55C
10
0
0
VDS 10 V
80
80
1.4
1.2
1.0
TJ = 125C
1000
100C
100
25C
0.8
0.6
50
4418
25
25
50
75
100
125
150
10
20
30
40
50
60
70
80
90

Temperature

100
MTB33N10E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
5000
4500
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
4000
3500
3000
Crss
2500
Ciss
2000
1500
Coss
1000
500
0
10
Crss
5
0
VGS
10
15
20
25
VDS
4419
140
VGS
12
120
QT
100
10
Q2
8
80
Q1
60
6
ID = 33 A
TJ = 25C
40
Q3
20
VDS
0
0
10
20
30
40
50
0
60
1000
VDD = 50 V
ID = 33 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
14
MTB33N10E
tr
100
tf
td(off)
td(on)
10
1

10
100


33
30
27
VGS = 0 V
TJ = 25C
24
21
18
15
12
9
6
3
0
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1.0 1.05
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4420
temperature.
MTB33N10E
SAFE OPERATING AREA
550
VGS = 20 V
SINGLE PULSE
TC = 25C
100

1000
100 s
10
1 ms
1.0
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.01
0.1
ID = 33 A
450
400
350
300
250
200
150
100
50
0
100
1.0
10
500

Safe Operating Area
25
50
75
100
125
150

1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
t1
t2
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
3.0
RJA = 50C/W
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
4421
MOTOROLA
Product Preview
MTB35N06ZL
HDTMOS E-FET.
TMOS POWER FET

35 AMPERES
60 VOLTS
RDS(on) = 26 m

This advanced high voltage TMOS EFET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a draintosource diode
with fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, PWM motor controls and
other inductive loads, the avalanche energy capability is specified
to eliminate the guesswork in designs where inductive loads are
voltage transients.
Avalanche Energy Capability Specified at Elevated
Temperature
Internal SourcetoDrain Diode Designed to Replace External
Zener Transient SuppressorAbsorbs High Energy in the
Avalanche Mode
ESD Protected. 400 V Machine Model Level and 4000 V
Human Body Model Level.
G
D2PAK
S

Symbol
Value
Unit
VDSS
60
Vdc
VDGR
60
Vdc

GatetoSource Voltage NonRepetitive (tp 10 ms)
VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
35
22.8
105
Adc

Derate above 25C
PD
94
0.63
3.0
Watts
W/C
TJ, Tstg
55 to 175

(VDD = 25 Vdc, VDS = 60 Vdc, VGS = 5.0 Vdc, Peak IL = 35 Apk, L = 0.3 mH, RG = 25 )
EAS
184
mJ

RJC
RJA
RJA
1.6
62.5
50
C/W
TL
260
Rating
Apk
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
4422
MTB35N06ZL
Characteristic
Symbol
Min
Typ
Max
Unit
60
52
Vdc
mV/C
10
100
5.0
Adc
1.0
1.5
4.0
2.0
Vdc
mV/C
22
26
0.78
0.7
1.1
1.0
gFS
10
12
mhos
Ciss
1600
pF
Coss
560
Crss
140
td(on)
40
OFF CHARACTERISTICS
(Cpk 3.0)
V(BR)DSS

IDSS
IGSS
Adc
(Cpk 3.0)
VGS(th)

(Cpk 2.0)
(VGS = 5.0 Vdc, ID = 11.5 Adc)
RDS(on)
DraintoSource OnVoltage (VGS = 5.0 Vdc)

(ID = 23 Adc)
(ID = 11.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time

5 0 Vdc,
Vdc
VGS(on) = 5.0
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 23 Adc,
VGS = 5.0 Vdc)
ns
tr
250
td(off)
130
tf
170
QT
45
Q1
8.0
Q2
22
Q3
19
0.92
0.81
1.1
trr
43
ta
24
tb
20
QRR
0.055
3.5
4.5
7.5
nC

Forward OnVoltage

(IS = 23 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4423
MOTOROLA
Data Sheet
V
MTB36N06V
Designer's
TMOS
TMOS POWER FET

32 AMPERES
60 VOLTS
RDS(on) = 0.04 OHM

voltage transients.
TM

G
S

D2PAK

TMOS EFET
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
20
25
Vdc
Vpk

ID
ID
IDM
32
22.6
112
Adc

Derate above 25C
PD
90
0.6
3.0
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
205
mJ
RJC
RJA
RJA
1.67
62.5
50
C/W
TL
260
Rating
GateSource Voltage NonRepetitive (tp 50 s)

Apk
REV 2
4424
MTB36N06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
61
Vdc
mV/C
10
100
100
nAdc
2.0
2.6
6.0
4.0
Vdc
mV/C
0.034
0.04
Ohm
1.25
1.54
1.47
gFS
5.0
7.83
mhos
Ciss
1220
1700
pF
Coss
337
470
Crss
74.8
150
td(on)
14
30
tr
138
270
td(off)
54
100
tf
91
180
QT
39
50
Q1
Q2
17
Q3
13
1.03
0.94
2.0
trr
92
ta
64
tb
28
QRR
0.332
3.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 32 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4425
MTB36N06V
72
TJ = 100C
VDS 10 V
7V
9V
72
VGS = 10 V
TJ = 25C
54
8V
6V
36
5V
18
25C
54
36
18
55C
4V
0
0.1
0.052
0.08
TJ = 100C
25C
0.04
TJ = 25C
0.044
0.06
VGS = 10 V
0.036
55C
0.02
0
0
18
54
36
72
0.028
15 V
18

and Temperature
36
54
72

and Gate Voltage
1.8
1000
VGS = 0 V
VGS = 10 V
ID = 16 A
TJ = 125C

(NORMALIZED)
VGS = 10 V
1.6
1.4
1.2
1
100
100C
10
25C
0.8
0.6
50
1
25
25
50
75
100
125
150

Temperature
4426
175
30
10
20
40
50
60

MTB36N06V


switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
4000
C, CAPACITANCE (pF)
VDS = 0 V
3000
VGS = 0 V
TJ = 25C
Ciss
2000
Ciss
Crss
1000
Coss
Crss
0
10
0
VGS
10
15
20
25
VDS
4427
QT
25
10
VGS
20
Q2
Q1
15
6
4
Q3
2
0
10
TJ = 25C
ID = 32 A
VDS
0
10
15
20
25
30
35
40
1000
TJ = 25C
ID = 32 A
VDD = 30 V
VGS = 10 V
t, TIME (ns)
30
12
MTB36N06V
tr
tf
100
td(off)
td(on)
10
1
1
10


100

32
TJ = 25C
VGS = 0 V
24
16
0
0.5 0.55
0.6 0.65
0.7 0.75
0.8 0.85 0.9
0.95
1.05
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4428

temperature.
MTB36N06V
SAFE OPERATING AREA
225
VGS = 20 V
SINGLE PULSE
TC = 25C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

1000
100
10 s
100 s
10
1 ms
10 ms
dc
1
1
0.1
10
ID = 32 A
200
175
150
125
100
75
50
25
0
100
25
50
75
100
125
175
150

Safe Operating Area

1.00
D = 0.5
0.2
0.1
P(pk)
0.10 0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
RJA = 50C/W
2.5
2.0
1.5
1
0.5
0
25
50
75
100
125
175
150
4429
MOTOROLA
Data Sheet
HDTMOS E-FET.
Designer's
MTB50P03HDL
TMOS POWER FET

LOGIC LEVEL
50 AMPERES
30 VOLTS
RDS(on) = 0.025 OHM

highcell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a draintosource diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.


D2PAK
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
30
Vdc
VDGR
30
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
50
31
150
Adc

Derate above 25C
Total Power Dissipation @ TC = 25C, when mounted with the minimum recommended pad size
PD
125
1.0
2.5
Watts
W/C
Watts
Rating
Apk
TJ, Tstg
55 to 150

EAS
1250
mJ

RJC
RJA
RJA
1.0
62.5
50
C/W
TL
260
REV 1
4430
MTB50P03HDL
Characteristic
Symbol
Min
Typ
Max
30
26
10
100
100
1.0
1.5
4.0
2.0
20.9
25
0.83
1.5
1.3
15
20
Ciss
3500
4900
Coss
1550
2170
Crss
550
770
td(on)
22
30
tr
340
466
td(off)
90
117
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS

IDSS

IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 3.0) (3)

(VGS = 5.0 Vdc, ID = 25 Adc)
(Cpk 3.0) (3)
DrainSource OnVoltage (VGS = 5.0 Vdc)

(ID = 50 Adc)
(ID = 25 Adc, TJ =125C)
VGS(th)
Vdc
RDS(on)
mOhm
VDS(on)
(VDS = 5.0 Vdc, ID = 25 Adc)
mV/C
Vdc
gFS
mhos
Input Capacitance
Output Capacitance
Vd VGS = 0 Vdc,
Vd
(VDS = 25 Vdc,
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD= 15 Vdc, ID = 50 Adc,

5 0 Vdc,
Vdc
VGS = 5.0
RG = 2.3 )
Fall Time
ns
tf
218
300
QT
74
100
Q1
13.6
Q2
44.8
Q3
35
2.39
1.84
3.0
trr
106
ta
58
tb
48
QRR
0.246

LD
3.5
nH

LS
7.5
nH
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 24 Vdc, ID = 50 Adc,
VGS = 5.0 Vdc)
nC

Forward OnVoltage

(IS = 50 Adc, VGS = 0 Vdc, TJ = 125C)

(S Figure
(See
Fi
15)
dIS/dt = 100 A/s)
VSD
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4431
MTB50P03HDL
100
TJ = 25C
VGS = 10 V
8V
80
6V
4V
4.5 V
60
VDS 5 V
5V
3.5 V
40
3V
20
100
TJ = 55C
25C
100C
80
60
40
20
2.5 V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.9
2.3
2.7
3.9
3.5
3.1
VGS = 5 V
0.027
0.025
TJ = 100C
0.023
25C
0.021
0.019
55C
0.017
0.015
0
1.5
2.0
1.8
20
40
60
80
100
0.029
4.3
0.022
VGS = 5 V
TJ = 25C
0.021
0.020
0.019
0.018
0.017
10 V
0.016
0.015
20
40
60
80
100

and Temperature

and Gate Voltage
1.35
1.25
1000
VGS = 0 V
VGS = 5 V
ID = 25 A
I DSS, LEAKAGE (nA)

(NORMALIZED)
1.15
1.05
TJ = 125C
100
0.95
100C
0.85
50
4432
10
25
25
50
75
100
125
150
10
15
20
25

Temperature
Figure 6. DraintoSource Leakage

30
MTB50P03HDL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
14000
VGS = 0 V
C, CAPACITANCE (pF)
VDS = 0 V
C
12000 iss
TJ = 25C
10000
8000
Crss
6000
Ciss
4000
Coss
2000
Crss
0
10
5
VGS
10
15
20
25
VDS
4433
30
QT
25
VGS
Q1
Q2
20
15
3
ID = 50 A
TJ = 25C
10
5
1
Q3
0
10
VDS
20
30
40
50
60
70
1000
t, TIME (ns)
MTB50P03HDL
VDD = 30 V
VGS = 10 V
ID = 50 A
TJ = 25C
tr
tf
td(off)
100
td(on)
0
80
10
10
RG, GATE RESISTANCE (Ohms)



snappy.

these losses.
50
VGS = 0 V
TJ = 25C
40
30
20
10
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
4434
MTB50P03HDL
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).

1000
VGS = 20 V
SINGLE PULSE
TC = 25C
100
100 s
1 ms
10
1
0.1
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
1400
ID = 50 A
1200
1000
800
600
400
200
0
10
100
25
50
75
100
125
150

Safe Operating Area

4435
MTB50P03HDL
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
3
2.5
2.0
1.5
1
0.5
0
IS
RJA = 50C/W
25
50
75
100
125
150
4436
MOTOROLA
Product Preview
MTB52N06V
TMOS V
TMOS POWER FET

52 AMPERES
60 VOLTS
RDS(on) = 0.022 OHM

voltage transients.
TM
G
S

D2PAK

Rating
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
20
25
Vdc
Vpk

ID
ID
IDM
52
41
182
Adc

Derate above 25C
PD
165
1.1
3.0
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
406
mJ
RJC
RJA
RJA
0.91
62.5
50
C/W
TL
260
DrainSource Voltage

Apk
4437
MTB52N06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
TBD
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
TBD
4.0
Vdc
mV/C
0.019
0.022
Ohm
1.4
1.2
gFS
17
25
mhos
Ciss
1700
2380
pF
Coss
500
700
Crss
150
300
td(on)
15
30
tr
130
260
td(off)
68
140
tf
70
140
QT
70
80
Q1
10
Q2
30
Q3
20
1.0
0.9
1.5
trr
90
ta
80
tb
10
QRR
0.3
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 26 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 52 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 52 Adc, VGS = 0 Vdc, TJ = 150C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4438
MOTOROLA
Product Preview
MTB52N06VL
TMOS V
TMOS POWER FET

52 AMPERES
60 VOLTS
RDS(on) = 0.025 OHM

voltage transients.
TM

Rating

D2PAK
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
15
25
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
52
41
182
Adc

Derate above 25C
PD
165
1.1
3.0
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
406
mJ
RJC
RJA
RJA
0.91
62.5
50
C/W
TL
260

Junction to Ambient
Apk
4439
MTB52N06VL
Characteristic
Symbol
Min
Typ
Max
Unit
60
TBD
Vdc
mV/C
10
100
100
nAdc
1.0
1.5
TBD
2.0
Vdc
mV/C
0.022
0.025
Ohm
1.5
1.3
gFS
17
30
Mhos
Ciss
1600
2240
pF
Coss
550
770
Crss
170
340
td(on)
18
40
tr
370
740
td(off)
90
180
tf
170
340
QT
45
60
Q1
12
Q2
22
Q3
18
1.0
0.9
1.5
trr
93
ta
65
tb
28
QRR
0.3
3.5
4.5
7.5
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = .25 mAdc)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 5 Vdc, ID = 26 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time

VGS = 5 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 52 Adc,

VGS = 5 Vdc)
ns
nC

Forward OnVoltage

(IS = 52 Adc, VGS = 0 Vdc, TJ = 150 C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4440
MOTOROLA
Product Preview
MTB55N06Z
TMOS E-FET.
TMOS POWER FET

55 AMPERES
60 VOLTS
RDS(on) = 16 m

voltage transients.
Temperature
Avalanche Mode
G
D2PAK
S

Symbol
Value
Unit
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
20
30
Vdc
Vpk

ID
ID
IDM
55
35.5
165
Adc

Derate above 25C
PD
136
0.91
3.0
Watts
W/C
Watts
TJ, Tstg
55 to 175

(VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25 )
EAS
454
mJ

RJC
RJA
RJA
1.1
62.5
50
C/W
TL
260
Rating
Apk
4441
MTB55N06Z
Characteristic
Symbol
Min
Typ
Max
Unit
60
53
Vdc
mV/C
10
100
5.0
Adc
2.0
3.0
6.0
4.0
Vdc
mV/C
14
16
0.825
0.74
1.2
1.0
gFS
12
15
mhos
Ciss
1390
1950
pF
Coss
520
730
Crss
119
238
td(on)
27
54
OFF CHARACTERISTICS
(Cpk 2.0)
V(BR)DSS

IDSS
IGSS
Adc
(Cpk 2.0)
VGS(th)

(Cpk 2.0)
RDS(on)
DraintoSource OnVoltage (VGS = 10 Vdc)

(ID = 30 Adc)
(ID = 15 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS(on) = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
tr
157
314
td(off)
116
232
tf
126
252
QT
40
56
Q1
7.0
Q2
18
Q3
15
0.93
0.82
1.1
trr
57
ta
32
tb
25
QRR
0.11
3.5
4.5
7.5
ns
nC

Forward OnVoltage

(IS = 30 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4442
MOTOROLA
Data Sheet
HDTMOS E-FET.
Designer's
MTB60N06HD
TMOS POWER FET

60 AMPERES
60 VOLTS
RDS(on) = 0.014 OHM

voltage transients.

D2PAK
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
20
30
Vdc
Vpk

ID
ID
IDM
60
42.3
180
Adc

Derate above 25C
PD
125
1.0
2.5
Watts
W/C
Watts
TJ, Tstg
55 to 150

(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25 )
EAS
540
mJ

RJC
RJA
RJA
1.0
62.5
50
C/W
TL
260
Apk
(1) When mounted with the minimum recommended pad size.

REV 2
4443
MTB60N06HD
Characteristic
Symbol
Min
Typ
Max
60
71
10
100
100
2.0
3.0
7.0
4.0
0.011
0.014
1.0
0.9
15
20
Ciss
1950
2800
Coss
660
920
Crss
147
300
td(on)
14
26
tr
197
394
td(off)
50
102
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS

IDSS

IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 3.0) (3)

(Cpk 3.0) (3)

(ID = 60 Adc)
(ID = 30 Adc, TJ =125C)
VGS(th)
Vdc
RDS(on)
Ohm
VDS(on)
(VDS = 4.0 Vdc, ID = 30 Adc)
mV/C
Vdc
gFS
mhos
Input Capacitance
Output Capacitance
Vd VGS = 0 Vdc,
Vd
(VDS = 25 Vdc,
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
ns
tf
124
246
QT
51
71
Q1
12
Q2
24
Q3
21
0.99
0.89
1.0
trr
60
ta
36
tb
24
QRR
0.143

LD
4.5
nH

LS
7.5
nH
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 48 Vdc, ID = 60 Adc,
VGS = 10 Vdc)
nC

Forward OnVoltage

(IS = 60 Adc, VGS = 0 Vdc, TJ = 125C)

(S Figure
(See
Fi
15)
dIS/dt = 100 A/s)
VSD
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4444
MTB60N06HD
120
120
8V
VGS = 10 V
7V
VDS 10 V
9V
100
TJ = 25C
80
6V
60
40
5V
20
100
80
60
40
100C
25C
20
TJ = 55C
0.5
1.5
1.0
2.5
2.0
3.0
3.5
4.0
4.5
5.0
3.6
4.4
6.0
5.2
TJ = 100C
0.016
0.014
25C
0.012
0.010
55C
0.008
10
20
30
40
50
60
70
80
90 100 110 120
7.6
6.8
0.018
2.8
VGS = 10 V
0.006
0
2.0
0.020
0.0132
TJ = 25C
0.0128
0.0124
0.0120
VGS = 10 V
0.0116
0.0112
0.0108
15 V
0.0104
0.0100
10
20
30
40
50
60
70
80
90
100 110 120

and Temperature

and Gate Voltage
1.8
1.6
1000
VGS = 0 V
VGS = 10 V
ID = 30 A
TJ = 125C
I DSS, LEAKAGE (nA)

(NORMALIZED)
1.4
1.2
1.0
100
100C
25C
10
0.8
0.6
50
1
25
25
50
75
100
125
150
10
20
30
40
50

Temperature

60
4445
MTB60N06HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
5000
VDS = 0 V
VGS = 0 V
Ciss
TJ = 25C
C, CAPACITANCE (pF)
4000
3000
Crss
Ciss
2000
Coss
1000
Crss
0
10
0
VGS
10
15
20
25
VDS
4446
60
QT
10
50
VGS
40
Q1
Q2
30
20
ID = 60 A
TJ = 25C
10
2
Q3
0
VDS
16
24
32
40
48
0
56
1000
VDD = 30 V
ID = 60 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTB60N06HD
tr
tf
100
td(off)
td(on)
10
10


100

these losses.
snappy.
60
50
VGS = 0 V
TJ = 25C
40
30
20
10
0
0.5
0.6
0.7
0.8
0.9
1.0
4447
MTB60N06HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).

1000
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100
100 s
10
1 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
4448
1.0
10 ms
dc
10
600
ID = 60 A
500
400
300
200
100
0
100
25
50
75
100
125
150

Safe Operating Area

MTB60N06HD
(NORMALIZED)

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E01
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
3
2.5
RJA = 50C/W
2.0
1.5
1
0.5
0
25
50
75
100
125
150
4449
MOTOROLA
MTB75N03HDL
HDTMOS E-FET.
High Density Power FET
TMOS POWER FET

LOGIC LEVEL
75 AMPERES
25 VOLTS
RDS(on) = 9 mOHM

voltage transients.
G
Ultra Low RDS(on), HighCell Density, HDTMOS
Short Heatsink Tab Manufactured Not sheared

D2PAK
S

Rating
Symbol
Value
Unit
VDSS
25
Vdc
VDGR
25
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
75
59
225
Adc

Derate above 25C
PD
125
1.0
2.5
Watts
W/C
Watts
55 to 150
Apk

(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 75 Apk, L = 0.1 mH, RG = 25 )
EAS
280
mJ

RJC
RJA
RJA
1.0
62.5
50
C/W
TL
260
(1) When mounted with the minimum recommended pad size.
REV 2
4450
MTB75N03HDL
Characteristic
Symbol
Min
Typ
Max
25
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS
Vdc
mV/C

IDSS
GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 V)
IGSS
Adc
100
500
100
1.0
1.5
2.0
nAdc
(Cpk 3.0) (3)

(VGS = 5.0 Vdc, ID = 37.5 Adc)
(Cpk 2.0) (3)
VGS(th)
Vdc
mV/C

(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 125C)
RDS(on)
6.0
9.0
0.68
0.6
gFS
15
55
mhos
pF
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Ciss
4025
5635
Coss
1353
1894
Crss
307
430
td(on)
24
48

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDS= 15 Vdc, ID = 75 Adc,

VGS = 5.0
5 0 Vdc,
Vdc
RG = 4.7 )
Fall Time
Gate Charge
((VDS = 24 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc)
tr
493
986
td(off)
60
120
tf
149
300
QT
61
122
Q1
14
28
Q2
33
66
Q3
27
54
0.97
0.87
1.1
trr
58
ta
27
tb
30
QRR
0.088
ns
nC

Forward OnVoltage

(IS = 75 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 75 Adc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4451
MTB75N03HDL
VGS = 10 V
5V
8V
120
150
4.5 V TJ = 25C
150
4V
6V
90
3.5 V
60
3V
30
VDS 10 V
120
90
60
100C
TJ = 55C
2.5 V
0
0.2
0.4 0.6 0.8

1
1.2
1.4 1.6
1.8
0
1.5
TJ = 100C
25C
55C
0.004
0.002
30
60
90
120
150
VGS = 5 V
0.006
2
2.5
3
3.5
4
0.009
TJ = 25C
0.008
0.007
VGS = 5 V
0.006
10 V
0.005
0.004
75
50
100

and Temperature

and Gate Voltage
10000
1.2
0.8
25
125
150
TJ = 125C
VGS = 10 V
ID = 37.5 A
1.6
4.5
0.01

(NORMALIZED)
0.008
25C
30
100C
1000
100
10
0.4
25C
VGS = 0 V
50
25
0
25
50
75
100
125

Temperature
4452
150
5
10
15
20
25
30

MTB75N03HDL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
15000
C, CAPACITANCE (pF)
12000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
9000
Crss
Ciss
6000
Coss
3000
0
10
Crss
5
0
VGS
10
15
20
25
VDS
4453
28
24
QT
20
5
Q2
Q1
VGS
16
12
3
TJ = 25C
ID = 75 A
4
VDS
Q3
0
0
10
20
30
40
50
60
0
70
10000
t, TIME (ns)
MTB75N03HDL
tr
1000
TJ = 25C
ID = 75 A
VDD = 15 V
VGS = 5 V
tf
td(off)
td(on)
100
10
1
10
100



these losses.
snappy.
75
60
TJ = 25C
VGS = 0 V
45
30
15
0
0.5
0.6
0.7
0.8
0.9
4454
MTB75N03HDL
SAFE OPERATING AREA
(TJ(MAX) TC)/(RJC).
280
1000
VGS = 20 V
SINGLE PULSE
TC = 25C

100
100 s
1 ms
10
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
dc
10
100

Safe Operating Area
ID = 75 A
240
200
160
120
80
40
0
25
50
75
100
125
150

4455
MTB75N03HDL
(NORMALIZED)

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E01
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
3
2.5
2.0
1.5
1
0.5
0
IS
RJA = 50C/W
25
50
75
100
125
150
4456
MOTOROLA
Data Sheet
HDTMOS E-FET.
Designer's
MTB75N05HD
TMOS POWER FET

75 AMPERES
50 VOLTS
RDS(on) = 9.5 m

voltage transients.
G
D2PAK
S

Rating
Symbol
Value
Unit
VDSS
50
Volts
VDGR
50
VGS
20

ID
ID
IDM
75
65
225
Amps

Derate above 25C
Total Power Dissipation @ TA = 25C (minimum footprint, FR4 board)
PD
125
1.0
2.5
Watts
W/C
Watts
TJ, Tstg
55 to 150

(VDD = 25 V, VGS = 10 V, Peak IL = 75 A, L = 0.177 mH, RG = 25 )
EAS
500
mJ

Thermal Resistance Junction to Ambient (minimum footprint, FR4 board)
RJC
RJA
RJA
1.0
62.5
50
C/W
Maximum Temperature for Soldering Purposes, 1/8 from case for 10 seconds
TL
260
REV 2
4457
MTB75N05HD
Characteristic
Symbol
Min
Typ
Max
Unit
50
54.9
Vdc
mV/C
10
100
100
2.0
6.3
4.0
7.0
9.5
0.63
0.34
gFS
15
mhos
Ciss
2600
2900
pF
Coss
1000
1100
Crss
230
275
td(on)
15
30
tr
170
340
td(off)
70
140
tf
100
200
QT
71
100
Q1
13
Q2
33
Q3
26
0.97
0.80
0.68
1.00
Vdc
trr
57
ns
ta
40
tb
17
QRR
0.17
3.5
4.5
7.5
OFF CHARACTERISTICS
(Cpk 2)(2)

(VGS = 0, ID = 250 Adc)
V(BR)DSS

(VDS = 50 V, VGS = 0)
(VDS = 50 V, VGS = 0, TJ = 125C)
IDSS

(VGS = 20 Vdc, VDS = 0)
IGSS
Adc
nAdc
(Cpk 1.5)(2)
Static DraintoSource OnResistance(3)

(Cpk 3.0)(2)
DraintoSource OnVoltage (VGS = 10 Vdc)(3)

(ID = 75 A)
(ID = 20 Adc, TJ = 125C)
VGS(th)
RDS(on)
VDS(on)
Vdc
mV/C
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 V,
V VGS = 0
0, (Cpk 2
2.0)
0)(2)
f = 1.0 MHz)
(Cpk 2.0)(2)
(Cpk 2.0)
2 0)(2)

TurnOn Delay Time
(VDD = 25 V, ID = 75 A,
VGS = 10 V,
V
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 40 V, ID = 75 A,
VGS = 10 V)
ns
nC

Forward OnVoltage
(IS = 75 A, VGS = 0)
(Cpk 10)(2)
(IS = 20 A, VGS = 0)
(IS = 20 A, VGS = 0, TJ = 125C)
VSD

((IS = 37.5 A, VGS = 0,
dIS/dt = 100 A/s)

LD

LS
(1)
(2)
(3)
(4)
nH
Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

Reflects Typical Values. Cpk = ABSOLUTE VALUE OF (SPEC AVG) / 3 * SIGMA).
For accurate measurements, good Kelvin contact required.
Switching characteristics are independent of operating junction temperature.
4458
MTB75N05HD
TYPICAL ELECTRICAL CHARACTERISTICS(1)
160
160
TJ = 25C
120
100
80
6V
60
40
5V
20
0
0.5
1.5
2.5
3.5
80
60
TJ = 55C
100C
40
4.5
25C
0
140
160
0.012
TJ = 100C
0.01
25C
0.008
0.006
55C
0.004
20
40
60
80
100
120
140
0.009
TJ = 25C
0.008
VGS = 10 V
0.007
15 V
0.006
0.005
0
20
40
60
80
100
120

and Temperature

and Gate Voltage
10000
2
VGS = 10 V
ID = 37.5 A
VGS = 0 V
1.5
I DSS, LEAKAGE (nA)

(NORMALIZED)
100
VGS = 10 V
120
20
0.014
0.002
VDS 10 V
140
140
7V
VGS = 10 V
1000
TJ = 125C
100
100C
10
0.5
25C
0
50
0
25
25
50
75
100
125
150
10
15
20
25
30
35
40

Temperature

45
50
(1)Pulse Tests: Pulse Width 250 s, Duty Cycle 2%.
4459
MTB75N05HD

readily achievable with boardmounted components. Most
switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
voltage change in a RC network. The equations are:
8000
VDS = 0
VGS = 0
TJ = 25C
C, CAPACITANCE (pF)
7000
6000
Ciss
5000
4000
3000
Ciss
Crss
Coss
2000
Crss
1000
0
10
0
VGS
10
15
20
25
VDS
4460
60
QT
10
50
VGS
40
Q1
Q2
30
TJ = 25C
ID = 75 A
20
10
2
VDS
Q3
0
75
25
50
1000
TJ = 25C
ID = 75 A
VDD = 35 V
VGS = 10 V
tf
tr
100
t, TIME (ns)
12
MTB75N05HD
td(off)
td(on)
10
1
1

10
100


these losses.
snappy.
40
80
di/dt = 300 A/s

30
TJ = 25C
70 VGS = 0 V
60
50
40
30
20
10
STANDARD CELL DENSITY

trr
HIGH CELL DENSITY
trr
tb
ta
20
10
0
10
20
30
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
40
120 100 80 60
40 20
0
t, TIME (ns)
20
40
60
80
4461
MTB75N05HD
SAFE OPERATING AREA
(TJ(MAX) TC)/(RJC).
500
VGS = 20 V
SINGLE PULSE
TC = 25C
100

1000
10 s
100 s
10
1 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
dc
1
10
400
350
300
250
200
150
100
50
0
25
100

Safe Operating Area
(NORMALIZED)
ID = 75 A
450
150
50
75
100
125
175

1
D = 0.5
0.2
P(pk)
0.1
0.1
0.05
0.02
t1
t2
0.01
RJC(t) = r(t) RJC

RJC = 1.0C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
SINGLE PULSE
0.01
1.0E 05
1.0E 04
1.0E 03
1.0E 02
t, TIME (s)
1.0E 01
1.0E+00
1.0E+01
4462
MTB75N05HD
3
RJA = 50C/W
2.5
2.0
1.5
1
0.5
0
25
50
75
100
125
150
4463
MOTOROLA
Data Sheet
TMOS E-FET.
DPAK for Surface Mount
Designer's
MTD1N50E
TMOS POWER FET

1.0 AMPERE
500 VOLTS
RDS(on) = 5.0 OHM

degrading performance over time. In addition this advanced TMOS

Surface Mount Package Available in 16 mm, 13inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number

DPAK
S

Rating
Symbol
Value
Unit
VDSS
500
Vdc
VDGR
500
Vdc

Nonrepetitive (tp 10 ms)
VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
1.0
0.8
3.0
Adc

Derate above 25C
Total Power Dissipation @ TA = 25C, when mounted to minimum recommended pad size
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
45
mJ

Junction to Ambient
Junction to Ambient, when mounted to minimum recommended pad size
RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
Apk
REV 1
4464
MTD1N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
480
Vdc
mV/C
10
100
100
nAdc
2.0
3.2
6.0
4.0
Vdc
mV/C
4.3
5.0
Ohm
4.5
6.0
5.3
gFS
0.5
0.9
mhos
Ciss
215
315
pF
Coss
30.2
42
Crss
6.7
12
td(on)
8.0
20
tr
9.0
10
td(off)
14
30
tf
17
30
QT
7.4
9.0
Q1
1.6
Q2
3.8
Q3
5.0
0.81
0.68
1.2
trr
141
ta
82
tb
58.5
QRR
0.65
3.5
4.5
7.5
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 0.25 Adc)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125C)
VDS(on)
Forward Transconductance (VDS = Vdc, ID = 0.5 Adc)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 10 Vd
Vdc,
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 250 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4465
MTD1N50E
2.0
2.0
7V
8V
1.50
VDS 10 V
1.75
1.75
VGS = 10 V
TJ = 25C
6V
1.25
1.0
0.75
0.50
5V
1.50
1.25
1.0
0.75
0.50
TJ = 100C
25C
0.25
0.25
55C
2
10
12
14
16
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
1.75
2.0
10
VGS = 10 V
TJ = 100C
6
25C
4
55C
2
2.5
0.4
0.8
1.2
1.6
2.0
0
2.0
6.0
TJ = 25C
5.5
5.0
VGS = 10 V
4.5
15 V
4.0
3.5
3.0
0
0.25
0.50
0.75
1.0
1.25
1.50

and Temperature

and Gate Voltage
10000
2.5
2.0
VGS = 0 V
VGS = 10 V
ID = 0.5 A
TJ = 125C
1000

(NORMALIZED)
1.5
1.0
100C
100
25C
10
0.5
0
50
4466
25
25
50
75
100
125
150
100
200
300
400

Temperature

500
MTD1N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
500
1000
VDS = 0 V
450
VGS = 0 V
TJ = 25C
VGS = 0 V
TJ = 25C
350
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
400
300
Ciss
250
200
150
100
Crss
50
0
10
0
VGS
100
Coss
10
Crss
Coss
Crss
5
Ciss
10
15
20
25
VDS
10
100
1000

Variation
4467
360
QT
10
300
VGS
Q1
240
Q2
180
6
4
120
ID = 1 A
TJ = 25C
VDS
Q3
0
0
60
4
0
8
100
VDD = 250 V
ID = 1 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTD1N50E
tf
td(off)
td(on)
10
tr

10
100

1.0
VGS = 0 V
TJ = 25C
0.8
0.6
0.4
0.2
0.5
0.54
0.58
0.62
0.66
0.70
0.74
0.78
0.82
SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define the
maximum simultaneous draintosource voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (TC) of 25C. Peak
Data and Its Use.
time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle must not exceed
(TJ(MAX) TC)/(RJC).
4468

temperature.
MTD1N50E
SAFE OPERATING AREA
50
VGS = 20 V
SINGLE PULSE
TC = 25C

10
10 s
1.0
100 s
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
100
40
30
20
10
1000
ID = 1 A

Safe Operating Area
25
50
75
100
125
150


1.0
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4469
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD1N60E
TMOS POWER FET

1.0 AMPERE
600 VOLTS
RDS(on) = 8.0 OHM


Fast Recovery Diode

DPAK
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
600
Vdc
VDGR
600
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
1.0
0.8
3.0
Adc

Derate above 25C
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
45
mJ

Junction to Ambient
RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
Apk
REV 1
4470
MTD1N60E
Characteristic
Symbol
Min
Typ
Max
Unit
600
720
Vdc
mV/C
10
100
100
nAdc
2.0
3.2
6.0
4.0
Vdc
mV/C
5.9
8.0
Ohm
9.6
8.4
gFS
0.5
0.8
mhos
Ciss
224
310
pF
Coss
27
40
Crss
6.0
10
td(on)
8.8
20
tr
6.8
14
td(off)
15
30
tf
20
40
QT
7.1
11
Q1
1.7
Q2
3.2
Q3
3.9
0.82
0.7
1.4
trr
464
ta
36
tb
428
QRR
0.629
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 300 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4471
MTD1N60E
TJ = 25C
1.8
VGS = 10 V
7V
6V
1.6
1.4
1.2
1
0.8
0.6
5V
0.4
VDS 10 V
1.6
1.2
0.8
100C
0.4
0.2
TJ = 55C
2
10
12
14
18
16
4.4
4.8
5.2
5.6
10
8
25C
6
4
55C
2
0.2
1.2 1.4
0.8
0.6
1
0.4
1.6
1.8
6.4
6.8
9
TJ = 25C
8.5
8
7.5
7
VGS = 10 V
6.5
15 V
6
5.5
5

and Temperature
0.2
0.4
1.2 1.4
0.6 0.8
1
1.6
1.8

and Gate Voltage
2.4
1000
VGS = 0 V
VGS = 10 V
ID = 0.5 A
TJ = 125C

(NORMALIZED)
3.2 3.6
TJ = 100C
2.8
VGS = 10 V
2.4
12
16
14
20
25C
1.6
1.2
0.8
100
100C
10
25C
0.4
0
50
25
0
25
50
75
100
125

Temperature
4472
150
500
100
200
300
400
600

MTD1N60E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
500
VDS = 0 V
450
1000
TJ = 25C
VGS = 0 V
TJ = 25C
Ciss
400
350
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
VGS = 0 V
300
Ciss
250
Crss
200
150
Ciss
100
Coss
10
Crss
100
Coss
50
Crss
0
10
0
VGS
1
5
10
15
20
25
VDS
10
100
1000

Variation
4473
600
QT
500
10
VGS
400
Q1
Q2
300
ID = 1 A
TJ = 25C
200
100
2
Q3
0
VDS
3
0
8
100
VDD = 300 V
ID = 1 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTD1N60E
tf
td(off)
td(on)
10
tr
10


100
1
VGS = 0 V
TJ = 25C
0.8
0.6
0.4
0.2
0
0.5
0.54
0.58
0.62
0.66
0.7
0.74
0.78
0.82
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4474
temperature.
MTD1N60E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C

10
10 s
100 s
0.1
dc
1 ms
10 ms
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
50
ID = 1 A
40
30
20
10
0.001
0.1
10
100
1000
25
50
75
100
125
150

Safe Operating Area


1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t,TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4475
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD1N80E
TMOS POWER FET

1.0 AMPERES
800 VOLTS
RDS(on) = 12 OHM


Fast Recovery Diode
G
DPAK

Rating
Symbol
Value
Unit
VDSS
800
Vdc
VDGR
800
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
1.0
0.8
3.0
Adc

Derate above 25C
PD
48
0.38
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150
Apk

EAS
mJ

Thermal Resistance Junction to Ambient, when mounted to minimum recommended pad size
RJC
RJA
RJA
2.6
100
71.4
C/W
TL
260
20
REV 1
4476
MTD1N80E
Characteristic
Symbol
Min
Typ
Max
Unit
800
981
10
100
100
2.0
3.3
6.3
4.0
mV/C
10.3
12
Ohm
11
14.4
12.6
gFS
0.4
0.985
mhos
Ciss
297
420
pF
Coss
29
40
Crss
6.0
10
td(on)
9.0
20
tr
10
20
td(off)
20
40
tf
27
55
QT
9.6
20
Q1
2.1
Q2
4.2
Q3
4.7
0.82
0.7
1.2
trr
317
ta
56
tb
261
QRR
0.93
4.5
7.5
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 0.250 Adc)
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 1.0 Adc)
(VGS = 10 Vdc, ID = 0.5 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 400 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 400 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4477
MTD1N80E
2.0
TJ = 25C
1.6
2.0
VGS = 10 V
6V
8V
1.2
0.8
5V
0.4
VDS 10 V
1.6
1.2
0.8
TJ = 100C
0.4
25C
4V
0
10
15
0
2.0
20
55C
2.5
18
VGS = 10 V
15
100C
12
TJ = 25C
9
6
55C
3
0
0.25
0.50
0.75
1.0
1.25
1.50
1.75
2.0
16
TJ = 25C
15
14
13
12
VGS = 10 V
11
15 V
10
9
0
0.4
2.5
1.6
2.0
1000
VGS = 10 V
ID = 0.5 A
VGS = 0 V
TJ = 125C
2
100
1.5
0.5
25
0
25
50
75
100
125

Temperature
4478
0.8
1.2

and Gate Voltage

(NORMALIZED)

and Temperature
0
50
6.0

3.0
3.5
4.0
4.5
5.0
5.5
150
100C
10
25C
1
0.1
0
100
200
300
400
500
600
700
800

MTD1N80E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
700
600
500
400
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1000
TJ = 25C
VGS = 0 V
Ciss
300
200
TJ = 25C
VGS = 0
Ciss
100
Coss
10
Crss
Coss
100
0
Crss
0
10
15
20
25
10
100
1000
4479
400
QT
10
300
VGS
8
6
200
Q1
Q2
4
ID = 1 A
100
TJ = 25C
2
0
VDS
Q3
0
4
6
0
10
100
VDD = 400 V
ID = 1 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTD1N80E
tf
td(off)
10
tr
td(on)
1
1
10

100

1.0
VGS = 0 V
TJ = 25C
0.8
0.6
0.4
0.2
0
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4480
temperature.
MTD1N80E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
1
100 s
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
100
20

10
ID = 1 A
15
10
1000
25
50
75
100
125

(NORMALIZED)

Safe Operating Area
150

1
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
0.00001
t1
t2
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4481
MOTOROLA
Product Preview
MTD1P50E
TMOS E-FET.
TMOS POWER FET

1.0 AMPERES
500 VOLTS
15

switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against

Temperature
Avalanche Mode
SourcetoDrain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode

DPAK Surface Mount
S
Symbol
Value
Unit
VDSS
500
Vdc
VDGR
500
Vdc

GatetoSource Voltage Single Pulse (tp 50 s)
VGS
VGSM
20
40
Vdc

ID
ID
IDM
1.0
0.8
4.0
Adc

Derate above 25C
Total Power Dissipation @ TC = 25C, when mounted to minimum recommended pad size
PD
50
0.4
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150
EAS
45
mJ
RJC
RJA
RJA
2.5
100
71.4
C/W
TL
260
Rating
Apk
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS (TJ < 150C)

4482
MTD1P50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
TBD
Vdc
V/C
10
100
100
nAdc
2.0
3.1
TBD
4.0
Vdc
mV/C
12
15
Ohms
18
15.8
gFS
0.4
0.6
mhos
Ciss
TBD
TBD
pF
Coss
TBD
TBD
Crss
TBD
TBD
td(on)
TBD
TBD
tr
TBD
TBD
td(off)
TBD
TBD
tf
TBD
TBD
QT
TBD
TBD
Q1
TBD
Q2
TBD
Q3
TBD
2.0
TBD
3.5
trr
TBD
ta
TBD
tb
TBD
QRR
TBD
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
ON CHARACTERISTICS*
VGS(th)
RDS(on)

(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
SWITCHING CHARACTERISTICS*
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDS = 250 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 1.0 Adc,
dIS/dt = 100 A/s)
VSD
Vdc
ns
* Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
4483
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD2N40E
TMOS POWER FET

2.0 AMPERES
400 VOLTS
RDS(on) = 3.5 OHM

withstand high energy in the avalanche and switch efficiently. This
new high energy device also offers a draintosoure diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, PWM motor controls and
voltage transients.

Replaces MTD1N40E

DPAK
G
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
400
Vdc
VDGR
400
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
2.0
1.5
6.0
Adc

Derate above 25C
Total Power Dissipation @ TC = 25C, when mounted to minimum recommended pad size
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
45
mJ

RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
Apk
4484
MTD2N40E
Characteristic
Symbol
Min
Typ
Max
Unit
400
451
Vdc
mV/C
10
100
100
nAdc
2.0
3.2
7.0
4.0
Vdc
mV/C
3.1
3.5
Ohm
7.3
8.4
7.4
gFS
0.5
1.0
mhos
Ciss
229
320
pF
Coss
34
40
Crss
7.3
10
td(on)
8.0
16
tr
8.4
14
td(off)
12
26
tf
11
20
QT
8.6
12
Q1
2.6
Q2
3.2
Q3
5.0
0.88
0.76
1.2
trr
156
ta
99
tb
57
QRR
0.89

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
(VDS = VGS, ID = 0.25 mA)
VGS(th)
RDS(on)

(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 200 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 320 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4485
MTD2N40E
TJ = 25C
VGS = 10 V
8V
3.2
7V
2.4
6V
1.6
0.8
VDS 10 V
1
TJ = 100C
5V
12
16
20
55C
2
TJ = 25C
55C
100C
5.0
TJ = 25C
4.5
4.0
VGS = 10 V
3.5
15 V
3.0
2.5
0
0.5

and Temperature
1.5
2
2.5
3
3.5

and Gate Voltage
2.5
1000
VGS = 10 V
ID = 1 A
VGS = 0 V
2

(NORMALIZED)
VGS = 10 V

8
25C
1.5
TJ = 125C
100
0.5
0
50
25
0
25
50
75
100
125

Temperature
4486
150
10
0
100
200
300
400

MTD2N40E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
500
VGS = 0 V
Ciss
300
Ciss
Crss
200
Ciss
Coss
10
Crss
Crss
5
TJ = 25C
VGS = 0 V
100
Coss
100
0
10
1000
TJ = 25C
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
400
VDS = 0 V
10
15
20
25
VGS
VDS
1
10
100
1000
4487
400
QT
10
300
VGS
8
6
200
Q2
Q1
4
TJ = 25C
ID = 2 A
2
0
VDS
Q3
0
100
100
t, TIME (ns)
12
MTD2N40E
td(off)
tf
10
tr
TJ = 25C
ID = 2 A
VDD = 200 V
VGS = 10 V
td(on)
10
100



2
VGS = 0 V
TJ = 25C
1.5
0.5
0.5
0.6
0.7
0.8
0.9
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4488

temperature.
MTD2N40E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C

10
10 s
100 s
1 ms
10 ms
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
100
45
ID = 2 A
40
35
30
25
20
15
10
5
0
1000
25
50
75
100
125

Safe Operating Area
150


1
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
0.01
SINGLE PULSE
t1
t2
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4489
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD2N50E

TMOS POWER FET
2.0 AMPERES
500 VOLTS
RDS(on) = 3.6 OHM


Replaces MTD2N50

DPAK
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
2.0
1.5
6.0
Adc

Derate above 25C
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
100
mJ

RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
Apk
REV 1
4490
MTD2N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
562
Vdc
mV/C
0.1
1.0
100
nAdc
2.0
6.0
4.0
Vdc
mV/C
2.7
3.6
Ohm
6.0
8.64
6.48
gFS
1.2
1.6
mhos
Ciss
323
450
pF
Coss
45
63
Crss
9.0
20
td(on)
8.0
20
tr
6.0
20
td(off)
16
30
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 250 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)
tf
10
20
QT
11
15
Q1
2.0
Q2
5.4
Q3
5.1
0.8
0.69
1.6
trr
334
ta
62
ns
nC


(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns
tb
272
QRR
0.99

LD
4.5
nH

LS
7.5
nH


4491
MTD2N50E
4.0
4
VGS = 10 V
VDS 10 V
3.5
6V
TJ = 25C
3
2
5V
1
25C
TJ = 55C
3.0
100C
2.5
2.0
1.5
1.0
0.5
10
12
14
16
18
3.5
4.0
TJ = 100C
5
4
25C
3
55C
2
1
0
0.4
0.8
1.2
1.6 2.0 2.4
2.8
3.2
3.6
4.0
5.5
6.0
6.5
7.0
3.6
4.0
4.2
TJ = 25C
3.8
3.4
VGS = 10 V
3.0
15 V
2.6
0
0.4
0.8
1.2 1.6 2.0 2.4

2.8
3.2

and Gate Voltage
2.0
1000
VGS = 0 V
VGS = 10 V
ID = 1 A
TJ = 125C
1.6
1.2
0.8
4492
5.0
0.4
50
4.5

and Temperature

(NORMALIZED)
3.0
VGS = 10 V
2.5
8
7
0
2.0
20
25
25
50
75
100
125
150
100
100C
25C
10
50
100
150
200
250
300
350
400

Temperature

450
500
MTD2N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
700
1000
Ciss
VGS = 0 V
VGS = 0 V
TJ = 25C
500
400
Ciss
Crss
300
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
600
VDS = 0 V
200
Ciss
100
Coss
10
Crss
Coss
100
Crss
1
10
5
VGS
10
15
20
25
VDS
10
100
1000

Variation
4493
18
450
ID = 2 A
TJ = 25C
16
VDD = 250 V
ID = 2 A
VGS = 10 V
TJ = 25C
400
350
14
12
300
QT
250
10
8
VGS
Q1
200
Q2
150
100
50
2
VDS
Q3
0
100
0
10
t, TIME (ns)
MTD2N50E
td(off)
tf
td(on)
tr
10
10


100
2.0
VGS = 0 V
TJ = 25C
1.6
1.2
0.8
0.4
0
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4494
temperature.
MTD2N50E
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
TC = 25C

10
10 s
1.0
100 s
1 ms
10 ms
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
dc
100
1.0
10
0.1
ID = 2 A
80
60
40
20
0
1000
25

Safe Operating Area
50
75
100
125
150


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4495
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD3N25E

TMOS POWER FET
3 AMPERES
250 VOLTS
RDS(on) = 1.4 OHM
This advanced TMOS EFET is designed to withstand high

energy in the avalanche and commutation modes. The new energy
efficient design also offers a draintosource diode with a fast
recovery time. Designed for low voltage, high speed switching
voltage transients.


DPAK
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
250
Vdc
VDGR
250
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
3.0
2.0
9.0
Adc

Derate above 25C
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
45
mJ

RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
Apk
REV 2
4496
MTD3N25E
Characteristic
Symbol
Min
Typ
Max
Unit
250
367
Vdc
mV/C
10
100
100
nAdc
2.0
6.0
4.0
Vdc
mV/C
1.1
1.4
Ohm
5.04
4.41
gFS
1.0
1.8
mhos
Ciss
307
430
pF
Coss
57
75
Crss
14
25
td(on)
7.0
15
tr
5.0
15
td(off)
15
30
tf
6.0
15
QT
9.8
15
Q1
2.1
Q2
4.2
Q3
3.8
0.9
0.728
1.6
trr
153
ta
64
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 125 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 4.7 ))
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 200 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125C)

(S Fi
(See
Figure 14)
((IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/s)
VSD
Vdc
ns
tb
89
QRR
0.51

LD
4.5
nH

LS
7.5
nH


4497
MTD3N25E
6
6
VGS = 10 V
TJ = 25C
7V
6V
3
2
5V
VDS 10 V
TJ = 55C
5
25C
4
100C
3
2
1
1
4V
0
4.5
5.0
5.5
6.0
6.5
TJ = 100C
2.0
1.6
25C
1.2
0.8
55C
0.5 1.0
1.5
2.0 2.5 3.0 3.5 4.0 4.5

5.0
5.5
6.0
7.0
7.5
1.7
TJ = 25C
1.6
1.5
1.4
1.3
VGS = 10 V
1.2
1.1
15 V
1.0

and Temperature
0.5
1.0 1.5
2.0 2.5 3.0 3.5 4.0 4.5

5.0
5.5 6.0

and Gate Voltage
2.0
100
VGS = 10 V
ID = 1.5 A
1.6
VGS = 0 V
TJ = 125C
100C

(NORMALIZED)
4.0
2.4
1.2
0.8
25
0
25
50
75
100
125

Temperature
4498
3.5
2.8
0.4
50
3.0
VGS = 10 V
2.5
3.2
0.4
0
2.0
10
150
10
25C
1.0
50
100
150
200
250

MTD3N25E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
800
C, CAPACITANCE (pF)
700
VDS = 0
Ciss
VGS = 0
TJ = 25C
600
500
Crss
400
Ciss
300
200
Coss
100
Crss
0
10
0
VGS
10
15
20
25
VDS
4499
240
QT
200
10
VGS
8
Q1
160
Q2
120
TJ = 25C
ID = 3 A
80
40
Q3
VDS
0
0
3
5
6
4
7
0
10
100
VDD = 125 V
ID = 3 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTD3N25E
td(off)
10
tf
tr
td(on)
1
1

Voltage versus Ttotal Charge
10
100


3.0
VGS = 0 V
TJ = 25C
2.5
2.0
1.5
1.0
0.5
0
0.5
0.55
0.6
0.65
0.85
0.7
0.75
0.8
0.9
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4500
temperature.
MTD3N25E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
45
10 s

10
100 s
1.0
1 ms
10 ms
ds
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
100
10
40
ID = 3 A
35
30
25
20
15
10
5
0
1000

Safe Operating Area
25
150
50
75
100
125


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
t1
t2
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E02
t, TIME (s)
1.0E03
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4501
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD4N20E
TMOS POWER FET

4.0 AMPERES
200 VOLTS
RDS(on) = 1.2 OHM

voltage transients.
D
DPAK

G
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
200
Vdc
VDGR
200
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
4.0
2.6
12
Adc

Derate above 25C
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
80
mJ

RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
Rating
Apk
REV 1
4502
MTD4N20E
Characteristic
Symbol
Min
Typ
Max
Unit
200
263
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
0.98
1.2
Ohm
3.5
5.8
5.0
gFS
1.5
2.1
mhos
Ciss
311
430
pF
Coss
66
80
Crss
11
20
td(on)
10
17
tr
4.0
26
td(off)
15
29
tf
6.0
18
QT
9.2
14
Q1
2.4
Q2
4.1
Q3
5.6
0.92
0.82
trr
123
ta
82
tb
41
QRR
0.58

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 0.25 Adc)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 4.0 Adc)
(ID = 2.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 100 Vdc, ID = 4.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 160 Vdc, ID = 4.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4503
MTD4N20E
8
TJ = 25C
VGS = 10 V
7V
5
4
3
6V
2
5V
1
0
10
12
100C
4
3
2
VGS = 10 V
3.5
3.0
2.5
TJ = 100C
2.0
1.5
1.0
25C
0.5
55C
0
0
25C
14
4.5
4.0
TJ = 55C
2.8
TJ = 25C
2.4
2.0
1.6
VGS = 10 V
1.2
15 V
0.8
0.4
0
0

and Temperature

and Gate Voltage
100
2.5
VGS = 0 V
VGS = 10 V
ID = 4 A
TJ = 125C
2.0
100C
I DSS, LEAKAGE (nA)

(NORMALIZED)
9V
VDS 10 V
8V
1.5
1.0
10
25C
0.5
0
50
4504
25
25
50
75
100
125
150
50
100
150
200

Temperature

250
MTD4N20E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
800
VDS = 0 V
C, CAPACITANCE (pF)
600
400
VGS = 0 V
TJ = 25C
Ciss
Crss
Ciss
200
Coss
Crss
0
10
10
15
20
25
VGS
VDS
4505
180
16
160
QT
14
140
12
120
VGS
10
Q1
100
Q2
80
8
6
60
ID = 4 A
TJ = 25C
4
2
0
20
VDS
Q3
4
40
100
t, TIME (ns)
18
MTD4N20E
td(off)
td(on)
10
tf
tr
0
10
VDD = 100 V
ID = 4 A
VGS = 10 V
TJ = 25C
10
100



4.0
VGS = 0 V
TJ = 25C
3.2
2.4
1.6
0.8
0
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4506

temperature.
MTD4N20E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
10
10 s
100 s
1.0
1 ms
10 ms
dc
0.1
80

100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
ID = 4 A
60
40
20
0.01
0.1
1.0
10
100
1000
25
50
75
100
125

Safe Operating Area
150


1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
t1
t2
0.01
1.0E05
1.0E03
1.0E04
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4507
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD5N25E
TMOS POWER FET

5.0 AMPERES
250 VOLTS
RDS(on) = 1.0 OHM

voltage transients.
D
DPAK

G
S

Symbol
Value
Unit
DrainSource Voltage
Rating
VDSS
250
Vdc
VDGR
250
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
5.0
3.2
15
Adc

Derate above 25C
PD
50
0.4
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
84
mJ

Junction to Ambient
RJC
RJA
RJA
2.50
100
71.4
C/W
TL
260
Apk
REV 1
4508
MTD5N25E
Characteristic
Symbol
Min
Typ
Max
Unit
250
326
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
6.0
4.0
Vdc
mV/C
0.81
1.0
Ohm
3.4
6.0
5.3
gFS
1.5
2.6
mhos
Ciss
369
520
pF
Coss
66
90
Crss
14
30
td(on)
10
tr
18
40
td(off)
21
40
tf
18
40
QT
13.2
15
Q1
2.9
Q2
6.2
Q3
5.9
0.93
0.82
1.6
trr
147
ta
100
tb
47
QRR
0.847

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 0.25 Adc)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 5.0 Adc)
(ID = 2.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 125 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 200 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 5.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4509
MTD5N25E
10
VGS = 10 V
9V
TJ = 25C
7V
6
6V
5V
25C
6
100C
4
10
12
14
16
18
3.0
2.5
2.0
TJ = 100C
1.5
25C
1.0
55C
0.5
0
1
6
4
5
7
10
VGS = 10 V
3.5
1.7
TJ = 25C
1.5
1.3
VGS = 10 V
1.1
15 V
0.9
0.7
0

and Temperature
3
6
4
5
7
10

and Gate Voltage
100
2.5
VGS = 0 V
VGS = 10 V
ID = 2.5 A
TJ = 125C
2.0

(NORMALIZED)
TJ = 55C
0
0
VDS 10 V
8V
10
1.5
1.0
100C
10
25C
0.5
0
50
1
25
0
25
50
75
100
125

Temperature
4510
150
50
150
100
200
250

MTD5N25E
Switching behavior is most easily modeled and predicted by
recognizing that the power MOSFET is charge controlled. The
lengths of various switching intervals (t) are determined by
how fast the FET input capacitance can be charged by current
from the generator.
The capacitance (Ciss) is read from the capacitance curve at a

voltage corresponding to the offstate condition when calculating td(on) and is read at a voltage corresponding to the onstate
when calculating td(off).
The published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies greatly
with applied voltage. Accordingly, gate charge data is used. In
most cases, a satisfactory estimate of average input current
(IG(AV)) can be made from a rudimentary analysis of the drive
circuit so that

source lead, inside the package and in the circuit wiring which
is common to both the drain and gate current paths, produces
a voltage at the source which reduces the gate drive current.
The voltage is determined by Ldi/dt, but since di/dt is a function
of drain current, the mathematical solution is complex. The
MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance
which effectively adds to the resistance of the driving source,
but the internal resistance is difficult to measure and,
consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and is
believed readily achievable with board mounted components.
Most power electronic loads are inductive; the data in the
figure is taken with a resistive load, which approximates an
optimally snubbed inductive load. Power MOSFETs may be
safely operated into an inductive load; however, snubbing
reduces switching losses.
t = Q/IG(AV)
During the rise and fall time interval when switching a resistive
load, VGS remains virtually constant at a level known as the
plateau voltage, VSGP. Therefore, rise and fall times may be
approximated by the following:
tf = Q2 x RG/VGSP
where
During the turnon and turnoff delay times, gate current is not
constant. The simplest calculation uses appropriate values
from the capacitance curves in a standard equation for voltage change in an RC network. The equations are:
1000
VDS = 0 V
TJ = 25C
Ciss
800
C, CAPACITANCE (pF)
VGS = 0 V
600
400
Ciss
Crss
200
0
Coss
Crss
10
5
VGS
10
15
20
25
VDS
4511
300
QT
10
250
VGS
200
8
Q1
Q2
150
ID = 5 A
100
TJ = 25C
50
Q3
VDS
0
8
10
6
12
0
14
100
t, TIME (ns)
12
MTD5N25E
VDD = 125 V
ID = 5 A
VGS = 10 V
TJ = 25C
tf
td(off)
tr
10
td(on)
10
100


5
VGS = 0 V
TJ = 25C
4
0
0.5
0.55
0.65 0.7
0.75 0.8
0.85
0.6
0.9
0.95
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
A Power MOSFET designated EFET can be safely used in
switching circuits with unclamped inductive loads. For reliable
4512
operation, the stored energy from circuit inductance

temperature.
current (IDM), the energy rating is specified at rated continuous
current (ID), in accordance with industry custom. The energy
rating must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at
MTD5N25E
SAFE OPERATING AREA
120
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
10 s
100 s
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
dc
1.0
100
10
ID = 5 A
80
60
40
20
0
1000

Safe Operating Area
25
150
50
75
100
125


1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0
10
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4513
MOTOROLA
Data Sheet
V.
Designer's
TMOS
MTD5P06V

TMOS POWER FET

5 AMPERES
60 VOLTS
RDS(on) = 0.450 OHM

TM


DPAK Surface Mount

Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel,

Rating
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
15
25
Vdc
Vpk
5
4
18
Adc
40
0 27
0.27
2.1
Watts
W/C
Watts
ID
ID
IDM
PD

Derate above 25C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 5 Apk, L = 10 mH, RG = 25 )
Apk
TJ, Tstg
EAS
55 to 175
125
mJ
RJC
RJA
RJA
3.75
100
71.4
C/W
TL
260
REV 1
4514
MTD5P06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
61.2
10
100
100
2.0
2.8
4.7
4.0
mV/C
0.34
0.45
Ohm
2.7
2.6
1.5
3.6
Ciss
367
510
Coss
140
200
Crss
29
60
td(on)
11
20
tr
26
50
td(off)
17
30
tf
19
40
QT
12
20
Q1
3.0
Q2
5.0
Q3
5.0
1.72
1.34
3.5
trr
97
ta
73
tb
24
QRR
0.42
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 2.5 Adc, TJ = 150C)
VDS(on)
(VDS = 15 Vdc, ID = 2.5 Adc)
Vdc
Vdc
gFS
Mhos
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 5 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 5 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4515
MTD5P06V
VGS = 10V
8
10
8V
9V
7V
TJ = 25C
6V
4
5V
2
6
5
4
3
2
VGS = 10 V
TJ = 100C
0.45
0.4
25C
0.35
0.3
0.4
TJ = 25C
VGS = 10 V
0.35
0.5
15 V
0.3
0.25
55C
0.25
0.2
1
4
5
6
7
10
0.2

and Temperature
4
5
7
6
10
100
1.8
1.6

and Gate Voltage
VGS = 0 V
VGS = 10 V
ID = 2.5 A
1.4

(NORMALIZED)
0.6
0.55
100C
25C
TJ = 55C
4V
0
VDS 10 V
9
10
1.2
1
0.8
0.6
TJ = 125C
10
0.4
0.2
50
25
0
25
50
75
100
125
150

Temperature
4516
175
50
10
20
30
40
60

MTD5P06V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1000
VDS = 0 V
Ciss
900
TJ = 25C
C, CAPACITANCE (pF)
800
700
600
Crss
500
Ciss
400
300
Coss
200
100
0
Crss
VGS = 0 V
10
5
VGS
10
15
20
25
VDS
4517
60
VGS
54
QT
48
8
7
Q2
Q1
42
36
30
24
18
3
2
Q3
VDS
1
0
TJ = 25C
ID = 5 A
12
10
12
6
0
14
100
TJ = 25C
ID = 5 A
VDD = 30 V
VGS = 10 V
t, TIME (ns)
10
MTD5P06V
tr
td(off)
tf
10
td(on)
1
1
10


100

5
TJ = 25C
VGS = 0 V
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4518
MTD5P06V
SAFE OPERATING AREA
140
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10
100 s
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
dc
1
10
ID = 5 A
120
100
80
60
40
20
0
100
25
50
75
100
125
150
175

Safe Operating Area

1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4519
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD6N10E
TMOS POWER FET

6.0 AMPERES
100 VOLTS
RDS(on) = 0.400 OHM

voltage transients.

Fast Recovery Diode
Replaces MTD5N10

DPAK
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
VDGR
100
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
6.0
4.5
18
Adc

Derate above 25C
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

(VDD = 25 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 3.0 mH, RG =25 )
EAS
50
mJ

RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
Rating
Apk
REV 1
4520
MTD6N10E
Characteristic
Symbol
Min
Typ
Max
Unit
100
124
Vdc
mV/C
10
100
100
nAdc
2.0
3.2
4.0
4.0
Vdc
mV/C
0.29
0.4
Ohm
1.75
2.9
2.5
gFS
1.5
2.4
mhos
Ciss
310
420
pF
Coss
120
210
Crss
25
50
td(on)
8.0
15
tr
31
49
td(off)
13
31
tf
12
27
QT
10
14
Q1
3.3
Q2
4.3
Q3
5.5
0.98
0.9
2.0
trr
86.7
ta
64
tb
22.7
QRR
0.327

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 50 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 80 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4521
MTD6N10E
12
12
VGS = 10 V
TJ = 25C
10
VDS 10 V
9V
8V
8
6
7V
4
6V
TJ = 55C
10
25C
100C
6
4
2
2
5V
0
2
4
6
3
5
7
0.65
VGS = 10 V
0.55
TJ = 100C
0.45
0.35
25C
0.25
0.15
55C
4
8
6
10
12
14
0.45
TJ = 25C
0.40
VGS = 10 V
0.35
0.30
15 V
0.25
0.20
8
12
6
10
16
14

and Gate Voltage
1.8
100
VGS = 0 V
VGS = 10 V
ID = 3 A
TJ = 125C
100C

(NORMALIZED)

and Temperature
1.6
10

4
6
8
5
7
9
1.4
1.2
1.0
10
25C
0.8
0.6
50
25
0
25
50
75
100
125

Temperature
4522
150
40
80
20
60
100
120

MTD6N10E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
800
C, CAPACITANCE (pF)
VDS = 0 V
600
VGS = 0 V
TJ = 25C
Ciss
400
Ciss
Crss
200
Coss
Crss
0
10
5
VGS
10
15
20
25
VDS
4523
120
QT
10
100
VGS
Q1
Q2
80
60
40
ID = 6 A
TJ = 25C
20
Q3
VDS
4
10
1000
VDD = 50 V
ID = 6 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTD6N10E
100
tr
td(off)
tf
td(on)
10
10


100

6
VGS = 0 V
TJ = 25C
4
3
2
1
0
0.50 0.55 0.60 0.65
0.70 0.75 0.80 0.85 0.90 0.95
1.0
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4524
temperature.
MTD6N10E
SAFE OPERATING AREA
50
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10
100 s
1 ms
1.0
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
40
35
30
25
20
15
10
5
0.1
0.1
10
1.0
ID = 6 A
45
0
25
100
50
75
100
150
125

Safe Operating Area


1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4525
MOTOROLA
Designer's
Data Sheet
MTD6N15

TMOS POWER FET

6.0 AMPERES
150 VOLTS
RDS(on) = 0.3 OHM
This TMOS Power FET is designed for high speed, low loss
power switching applications such as switching regulators, converters, solenoid and relay drivers.

Low RDS(on) 0.3 Max
Rugged SOA is Power Dissipation Limited
SourcetoDrain Diode Characterized for Use With
Inductive Loads
Low Drive Requirement VGS(th) = 4.0 V Max
Surface Mount Package on 16 mm Tape

DPAK (TO252)
G
S
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
150
Vdc
VDGR
150
Vdc

GateSource Voltage NonRepetitive (tp 50 s)
VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
6.0
20
Adc

Derate above 25C
PD
20
0.16
Watts
W/C

Derate above 25C
PD
1.25
0.01
Watts
W/C

Derate above 25C
PD
1.75
0.014
Watts
W/C
TJ, Tstg
65 to +150
RJC
RJA
RJA
6.25
100
71.4
C/W

Characteristic
Symbol
Min
Max
Unit
V(BR)DSS
150
Vdc
10
100
OFF CHARACTERISTICS
(VDS = Rated VDSS, VGS = 0 Vdc)
TJ = 125C
Adc
IDSS
(1) These ratings are applicable when surface mounted on the minimum pad size recommended.
(continued)
4526
MTD6N15
Characteristic
Symbol
Min
Max
Unit
GateBody Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
100
nAdc
GateBody Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
100
nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc)

TJ = 100C
VGS(th)
2.0
1.5
4.5
4.0
Vdc
RDS(on)
0.3
Ohm

(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 100C)
VDS(on)
1.8
1.5
gFS
2.5
mhos
Ciss
1200
pF
Coss
500
Crss
120
td(on)
50
tr
180
td(off)
200
tf
100
OFF CHARACTERISTICS continued
ON CHARACTERISTICS*
Vdc
Input Capacitance

f = 1.0 MHz)
S Fi
See
Figure 11
Output Capacitance
SWITCHING CHARACTERISTICS* (TJ = 100C)

TurnOn Delay Time
(VDD = 25 Vdc, ID = 3.0 Adc,
RG = 50 )
See Figures 13 and 14
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
(VDS = 0.8 Rated VDSS,

ID = Rated ID, VGS = 10 Vdc)
S Figure
See
Fi
12
GateSource Charge
GateDrain Charge
Qg
15 (Typ)
30
Qgs
8.0 (Typ)
Qgd
7.0 (Typ)
VSD
1.3 (Typ)
2.0
ns
nC
SOURCEDRAIN DIODE CHARACTERISTICS*

Forward OnVoltage
(IS = 6.0
6 0 Adc,
Ad di/dt = 25 A/s
A/
VGS = 0 Vdc,)
Forward TurnOn Time
ton
Vdc
trr
325 (Typ)
ns
TA TC
2.5 25
20
1.5
15
10
0.5
TC
25
50
75
100
125
150
T, TEMPERATURE (C)
Figure 1. Power Derating
4527
MTD6N15
10 V
VGS(th) , GATE THRESHOLD VOLTAGE (VOLTS)
24
9V
20
TJ = 25C
16
8V
12
8
7V
6V
5V
10
20
30
40
50
60
3.6
2.8
2.4
50
TJ = 25C
VDS = 10 V
12
10
8
6
4
100C
55C
2
0
4
6
8
10
1.6
0.25
0.20
TJ = 100C
25C
0.15
55C
0.10
0.05
0
8
12
16
20
4528
VGS = 0 V
ID = 0.25 mA
1.2
0.8
0.4
0
50
50
100
150
200
Figure 5. Breakdown Voltage Variation

With Temperature

(NORMALIZED)
VGS = 10 V
150
0.30
0
50
100

With Temperature
V(BR)DSS , DRAINTOSOURCE BREAKDOWN VOLTAGE
(NORMALIZED)
14
VDS = VGS
ID = 1 mA
3.2
1.6
VGS = 10 V
ID = 3 A
1.2
0.8
0.4
0
50
50
100
150
200

With Temperature
MTD6N15
SAFE OPERATING AREA
20
100 s
10 s
10
20
1 ms
5
2
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.5
0.2
0.1
dc
15
TJ 150C
10
TC = 25C
VGS = 20 V SINGLE PULSE
0.05
0.03
0.3 0.5 0.7 1
2 3 5 7 10
20 30 50 70 100
200 300
20

Safe Operating Area
40
60
80
100
120
140
160
Figure 9. Maximum Rated Switching

Safe Operating Area

Note, AN569, Transient Thermal ResistanceGeneral Data
and Its Use provides detailed instructions.
The switching safe operating area (SOA) of Figure 9 is the

boundary that the load line may traverse without incurring
damage to the MOSFET. The fundamental limits are the
peak current, IDM and the breakdown voltage, V(BR)DSS. The
switching SOA shown in Figure 8 is applicable for both turn
on and turnoff of the devices for switching times less than
one microsecond.
The power averaged over a complete switching cycle must
be less than:
r(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)
0.7
0.5
D = 0.5
0.3
0.2
TJ(max) TC
RJC
0.2
0.1
P(pk)
0.1 0.05
0.07
0.02
0.05
0.03
0.02
0.01
0.01
t1
0.01
t2
SINGLE PULSE
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
10
t, TIME OR PULSE WIDTH (ms)
20
RJC(t) = r(t) RJC

RJC(t) = 6.25C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
50
100
200
500
1000
4529
MTD6N15
2000
TJ = 25C
VGS = 0
C, CAPACITANCE (pF)
1600
1200
800
400
0
15
Ciss
VDS = 0
Coss
Crss
25
30
10
5
5
10
20
35
0
15
VGS
VDS
VGS, GATE SOURCE VOLTAGE (VOLTS)
16
TJ = 25C
ID = 6 A
12
75 V
120 V
VDS = 50 V
8
12
16
20

RESISTIVE SWITCHING
VDD
ton
td(on)
RL
Vout
Vin
PULSE GENERATOR
Rgen
50
tr
90%
td(off)
tf
90%
OUTPUT, Vout
INVERTED
DUT
z = 50
toff
10%
90%
50
INPUT, Vin
50%
50%
10%
PULSE WIDTH
4530
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD6N20E
TMOS POWER FET

6.0 AMPERES
200 VOLTS
RDS(on) = 0.7 OHM

voltage transients.

DPAK
G
S

Rating
Symbol
Value
Unit
VDSS
200
Vdc
VDGR
200
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
6.0
3.8
18
Adc

Derate above 25C
PD
50
0.4
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
54
mJ

Junction to Ambient
RJC
RJA
RJA
2.50
100
71.4
C/W
TL
260
Apk
4531
MTD6N20E
Characteristic
Symbol
Min
Typ
Max
Unit
200
689
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.1
4.0
Vdc
mV/C
0.46
0.700
Ohm
2.9
5.0
4.4
gFS
1.5
mhos
Ciss
342
480
pF
Coss
92
130
Crss
27
55
td(on)
8.8
17.6
tr
29
58
td(off)
22
44
tf
20
40.8
QT
13.7
21
Q1
2.7
Q2
7.1
Q3
5.9
0.99
0.9
1.2
trr
138
ta
93
tb
45
QRR
0.74

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 0.25 Adc)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 100 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 160 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4532
MTD6N20E
7V
6
4
6V
5V
2
100C
6
4
1.2
VGS = 10 V
1.0
TJ = 100C
0.8
0.6
25C
0.4
55C
0.2
0
25C
10
12
TJ = 55C
10
0.70
TJ = 25C
0.65
0.60
0.55
VGS = 10 V
0.50
0.45
15 V
0.40
0
10
12

and Temperature

and Gate Voltage
100
2.5
2.0
VGS = 10 V
ID = 3 A
VGS = 0 V
8V
VDS 10 V
9V
10

(NORMALIZED)
12
VGS = 10 V
TJ = 25C
12
1.5
1.0
TJ = 125C
100C
10
25C
0.5
0
50
25
25
50
75
100
125
150
50
100
150

Temperature

200
4533
MTD6N20E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
900
VDS = 0 V
TJ = 25C
Ciss
750
C, CAPACITANCE (pF)
VGS = 0 V
600
450
Ciss
Crss
300
Coss
150
Crss
0
10
0
VGS
10
15
20
25
VDS
4534
90
QT
10
75
VGS
Q1
Q2
60
45
30
ID = 6 A
TJ = 25C
2
VDS
Q3
0
0
6
8
10
12
15
0
14
1000
t, TIME (ns)
12
MTD6N20E
VDD = 100 V
ID = 6 A
VGS = 10 V
TJ = 25C
100
tr
td(off)
10
tf
td(on)

10
100

6
VGS = 0 V
TJ = 25C
5
4
3
2
1
0
0.5
0.6
0.7
0.8
0.9
1.0
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).

temperature.
4535
MTD6N20E
SAFE OPERATING AREA
60
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10 s
10
100 s
1.0
1 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
10 ms
dc
100
1.0
10
ID = 6 A
50
40
30
20
10
0
1000

Safe Operating Area
25
50
75
100
125
150


1
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E05
t1
t2
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4536
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD6P10E
TMOS POWER FET

6.0 AMPERES
100 VOLTS
RDS(on) = 0.66 OHM

voltage transients.

DPAK
G
S

Rating
Symbol
Value
Unit
VDSS
100
Vdc
VDGR
100
Vdc

VGS
VGSM
15
20
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
6.0
3.9
18
Adc

Derate above 25C
PD
50
0.4
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
180
mJ

Junction to Ambient
RJC
RJA
RJA
2.50
100
71.4
C/W
TL
260
Apk
4537
MTD6P10E
Characteristic
Symbol
Min
Typ
Max
Unit
100
124
Vdc
mV/C
10
100
100
nAdc
2.0
2.9
4.0
4.0
Vdc
mV/C
0.56
0.66
Ohm
3.6
4.8
4.2
gFS
1.5
3.0
mhos
Ciss
550
840
pF
Coss
154
240
Crss
27
56
td(on)
12
25
tr
29
60
td(off)
18
40
tf
20
QT
15.3
22
Q1
4.1
Q2
7.1
Q3
6.8
1.8
1.5
5.0
trr
112
ta
92
tb
20
QRR
0.603

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 0.250 Adc)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 50 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 80 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4538
MTD6P10E
12
9V
10
8
8V
6
7V
TJ = 55C
25C
100C
8
6
4
6V
VDS 10 V
10
12
VGS = 10 V
TJ = 25C
5V
2
10
12
14
16
18
VGS = 10 V
1.1
1.0
TJ = 100C
0.9
0.8
0.7
25C
0.6
0.5
55C
0.4
0.3
1.3
1.2
20
10
12
TJ = 25C
0.9
0.8
0.7
VGS = 10 V
0.6
15 V
0.5
0.4
10
12

and Temperature

and Gate Voltage
100
1.8
1.6
10
1.0
VGS = 10 V
ID = 3 A
VGS = 0 V
1.4

(NORMALIZED)
1.2
1.0
0.8
TJ = 125C
0.6
0.4
50
25
25
50
75
100
125
150
10
120
100
80
60
40
20

Temperature

4539
MTD6P10E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1600
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
1400
TJ = 25C
Ciss
1200
1000
800
Crss
600
Ciss
400
Coss
200
0
Crss
10
0
VGS
10
15
20
25
VDS
4540
90
QT
10
Q1
75
VGS
Q2
60
45
30
ID = 6 A
TJ = 25C
15
VDS
Q3
0
0
6
8
10
12
14
0
16
1000
t, TIME (ns)
12
MTD6P10E
VDD = 50 V
ID = 6 A
VGS = 10 V
TJ = 25C
100
tr
td(off)
td(on)
tf
10

10
100

6
VGS = 0 V
TJ = 25C
5
4
3
2
1
0
0.50
0.75
1.0
1.25
1.50
1.75
2.0
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).

temperature.
4541
MTD6P10E
SAFE OPERATING AREA
200
VGS = 10 V
SINGLE PULSE
TC = 25C

100
10
100 s
1 ms
10 ms
1.0
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1.0
10
ID = 6 A
160
120
80
40
100

Safe Operating Area
25
50
75
100
125
150


1
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
0.01
SINGLE PULSE
t1
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4542
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD9N10E

TMOS POWER FET
9.0 AMPERES
100 VOLTS
RDS(on) = 0.25 OHM

voltage transients.
Replaces MTD6N10

DPAK
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
VDGR
100
Vdc

VGS
VGSM
20
30
Vdc
Vpk

ID
ID
IDM
9.0
5.0
27
Adc

Derate above 25C
PD
40
0.32
1.75
Watts
W/C
Watts
Apk
TJ, Tstg
55 to 150

EAS
40
mJ

RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
REV 2
4543
MTD9N10E
Characteristic
Symbol
Min
Typ
Max
Unit
100
103
Vdc
mV/C
10
100
100
nAdc
2.0
6.0
4.0
Vdc
mV/C
0.17
0.25
Ohm
2.43
2.40
gFS
4.0
mhos
Ciss
610
1200
pF
Coss
176
400
Crss
14
30
td(on)
8.8
20
tr
28
60
td(off)
16
30
tf
4.8
10
QT
14
21
Q1
5.2
Q2
3.2
Q3
6.6
0.98
0.9
1.8
trr
91
ta
71
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 9.0 Adc)
(ID = 4.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 50 Vdc, ID = 9.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 ))
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 80 Vdc, ID = 9.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 9.0 Adc, VGS = 0 Vdc, TJ = 125C)

(S Fi
(See
Figure 14)
((IS = 9.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/s)
VSD
Vdc
ns
tb
20
QRR
0.4

LD
4.5
nH

LS
7.5
nH


4544
MTD9N10E
18
18
14
8V
7V
12
10
8
6V
6
4
5V
2
0
25C
12
100C
10
8
6
4
VGS = 10 V
0.35
TJ = 100C
0.30
0.25
25C
0.20
0.15
55C
0.10
0
14
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
10
0.45
0.40
6
8
12
10
14
16
18
0.25
TJ = 25C
0.23
0.21
0.19
VGS = 10 V
0.17
15 V
0.15
0
8
10
6
12
14
16
18

and Gate Voltage
1.9
100
VGS = 0 V
VGS = 10 V
ID = 4.5 A
1.5

(NORMALIZED)

and Temperature
1.7
TJ = 55C
4V
VDS 10 V
16
16
TJ = 25C
VGS = 10 V
1.3
1.1
0.9
TJ = 125C
10
100C
1.0
25C
0.7
0.5
50
25
0
25
50
75
100
125
150

Temperature
0.1
30
80
90
40
60
50
70
100

4545
MTD9N10E

greatly with applied voltage. Accordingly, gate charge data
is used. In most cases, a satisfactory estimate of average
input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that
switching losses.
t = Q/IG(AV)
the plateau voltage, VSGP. Therefore, rise and fall times
may be approximated by the following:
tf = Q2 x RG/VGSP
where
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation
for voltage change in an RC network. The equations are:
1200
C, CAPACITANCE (pF)
1000
VDS = 0
VGS = 0
TJ = 25C
Ciss
800
Ciss
600
Crss
400
Coss
200
Crss
0
10
0
VGS
10
15
20
25
VDS
4546
120
QT
100
10
VGS
Q2
80
Q1
60
6
4
ID = 9 A
TJ = 25C
40
20
Q3
VDS
0
14
0
0
12
4
6
8
10
100
VDD = 50 V
ID = 9 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTD9N10E
tr
td(off)
10
td(on)
tf
1
1
10

100


9
VGS = 0 V
TJ = 25C
8
7
6
5
4
3
2
1
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
1.0
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
temperature.
4547
MTD9N10E
SAFE OPERATING AREA
10
40
VGS = 20 V
SINGLE
PULSE
TC = 25C

100
10 s
100 s
1 ms
1.0
10 ms
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
1.0
ID = 9 A
32
24
16
0
25
100

Safe Operating Area
50
75
100
125
150


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4548
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTD10N10EL
TMOS POWER FET

10 AMPERES
100 VOLTS
RDS(on) = 0.22 OHM

voltage transients.
Fast Recovery Diode
G
DPAK Surface Mount

Symbol
Value
Unit
VDSS
100
Vdc
VDGR
100
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
10
6.0
35
Adc

Derate above 25C
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150
Rating
Apk

(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 10 Apk, L = 1.0 mH, RG =25 )
EAS

RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
mJ
50
4549
MTD10N10EL
Characteristic
Symbol
Min
Typ
Max
Unit
100
115
10
100
100
1.0
1.45
4.0
2.0
mV/C
0.17
0.22
Ohm
1.85
2.6
2.3
gFS
2.5
7.9
mhos
Ciss
741
1040
pF
Coss
175
250
Crss
18.9
40
td(on)
11
20
tr
74
150
td(off)
17
30
tf
38
80
QT
9.3
15
Q1
2.56
Q2
4.4
Q3
4.66
0.98
0.898
1.6
trr
124.7
ta
86
tb
38.7
QRR
0.539
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 5.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5
5.0
0 Vdc,
Vdc
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 80 Vdc, ID = 10 Adc,
VGS = 5.0 Vdc)
ns
nC


(IS = 10 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4550
MTD10N10EL
20
7V
VGS = 10 V
TJ = 25C
VDS 5 V
5V
20
4.5 V
15
4V
10
3.5 V
5
3V
55C
15
25C
TJ = 100C
10
2V
0
0.35
VGS = 10 V
100C
0.25
TJ = 25C
0.15
55C
0.05
10
15
20
0.25
TJ = 25C
VGS = 5 V
0.2
10 V
0.15
0.1
5

and Temperature
10
15
20

and Gate Voltage
100
VGS = 5 V
ID = 5 A
VGS = 0 V
TJ = 125C
1.5

(NORMALIZED)

2
3
4
0.5
0
50
25
0
25
50
75
100
125
150

Temperature
10
100C
1
0
80
20
40
60
100

4551
MTD10N10EL

voltage corresponding to the offstate condition when calculating td(on) and is read at a voltage corresponding to the on
state when calculating td(off).
The published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used.
In most cases, a satisfactory estimate of average input current
circuit so that
switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
from the capacitance curves in a standard equation for voltage
change in an RC network. The equations are:
1800
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
1600 C
iss
1400
1200
1000
800
Crss
Ciss
600
400
Coss
200
0
10
Crss
5
5
0
10
15
20
25
VGS
VDS
4552
QT
75
VGS
60
45
Q2
Q1
VDS
Q3
0
30
TJ = 25C
ID = 10 A
15
0
10
1000
TJ = 25C
ID = 10 A
VDS = 100 V
VGS = 5 V
100
t, TIME (ns)
90
12
VDS , DRAINTOSOURCE VOLTAGE (VOLTS
MTD10N10EL
tr
tf
td(off)
td(on)
10
10
100


10
VGS = 0 V
TJ = 25C
0
0.5
0.6
0.7
0.8
0.9
1.0
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
temperature.
4553
MTD10N10EL
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
10
100 s
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
10
50

100
ID = 10 A
40
30
20
10
100
25

Safe Operating Area
50
75
100
125
150

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
SINGLE PULSE
0.01
0.00001
t2
0.0001
0.001
0.01
t, TIME (ms)
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0
10
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4554
MOTOROLA
Data Sheet
TMOS E-FET.
DPAK for Surface Mount or
Insertion Mount
Designer's
MTD12N06EZL
TMOS POWER FET

12 AMPERES
60 VOLTS
RDS(on) = 0.180 OHM

This advanced TMOS power FET is designed to withstand high
energy in the avalanche and mode and switch efficiently. This new
high energy device also offers a gatetosource zener diode
designed for 4 kV ESD protection (human body model).
ESD Protected
4 kV Human Body Model
400 V Machine Model
Avalanche Energy Capability
Internal SourceToDrain Diode Designed to Replace External
Avalanche Mode

Rating

DPAK Surface Mount
S
Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
12
7.1
36
Adc

Derate above 25C
PD
45
0.36
1.75
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
72
mJ
RJC
RJA
RJA
2.78
100
71.4
C/W
TL
260
DrainSource Voltage

Apk
4555
MTD12N06EZL
Characteristic
Symbol
Min
Typ
Max
Unit
60
0.06
Vdc
mV/C
10
100
18
Vdc
500
100
nAdc
Adc
1.0
1.5
4.0
2.0
Vdc
mV/C
0.18
Ohm
2.6
2.3
gFS
3.0
6.8
mhos
Ciss
430
600
pF
Coss
224
310
Crss
51
100
td(on)
70
90
tr
436
540
td(off)
158
380
tf
186
340
QT
10.6
40
Q1
1.4
Q2
5.9
Q3
6.0
1.1
1.05
1.4
trr
325
ta
124
tb
201
QRR
2.013

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

Adc
IDSS
GateSource Breakdown Voltage

(VDS = 0 V, IG = 10 mA)
(VGS = 10 Vdc, VDS = 0 V, TJ = 25C)
(VGS = 10 Vdc, VDS = 0 V, TJ = 150C)
IGSS
VGS(th)
Static DrainSource OnResistance (VGS = 5.0 Vdc, ID = 6.0 Adc)
RDS(on)

(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5
5.0
0 Vdc,
Vdc
RG = 9.1 )
Fall Time
Gate Charge
res 8 & 9)
(See Fig
Figures
((VDS = 48 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc)
ns
nC


(IS = 12 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

4556
MTD12N06EZL
24
VGS = 10 V
TJ = 25C
5V
8V
6V
18
12
4V
6
0
1
0.5
TJ = 55C
25C
12
100C
6
2.5
2.5
3.5
4.5
5.5
VGS = 5 V
0.13
TJ = 100C
0.11
25C
0.09
0.07
55C
0.05
0
12
18
24
0.15
1.5
0.096
TJ = 25C
VGS = 10 V
0.088
0.084
0.08
15 V
12
18
24

and Temperature

and Gate Voltage
100
1.8
1.6
1.4
0.092
VGS = 0 V
VGS = 5 V
ID = 12 A
18
0
0

(NORMALIZED)
VDS 10 V
7V
24
1.2
1
0.8
0.6
TJ = 125C
10
100C
0.4
25C
0.2
0
50
25
25
50
75
100
125
150
10
20
30
40
50

Temperature

60
4557
MTD12N06EZL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1200
VDS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
1000
800
600
Ciss
400
Coss
200
Crss
0
0
10
15
20
25
4558
60
QT
50
VGS
4
Q2
Q1
40
30
ID = 12 A
TJ = 25C
20
10
1
VDS
Q3
0
0
4
6
0
10
1000
VDD = 30 V
ID = 12 A
VGS = 5 V
TJ = 25C
t, TIME (ns)
MTD12N06EZL
tr
tf
td(off)
100
td(on)
10
1

10
100


12
VGS = 0 V
TJ = 25C
10
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1.2
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4559
MTD12N06EZL
SAFE OPERATING AREA
75
VGS = 20 V
SINGLE PULSE
TC = 25C
1 ms
10 ms
dc
100 s
10 s

100
10
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
ID = 12 A
60
45
30
15
0
10
1
0.1
25
100

Safe Operating Area
50
75
100
125
150

1
D = 0.5
0.2
0.1
P(pk)
0.05
0.1
0.02
0.01
t1
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4560
MOTOROLA
Designer's
Data Sheet
MTD15N06V
TMOS V
TMOS POWER FET

15 AMPERES
60 VOLTS
RDS(on) = 0.12 OHM


TM

DPAK Surface Mount
S

Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
Rating
Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

GateSource Voltage Single Pulse (tp 50 ms)
VGS
VGSM
20
25
Vdc
Vpk

ID
ID
IDM
15
8.7
45
Adc

Derate above 25C
PD
55
0.36
2.1
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
113
mJ
RJC
RJA
RJA
2.73
100
71.4
C/W
TL
260
DrainSource Voltage

Apk
REV 2
4561
MTD15N06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
67
Vdc
mV/C
10
100
100
nAdc
2.0
2.7
5.0
4.0
Vdc
mV/C
0.08
0.12
Ohm
2.0
2.2
1.9
gFS
4.0
6.2
mhos
Ciss
469
660
pF
Coss
148
200
Crss
35
60
td(on)
7.6
20
tr
51
100
td(off)
18
40
tf
33
70
QT
14.4
20
Q1
2.8
Q2
6.4
Q3
6.1
1.05
1.5
1.6
trr
59.3
ta
46
tb
13.3
QRR
0.165

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 15 Adc)
(ID = 7.5 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 15 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 15 Adc, VGS = 0 Vdc, TJ = 150C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

4562
MTD15N06V
25
30
8V
VGS = 10 V
9V
TJ = 25C
7V
20
15
6V
10
5V
25C
TJ = 55C
20
15
10
10
VGS = 10 V
0.15
TJ = 100C
0.10
25C
55C
0.05
25
10
15
20
30
0.13
TJ = 25C
0.11
VGS = 10 V
0.09
15 V
0.07
0.05
10
15
20
25
30

and Temperature

and Gate Voltage
100
VGS = 0 V
VGS = 10 V
ID = 7.5 A
1.6

(NORMALIZED)
0.20
25
5
0
100C
VDS 10 V
30
1.2
0.8
0.4
50
TJ = 125C
10
30
10
20
40
50

Temperature

25
25
50
75
100
125
150
175
60
4563
MTD15N06V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1500
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
1200
Ciss
900
600
Ciss
Crss
300
Coss
Crss
0
10
0
VGS
10
15
20
25
VDS
4564
QT
10
50
VGS
8
Q2
Q1
40
30
20
ID = 15 A
TJ = 25C
2
0
Q3
3
VDS
6
12
10
0
15
1000
VDD = 30 V
ID = 15 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
60
12
MTD15N06V
100
tr
tf
td(off)
10
td(on)
1
1
10


100

15
VGS = 0 V
TJ = 25C
12
0
0.5
0.7
0.9
1.1
1.3
1.5
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4565
MTD15N06V
SAFE OPERATING AREA
120
VGS = 10 V
SINGLE PULSE
TC = 25C

100
10 s
10
100 s
1 ms
10 ms
1.0
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
ID = 15 A
100
80
60
40
20
0
0.1
1.0
100
10
25

Safe Operating Area
50
75
100
125
150
175

1.0
D = 0.5
0.2
0.1
P(pk)
0.1 0.05
0.02
t1
0.01
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4566
MOTOROLA
Product Preview
MTD15N06VL
TMOS V
TMOS POWER FET

15 AMPERES
60 VOLTS
RDS(on) = 0.085 OHM

TM

DPAK Surface Mount
S

Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
15
25
Vdc
Vpk

ID
ID
IDM
15
12
53
Adc

Derate above 25C
Total Power Dissipation @ 25C(1)
PD
60
0.4
2.1
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
113
mJ
RJC
RJA
RJA
2.5
100
71.4
C/W
TL
260
Rating

Apk
4567
MTD15N06VL
Characteristic
Symbol
Min
Typ
Max
Unit
60
TBD
10
100
100
1.0
1.5
TBD
2.0
mV/C
0.075
0.085
Ohm
1.5
1.3
gFS
8.0
10
mhos
Ciss
630
880
pF
Coss
270
380
Crss
56
110
td(on)
26
50
tr
105
210
td(off)
80
160
tf
70
140
QT
12
20
Q1
3.0
Q2
8.0
Q3
10
1.0
0.9
1.6
trr
100
ta
55
tb
45
QRR
0.345
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 5.0 Vdc, ID = 15 Adc)
(VGS = 5.0 Vdc, ID = 7.5 Adc, TJ = 150C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5
5.0
0 Vdc,
Vdc
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc)
ns
nC


(IS = 15 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4568
MOTOROLA
Data Sheet
HDTMOS E-FET.
Designer's
MTD20N03HDL
TMOS POWER FET

LOGIC LEVEL
20 AMPERES
30 VOLTS
RDS(on) = 0.035 OHM

This advanced HDTMOS power FET is designed to withstand
voltage transients.
SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

DPAK
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
30
Vdc
VDGR
30
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
20
16
60
Adc

Derate above 25C
PD
74
0.6
1.75
Watts
W/C
TJ, Tstg
55 to 150

EAS
200
mJ

RJC
RJA
RJA
1.67
100
71.4
C/W
TL
260
Apk
REV 1
4569
MTD20N03HDL
Characteristic
Symbol
Min
Typ
Max
30
43
10
100
100
1.0
1.5
5.0
2.0
0.034
0.030
0.040
0.035
0.55
0.8
0.7
10
13
Ciss
880
1260
Coss
300
420
Crss
80
112
td(on)
13
15.8
tr
212
238
td(off)
37
30
tf
84
96
QT
13.4
18.9
Q1
3.0
Q2
7.3
Q3
6.0
0.95
0.87
1.1
trr
33
ta
23
tb
10
QRR
33
4.5
7.5
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS

IDSS

IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 2.0) (3)

(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
(Cpk 2.0) (3)

(ID = 20 Adc)
(ID = 10 Adc, TJ = 125C)
VGS(th)
Vdc
RDS(on)
Ohm
VDS(on)
(VDS = 5.0 Vdc, ID = 10 Adc)
mV/C
Vdc
gFS
mhos
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
pF

TurnOn Delay Time
VGS = 5.0
5 0 Vdc,
Vdc
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 24 Vdc, ID = 20 Adc,

VGS = 5.0 Vdc)
ns
nC

Forward OnVoltage
(Cpk 2.0) (3)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125C)

(S Figure
(See
Fi
15)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

(3) Reflects typical values. Cpk = Absolute Value of Spec (SpecAVG/3.516 A).
4570
MTD20N03HDL
40
40
VGS = 10 V
8V
30
VDS 10 V
4.5 V
5V
TJ = 25C
4V
6V
20
3.5 V
10
3V
30
20
10
100C
2.5 V
0
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
TJ = 55C
1.4
1.8
2.2
2.6
3.0
3.4
3.8
4.2
VGS, GATETOSOURCE VOLTAGE (Volts)
VGS = 5 V
0.044
TJ = 100C
0.036
25C
0.028
55C
0.020
8
24
16
32
40
VDS, DRAINTOSOURCE VOLTAGE (Volts)
0.052
4.6
5.0
0.036
TJ = 25C
0.032
VGS = 5 V
0.028
10 V
0.024
0.020
0
16
24
32
40
ID, DRAIN CURRENT (Amps)

and Temperature

and Gate Voltage
1.8
1.6
1000
VGS = 5 V
ID = 10 A
VGS = 0 V
TJ = 125C
I DSS, LEAKAGE (nA)

(NORMALIZED)
25C
1.4
1.2
1.0
100
100C
10
25C
0.8
0.6
50
25
25
50
75
100
125
150
12
18
24

Temperature

30
4571
MTD20N03HDL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2800
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
2400
2000
Ciss
1600
1200
Crss
Ciss
800
Coss
400
0
10
Crss
0
5
VGS
10
15
20
25
VDS
4572
28
12
24
QT
10
20
16
VGS
12
Q1
Q2
8
ID = 20 A
TJ = 25C 4
2
Q3
0
VDS
4
10
12
0
14
1000
VDD = 15 V
ID = 20 A
VGS = 5.0 V
TJ = 25C
t, TIME (ns)
14
MTD20N03HDL
tr
100
tf
td(off)
10
td(on)
1
10


100

these losses.
snappy.
20
16
VGS = 0 V
TJ = 25C
12
4
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
1.0
VSD, SOURCETODRAIN VOLTAGE (Volts)
4573
MTD20N03HDL
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
200
100
VGS = 20 V
SINGLE PULSE
TC = 25C
100 s
10
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
4574
1.0
dc
10
100
ID = 20 A
160
120
80
40
25
50
75
100
125
150

Safe Operating Area

MTD20N03HDL
(NORMALIZED)

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4575
MOTOROLA
Data Sheet
HDTMOS E-FET.
Designer's
MTD20N06HD
TMOS POWER FET

20 AMPERES
60 VOLTS
RDS(on) = 0.045 OHM

voltage transients.

Fast Recovery Diode

DPAK
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
20
30
Vdc
Vpk

ID
ID
IDM
20
16
60
Adc

Derate above 25C
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
60
mJ

RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
Apk
REV 2
4576
MTD20N06HD
Characteristic
Symbol
Min
Typ
Max
60
54
10
100
100
2.0
7.0
4.0
0.035
0.045
1.2
1.1
5.0
6.0
Ciss
607
840
Coss
218
290
Crss
55
110
td(on)
9.2
18
tr
61.2
122
td(off)
19
38
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS

IDSS

IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 2.0) (3)

(Cpk 2.0) (3)

(ID = 20 Adc)
(ID = 10 Adc, TJ = 125C)
(VDS = 4.0 Vdc, ID = 10 Adc)
VGS(th)
Vdc
RDS(on)
mV/C
Ohm
VDS(on)
Vdc
gFS
mhos
Input Capacitance
Output Capacitance
Vd VGS = 0 Vdc,
Vd
(VDS = 25 Vdc,
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 7)
((VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
tf
36
72
QT
17
24
Q1
3.4
Q2
7.75
Q3
7.46
0.95
0.88
1.0
trr
35.7
ta
24
tb
11.7
QRR
0.055
4.5
7.5
ns
nC

Forward OnVoltage
(Cpk 8.0) (3)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4577
MTD20N06HD
40
8V
32
TJ = 25C
24
6V
16
5V
30
20
10
0.5
TJ = 55C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS = 10 V
TJ = 100C
0.044
0.040
0.036
25C
0.032
0.028
55C
0.024
0.020
10
20
30
40
0.040
TJ = 25C
0.038
VGS = 10 V
0.036
0.034
0.032
15 V
0.030
0.028
0
10
20
30

and Temperature

and Gate Voltage

(NORMALIZED)
0.052
0.048
25C
100C
0
VDS 10 V
7V
40
9V
VGS = 10 V
40
1.6
1.4
VGS = 10 V
ID = 10 A
1.2
1.0
0.8
0.6
50
25
25
50
75
100
125
150

Temperature
4578
MTD20N06HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1600
VDS = 0 V
1400
TJ = 25C
VGS = 0 V
C, CAPACITANCE (pF)
Ciss
1200
1000
800
Crss
Ciss
600
400
Coss
200
Crss
0
10
0
VGS
10
15
20
25
VDS
4579
60
QT
50
10
VGS
40
Q1
Q2
30
6
ID = 20 A
TJ = 25C
10
2
0
20
Q3
VDS
0
10
12
14
16
0
18
1000
VDD = 30 V
ID = 20 A
VGS = 10 V
TJ = 25C
tr
100
t, TIME (ns)
12
MTD20N06HD
tf
td(off)
10
td(on)
10


100

the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 10. It is this
these losses.
snappy.
(shorter trr), have less stored charge and a softer reverse
recovery characteristic. The softness advantage of the high
20
VGS = 0 V
TJ = 25C
18
16
14
12
10
8
6
4
2
0
0.50
0.58
0.66
0.74
0.82
0.90
0.98
4580
MTD20N06HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak
(TJ(MAX) TC)/(RJC).
(IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy
rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents
below rated continuous ID can safely be assumed to equal
the values indicated.
60
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
10 s
100 s
1 ms
10 ms
dc
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1.0
10
100
ID = 20 A
50
40
30
20
10
0
25
50
75
100
125
150

Safe Operating Area

4581
MTD20N06HD
(NORMALIZED)

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4582
MOTOROLA
Advance Information
MTD20N06HDL
HDTMOS E-FET
DPAK for Surface Mount or
Insertion Mount
TMOS POWER FET

LOGIC LEVEL
20 AMPERES
60 VOLTS
RDS(on) = 0.045 OHM

This advanced highcell density HDTMOS EFET is designed to
withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for lowvoltage,
highspeed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited
for bridge circuits, and inductive loads. The avalanche energy
capability is specified to eliminate the guesswork in designs where
inductive loads are switched, and to offer additional safety margin
Fast Recovery Diode
Available in Insertion Mount, Add 1 or 1 to Part Number

DPAK
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
20
12
60
Adc

Derate above 25C
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150
Rating
Apk

EAS

RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
mJ
200
REV 1
4583
MTD20N06HDL
Characteristic
Symbol
Min
Typ
Max
Unit
60
25
10
100
100
1.0
1.5
6.0
2.0
0.045
0.037
0.070
0.045
0.76
1.2
1.1
gFS
6.0
12
mhos
Ciss
863
1232
pF
Coss
216
300
Crss
53
73
td(on)
11
15
tr
151
190
td(off)
34
35
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
RDS(on)

(ID = 20 Adc)
(ID = 10 Adc, TJ = 125C)
VDS(on)
Vdc
mV/C
Ohm
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5.0
5 0 Vdc,
Vdc
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc)
tf
75
98
QT
14.6
22
Q1
3.25
Q2
7.75
Q3
7.0
0.95
0.88
1.1
trr
22
ta
12
tb
34
QRR
0.049
4.5
7.5
ns
nC

Forward OnVoltage

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 20 Adc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4584
MTD20N06HDL
40
8V
6V
5V
4.5 V
30
4V
40
VGS = 10 V
TJ = 25C
3.5 V
20
3V
10
VDS 10 V
30
20
100C
10
25C
2.5 V
0
0.2
0.6
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0
1.5
2.0
TJ = 55C
2
VGS = 5 V
TJ = 100C
0.05
25C
0.03
55C
0.02
0.01
0
0
10
20
30
40
0.07
0.04
3.5
4.5
0.05
TJ = 25C
0.045
5V
0.04
0.035
VGS = 10 V
0.03
0.025
0
10
20
30
40

and Temperature

and Gate Voltage
1.6
1.4
1000
VGS = 5 V
ID = 10 A
VGS = 0 V

(NORMALIZED)
0.06
2.5
1.2
1.0
TJ = 125C
100
100C
10
25C
0.8
0.6
50
25
25
50
75
100
125

Temperature
150
10
20
30
40
50
60

4585
MTD20N06HDL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
3000
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
2500 Ciss
2000
1500 C
rss
Ciss
1000
Coss
500
0
10
Crss
5
0
VGS
10
15
20
25
VDS
4586
60
QT
50
10
VGS
VDS
40
30
6
Q1
Q2
ID = 20 A
TJ = 25C
4
2
0
20
10
Q3
0
10
12
14
0
16
1000
VDD = 30 V
ID = 20 A
VGS = 5 V
TJ = 25C
tr
100
tf
t, TIME (ns)
12
MTD20N06HDL
td(off)
10
td(on)
10


100

these losses.
snappy.
20
VGS = 0 V
TJ = 25C
16
12
4
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.9
0.95
4587
MTD20N06HDL
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
200
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10 s
100 s
10
1 ms
10 ms
1.0
0.1
4588
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
dc
10
100
ID = 20 A
150
100
50
25
50
75
100
125
150

Safe Operating Area

MTD20N06HDL
(NORMALIZED)

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0
10
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4589
MOTOROLA
Product Preview
MTD20N06V
TMOS V
TMOS POWER FET

20 AMPERES
60 VOLTS
RDS(on) = 0.085 OHM

TM


DPAK Surface Mount

Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
20
25
Vdc
Vpk

ID
ID
IDM
20
13
70
Adc

Derate above 25C
PD
60
0.4
2.1
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
200
mJ
RJC
RJA
RJA
2.5
100
71.4
C/W
TL
260
Rating

Apk
4590
MTD20N06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
TBD
10
100
100
2.0
2.8
TBD
4.0
mV/C
0.065
0.085
Ohm
2.0
1.9
gFS
6.0
8.0
mhos
Ciss
590
830
pF
Coss
180
250
Crss
40
80
td(on)
8.7
20
tr
77
150
td(off)
26
50
tf
46
90
QT
28
40
Q1
4.0
Q2
9.0
Q3
8.0
1.0
0.96
1.6
trr
60
ta
52
tb
8.0
QRR
0.172
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 20 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4591
MOTOROLA
Data Sheet
HDTMOS E-FET.
Designer's
MTD20P03HDL
TMOS POWER FET

LOGIC LEVEL
19 AMPERES
30 VOLTS
RDS(on) = 0.099 OHM

voltage transients.


DPAK
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
30
Vdc
VDGR
30
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
19
12
57
Adc

Derate above 25C
PD
75
0.6
1.75
Watts
W/C
TJ, Tstg
55 to 150

EAS
200
mJ

RJC
RJA
RJA
1.67
100
71.4
C/W
TL
260
Apk
REV 2
4592
MTD20P03HDL
Characteristic
Symbol
Min
Typ
Max
30
15
10
100
100
1.0
1.5
4.0
2.0
120
90
99
0.94
2.2
1.9
5.0
6.0
Ciss
770
1064
Coss
360
504
Crss
130
182
td(on)
18
25.2
tr
178
246.4
td(off)
21
26.6
tf
72
98
QT
15
22.4
Q1
3.0
Q2
11
Q3
8.2
3.1
2.56
3.4
trr
78
ta
50
tb
28
QRR
0.209
4.5
7.5
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS

IDSS

IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 2.0) (3)

(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 9.5 Adc)
(Cpk 2.0) (3)

(ID = 19 Adc)
(ID = 9.5 Adc, TJ = 125C)
(VDS = 8.0 Vdc, ID = 9.5 Adc)
VGS(th)
Vdc
RDS(on)
mV/C
m
VDS(on)
Vdc
gFS
mhos
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5.0
5 0 Vdc,
Vdc
RG = 1.3 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 24 Vdc, ID =19 Adc,
VGS = 5.0 Vdc)
ns
nC

Forward OnVoltage
(Cpk 2.0) (3)

(IS = 19 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 15)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4593
MTD20P03HDL
40
40
VGS = 10 V
24
4V
16
3.5 V
8
3V
2.5 V
0
1
0.16
100C
24
16
1.5
2.0
2.5
3.5
3.0
4.0
4.5
VGS = 5 V
0.14
TJ = 100C
0.12
0.10
25C
0.08
55C
0.06
0
25C
32
0
1.0
12
16
20
24
28
32
40
36
0.16
5.0
5.5
36
40
TJ = 25C
0.14
0.12
VGS = 5 V
0.10
0.08
10 V
0.06
0
12
16
20
24
28
32

and Temperature

and Gate Voltage
1.3
100
VGS = 5 V
ID = 10 A
VGS = 0 V
TJ = 125C
1.2
I DSS, LEAKAGE (nA)

(NORMALIZED)
4.5 V
TJ = 55C
5V
8V
32
VDS 5 V
6V
TJ = 25C
1.1
1.0
10
100C
0.9
0.8
50
4594
25
25
50
75
100
125
150
12
16
20
24
28

Temperature

32
MTD20P03HDL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2800
VDS = 0 V
TJ = 25C
VGS = 0 V
C, CAPACITANCE (pF)
2400
2000
Ciss
1600
1200 C
rss
Ciss
800
Coss
400
0
10
Crss
0
5
VGS
10
15
20
25
VDS
4595
35
QT
30
Q2
25
VGS
Q1
4
20
15
ID = 19 A
TJ = 25C
2
1
0
VDS
Q3
0
10
10
12
0
16
14
1000
VDD = 15 V
ID = 19 A
VGS = 5.0 V
TJ = 25C
t, TIME (ns)
MTD20P03HDL
tr
tf
100
td(off)
td(on)
10
10



these losses.
snappy.
20
VGS = 0 V
TJ = 25C
16
12
4
0
0.3
0.7
1.1
1.5
1.9
2.3
2.7
3.1
4596
MTD20P03HDL
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
200
VGS = 20 V
SINGLE PULSE
TC = 25C

100
100 s
1 ms
10
10 ms
dc
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1.0
10
100
ID = 19 A
160
120
80
40
25
50
75
100
125
150

Safe Operating Area

4597
MTD20P03HDL
(NORMALIZED)

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4598
MOTOROLA
Data Sheet
HDTMOS E-FET
Designer's
MTD20P06HDL
TMOS POWER FET

LOGIC LEVEL
15 AMPERES
60 VOLTS
RDS(on) = 175 M

The new energy efficient design also offers a draintosource
and PWM motor controls, and other inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.

Unit, Tape & Reel, Add T4 Suffix to Part Number
G
DPAK
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
15
9.0
45
Adc

Derate above 25C
PD
72
0.58
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150

EAS
300
mJ

RJC
RJA
RJA
1.73
100
71.4
C/W
TL
260
Rating
Apk
REV 1
4599
MTD20P06HDL
Characteristic
Symbol
Min
Typ
Max
Unit
60
81.3
1.0
10
100
1.0
1.7
3.9
2.0
mV/C
143
175
2.3
1.6
3.0
2.0
gFS
9.0
11
mhos
pF
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)

(VGS = 5.0 Vdc, ID = 7.5 Adc)
RDS(on)

(ID = 15 Adc)
(ID = 7.5 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Ciss
850
1190
Coss
210
290
Crss
66
130
td(on)
19
38

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5.0
5 0 Vdc,
Vdc
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc)
tr
175
350
td(off)
41
82
tf
68
136
QT
20.6
29
Q1
3.7
Q2
7.6
Q3
8.4
2.5
1.9
3.0
trr
64
ta
50
ns
nC

Forward OnVoltage

(IS = 15 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns
tb
14
QRR
0.177

LD
4.5
nH

LS
7.5
nH


4600
MTD20P06HDL
30
VGS = 10 V
TJ = 25C
30
9V
20
15
6V
10
5V
5
4V
0
0.40
VDS 5 V
25
25C
TJ = 55C
20
100C
15
10
5
0
10
VGS = 5 V
0.32
0.24
TJ = 100C
25C
0.16
55C
0.08
0
0
10
20
15
30
25
0.275
TJ = 25C
0.250
0.225
0.200
0.175
VGS = 5 V
0.150
10 V
0.125
0.100
0
10
15
20
30
25

and Temperature

and Gate Voltage
100
1.8
1.6
VGS = 0 V
VGS = 5 V
ID = 7.5 A
1.4
I DSS, LEAKAGE (nA)

(NORMALIZED)
7V
25
8V
1.2
1
0.8
0.6
TJ = 125C
10
100C
0.4
0.2
0
50
25
25
50
75
100
125
150
10
20
30
40
50

Temperature

60
4601
MTD20P06HDL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2500
VDS = 0 V
TJ = 25C
VGS = 0 V
Ciss
C, CAPACITANCE (pF)
2000
1500
Crss
Ciss
1000
500
Coss
Crss
0
10
0
VGS
10
15
20
25
VDS
4602
50
QT
45
40
35
4
VDS
30
VGS
25
Q1
Q2
15
10
1
0
20
ID = 15 A
TJ = 25C
Q3
5
8
12
16
0
24
20
1000
VDD = 30 V
ID = 15 A
VGS = 5.0 V
TJ = 25C
100
tr
tf
t, TIME (ns)
MTD20P06HDL
td(off)
td(on)
10
10


100

these losses.
snappy.
15
VGS = 0 V
TJ = 25C
12
0
0.5
0.75
1.25
1.5
1.75
2.25
2.5
4603
MTD20P06HDL
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
300
VGS = 20 V
SINGLE PULSE
TC = 25C
100 s
10
1 ms
10 ms
dc
1.0
0.1
0.1
4604
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
10
100

100
ID = 15 A
240
180
120
60
25
50
75
100
125
150

Safe Operating Area

MTD20P06HDL
(NORMALIZED)

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4605
MOTOROLA
Product Preview
MTD2955V
TMOS V
TMOS POWER FET

12 AMPERES
60 VOLTS
RDS(on) = 0.200 OHM

TM


DPAK Surface Mount

Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
15
25
Vdc
Vpk

ID
ID
IDM
12
8.0
42
Adc

Derate above 25C
PD
60
0.4
2.1
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
216
mJ
RJC
RJA
RJA
2.5
100
71.4
C/W
TL
260
Rating

Apk
4606
MTD2955V
Characteristic
Symbol
Min
Typ
Max
Unit
60
TBD
10
100
100
2.0
2.8
TBD
4.0
mV/C
0.185
0.200
Ohm
2.9
2.8
gFS
3.0
5.0
mhos
Ciss
500
700
pF
Coss
200
280
Crss
40
80
td(on)
11
20
tr
38
80
td(off)
18
40
tf
26
50
QT
15
20
Q1
4.0
Q2
7.0
Q3
6.0
1.8
TBD
3.0
trr
114
ta
86
tb
28
QRR
0.553
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 12 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4607
MOTOROLA
Designer's
Data Sheet
MTD3055V
TMOS V
TMOS POWER FET

12 AMPERES
60 VOLTS
RDS(on) = 0.15 OHM

TM


DPAK
G
S

TMOS EFET
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
20
25
Vdc
Vpk

ID
ID
IDM
12
7.3
37
Adc

Derate above 25C
PD
48
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
72
mJ
RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
Rating
DrainSource Voltage
GateSource Voltage Nonrepetitive (tp 10 ms)

Apk
EFET, Designers and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 2
4608
MTD3055V
Characteristic
Symbol
Min
Typ
Max
Unit
60
65
Vdc
mV/C
10
100
100
nAdc
2.0
2.7
5.4
4.0
Vdc
mV/C
0.10
0.15
Ohm
1.3
2.2
1.9
gFS
4.0
5.0
mhos
Ciss
410
500
pF
Coss
130
180
Crss
25
50
td(on)
7.0
10
tr
34
60
td(off)
17
30
tf
18
50
QT
12.2
17
Q1
3.2
Q2
5.2
Q3
5.5
1.0
0.91
1.6
trr
56
ta
40
tb
16
QRR
0.128

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 12 Adc, VGS = 0 Vdc, TJ = 150C)

(See Figure
Fig re 15)
dIS/dt = 100 A/s)
VSD
Vdc
ns

4609
MTD3055V
VGS = 10 V
9V
TJ = 25C
20
24
8V
24
7V
16
12
6V
8
5V
4
VDS 10 V
TJ = 55C
100C
20
25C
16
12
8
4
4V
0
0.3
0.2
TJ = 100C
0.15
25C
0.1
55C
0.05
8
12
16
20
24
0.15
10
TJ = 25C
0.14
0.13
0.12
VGS = 10 V
0.11
0.1
15 V
0.09
0.08

and Temperature
8
16
12
20
24

and Gate Voltage
1.6
100
VGS = 0 V
VGS = 10 V
ID = 6 A

(NORMALIZED)
VGS = 10 V
1.4
0.25
R DS(on), DRAINTOSOURCE RESISTANCE (OHMS)
1.2
1.0
10
TJ = 125C
0.8
0.6
50
25
0
25
50
75
100 125
150

Temperature
4610
175
20
30
40
50
10
60

MTD3055V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1200
VDS = 0 V
C, CAPACITANCE (pF)
1000
VGS = 0 V
TJ = 25C
Ciss
800
600
Crss
Ciss
400
Coss
200
Crss
0
10
0
VGS
10
15
20
25
VDS
4611
QT
50
10
VGS
Q1
Q2
40
30
6
4
2
0
20
ID = 12 A
TJ = 25C
VDS
Q3
0
10
11
12
10
0
13
1000
VDD = 30 V
ID = 12 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
60
12
MTD3055V
100
tr
td(off)
tf
td(on)
10
1
1
10


100

12
10
VGS = 0 V
TJ = 25C
8
6
4
2
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
1.0
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4612
temperature.
MTD3055V
SAFE OPERATING AREA
75
10 s
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10
100 s
1 ms
10 ms
1.0
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
50
25
0
10
1.0
ID = 12 A
100
25
50
75
100
125
150
175

Safe Operating Area


1.0
D = 0.5
0.2
0.1
P(pk)
0.1 0.05
0.02
0.01
t1
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4613
MOTOROLA
Designer's
Data Sheet
MTD3055VL
TMOS V
TMOS POWER FET

12 AMPERES
60 VOLTS
RDS(on) = 0.18 OHM

TM


DPAK Surface Mount
S

TMOS EFET
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
15
20
Vdc
Vpk

ID
ID
IDM
12
8.0
42
Adc

Derate above 25C
PD
48
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 175
72
mJ
RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
Rating
DrainSource Voltage
GateSource Voltag Single Pulse (tp 50 ms)

Apk
REV 2
4614
MTD3055VL
Characteristic
Symbol
Min
Typ
Max
Unit
60
62
Vdc
mV/C
10
100
100
nAdc
1.0
1.6
3.0
2.0
Vdc
mV/C
0.12
0.18
Ohm
1.6
2.6
2.5
gFS
5.0
8.8
mhos
Ciss
410
570
pF
Coss
114
160
Crss
21
40
td(on)
9.0
20
tr
85
190
td(off)
14
30
tf
43
90
QT
8.1
10
Q1
1.8
Q2
4.2
Q3
3.8
0.97
0.86
1.3
trr
55.7
ta
37
tb
18.7
QRR
0.116

LD
3.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5
5.0
0 Vdc,
Vdc
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 12 Adc,
VGS = 5 Vdc)
ns
nC


(IS = 12 Adc, VGS = 0 Vdc, TJ = 150C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

4615
MTD3055VL
24
16
4.5 V
4V
12
3.5 V
8
3V
20
100C
16
12
8
0
2.0
3.5
4.5
4.0
5.5
5.0
0.20
TJ = 100C
0.14
25C
55C
0.08
20
8
12
16
24
TJ = 25C
0.22
0.17
5V
0.12
VGS = 10 V
0.07
100
1.5
1.0
0.5
25
50
75
100
125
150
8
12
16
20
24
VGS = 0 V
VGS = 5 V
ID = 6 A

and Gate Voltage
2.0
25
6.0
0.27

and Temperature
4616
3.0
VGS = 5 V
0
50
2.5
0.26

(NORMALIZED)
TJ = 55C
25C
0.32
0.02
VDS 10 V
2.5 V
20
24
5V
VGS = 10 V
TJ = 25C
175
10
TJ = 125C
1.0
100C
0.1
30
10
20
40
50

Temperature

60
MTD3055VL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1400
1200
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
TJ = 25C
Ciss
1000
800
600
Ciss
Crss
400
Coss
200
Crss
0
10
0
VGS
10
15
20
25
VDS
4617
60
QT
50
40
VGS
30
Q2
Q1
2
20
ID = 12 A
TJ = 25C
Q3
2
VDS
4
10
0
10
1000
VDD = 30 V
ID = 12 A
VGS = 5 V
TJ = 25C
t, TIME (ns)
MTD3055VL
tr
tf
100
td(off)
10
td(on)
1
1
10


100

12
10
VGS = 0 V
TJ = 25C
8
6
4
2
0
0.50 0.55 0.60 0.65 0.70
0.75 0.80 0.85 0.90 0.95
1.0
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4618
temperature.
MTD3055VL
SAFE OPERATING AREA
75
VGS = 5 V
SINGLE PULSE
TC = 25C
10 s
10
100 s
1 ms
10 ms
1.0
ID = 12 A

100
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
50
25
0.1
0
1.0
0.1
10
25
100
50
75
100
125
150
175

Safe Operating Area


1.0
D = 0.5
0.2
0.1
P(pk)
0.1 0.05
0.02
t1
0.01
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4619
MOTOROLA
Advance Information
MTDF1N02HD
TMOS Dual N-Channel

Field Effect Transistor
Micro8 devices are an advanced series of power MOSFETs

which utilize Motorolas High Cell Density HDTMOS process to
achieve lowest possible onresistance per silicon area. They are
capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse
recovery time. Micro8 devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dcdc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
G
Miniature Micro8 Surface Mount Package Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Mounting Information for Micro8 Package Provided
SINGLE TMOS
POWER MOSFET
1.7 AMPERES
20 VOLTS
RDS(on) = 0.120 OHM

Micro8
S
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View
Rating
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
PD
8.0
Vdc
1.9
1.7
14
Adc
0.625
5.0
Watts
mW/C
PD
1.25
10
Watts
mW/C
TJ, Tstg
55 to 150
Typ.
Max.
Unit
Apk
THERMAL RESISTANCE
Rating
Symbol

RJA
160
200
C/W
RJA
240
300
RJA
80
100
Junction to Ambient, PBD Mount (3)
When mounted on FR4/G10 board using min. recommended footprint, based on PD in 1 die, 1 die operating. (VGS = 4.5 V, @ Steady State)
When mounted on FR4/G10 board using min. recommended footprint, based on PD in 1 die, both dies operating. (VGS = 4.5 V, @ Steady State)
When mounted on 1 inch square copper board, for comparison to the other SMD devices. (VGS = 4.5 V, @ Steady State)
Repetitive rating; pulse width limited by maximum junction temperature.
Thermal Resistance
(1)
(2)
(3)
(4)
DEVICE MARKING
BA
Device
MTDF1N02HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
4000 units
REV 1
4620
MTDF1N02HD
Characteristic
Symbol
Min
Typ
Max
Unit
20
5.0
1.0
25
100
0.7
0.9
2.5
99
133
120
160
gFS
2.0
Mhos
Ciss
145
pF
Coss
90
Crss
38
td(on)
8.0
tr
27
td(off)
23
tf
34
td(on)
16
tr
79
td(off)
24
tf
31
QT
3.9
5.5
Q1
0.4
Q2
1.7
Q3
1.5
0.84
0.71
1.0
trr
29
ta
14
tb
15
QRR
0.018
OFF CHARACTERISTICS
(Cpk 2.0)

(1) (3)
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 2.0)

(VGS = 4.5 Vdc, ID = 1.7 Adc)
(VGS = 2.7 Vdc, ID = 0.85 Adc)
(Cpk 2.0)
(3)
(3)
VGS(th)
Vdc
RDS(on)
mV/C
m
Input Capacitance
Output Capacitance
(VDS = 15 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDS = 10 Vdc, ID = 1.7 Adc,

VGS = 4.5 Vdc, RG = 6 ) (1)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 10 Vdc, ID = 0.85 Adc,

VGS = 2.7 Vdc, RG = 6 ) (1)
Fall Time
Gate Charge
((VDS = 16 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc)
ns
ns
nC

Forward OnVoltage
(IS = 1.7 Adc, VGS = 0 Vdc) (1)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125C)

(IS = 1
1.7
7 Ad
Adc, VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (1)
VSD
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4621
MTDF1N02HD
4
VDS 10 V
VGS = 10 V
4.5 V
2.7 V
2.3 V
TJ = 25C
1.9 V
2.1 V
1.7 V
1
1.5 V
2
100C
25C
TJ = 55C
0
0
1.2
0.8
0.4
1.6
1.5
2.5
0.6
ID = 1.7 A
TJ = 25C
0.5
0.4
0.3
0.2
0.1
0
0
4
6
8
10
0.15
2.7 V
TJ = 25C
0.13
0.11
VGS = 4.5 V
0.09
0.07
0.05
0


and Gate Voltage
1000
2.0
VGS = 4.5 V
ID = 1.7 A
VGS = 0 V
TJ = 125C
1.6
0.5
1.2
0.8
100
100C
10
25C
1
0.4
0
50
4622
0.1
25
25
50
75
100
125
150
10
15

with Temperature

versus Voltage
20
MTDF1N02HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
800
C, CAPACITANCE (pF)
600
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
Crss
400
Coss
200
Ciss
0
10
Crss
5
0
VGS
10
15
20
VDS
4623
18
QT
15
12
4
VDS
VGS
9
Q1
Q2
6
2
1
0
ID = 1.7 A
TJ = 25C
Q3
1
2
3
100
t, TIME (ns)
MTDF1N02HD
VDD = 10 V
ID = 1.7 A
VGS = 4.5 V
TJ = 25C
10
tf
tr
td(off)
td(on)
10

100


snappy.

these losses.
2.0
VGS = 0 V
TJ = 25C
1.6
1.2
0.8
0.4
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
4624
MTDF1N02HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

The Forward Biased Safe Operating Area curve (Figure
12) defines the maximum simultaneous draintosource voltage and drain current that a transistor can handle safely
when it is forward biased. Curves are based upon maximum
peak junction temperature and a case temperature (TC) of
25C. Peak repetitive pulsed power limits are determined by
using the thermal response data in conjunction with the procedures discussed in AN569, Transient Thermal Resistance
General Data and Its Use.

(TJ(MAX) TC)/(RJC).
100
10
VGS = 8 V
SINGLE PULSE
TC = 25C
1 ms
100 s
10 ms
1
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100

Safe Operating Area
4625
MTDF1N02HD

THERMAL RESISTANCE
1000
100
10
D = 0.5
0.2
0.1
0.05
0.02
P(pk)
0.01
1
t1
t2
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+01
1.0E+02
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4626
MTDF1N02HD
TAPE & REEL INFORMATION
Micro8
Dimensions are shown in millimeters (inches)
1.60 (.063)
1.50 (.059)
2.05 (.080)
1.95 (.077)
PIN
NUMBER 1
4.10 (.161)
3.90 (.154)
1.85 (.072)
1.65 (.065)
0.35 (.013)
0.25 (.010)
5.55 (.218)
5.45 (.215)
12.30
11.70
(.484)
(.461)
3.50 (.137)
3.30 (.130)
1.60 (.063)
1.50 (.059)
TYP.
FEED DIRECTION
8.10 (.318)
7.90 (.312)
1.50 (.059)
1.30 (.052)
SECTION AA
5.40 (.212)
5.20 (.205)
SECTION BB
NOTES:
1. CONFORMS TO EIA4811.
2. CONTROLLING DIMENSION: MILLIMETER.
18.4 (.724)
MAX.
NOTE 3
13.2 (.52)
12.8 (.50)
330.0
(13.20)
MAX.
NOTES:
3. INCLUDES FLANGE DISTORTION AT OUTER EDGE.
4. DIMENSION MEASURED AT INNER HUB.
50.0
(1.97)
MIN.
14.4 (.57)
12.4 (.49)
NOTE 4
4627
MOTOROLA
Advance Information
MTDF1N03HD
TMOS Dual N-Channel


G
PCMCIA cards
SINGLE TMOS
POWER MOSFET
1.7 AMPERES
30 VOLTS
RDS(on) = 0.120 OHM

Micro8
S
Source1
Drain1
Gate1
Drain1
Source2
Drain2
Gate2
Drain2
Top View

Rating
Symbol
Value
Unit
VDSS
VDGR
30
Vdc
30
Vdc
VGS
ID
ID
IDM
PD
20
Vdc
1.9
1.6
14
Adc
0.625
5.0
Watts
mW/C
PD
1.25
10
Watts
mW/C
TJ, Tstg
55 to 150
Typ.
Max.
Unit
Apk
THERMAL RESISTANCE
Rating
Symbol

RJA
160
200
C/W
RJA
240
300
RJA
80
100
Junction to Ambient, PBD Mount (3)
When mounted on FR4/G10 board using min. recommended footprint, based on PD in 1 die, 1 die operating. (VGS = 10 V, @ Steady State)
When mounted on FR4/G10 board using min. recommended footprint, based on PD in 1 die, both dies operating. (VGS = 10 V, @ Steady State)
When mounted on 1 inch square copper board, for comparison to the other SMD devices. (VGS = 10 V, @ Steady State)
Repetitive rating; pulse width limited by maximum junction temperature.
Thermal Resistance
(1)
(2)
(3)
(4)
DEVICE MARKING
BB
Device
MTDF1N03HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
4000 units
REV 1
4628
MTDF1N03HD
Characteristic
Symbol
Min
Typ
Max
Unit
30
29
1.0
25
100
1.0
1.6
3.7
96
135
120
160
gFS
1.0
2.0
Mhos
Ciss
140
pF
Coss
70
Crss
30
td(on)
7.5
tr
10
td(off)
22
tf
18
td(on)
7.0
tr
8.2
td(off)
22
tf
14.5
QT
5.0
7.0
Q1
0.5
Q2
1.65
Q3
1.3
0.84
0.7
1.0
trr
20
ta
12
tb
8.0
QRR
0.012
OFF CHARACTERISTICS
(Cpk 2.0)

(1) (3)
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 2.0)

(VGS = 10 Vdc, ID = 1.7 Adc)
(VGS = 4.5 Vdc, ID = 0.85 Adc)
(Cpk 2.0)
(3)
(3)
(1)
VGS(th)
Vdc
RDS(on)
mV/C
m
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDS = 15 Vdc, ID = 1.7 Adc,

VGS = 10 Vdc, RG = 6 ) (1)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 0.85 Adc,

VGS = 4.5 Vdc, RG = 6 ) (1)
Fall Time
Gate Charge
((VDS = 24 Vdc, ID = 1.7 Adc,
VGS = 10 Vdc)
ns
ns
nC

Forward OnVoltage
(IS = 1.7 Adc, VGS = 0 Vdc) (1)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125C)

(IS = 1
1.7
7 Ad
Adc, VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (1)
VSD
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4629
MTDF1N03HD
VGS = 10 V
6V
4.5 V
TJ = 25C
3.5 V
VDS 10 V
3.9 V
3
3.7 V
3.3 V
3.1 V
2.9 V
1
2.7 V
100C
25C
2.5 V
2.3 V
0
0.5
1.5
0
1.5
2.5
3.5
0.6
ID = 1.7 A
TJ = 25C
0.5
0.4
0.3
0.2
0.1
0
0
4
6
8
10
4.5
0.18
TJ = 25C
0.16
VGS = 4.5
0.14
0.12
10 V
0.1
0.08
0


and Gate Voltage
100
2.5
VGS = 10 V
ID = 0.85 A
VGS = 0 V
TJ = 125C
2.0
TJ = 55C
1.5
1.0
10
100C
25C
0.5
0
50
4630
0.1
25
25
50
75
100
125
150
10
15
20
25

with Temperature

versus Voltage
30
MTDF1N03HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
500
C, CAPACITANCE (pF)
400
300
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
Crss
200
Ciss
100
Coss
Crss
0
10
5
VGS
10
15
20
25
30
VDS
4631
30
QT
10
25
20
VGS
VDS
15
6
4 Q1
2
0
Q2
10
ID = 1.7 A
TJ = 25C
Q3
1
4
2
3
100
t, TIME (ns)
12
MTDF1N03HD
VDD = 15 V
ID = 1.7 A
VGS = 10 V
TJ = 25C
10
td(off)
tf
tr
td(on)
10

100


these losses.
snappy.
VGS = 0 V
TJ = 25C
1.5
0.5
0.6
0.65
0.7
0.75
0.8
0.85
0.9
4632
MTDF1N03HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
200
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
10 s
100 s
1 ms
10 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
dc
10
160
120
80
40
0
100

Safe Operating Area
VDD = 30 V
VGS = 10 V
IL = 2.4 A
L = 69 mH
25
50
75
100
125
150

4633
MTDF1N03HD

THERMAL RESISTANCE
1000
100
10
D = 0.5
0.2
0.1
0.05
0.02
P(pk)
0.01
1
t1
t2
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+01
1.0E+02
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4634
MTDF1N03HD
Micro8
1.60 (.063)
1.50 (.059)
2.05 (.080)
1.95 (.077)
PIN
NUMBER 1
4.10 (.161)
3.90 (.154)
1.85 (.072)
1.65 (.065)
0.35 (.013)
0.25 (.010)
5.55 (.218)
5.45 (.215)
12.30
11.70
(.484)
(.461)
3.50 (.137)
3.30 (.130)
1.60 (.063)
1.50 (.059)
TYP.
FEED DIRECTION
8.10 (.318)
7.90 (.312)
1.50 (.059)
1.30 (.052)
SECTION AA
5.40 (.212)
5.20 (.205)
SECTION BB
NOTES:
18.4 (.724)
MAX.
NOTE 3
13.2 (.52)
12.8 (.50)
330.0
(13.20)
MAX.
NOTES:
50.0
(1.97)
MIN.
14.4 (.57)
12.4 (.49)
NOTE 4
4635
MOTOROLA
Advance Information
MTE30N50E
ISOTOP TMOS E-FET.

TMOS POWER FET

30 AMPERES
500 VOLTS
RDS(on) = 0.150 OHM

energy in the avalanche mode and switch efficiently. This new
energy design also offers a draintosource diode with fast
applications in power supplies, PWM motor controls, and other
inductive loads. The avalanche energy capability is specified to
voltage transients.
4
1
2500 V RMS Isolated ISOTOP Package

Fast Recovery Diode
Very Low Internal Parasitic Inductance
U.L. Recognized, File #E69369
3
2
G
SOT227B
S
1.
2.
3.
4.
Source
Gate
Drain
Source 2

Rating
Symbol
Value
Unit
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
30
12
80
Adc

Derate above 25C
PD
250
2.0
Watts
W/C
TJ, Tstg
55 to 150
Apk

(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL= 30 Apk, L = 10 mH, RG = 25 )
EAS

RJC
RJA
0.5
62.5
C/W
TL
260
mJ
3000
4636
MTE30N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
560
566
10
200
100
2.0
3.2
7.0
4.0
mV/C
0.13
0.15
Ohms
4.1
5.0
7.0
gFS
17
mhos
Ciss
7200
10080
pF
Coss
775
1200
Crss
120
250
td(on)
32
60
tr
105
175
td(off)
160
275
tf
115
200
QT
235
350
Q1
35
Q2
110
Q3
65
0.95
0.88
1.2
trr
485
ta
312
tb
173
QRR
8.2
LD
5.0
nH
LS
5.0
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 Vdc, ID = 30 Adc,

VGS = 10 Vdc
Vdc,
RG = 4.7 )
Fall Time
Gate Charge
(see fig
figure
re 8)
((VDS = 400 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 30 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

4637
MTE30N50E
TJ = 25C
50
60
VGS = 10 V
8V
6V
40
30
5V
20
VDS 10 V
50
60
40
30
100C
20
10
10
25C
4V
0
TJ = 55C
0
0
4
8
2
6
10
12
0.35
VGS = 10 V
0.3
TJ = 100C
0.25
0.2
25C
0.15
0.1
55C
0.5
0
0
10
20
30
40
6.5
50
60
0.17
TJ = 25C
0.16
0.15
VGS = 10 V
0.14
15 V
0.13
0.12

and Temperature
2.5
10
20
30
40
50
60

and Gate Voltage
10000
VGS = 10 V
ID = 15 A
VGS = 0 V
TJ = 125C
2
1000
I DSS, LEAKAGE (nA)

(NORMALIZED)
3
3.5
4
4.5
5.5
5
6

2.5
1.5
25
0
50
100
25
75
125

Temperature
4638
100
25C
10
0.5
0
50
100C
150
100
200
300
400
500

versus Voltage
MTE30N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
100000
24000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
20000
VGS = 0 V
16000
12000
Crss
Ciss
8000
Coss
4000
0
10
Crss
5
0
VGS
10
15
20
25
TJ = 25C
10000
Ciss
1000
Coss
100
10
10
Crss
100
1000
VDS
4639
600
QT
10
500
VGS
Q1
400
Q2
300
200
ID = 30 A
TJ = 25C
2
0
VDS
Q3
0
50
100
150
200
100
0
250
10000
t, TIME (ns)
12
MTE30N50E
VDD = 250 V
ID = 30 A
VGS = 10 V
TJ = 25C
1000
td(off)
tf
tr
100
td(on)
10
1
10
Figure 8. GateToSource and

DrainToSource Voltage versus Total Charge
100

SAFE OPERATING AREA

Data and Its Use.
(tr,tf) do not exceed 10 s. In addition the total power aver-
aged over a complete switching cycle must not exceed

(TJ(MAX) TC)/(RJC).
temperature.
30
QRR, STORED CHARGE ( C)
dlS/dt = 100 A/s

VDD = 50 V
TJ = 25C
7
6
5
4
3
2
4640
12
18
24
30
VGS = 0 V
TJ = 25C
20
10
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
Figure 10. Stored Charge
MTE30N50E
SAFE OPERATING AREA
100
10 s
VGS = 20 V
SINGLE PULSE
TC = 25C
100 s
10
1 ms
10 ms
dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
10
100
1
3000
ID = 30 A
2500
2000
1500
1000
500
0
1000


Safe Operating Area
25
50
75
100
125
150

1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4641
MOTOROLA
Data Sheet
ISOTOP TMOS E-FET.
Designer's
MTE53N50E
TMOS POWER FET

53 AMPERES
500 VOLTS
RDS(on) = 0.080 OHM

4
1
2500 V RMS Isolated Isotop Package

Fast Recovery Diode
U. L. Recognized, File #E69369
3
2
D
SOT227B
1.
2.
3.
4.
Source
Gate
Drain
Source 2

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
53
33
210
Adc

Derate above 25C
PD
460
3.70
Watts
W/C
TJ, Tstg
40 to 150

(VDD = 25 Vdc, VGS = 10 Vdc, IL= 53 Apk, L = 0.29 mH, RG =25)
EAS
mJ
RMS Isolation Voltage
VISO
2500
Vac

RJC
RJA
0.28
62.5
C/W
TL
260
400
REV 1
4642
MTE53N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
560
550
Vdc
mV/C
10
100
200
nAdc
2.0
3.2
4.0
Vdc
mV/C
63
80
mOhm
4.8
4.3
gFS
25
45
mhos
Ciss
14400
pF
Coss
1560
Crss
240
td(on)
67
tr
322
td(off)
362
tf
310
QT
474
Q1
86
Q2
206
Q3
148
0.95
0.90
1.3
trr
720
ta
460
tb
260
QRR
15
3.5
5.0
5.0
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
DrainSource OnVoltage (VGS = Vdc)

(ID = 53 Adc)
(ID = 26.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 Vdc, ID = 53 Adc,

VGS = 10 Vdc
Vdc,
RG = 4.7 )
Fall Time
Gate Charge
((VDS = 400 Vdc, ID = 53 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 53 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

(Measured from the source lead 0.25 from package to center of die)
LS
nH
nH

4643
MTE53N50E
120
VDS 10 V
7V
80
6V
60
100
100
120
VGS = 10 V
8V
TJ = 25C
5V
40
80
60
100C
40
25C
20
20
4V
TJ = 55C
0
0
3
5
2
4
6
7
8
0.16
VGS = 10 V
TJ = 100C
0.12
0.08
25C
55C
0.04
0
0
40
60
80
20
100
120
0.085
TJ = 25C
0.08
0.075
VGS = 10 V
0.07
15 V
0.065
0.06
2.5
VGS = 0 V
VGS = 10 V
ID = 26.5 A
10000
100
120
TJ = 125C
100C
1000
100
25C
10
0.5
25
0
50
100
25
75
125

Temperature
4644
40
60
80
100000
1.5
0
50
20

and Gate Voltage
I DSS, LEAKAGE (nA)

(NORMALIZED)

and Temperature

3
4
5
150
100
200
300
400
500

versus Voltage
MTE53N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
60000
100000
VDS = 0 V
VGS = 0 V
10000
40000
30000
TJ = 25C
Ciss
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
50000
TJ = 25C
VGS = 0 V
Crss
Ciss
20000
1000
100
Coss
Crss
Coss
10000
Crss
0
10
0
VGS
10
15
20
25
VDS
10
10
100
1000
4645
420
QT
10
350
VGS
Q1
280
210
Q2
ID = 53 A
TJ = 25C
140
70
2
0
VDS
Q3
0
100
200
300
400
0
500
10000
t, TIME (ns)
12
MTE53N50E
VDD = 250 V
ID = 53 A
VGS = 10 V
TJ = 25C
1000
td(off)
tr
tf
td(on)
100
10
1

10
100

SAFE OPERATING AREA

Data and Its Use.

(TJ(MAX) TC)/(RJC).
temperature.
60
50
VGS = 0 V
TJ = 25C
40
30
20
10
0
0.5
0.6
0.7
0.8
0.9
1.1
4646
MTE53N50E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
100

1000
100 s
1 ms
10
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
100
10
1
400
ID = 53 A
350
300
250
200
150
100
50
0
1000
25

Safe Operating Area

0.1
50
75
100
125
150

D = 0.5
0.2
0.1
0.05
0.02
0.01
CHIP
JUNCTION
0.01
0.0315
0.0318 F
0.001
0.1856
0.1239 F
0.0629
0.9536 F
SINGLE PULSE
0.0001
1.0E05
AMBIENT
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4647
MOTOROLA
Data Sheet
ISOTOP TMOS E-FET.
Designer's
MTE125N20E
TMOS POWER FET

125 AMPERES
200 VOLTS
RDS(on) = 0.015 OHM

4
1

Fast Recovery Diode
U.L. Recognized, File #E69369
3
2
D
SOT227B
1.
2.
3.
4.
Source
Gate
Drain
Source 2

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
200
Vdc
VDGR
200
Vdc
VGS
20
Vdc

ID
ID
IDM
125
79
500
Adc

Derate above 25C
PD
460
3.70
Watts
W/C
TJ, Tstg
40 to 150

(VDD = 50 Vdc, VGS = 10 Vdc, IL = 125 Apk, L = 0.05mH, RG = 25 )
EAS
mJ
400
VISO
2500
Vac

RJC
RJA
0.28
62.5
C/W
TL
260
REV 1
4648
MTE125N20E
Characteristic
Symbol
Min
Typ
Max
Unit
200
215
250
Vdc
mV/C
10
100
200
nAdc
2.0
3.0
4.0
Vdc
mV/C
12
15
mOhm
2.1
1.9
gFS
50
80
mhos
Ciss
14400
pF
Coss
3600
Crss
920
td(on)
72
tr
574
td(off)
327
tf
376
QT
510
Q1
100
Q2
245
Q3
158
1.00
1.00
1.5
trr
310
ta
220
tb
90
QRR
9.2
3.5
5.0
5.0
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 125 Adc)
(ID = 62.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 250 Vdc, ID = 125 Adc,

VGS = 10 Vdc
Vdc,
RG = 4.7 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 160 Vdc, ID = 125 Adc,

VGS =10 Vdc)
ns
nC


(IS = 125 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 125 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4649
MTE125N20E
210
160
TJ = 25C
VGS = 10 V
VDS 10 V
7V
8V
140
9V
6V
70
5V
120
80
100C
40
25C
4V
0
TJ = 55C
0
0
4
5
1
2
3
0.028
VGS = 10 V
0.024
TJ = 100C
0.02
25C
0.016
0.012
55C
0.008
0.004
0
40
80
120
160
200
0.02
TJ = 25C
0.018
VGS = 10 V
0.016
15 V
0.014
0.012
2.2
160
200
VGS = 0 V
TJ = 125C
10000
100C
1000
100
25C
10
0.6
25
25
75
0
50
100
125

Temperature
4650
80
120
100000
VGS = 10 V
ID = 62.5 A
1.4
0.2
50
40

and Gate Voltage
I DSS, LEAKAGE (nA)

(NORMALIZED)

and Temperature
1.8

5
4
6
150
50
100
150
200

versus Voltage
MTE125N20E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
60000
VDS = 0 V
TJ = 25C
VGS = 0 V
C, CAPACITANCE (pF)
Ciss
40000
Crss
Ciss
20000
Coss
Crss
0
10
0
VGS
10
15
20
25
VDS
4651
120
QT
10
100
VGS
Q1
80
Q2
60
ID = 62.5 A
TJ = 25C
40
20
2
0
Q3
60
120
VDS
180 240
300
360 420
480
0
540
1000
VDD = 250 V
tr
ID = 125 A
tf
VGS = 10 V
td(off)
TJ = 25C
t, TIME (ns)
12
MTE125N20E
100
td(on)
10
1
10

100

SAFE OPERATING AREA

Data and Its Use.

(TJ(MAX) TC)/(RJC).
temperature.
125
100
VGS = 0 V
TJ = 25C
75
50
25
0
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
4652
MTE125N20E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C

1000
100 s
100
1 ms
10
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
dc
100
10
1
400
ID = 125 A
350
300
250
200
150
100
50
0
1000

Safe Operating Area
25
50
75
100
125
150


1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
CHIP
JUNCTION
0.0174
0.1409
0.0 F
0.01
0.0994 F
0.1217
0.5750 F
AMBIENT
SINGLE PULSE
0.001
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4653
MOTOROLA
Data Sheet
ISOTOP TMOS E-FET.
Designer's
MTE215N10E
TMOS POWER FET

215 AMPERES
100 VOLTS
RDS(on) = 0.0055 OHM

4
1

Fast Recovery Diode
U. L. Recognized, File #E69369
3
2
D
SOT227B
1.
2.
3.
4.
Source
Gate
Drain
Source 2

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
VDGR
100
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
215
136
860
Adc

Derate above 25C
PD
460
3.70
Watts
W/C
TJ, Tstg
40 to 150

(VDD = 25 Vdc, VGS = 10 Vdc, IL = 215 Apk, L = 0.017 mH, RG = 25 ,)
EAS
mJ
VISO
2500
Vac

RJC
RJA
0.28
62.5
C/W
TL
260
400
REV 1
4654
MTE215N10E
Characteristic
Symbol
Min
Typ
Max
Unit
100
110
120
Vdc
mV/C
10
100
200
nAdc
2.0
3.0
4.0
Vdc
mV/C
4.6
5.5
mOhm
1.5
1.2
gFS
100
140
mhos
Ciss
15200
pF
Coss
6600
Crss
2400
td(on)
48
tr
490
td(off)
186
tf
384
QT
540
Q1
104
Q2
300
Q3
440
1.0
1.2
1.5
trr
145
ta
90
tb
55
QRR
4.6
3.5
5.0
5.0
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 215 Adc)
(ID = 107.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 50 Vdc, ID = 215 Adc,

VGS = 10 Vdc
Vdc,
RG = 5.0 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 80 Vdc, ID = 215 Adc,

VGS =10 Vdc)
ns
nC


(IS = 215 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 215 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

(Measured from the source lead 0.25 from package to source pad)
LS
nH
nH

4655
MTE215N10E
240
VGS = 10 V
9V
VDS 5 V
7V
8V
165
TJ = 25C
200
220
6V
110
5V
55
100C
160
25C
120
80
40
TJ = 55C
4V
0
0
0
0.5
1.5
2.5
1
2
3
3.5
0.018
VGS = 10 V
0.016
0.014
0.012
TJ = 100C
0.01
25C
0.008
55C
0.006
0.004
0
50
100
150
200
250
TJ = 25C
0.014
0.012
0.01
VGS = 10 V
0.008
15 V
0.006
100
150
200
250
100000
VGS = 0 V
VGS = 10 V
ID = 107.5 A
TJ = 125C
10000
1.2
100C
1000
0.8
100
25C
10
25
0
50
100
25
75
125

Temperature
4656
50

and Gate Voltage
I DSS, LEAKAGE (nA)

(NORMALIZED)
1.6
0.6
50
0.016

and Temperature
1.4
3
5
7
4
6

150
20
40
60
80
100

versus Voltage
MTE215N10E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
60000
VDS = 0 V
VGS = 0 V
TJ = 25C
50000
C, CAPACITANCE (pF)
Ciss
40000
30000
Crss
Ciss
20000
Coss
10000
Crss
0
10
0
VGS
10
15
20
25
VDS
4657
120
QT
10
100
80
Q1
VGS
Q2
60
6
4
40
ID = 215 A
TJ = 25C
2
0
VDS
Q3
200
400
600
800
1000
20
0
1200
1000
tr
tf
td(off)
t, TIME (ns)
12
MTE215N10E
100
td(on)
VDD = 50 V
ID = 215 A
VGS = 10 V
TJ = 25C
10
1

10
100

SAFE OPERATING AREA

Data and Its Use.
220
200
180

(TJ(MAX) TC)/(RJC).
temperature.
VGS = 0 V
TJ = 25C
160
140
120
100
80
60
40
20
0
0.5
0.7
0.9
1.1
1.3
1.5
1.7
4658
MTE215N10E
SAFE OPERATING AREA
1000
10 s
VGS = 20 V
SINGLE PULSE
TC = 25C
100 s
100
1 ms
10 ms
10
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
10
1
400
300
250
200
150
100
50
0
100

Safe Operating Area

0.1
ID = 215 A
350
25
50
75
100
125
150

D = 0.5
0.2
0.1
0.05
0.02
0.01
CHIP
JUNCTION
0.01
0.0307
0.0325 F
0.001
0.1127
0.1065 F
0.1366
0.6663 F
SINGLE PULSE
0.0001
1.0E05
AMBIENT
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4659
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP1N50E
TMOS POWER FET

1.0 AMPERES
500 VOLTS
RDS(on) = 5.0 OHM


Fast Recovery Diode
G
TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
1.0
0.8
3.0
Adc

Derate above 25C
PD
40
0.32
Watts
W/C
TJ, Tstg
55 to 150
EAS
45
mJ
RJC
RJA
3.13
62.5
TL
260

(VDD = 100 Vdc, VGS =10 Vdc, IL = 3.0 Apk, L =10 mH, RG = 25 )
Thermal Resistance
Junction to Case
Junction to Ambient, when surface mounted using minimum recommended pad size
Apk
C/W
REV 1
4660
MTP1N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
480
Vdc
mV/C
10
100
100
nAdc
2.0
3.2
6.0
4.0
Vdc
mV/C
4.3
5.0
Ohm
4.5
6.0
5.30
gFS
0.5
0.9
mhos
Ciss
215
315
pF
Coss
30.2
42
Crss
6.7
12
td(on)
8.0
20
tr
9.0
10
td(off)
14
30
tf
17
30
QT
7.4
9.0
Q1
1.6
Q2
3.8
Q3
0.81
0.68
1.2
trr
145
ta
85
tb
60
QRR
0.702
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125 C)
IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 1 .0 Adc)
(ID = 0.5 Adc, TJ = 125 C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
ns
nC


TJ = 125 C)

(See Figure
Fig re 14)
((IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4661
MTP1N50E
2.0
2.0
8V
6V
1.50
1.25
1.0
0.75
0.50
5V
0.25
0
10
1.25
1.0
0.75
0.50
TJ = 100C
25C
10
12
14
55C
0
2.0
16
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
1.75
2.0
VGS = 10 V
TJ = 100C
6
25C
4
55C
2
0.4
0.8
1.2
1.6
2.0
6.0
TJ = 25C
5.5
5.0
VGS = 10 V
4.5
15 V
4.0
3.5
3.0

and Temperature
2.5
0.25
0.50
0.75
1.25
1.0
1.50

and Gate Voltage
10000
VGS = 10 V
ID = 0.5 A
VGS = 0 V
2.0
TJ = 125C
1000

(NORMALIZED)
2.5
1.50
0.25
VDS 10 V
1.75
1.75
7V
VGS = 10 V
TJ = 25C
1.5
1.0
100C
100
25C
10
0.5
0
50
25
0
25
50
75
100
125

Temperature
4662
150
100
200
300
400
500

MTP1N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
500
VDS = 0 V
450
VGS = 0 V
1000
TJ = 25C
VGS = 0 V
TJ = 25C
Ciss
350
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
400
300
250
Ciss
200
150
100
Crss
0
10
100
Coss
10
Crss
Coss
Crss
50
Ciss
1
5
0
VGS
10
15
20
25
VDS
10
100
1000

Variation
4663
360
QT
10
300
VGS
Q1
Q2
240
180
4
2
Q3
0
120
ID = 1 A
TJ = 25C
60
VDS
4
0
8
100
VDD = 250 V
ID =1 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTP1N50E
tf
td(off)
td(on)
tr
10
10

100

1.0
VGS = 0 V
TJ = 25C
0.8
0.6
0.4
0.2
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78
0.82
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4664
temperature.
MTP1N50E
SAFE OPERATING AREA
50
VGS = 20 V
SINGLE PULSE
TC = 25C

10
10 s
1.0
100 s
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
ID = 1 A
40
30
20
10
0
1000
100
25
50
75
100
150
125

Safe Operating Area


1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E02
1.0E03
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t,TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4665
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP1N60E
TMOS POWER FET

1.0 AMPERES
600 VOLTS
RDS(on) = 8.0 OHM


Fast Recovery Diode

TO220AB
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
600
Vdc
VDGR
600
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
1.0
0.8
3.0
Adc

Derate above 25C
PD
50
0.4
Watts
W/C
TJ, Tstg
55 to 150

EAS
45
mJ

RJC
RJA
2.50
62.5
C/W
TL
260
Apk
REV 1
4666
MTP1N60E
Characteristic
Symbol
Min
Typ
Max
Unit
600
689
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.1
4.0
Vdc
mV/C
5.9
8.0
Ohm
6.4
9.6
8.4
gFS
0.5
0.8
mhos
Ciss
224
310
pF
Coss
27
40
Crss
6.0
10
td(on)
8.8
17.6
tr
6.8
13.6
td(off)
15
30
tf
20
40
QT
7.1
10
Q1
1.7
Q2
3.2
Q3
3.9
0.82
0.7
1.4
trr
464
ta
36
tb
428
QRR
0.629
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 300 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 300 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4667
MTP1N60E
TJ = 25C
1.6
6V
1.4
1.2
1
0.8
0.6
5V
0.4
0.2
1.6
1.2
0.8
0.4
TJ = 55C
10
12
14
16
18
2.8
3.2
3.6
4.4
4.8
5.2
5.6
TJ = 100C
10
8
25C
6
4
55C
2
0.2
0.4
0.8
1.2 1.4
0.6
1
1.6
1.8
6.4 6.8
9
TJ = 25C
8.5
8
7.5
7
VGS = 10 V
6.5
15 V
6
5.5
5
0.2
0.4
0.6
0.8
1
1.2 1.4
1.6
1.8

and Gate Voltage
2.4
1000
VGS = 0 V
VGS = 10 V
ID = 0.5 A
2.4
12
VGS = 10 V
14
20

and Temperature

(NORMALIZED)
25C
100C
4V
16
VDS 10 V
7V
1.8
VGS = 10 V
1.6
1.2
0.8
TJ = 125C
100C
100
10
25C
0.4
0
50
4668
25
25
50
75
100
125
150
100
200
300
400
500

Temperature

600
MTP1N60E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
500
VDS = 0 V
450
1000
TJ = 25C
VGS = 0 V
TJ = 25C
Ciss
400
350
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
VGS = 0 V
300
Ciss
250
Crss
200
150
100
100
10
Crss
0
10
0
VGS
10
15
20
25
VDS
Coss
Crss
Coss
50
Ciss
1
10
100
1000

Variation
4669
600
QT
10
500
VGS
400
Q1
Q2
300
ID = 1 A
TJ = 25C
200
4
2
100
Q3
VDS
3
100
VDD = 300 V
ID = 1 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTP1N60E
tf
td(off)
td(on)
10
tr
1
1
10


100

1
VGS = 0 V
TJ = 25C
0.8
0.6
0.4
0.2
0
0.5
0.54
0.58
0.62
0.66
0.7
0.74
0.78
0.82
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4670
temperature.
MTP1N60E
SAFE OPERATING AREA
50
VGS = 20 V
SINGLE PULSE
TC = 25C

10
10 s
100 s
1 ms
0.1
dc
10 ms
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.001
1
0.1
100
10
ID = 1 A
40
30
20
10
1000
25
50
75
100
150
125

Safe Operating Area


1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E05
t1
t2
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4671
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP1N80E

TMOS POWER FET

1.0 AMPERES
800 VOLTS
RDS(on) = 12 OHMS

Fast Recovery Diode
G
S

TO220AB

Symbol
Value
Unit
Rating
VDSS
800
Vdc
VDGR
800
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
1.0
0.8
4.0
Adc

Derate above 25C
PD
48
0.38
Watts
W/C
TJ, Tstg
55 to 150
Apk

EAS
mJ

Junction to Ambient
RJC
RJA
2.63
62.5
C/W
TL
260
20
4672
MTP1N80E
Characteristic
Symbol
Min
Typ
Max
Unit
800
0.981
10
100
100
2.0
3.3
6.3
4.0
mV/C
10.3
12
Ohm
11
14.4
12.6
gFS
0.4
1.4
mhos
Ciss
297
420
pF
Coss
29
40
Crss
6.0
10
td(on)
9.0
20
tr
10
20
td(off)
20
40
tf
27
50
QT
9.6
14
Q1
2.1
Q2
4.2
Q3
4.7
0.82
0.7
1.2
trr
317
ta
56
tb
261
QRR
0.98
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 1.0 Adc)
(VGS = 10 Vdc, ID = 0.5 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 400 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 400 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4673
MTP1N80E
2.0
TJ = 25C
1.6
2.0
VGS = 10 V
6V
8V
1.2
0.8
5V
0.4
VDS 10 V
1.6
1.2
0.8
TJ = 100C
0.4
25C
4V
0
10
15
0
2.0
20
55C
2.5
18
VGS = 10 V
15
100C
12
TJ = 25C
9
6
55C
3
0
0.25
0.50
0.75
1.0
1.25
1.50
1.75
2.0
16
TJ = 25C
15
14
13
12
VGS = 10 V
11
15 V
10
9
0
0.4
2.5
1.6
2.0
1000
VGS = 10 V
ID = 0.5 A
VGS = 0 V
TJ = 125C
2
100
1.5
0.5
25
0
25
50
75
100
125

Temperature
4674
0.8
1.2

and Gate Voltage

(NORMALIZED)

and Temperature
0
50
6.0

3.0
3.5
4.0
4.5
5.0
5.5
150
100C
10
25C
1
0.1
0
100
200
300
400
500
600
700
800

MTP1N80E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
700
600
500
400
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1000
TJ = 25C
VGS = 0 V
Ciss
300
200
TJ = 25C
VGS = 0
Ciss
100
Coss
10
Crss
Coss
100
0
Crss
0
10
15
20
25
10
100
1000
4675
400
QT
10
300
VGS
8
6
200
Q1
Q2
4
ID = 1 A
100
TJ = 25C
2
0
VDS
Q3
0
4
6
0
10
100
VDD = 400 V
ID = 1 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTP1N80E
tf
td(off)
10
tr
td(on)
1
1
10

100

1.0
VGS = 0 V
TJ = 25C
0.8
0.6
0.4
0.2
0
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4676
temperature.
MTP1N80E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
1
100 s
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
100
20

10
ID = 1 A
15
10
1000
25
50
75
100
125

(NORMALIZED)

Safe Operating Area
150

1
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
0.01
t1
t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4677
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP1N100E
TMOS POWER FET

1.0 AMPERES
1000 VOLTS
RDS(on) = 9.0 OHM


G
TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
1000
Vdc
VDGR
1000
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
1.0
0.8
3.0
Adc

Derate above 25C
PD
75
0.6
Watts
W/C
TJ, Tstg
55 to 150

EAS
45
mJ

RJC
RJA
1.67
62.5
C/W
TL
260
Apk
REV 2
4678
MTP1N100E
Characteristic
Symbol
Min
Typ
Max
Unit
1000
1.251
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
6.0
4.0
Vdc
mV/C
6.7
9.0
Ohm
4.86
9.0
9.9
gFS
0.9
1.32
mhos
Ciss
587
810
pF
Coss
59.6
120
Crss
12.2
25
td(on)
9.0
20
tr
12
25
td(off)
28
55
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 500 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
tf
34
70
QT
14.6
21
Q1
2.8
Q2
6.8
Q3
5.2
0.764
0.62
1.0
trr
655
ta
42
tb
613
QRR
0.957
3.5
4.5
7.5
ns
nC


(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125C)

(S Figure
Fi
(See
14)
((IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4679
MTP1N100E
2.0
2.0
TJ = 25C
1.4
5V
1.2
1.0
0.8
0.6
0.4
10
12
14
16
18
0.6
0.4
TJ = 55C
2.4
2.8
3.2
3.6
4.0
4.4
4.8
TJ = 100C
10
8
25C
6
4
55C
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
5.2
5.6
8.0
TJ = 25C
7.8
7.6
7.4
7.2
7.0
VGS = 10 V
6.8
6.6
15 V
6.4
6.2
6.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0
1.8

and Temperature

and Gate Voltage
10000
2.8
2.4
TJ = 125C
VGS = 10 V
ID = 0.5 A
1000
100C
2.0
1.6
1.2
0.8
0
50
100
10
1.0
25C
0.1
0.4
VGS = 0 V
0.01
25
0
25
50
75
100
125

Temperature
4680
25C
0.8
VGS = 10 V
1.0
12
1.2
16
14
1.4
0
2.0
20
100C
1.6
0.2
4V
0.2

(NORMALIZED)
6V
1.6
VDS 10 V
1.8
VGS = 10 V
1.8
150
100
200 300 400 500 600 700 800 900

1000

MTP1N100E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1200
1000
VGS = 0 V
Ciss VDS = 0 V
TJ = 25C
VGS = 0 V
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1000
800
Ciss
600
Crss
400
Ciss
TJ = 25C
100
Coss
10
Crss
Coss
200
0
10
Crss
0
5
VGS
1
5
10
15
20
25
VDS
10
100
1000

Variation
4681
12
1000
480
QT
10
VDD = 500 V
ID = 1 A
VGS = 10 V
TJ = 25C
400
320
VGS
Q1
Q2
240
ID = 1 A
TJ = 25C
4
2
VDS
0
0
tf
td(off)
0
4 5 6 7 8 9 10 11 12 13 14 15
tr
td(on)
10
160
80
Q3
100
t, TIME (ns)
MTP1N100E
1
1

10
100

1.0
VGS = 0 V
TJ = 25C
0.8
0.6
0.4
0.2
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4682
temperature.
MTP1N100E
SAFE OPERATING AREA
50
VGS = 20 V
SINGLE PULSE
TC = 25C
1.0
10 s
100 s
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
10
1.0
100
0.1
ID = 1 A

10
40
30
20
10
0
25
1000

Safe Operating Area
50
75
100
125
150


1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4683
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP2N40E
TMOS POWER FET

2.0 AMPERES
400 VOLTS
RDS(on) = 3.5 OHM


Fast Recovery Diode

TO220AB
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
400
Vdc
VDGR
400
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
2.0
1.5
6.0
Adc

Derate above 25C
PD
40
0.32
Watts
W/C
TJ, Tstg
55 to 150

EAS
45
mJ

RJC
RJA
3.13
62.5
C/W
TL
260
Apk
4684
MTP2N40E
Characteristic
Symbol
Min
Typ
Max
Unit
400
451
Vdc
mV/C
10
100
100
nAdc
2.0
3.2
7.0
4.0
Vdc
mV/C
3.1
3.5
Ohms
7.3
8.4
7.4
gFS
0.5
1.0
mhos
Ciss
229
320
pF
Coss
34
40
Crss
7.3
10
td(on)
8.0
16
tr
8.4
14
td(off)
12
26
tf
11
20
QT
8.6
12
Q1
2.6
Q2
3.2
Q3
5.0
0.88
0.76
1.2
trr
156
ta
99
tb
57
QRR
0.89
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 200 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 320 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4685
MTP2N40E
4
TJ = 25C
VGS = 10 V
3.2
8V
7V
2.4
6V
1.6
0.8
VDS 10 V
25C
100C
5V
TJ = 55C
0
0
4
12
16
20
8
VGS = 10 V
TJ = 100C
25C
55C
0
0
TJ = 25C
4.5
4
VGS = 10 V
3.5
15 V
3
2.5
0
0.5
1.5
2.5
3.5

and Temperature

and Gate Voltage
1000
2.5
2
VGS = 0 V
VGS = 10 V
ID = 1 A

(NORMALIZED)
1.5
TJ = 125C
100
0.5
0
50
4686
25
25
50
75
100
125
150
10
100
200
300

Temperature

400
MTP2N40E

The resistive switching time variation versus gate resistance (Figure 9. ) shows how typical switching performance
is affected by the parasitic circuit elements. If the parasitics
switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
500
VDS = 0 V
VGS = 0 V
1000
TJ = 25C
VGS = 0 V
TJ = 25C
Ciss
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
400
300
Ciss
200
Crss
Coss
10
Crss
Coss
100
0
10
100
Crss
5
0
VGS
10
15
20
25
VDS
1
10
100
1000
Figure 7. a. Capacitance Variation
Figure 7. b. High Voltage Capacitance

Variation
4687
400
QT
10
300
8
VGS
Q1
200
Q2
ID = 2 A
TJ = 25C
100
2
0
0
Q3
2
VDS
4
6
100
VDD = 200 V
ID = 2 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTP2N40E
td(off)
tf
tr
10
td(on)
1
1
10

100


2
VGS = 0 V
TJ = 25C
1.5
0.5
0
0.5
0.6
0.7
0.8
0.9
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4688
accompanying graph (Figure 12. ). Maximum energy at currents below rated continuous ID can safely be assumed to
MTP2N40E
SAFE OPERATING AREA
45
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100 s
1 ms
10 ms
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01

10
40
ID = 2 A
35
30
25
20
15
10
5
0
0.1
10
100
25
1000
50
75
100
125
150

Safe Operating Area


1
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
t1
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E01
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4689
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP2N50E
TMOS POWER FET

2.0 AMPERES
500 VOLTS
RDS(on) = 3.6 OHM


Fast Recovery Diode

TO220AB
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
2.0
1.6
6.0
Adc

Derate above 25C
PD
75
0.6
Watts
W/C
TJ, Tstg
55 to 150

EAS
61
mJ

Junction to Ambient
RJC
RJA
1.67
62.5
C/W
TL
260
Apk
REV 1
4690
MTP2N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
689
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.1
4.0
Vdc
mV/C
2.7
4.0
Ohm
5.9
9.6
8.4
gFS
1.0
1.6
mhos
Ciss
323
450
pF
Coss
45
60
Crss
9.0
20
td(on)
8.0
16
tr
6.0
12
td(off)
16
32
tf
10
20
QT
11
15
Q1
2.0
Q2
5.4
Q3
5.1
0.82
0.69
1.6
trr
334
ta
62
tb
272
QRR
0.985

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 250 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

4691
MTP2N50E
4
VGS = 10 V
8V
7V
VDS 10 V
3.5
6V
TJ = 25C
3
5V
1
TJ = 55C
25C
100C
3
2.5
2
1.5
1
0.5
10
12
14
16
18
3.5
TJ = 100C
5
4
25C
3
2
55C
1
0.4
0.8
1.6
2.4 2.8
1.2
2
3.2
3.6
5.5
6.5
3.6
4.2
TJ = 25C
3.8
3.4
VGS = 10 V
15 V
2.6
0.4
0.8
1.2 1.6
2
2.8
2.4
3.2
1000
VGS = 0 V
VGS = 10 V
ID = 2 A
1.6
1.2
0.8
4692
4.5

and Gate Voltage
0.4
50

and Temperature

(NORMALIZED)
VGS = 10 V
2.5
8
7
20
25
25
50
75
100
125
150
TJ = 125C
100
100C
25C
10
50
100
150
200
250
300
350
400

Temperature

450 500
MTP2N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
700
1000
VDS = 0 V
VGS = 0 V
TJ = 25C
600
VGS = 0 V
TJ = 25C
Ciss
500
400
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
Ciss
Ciss
300
Crss
200
100
Coss
10
Crss
Coss
100
0
10
Crss
5
0
VGS
10
15
20
25
VDS
1
10
100
1000

Variation
4693
450
16
400
14
350
12
300
QT
10
250
VGS
Q1
ID = 2 A
150
TJ = 25C
100
6
4
2
0
200
Q2
50
Q3
0
3
4
5
6
7
VDS
8
0
10
100
VDD = 250 V
ID = 2 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
18
MTP2N50E
td(off)
10
tf
td(on)
tr
1
1

10
100

2
VGS = 0 V
TJ = 25C
1.6
1.2
0.8
0.4
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4694
temperature.
MTP2N50E
SAFE OPERATING AREA
80
VGS = 20 V
SINGLE PULSE
TC = 25C

10
100 s
1 ms
10 ms
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
60
40
20
1000
100
ID = 2 A
25
50
75
100
125
150

Safe Operating Area


1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
t, TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Fifgure 14. Diode Reverse Recovery Waveform
4695
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP2N60E

TMOS POWER FET

2.0 AMPERES
600 VOLTS
RDS(on) = 3.8 OHMS

Fast Recovery Diode
G
S

TO220AB

Symbol
Value
Unit
Rating
VDSS
600
Vdc
VDGR
600
Vdc

VGS
20
40
Vdc

ID
IDM
2.0
9.0
Adc

Derate above 25C
PD
50
0.4
Watts
W/C
TJ, Tstg
55 to 150

(VDD = 50 Vdc, VGS = 10 Vdc, L = 95 mH, RG = 25 , Peak IL = 2.0 Adc)
EAS
190
mJ

Junction to Ambient
RJC
RJA
2.5
62.5
C/W
TL
260
REV 2
4696
MTP2N60E
Characteristic
Symbol
Min
Typ
Max
Unit
600
480
Vdc
mV/C
0.25
1.0
100
nAdc
100
nAdc
2.0
3.1
8.5
4.0
Vdc
mV/C
3.3
3.8
Ohm
8.2
8.4
gFS
1.0
mhos
Ciss
435
pF
Crss
Coss
56
9.2
td(on)
tr
12
21
td(off)
tf
30
24
QT
13
22
Q1
2.0
Q2
6.0
Q3
5.0
((IS = 2.0 Adc,, VGS = 0 Vdc))

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)
VSD
1.0
1.6
0.9

dIS/dt = 100 A/s)
trr
340
3.5
4.5
7.5
OFF CHARACTERISTICS
Temperature Coefficient (positive)
V(BR)DSS

GateBody Leakage Current Forward (VGSF = 20 Vdc, VDS = 0 Vdc)
GateBody Leakage Current Reverse (VGSR = 20 Vdc, VDS = 0 Vdc)
IDSS
IGSSF
IGSSR
mA
Temperature Coefficient (negative)
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 125C)
VDS(on)
Forward Transconductance (VDS 50 Vdc, ID = 1.0 Adc)
Vdc
Input Capacitance
Vd VGS = 0 Vdc,
Vd
(VDS = 25 Vdc,
f=1
1.0
0 MHz)

Output Capacitance
TurnOn Delay Time
Rise Time
((VDD = 300 Vdc,, ID = 2.0 Adc,,

VGS = 10 Vdc, Rg = 18 )
TurnOff Delay Time

Fall Time
Gate Charge
((VDS = 400 Vdc,, ID = 2.0 Adc,,

VGS = 10 Vdc)
ns
nC

Forward OnVoltage
Vdc
ns

(Measured from the drain 0.25 from package to center of die)
Ld

(Measured from the source pin 0.25 from package to source bond pad.)
Ls
nH

4697
MTP2N60E
TJ = 25C
VGS = 10 V
VDS 10 V
7V
3
6V
2
5.5 V
1
4
TJ = 100C
55C
25C
5V
0
12
16
20
2
4
6
8
12
100C
VGS = 10 V
8
TJ = 25C
4
55C
1.5
4.5
4.5
TJ = 25C
4.3
4.1
3.9
3.7
VGS = 10 V
3.5
3.3
15 V
3.1
2.9
2.7
2.5
0

and Temperature
0.5
1.5
2
2.5
3
3.5

and Gate Voltage
1000
2.5
VGS = 10 V
ID = 1 A
VGS = 0 V
TJ = 125C
2

(NORMALIZED)
10
1.5
100
100C
10
0.5
0
50
25
0
25
50
75
100
125

Temperature
4698
150
1
0
100
300
500
200
400
600

MTP2N60E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
800
700
VDS = 0 V
VGS = 0 V
Ciss
Ciss
500
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
600
400
Ciss
Crss
300
200
100
Coss
10
Crss
1
Coss
Crss
100
0
10
1000
TJ = 25C
10
15
20
25
0.1
TJ = 25C
VGS = 0
10
100
VGS
VDS

Variation
1000
4699
12
TJ = 25C
ID = 2 A
VDS
400
QT
9
6
VDS = 100 V
VDS = 250 V
VDS = 400 V
Q1
300
200
Q2
3
00
100
VGS
Q3
4
12
16
20
1000
TJ = 25C
ID = 2 A
VDS = 300 V
VGS = 10 V
100
td(off)
t, TIME (ns)
500
15
MTP2N60E
tf
tr
td(on)
10
1
1
10
100

1000


2.0
VGS = 0 V
TJ = 25C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
4700
temperature.
MTP2N60E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100 s
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
200

10
Peak IL = 2 A
VDD = 50 V
150
100
50
0
25
100
50
75
100
125
1000
150

(NORMALIZED)

Safe Operating Area

1
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
0.01
t1
t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4701
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP2P50E
TMOS POWER FET

2.0 AMPERES
500 VOLTS
RDS(on) = 6.0 OHM


Fast Recovery Diode

TO220AB
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
2.0
1.6
6.0
Adc

Derate above 25C
PD
75
0.6
Watts
W/C
TJ, Tstg
55 to 150

EAS
80
mJ

RJC
RJA
1.67
62.5
C/W
TL
260
Apk
REV 1
4702
MTP2P50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
564
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
4.0
4.0
Vdc
mV/C
4.5
6.0
Ohm
9.5
14.4
12.6
gFS
1.5
2.9
mhos
Ciss
845
1183
pF
Coss
100
140
Crss
26
52
td(on)
12
24
tr
14
28
td(off)
21
42
tf
19
38
QT
19
27
Q1
3.7
Q2
7.9
Q3
9.9
2.3
1.85
3.5
trr
223
ta
161
tb
62
QRR
1.92
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 250 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4703
MTP2P50E
4
3.5
VDS 10 V
7V
3.5
8V
VGS = 10 V
TJ = 25C
3
6V
2.5
2
1.5
5V
100C
TJ = 55C
2.5
25C
2
1.5
1
0.5
0.5
4V
0
12
20
16
24
4.5
5.5
6
25C
4
55C
2
0.5
2
2.5
1.5
3
3.5
6.5
6
TJ = 25C
5.75
5.5
5.25
5
VGS = 10 V
4.75
15 V
4.5
4.25
4

and Temperature
0.5
1.5
2.5
2
3
3.5

and Gate Voltage
1000
VGS = 0 V
VGS = 10 V
ID = 1 A
TJ = 125C
RDS(on), DRAIN-TO-SOURCE RESISTANCE

(NORMALIZED)
1.5
4704
3.5
TJ = 100C
0.5
50
2.5
VGS = 10 V
10
28
25
25
50
75
100
125
150
100
100C
10
25C
50
100
150
200
250
300
350
400

Temperature

450
500
MTP2P50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1600
C, CAPACITANCE (pF)
1400
VDS = 0 V
VGS = 0 V
1000
TJ = 25C
Ciss
C, CAPACITANCE (pF)
1800
1200
1000
Ciss
800
600
Crss
400
200
0
10
Ciss
100
Coss
10
Crss
Coss
Crss
5
VGS = 0 V
TJ = 25C
10
15
20
25
VGS
VDS
1
10
100
1000

Variation
4705
300
QT
10
250
VGS
200
Q1
Q2
150
ID = 2 A
TJ = 25C
100
50
Q3
VDS
6
10
12
14
16
18
0
20
1000
VDD = 250 V
ID = 2 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTP2P50E
100
td(off)
tf
tr
td(on)
10
1
10


100
2
VGS = 0 V
TJ = 25C
1.6
1.2
0.8
0.4
0
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4706
temperature.
MTP2P50E
SAFE OPERATING AREA
80
VGS = 20 V
SINGLE PULSE
TC = 25C

10
10 s
100 s
1 ms
dc
10 ms
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
60
40
20
1000
100
ID = 2 A
25
50
75
100
150
125

Safe Operating Area


1
D = 0.5
0.2
0.1
P(pk)
0.05
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
0.02
0.01
t1
SINGLE PULSE
0.01
1.0E05
1.0E04
t2
1.0E03
1.0E02
t, TIME (s)
1.0E01
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4707
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP3N50E

TMOS POWER FET

3.0 AMPERES
500 VOLTS
RDS(on) = 3.0 OHMS

Temperature
Zener Transient Suppressor Absorbs High Energy in the
Avalanche Mode
Fast Recovery Diode
G
S

TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc

GateSource Voltage Nonrepetitive (tp 50 s)
VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
3.0
10
Adc

Derate above 25C
PD
50
0.4
Watts
W/C
TJ, Tstg
65 to 150
WDSR (1)
mJ
WDSR (2)
210
33
5.0
RJC
RJA
2.5
62.5
C/W
TL
260

Single Pulse DraintoSource Avalanche Energy TJ = 25C
Repetitive Pulse DraintoSource Avalanche Energy
Junction to Ambient
(1) VDD = 50 V, ID = 3.0 A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
REV 1
4708
MTP3N50E
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
500
Vdc
0.25
1.0
OFF CHARACTERISTICS
(VGS = 0, ID = 0.25 mA)
(VDS = 500 V, VGS = 0)
(VDS = 400 V, VGS = 0, TJ = 125C)
IDSS
mAdc
IGSSF
100
nAdc
IGSSR
100
nAdc
2.0
1.5
4.0
3.5
2.4
3.0
10
8.0
gFS
1.0
mhos
Ciss
435
pF
Coss
56
Crss
9.2
td(on)
14
ON CHARACTERISTICS*
(TJ = 125C)
VGS(th)
RDS(on)

(ID = 3.0 A)
(ID = 1.5 A, TJ = 100C)
VDS(on)
Vdc
Ohm
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 V, ID 3.0 A,

RG = 18
, RL = 83 ,
VGS(on) = 10 V)
Fall Time
Total Gate Charge
GateSource Charge
(VDS = 400 V,
V ID = 3.0
3 0 A,
A
VGS = 10 V)
GateDrain Charge
ns
tr
14
td(off)
30
tf
20
Qg
15
21
Qgs
2.5
Qgd
10
VSD
1.5
Vdc
ton
**
ns
trr
200
3.5
4.5
7.5
nC

Forward OnVoltage
(IS = 3.0 A)
Forward TurnOn Time

(IS = 3.0
3 0 A,
A di/dt = 100 A/s)

(Measured from the contact screw on tab to center of die)
Ld

Ls
nH
* Indicates Pulse Test: Pulse Width = 300 s Max, Duty Cycle 2.0%.
** Limited by circuit inductance.
4709
MTP3N50E
6
TJ = 25C
VGS = 10 V
7V
4
6V
3
2
1
5V
4V
0
0
8
12
16
6
10
14
18
20
VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED)
1.2
0.9
0.8
50
VDS 10 V
4
2
100C
25C
TJ = 55C
0
2
4
6

(NORMALIZED)
6
TJ = 100C
4
25C
2
55C
0
3
VGS = 0
ID = 250 A
1.1
0.9
0.8
50
50
100
150
2.5
VGS = 10 V
ID = 1.5 A
1.5
0.5
50
25
25
50
75
100
125
Figure 6. OnResistance versus Temperature
4710
150

With Temperature
VGS = 10 V
125
0
25
50
75
100
1.2
25

With Temperature
VBR(DSS), DRAINTOSOURCE BREAKDOWN VOLTAGE
(NORMALIZED)
VDS = VGS
ID = 0.25 mA
1.1
150
MTP3N50E
16
1 s
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
10
100 s
1 ms
0.1
0.01
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
12
8
TJ 150C
4
0
100
10
1000
600
500
100
200
300
400

Safe Operating Area

Safe Operating Area

1000

t, TIME (ns)
100
td(on)
tr
1
1

one microsecond.

td(off)
tf
10
1
0.7
0.5
VDD = 250 V
ID = 3 A
VGS = 10 V
TJ = 25C
1000
10
100

D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.03
0.02
P(pk)
0.05
0.02
t1
0.01
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
t2
0.1
0.2 0.3
0.5
10
20
30
RJC(t) = r(t) RJC

RJC = 2.5C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
50
100
200 300
500
1000
t, TIME (ms)

4711
MTP3N50E
The Commutating Safe Operating Area (CSOA) of
Figure 12 defines the limits of safe operation for commutated
source-drain current versus re-applied drain voltage when
the source-drain diode has undergone forward bias. The
curve shows the limitations of IFM and peak VR for a given
commutation speed. It is applicable when waveforms similar
to those of Figure 11 are present. Full or half-bridge PWM DC
motor controllers are common applications requiring CSOA
data.
The time interval tfrr is the speed of the commutation cycle.
Device stresses increase with commutation speed, so tfrr is
specified with a minimum value. Faster commutation speeds
require an appropriate derating of IFM, peak VR or both. Ultimately, tfrr is limited primarily by device, package, and circuit
impedances. Maximum device stress occurs during trr as the
diode goes from conduction to reverse blocking.
VDS(pk) is the peak draintosource voltage that the device
must sustain during commutation; IFM is the maximum forward source-drain diode current just prior to the onset of
commutation.
VR is specified at 80% of V(BR)DSS to ensure that the
CSOA stress is maximized as IS decays from IRM to zero.
RGS should be minimized during commutation. TJ has only
a second order effect on CSOA.
Stray inductances, Li in Motorolas test circuit are assumed
to be practical minimums.
15 V
VGS
0
IFM
dls/dt
90%
IS
10%
trr
ton
IRM
0.25 IRM
VDS(pk)
VR
VDS
dVDS/dt
VdsL
Vf
MAX. CSOA
STRESS AREA

RGS
DUT
VR
4
IFM
IS
Li
VDS
+
3
20 V
VGS
2
VR = 80% OF RATED VDS

VdsL = Vf + Li dls/dt
di/dt 50 A/s
1

Test Circuit
500
100
200
300
400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
600
V(BR)DSS
Vds(t)

IO
L
VDS
ID
ID(t)
C
4700 F
250 V
VDD
t
RGS
50

Test Circuit
4712
VDD
WDSR
t, (TIME)
tP
1 LI 2
O
2
V(BR)DSS
V(BR)DSS VDD

Waveforms
1000
TJ = 25C
VGS = 0
C, CAPACITANCE (pF)
800
600
Ciss
400
Crss
200
Coss
VDS = 0
0
5
5
15
0
10
20
25
VGS
VDS
10
MTP3N50E
16
VDS = 100 V
250 V
TJ = 25C
ID = 3 A
12
400 V
8
10
15
25

+18 V
VDD
1 mA
47 k
Vin
20
10 V
15 V
SAME
DEVICE TYPE
AS DUT
100 k
2N3904
0.1 F
2N3904
100 k
47 k
100
FERRITE
BEAD
DUT
Vin = 15 Vpk; PULSE WIDTH 100 s, DUTY CYCLE 10%
4713
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP3N60E
TMOS POWER FET

3.0 AMPERES
600 VOLTS
RDS(on) = 2.2 OHMS


Temperature
Avalanche Mode
Fast Recovery Diode
G
S

TO-220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
600
Vdc
VDGR
600
Vdc

GateSource Voltage Nonrepetitive
VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
3.0
14
Adc

Derate above 25C
PD
75
0.6
Watts
W/C
TJ, Tstg
55 to 150
WDSR(1)
mJ
WDSR(2)
290
46
7.5
RJC
RJA
1.67
62.5
C/W
TL
260

(1) VDD = 50 V, ID = 3.0 A
REV 1
4714
MTP3N60E
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
600
Vdc
0.25
1.0
OFF CHARACTERISTICS
(VGS = 0, ID = 250 Adc)
(VDS = 600 V, VGS = 0)
(VDS = 480 V, VGS = 0, TJ = 125C)
IDSS
mAdc
GateBody Leakage Current Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
100
nAdc
GateBody Leakage Current Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
100
nAdc
2.0
1.5
4.0
3.5
2.1
2.2
9.0
7.5
gFS
1.5
mhos
Ciss
770
pF
Coss
105
Crss
19
td(on)
23
ON CHARACTERISTICS*
(TJ = 125C)
VGS(th)
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.5 A)
RDS(on)

(ID = 3.0 A)
(ID = 1.5 A, TJ = 100C)
VDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 A)
Vdc
Ohms
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 300 V, ID 3.0 A,

RL = 100 ,
RG = 12
,
VGS(on) = 10 V)
Fall Time
Total Gate Charge
GateSource Charge
(VDS = 420 V,
V ID = 3.0
3 0 A,
A
VGS = 10 V)
GateDrain Charge
ns
tr
34
td(off)
58
tf
35
Qg
28
31
Qgs
5.0
Qgd
17
VSD
1.4
Vdc
ton
**
ns
trr
400
3.5
4.5
7.5
nC

Forward OnVoltage
Forward TurnOn Time
(IS = 3.0 A, di/dt = 100 A/s)

Ld

Ls
nH
* Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

4715
MTP3N60E
VGS = 10 V
7V
4
6V
2
5V
0
0
8
12
16
6
10
14
18
20
1.2
0.9
0.8
0.7
50
10
VDS 10 V
4
100C
2
TJ = 25C
55C
2
4
6
3
5
7

(NORMALIZED)
100C
TJ = 25C
2
55C
0
4
1.1
VGS = 0
ID = 250 A
0.9
0.8
50
25
25
50
75
100
125
150
10
3
VGS = 10 V
ID = 2 A
2
0
50
25
25
50
75
100
125

With Temperature
4716
150

With Temperature
125
0
25
50
75
100
1.2
VGS = 10 V
25

With Temperature
(NORMALIZED)
VDS = VGS
ID = 0.25 mA
1.1
150
MTP3N60E
16
VGS = 20 V
SINGLE PULSE
TC = 25C
100
10 s
10
100 s
10 ms
1 ms
dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
8
TJ 150C
4
100
10
12
1000
600
200
400

Safe Operating Area
800

Safe Operating Area
be less than:

TJ(max) TC
RJC
10000
VDD = 300 V
ID = 3 A
VGS(on) = 10 V
TJ = 25C
t, TIME (ns)
1000
td(off)
tf
td(on)
100
tr

one microsecond.
10
1
1000
10
100


1
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.1
0.05
P(pk)
0.05
0.02
t1
0.03
t2
0.01
0.02
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
10
20
RJC(t) = r(t) RJC

RJC = 1.67C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
50
100
200
500
1k
t, TIME (ms)

4717
MTP3N60E
The Commutating Safe Operating Area (CSOA) of Figure
12 defines the limits of safe operation for commutated
data.
commutation.
15 V
VGS
0
IFM
dlS/dt
90%
IS
10%
trr
ton
IRM
0.25 IRM
tfrr
VDS(pk)
VR
VDS
VdsL
Vf
MAX. CSOA
STRESS AREA

RGS
DUT
VR
IFM
IS
Li
VDS
+
3
20 V
VGS
2

di/dt 60 A/s
1

Test Circuit
0
200
400
600
800
V(BR)DSS
Vds(t)

IO
L
VDS
ID
ID(t)
C
4700 F
250 V
VDD
t
RGS
50

Test Circuit
4718
VDD
WDSR
t, (TIME)
tP
1 LI 2
O
2
V(BR)DSS
V(BR)DSS VDD

Waveforms
MTP3N60E
TJ = 25C
1400
VGS = 0 V
1200
C, CAPACITANCE (pF)
1600
1000
Ciss
Crss
800
600
400
200
0
10
VDS = 0 V
Coss
5
10
20
15
25
16
VDS = 100 V
TJ = 25C
ID = 3 A
12
250 V
420 V
15
25
10
20
30
VGS
VDS
40

+18 V
VDD
1 mA
Vin
35
10 V
15 V
SAME
DEVICE TYPE
AS DUT
100 k
2N3904
0.1 F
2N3904
100 k
47 k
100
FERRITE
BEAD
DUT
4719
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP3N100E
TMOS POWER FET

3.0 AMPERES
1000 VOLTS
RDS(on) = 4.0 OHM


G
TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
1000
Vdc
VDGR
1000
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
3.0
2.4
9.0
Adc

Derate above 25C
PD
125
1.0
Watts
W/C
Apk
TJ, Tstg
55 to 150

EAS
245
mJ

RJC
RJA
1.00
62.5
C/W
TL
260
REV 3
4720
MTP3N100E
Characteristic
Symbol
Min
Typ
Max
Unit
1000
1.23
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
6.0
4.0
Vdc
mV/C
2.96
4.0
Ohm
4.97
12
10
gFS
2.0
3.56
mhos
Ciss
1316
1800
pF
Coss
117
260
Crss
26
75
td(on)
13
25
tr
19
40
td(off)
42
90
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 400 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
tf
33
55
QT
32.5
45
Q1
6.0
Q2
14.6
Q3
13.5
0.794
0.63
1.1
trr
615
ta
104
tb
511
QRR
2.92
3.5
4.5
7.5
ns
nC


(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125C)

Fig re 14)
(See Figure
((IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4721
MTP3N100E
6
6
5
VGS = 10 V
6V
VDS 10 V
5V
3
2
100C
TJ = 25C
4
25C
3
2
TJ = 55C
1
4V
0
6
8
10
12
14
16
18
0
2.0
20
2.4
6
TJ = 100C
4
25C
3
2
55C
1
1.0
1.5
2.0
2.5 3.0
3.5 4.0
4.5
5.0
5.5
6.0
4.8
5.2
5.6
6.0
5.5
6.0
TJ = 25C
3.6
VGS = 10 V
3.4
3.2
15 V
3.0
2.8
1.0
1.5
2.0
2.5 3.0 3.5 4.0 4.5

5.0

and Gate Voltage
TJ = 125C
10000

(NORMALIZED)
4.4
VGS = 0 V
VGS = 10 V
ID = 1.5 A
100C
1000
1.6
1.2
100
25C
10
0.8
1
25
0
25
50
75
100
125

Temperature
4722
4.0
100000
2.4
0.4
50
3.6
3.8

and Temperature
2.0
3.2

VGS = 10 V
2.8
150
100
200 300 400 500 600 700 800 900 1000


MTP3N100E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2800
10000
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25C
Ciss
1000
C, CAPACITANCE (pF)
2000
C, CAPACITANCE (pF)
TJ = 25C
VGS = 0 V
2400
Ciss
1600
Crss
1200
800
Coss
400
100
Coss
Crss
10
Crss
0
10
1
5
0
VGS
10
15
20
VDS
25
10
100
1000

Variation
4723
400
14
350
QT
12
300
250
10
8
Q1
Q2
150
ID = 3 A
TJ = 25C
4
2
0
200
VGS
50
Q3
0
100
VDS
8
24
12
16
20
28
0
30
1000
VDD = 500 V
ID = 3 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
16
MTP3N100E
100
10
td(off)
tf
tr
td(on)
1
10

100


3.0
VGS = 0 V
TJ = 25C
2.5
2.0
1.5
1.0
0.5
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78 0.80
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4724
temperature.
MTP3N100E
SAFE OPERATING AREA
250
VGS = 20 V
SINGLE PULSE
TC = 25C
VAS, SINGLE PULSE DRAINTOSOURCE

100
10
10 s
1.0
100 s
1 ms
10 ms
0.1
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
dc
1.0
10
100
ID = 3 A
200
150
100
50
0
25
1000

Safe Operating Area
150
50
75
100
125


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
0.01
1.0E05
t2
0.01
SINGLE PULSE
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4725
MOTOROLA
Designer's Data Sheet
MTP3N120E
TMOS E-FET.
TMOS POWER FET

3.0 AMPERES
1200 VOLTS
RDS(on) = 5.0 OHM
This advanced highvoltage TMOS EFET is designed to

controls, and other inductive loads, the avalanche energy capability

Temperature
Avalanche Mode
SourcetoDrain Diode Recovery Time Comparable to
* See App. Note AN1327 Very Wide Input Voltage Range;

Offline Flyback Switching Power Supply

TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
1200
Vdc
VDGR
1200
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
3.0
2.2
11
Adc

Derate above 25C
PD
125
1.0
Watts
W/C
TJ, Tstg
55 to 150
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS (TJ

(VDD = 100 Vdc, VGS = 10 Vdc, PEAK IL = 4.5 Apk, L = 10 mH, RG = 25 )
t150C)
EAS
Apk
mJ
101
RJC
RJA
1.0
62.5
C/W
TL
260
REV 1
4726
MTP3N120E
Characteristic
Symbol
Min
Typ
Max
Unit
1200
1.28
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.1
4.0
Vdc
mV/C
4.0
5.0
Ohm
18.0
15.8
gFS
2.5
3.1
mhos
Ciss
2130
2980
pF
Coss
1710
2390
Crss
932
1860
td(on)
13.6
30
tr
12.6
30
td(off)
35.8
70
tf
20.7
40
QT
31
40
Q1
8.0
Q2
11
Q3
14
0.80
0.65
1.0
trr
394
ta
118
tb
276
QRR
2.11
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 600 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 600 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH

4727
MTP3N120E
6
VDS 10 V
VGS = 10 V
TJ = 25C
6V
4
3
2
5V
5
4
100C
3
2
25C
1
TJ = 55C
4V
0
12
18
24
30
3.0
3.4
3.8
4.2
5.0
5.4
5.8
TJ = 100C
25C
55C
VGS = 10 V
6.2
5.4
TJ = 25C
5.0
VGS = 10 V
4.6
15 V
4.2
3.8

and Temperature

and Gate Voltage
2.5
2.0
10,000
VGS = 0 V
VGS = 10 V
ID = 1.5 A
TJ = 125C
1,000
1.5
1.0
0.5
0
50
4728
4.6

(NORMALIZED)
25
25
50
75
100
125
150
100C
100
25C
10
200
400
600
800
1000

Temperature

1200
MTP3N120E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2800
10,000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
Ciss
2000
Crss
1600
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
2400
TJ = 25C
VGS = 0 V
Ciss
1200
800
Coss
1,000
Coss
100
Crss
400
Crss
0
10
0
VGS
10
15
20
VDS
25
10
10
100
1000

Variation
4729
MTP3N120E
350
12
300
QT
10
250
200
8
Q2
Q1
VGS
150
ID = 3 A
TJ = 25C
4
2
0
50
VDS
Q3
8
12
16
100
24
20
28
0
32
1000
t, TIME (ns)
14
400
16
VDD = 600 V
ID = 3 A
VGS = 10 V
TJ = 25C
100
td(off)
tf
td(on)
tr
10
10


100
3.0
VGS = 0 V
TJ = 25C
2.4
1.8
1.2
0.6
0
0.55
0.59
0.63
0.67
0.71
0.75
0.79
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4730
temperature.
MTP3N120E
SAFE OPERATING AREA
120
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
10 s
100 s
1.0
1 ms
0.1
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
100
1,000
ID = 3 A
100
80
60
40
20
0
10,000
25
50
75
100
125
150

Safe Operating Area


1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
t2
1.0E03
1.0E01
1.0E02
t, TIME (s)
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4731
MTP3N120E
D1 D4
1N4007s
L1
H1
90VAC
600VAC
C1
0.1
1 kV
C4
0.1
1 kV
L1
+Vin
H2
C3
0.0047
3 kV
C2
0.0047
3 kV
EARTH
GND
C6
100 mF
450 V
C5
100 mF
450 V
R4
470 k
1/2 W
R3
470 k
1/2 W
R2
470 k
1/2 W
R1
470 k
1/2 W
INPUT GND
Figure 15. The AC Input/Filter Circuit Section
T1
C11
D8
100 mF
MBR370 10 V
+Vin
R9
R8
100 mF
20 V
D9
MUR430
Vaux
82 k, 1/2 W
R7
R6
R5
R16
100 k
1/2 W
10 mF
25 V
+
D10
+
C13
C9
LL
MUR1100
4
C7
220 pF
1
U2
1/2
MOC8102
R12 10 W
R15
680 W
C8
1000 pF
+5 V
C14
U2
MOC8102
D6
D7
U3
TL431
Q1
R13
1k
R20
120 W
C15
1.5 nF
R19
32.4 k
1.3 mF 7.5 k
C17
2.2 nF
MTP3N120E
UC3845BN
D5
3.3 V
C12
Vaux
7
R10
27 k
MUR130
C10
R11
1.8 k
1 nF
3 kV
+12 V
C16 R17
R21
2.49 k
GND
R14
1.2 W
1/2 W
INPUT GND
Figure 16. The DC/DC Converter Circuit Section
4732
MOTOROLA
Product Preview
MTP4N40E
TMOS E-FET.

Fast Recovery Diode
TMOS POWER FET

4.0 AMPERES
400 VOLTS
RDS(on) = 1.8 OHM
G
S

TO220AB

Rating
Symbol
Value
Unit
VDSS
400
Vdc
VDGR
400
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
4.0
2.9
12
Adc

Derate above 25C
PD
74
0.6
Watts
W/C
TJ, Tstg
55 to 150
Apk

(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 8.0 Apk, L = TBD mH, RG = 25 )
EAS

Junction to Ambient
RJC
RJA
1.67
62.5
C/W
TL
260
mJ
TBD
REV 1
4733
MTP4N40E
Characteristic
Symbol
Min
Typ
Max
Unit
400
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
4.0
Vdc
mV/C
1.8
Ohms
12
10
gFS
TBD
TBD
mhos
Ciss
TBD
TBD
pF
Coss
TBD
TBD
Crss
TBD
TBD
td(on)
TBD
TBD
tr
TBD
TBD
td(off)
TBD
TBD
tf
TBD
TBD
QT
TBD
80
Q1
TBD
Q2
TBD
Q3
TBD
TBD
TBD
TBD
trr
TBD
ta
TBD
tb
TBD
QRR
TBD
TBD
TBD
TBD
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 4.0 Adc)
(ID = 2.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 200 Vdc, ID = 4.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 320 Vdc, ID = 4.0 Adc,

VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4734
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP4N50E
TMOS POWER FET

4.0 AMPERES
500 VOLTS
RDS(on) = 1.5 OHMS

Temperature
Avalanche Mode
Fast Recovery Diode
G
S

TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
4.0
10
Adc

Derate above 25C
PD
75
0.6
Watts
W/C
TJ, Tstg
55 to 150
WDSR (1)
mJ
WDSR (2)
280
44
7.4
RJC
RJA
1.67
62.5
C/W
TL
260

(1) VDD = 50 V, ID = 4.0 A
REV 1
4735
MTP4N50E
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
500
Vdc
0.25
1.0
OFF CHARACTERISTICS
(VGS = 0, ID = 250 Adc)
(VDS = 500 V, VGS = 0)
(VDS = 400 V, VGS = 0, TJ = 125C)
IDSS
mAdc
IGSSF
100
nAdc
IGSSR
100
nAdc
2.0
1.5
4.0
3.5
1.3
1.5
7.5
6.0
gFS
1.5
mhos
Ciss
775
pF
Coss
84
Crss
19
td(on)
24
ON CHARACTERISTICS*
(TJ = 125C)
VGS(th)
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 2.0 A)
RDS(on)

(ID = 4.0 Adc)
(ID = 2.0 A, TJ = 100C)
VDS(on)
Vdc
Ohm
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 V, ID 4.0 A,

RG = 12
, RL = 62 ,
VGS(on) = 10 V)
Fall Time
Total Gate Charge
GateSource Charge
(VDS = 400 V,
V ID = 4.0
4 0 A,
A
VGS = 10 V)
GateDrain Charge
ns
tr
34
td(off)
60
tf
36
Qg
27
32
Qgs
3.5
Qgd
14
VSD
1.4
Vdc
ton
**
ns
trr
760
3.5
4.5
7.5
nC

Forward OnVoltage
Forward TurnOn Time
(IS = 4.0 A, di/dt = 100 A/s)

Ld

Ls
nH
4736
MTP4N50E
TJ = 25C
VGS = 10 V
8V
7V
6V
5V
4V
4
8
12
16
20
1.2
0.9
0.8
50
VBR(DSS), DRAINTOSOURCE BREAKDOWN

VOLTAGE (NORMALIZED)
VDS 10 V
6
2
25C
55C
0
2
4
6
8
10
1.1
2
1.6
25C
1.2
0.8
55C
0
4
VGS = 0
ID = 0.25 mA
0.9
0.8
50

(NORMALIZED)
TJ = 100C
150
50
100
150
200

With Temperature
VGS = 10 V
125
2.8
0.4
0
25
50
75
100
1.2
2.4
25
Figure 2. GateToSource Threshold Voltage

Variation With Temperature
TJ = 100C
VDS = VGS
ID = 0.25 mA
1.1
10
2.5
VGS = 10 V
ID = 2 A
1.5
0.5
0
50
50
100
150

With Temperature
200
4737
MTP4N50E
10 s
12
0.1 ms
VGS = 20 V
SINGLE PULSE
TC = 25C
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
14
10
10
8
6
TJ 150C
4
2
dc
0
1
10
100
1000
100
200
300
400
500

Safe Operating Area
600

Safe Operating Area


be less than:
TJ(max) TC
RJC
10000
VDD = 250 V
ID = 4 A
VGS = 10 V
TJ = 25C
1000
td(off)
tf
tr
t, TIME (ns)
td(on)
100

one microsecond.
10
1
1000
10
100


1
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
0.02
t1
0.03
0.02
t2
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
2
5
t, TIME (ms)
10
20
RJC(t) = r(t) RJC

RJC = 1.67C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
50
100
200
500
1000
4738
MTP4N50E
2000
16
TJ = 25C
VGS = 0
C, CAPACITANCE (pF)
1500
1000
Crss
Ciss
500
VDS = 0
0
Coss
TJ = 25C
ID = 4 A
VDS = 100 V
12
250 V
400 V
10
5
5
10
20
25
0
15
VGS
VDS
10
20
30
40
50


sourcedrain current versus reapplied drain voltage when
the sourcedrain diode has undergone forward bias. The
curve shows the limitations of IFM and peak VDS for a given
rate of change of source current. It is applicable when waveforms similar to those of Figure 13 are present. Full or half
bridge PWM DC motor controllers are common applications
requiring CSOA data.
Device stresses increase with increasing rate of change of
source current so dIs/dt is specified with a maximum value.
Higher values of dIs/dt require an appropriate derating of IFM,
peak VDS or both. Ultimately dIs/dt is limited primarily by device, package, and circuit impedances. Maximum device
stress occurs during trr as the diode goes from conduction to
reverse blocking.
must sustain during commutation; IFM is the maximum forward sourcedrain diode current just prior to the onset of
commutation.
Stray inductances in Motorolas test circuit are assumed to

be practical minimums. dVDS/dt in excess of 10 V/ns was attained with dIs/dt of 400 A/s.
15 V
VGS
0
IFM
dls/dt
90%
IS
10%
trr
ton
IRM
0.25 IRM
VDS(pk)
VR
VDS
dVDS/dt
VdsL
Vf
MAX. CSOA
STRESS AREA

6
RGS
DUT
VR
+
di/dt 75 A/s
IS
+
VGS
0
IFM
100
200
300
400
500
600
Li
VDS
20 V


Test Circuit
4739
MTP4N50E
V(BR)DSS
Vds(t)
IO
L
VDS
ID(t)
C
4700 F
250 V
ID
VDD
VDD
WDSR

Test Circuit
t, (TIME)
tP
RGS
50
1 LI 2
O
2
V(BR)DSS
V(BR)DSS VDD

Waveforms
RESISTIVE SWITCHING
VDD
ton
td(on)
RL
Vout
Vin
PULSE GENERATOR
Rgen
50
tf
90%
OUTPUT, Vout
INVERTED
10%
90%
50
INPUT, Vin
50%
50%
10%
PULSE WIDTH
* Note: The Mirror is shorted to the Kelvin terminal for this test.
+18 V
VDD
1 mA
47 k
Vin
td(off)
tr
90%
DUT
z = 12
toff
10 V
15 V
SAME
DEVICE TYPE
AS DUT
100 k
2N3904
0.1 F
2N3904
100 k
47 k
100
FERRITE
BEAD
DUT
4740
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP4N80E
TMOS POWER FET

4.0 AMPERES
800 VOLTS
RDS(on) = 3.0 OHM


G
TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
800
Vdc
VDGR
800
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
4.0
2.9
12
Adc

Derate above 25C
PD
125
1.0
Watts
W/C
Apk
TJ, Tstg
55 to 150

EAS
320
mJ

RJC
RJA
1.0
63
C/W
TL
260
REV 3
4741
MTP4N80E
Characteristic
Symbol
Min
Typ
Max
Unit
800
1.02
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
1.95
3.0
Ohm
8.24
12
10
gFS
2.0
4.3
mhos
Ciss
1320
2030
pF
Coss
187
400
Crss
72
160
td(on)
13
30
tr
36
90
td(off)
40
80
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 4.0 Adc)
(ID = 2.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 400 Vdc, ID = 4.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 4.0 Adc,
VGS = 10 Vdc)
tf
30
75
QT
36
80
Q1
7.0
Q2
16.5
Q3
12
0.812
0.7
1.5
trr
557
ta
100
tb
457
QRR
2.33
3.5
4.5
7.5
ns
nC


(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125C)

Fig re 14)
(See Figure
((IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4742
MTP4N80E
8
TJ = 25C
VGS = 10 V
6V
5
5V
4
3
2
1
0
6
5
100C
4
25C
3
2
TJ = 55C
4V
0
VDS 10 V
6
8
10
12
14
16
18
0
2.0
20
2.4
2.8
3.2
3.6
4.0
4.4
4.8
5.2
4.6
VGS = 10 V
3.8
TJ = 100C
3.0
25C
2.2
1.4
55C
0.6
1
3
5
4
6
2.6
TJ = 25C
2.5
2.4
2.3
2.2
VGS = 10 V
2.1
2.0
15 V
1.9
1.8
1
3
4
5
6

and Gate Voltage
10000
2.2
VGS = 10 V
ID = 2 A
VGS = 0 V
TJ = 125C
1000

(NORMALIZED)

and Temperature
1.8
5.6
1.4
1.0
100C
100
25C
10
0.6
0.2
50
1
25
0
25
50
75
100
125
150

Temperature
100
300
500
600
200
400
700
800

4743
MTP4N80E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2800
10000
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25C
TJ = 25C
VGS = 0 V
2400
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1000
2000
Ciss
1600
Crss
1200
800
Coss
400
100
Coss
Crss
10
Crss
0
10
1
0
5
VGS
10
15
20
VDS
4744
25
10
100
1000

Variation
10
500
QT
1000
VDD = 400 V
ID = 4 A
VGS = 10 V
TJ = 25C
VGS
Q1
Q2
300
200
ID = 4 A
TJ = 25C
VDS
24
12
18
30
100
tf
td(off)
100
2
Q3
t, TIME (ns)
400
MTP4N80E
0
36
10
tr
td(on)
1
10

100


4.0
3.6
3.2
VGS = 0 V
TJ = 25C
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78
0.82
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4745
MTP4N80E
SAFE OPERATING AREA
350
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
10 s
100 s
1.0
1 ms
10 ms
0.1
0.01
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1.0
10
100
ID = 4 A
300
250
200
150
100
50
0
25
1000

Safe Operating Area
50
75
100
125
150


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
t2
0.01
0.01
1.0E05
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
SINGLE PULSE
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4746
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP5N40E
TMOS POWER FET

5.0 AMPERES
400 VOLTS
RDS(on) = 1.0 OHM

Temperature
Avalanche Mode
Fast Recovery Diode
G
S

TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
400
Vdc
VDGR
400
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
5.0
12
Adc

Derate above 25C
PD
75
0.6
Watts
W/C
TJ, Tstg
55 to 150
WDSR (1)
mJ
WDSR (2)
290
46
7.4
RJC
RJA
1.67
62.5
C/W
TL
260

(1) VDD = 50 V, ID = 5.0 A
REV 1
4747
MTP5N40E
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
400
Vdc
0.25
1.0
OFF CHARACTERISTICS
(VGS = 0, ID = 250 Adc)
(VDS = 400 V, VGS = 0)
(VDS = 320 V, VGS = 0, TJ = 125C)
IDSS
mAdc
IGSSF
100
nAdc
IGSSR
100
nAdc
2.0
1.5
4.0
3.5
0.8
1.0
6.2
5.0
gFS
2.0
mhos
Ciss
775
pF
Coss
96
Crss
22
td(on)
24
ON CHARACTERISTICS*
(TJ = 125C)
VGS(th)
RDS(on)

(ID = 5.0 A)
(ID = 2.5 A, TJ = 100C)
VDS(on)
Vdc
Ohm
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 V, ID 5.0 A,

RG = 12
, RL = 50 ,
VGS(on) = 10 V)
Fall Time
Total Gate Charge
GateSource Charge
(VDS = 320 V,
V ID = 5.0
5 0 A,
A
VGS = 10 V)
GateDrain Charge
tr
34
td(off)
60
tf
36
Qg
27
32
Qgs
3.5
Qgd
14
VSD
1.4
ns
nC

Forward OnVoltage
Forward TurnOn Time
(IS = 5.0 A, di/dt = 100 A/s)
ton
trr
Vdc
ns
**
660
3.5
4.5
7.5

Ld

Ls
nH
4748
MTP5N40E
10
VGS = 10 V
TJ = 25C
7V
6V
5V
2
4V
0
4
8
12
16
20
1.2
0.9
0.8
50
VBR(DSS), DRAINTOSOURCE BREAKDOWN

VOLTAGE (NORMALIZED)
VDS 10 V
8
4
TJ = 25C
2
125C
0
55C
2
4
6
8
1.1

(NORMALIZED)
25C
0.8
55C
VGS = 10 V
0
4
VGS = 0
ID = 0.25 mA
0.9
0.8
0
50
100
200
150

With Temperature
1.2
150
TJ = 100C
125
50
10
0.4
0
25
50
75
100
1.2
1.6
25

With Temperature
10
VDS = VGS
ID = 0.25 mA
1.1
10
2.5
VGS = 10 V
ID = 2.5 A
1.5
0.5
0
50
50
100
150

With Temperature
200
4749
MTP5N40E
14
VGS = 20 V
SINGLE PULSE
TC = 25C
12
10 s
10
0.1 ms
1 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
10 ms
100
10
8
6
TJ 150C
4
2
dc
0
100
10
1000
100
200
300
400

Safe Operating Area
500

Safe Operating Area
10000
VDD = 250 V
ID = 5 A
VGS = 10 V
TJ = 25C
1000
tf
tr
td(on)
100
10
1
td(off)
t, TIME (ns)

1000
10
100

one microsecond.


1
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
P(pk)
0.05
RJC(t) = r(t) RJC

RJC = 1.67C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
0.02
t1
0.03
0.02
0.01
0.01
t2
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
2
5
t, TIME (ms)
10
20
50
100
200
500
1000

4750
MTP5N40E
2000
16
TJ = 25C
VGS = 0
C, CAPACITANCE (pF)
1500
1000
Crss
Ciss
500
VDS = 0 V
0
Coss
TJ = 25C
ID = 5 A
VDS = 100 V
12
200 V
320 V
10
5
5
10
20
25
0
15
VGS
VDS
10
20
30
40
50


sourcedrain current versus reapplied drain voltage when
the sourcedrain diode has undergone forward bias. The
rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or half
bridge PWM DC motor controllers are common applications
reverse blocking.
must sustain during commutation; IFM is the maximum forward sourcedrain diode current just prior to the onset of
commutation.

15 V
VGS
0
IFM
dls/dt
90%
IS
10%
trr
ton
IRM
0.25 IRM
VDS(pk)
VR
VDS
dVDS/dt
VdsL
Vf
MAX. CSOA
STRESS AREA

6
RGS
DUT
VR
+
di/dt 90 A/s
IS
+
VGS
0
IFM
100
200
300
400
500
Li
VDS
20 V


Test Circuit
4751
MTP5N40E
V(BR)DSS
Vds(t)
IO
L
VDS
ID(t)
C
4700 F
250 V
ID
VDD
VDD
WDSR

Test Circuit
t, (TIME)
tP
RGS
50
1 LI 2
O
2
V(BR)DSS
V(BR)DSS VDD

Waveforms
RESISTIVE SWITCHING
VDD
ton
td(on)
RL
Vout
Vin
PULSE GENERATOR
Rgen
50
tf
90%
OUTPUT, Vout
INVERTED
10%
90%
50
INPUT, Vin
50%
50%
10%
PULSE WIDTH
* Note: The Mirror is shorted to the Kelvin terminal for this test.
+18 V
VDD
1 mA
47 k
Vin
td(off)
tr
90%
DUT
z = 12
toff
10 V
15 V
SAME
DEVICE TYPE
AS DUT
100 k
2N3904
0.1 F
2N3904
100 k
47 k
100
FERRITE
BEAD
DUT
4752
MOTOROLA
Designer's
Data Sheet
MTP5P06V
TMOS V
TMOS POWER FET

5 AMPERES
60 VOLTS
RDS(on) = 0.450 OHM
TM


TMOS EFET
S
TO220AB

Rating
Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
15
25
Vdc
Vpk

ID
ID
IDM
5
4
18
Adc

Derate above 25C
PD
40
0.27
Watts
W/C
TJ, Tstg
EAS
55 to 175
125
mJ
RJC
RJA
3.75
62.5
C/W
TL
260

(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 5 Apk, L = 10 mH, RG = 25 )
Apk
REV 1
4753
MTP5P06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
61.2
10
100
100
2.0
2.8
4.7
4.0
mV/C
0.34
0.45
Ohm
2.7
2.6
1.5
3.6
Ciss
367
510
Coss
140
200
Crss
29
60
td(on)
11
20
tr
26
50
td(off)
17
30
tf
19
40
QT
12
20
Q1
3.0
Q2
5.0
Q3
5.0
1.72
1.34
3.5
trr
97
ta
73
tb
24
QRR
0.42
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 2.5 Adc, TJ = 150C)
VDS(on)
(VDS = 15 Vdc, ID = 2.5 Adc)
Vdc
Vdc
gFS
Mhos
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 5 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 5 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4754
MTP5P06V
VGS = 10V
8
10
8V
9V
7V
TJ = 25C
6V
4
5V
2
6
5
4
3
2
VGS = 10 V
TJ = 100C
0.45
0.4
25C
0.35
0.3
0.4
TJ = 25C
VGS = 10 V
0.35
0.5
15 V
0.3
0.25
55C
0.25
0.2
1
4
5
6
7
10
0.2

and Temperature
4
5
7
6
10
100
1.8
1.6

and Gate Voltage
VGS = 0 V
VGS = 10 V
ID = 2.5 A
1.4

(NORMALIZED)
0.6
0.55
100C
25C
TJ = 55C
4V
0
VDS 10 V
9
10
1.2
1
0.8
0.6
TJ = 125C
10
0.4
0.2
50
25
0
25
50
75
100
125
150
175

Temperature
50
10
20
30
40
60

4755
MTP5P06V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1000
VDS = 0 V
Ciss
900
TJ = 25C
C, CAPACITANCE (pF)
800
700
600
Crss
500
Ciss
400
300
Coss
200
100
0
Crss
VGS = 0 V
10
5
VGS
10
15
20
25
VDS
4756
60
VGS
54
QT
48
8
7
Q2
Q1
42
36
30
24
18
3
2
Q3
VDS
1
0
TJ = 25C
ID = 5 A
12
10
12
6
0
14
100
TJ = 25C
ID = 5 A
VDD = 30 V
VGS = 10 V
t, TIME (ns)
10
MTP5P06V
tr
td(off)
tf
10
td(on)
1
1
10


100

5
TJ = 25C
VGS = 0 V
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4757
MTP5P06V
SAFE OPERATING AREA
140
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10 s
10
100 s
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
ID = 5 A
120
100
80
60
40
20
0
100
25
50
75
100
125
150
175

Safe Operating Area

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4758
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP6N60E

Fast Recovery Diode
TMOS POWER FET

6.0 AMPERES
600 VOLTS
RDS(on) = 1.2 OHMS
G
S

TO220AB

Symbol
Value
Unit
Rating
VDSS
600
Vdc
VDGR
600
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
6.0
4.6
18
Adc

Derate above 25C
PD
125
1.0
Watts
W/C
TJ, Tstg
55 to 150
Apk

EAS

Junction to Ambient
RJC
RJA
1.0
62.5
C/W
TL
260
mJ
405
REV 2
4759
MTP6N60E
Characteristic
Symbol
Min
Typ
Max
Unit
600
689
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.1
4.0
Vdc
mV/C
0.94
1.2
Ohms
6.0
8.6
7.6
gFS
2.0
5.5
mhos
Ciss
1498
2100
pF
Coss
158
220
Crss
29
60
td(on)
14
30
tr
19
40
td(off)
40
80
tf
26
55
QT
35.5
50
Q1
8.1
Q2
14.1
Q3
15.8
0.83
0.72
1.2
trr
266
ta
166
tb
100
QRR
2.5
3.5
4.5
7.5
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 0.25 Adc)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDS = 300 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
((VDS = 300 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4760
MTP6N60E
12
12
VGS = 10 V
VDS 10 V
6V
10
TJ = 25C
7V
8V
8
6
5V
4
10
8
6
4
100C
2
4V
0
TJ = 55C
0
18
4
8
12
16
6
10
14
2.0
2.5
VGS = 10 V
2.0
TJ = 100C
1.5
25C
1.0
55C
0.5
6
4
8
12
10
6.0
TJ = 25C
1.3
1.2
1.1
VGS = 10 V
1.0
15 V
0.9
0.8
0
2.5
4
6
8
10
12

and Gate Voltage
10000
VGS = 10 V
ID = 3 A
VGS = 0 V
TJ = 125C
1000

(NORMALIZED)
3.0
4.0
5.0
3.5
4.5
5.5
1.4

and Temperature
1.5
0.5
0
50
2.5

25C
25
0
25
50
75
100
125
150

Temperature
100C
100
25C
10
1
0
200
400
100
300
500
600

4761
MTP6N60E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
3200
VDS = 0 V
VGS = 0 V
TJ = 25C
10000
TJ = 25C
VGS = 0 V
Ciss
1600
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
2400
Ciss
Crss
800
Ciss
1000
Coss
100
Crss
10
Coss
0
10
Crss
5
0
VGS
10
15
20
25
10
100
1000
VDS
4762
300
QT
10
8
VGS
Q1
Q2
100
ID = 6 A
TJ = 25C
2
Q3
0
200
VDS
12
24
18
30
0
36
1000
t, TIME (ns)
12
MTP6N60E
VDD = 300 V
ID = 6 A
VGS = 10 V
TJ = 25C
100
td(off)
tf
tr
td(on)
10
10
100


6
VGS = 0 V
TJ = 25C
5
4
3
2
1
0
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
temperature.
4763
MTP6N60E
100

SAFE OPERATING AREA

VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
10
100 s
1 ms
1.0
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
10
dc
100
450
ID = 6 A
400
350
300
250
200
150
100
50
0
1000
25
50
75
100
125
150

Safe Operating Area


1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4764
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP6P20E
TMOS POWER FET

6.0 AMPERES
200 VOLTS
RDS(on) = 1.0 OHM

voltage transients.

G
TO220AB

Symbol
Value
Unit
DrainSource Voltage
VDSS
200
Vdc
VDGR
200
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
6.0
3.9
21
Adc

Derate above 25C
PD
75
0.6
Watts
W/C
TJ, Tstg
55 to 150

EAS
180
mJ

Junction to Ambient
RJC
RJA
1.67
62.5
C/W
TL
260
Rating
Apk
4765
MTP6P20E
Characteristic
Symbol
Min
Typ
Max
Unit
200
211
Vdc
mV/C
10
100
100
nAdc
2.0
3.1
4.0
4.0
Vdc
mV/C
0.81
1.0
Ohm
6.0
7.2
6.3
gFS
1.5
3.8
mhos
Ciss
540
750
pF
Coss
128
180
Crss
40
90
td(on)
12
25
tr
32
65
td(off)
24
50
tf
16
30
QT
22
30
Q1
4.0
Q2
11
Q3
9.0
2.8
2.6
4.0
trr
188
ta
152
tb
36
QRR
1.595
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 100 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 160 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4766
MTP6P20E
12
12
8V
9V
8
7V
4
6V
10
12
14
100C
6
4
VGS = 10 V
TJ = 100C
1.6
1.2
25C
0.8
55C
0.4
4
6
8
10
12
1.4
TJ = 25C
1.2
VGS = 10 V
1.0
15 V
0.8
12
10

and Temperature

and Gate Voltage
2.0
1000
VGS = 10 V
ID = 3.0 A
VGS = 0 V
1.5

(NORMALIZED)
TJ = 55C
2.0
25C
16
10
5V
0
VDS 10 V
VGS = 10 V
TJ = 25C
1.0
0.5
0
50
25
25
50
75
100
125
150
125C
100
100C
10
1
200
160
120
80
40

Temperature

4767
MTP6P20E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
C, CAPACITANCE (pF)
1600
1200
Crss
800
Ciss
400
0
10
Coss
Crss
5
0
VGS
10
15
20
25
VDS
4768
160
QT
10
VGS
8
120
Q2
Q1
80
6
4
ID = 6.0 A
TJ = 25C
2
Q3
0
40
VDS
10
15
0
20
1000
VDD = 100 V
ID = 6.0 A
VGS = 10 V
TJ = 25C
100
t, TIME (ns)
12
MTP6P20E
tr
td(off)
tf
10
25

td(on)
10
100

6
VGS = 0 V
TJ = 25C
5
4
3
2
1
0
0.5
1.0
1.5
2.0
2.5
3.0
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4769
MTP6P20E
SAFE OPERATING AREA
180
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
100 s
1 ms
1.0
10 ms
dc
0.1
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
1.0
0.1
100
ID = 6.0 A
144
108
72
36
0
1000
25
50
75
100
125
150

Safe Operating Area


1.0
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E02
1.0E03
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t,TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4770
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP7N20E

voltage transients.
Fast Recovery Diode
TMOS POWER FET

7.0 AMPERES
200 VOLTS
RDS(on) = 0.70 OHMS
G
S

TO220AB

Rating
Symbol
Value
Unit
VDSS
200
Vdc
VDGR
200
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
7.0
3.8
21
Adc

Derate above 25C
PD
50
0.4
Watts
W/C
TJ, Tstg
55 to 150
Apk

(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 7.0 Adc, L = 10 mH, RG = 25 )
EAS

Junction to Ambient
RJC
RJA
2.5
62.5
C/W
TL
260
mJ
74
4771
MTP7N20E
Characteristic
Symbol
Min
Typ
Max
Unit
200
689
Vdc
mV/C
10
100
100
nAdc
2.0
3.1
7.1
4.0
Vdc
mV/C
0.46
0.7
Ohm
3.4
5.9
5.1
gFS
1.5
mhos
Ciss
Coss
342
480
pF
92
130
Crss
27
55
td(on)
tr
8.8
17.6
29
58
td(off)
tf
22
44
20
40.8
QT
13.7
21
Q1
3.3
Q2
6.6
Q3
5.9
1.02
0.9
1.2
trr
ta
138
93
tb
QRR
45
0.74
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 7.0 Adc)
(VGS = 10 Vdc, ID = 3.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f=1
1.0
0 MHz)
Output Capacitance
TurnOn Delay Time
Rise Time
((VDD = 100 Vdc,, ID = 7.0 Adc,,

VGS = 10 Vdc, Rg = 9.1 )
TurnOff Delay Time

Fall Time
Gate Charge
(See Figure 8)
((VDS = 160 Vdc,, ID = 7.0 Adc,,

VGS = 10 Vdc)
ns
nC


(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure 14)
((IS = 7.0 Adc,, VGS = 0 Vdc,,

dIS/dt = 100 A/s)
VSD
Vdc
ns

Ld

(Measured from the source lead 0.25 from package to source bond pad.)
Ls
nH

4772
MTP7N20E
TJ = 25C
VGS = 10 V
14
9V
12
14
8V
10
8
7V
6
4
6V
5V
12
TJ = 100C
10
25C
8
6
4
4
6
8
5
7
9
1.2
VGS = 10 V
1.0
100C
0.6
TJ = 25C
0.4
55C
0.2
0
10
12
14
0.7
TJ = 25C
0.65
0.6
VGS = 10 V
0.55
0.5
15 V
0.45
0.4
0

and Temperature
4
6
8
10
12
14

and Gate Voltage
2.5
100
VGS = 0 V
VGS = 10 V
ID = 3.5 A
TJ = 125C
2

(NORMALIZED)
10

0.8
55C
12
10
VDS 10 V
1.5
100C
10
25C
0.5
0
50
25
0
25
50
75
100
125
150

Temperature
1
0
50
100
150
200

4773
MTP7N20E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
900
C, CAPACITANCE (pF)
750
VGS = 0 V
TJ = 25C
Ciss
600
Crss
450
Ciss
300
Coss
150
VDS = 0 V
0
10
Crss
0
5
10
15
20
25
VGS
VDS
4774
QT
10
150
VGS
120
Q2
Q1
6
90
60
4
TJ = 25C
ID = 7 A
2
Q3
0
30
VDS
4
10
14
12
1000
TJ = 25C
ID = 7 A
VDS = 100 V
VGS = 10 V
100
t, TIME (ns)
180
12
MTP7N20E
tr
td(off)
10
tf
td(on)
10

100


7
VGS = 0 V
TJ = 25C
6
5
4
3
2
1
0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
temperature.
4775
MTP7N20E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
10
10 s
100 s
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
10
dc
100
80

100
ID = 7 A
70
60
50
40
30
20
10
0
1000
25
50
75
100
125

(NORMALIZED)

Safe Operating Area
150

1
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
t1
t2
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4776
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP8N50E
TMOS POWER FET

8.0 AMPERES
500 VOLTS
RDS(on) = 0.8 OHM

Temperature
Avalanche Mode
Fast Recovery Diode
G
S

TO-220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
8.0
24
Adc

Derate above 25C
PD
125
1.0
Watts
W/C
TJ, Tstg
55 to 150
WDSR(1)
mJ
WDSR(2)
510
82
13
RJC
RJA
1.0
62.5
C/W
TL
260

(1) VDD = 50 V, ID = 8.0 A
REV 1
4777
MTP8N50E
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
500
Vdc
0.25
1.0
OFF CHARACTERISTICS
(VGS = 0, ID = 250 Adc)
(VDS = 500 V, VGS = 0)
(VDS = 400 V, VGS = 0, TJ = 125C)
IDSS
mAdc
IGSSF
100
nAdc
IGSSR
100
nAdc
2.0
1.5
4.0
3.5
0.67
0.8
7.2
6.4
gFS
4.0
mhos
Ciss
1200
pF
Coss
176
Crss
72
td(on)
25
ON CHARACTERISTICS*
(TJ = 125C)
VGS(th)
RDS(on)

(ID = 8.0 Adc)
(ID = 4.0 Adc, TJ = 100C)
VDS(on)
Vdc
Ohm
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 V, ID = 8.0 A,

RD = 30
, RG = 9.1
91
,
VGS(on) = 10 V)
Fall Time
Total Gate Charge
GateSource Charge
(VDS = 400 V,
V ID = 8.0
8 0 A,
A
VGS = 10 V)
GateDrain Charge
ns
tr
36
td(off)
75
tf
30
Qg
46
63
Qgs
10
Qgd
24
VSD
2.0
Vdc
ton
**
ns
trr
700
3.5
4.5
7.5
nC

Forward OnVoltage
Forward TurnOn Time
(IS = 8.0 A, di/dt = 100 A/s)

(Measured from screw on tab to center of die)
LD

LS
nH
* Indicates Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.

4778
MTP8N50E
15
VGS = 10 V
12
7V
TJ = 25C
6V
6
5V
0
0
8
12
16
20
1.2
0.9
0.8
0.7
50
20
VDS 10 V
15
10
100C
TJ = 25C
55C
3
5
7
2
4
6
1.5
TJ = 25C
55C
0
5
10
15
20

(NORMALIZED)
100C
150
1.1
VGS = 0
ID = 250 A
0.9
0.8
50
25
25
50
75
100
125
150

With Temperature
VGS = 10 V
0.5
125
2.5
0
25
50
75
100
1.2
25

With Temperature
(NORMALIZED)
VDS = VGS
ID = 0.25 mA
1.1
2.5
VGS = 10 V
ID = 4 A
1.5
0.5
0
50
25
25
50
75
100
125

With Temperature
150
4779
MTP8N50E
36
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100
100 s
10
1 ms
10 ms
1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
30
24
18
TJ 150C
12
6
0
100
10
1000
500
100
200
300
400

Safe Operating Area
600

Safe Operating Area


be less than:
TJ(max) TC
RJC
10000
VDD = 250 V
ID = 8 A
VGS = 10 V
TJ = 25C
1000
td(off)
tf
t, TIME (ns)
tr
td(on)
100


one microsecond.
1
0.7
0.5
0.3
0.2
10
1
10
100
1000

D = 0.5
0.2
0.1
0.1
0.07
0.05
P(pk)
0.05
0.02
t1
0.03
0.02
0.01
0.01
t2
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
2
5
t, TIME (ms)
10
20
RJC(t) = r(t) RJC

RJC = 1C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
50
100
200
500
1k

4780
MTP8N50E
data.
commutation.
15 V
VGS
0
IFM
dlS/dt
90%
IS
10%
trr
ton
IRM
0.25 IRM
tfrr
VDS(pk)
VR
VDS
VdsL
Vf
MAX. CSOA
STRESS AREA

RGS
DUT
VR
IFM
IS
Li
VDS
+
4
20 V
VGS

di/dt 100 A/s

Test Circuit
0
100
200
300
400
500
600
V(BR)DSS
Vds(t)

IO
L
VDS
ID
ID(t)
C
4700 F
250 V
VDD
t
RGS
50

Test Circuit
VDD
WDSR
t, (TIME)
tP
1 LI 2
O
2
V(BR)DSS
V(BR)DSS VDD

Waveforms
4781
MTP8N50E
TJ = 25C
VGS = 0
2500
C, CAPACITANCE (pF)
3000
Crss
2000
1500
Ciss
1000
500
Coss
VDS = 0 V
0
10
10
20
15
25
16
VDS = 100 V
TJ = 25C
ID = 8 A
12
250 V
400 V
20
40
60
VGS
VDS

+18 V
VDD
1 mA
47 k
Vin
80
10 V
15 V
SAME
DEVICE TYPE
AS DUT
100 k
2N3904
0.1 F
2N3904
100 k
47 k
100
FERRITE
BEAD
DUT
4782
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP9N25E
TMOS POWER FET

9.0 AMPERES
250 VOLTS
RDS(on) = 0.45 OHM

voltage transients.
G
S

TO220AB

Rating
Symbol
Value
Unit
VDSS
250
Vdc
VDGR
250
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
9.0
5.7
32
Adc

Derate above 25C
PD
80
0.64
Watts
W/C
TJ, Tstg
55 to 150
Apk

EAS

Junction to Ambient
RJC
RJA
1.56
62.5
C/W
TL
260
mJ
122
4783
MTP9N25E
Characteristic
Symbol
Min
Typ
Max
Unit
250
328
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
0.37
0.45
Ohm
3.5
5.4
4.7
gFS
3.0
5.2
mhos
Ciss
783
1100
pF
Coss
144
200
Crss
32
65
td(on)
10
20
tr
36
70
td(off)
27
55
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 9.0 Adc)
(VGS = 10 Vdc, ID = 4.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 125 Vdc, ID = 9.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 200 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc)
tf
26
50
QT
26
40
Q1
4.8
Q2
12.7
Q3
9.2
0.9
0.81
1.5
trr
191
ta
126
tb
65
QRR
1.387
3.5
4.5
7.5
ns
nC


(IS = 9.0 Adc, VGS = 0 Vdc, TJ = 125C)

(S Figure
Fi
(See
14)
((IS = 9.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4784
MTP9N25E
18
VGS = 10 V
TJ = 25C
9V
15
VDS 10 V
8V
7V
18
12
9
6V
6
3
100C
9
6
0
0
10
12
1.2
VGS = 10 V
1.0
0.8
TJ = 100C
0.6
25C
0.4
0.2
55C
0
0
6
9
12
15
18
25C
12
5V
0.6
TJ = 25C
0.5
VGS = 10 V
0.4
15 V
0.3
0

and Temperature
6
9
12
15
18

and Gate Voltage
1000
2.5
VGS = 0 V
VGS = 10 V
ID = 4.5 A
2.0
TJ = 125C
100

(NORMALIZED)
TJ = 55C
15
1.5
1.0
100C
10
25C
1
0.5
0
50
0.1
25
0
25
50
75
100
125
150

Temperature
50
150
100
200
250

4785
MTP9N25E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2000
VDS = 0 V
1600
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25C
Ciss
1200
Ciss
Crss
800
Coss
400
0
Crss
10
5
VGS
10
15
20
25
VDS
4786
240
12
180
QT
VGS
8
Q1
120
Q2
ID = 9 A
TJ = 25C
60
Q3
0
VDS
0
12
18
24
0
30
1000
t, TIME (ns)
16
MTP9N25E
VDD = 250 V
ID = 9 A
VGS = 10 V
TJ = 25C
100
tr
td(off)
10
tf
td(on)
10
100


9.0
VGS = 0 V
TJ = 25C
7.5
6.0
4.5
3.0
1.5
0
0.5
0.55
0.6
0.7
0.8
0.65
0.75
0.85
0.9
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4787
MTP9N25E
SAFE OPERATING AREA
125
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10 s
10
100 s
1
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
dc
1.0
100
10
ID = 9 A
100
75
50
25
0
1000

Safe Operating Area
25
50
75
100
125
150


1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
SINGLE PULSE
0.01
0.00001
t2
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0
10
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4788
MOTOROLA
Designer's
Data Sheet
MTP10N10E
TMOS IV

This advanced E series of TMOS power MOSFETs is designed
to withstand high energy in the avalanche and commutation
modes. These new energy efficient devices also offer drainto
source diodes with fast recovery times. Designed for low voltage,
high speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited
for bridge circuits where diode speed and commutating safe
operating area are critical, and offer additional safety margin

Avalanche Mode Unclamped Inductive Switching (UIS)
Energy Capability Specified at 100C
Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits
Fast Recovery Diode
TMOS POWER FETs

10 AMPERES
100 VOLTS
RDS(on) = 0.25 OHM
G
S

TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
VDGR
100
Vdc
GateSource Voltage
VGS
20
Vdc

ID
IDM
10
25
Adc

Derate above 25C
PD
75
0.6
Watts
W/C
TJ, Tstg
65 to 150
RJC
RJA
1.67
62.5
C/W
TL
275
4789
MTP10N10E
Characteristic
Symbol
Min
Max
Unit
V(BR)DSS
100
Vdc
10
80
OFF CHARACTERISTICS
(VGS = 0, ID = 0.25 mA)
(VDS = Rated VDSS, VGS = 0)
(VDS = 0.8 Rated VDSS, VGS = 0, TJ = 125C)
IDSS
IGSSF
100
nAdc
IGSSR
100
nAdc
2.0
1.5
4.5
4.0
0.25
2.7
2.4
4.0
60
100
40
Ciss
600
Coss
400
Crss
100
td(on)
50
tr
80
td(off)
100
ON CHARACTERISTICS*
TJ = 100C
VGS(th)
RDS(on)
DrainSource OnVoltage (VGS = 10 V)

(ID = 10 Adc)
(ID = 5.0 Adc, TJ = 100C)
VDS(on)
gFS
Vdc
Ohm
Vdc
mhos

Unclamped DraintoSource Avalanche Energy See Figures 14 and 15
(ID = 25 A, VDD = 25 V, TC = 25C, Single Pulse, Nonrepetitive)
(ID = 10 A, VDD = 25 V, TC = 25C, P.W. 200 s, Duty Cycle 1%)
(ID = 4.0 A, VDD = 25 V, TC = 100C, P.W. 200 s, Duty Cycle 1%)
WDSR
mJ
Input Capacitance
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
S Figure
See
Fi
16
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 25 V, ID = 5.0 A,
RG = 50 )
See Figure 9
Fall Time
Total Gate Charge
GateSource Charge
GateDrain Charge

ID = Rated ID, VGS = 10 V)
S Figures
See
Fi
17 and
d 18
tf
80
Qg
15 (Typ)
30
Qgs
8.0 (Typ)
Qgd
7.0 (Typ)
VSD
1.4 (Typ)
1.7
ns
nC

Forward OnVoltage
Forward TurnOn Time
(IS = Rated
R t d ID
VGS = 0)
ton
trr
Vdc

70 (Typ)
3.5 (Typ)
4.5 (Typ)
7.5 (Typ)
ns

Ld

Ls
nH
* Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
4790
MTP10N10E
20
VGS = 10 V
8V
TJ = 25C
7V
16
6V
12
5V
4
4V
0
8
12
16
20
1.2
0.9
0.8
0.7
50
20
TJ = 55C
VDS = 10 V
VDS = 15 V
12
100C
8
+25C
4
6
8
10

(NORMALIZED)
0.4
TJ = 100C
25C
55C
0.1
150
1.6
VGS = 0 V
ID = 0.25 mA
1.2
0.8
0.4
0
50
50
100
150
200

With Temperature
VGS = 10 V
125
0.5
0.2
0
25
50
75
100
0.3
25

With Temperature
(NORMALIZED)
16
VDS = VGS
ID = 1 mA
1.1
10
1.6
VGS = 10 V
ID = 5 mA
1.2
0.8
0.4
0
50
50
100
150

With Temperature
200
4791
MTP10N10E
40
10 s
100 s
10
1 ms
VGS = 20 V
SINGLE PULSE
TC = 25C
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.3
30
TJ 150C
30
20
10
0
100
10
20
40
60
80

Safe Operating Area

Safe Operating Area

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

one microsecond.

be less than:
TJ(max) TC
RJC
1K
td(off)
VDD = 25 V
ID = 5 A
VGS = 10 V
TJ = 25C
500
300
200
t, TIME (ns)
1
0.7
0.5
100
100
70
50
30
20
tf
tr
td(on)
10
7
5
3
2
1
2 3
10
20 30 50 100 200 300 500
1K

D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.03
P(pk)
0.05
0.01
t1
t2
0.02
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
2 3
5
t, TIME (ms)
10
20
30
RJC(t) = r(t) RJC

RJC = 1.67C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
50
100
200 300
500
1000

4792
MTP10N10E
rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or halfbridge PWM DC motor controllers are common applications
reverse blocking.
commutation.
15 V
VGS
0
IFM
IS
10%
trr
ton
IRM
0.25 IRM
VDS(pk)
VR
VDS
dVDS/dt
VdsL
Vf
MAX. CSOA
STRESS AREA

RGS
VR
+
IFM
IS
+
20
20 V
VGS
Li
VDS
25
15

dIs/dt 400 A/s

10

Test Circuit
5
0
DUT
30
dls/dt
90%
100
20
40
60
80
120
V(BR)DSS
Vds(t)

IO
L
VDS
ID
ID(t)
C
4700 F
250 V
VDD
t
RGS
50

Test Circuit
VDD
WDSR
t, (TIME)
tP
1 LI 2
O
2
V(BR)DSS
V(BR)DSS VDD

Waveforms
4793
MTP10N10E
1250
TJ = 25C
Ciss
C, CAPACITANCE (pF)
1000
Coss
750
500
Ciss
250
Coss
Crss
0
20
10
10
20
30
10
50 V
80 V
4
ID = RATED ID
2
8
12
VGS
VDS
16
20

+18 V
VDD
1 mA
47 k
Vin
TJ = 25C
VDS = 30 V
10 V
15 V
SAME
DEVICE TYPE
AS DUT
100 k
2N3904
0.1 F
2N3904
100 k
47 k
100
FERRITE
BEAD
DUT
4794
MOTOROLA
Data Sheet
Logic Level TMOS E-FET.
Designer's
MTP10N10EL

energy in the avalanche and commutation modes. This new energy
voltage transients.
Fast Recovery Diode
TMOS POWER FET

10 AMPERES
100 VOLTS
RDS(on) = 0.22 OHMS
G
S

TO220AB

Rating
Symbol
Value
Unit
VDSS
100
Vdc
VDGR
100
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
10
6.0
35
Adc

Derate above 25C
PD
40
0.32
1.75
Watts
W/C
Watts
TJ, Tstg
55 to 150
Apk

(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 10 Adc, L = 1.0 mH, RG = 25 )
EAS

Junction to Ambient
RJC
RJA
RJA
3.13
100
71.4
C/W
TL
260
mJ
50
4795
MTP10N10EL
Characteristic
Symbol
Min
Typ
Max
Unit
100
115
10
100
100
1.0
1.45
4.0
2.0
mV/C
0.17
0.22
Ohm
1.85
2.6
2.3
gFS
5.0
7.9
mhos
Ciss
Coss
741
1040
pF
175
250
Crss
18.9
40
td(on)
tr
11
20
74
150
td(off)
tf
17
30
38
80
QT
9.3
15
Q1
2.56
Q2
4.4
Q3
4.6
0.98
0.898
1.6
trr
ta
124.7
86
tb
QRR
38.7
0.539
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 5.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f=1
1.0
0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 50 Vdc,, ID = 10 Adc,,
(V
VGS = 5.0 Vdc, Rg = 9.1 )
Fall Time
Gate Charge
(See Figure 8)
((VDS = 80 Vdc,, ID = 10 Adc,,

VGS = 5.0 Vdc)
ns
nC


(IS = 10 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 10 Adc,, VGS = 0 Vdc,,
dIS/dt = 100 A/s)
VSD
Vdc
ns

Ld

(Measured from the source lead 0.25 from package to source bond pad.)
Ls
nH

4796
MTP10N10EL
20
7V
VGS = 10 V
TJ = 25C
VDS 5 V
5V
20
4.5 V
15
4V
10
3.5 V
5
3V
55C
15
25C
TJ = 100C
10
2V
0
0.35
VGS = 5 V
100C
0.25
TJ = 25C
0.15
55C
0.05
10
15
20
0.25
TJ = 25C
VGS = 5 V
0.2
10 V
0.15
0.1
5

and Temperature
10
15
20

and Gate Voltage
100
VGS = 5 V
ID = 5 A
VGS = 0 V
TJ = 125C
1.5

(NORMALIZED)

2
3
4
0.5
0
50
25
0
25
50
75
100
125
150

Temperature
10
100C
1
0
80
20
40
60
100

4797
MTP10N10EL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1800
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
1600 Ciss
1400
1200
1000
800
Crss
Ciss
600
400
Coss
200
0
10
Crss
5
5
0
10
15
20
25
VGS
VDS
4798
QT
75
VGS
60
45
Q2
Q1
VDS
Q3
0
30
TJ = 25C
ID = 10 A
15
1000
TJ = 25C
ID = 10 A
VDS = 100 V
VGS = 5 V
100
t, TIME (ns)
90
12
MTP10N10EL
tr
tf
td(off)
td(on)
10
0
10
10

100

10
VGS = 0 V
TJ = 25C
0
0.5
0.6
0.7
0.8
0.9
1.0
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
temperature.
4799
MTP10N10EL
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
10
100 s
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
50

100
10
ID = 10 A
40
30
20
10
100
25
50
75
100
125

Safe Operating Area
150


1
D = 0.5
0.2
0.1
0.1 0.05
P(pk)
0.02
t1
0.01
t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4800
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP10N40E
TMOS POWER FET

10 AMPERES
400 VOLTS
RDS(on) = 0.55 OHMS

Temperature
Avalanche Mode
Fast Recovery Diode
G
S

TO-220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
400
Vdc
VDGR
400
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
10
40
Adc

Derate above 25C
PD
125
1.0
Watts
W/C
TJ, Tstg
65 to 150
WDSR(1)
mJ
WDSR(2)
520
83
13
RJC
RJA
1.0
62.5
C/W
TL
275

(1) VDD = 50 V, ID = 10 A
4801
MTP10N40E
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
400
Vdc
0.25
1.0
OFF CHARACTERISTICS
(VGS = 0, ID = 0.25 mA)
(VDS = 400 V, VGS = 0)
(VDS = 320 V, VGS = 0, TJ = 125C)
IDSS
mAdc
IGSSF
100
nAdc
IGSSR
100
nAdc
2.0
1.5
4.0
3.5
0.4
0.55
6.0
4.75
gFS
4.0
mhos
Ciss
1570
pF
Coss
230
Crss
55
td(on)
25
ON CHARACTERISTICS*
(TJ = 125C)
VGS(th)
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 5.0 A)
RDS(on)

(ID = 5.0 A)
(ID = 2.5 A, TJ = 100C)
VDS(on)
Vdc
Ohms
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 200 V, ID 10 A,
RL = 20
, RG = 9.1
91
,
VGS(on) = 10 V)
Fall Time
Total Gate Charge
GateSource Charge
(VDS = 320 V,
V ID = 10 A,
A
VGS = 10 V)
GateDrain Charge
ns
tr
37
td(off)
75
tf
31
Qg
46
63
Qgs
10
Qgd
23
VSD
2.0
Vdc
ton
**
ns
trr
250
3.5
4.5
7.5
nC

Forward OnVoltage
Forward TurnOn Time
(IS = 10 A, di/dt = 100 A/s)

Ld

Ls
nH
nH
* Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

4802
MTP10N40E
20
VGS = 10 V
TJ = 25C
7V
16
12
6V
8
4
5V
0
0
8
12
16
20
1.2
0.9
0.8
0.7
50
25
VDS = 50 V
20
15
10
TJ = 25C
100C
0
55C
3
5
7
2
4
6

(NORMALIZED)
TJ = 100C
1
25C
0.5
55C
0
15
20
25
150
1.1
VGS = 0
ID = 250 A
0.9
0.8
50
25
25
50
75
100
125
150

With Temperature
VGS = 10 V
10
125
1.5
0
25
50
75
100
1.2
25

With Temperature
(NORMALIZED)
VDS = VGS
ID = 0.25 mA
1.1
30
3
VGS = 10 V
ID = 5 A
2
0
50
25
25
50
75
100
125

With Temperature
150
4803
MTP10N40E
45
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100 s
10
1 ms
1
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
100
30
TJ 150C
15
dc
0
100
10
1000
500
100
200
300
400

Safe Operating Area

Safe Operating Area


be less than:
TJ(max) TC
RJC
10000
VDD = 200 V
ID 10 A
VGS = 10 V
TJ = 25C
1000
td(off)
tf
tr
t, TIME (ns)
td(on)
100


one microsecond.
1
0.7
0.5
10
1
10
100
1000

D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
0.05
0.02
t1
0.03
0.02
t2
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
2
5
t, TIME (ms)
10
20
RJC(t) = r(t) RJC

RJC = 1C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
50
100
200
500
1k

4804
MTP10N40E
data.
commutation.
15 V
VGS
0
IFM
dlS/dt
90%
IS
10%
trr
ton
IRM
0.25 IRM
tfrr
VDS(pk)
VR
VDS
VdsL
Vf
MAX. CSOA
STRESS AREA

RGS
DUT
VR
12
IFM
IS
Li
VDS
+
9
20 V
VGS
6

di/dt 120 A/s

3

Test Circuit
0
100
200
300
400
500
V(BR)DSS
Vds(t)

IO
L
VDS
ID
ID(t)
C
4700 F
250 V
VDD
t
RGS
50

Test Circuit
VDD
WDSR
t, (TIME)
tP
1 LI 2
O
2
V(BR)DSS
V(BR)DSS VDD

Waveforms
4805
MTP10N40E
TJ = 25C
VGS = 0 V
3000
C, CAPACITANCE (pF)
3500
2500
2000
Crss
Ciss
1500
1000
500
0
10
VDS = 0 V
5
Coss
5
10
15
20
25
16
VDS = 100 V
TJ = 25C
ID = 10 A
12
250 V
320 V
20
40
60
VGS
VDS

+18 V
VDD
1 mA
47 k
Vin
80
10 V
15 V
SAME
DEVICE TYPE
AS DUT
100 k
2N3904
0.1 F
2N3904
100 k
47 k
100
FERRITE
BEAD
DUT
4806
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP12N10E

voltage transients.
Designed to Eliminate the Need for External Zener Transient
Suppressor Absorbs High Energy in the Avalanche Mode
Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits
Fast Recovery Diode
TMOS POWER FET

12 AMPERES
100 VOLTS
RDS(on) = 0.16 OHM
G
S

TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
VDGR
100
Vdc

GateSource Voltage Single Pulse (tp 50 s)
VGS
20
40
Vdc

ID
IDM
12
30
Adc

Derate above 25C
PD
79
0.53
Watts
W/C
TJ, Tstg
55 to 175
EAS
290
mJ
RJC
RJA
1.9
62.5
C/W
TL
260
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS (TJ 175C)

(VDD = 25 V, VGS = 10 V, L = 4.03 mH, RG = 25 , Peak IL = 12 A)
(See Figures 15, 16 and 17)
REV 1
4807
MTP12N10E
Characteristic
Symbol
Min
Typ
Max
Unit
100
110
Vdc
mV/C
10
100
OFF CHARACTERISTICS
(VGS = 0, ID = 250 Adc)
V(BR)DSS

(VDS = 100 V, VGS = 0)
(VDS = 100 V, VGS = 0, TJ = 150C)
IDSS
IGSSF
100
nAdc
IGSSR
100
nAdc
2.0
3.0
6.0
4.0
mV/C
0.125
0.16
Ohm
1.5
1.4
2.4
1.92
gFS
4.0
5.0
mhos
Ciss
600
pF
Crss
70
Coss
230
td(on)
10
tr
64
td(off)
21
ON CHARACTERISTICS*
VGS(th)
RDS(on)

(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150C)
VDS(on)
Forward Transconductance (VDS 15 V, ID = 6.0 A)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
S Figure
See
Fi
14
SWITCHING CHARACTERISTICS (TJ = 100C)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 50 V, ID = 12 A,
VGS = 10 V
V, RG = 12 )
See Figure 7
Fall Time
tf
30
QT
18
26
Q1
4.0
Q2
10
Q3
8.0
( S = 12 A, VGS = 0))
(I
(IS = 12 A, VGS = 0, TJ = 150C)
VSD
1.0
2.5
0.83
(IS = 12 A, VGS = 0,
dIS/dt = 100 A/s, VR = 50 V)
trr
110
3.5
4.5
7.5
Gate Charge
(VDS = 80 V, ID = 12 A,
VGS = 10 Vdc)
See Figures 5 and 6
ns
nC

Forward OnVoltage
Vdc
ns

Ld

Ls
nH
* Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
4808
MTP12N10E
24
24
VGS = 10 V
VDS 15 V
9V
20
8V
16
7V
12
6V
5V
12
8
4
0
2
3
4

(NORMALIZED)
0.6
VGS = 10 V
0.5
0.4
0.3
TJ = 100C
0.2
25C
0.1
55C
0
0
9
12
15
18
21
2.2
VGS = 10 V
ID = 6 A
2
1.8
1.6
1.4
1.2
1
0.8
0.6
50
24
25
15 V
1 mA
10 V
0.1 F
2N3904
2N3904
100 k
47 k
100 k
100
FERRITE
BEAD
SAME
DEVICE
TYPE
AS DUT
DUT
47 k
VDD
0
25
50
75
100 125
150
175

with Temperature
+18 V
10
2
4
6
8

100C
25C
16
Vin
TJ = 55C
20
20
100
ID = 12 A
VDS = 80 V
TJ = 25C
VDS
16
80
12
60
QT
40
Q1
Q2
VGS
20
Q3
0
0
10
15
20
0
25
TJ = 25C

DrainToSource Voltage versus Gate Charge
4809
MTP12N10E
be less than:
TJ(max) TC
RJC
1000
100
tf
td(off)
10

peak current, IDM and the breakdown voltage, BVDSS. The
one microsecond.
1
10
100
1000

40
1000
100
VGS = 20 V
SINGLE PULSE
TC = 25C
OPERATION LIMITED IN THIS

AREA BY RDS(on)
10
10 ms
tr
td(on)
100 s
1 ms
dc
1
0.1
VDD = 50 V
ID = 12 A
VGS = 10 V
TJ = 25C
t, TIME (ns)

RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
30
20
TJ 175C
10
0
0.1
10
1
100

Safe Operating Area
20
40
60
80
100
120

Safe Operating Area

1
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
0.02
t1
0.03
t2
0.01
0.02
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
2
t, TIME (ms)
10
20
RJC(t) = r(t) RJC

RJC = 1.9C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
50
100
200
500
1000

4810
MTP12N10E
12 defines the limits of safe operation for commutated source-drain current versus re-applied drain voltage when the
source-drain diode has undergone forward bias. The curve
shows the limitations of IFM and peak VDS for a given rate of
change of source current. It is applicable when waveforms
similar to those of Figure 11 are present. Full or half-bridge
PWM DC motor controllers are common applications requiring CSOA data.
reverse blocking.
commutation.
VR is specified at rated BVDSS to ensure that the CSOA
stress is maximized as IS decays from IRM to zero.
be practical minimums.
15 V
VGS
0
IFM
dls/dt
90%
IS
10%
trr
ton
IRM
0.25 IRM
VDS(pk)
VR
VDS
dVDS/dt
VdsL
Vf
MAX. CSOA
STRESS AREA
IS , SOURCETODRAIN CURRENT (AMPS)
15
RGS
TJ 175C
IS = 12 A
dIs/dt 100 A/s
VR 100 V
12
VR
+
IFM
IS
20 V
VGS
20
40
60
80 100 120 140 160
180
DUT
200
Figure 12. Commutating Safe Operating

Area (CSOA)
Li
VDS
VR = 80% OF RATED BVDSS


Test Circuit
4811
EAS , SINGLE PULSE AVALANCHE ENERGY (mJ)
MTP12N10E
300
2000
VGS = 0 V
VDS = 0 V
PEAK IL = 12 A
VDD = 25 V
250
C, CAPACITANCE (pF)
1500
200
150
1000
Ciss
100
500
Coss
Crss
0
15
15
30
45
60
50
0
25
VGS
VDS
75
100
125
150
50
175

BVDSS
L
VDS
IL
IL(t)
VDD
t
RG
VDD
tP

Test Circuit
4812
t, (TIME)

Waveforms
MOTOROLA
Designer's
Data Sheet
MTP12P10

This TMOS Power FET is designed for medium voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds Switching Times

Specified at 100C
Designers Data IDSS, VDS(on), VGS(th) and SOA Specified
at Elevated Temperature
Rugged SOA is Power Dissipation Limited
SourcetoDrain Diode Characterized for Use With Inductive Loads
TMOS POWER FET

12 AMPERES
100 VOLTS
RDS(on) = 0.3 OHM
G
S

TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
VDGR
100
Vdc

GateSource Voltage Nonrepetitive (tp 50 s)
VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
12
28
Adc

Derate above 25C
PD
75
0.6
Watts
W/C
TJ, Tstg
65 to 150
RJC
RJA
1.67
62.5
C/W
TL
260
REV 1
4813
MTP12P10
Characteristic
Symbol
Min
Max
Unit
V(BR)DSS
100
Vdc
10
100
OFF CHARACTERISTICS
(VGS = 0, ID = 0.25 mA)
(VDS = Rated VDSS, VGS = 0)
(VDS = Rated VDSS, VGS = 0, TJ = 125C)
Adc
IDSS
IGSSF
100
nAdc
IGSSR
100
nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)

TJ = 100C
VGS(th)
2.0
1.5
4.5
4.0
Vdc
RDS(on)
0.3
Ohm
DrainSource OnVoltage (VGS = 10 V)

(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 100C)
VDS(on)
4.2
3.8
gFS
2.0
mhos
Ciss
920
pF
Coss
575
Crss
200
td(on)
50
tr
150
td(off)
150
tf
150
Qg
33 (Typ)
50
ON CHARACTERISTICS*
Vdc
Input Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
S Figure
See
Fi
10
Output Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 25 V, ID = 0.5 Rated ID,

RG = 50 )
See Figures 12 and 13
Fall Time
Total Gate Charge
GateSource Charge
GateDrain Charge

ID = Rated ID, VGS = 10 V)
S Fi
See
Figure 11
Qgs
16 (Typ)
Qgd
17 (Typ)
VSD
4.0 (Typ)
5.5
ns
nC

Forward OnVoltage
Forward TurnOn Time
(IS = Rated
R t d I D,
VGS = 0)
ton
Vdc
trr
300 (Typ)
ns

(Measured from the contact screw on the header closer
to the source pin and the center of the die)
Ld
5.0 (Typ)
nH

(Measured from the source pin, 0.25 from the package
to the source bond pad)
Ls
12.5 (Typ)
3.5 (Typ)
4.5 (Typ)
7.5 (Typ)
INTERNAL PACKAGE INDUCTANCE (TO204)
INTERNAL PACKAGE INDUCTANCE (TO220)

Ld

Ls
nH
4814
MTP12P10
20
VGS = 20 V
18
16
10 V
TJ = 25C
8V
14
12
7V
10
8
6V
6
4
5V
2
0
2
3
4
5
6
7
8
9
10
1.2
0.9
0.8
50
25C
16
TJ = 55C
100C
12
8
VDS = 20 V
8
12
16
20

(NORMALIZED)
0.4
25C
55C
0.1
12
16
20
24
28
32
150
1.6
VGS = 0
ID = 0.25 mA
1.2
0.8
0.4
0
50
75
25
50
75
100
125
150
Figure 4. Normalized Breakdown Voltage

versus Temperature
TJ = 100C
0.2
125
0.5
0.3
0
25
50
75
100
VGS = 15 V
25

With Temperature
(NORMALIZED)
20
VDS = VGS
ID = 1 mA
1.1
36
40
1.8
VGS = 10 V
ID = 6 A
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
50
25
25
50
75
100
125
150

With Temperature
4815
MTP12P10
50
1 ms
10
10 s
0.1 ms
10 ms
VGS = 20 V
SINGLE PULSE
TC = 25C
dc
MTM/MTP12P06
RDS(on) LIMIT
PACKAGE LIMIT
THERMAL LIMIT MTM/MTP12P10
40
30
20
MTM/MTP12P06
10
MTM/MTP12P10
1
100
10

Safe Operating Area
10
30
50
70
20
40
60
80
90
100

Safe Operating Area


one microsecond.
be less than:
TJ(max) TC
RJC

1
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
0.02
0.03
t1
0.02
t2
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
2
5
t, TIME (ms)
10
20
RJC(t) = r(t) RJC

RJC = 1.67C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
50
100
200
500
1000
4816
MTP12P10
0
TC = 25C
VGS = 0
f = 1 MHz
1200
C, CAPACITANCE (pF)
1600
Ciss
800
Coss
400
Crss
0
10
30
20
VDS, SOURCETODRAIN VOLTAGE (VOLTS)
40
TJ = 25C
ID = 12 A
2
4
6
8
10
VDS = 30 V
12
50 V
14
16
80 V
0
10
15
20
25
30
35
40
45
50

RESISTIVE SWITCHING
VDD
ton
td(on)
RL
tr
90%
Vout
Vin
PULSE GENERATOR
Rgen
50
DUT
z = 50
OUTPUT, Vout
toff
td(off)
10%
90%
50
INPUT, Vin
50%
50%
10%
INVERTED
tf
90%
PULSE WIDTH
4817
MOTOROLA
Designer's
Data Sheet
MTP15N06V
TMOS V
TMOS POWER FET

15 AMPERES
60 VOLTS
RDS(on) = 0.12 OHM
TM


TMOS EFET
S
TO220AB

Rating
Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
20
25
Vdc
Vpk

ID
ID
IDM
15
8.7
45
Adc

Derate above 25C
PD
55
0.5
Watts
W/C
TJ, Tstg
EAS
55 to 175
113
mJ
RJC
RJA
2.73
62.5
C/W
TL
260
DrainSource Voltage

Apk
REV 2
4818
MTP15N06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
67
Vdc
mV/C
10
100
100
nAdc
2.0
2.7
5.0
4.0
Vdc
mV/C
0.08
0.12
Ohm
2.0
2.2
1.9
gFS
4.0
6.2
mhos
Ciss
469
660
pF
Coss
148
200
Crss
35
60
td(on)
7.6
20
tr
51
100
td(off)
18
40
tf
33
70
QT
14.4
20
Q1
2.8
Q2
6.4
Q3
6.1
1.05
1.5
1.6
trr
59.3
ta
46
tb
13.3
QRR
0.165

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 15 Adc)
(ID = 7.5 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 15 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 15 Adc, VGS = 0 Vdc, TJ = 150C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

4819
MTP15N06V
30
7V
20
15
6V
10
5V
25C
15
10
10
VGS = 10 V
TJ = 100C
0.14
25C
0.08
55C
25
10
15
20
30
0.13
TJ = 25C
0.11
VGS = 10 V
0.09
15 V
0.07
0.05

and Temperature
10
15
20
25
30

and Gate Voltage
100
VGS = 0 V
VGS = 10 V
ID = 7.5 A
1.6

(NORMALIZED)
55C
20
0.20
0.02
25
5
0
TJ = 100C
VDS 10 V
9V
25
30
8V
VGS = 10 V
TJ = 25C
1.2
0.8
0.4
50
4820
25
25
50
75
100
125
150
175
TJ = 125C
10
30
10
20
40
50

Temperature

60
MTP15N06V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1500
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
1200
Ciss
900
600
Ciss
Crss
300
Coss
Crss
0
10
0
VGS
10
15
20
25
VDS
4821
QT
50
10
VGS
40
Q2
Q1
6
30
20
ID = 15 A
TJ = 25C
2
0
Q3
3
VDS
6
12
10
0
15
1000
VDD = 30 V
ID = 15 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
60
12
MTP15N06V
100
tr
tf
td(off)
10
td(on)
1
1
10


100

15
VGS = 0 V
TJ = 25C
12
0
0.5
0.7
0.9
1.1
1.3
1.5
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4822
temperature.
MTP15N06V
SAFE OPERATING AREA
120
VGS = 10 V
SINGLE PULSE
TC = 25C

100
10 s
10
100 s
1 ms
10 ms
1.0
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
10
1.0
0.1
ID = 15 A
100
80
60
40
20
0
25
100
50
75
100
125
150
175

Safe Operating Area


1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
t1
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4823
MOTOROLA
Product Preview
MTP15N06VL
TMOS V
TMOS POWER FET

15 AMPERES
60 VOLTS
RDS(on) = 0.085 OHM
TM


S
TO220AB

Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
15
25
Vdc
Vpk

ID
ID
IDM
15
12
53
Adc

Derate above 25C
PD
60
0.40
Watts
W/C
TJ, Tstg
EAS
55 to 175
113
mJ
RJC
RJA
2.5
62.5
C/W
TL
260
Rating

Apk
4824
MTP15N06VL
Characteristic
Symbol
Min
Typ
Max
Unit
60
TBD
Vdc
mV/C
10
100
100
1.0
1.5
TBD
2.0
mV/C
0.075
0.085
Ohm
1.5
1.3
gFS
8.0
10
mhos
Ciss
630
880
pF
Coss
270
380
Crss
56
110
td(on)
26
50
tr
105
210
td(off)
80
160
tf
70
140
QT
12
20
Q1
3.0
Q2
8.0
Q3
10
1.0
0.9
1.6
trr
100
ta
55
tb
45
QRR
0.345
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 5.0 Vdc, ID = 15 Adc)
(VGS = 5.0 Vdc, ID = 7.5 Adc, TJ = 150C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5
5.0
0 Vdc,
Vdc
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc)
ns
nC


(IS = 15 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

(Measured from contact screw on tab to center of die.)
LD

LS
nH
nH

4825
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP16N25E
TMOS POWER FET

16 AMPERES
250 VOLTS
RDS(on) = 0.25 OHM

voltage transients.

G
TO220AB

Symbol
Value
Unit
DrainSource Voltage
VDSS
250
Vdc
VDGR
250
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
16
10
56
Adc

Derate above 25C
PD
125
1.0
Watts
W/C
TJ, Tstg
55 to 150

EAS
384
mJ

Junction to Ambient
RJC
RJA
1.0
62.5
C/W
TL
260
Rating
Apk
4826
MTP16N25E
Characteristic
Symbol
Min
Typ
Max
Unit
250
333
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
0.17
0.25
Ohm
3.6
4.8
4.2
gFS
3.0
7.0
mhos
Ciss
1558
2180
pF
Coss
281
390
Crss
130
260
td(on)
15
30
tr
64
130
td(off)
56
110
tf
44
90
QT
53.4
70
Q1
9.3
Q2
27.5
Q3
17.1
0.915
1.39
1.5
trr
234
ta
170
tb
64
QRR
2.165
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 16 Adc)
(ID = 8.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 125 Vdc, ID = 16 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 200 Vdc, ID = 16 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 16 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4827
MTP16N25E
32
VGS = 10 V
TJ = 25C
VDS 10 V
8V
32
7V
24
6V
16
24
16
8
TJ = 55C
100C
5V
25C
0
TJ = 100C
0.4
0.3
25C
0.2
0.1
55C
10
15
20
25
30
35
0.26
TJ = 25C
0.22
VGS = 10 V
0.18
15 V
0.14
0.1
16
24
32
40

and Temperature

and Gate Voltage
3.0
1000
VGS = 10 V
ID = 8 A
VGS = 0 V
TJ = 125C

(NORMALIZED)
0.5
2.5
VGS = 10 V
0.6
2.0
1.5
1.0
100
100C
10
25C
0.5
0
50
4828
25
25
50
75
100
125
150
50
100
150
200
250

Temperature

300
MTP16N25E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
5000
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
4000
Ciss
3000
2000
Ciss
Crss
1000
0
10
Coss
Crss
5
0
VGS
10
15
20
25
VDS
4829
200
QT
VGS
150
Q2
Q1
100
ID = 16 A
TJ = 25C
3
Q3
0
10
50
VDS
40
20
30
0
50
1000
t, TIME (ns)
12
MTP16N25E
VDD = 250 V
ID = 16 A
VGS = 10 V
TJ = 25C
100
tr
td(off)
tf
10
60
td(on)
10

100

16
VGS = 0 V
TJ = 25C
12
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4830
temperature.
MTP16N25E
SAFE OPERATING AREA
400
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10 s
10
100 s
1 ms
10 ms
1.0
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
10
1.0
300
200
100
1000
100
ID = 16 A
25
50
75
100
125
150

Safe Operating Area


1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E02
1.0E03
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t,TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4831
MOTOROLA
Product Preview
MTP20N06V
TMOS V

TMOS POWER FET

20 AMPERES
60 VOLTS
RDS(on) = 0.085 OHM
TM


S
TO220AB

Rating
Symbol
Value
Unit
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
20
25
Vdc
Vpk

ID
ID
IDM
20
13
70
Adc

Derate above 25C
PD
60
0.40
Watts
W/C
TJ, Tstg
55 to 175

EAS
200
mJ

RJC
RJA
2.5
62.5
C/W
TL
260
Apk
4832
MTP20N06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
TBD
Vdc
mV/C
10
100
100
nAdc
2.0
2.8
TBD
4.0
Vdc
mV/C
0.065
0.085
Ohm
2.0
1.9
gFS
6.0
8.0
mhos
Ciss
590
830
pF
Coss
180
250
Crss
40
80
td(on)
8.7
20
tr
77
150
td(off)
26
50
tf
46
90
QT
28
40
Q1
4.0
Q2
9.0
Q3
8.0
1.0
0.96
1.6
trr
60
ta
52
tb
8.0
QRR
0.172
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 20 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4833
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP20N20E
TMOS POWER FET

20 AMPERES
200 VOLTS
RDS(on) = 0.16 OHM

voltage transients.

G
TO220AB

Symbol
Value
Unit
DrainSource Voltage
VDSS
200
Vdc
VDGR
200
Vdc

VGS
VGSM
20
40
Vdc
Vpk
Drain Continuous
Continuous @ 100C
ID
ID
IDM
20
12
60
Adc

Derate above 25C
PD
125
1.0
Watts
W/C
TJ, Tstg
55 to 150

EAS
600
mJ

Junction to Ambient
RJC
RJA
1.00
62.5
C/W
TL
260
Rating
Apk
REV 2
4834
MTP20N20E
Characteristic
Symbol
Min
Typ
Max
Unit
200
263
Vdc
mV/C
10
100
100
nAdc
2.0
7.0
4.0
Vdc
mV/C
0.12
0.16
Ohm
3.84
3.36
gFS
8.0
11
mhos
Ciss
1880
2700
pF
Coss
378
535
Crss
68
100
td(on)
17
40
tr
86
180
td(off)
50
100
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 20 Adc)
(ID = 10 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 100 Vdc, ID = 20 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 160 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
tf
60
120
QT
54
75
Q1
12
Q2
24
Q3
22
1.0
0.82
1.35
trr
239
ta
136
tb
103
QRR
2.09
3.5
4.5
7.5
ns
nC


(IS = 20 Adc, VGS = 0 Vdc, TJ = 125C)

Fig re 14)
(See Figure
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4835
MTP20N20E
40
40
VGS = 10 V
8V
VDS 10 V
35
9V
TJ = 25C
7V
30
20
6V
10
TJ = 55C
25C
30
25
100C
20
15
10
5V
5
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
0
1
10
0.35
VGS = 10 V
0.30
TJ = 100C
0.25
0.20
0.15
25C
0.10
55C
0.05
4
12
20
28
16
24
32
36
40
0.17
TJ = 25C
0.16
0.15
0.14
VGS = 10 V
0.13
0.12
15 V
0.11
0.10
0
36
40
TJ = 125C
1000
1.2
0.8
100C
100
25C
10
1
25
0
25
50
75
100
125

Temperature
4836
32
VGS = 0 V
VGS = 10 V
ID = 10 A
1.6
0.4
50
12
16
20
24
28
10000
2.4
2.0

and Gate Voltage

(NORMALIZED)

and Temperature
150
50
150
100
200

MTP20N20E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
5000
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
4000
3000
Crss
Ciss
2000
1000
0
10
Coss
0
VGS
10
15
20
25
VDS
4837
10
Q1
150
VGS
Q2
120
90
6
ID = 20 A
TJ = 25C
60
30
2
Q3
0
1000
180
QT
10
VDS
30
20
40
50
0
60
VDD = 100 V
ID = 20 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
VDS , DRAINTOSOURCE VOLTAGE (VOLT)
MTP20N20E
100
tr
tf
td(off)
td(on)
10

10
100

20
16
VGS = 0 V
TJ = 25C
12
0
0.50 0.55
0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95

1.0
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4838
temperature.
(IDM), the energy rating is specified at rated continuous current
(ID), in accordance with industry custom. The energy rating
must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below
rated continuous ID can safely be assumed to equal the values indicated.
MTP20N20E
SAFE OPERATING AREA
10
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10 s
100 s
1 ms
10 ms
1.0
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
1.0
100
600
ID = 20 A
500
400
300
200
100
0
25
1000

Safe Operating Area
150
50
75
100
125


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4839
MOTOROLA
Data Sheet
V
MTP23P06V
Designer's
TMOS
TMOS POWER FET

23 AMPERES
60 VOLTS
RDS(on) = 0.120 OHM
TM


TMOS EFET
S
TO220AB

Rating
Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
15
25
Vdc
Vpk

ID
ID
IDM
23
15
81
Adc

Derate above 25C
PD
90
0.60
Watts
W/C
TJ, Tstg
EAS
55 to 175
794
mJ
RJC
RJA
1.67
62.5
C/W
TL
260

Apk
REV 1
4840
MTP23P06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
60.5
Vdc
mV/C
10
100
100
nAdc
2.0
2.8
5.3
4.0
Vdc
mV/C
0.093
0.12
Ohm
3.3
3.2
5.0
11.5
Ciss
1160
1620
Coss
380
530
Crss
105
210
td(on)
13.8
30
tr
98.3
200
td(off)
41
80
tf
62
120
QT
38
50
Q1
7.0
Q2
18
Q3
14
2.2
1.8
3.5
trr
142.2
ta
100.5
tb
41.7
QRR
0.804
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 11.5 Adc, TJ = 150C)
VDS(on)
(VDS = 10.9 Vdc, ID = 11.5 Adc)
Vdc
gFS
Mhos
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 23 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 23 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4841
MTP23P06V
40
VGS = 10V
TJ = 25C
40
8V
9V
7V
30
6V
20
10
VDS 10 V
35
50
5V
TJ = 55C
25C
30
100C
25
20
15
10
5
4V
0
TJ = 100C
25C
0.1
0.08
55C
0.06
0.04
0.02
5
10
15
20
25
30
35
40
45
0.12
0.12
TJ = 25C
0.115
0.11
0.105
VGS = 10 V
0.1
0.095
15 V
0.09
0.085
0.08

and Temperature
10
15
20
30
35
25
40
45
50

and Gate Voltage
1.8
100
VGS = 0 V
VGS = 10 V
ID = 11.5 A

(NORMALIZED)
0.14
1.4
VGS = 10 V
1.6
0.16
10
1.2
1
0.8
0.6
TJ = 125C
10
0.4
0.2
0
50
25
0
25
50
75
100 125
150

Temperature
4842
175
50
10
20
30
40
60

MTP23P06V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
4000
C, CAPACITANCE (pF)
Ciss
3000
VGS = 0 V
VDS = 0 V
TJ = 25C
Crss
2000
Ciss
1000
Coss
Crss
0
10
5
VGS
10
15
20
25
VDS
4843
30
QT
9
8
27
24
Q2
Q1
VGS
21
18
15
12
9
3
2
Q3
1
0
TJ = 25C
ID = 23 A
VDS
10
15
25
20
30
35
6
3
0
40
1000
t, TIME (ns)
10
MTP23P06V
TJ = 25C
ID = 23 A
VDD = 30 V
VGS = 10 V
100
tr
tf
td(off)
td(on)
10
1
1
10


100
25
TJ = 25C
VGS = 0 V
20
15
10
0.25
0.5
0.75
1.25
1.5
1.75
2.25
2.5
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4844
MTP23P06V
SAFE OPERATING AREA
800
VGS = 20 V
SINGLE PULSE
TC = 25C

100
100 s
10
1 ms
10 ms
dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
600
500
400
300
200
100
0
0.1
0.1
ID = 23 A
700
1
10
25
100
50
75
100
125
150
175

Safe Operating Area

1.00
D = 0.5
0.2
0.1
P(pk)
0.10
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4845
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP27N10E
TMOS POWER FET

27 AMPERES
100 VOLTS
RDS(on) = 0.07 OHM

voltage transients.

Device Marking: MTP27N10E
G
S
TO220AB

Symbol
Value
Unit
VDSS
100
Vdc
VDGR
100
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
27
17
95
Adc

Derate above 25C
PD
104
0.83
Watts
W/C
TJ, Tstg
55 to 150

EAS
109
mJ

RJC
RJA
1.2
62.5
C/W
TL
260
Rating
Apk
4846
MTP27N10E
Characteristic
Symbol
Min
Typ
Max
Unit
100
120
Vdc
mV/C
10
100
100
nAdc
2.0
3.1
7.0
4.0
Vdc
mV/C
0.058
0.07
2.3
2.0
gFS
6.0
11
mhos
pF
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS

IDSS
IGSS
Adc
(Cpk 2.0) (3)

(VGS = 10 Vdc, ID = 13.5 Adc)
(Cpk 2.0) (3)
(VGS = 10 Vdc, ID = 13.5 Adc, TJ = 125C)
VGS(th)
RDS(on)
Ohm
VDS(on)
Vdc
Input Capacitance
Output Capacitance
Vd VGS = 0 Vdc,
Vd
(VDS = 25 Vdc,
f = 1.0 MHz)
Ciss
1131
1580
Coss
468
660
Crss
186
370
td(on)
13
30

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 80 Vdc, ID = 27 Adc,
VGS = 10 Vdc)
tr
142
280
td(off)
29
60
tf
59
120
QT
41
60
Q1
9.0
Q2
25
Q3
22
1.0
0.94
1.5
trr
126
ta
98
tb
28
QRR
0.685
3.5
4.5
7.5
ns
nC

Forward OnVoltage

(IS = 27 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

Max limit Typ
Cpk =
3 x SIGMA
4847
MTP27N10E
60
60
TJ = 25C
9V
50
VDS 10 V
VGS = 10 V
40
8V
30
7V
20
6V
25C
50
100C
40
30
TJ = 55C
20
10
10
5V
0
0
0
3
4
5
6
7
8
10
0.14
VGS = 10 V
0.12
TJ = 100C
0.1
0.08
25C
0.06
55C
0.04
0.02
0
0
10
20
40
30
50
60
0.08
TJ = 25C
0.075
0.07
VGS = 10 V
0.065
0.06
0.055
15 V
0.05
0.045
0.04
0
10
20
30
40
50
60

and Gate Voltage
2.4
1000
VGS = 10 V
ID = 13.5 A
VGS = 0 V
TJ = 125C
1.8

(NORMALIZED)

and Temperature
2.2
2.0
10

4
5
6
7
8
9
1.6
1.4
1.2
1.0
0.8
0.6
100
100C
10
0.4
0.2
0
50
1
25
0
25
50
75
100
125

Temperature
4848
150
2
4
6
8
3
5
7
10

MTP27N10E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
3500
C, CAPACITANCE (pF)
3000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
2500
2000
Ciss
1500
1000
Crss
Coss
500
0
15
Crss
10
5
VGS
10
15
20
25
VDS
4849
60
TJ = 25C
ID = 27 A
54
QT
48
VGS
7
6
Q1
42
36
Q2
30
24
18
12
1
0
10
VDS
Q3
25
15
20
30
35
40
0
45
1000
t, TIME (ns)
10
MTP27N10E
VDD = 50 V
ID = 27 A
VGS = 10 V
TJ = 25C
100
tf
td(off)
td(on)
10
tr
10
100



30
VGS = 0 V
TJ = 25C
25
20
15
10
5
0
0.6
0.65
0.7 0.75 0.8 0.85 0.9 0.95 1.0 1.05

1.1
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4850
temperature.
MTP27N10E
SAFE OPERATING AREA
100
120
VGS = 20 V
SINGLE PULSE
TC = 25C
10

1000
10 s
100 s
1 ms
1.0
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.01
0.1
10
1.0
100
ID = 27 A
100
80
60
40
20
0
25
1000

Safe Operating Area
150
50
75
100
125


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
t1
t2
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4851
MOTOROLA
Designer's
Data Sheet
MTP30N06VL
TMOS V
TMOS POWER FET

30 AMPERES
60 VOLTS
RDS(on) = 0.050 OHM
TM


TMOS EFET
S
TO220AB

Rating
Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
30
20
105
Adc

Derate above 25C
PD
90
0.6
Watts
W/C
TJ, Tstg
EAS
55 to 175
154
mJ
RJC
RJA
1.67
62.5
C/W
TL
260

Apk
REV 3
4852
MTP30N06VL
ELECTRICAL CHARACTERISTICS (TJ = 25 C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
60
63
Vdc
mV/C
10
100
100
nAdc
1.0
1.5
4.0
2.0
Vdc
mV/C
0.033
0.05
Ohm
1.8
1.73
gFS
13
21
Mhos
Ciss
1130
1580
pF
Coss
360
500
Crss
95
190
td(on)
14
30
tr
260
520
td(off)
54
110
tf
108
220
QT
27
40
Q1
Q2
17
Q3
15
0.98
0.89
1.6
trr
86.4
ta
49.6
tb
36.8
QRR
0.228
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 5 Vdc, ID = 15 Adc, TJ = 150 C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time

VGS = 5 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 30 Adc,

VGS = 5 Vdc)
ns
nC

Forward OnVoltage

(IS = 30 Adc, VGS = 0 Vdc, TJ = 150 C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4853
MTP30N06VL
50
60
VGS = 10 V
8V
TJ = 25C
6V
5V
40
4V
30
20
3V
25C
100C
40
30
20
0
0
0.08
10
0.06
TJ = 100C
0.05
0.04
25C
0.03
0.02
55C
0.01
0
0
10
20
30
40
60
50
0.06
TJ = 25C
0.05
VGS = 5 V
0.04
10 V
0.03
0.02
0.01
0

and Temperature
10
20
30
40
50
60

and Gate Voltage
1000
VGS = 0 V
VGS = 5 V
ID = 15 A
TJ = 125C
1.4

(NORMALIZED)
0.07
1.6
VGS = 10 V
1.8
50
10
10
0
TJ = 55C
VDS 10 V
60
1.2
1
0.8
0.6
100
100C
10
0.4
0.2
0
50
1
25
25
50
75
100 125
150

Temperature
4854
175
30
10
20
40
50
60

MTP30N06VL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
5000
C, CAPACITANCE (pF)
4500 C
iss
4000
VDS = 0 V
VGS = 0 V
TJ = 25C
3500
3000
Crss
2500
2000
1500
Ciss
1000
500
Coss
Crss
0
10
5
VGS
0
VDS
10
15
20
25
4855
30
4.5
27
24
QT
3.5
VGS
Q2
Q1
21
18
2.5
15
12
1.5
Q3
1
0.5
0
10
15
6
3
VDS
0
TJ = 25C
ID = 30 A
0
25
20
1000
TJ = 25C
ID = 30 A
VDD = 30 V
VGS = 5 V
t, TIME (ns)
MTP30N06VL
tr
tf
100
td(off)
td(on)
10
1
1
10


100

30
25
TJ = 25C
VGS = 0 V
20
15
10
5
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4856
temperature.
MTP30N06VL
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
160
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100

1000
10 s
100 s
10
1 ms
10 ms
dc
1
0.1
10
ID = 30 A
140
120
100
80
60
40
20
0
100
25
50
75
100
125
150
175

Safe Operating Area

1.00
D = 0.5
0.2
0.1
P(pk)
0.05
0.10
0.02
0.01
SINGLE PULSE
t1
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4857
MOTOROLA
Designer's
Data Sheet
MTP30P06V
TMOS V
TMOS POWER FET

30 AMPERES
60 VOLTS
RDS(on) = 0.080 OHM
TM


TMOS EFET
S
TO220AB

Rating
Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
15
25
Vdc
Vpk

ID
ID
IDM
30
19
105
Adc

Derate above 25C
PD
125
0.83
Watts
W/C
TJ, Tstg
EAS
55 to 175
450
mJ
RJC
RJA
1.2
62.5
C/W
TL
260

Apk
REV 2
4858
MTP30P06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
62
Vdc
mV/C
10
100
100
nAdc
2.0
2.6
5.3
4.0
Vdc
mV/C
0.067
0.08
Ohm
2.0
2.9
2.8
5.0
7.9
Ciss
1562
2190
Coss
524
730
Crss
154
310
td(on)
14.7
30
tr
25.9
50
td(off)
98
200
tf
52.4
100
QT
54
80
Q1
9.0
Q2
26
Q3
20
2.3
1.9
3.0
trr
175
ta
107
tb
68
QRR
0.965
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 150C)
VDS(on)
(VDS = 8.3 Vdc, ID = 15 Adc)
Vdc
gFS
Mhos
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 30 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4859
MTP30P06V
60
60
TJ = 25C
40
30
6V
20
5V
10
0
7V
4V
0
25C
40
30
TJ = 55C
20
0.1
0.08
25C
0.06
55C
0.04
0.02
10
20
30
40
50
60
0.08
TJ = 25C
VGS = 10 V
0.07
15 V
0.06
0.05
0.04

and Temperature
10
20
30
40
50
60

and Gate Voltage
1.8
100
VGS = 0 V
VGS = 10 V
ID = 15 A
TJ = 125C

(NORMALIZED)
TJ = 100C
1.4
VGS = 10 V
1.6
0.12
50
12
10
100C
10
9V
VGS = 10V
50
VDS 10 V
8V
1.2
1
0.8
0.6
10
100C
0.4
0.2
0
50
25
0
25
50
75
100 125
150

Temperature
4860
175
50
60
10
20
30
40
70

MTP30P06V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
6000
Ciss
C, CAPACITANCE (pF)
5000
4000
VGS = 0 V
VDS = 0 V
TJ = 25C
Crss
3000
Ciss
2000
Coss
1000
Crss
0
10
5
VGS
10
15
20
25
VDS
4861
30
VGS
27
QT
24
8
Q2
Q1
21
18
15
12
VDS
1
0
TJ = 25C
ID = 30 A
Q3
10
20
30
40
50
6
3
0
60
1000
t, TIME (ns)
10
MTP30P06V
TJ = 25C
ID = 30 A
VDD = 30 V
VGS = 10 V
100
td(off)
tf
tr
td(on)
10
1
1
10


100

30
TJ = 25C
VGS = 0 V
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4862
MTP30P06V
SAFE OPERATING AREA
450
VGS = 20 V
SINGLE PULSE
TC = 25C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

1000
100
10 s
100 s
10
1 ms
10 ms
dc
ID = 30 A
400
350
300
250
200
150
100
50
0
1
0.1
1
10
25
100
50
75
100
125
150
175

Safe Operating Area

1.00
D = 0.5
0.2
0.1
0.10
P(pk)
0.05
0.02
0.01
t1
SINGLE PULSE
0.01
1.0E05
t2
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4863
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTP33N10E
TMOS POWER FET

33 AMPERES
100 VOLTS
RDS(on) = 0.06 OHM

voltage transients.

G
TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
VDGR
100
Vdc
GateSource Continuous
VGS
VGSM
20
40
Vdc
Vpk
Drain Voltage Continuous

Continuous @ 100C
ID
ID
IDM
33
20
99
Adc

Derate above 25C
PD
125
1.0
Watts
W/C
Apk
TJ, Tstg
55 to 150

EAS
545
mJ

Junction to Ambient
RJC
RJA
1.00
62.5
C/W
TL
260
REV 3
4864
MTP33N10E
Characteristic
Symbol
Min
Typ
Max
Unit
100
118
Vdc
mV/C
10
100
100
nAdc
2.0
7.0
4.0
Vdc
mV/C
0.04
0.06
Ohm
1.6
2.4
2.1
gFS
8.0
mhos
Ciss
1830
2500
pF
Coss
678
1200
Crss
559
1100
td(on)
18
40
tr
164
330
td(off)
48
100
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 33 Adc)
(ID = 16.5 Adc, TJ = 25C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 80 Vdc, ID = 33 Adc,
VGS = 10 Vdc)
tf
83
170
QT
52
110
Q1
12
Q2
32
Q3
24
1.0
0.98
2.0
trr
144
ta
108
tb
36
QRR
0.93
3.5
4.5
7.5
ns
nC


(IS = 33 Adc, VGS = 0 Vdc, TJ = 125C)

Fig re 14)
(See Figure
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4865
MTP33N10E
90
90
80
9V
70
60
8V
50
40
7V
30
20
6V
10
5V
2
4
6
8
3
5
7
TJ = 55C
25C
70
60
100C
50
40
30
20
10
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
0
0
VDS 10 V
80
VGS = 10 V
TJ = 25C
10
0.09
VGS = 10 V
0.08
TJ = 100C
0.07
0.06
0.05
25C
0.04
55C
0.03
0.02
6
12
18 24 30 36 42 48
54
66
60
0.053
TJ = 25C
0.051
0.049
0.047
VGS = 10 V
0.045
0.043
0.041
0.039
15 V
0.037
5
2.0
1.8
17
23
35 41
29
47
53
59
65

and Gate Voltage
10000
VGS = 0 V
VGS = 10 V
ID = 16.5 A
1.6

(NORMALIZED)

and Temperature
11
1.4
1.2
1.0
1000
TJ = 125C
100C
100
25C
0.8
0.6
50
25
0
25
50
75
100
125

Temperature
4866
150
10
20
30
50
70
40
60
80
90
100

MTP33N10E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
5000
4500
C, CAPACITANCE (pF)
4000
3500
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25C
Crss
3000
2500
Ciss
2000
1500
Coss
1000
500
0
10
Crss
0
5
VGS
10
15
20
25
VDS
4867
12
120
VGS
QT
100
10
Q2
8
80
Q1
60
40
20
Q3
2
0
1000
140
TJ = 25C
ID = 33 A
VDS
0
10
20
30
40
50
0
60
VDD = 50 V
ID = 33 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
14
MTP33N10E
tr
100
tf
td(off)
td(on)
10
10
100



33
VGS = 0 V
TJ = 25C
30
27
24
21
18
15
12
9
6
3
0
0.5
0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1.0
1.05
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4868
temperature.
MTP33N10E
SAFE OPERATING AREA
550
VGS = 20 V
SINGLE PULSE
TC = 25C
100

1000
100 s
10
1 ms
1.0
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.01
0.1
1.0
10
500
ID = 33 A
450
400
350
300
250
200
150
100
50
0
25
100

Safe Operating Area
150
50
75
100
125


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
t2
0.01
0.01
1.0E05
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
SINGLE PULSE
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
t, TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4869
MOTOROLA
Product Preview
MTP35N06ZL
HDTMOS E-FET.
TMOS POWER FET

35 AMPERES
60 VOLTS
RDS(on) = 26 m

voltage transients.
Temperature
Avalanche Mode
G
TO220AB
S

Rating
Symbol
Value
Unit
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
35
22.8
105
Adc

Derate above 25C
PD
94
0.63
Watts
W/C
TJ, Tstg
55 to 175

(VDD = 25 Vdc, VDS = 60 Vdc, VGS = 5.0 Vdc, Peak IL = 35 Apk, L = 0.3 mH, RG = 25 )
EAS
184
mJ

RJC
RJA
1.6
62.5
C/W
TL
260
Apk
4870
MTP35N06ZL
Characteristic
Symbol
Min
Typ
Max
Unit
60
52
Vdc
mV/C
10
100
5.0
Adc
1.0
1.5
4.0
2.0
Vdc
mV/C
22
26
0.78
0.7
1.1
1.0
gFS
10
12
mhos
Ciss
1600
pF
Coss
560
Crss
140
td(on)
40
OFF CHARACTERISTICS
(Cpk 3.0)
V(BR)DSS

IDSS
IGSS
Adc
(Cpk 3.0)
VGS(th)

(Cpk 2.0)
(VGS = 5.0 Vdc, ID = 11.5 Adc)
RDS(on)

(ID = 23 Adc)
(ID = 11.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time

5 0 Vdc,
Vdc
VGS(on) = 5.0
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 23 Adc,
VGS = 5.0 Vdc)
tr
250
td(off)
130
tf
170
QT
45
Q1
8.0
Q2
22
Q3
19
0.92
0.81
1.1
trr
43
ta
24
tb
20
QRR
0.055
3.5
4.5
7.5
ns
nC

Forward OnVoltage

(IS = 23 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4871
MOTOROLA
Designer's
Data Sheet
MTP36N06V
TMOS V
TMOS POWER FET

32 AMPERES
60 VOLTS
RDS(on) = 0.04 OHM
TM


TMOS EFET
S
TO220AB

Rating
Symbol
Value
Unit
60
Vdc
VDSS
VDGR
60
Vdc

VGS
VGSM
20
25
Vdc
Vpk
Drain Current Continuous @ 25 C

Drain Current Continuous @ 100 C
ID
ID
IDM
32
22.6
112
Adc
Total Power Dissipation @ 25 C

Derate above 25 C
PD
90
0.6
Watts
W/C
TJ, Tstg
EAS
55 to 175
205
mJ
RJC
RJA
1.67
62.5
C/W
TL
260

Apk
REV 2
4872
MTP36N06V
ELECTRICAL CHARACTERISTICS (TJ = 25 C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
60
61
Vdc
mV/C
10
100
100
nAdc
2.0
2.6
6.0
4.0
Vdc
mV/C
0.034
0.04
Ohm
1.25
1.54
1.47
gFS
5.0
7.83
mhos
Ciss
1220
1700
pF
Coss
337
470
Crss
74.8
150
td(on)
14
30
tr
138
270
td(off)
54
100
tf
91
180
QT
39
50
Q1
7.0
Q2
17
Q3
13
1.03
0.94
2.0
trr
92
ta
64
tb
28
QRR
0.332
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150 C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 32 Adc,

VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 32 Adc, VGS = 0 Vdc, TJ = 150 C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4873
MTP36N06V
72
TJ = 100C
VDS 10 V
7V
9V
72
VGS = 10 V
TJ = 25C
54
8V
6V
36
5V
18
25C
54
36
18
55C
4V
0
0.1
TJ = 100C
25C
0.04
TJ = 25C
0.044
0.06
VGS = 10 V
0.036
55C
0.02
0
0
0.052
0.08
18
36
54
72
0.028
15 V

and Temperature
18
36
54
72

and Gate Voltage
1.8
1000
VGS = 0 V
VGS = 10 V
ID = 16 A
TJ = 125C

(NORMALIZED)
VGS = 10 V
1.6
1.4
1.2
1
100
100C
10
25C
0.8
0.6
50
1
25
25
50
75
100
125
150

Temperature
4874
175
10
20
40
50
30
60

MTP36N06V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
4000
C, CAPACITANCE (pF)
VDS = 0 V
3000
VGS = 0 V
TJ = 25C
Ciss
2000
Ciss
Crss
1000
Coss
Crss
0
10
0
VGS
10
15
20
25
VDS
4875
QT
25
10
VGS
20
Q2
Q1
15
6
4
Q3
2
0
10
TJ = 25C
ID = 32 A
VDS
0
10
15
20
25
30
35
40
1000
TJ = 25C
ID = 32 A
VDD = 30 V
VGS = 10 V
t, TIME (ns)
30
12
MTP36N06V
tr
tf
100
td(off)
td(on)
10
1
1
10


100

32
TJ = 25C
VGS = 0 V
24
16
0
0.5 0.55
0.6 0.65
0.7 0.75
0.8 0.85 0.9
0.95
1.05
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4876
temperature.
MTP36N06V
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
225
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

1000
100
10 s
100 s
10
1 ms
10 ms
dc
1
0.1
175
150
125
100
75
50
25
0
100
10
ID = 32 A
200
25
50
75
100
125
175
150

Safe Operating Area

1.00
D = 0.5
0.2
0.1
P(pk)
0.10 0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4877
MOTOROLA
Data Sheet
HDTMOS E-FET.
Designer's
MTP50P03HDL
TMOS POWER FET

LOGIC LEVEL
50 AMPERES
30 VOLTS
RDS(on) = 0.025 OHM
This advanced highcell density HDTMOS power FET is

G
S

TO220AB

Symbol
Value
Unit
DrainSource Voltage
VDSS
30
Vdc
VDGR
30
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
50
31
150
Adc

Derate above 25C
PD
125
1.0
Watts
W/C
TJ, Tstg
55 to 150

EAS
1250
mJ

RJC
RJA
1.0
62.5
C/W
TL
260
Rating
Apk
REV 1
4878
MTP50P03HDL
Characteristic
Symbol
Min
Typ
Max
30
26
10
100
100
1.0
1.5
4.0
2.0
0.020
0.025
0.83
1.5
1.3
15
20
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS

IDSS

IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 3.0) (3)

(VGS = 5.0 Vdc, ID = 25 Adc)
(Cpk 3.0) (3)

(ID = 50 Adc)
(ID = 25 Adc, TJ = 125C)
(VDS = 5.0 Vdc, ID = 25 Adc)
VGS(th)
Vdc
RDS(on)
mV/C
Ohm
VDS(on)
Vdc
gFS
mhos
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vdc VGS = 0 Vdc,
Vdc
f = 1.0 MHz)
Ciss
3500
4900
Coss
1550
2170
Crss
550
770
td(on)
22
30
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5.0
5 0 Vdc,
Vdc
RG = 2.3 ))
Fall Time
Gate Charge
(S Figure
(See
Fi
8)
((VDS = 24 Vdc, ID = 50 Adc,

VGS = 5.0 Vdc)
tr
340
466
td(off)
90
117
tf
218
300
QT
74
100
Q1
13.6
Q2
44.8
Q3
35
2.39
1.84
3.0
trr
106
ta
58
tb
48
QRR
0.246
3.5
4.5
7.5
ns
nC

Forward OnVoltage

(S Figure
(See
Fi
15)
(IS =50 Adc, VGS = 0 Vdc)

(IS = 50 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

Max limit Typ
Cpk =
3 x SIGMA
4879
MTP50P03HDL
100
VGS = 10 V
8V
TJ = 25C
80
VDS 10 V
5V
4.5 V
6V
4V
60
3.5 V
40
3V
20
100
TJ = 55C
25C
100C
80
60
40
20
2.5 V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.3
2.7
3.1
3.5
3.9
VGS = 5.0 V
0.027
0.025
TJ = 100C
0.023
25C
0.021
0.019
55C
0.017
0
20
40
60
80
100
4.3
0.022
TJ = 25C
VGS = 5 V
0.021
0.020
0.019
0.018
0.017
10 V
0.016
0.015
20
40
60
80
100

and Temperature

and Gate Voltage
1.35
1.25
1.9
0.029
0.015
0
1.5
2.0
1000
VGS = 5 V
ID = 25 A
VGS = 0 V
I DSS, LEAKAGE (nA)

(NORMALIZED)
1.15
1.05
TJ = 125C
100
0.95
100C
0.85
50
4880
10
25
25
50
75
100
125
150
10
15
20
25

Temperature

30
MTP50P03HDL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
14000
VGS = 0 V
VDS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
12000
Ciss
10000
8000
6000 C
rss
Ciss
4000
2000
Crss
0
10
0
VGS
10
Coss
15
20
25
VDS
4881
30
QT
5
Q1
25
VGS
Q2
20
15
10
ID = 50 A
TJ = 25C
5
Q3
10
VDS
20
30
40
50
60
1000
t, TIME (ns)
MTP50P03HDL
ID = 50 A
TJ = 25C
tr
tf
td(off)
100
td(on)
0
80
70
VDD = 30 V
VGS = 10 V
10
10



these losses.
snappy.
50
VGS = 0 V
TJ = 25C
40
30
20
10
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
4882
MTP50P03HDL
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

discussed in AN569, Transient Thermal Resistance
(TJ(MAX) TC)/(RJC).

1000
VGS = 20 V
SINGLE PULSE
TC = 25C
100
100 s
1 ms
10
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
dc
1400
ID = 50 A
1200
1000
800
600
400
200
0
1.0
10
100
25
50
75
100
125
150

Safe Operating Area

4883

(NORMALIZED)
MTP50P03HDL
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.1
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4884
MOTOROLA
Product Preview
MTP52N06V
TMOS V
TMOS POWER FET

52 AMPERES
60 VOLTS
RDS(on) = 0.022 OHM
TM


S
TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
20
25
Vdc
Vpk

ID
ID
IDM
52
41
182
Adc

Derate above 25C
PD
165
1.10
Watts
W/C
TJ, Tstg
55 to 175

EAS
406
mJ

RJC
RJA
0.91
62.5
C/W
TL
260
Apk
4885
MTP52N06V
Characteristic
Symbol
Min
Typ
Max
Unit
60
TBD
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
TBD
4.0
Vdc
mV/C
0.019
0.022
Ohm
1.4
1.2
gFS
17
25
mhos
Ciss
1700
2380
pF
Coss
500
700
Crss
150
300
td(on)
15
30
tr
130
260
td(off)
68
140
tf
70
140
QT
70
80
Q1
10
Q2
30
Q3
20
1.0
0.9
1.5
trr
90
ta
80
tb
10
QRR
0.3
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 26 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 52 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 52 Adc, VGS = 0 Vdc, TJ = 150C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4886
MOTOROLA
Product Preview
MTP52N06VL
TMOS V
TMOS POWER FET

52 AMPERES
60 VOLTS
RDS(on) = 0.025 OHM
TM


S
TO220AB

Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
15
25
Vdc
Vpk

ID
ID
IDM
52
41
182
Adc

Derate above 25C
PD
165
1.10
Watts
W/C
TJ, Tstg
EAS
55 to 175
406
mJ
RJC
RJA
0.91
62.5
C/W
TL
260
Rating

Apk
4887
MTP52N06VL
Characteristic
Symbol
Min
Typ
Max
Unit
60
TBD
Vdc
mV/C
10
100
100
nAdc
1.0
1.5
TBD
2.0
Vdc
mV/C
0.022
0.025
Ohm
1.5
1.3
gFS
17
30
Mhos
Ciss
1600
2240
pF
Coss
550
770
Crss
170
340
td(on)
18
40
tr
370
740
td(off)
90
180
tf
170
340
QT
45
60
Q1
12
Q2
22
Q3
18
1.0
0.9
1.5
trr
93
ta
65
tb
28
QRR
0.3
3.5
4.5
7.5
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = .25 mAdc)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 5 Vdc, ID = 26 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time

VGS = 5 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 52 Adc,

VGS = 5 Vdc)
ns
nC

Forward OnVoltage

(IS = 52 Adc, VGS = 0 Vdc, TJ = 150 C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4888
MOTOROLA
Product Preview
MTP55N06Z
TMOS E-FET.
TMOS POWER FET

55 AMPERES
60 VOLTS
RDS(on) = 16 m

voltage transients.
Temperature
Avalanche Mode
G
TO220AB
S

Rating
Symbol
Value
Unit
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
20
30
Vdc
Vpk

ID
ID
IDM
55
35.5
165
Adc

Derate above 25C
PD
136
0.91
Watts
W/C
TJ, Tstg
55 to 175

(VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25 )
EAS
454
mJ

RJC
RJA
1.1
62.5
C/W
TL
260
Apk
4889
MTP55N06Z
Characteristic
Symbol
Min
Typ
Max
Unit
60
53
Vdc
mV/C
10
100
5.0
Adc
2.0
3.0
6.0
4.0
Vdc
mV/C
14
16
0.825
0.74
1.2
1.0
gFS
12
15
mhos
Ciss
1390
1950
pF
Coss
520
730
Crss
119
238
td(on)
27
54
OFF CHARACTERISTICS
(Cpk 2.0)
V(BR)DSS

IDSS
IGSS
Adc
(Cpk 2.0)
VGS(th)

(Cpk 2.0)
RDS(on)

(ID = 30 Adc)
(ID = 15 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS(on) = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
tr
157
314
td(off)
116
232
tf
126
252
QT
40
56
Q1
7.0
Q2
18
Q3
15
0.93
0.82
1.1
trr
57
ta
32
tb
25
QRR
0.11
3.5
4.5
7.5
ns
nC

Forward OnVoltage

(IS = 30 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4890
MOTOROLA
Data Sheet
HDTMOS E-FET.
Designer's
MTP60N06HD
TMOS POWER FET

60 AMPERES
60 VOLTS
RDS(on) = 0.014 OHM
This advanced highcell density HDTMOS power FET is


G
TO220AB
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
20
30
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
60
42.3
180
Adc

Derate above 25C
PD
150
1.0
Watts
W/C
TJ, Tstg
55 to 175

EAS
540
mJ

Junction to Ambient
RJC
RJA
1.0
62.5
C/W
TL
260
Rating
Apk
REV 2
4891
MTP60N06HD
Characteristic
Symbol
Min
Typ
Max
60
71
10
100
100
2.0
3.0
7.0
4.0
0.011
0.014
1.0
0.9
15
20
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS

IDSS

IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 3.0) (3)

(Cpk 3.0) (3)

(ID = 60 Adc)
(ID = 30 Adc, TJ = 125C)
VGS(th)
Vdc
RDS(on)
Ohm
VDS(on)
(VDS = 5.0 Vdc, ID = 30 Adc)
mV/C
Vdc
gFS
mhos
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vdc VGS = 0 Vdc,
Vdc
f = 1.0 MHz)
Ciss
1950
2800
Coss
660
924
Crss
147
300
td(on)
14
26
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 ))
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 48 Vdc, ID = 60 Adc,

VGS = 10 Vdc)
tr
197
394
td(off)
50
102
tf
124
246
QT
51
71
Q1
12
Q2
24
Q3
21
0.99
0.89
1.2
trr
60
ta
36
tb
24
QRR
0.143
3.5
4.5
7.5
ns
nC

Forward OnVoltage

(S Fi
(See
Figure 15)

(IS = 60 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

Max limit Typ
Cpk =
3 x SIGMA
4892
MTP60N06HD
120
120
9V
80
TJ = 25C
60
6V
40
5V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
100C
25C
TJ = 55C
2.8
3.6
4.4
5.2
6.0
6.8
TJ = 100C
0.016
0.014
25C
0.012
0.010
55C
0.008
20
30
40
50
60
70
80
90
100 110 120
7.6
0.0132
TJ = 25C
0.0128
0.0124
0.0120
VGS = 10 V
0.0116
0.0112
0.0108
15 V
0.0104
0.0100
10
20
30
40
50
60
70
80
90
100 110 120

and Temperature

and Gate Voltage
1000
1.8
1.6
VGS = 0 V
VGS = 10 V
ID = 30 A
TJ = 125C
I DSS, LEAKAGE (nA)

(NORMALIZED)
40
0.018
10
60
0
2.0
5.0
VGS = 10 V
80
0.020
0.006
100
20
100
20
VDS 10 V
7V
8V
VGS = 10 V
1.4
1.2
1.0
100
100C
25C
10
0.8
0.6
50
1
25
25
50
75
100
125
150
10
20
30
40
50

Temperature

60
4893
MTP60N06HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
5000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
C, CAPACITANCE (pF)
4000
3000
Crss
Ciss
2000
Coss
1000
Crss
0
10
5
VGS
10
15
20
25
VDS
4894
60
QT
10
50
VGS
40
Q1
Q2
30
20
ID = 60 A
TJ = 25C
10
2
Q3
0
VDS
16
24
32
40
48
0
56
1000
VDD = 30 V
ID = 60 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTP60N06HD
tr
tf
100
td(off)
td(on)
10
10


100

these losses.
snappy.
60
50
VGS = 0 V
TJ = 25C
40
30
20
10
0
0.5
0.6
0.7
0.8
0.9
1.0
4895
MTP60N06HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

discussed in AN569, Transient Thermal Resistance
(TJ(MAX) TC)/(RJC).

1000
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100
100 s
10
1 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
4896
1.0
10 ms
dc
10
600
ID = 60 A
500
400
300
200
100
0
100
25
50
75
100
125
150

Safe Operating Area


(NORMALIZED)
MTP60N06HD
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4897
MOTOROLA
MTP75N03HDL
HDTMOS E-FET
TMOS POWER FET

LOGIC LEVEL
75 AMPERES
RDS(on) = 9.0 mOHM
25 VOLTS

This new energy efficient design also offers a draintosource
and PWM motor controls, and inductive loads. The avalanche

SPICE Parameters Available
G
TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
25
Vdc
VDGR
25
Vdc

GateSource Voltage Single Pulse (tp 10 ms)
VGS
15
20
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
75
59
225
Adc

Derate above 25C
PD
150
1.0
Watts
W/C
TJ, Tstg
55 to 175

EAS
280
mJ

Junction to Ambient
RJC
RJA
1.0
62.5
C/W
TL
260
Apk
REV 2
4898
MTP75N03HDL
Characteristic
Symbol
Min
Typ
Max
25
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mA)
V(BR)DSS
Vdc
mV/C

IDSS
IGSS
Adc
100
500
100
1.0
1.5
2.0
nAdc
(Cpk 3.0) (3)
VGS(th)

(Cpk 2.0) (3)
(VGS = 5.0 Vdc, ID = 37.5 Adc)
RDS(on)

(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 125C)
VDS(on)
Vdc
mV/C
m
6.0
9.0
0.68
0.6
gFS
15
55
mhos
Ciss
4025
5635
pF
Coss
1353
1894
Crss
307
430
td(on)
24
48
tr
493
986
td(off)
60
120
tf
149
300
QT
61
122
Q1
14
28
Q2
33
66
Q3
27
54
0.97
0.87
1.1
trr
58
ta
27
tb
30
QRR
0.088
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5.0
5 0 Vdc,
Vdc
Rg = 4.7 )
Fall Time
Gate Charge
((VDS = 24 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc)
ns
nC

Forward OnVoltage

(IS = 75 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4899
MTP75N03HDL
VGS = 10 V
5V
8V
120
150
4.5 V TJ = 25C
150
4V
6V
90
3.5 V
60
3V
30
VDS 10 V
120
90
60
100C
TJ = 55C
2.5 V
0
0.2
0.4 0.6 0.8

1
1.2
1.4 1.6
1.8
0
1.5
TJ = 100C
25C
55C
0.004
0.002
30
60
90
120
150
VGS = 5 V
0.006
2
2.5
3
3.5
4
4.5
0.01
0.009
TJ = 25C
0.008
0.007
VGS = 5 V
0.006
10 V
0.005
0.004
50
100
75

and Temperature

and Gate Voltage
25
10000
1.6
1.2
0.8
125
150
TJ = 125C
VGS = 10 V
ID = 37.5 A

(NORMALIZED)
0.008
25C
30
100C
1000
100
10
0.4
25C
VGS = 0 V
50
25
0
25
50
75
100
125

Temperature
4900
150
5
10
15
20
25
30

MTP75N03HDL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
15000
C, CAPACITANCE (pF)
12000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
9000
Crss
Ciss
6000
Coss
3000
0
10
Crss
5
0
VGS
10
15
20
25
VDS
4901
28
24
QT
20
5
Q2
Q1
VGS
16
12
3
TJ = 25C
ID = 75 A
4
VDS
Q3
0
0
10
50
20
30
40
60
0
70
10000
t, TIME (ns)
MTP75N03HDL
tr
1000
TJ = 25C
ID = 75 A
VDD = 15 V
VGS = 5 V
tf
td(off)
td(on)
100
10
1
10
100



these losses.
snappy.
75
TJ = 25C
VGS = 0 V
60
45
30
15
0
0.5
0.6
0.7
0.8
0.9
SAFE OPERATING AREA
4902
MTP75N03HDL
SAFE OPERATING AREA
(TJ(MAX) TC)/(RJC).
280
1000
VGS = 20 V
SINGLE PULSE
TC = 25C

100
100 s
1 ms
10
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
dc
10
100
ID = 75 A
240
200
160
120
80
40
0
25
50
75
100
125
150

Safe Operating Area

4903
MTP75N03HDL
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4904
MOTOROLA
Data Sheet
HDTMOS E-FET
Designer's
MTP75N05HD
TMOS POWER FET

75 AMPERES
RDS(on) = 9.5 m
50 VOLTS

This new energyefficient design also offers a draintosource
and PWM motor controls, and other inductive loads. The avalanche

SPICE Parameters Available
Diode Exhibits High Speed, Yet Soft Recovery
G
TO220AB

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
50
Vdc
VDGR
50
Vdc
VGS
20
Vdc

ID
ID
IDM
75
65
225
Adc

Derate above 25C
PD
150
1
Watts
W/C
TJ, Tstg
55 to 175

(VDD = 25 Vdc, VGS = 10 Vpk, IL = 75 Apk, L = 0.177 mH, RG = 25 )
EAS
500
mJ

RJC
RJA
1.00
62.5
C/W
TL
260
Apk
REV 2
4905
MTP75N05HD
Characteristic
Symbol
Min
Typ
Max
Unit
50
54.9
Vdc
mV/C
10
100
100
nAdc
2.0
6.3
4.0
Vdc
mV/C
7.0
9.5
0.86
0.64
gFS
15
mhos
Ciss
2600
2900
pF
Coss
1000
1100
Crss
230
275
td(on)
15
30
tr
170
340
td(off)
70
140
tf
100
200
QT
71
100
Q1
13
Q2
33
Q3
26
0.97
0.88
1.1
trr
57
ta
40
tb
17
QRR
0.17
3.5
4.5
7.5
OFF CHARACTERISTICS
(Cpk 2.0)(3)

(VGS = 0 V, ID = 250 Adc)
V(BR)DSS

(VDS = 50 Vdc, VGS = 0)
(VDS = 50 Vdc, VGS = 0, TJ = 150C)
IDSS
IGSS
Adc
(Cpk 1.5)(3)

(VGS = 10 Vdc, ID = 37.5 Adc)
(Cpk 3.0)(3)

(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 150C)
VGS(th)
RDS(on)
mW
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0,

f = 1.0 MHz)
(Cpk 2.0)
2 0)(2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 40 Vdc, ID = 75 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage
(IS = 75 Adc, VGS = 0)

(IS = 75 Adc, VGS = 0, TJ = 150C)
(Cpk 10)(2)

((IS = 37.5 Adc, VGS = 0,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

Max limit Typ
Cpk =
3 x SIGMA
4906
MTP75N05HD
TYPICAL ELECTRICAL CHARACTERISTICS(1)
160
160
TJ = 25C
120
100
80
6V
60
40
5V
20
0
0.5
1.5
2.5
3.5
60
TJ = 55C
100C
40
25C
0
140
160
0.012
TJ = 100C
0.01
25C
0.008
0.006
55C
0.004
20
40
60
80
100
120
140
0.009
TJ = 25C
0.008
VGS = 10 V
0.007
15 V
0.006
0.005
20
40
60
80
100
120

and Temperature

and Gate Voltage
10000
VGS = 0 V
VGS = 10 V
ID = 37.5 A
1.5
I DSS, LEAKAGE (nA)

(NORMALIZED)
80
4.5
VGS = 10 V
100
0.014
0.002
120
20
VDS 10 V
140
140
7V
VGS = 10 V
1000
TJ = 125C
100
100C
10
0.5
25C
0
50
25
0
25
50
75
100
125

Temperature
150
15
10
20
25 30
35 40
45
50

(1)Pulse Tests: Pulse Width 250 s, Duty Cycle 2%.
4907
MTP75N05HD

readily achievable with boardmounted components. Most
switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
8000
VDS = 0
VGS = 0
TJ = 25C
C, CAPACITANCE (pF)
7000
6000
Ciss
5000
4000
Crss
Ciss
3000
2000
Coss
1000
0
10
0
VGS
10
15
20
25
VDS
4908
60
QT
10
50
VGS
40
Q2
Q1
6
30
20
VDS
TJ = 25C
ID = 75 A
2
0
Q3
25
50
10
0
75
1000
t, TIME (ns)
12
MTP75N05HD
TJ = 25C
ID = 75 A
VDD = 35 V
VGS = 10 V
100
tr
tf
td(off)
td(on)
10
10
100



these losses.
snappy.
40
80
60
30
di/dt = 300 A/s
TJ = 25C
VGS = 0 V
70
50
40
30
20
10
STANDARD CELL DENSITY

trr
HIGH CELL DENSITY
trr
tb
ta
20
10
0
10
20
30
0
0
0.1
0.2 0.3
0.4 0.5
0.6 0.7 0.8
0.9
40
120 100 80
60 40 20
0
t, TIME (ns)
20
40
60
80
4909
MTP75N05HD
SAFE OPERATING AREA
time (tr,tf) does not exceed 10 s. In addition the total power
(TJ(MAX) TC)/(RJC).
100
500
VGS = 20 V
SINGLE PULSE
TC = 25C

1000
10 s
100 s
10
1 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
dc
1
10
100
ID = 75 A
400
300
200
100
25

Safe Operating Area
50
75
100
125
150
175


(NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

RJC = 1.0C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
4910
MOTOROLA
Data Sheet
HDTMOS E-FET
Designer's
MTP75N06HD
TMOS POWER FET

75 AMPERES
RDS(on) = 10.0 mOHM
60 VOLTS

This new energy efficient design also offers a draintosource
and PWM motor controls, and inductive loads. The avalanche

D
G
TO220AB
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc

GateSource Voltage Single Pulse
VGS
20
30
Vdc
Vpk

ID
ID
IDM
75
50
225
Adc

Derate above 25C
PD
150
1.0
Watts
W/C
TJ, Tstg
55 to 175

EAS
500
mJ

RJC
RJA
1.0
62.5
C/W
TL
260
Rating
Apk
REV 1
4911
MTP75N06HD
Characteristic
Symbol
Min
Typ
Max
Unit
60
68
60.4
10
100
5.0
100
2.0
3.0
8.38
4.0
8.3
10
0.7
0.53
0.9
0.8
gFS
15
32
mhos
pF
OFF CHARACTERISTICS
(Cpk 2.0) (3)

V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 5.0) (3)

(VGS = 10 Vdc, ID = 37.5 Adc)
(Cpk 2.0) (3)

(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 125C)
VGS(th)
Vdc
RDS(on)
VDS(on)
mV/C
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Ciss
2800
3920
Coss
928
1300
Crss
180
252
td(on)
18
26

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 75 Adc,
VGS = 10 Vdc)
tr
218
306
td(off)
67
94
tf
125
175
QT
71
100
Q1
16.3
Q2
31
Q3
29.4
0.97
0.88
1.1
trr
56
ta
44
tb
12
QRR
0.103
3.5
7.5
ns
nC

Forward OnVoltage

(IS = 75 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

Max limit Typ
Cpk =
3 x SIGMA
4912
MTP75N06HD
150
7V
100
75
6V
50
25
0
VDS 10 V
125
100
5V
75
50
25C
100C
25
TJ = 55C
0
0.5
1.5
TJ = 25C
VGS = 10 V
0.014
0.016
TJ = 100C
0.012
0.010
25C
0.008
55C
0.006
0.004
0
50
25
100
75
125
150
0.012
TJ = 25C
0.011
0.010
VGS = 10 V
0.009
15 V
0.008
0.007
0.006
0
25
50
75
100
125
150

and Temperature

and Gate Voltage
1000
1.9
VGS = 0 V
VGS = 10 V
ID = 37.5 A
TJ = 125C
1.6
I DSS, LEAKAGE (nA)

(NORMALIZED)
9V
125
150
8V
VGS = 10 V
TJ = 25C
1.3
100
100C
10
25C
0.7
50
25
25
50
75
100
125
150
10
20
30
40
50

Temperature

60
4913
MTP75N06HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
7000
VDS = 0 V
VGS = 0 V
TJ = 25C
6000
C, CAPACITANCE (pF)
Ciss
5000
4000
3000
Ciss
Crss
2000
Coss
1000
Crss
0
10
5
VGS
10
15
20
25
VDS
4914
60
QT
10
50
VGS
Q1
40
Q2
30
20
ID = 75 A
TJ = 25C
10
2
Q3
0
10
VDS
20
30
40
50
60
70
0
80
1000
VDS = 30 V
ID = 75 A
VGS = 10 V
TJ = 25C
tr
t, TIME (ns)
12
MTP75N06HD
tf
100
td(off)
td(on)
10
10


100

these losses.
snappy.
75
VGS = 0 V
TJ = 25C
50
25
0
0.5
0.58
0.66
0.74
0.82
0.9
0.98
4915
MTP75N06HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
100
100 s
10
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
4916
1.0
dc

500
1000
1
0.1
ID = 75 A
375
250
125
0
10
100
25
50
75
100
125
150

Safe Operating Area

MTP75N06HD
(NORMALIZED)

1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4917
MOTOROLA
Product Preview
MTP2955V
TMOS V

TMOS POWER FET

12 AMPERES
60 VOLTS
RDS(on) = 0.200 OHM
TM


S
TO220AB

Rating
Symbol
Value
Unit
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
15
25
Vdc
Vpk

ID
ID
IDM
12
8.0
42
Adc

Derate above 25C
PD
60
0.40
Watts
W/C
TJ, Tstg
55 to 175

EAS
216
mJ

RJC
RJA
2.5
62.5
C/W
TL
260
Apk
4918
MTP2955V
Characteristic
Symbol
Min
Typ
Max
Unit
60
TBD
Vdc
mV/C
10
100
100
nAdc
2.0
2.8
TBD
4.0
Vdc
mV/C
0.185
0.200
Ohm
2.9
2.8
gFS
3.0
5.0
mhos
Ciss
500
700
pF
Coss
200
280
Crss
40
80
td(on)
11
20
tr
38
80
td(off)
18
40
tf
26
50
QT
15
20
Q1
4.0
Q2
7.0
Q3
6.0
1.8
TBD
3.0
trr
114
ta
86
tb
28
QRR
0.553
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
((VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 12 Adc, VGS = 0 Vdc, TJ = 150C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4919
MOTOROLA
Data Sheet
V
MTP3055V
Designer's
TMOS
TMOS POWER FET

12 AMPERES
60 VOLTS
RDS(on) = 0.15 OHM
TM

TMOS EFET

TO220AB
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
20
25
Vdc
Vpk

ID
ID
IDM
12
7.3
37
Adc

Derate above 25C
PD
48
0.32
Watts
W/C
TJ, Tstg
55 to 175

EAS
72
mJ

RJC
RJA
3.13
62.5
C/W
TL
260
Rating
Apk
REV 2
4920
MTP3055V
Characteristic
Symbol
Min
Typ
Max
Unit
60
65
Vdc
mV/C
10
100
100
nAdc
2.0
2.7
5.4
4.0
Vdc
mV/C
0.10
0.15
Ohm
1.3
2.2
1.9
gFS
4.0
5.0
mhos
Ciss
410
500
pF
Coss
130
180
Crss
25
50
td(on)
7.0
10
tr
34
60
td(off)
17
30
tf
18
50
QT
12.2
17
Q1
3.2
Q2
5.2
Q3
5.5
1.0
0.91
1.6
trr
56
ta
40
tb
16
QRR
0.128
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 12 Adc, VGS = 0 Vdc, TJ = 150C)

(See Figure
Fig re 15)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4921
MTP3055V
VGS = 10 V
9V
TJ = 25C
20
24
8V
24
7V
16
12
6V
8
5V
VDS 10 V
TJ = 55C
20
25C
100C
16
12
8
4
4
4V
0
0.25
0.20
TJ = 100C
0.15
25C
0.10
55C
0.05
12
8
16
20
24
10
0.15
TJ = 25C
0.14
0.13
0.12
VGS = 10 V
0.11
0.10
15 V
0.09
0.08

and Temperature
12
16
8
20
24

and Gate Voltage
1.6
100
VGS = 0 V
VGS = 10 V
ID = 6 A

(NORMALIZED)
VGS = 10 V
1.4
0.30
1.2
1.0
10
TJ = 125C
0.8
0.6
50
25
0
25
50
75
100 125
150

Temperature
4922
175
10
30
40
20
50
60

MTP3055V

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1200
VDS = 0 V
C, CAPACITANCE (pF)
1000
VGS = 0 V
TJ = 25C
Ciss
800
600
Crss
Ciss
400
Coss
200
Crss
0
10
0
VGS
10
15
20
25
VDS
4923
60
QT
10
50
Q1
VGS
Q2
40
30
20
ID = 12 A
10
TJ = 25C
Q3
0
VDS
5
10
11
12
0
13
1000
t, TIME (ns)
12
MTP3055V
VDD = 30 V
ID = 12 A
VGS = 10 V
TJ = 25C
100
tr
td(off)
tf
10
td(on)
1
1
10


100

12
dIS/dt = 100 A/s
VDD = 25 V
TJ = 25C
0.12
10
QRR , STORED CHARGE (C)
0.13
0.11
0.10
0.09
0.08
10
12
VGS = 0 V
TJ = 25C
8
6
4
2
0
0.50 0.55 0.60
0.65 0.70 0.75 0.80 0.85 0.90 0.95
1.0
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4924
MTP3055V
SAFE OPERATING AREA
75
VGS = 20 V
SINGLE PULSE
TC = 25C
10 s
10
100 s
1 ms
1.0
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
50
25
0
10
1.0
ID = 12 A

100
100
25
50
75
100
125
175
150

Safe Operating Area


1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
t1
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4925
MOTOROLA
Data Sheet
V
MTP3055VL
Designer's
TMOS
TMOS POWER FET

12 AMPERES
60 VOLTS
RDS(on) = 0.18 OHM
TM


TMOS EFET

TO220AB
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc

VGS
VGSM
15
20
Vdc
Vpk

ID
ID
IDM
12
8.0
42
Adc

Derate above 25C
PD
48
0.32
Watts
W/C
Apk
TJ, Tstg
55 to 175

(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG =25 )
EAS
72
mJ

RJC
RJA
3.13
62.5
C/W
TL
260
REV 2
4926
MTP3055VL
Characteristic
Symbol
Min
Typ
Max
Unit
60
62
Vdc
mV/C
10
100
100
nAdc
1.0
1.6
3.0
2.0
Vdc
mV/C
0.12
0.18
Ohm
1.6
2.6
2.5
gFS
5.0
8.8
mhos
Ciss
410
570
pF
Coss
114
160
Crss
21
40
td(on)
9.0
20
tr
85
190
td(off)
14
30
tf
43
90
QT
8.1
10
Q1
1.8
Q2
4.2
Q3
3.8
0.97
0.86
1.3
trr
55.7
ta
37
tb
18.7
QRR
0.116
3.5
4.5
7.5
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 5
5.0
0 Vdc,
Vdc
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 48 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc)
ns
nC


(IS = 12 Adc, VGS = 0 Vdc, TJ = 150C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4927
MTP3055VL
24
16
4.5 V
4V
12
3.5 V
8
3V
20
100C
16
12
8
0
2.0
3.5
4.0
4.5
5.5
5.0
0.20
TJ = 100C
0.14
25C
55C
0.08
20
8
12
16
24
TJ = 25C
0.22
0.17
5V
0.12
0.07
VGS = 10 V
100
1.5
25
25
50
75
100
125
150
175
8
12
16
20
24
VGS = 0 V
VGS = 5 V
ID = 6 A
0.5

and Gate Voltage
2.0
1.0
6.0
0.27

and Temperature
4928
3.0
VGS = 5 V
0
50
2.5
0.26

(NORMALIZED)
TJ = 55C
25C
0.32
0.02
VDS 10 V
2.5 V
20
24
5V
VGS = 10 V
TJ = 25C
TJ = 125C
10
100C
1.0
0.1
30
10
20
40
50

Temperature

60
MTP3055VL

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1400
1200
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
TJ = 25C
Ciss
1000
800
600
Ciss
Crss
400
Coss
200
Crss
0
10
0
VGS
10
15
20
25
VDS
4929
60
QT
50
40
VGS
30
Q2
Q1
2
20
ID = 12 A
TJ = 25C
0
Q3
2
VDS
4
10
0
10
1000
VDD = 30 V
ID = 12 A
VGS = 5 V
TJ = 25C
t, TIME (ns)
MTP3055VL
tr
tf
100
td(off)
10
td(on)
1
1
10


100

12
10
VGS = 0 V
TJ = 25C
8
6
4
2
0
0.50 0.55 0.60 0.65 0.70
0.75 0.80 0.85 0.90 0.95
1.0
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
4930
MTP3055VL
SAFE OPERATING AREA
75
VGS = 5 V
SINGLE PULSE
TC = 25C

100
10 s
10
100 s
1 ms
10 ms
1.0
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
ID = 12 A
50
25
0.1
0
0.1
1.0
25
100
10
50
75
100
125
175
150

Safe Operating Area


1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E05
t1
t2
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4931
MOTOROLA
Advance Information
MTSF1P02HD


G
PCMCIA cards
SINGLE TMOS
POWER FET
1.8 AMPERES
20 VOLTS
RDS(on) = 0.16 OHM
D
Micro8
Source
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
Rating
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
PD
8.0
Vdc
1.8
1.6
14.4
Adc
1.8
14.3
Watts
mW/C
PD
0.78
6.25
Watts
mW/C
TJ, Tstg
55 to 150
Symbol
Typ.
Max.
Unit
RJA
RJA
55
125
70
160
C/W
Apk
THERMAL RESISTANCE
Rating
Thermal Resistance Junction to Ambient, PCB Mount (1)
* Negative signs for PChannel device omitted for clarity.

(1) When mounted on 1 inch square FR4 or G10 board (VGS = 4.5 V, @ Steady State)
DEVICE MARKING
AB
Device
MTSF1P02HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
4000 units
REV 1
4932
MTSF1P02HD
Symbol
Characteristic
Min
Typ
Max
Unit
20
12.8
1.0
10
100
0.6
0.8
2.5
120
160
160
190
gFS
2.0
4.0
Mhos
Ciss
440
pF
Coss
300
Crss
150
td(on)
15
tr
35
td(off)
55
tf
75
td(on)
20
tr
93
td(off)
50
tf
75
QT
11
22
Q1
0.7
Q2
5.5
Q3
3.8
1.24
0.9
2.0
trr
120
ta
33
tb
87
QRR
0.223
OFF CHARACTERISTICS
(Cpk 2.0)

(1) (3)
V(BR)DSS

IDSS
GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 2.0)
(3)

(VGS = 4.5 Vdc, ID = 1.8 Adc)
(VGS = 2.7 Vdc, ID = 0.9 Adc)
(3)
(1)
VGS(th)
Vdc
RDS(on)
mV/C
m
Input Capacitance
Output Capacitance
(VDS = 10 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDS = 10 Vdc, ID = 1.8 Adc,

VGS = 4.5 Vdc, RG = 6.0 ) (1)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 10 Vdc, ID = 0.9 Adc,

(V
VGS = 2.7 Vdc, RG = 6.0 ) (1)
Fall Time
Gate Charge
((VDS = 10 Vdc, ID = 1.8 Adc,
VGS = 4.5 Vdc)
ns
nC

Forward OnVoltage
(IS = 1.8 Adc, VGS = 0 Vdc) (1)

(IS = 1.8 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 1.8 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (1)
VSD
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4933
MTSF1P02HD
VGS = 4.5 V
2.7 V
2V
1.6
1.8 V
TJ = 25C
1.6
1.7 V
1.9 V
VDS 10 V
1.2
1.2
1.6 V
0.8
TJ = 100C
0.8
1.5 V
0.4
25C
0.4
55C
1.4 V
0
1.2
0.4
0.8
1.6
0
0.4
ID = 1.8 A
TJ = 25C
0.4
0.3
0.2
0.1
0
0
0.6
0.5
0.18
TJ = 25C
2.7 V
0.16
0.14
4.5 V
0.12
0.1
0
0.5
1.5


and Gate Voltage
2.0
1000
VGS = 0 V
VGS = 2.7 V
ID = 1.8 A
TJ = 125C
1.5

(NORMALIZED)
0.8
1.2
1.6
1.0
0.5
0
50
4934
25
25
50
75
100
125
150
100
100C
10
25C
12
16

Temperature

20
MTSF1P02HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2000
C, CAPACITANCE (pF)
Ciss
VDS = 0 V
TJ = 25C
VGS = 0 V
1500
1000
Crss
Ciss
500
Coss
Crss
0
10
0
VGS
10
15
20
VDS
4935
18
QT
5
4
15
12
VGS
VDS
9
Q1
Q2
2
1
0
Q3
ID = 1.8 A
TJ = 25C
3
0
12
1000
VDD = 10 V
ID = 1.8 A
VGS = 4.5 V
TJ = 25C
t, TIME (ns)
MTSF1P02HD
100
tf
td(off)
tr
td(on)
10
1
10


100

snappy.

these losses.
1.6
VGS = 0 V
TJ = 25C
1.2
0.8
0.4
0
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
4936
MTSF1P02HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
10
360
VGS = 8 V
SINGLE PULSE
TC = 25C

100
1 ms
10 ms
1
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
280
240
200
160
120
80
40
0
100

Safe Operating Area
VDD = 16 V
VGS = 5 V
IL = 6 A
L = 20 mH
320
25
50
75
100
125
150

4937
MTSF1P02HD

THERMAL RESISTANCE
1000
100
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
1
t1
t2
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+01
1.0E+02
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4938
MTSF1P02HD
Micro8
1.60 (.063)
1.50 (.059)
2.05 (.080)
1.95 (.077)
PIN
NUMBER 1
4.10 (.161)
3.90 (.154)
1.85 (.072)
1.65 (.065)
0.35 (.013)
0.25 (.010)
5.55 (.218)
5.45 (.215)
12.30
11.70
(.484)
(.461)
3.50 (.137)
3.30 (.130)
1.60 (.063)
1.50 (.059)
TYP.
FEED DIRECTION
8.10 (.318)
7.90 (.312)
1.50 (.059)
1.30 (.052)
SECTION AA
5.40 (.212)
5.20 (.205)
SECTION BB
NOTES:
18.4 (.724)
MAX.
NOTE 3
13.2 (.52)
12.8 (.50)
330.0
(13.20)
MAX.
NOTES:
50.0
(1.97)
MIN.
14.4 (.57)
12.4 (.49)
NOTE 4
4939
MOTOROLA
Product Preview
MTSF2P02HD


Miniature Micro8 Surface Mount Package Saves Board Space G
PCMCIA cards
SINGLE TMOS
POWER FET
2.4 AMPERES
20 VOLTS
RDS(on) = 0.090 OHM
D
Micro8
Source
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
Rating
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
PD
8.0
Vdc
2.4
2.2
19
Adc
1.8
14.3
Watts
mW/C
PD
0.78
6.25
Watts
mW/C
TJ, Tstg
55 to 150
Typ.
Max.
Unit
55
125
70
160
C/W
Apk
THERMAL RESISTANCE
Rating
Symbol

RJA
RJA
* Negative signs for PChannel device omitted for clarity.
DEVICE MARKING
AD
Device
MTSF2P02HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
4000 units
REV 1
4940
MTSF2P02HD
Symbol
Characteristic
Min
Typ
Max
Unit
20
TBD
TBD
TBD
2.0
25
TBD
100
0.7
TBD
TBD
TBD
TBD
90
130
gFS
2.6
TBD
Mhos
Ciss
TBD
pF
Coss
TBD
Crss
TBD
td(on)
TBD
tr
TBD
td(off)
TBD
tf
TBD
td(on)
TBD
tr
TBD
td(off)
TBD
tf
TBD
QT
TBD
TBD
Q1
TBD
Q2
TBD
Q3
TBD
TBD
TBD
1.0
trr
TBD
ta
TBD
tb
TBD
QRR
TBD
OFF CHARACTERISTICS
(Cpk 2.0)

(1) (3)
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 2.0)

(VGS = 4.5 Vdc, ID = 2.4 Adc)
(VGS = 2.7 Vdc, ID = 1.2 Adc)
(Cpk 2.0)
(3)
(3)
(1)
VGS(th)
Vdc
RDS(on)
mV/C
m
Input Capacitance
Output Capacitance
(VDS = 15 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDS = 10 Vdc, ID = 2.4 Adc,

VGS = 4.5 Vdc, RG = 6.0 ) (1)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 10 Vdc, ID = 1.2 Adc,

(V
VGS = 2.7 Vdc, RG = 6.0 ) (1)
Fall Time
Gate Charge
((VDS = 16 Vdc, ID = 2.4 Adc,
VGS = 4.5 Vdc)
ns
nC

Forward OnVoltage
(IS = 2.4 Adc, VGS = 0 Vdc) (1)

(IS = 2.4 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 2.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (1)
VSD
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4941
MTSF2P02HD
Micro8
1.60 (.063)
1.50 (.059)
2.05 (.080)
1.95 (.077)
PIN
NUMBER 1
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
5.55 (.218)
5.45 (.215)
12.30
11.70
(.484)
(.461)
3.50 (.137)
3.30 (.130)
1.60 (.063)
1.50 (.059)
TYP.
FEED DIRECTION
8.10 (.318)
7.90 (.312)
NOTES:
1.50 (.059)
1.30 (.052)
SECTION AA
5.40 (.212)
5.20 (.205)
SECTION BB
18.4 (.724)
MAX.
NOTE 3
13.2 (.52)
12.8 (.50)
330.0
(13.20)
MAX.
NOTES:
4942
50.0
(1.97)
MIN.
14.4 (.57)
12.4 (.49)
NOTE 4
MOTOROLA
Advance Information
MTSF3N02HD


G
PCMCIA cards
SINGLE TMOS
POWER MOSFET
3.8 AMPERES
20 VOLTS
RDS(on) = 0.040 OHM
D
Micro8
Source
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
Rating
Symbol
Value
Unit
VDSS
VDGR
20
Vdc
20
Vdc
VGS
ID
ID
IDM
PD
8.0
Vdc
3.8
3.5
30
Adc
1.8
14.3
Watts
mW/C
PD
0.78
6.25
Watts
mW/C
TJ, Tstg
55 to 150
Typ.
Max.
Unit
55
125
70
160
C/W
Apk
THERMAL RESISTANCE
Rating
Symbol

RJA
RJA
DEVICE MARKING
AC
Device
MTSF3N02HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
4000 units
REV 1
4943
MTSF3N02HD
Characteristic
Symbol
Min
Typ
Max
Unit
20
16
1.0
25
100
0.7
0.78
2.65
30
40
40
50
gFS
4.0
7.5
Mhos
Ciss
475
pF
Coss
255
Crss
110
td(on)
9.5
tr
45
td(off)
50
tf
62
td(on)
19
tr
130
td(off)
38
tf
47
QT
12
17
Q1
1.0
Q2
5.0
Q3
3.5
0.83
0.68
1.0
trr
46
ta
23
tb
23
QRR
0.05
OFF CHARACTERISTICS
(Cpk 2.0)

(1) (3)
V(BR)DSS

IDSS
GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 2.0)

(VGS = 4.5 Vdc, ID = 3.8 Adc)
(VGS = 2.7 Vdc, ID = 1.9 Adc)
(Cpk 2.0)
(3)
VGS(th)
(3)
Vdc
RDS(on)
(1)
mV/C
m
Input Capacitance
Output Capacitance
(VDS = 15 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDS = 10 Vdc, ID = 3.8 Adc,

VGS = 4.5 Vdc, RG = 6 ) (1)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 10 Vdc, ID = 1.9 Adc,

VGS = 2.7 Vdc, RG = 6 ) (1)
Fall Time
Gate Charge
((VDS = 16 Vdc, ID = 3.8 Adc,
VGS = 4.5 Vdc)
ns
ns
nC

Forward OnVoltage
(IS = 3.8 Adc, VGS = 0 Vdc) (1)

(IS = 3.8 Adc, VGS = 0 Vdc, TJ = 125C)

(IS = 3
3.8
8 Ad
Adc, VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (1)
VSD
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4944
MTSF3N02HD
8
1.7 V
4
3
1.5 V
6
5
4
3
25C
1
0.4
0.8
1.6
1.2
TJ = 55C
1
0
VDS 10 V
1.9 V
100C
1
1.6
1.8
VGS = 3.8 V
TJ = 25C
0.05
0.04
0.03
0.02
0.01
0
6
2
4
0.06
TJ = 25C
0.05
VGS = 2.7 V
0.04
4.5 V
0.03
0.02
0.01


and Gate Voltage
1000
2.0
VGS = 4.5 V
ID = 1.9 A
VGS = 0 V
1.5
1.4
0.06
1.0
0.5
0
50
1.2
TJ = 25C
VGS = 10 V
4.5 V
2.9 V
2.5 V
2.3 V
2.1 V
100
100C
10
0.1
25
25
50
75
100
125
150
TJ = 125C
25C
12
16
20

with Temperature

versus Voltage
4945
MTSF3N02HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
2500
TJ = 25C
VGS = 0 V
Ciss
C, CAPACITANCE (pF)
2000
Crss
1500
1000
Ciss
Coss
500
0
0
VGS
Crss
4
12
16
20
VDS
4946
18
QT
VGS
VDS
4
3
Q1
15
12
9
Q2
2
1
0
ID = 3.8 A
TJ = 25C
Q3
3
6
9
0
15
12
1000
VDD = 10 V
ID = 3.8 A
VGS = 4.5 V
TJ = 25C
100
t, TIME (ns)
MTSF3N02HD
tr
tf
td(off)
td(on)
10
10

100


these losses.
snappy.
VGS = 0 V
TJ = 25C
3
0
0.4
0.5
0.6
0.7
0.8
0.9
4947
MTSF3N02HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

maximum simultaneous draintosource voltage and drain current that a transistor can handle safely when it is forward biased.
Curves are based upon maximum peak junction temperature
and a case temperature (TC) of 25C. Peak repetitive pulsed
power limits are determined by using the thermal response data
in conjunction with the procedures discussed in AN569, Tran-
100
10
VGS = 8 V
SINGLE PULSE
TC = 25C
sient Thermal Resistance General Data and Its Use.

(I DM ) nor rated voltage (V DSS ) is exceeded, and that the
transition time (t r, t f ) does not exceed 10 s. In addition
the total power averaged over a complete switching cycle
must not exceed (T J(MAX) T C )/(RJC ).
100 s
1 ms
10 ms
1
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100

Safe Operating Area
4948
MTSF3N02HD

THERMAL RESISTANCE
1000
100
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
1
t1
t2
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+01
1.0E+02
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4949
MTSF3N02HD
Micro8
1.60 (.063)
1.50 (.059)
2.05 (.080)
1.95 (.077)
PIN
NUMBER 1
4.10 (.161)
3.90 (.154)
1.85 (.072)
1.65 (.065)
0.35 (.013)
0.25 (.010)
5.55 (.218)
5.45 (.215)
12.30
11.70
(.484)
(.461)
3.50 (.137)
3.30 (.130)
1.60 (.063)
1.50 (.059)
TYP.
FEED DIRECTION
8.10 (.318)
7.90 (.312)
1.50 (.059)
1.30 (.052)
SECTION AA
5.40 (.212)
5.20 (.205)
SECTION BB
NOTES:
18.4 (.724)
MAX.
NOTE 3
13.2 (.52)
12.8 (.50)
330.0
(13.20)
MAX.
NOTES:
4950
50.0
(1.97)
MIN.
14.4 (.57)
12.4 (.49)
NOTE 4
MOTOROLA
Advance Information
MTSF3N03HD


G
PCMCIA cards
SINGLE TMOS
POWER MOSFET
3.7 AMPERES
30 VOLTS
RDS(on) = 0.040 OHM
D
Micro8
Source
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
Rating
Symbol
Value
Unit
VDSS
VDGR
30
Vdc
30
Vdc
VGS
ID
ID
IDM
PD
20
Vdc
3.7
3.2
30
Adc
1.8
14.3
Watts
mW/C
PD
0.78
6.25
Watts
mW/C
TJ, Tstg
55 to 150
Symbol
Typ.
Max.
Unit
RJA
RJA
55
125
70
160
C/W
Apk
THERMAL RESISTANCE
Rating
(1) When mounted on 1 inch square FR4 or G10 board (VGS = 10 V, @ Steady State)
DEVICE MARKING
AA
Device
MTSF3N03HDR2
Reel Size
Tape Width
Quantity
13
12 mm embossed tape
4000 units
REV 1
4951
MTSF3N03HD
Characteristic
Symbol
Min
Typ
Max
Unit
30
27
1.0
25
100
1.0
1.5
4.5
35
45
40
60
gFS
2.0
Mhos
Ciss
420
pF
Coss
190
Crss
65
td(on)
7.0
tr
19
td(off)
32
tf
36
td(on)
7.0
tr
11
td(off)
29
tf
23
QT
18.5
26
Q1
1.4
Q2
5.5
Q3
7.1
0.82
0.7
1.0
trr
28
ta
14
tb
14
QRR
0.028
OFF CHARACTERISTICS
(Cpk 2.0)

(1) (3)
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
(Cpk 2.0)

(VGS = 10 Vdc, ID = 3.7 Adc)
(VGS = 4.5 Vdc, ID = 1.9 Adc)
(Cpk 2.0)
(3)
VGS(th)
(3)
Vdc
RDS(on)
mV/C
m
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDS = 15 Vdc, ID = 3.7 Adc,

VGS = 10 Vdc, RG = 6 ) (1)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 1.9 Adc,

VGS = 4.5 Vdc, RG = 6 ) (1)
Fall Time
Gate Charge
((VDS = 24 Vdc, ID = 3.7 Adc,
VGS = 10 Vdc)
ns
ns
nC

Forward OnVoltage
(IS = 3.7 Adc, VGS = 0 Vdc) (1)

(IS = 3.7 Adc, VGS = 0 Vdc, TJ = 125C)

(IS = 3
3.7
7 Ad
Adc, VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (1)
VSD
Vdc
ns

Max limit Typ
Cpk =
3 x SIGMA
4952
MTSF3N03HD
VGS = 10 V
4.5 V
6
TJ = 25C
VDS 10 V
2.9 V
3.3 V
3.1 V
2.7 V
3
2
2.5 V
2.3 V
5
4
3
100C
2
25C
TJ = 55C
2.1 V
0
0.5
1.5
2.5
3.5
ID = 3.7 A
TJ = 25C
0.5
0.4
0.3
0.2
0.1
0
0
4
6
8
10
0.06
TJ = 25C
0.055
VGS = 4.5
0.05
0.045
0.04
10 V
0.035
0.03
0


and Gate Voltage
1000
2.0
VGS = 0 V
VGS = 10 V
ID = 1.9 A
TJ = 125C
1.5
0.6
1.0
0.5
0
50
1.5
100
100C
10
25C
1
0.1
25
25
50
75
100
125
150
10
15
20
30
25

with Temperature

versus Voltage
4953
MTSF3N03HD

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
1500
C, CAPACITANCE (pF)
1200
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
900
Crss
600
Ciss
Coss
300
Crss
0
10
5
VGS
10
15
20
25
30
VDS
4954
30
QT
25
10
20
8
VDS
VGS
15
10
4
Q1
Q2
2
0
Q3
3
ID = 3.7 A
TJ = 25C
12
15
6
9
1000
0
21
18
VDD = 15 V
ID = 3.7 A
VGS = 10 V
TJ = 25C
100
t, TIME (ns)
12
MTSF3N03HD
tf
td(off)
tr
10
td(on)
10

100


these losses.
snappy.
VGS = 0 V
TJ = 25C
3
0.5
0.6
0.7
0.8
0.9
4955
MTSF3N03HD
di/dt = 300 A/s

trr
High Cell Density

trr
tb
ta
t, TIME
SAFE OPERATING AREA

(TJ(MAX) TC)/(RJC).
VGS = 20 V
SINGLE PULSE
TC = 25C
10

250
100
100 s
1 ms
10 ms
1
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10

Safe Operating Area
4956
200
150
100
50
0
100
VDD = 30 V
VGS = 5 V
IL = 9 A
L = 5 mH
25
50
75
100
125
150

MTSF3N03HD

THERMAL RESISTANCE
1000
100
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
1
t1
t2
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
t, TIME (s)
1.0E+00
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+01
1.0E+02
1.0E+03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4957
MTSF3N03HD
Micro8
1.60 (.063)
1.50 (.059)
2.05 (.080)
1.95 (.077)
PIN
NUMBER 1
4.10 (.161)
3.90 (.154)
1.85 (.072)
1.65 (.065)
0.35 (.013)
0.25 (.010)
5.55 (.218)
5.45 (.215)
12.30
11.70
(.484)
(.461)
3.50 (.137)
3.30 (.130)
1.60 (.063)
1.50 (.059)
TYP.
FEED DIRECTION
8.10 (.318)
7.90 (.312)
1.50 (.059)
1.30 (.052)
SECTION AA
5.40 (.212)
5.20 (.205)
SECTION BB
NOTES:
18.4 (.724)
MAX.
NOTE 3
13.2 (.52)
12.8 (.50)
330.0
(13.20)
MAX.
NOTES:
4958
50.0
(1.97)
MIN.
14.4 (.57)
12.4 (.49)
NOTE 4
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTV6N100E
TMOS POWER FET
6.0 AMPERES
1000 VOLTS
RDS(on) = 1.5 OHM

The D3PAK package has the capability of housing the largest chip
size of any standard, plastic, surface mount power semiconductor.
This allows it to be used in applications that require surface mount
components with higher power and lower RDS(on) capabilities. This
high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced TMOS EFET is
designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drainto
source diode with a fast recovery time. Designed for high voltage,
high speed switching applications in surface mount PWM motor
controls and both acdc and dcdc power supplies. These devices
are particularly well suited for bridge circuits where diode speed and
G
CASE 43301, Style 2
D3PAK Surface Mount

S
Fast Recovery Diode
Specifically Designed Leadframe for Maximum Power Dissipation
Available in 24 mm, 13inch/500 Unit Tape & Reel, Add RL Suffix to Part Number
Rating
Symbol
Value
Unit
1000
Vdc
VDSS
VDGR
1000
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
6.0
4.2
18
Adc

Derate above 25C
PD
178
1.43
2.0
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150

Apk
mJ
720
RJC
RJA
RJA
0.70
62.5
35
C/W
TL
260
4959
MTV6N100E
Characteristic
Symbol
Min
Typ
Max
Unit
1000
1270
10
100
100
2.0
3.0
7.0
4.0
mV/C
1.28
1.5
Ohm
7.9
14.4
9.5
gFS
4.0
7.2
mhos
Ciss
3000
4210
pF
Coss
219
440
Crss
43
90
td(on)
27
45
tr
29
65
td(off)
93
170
tf
43
95
QT
66
100
Q1
12.5
Q2
25.9
Q3
26
0.81
0.64
1.0
trr
735
ta
188
tb
547
QRR
4.7
4.5
13
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 500 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125C)

((IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4960
MTV6N100E
12
12
VGS = 10 V
VDS 10 V
6V
5V
8
6
4
100C
8
6
25C
4
2
2
0
10
TJ = 25C
10
TJ = 55C
4V
2
6
10
14
18
8
12
16
4
0
2.0
20
2.4
2.9
TJ = 100C
2.5
2.1
1.7
25C
1.3
0.9
55C
0.5
0
4
6
8
10
4.0
4.4
4.8
5.2
12
TJ = 25C
1.52
1.48
1.44
1.40
VGS = 10 V
1.36
15 V
1.32
1.28
1.24
0
7
8
9
4
5
6
10
11
12

and Gate Voltage
2.8
100000
VGS = 10 V
ID = 3 A
VGS = 0 V
TJ = 125C
10000

(NORMALIZED)
3.6
1.56

and Temperature
2.4
3.2

VGS = 10 V
2.8
2.0
100C
1000
1.6
1.2
25C
10
0.8
0.4
50
100
25
0
25
50
75
100
125

Temperature
150
100
200
300
400
500
600
700
800
900 1000

4961
MTV6N100E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
7000
Ciss
VGS = 0 V
10000
TJ = 25C
5000
4000
Crss
Ciss
3000
2000
1000
0
5
VGS
4962
TJ = 25C
1000
Coss
100
Crss
Coss
Crss
0
10
VGS = 0 V
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
6000
VDS = 0 V
10
15
20
25
VDS
10
10
100
1000
400
ID = 6 A
TJ = 25C
14
12
350
300
QT
10
250
VGS
8
Q1
200
Q2
150
100
2
0
10
50
VDS
Q3
20
30
40
50
60
70
1000
VDD = 480 V
ID = 6 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
16
MTV6N100E
100
tr
10
10


100
6
IS = 6 A
dlS/dt = 100 A/s
VDD = 25 V
TJ = 25C
tf
td(on)
td(off)
VGS = 0 V
TJ = 25C
5
4
3
2
1
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78
0.82
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4963
MTV6N100E
SAFE OPERATING AREA
800
VGS = 20 V
SINGLE PULSE
TC = 25C
10
10 s
100 s
1.0
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
100
10
ID = 6 A

100
700
600
500
400
300
200
100
0
25
1000
50
75
100
125
150

Safe Operating Area


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E05
t1
t2
1.0E03
1.0E04
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4964
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTV10N100E
TMOS POWER FET

10 AMPERES
1000 VOLTS
RDS(on) = 1.3 OHM

D
NChannel
G
CASE 43301, Style 2
D3PAK Surface Mount

S
Fast Recovery Diode
Rating
Derate above 25C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 10 Apk, L = 10 mH, RG = 25 )
Symbol
Value
Unit
VDSS
VDGR
1000
Vdc
1000
Vdc
VGS
ID
ID
IDM
20
Vdc
10
6.2
30
Adc
PD
250
2.0
3.57
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
Apk
C
mJ
500
RJC
RJA
RJA
0.5
62.5
35
C/W
TL
260
4965
MTV10N100E
Characteristic
Symbol
Min
Typ
Max
Unit
1000
1254
10
100
100
2.0
3.0
7.0
4.0
mV/C
1.07
1.3
Ohm
11
15
15.3
gFS
8.0
10
mhos
Ciss
3500
5600
pF
Coss
264
530
Crss
52
90
td(on)
29
60
tr
57
120
td(off)
118
240
tf
70
140
QT
100
120
Q1
18.4
Q2
33
Q3
36.7
0.885
0.8
1.1
trr
885
ta
220
tb
667
QRR
8.0
4.5
13
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 500 Vdc, ID = 10 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 10 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 10 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4966
MTV10N100E
20
TJ = 25C
VDS 10 V
VGS = 10 V
6V
16
12
5V
8
16
12
8
100C
25C
TJ = 55C
4V
0
12
16
0
2.8
20
VGS = 10 V
TJ = 100C
1.6
25C
1.2
0.8
55C
0.4
0
12
3.6
4.8
5.2
5.6
16
20
TJ = 25C
1.4
1.32
VGS = 10 V
1.24
15 V
1.16
1.08
1.0
12
16
20

and Temperature

and Gate Voltage
2.8
100000
VGS = 10 V
ID = 5 A
VGS = 0 V
TJ = 125C
10000
2

(NORMALIZED)
4.4
1.48
2.4

2.4
3.2
1.6
1.2
0.8
100
10
0.4
0
50
100C
1000
25
25
50
75
100
125
150
25C
100 200
300
400
500
600
700
800

Temperature

900 1000
4967
MTV10N100E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
8000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
TJ = 25C
Ciss
6000
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
7000
10000
VGS = 0 V
5000
Crss
4000
Ciss
3000
2000
1000
Coss
100
Crss
Coss
1000
Crss
0
10
0
VGS
10
15
20
25
10
100
1000
VDS
4968
10
560
QT
12
480
10
400
VGS
320
Q1
Q2
240
TJ = 25C 160
ID = 10 A
80
4
2
0
VDS
Q3
0
10
20
30
40
50
60
70
80
90
1000
t, TIME (ns)
14
MTV10N100E
VDD = 480 V
ID = 10 A
VGS = 10 V
TJ = 25C
100
td(off)
tf
tr
td(on)
0
100
10
10


10
TJ = 25C
VGS = 0 V
IS = 10 A
dlS/dt = 100 A/s
VDD = 25 V
TJ = 25C
10
100
10
0
0.5
0.66
0.82
0.58
0.74
0.9
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4969
MTV10N100E
SAFE OPERATING AREA
10
500
10 s
VGS = 20 V
SINGLE PULSE
TC = 25C

100
100 s
1 ms
10 ms
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
100
400
300
200
100
1000
25
50
75
100
125
150

Safe Operating Area

1.0
dc
ID = 10 A
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P(pk)
0.01
SINGLE PULSE
t1
t2
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4970
MOTOROLA
Advance Information
MTV16N50E
TMOS E-FET.
TMOS POWER FET

16 AMPERES
500 VOLTS
RDS(on) = 0.40 OHM

speed switching applications in power supplies, converters, PWM
voltage transients.
Fast Recovery Diode
D
NChannel
G
CASE 43301, Style 2
D3PAK Surface Mount
S

Rating
Derate above 25C
Symbol
Value
Unit
VDSS
VDGR
500
Vdc
500
Vdc
VGS
ID
ID
IDM
20
Vdc
16
9.0
60
Adc
PD
180
1.4
2.0
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
Apk
C
mJ
860
RJC
RJA
RJA
0.7
62.5
35
C/W
TL
260
4971
MTV16N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
520
250
1000
100
2.0
3.2
7.0
4.0
mV/C
0.32
0.40
Ohm
6.7
5.6
gFS
5.0
mhos
Ciss
3200
4480
pF
Coss
400
560
Crss
320
448
td(on)
28
60
tr
80
160
td(off)
80
160
tf
60
120
QT
65
Q1
17
Q2
47
Q3
34
1.0
0.9
1.6
trr
390
ta
245
tb
145
QRR
5.35
5.0
13
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 Vdc, ID = 16 Adc,

VGS = 10 Vdc
Vdc,
RG = 4.7 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 16 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 16 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4972
MTV16N50E
16
14
12
10
8
5V
6
4
2
12
10
8
100C
6
4
10
25C
TJ = 55C
0
0.6
0.5
0.4
25C
0.3
0.2
55C
0.1
0.0
5
25
10
15
20
30
35
0.4
TJ = 25C
0.35
VGS = 10 V
0.3
15 V
0.25
0.2
0.15
25
10
15
20
30
35

and Gate Voltage
100000
2.5
10

and Temperature
VGS = 0 V
VGS = 10 V
ID = 8 A
TJ = 125C
10000

(NORMALIZED)
TJ = 100C
2.0
VGS = 10 V
14
0.8
0.7
16
4V
0
VDS 10 V
18
6V
20
7V
VGS = 10 V
9V
TJ = 25C
20
18
1.5
100C
1000
1.0
0.5
0
50
25
0
25
50
100
75
125
150

Temperature
25C
100
10
100
200
300
400
500

4973
MTV16N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
7000
VDS = 0 V
10000
VGS = 0 V
TJ = 25C
VGS = 0 V
TJ = 25C
5000
4000
Crss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
6000 Ciss
Ciss
3000
2000
Ciss
1000
Coss
100
Crss
Coss
1000
0
10
Crss
5
0
VGS
10
10
15
20
25
Figure 9a. Low Voltage Capacitance Variation
4974
10
100
1000
VDS
15
500
QT
300
Q2
1000
td(off)
td(on)
200
6
TJ = 25C
ID = 16 A
3
Q3
0
TJ = 25C
ID = 16 A
VDD = 250 V
VGS = 10 V
400
VGS
Q1
10000
t, TIME (ns)
12
MTV16N50E
10
20
40
50
60
70
80
90
tr
100
VDS
30
100
0
100
tf
10
1
10
100


1000
14
TJ = 25C
VGS = 0 V
12
10
8
6
4
2
0
0.2
0.6
0.4
0.8
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4975
MTV16N50E
SAFE OPERATING AREA
900
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10
100 s
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
10
100
700
600
500
400
300
200
100
0
25
1000

50
75
100
125
150

Safe Operating Area
1
ID = 16 A
800

D = 0.5
0.2
0.1
0.1
0.05
0.02
P(pk)
0.01
0.01
SINGLE PULSE
t1
t2
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4976
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTV20N50E
TMOS POWER FET
20 AMPERES
500 VOLTS
RDS(on) = 0.240 OHM

D
NChannel
G
CASE 43301, Style 2
D3PAK Surface Mount

S
Fast Recovery Diode
Rating
Symbol
Value
Unit
VDSS
VDGR
500
Vdc
500
Vdc

VGS
20
40
Vdc

ID
ID
IDM
20
14.1
60
Adc

Derate above 25C
PD
250
2.0
3.57
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150

Apk
mJ
2000
RJC
RJA
RJA
0.5
62.5
35
C/W
TL
260
4977
MTV20N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
583
10
100
100
2.0
3.0
7.0
4.0
mV/C
0.23
0.24
Ohm
4.75
6.0
6.0
gFS
11
16.2
mhos
Ciss
3880
6950
pF
Coss
452
920
Crss
96
140
td(on)
29
55
tr
90
165
td(off)
97
190
tf
84
170
QT
100
132
Q1
20
Q2
44
Q3
36
0.916
0.81
1.1
trr
431
ta
272
tb
159
QRR
6.67
4.5
13
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 Vdc, ID = 20 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4978
MTV20N50E
40
7V
VDS
8V
32
40
VGS = 10 V
TJ = 25C
6V
24
16
5V
w 10 V
32
24
100C
16
25C
TJ = 55C
0
10
12
14
16
18
0
2.5
20
4.5
5.5
VGS = 10 V
0.5
TJ = 100C
0.4
0.3
25C
0.2
55C
0.1
0
0
10
30
20
40
6.5
0.32
TJ = 25C
0.30
0.28
0.26
VGS = 10 V
0.24
15 V
0.22
0.2

and Temperature
10
20
30
40

and Gate Voltage
2.4
10000
VGS = 10 V
ID = 10 A
VGS = 0 V
TJ = 125C

(NORMALIZED)
3.5
0.6
2.0
1.6
1.2
0.8
1000
100C
100
10
25C
0.4
0
50
1
25
0
25
50
75
100
125

Temperature
150
50
100 150 200 250 300 350 400 450

500

4979
MTV20N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
9000
10000
8000
TJ = 25C
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
Ciss
7000
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
6000
5000
Ciss
Crss
4000
3000
Ciss
1000
Coss
100
2000
1000
0
10
0
VGS
Crss
Coss
Crss
10
15
20
25
10
100
1000
VDS
4980
10
QT
8
400
VGS
Q1
Q2
300
200
ID = 20 A
TJ = 25C
10
20
100
VDS
Q3
0
1000
500
30
40
50
60
70
80
90
0
100
tf
td(on)
10
1
10
100

20
IS = 20 A
dlS/dt = 100 A/s
VDD = 50 V
TJ = 25C
6
5
tr
100

4
3
2
1
0
td(off)
VDD = 250 V
ID = 20 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
10
MTV20N50E
10
12
14
16
18
20
16
TJ = 25C
VGS = 0 V
12
0
0.5 0.54 0.58 0.62 0.66 0.7 0.74 0.78 0.82 0.86 0.9
0.94
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4981
MTV20N50E
SAFE OPERATING AREA
2000
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10
100 s
1 ms
10 ms
1.0
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
10
1.0
100
ID = 20 A
1600
1200
800
400
0
25
1000

Safe Operating Area

1.0
50
75
100
125
150

D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P(pk)
0.01
SINGLE PULSE
t1
t2
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4982
MOTOROLA
Advance Information
MTV25N50E
TMOS E-FET.
TMOS POWER FET

25 AMPERES
500 VOLTS
RDS(on) = 0.200 OHM

D
NChannel
G
CASE 43301, Style 2
D3PAK Surface Mount

S
Fast Recovery Diode
Rating
Derate above 25C
Symbol
Value
Unit
VDSS
VDGR
500
Vdc
500
Vdc
VGS
ID
ID
IDM
20
Vdc
25
15.8
88
Adc
PD
250
2.0
Watts
W/C
TJ, Tstg
EAS
55 to 150
Apk
mJ
938
RJC
RJA
RJA
0.5
62.5
35
C/W
TL
260
4983
MTV25N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
0.51
10
100
100
2.0
2.9
7.0
4.0
mV/C
0.19
0.2
Ohm
5.4
6.0
5.3
gFS
11
17
mhos
Ciss
4700
6580
pF
Coss
520
728
Crss
200
280
td(on)
37
70
tr
137
280
td(off)
118
240
tf
112
230
QT
132
180
Q1
29
Q2
63
Q3
61
0.9
0.79
1.1
trr
501
ta
332
tb
170
QRR
9.42
5.0
13
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 12.5 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 Vdc, ID = 25 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 25 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 25 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4984
MTV25N50E
50
7V
VDS
8V
9V
40
30
50
VGS = 10 V
TJ = 25C
6V
20
10
5V
w 10 V
40
30
100C
20
25C
10
TJ = 55C
4V
0
12
16
0.35
0.30
0.25
25C
0.20
0.15
0.10
55C
0.05
0
10
20
30
40
50
2.5
0.28
TJ = 25C
0.26
0.24
VGS = 10 V
15 V
0.22
0.20
0.18

and Temperature
10
20
30
40
50

and Gate Voltage
10000
VGS = 0 V
VGS = 10 V
ID = 12.5 A
TJ = 125C
100C

(NORMALIZED)
TJ = 100C
2.0
VGS = 10 V
0.45
0.40
20
1000
1.5
1.0
100
25C
0.5
0
50
0
50
100
150

Temperature
10
100
200
300
400
500

4985
MTV25N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
10000
9000
VDS = 0 V
100000
VGS = 0 V
TJ = 25C
8000
7000
Crss
6000
5000
Ciss
4000
3000
2000
1000
0
10
TJ = 25C
10000
Ciss
1000
Coss
100
Crss
Coss
Crss
VGS
4986
VGS = 0 V
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
12000
11000
10
5
10
15
20
25
10
100
1000
VDS
12
600
QT
10
1000
500
VGS
400
VDS
300
Q2
Q1
25
50
75
100
125
td(on)
100
100
Q3
0
tr
tf
200
TJ = 25C
ID = 25 A
td(off)
TJ = 25C
ID = 25 A
VDD = 250 V
VGS = 10 V
t, TIME (ns)
MTV25N50E
0
150
10
1
10
100


25
TJ = 25C
VGS = 0 V
20
15
10
5.0
0
0.54
0.62
0.78
0.70
0.86
0.94
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4987
MTV25N50E
SAFE OPERATING AREA
1000
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
100 s
1 ms
10 ms
dc
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1.0
100
10
800
700
600
500
400
300
200
100
0
25
1000

Safe Operating Area

1.0
ID = 25 A
900
50
75
100
125
150

D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P(pk)
0.01
SINGLE PULSE
t1
t2
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4988
MOTOROLA
Advance Information
MTV32N20E
TMOS E-FET.
TMOS POWER FET

32 AMPERES
200 VOLTS
RDS(on) = 0.075 OHM

speed switching applications in power supplies, converters, PWM
voltage transients.
Fast Recovery Diode
D
NChannel
G
CASE 43301, Style 2
D3PAK Surface Mount
S

Rating
Derate above 25C
Symbol
Value
Unit
VDSS
VDGR
200
Vdc
200
Vdc
VGS
ID
ID
IDM
20
Vdc
32
19
128
Adc
PD
180
1.44
2.0
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
Apk
C
mJ
810
RJC
RJA
RJA
0.7
62.5
35
C/W
TL
260
4989
MTV32N20E
Characteristic
Symbol
Min
Typ
Max
Unit
200
247
250
1000
100
nAdc
2.0
3.0
8.0
4.0
Vdc
mV/C
0.064
0.075
Ohm
2.1
3.0
2.7
gFS
12
20
mhos
Ciss
3600
5000
pF
Coss
130
250
Crss
690
1000
td(on)
25
50
tr
120
240
td(off)
75
150
tf
91
182
QT
85
120
Q1
12
Q2
40
Q3
30
1.1
0.9
2.0
trr
280
ta
195
tb
85
QRR
2.94
5.0
13
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 100 Vdc, ID = 32 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.2 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 160 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 32 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4990
MTV32N20E
50
VGS = 10 V
TJ = 25C
9V
VDS
100
80
8V
60
7V
40
6V
20
w 10 V
TJ = 55C
100C
25C
40
30
20
10
5V
1
TJ = 100C
0.12
0.10
0.08
25C
0.06
55C
0.04
0.02
0
8
16
40
24
32
48
56
64
2.5
10
0.10
TJ = 25C
0.09
0.08
VGS = 10 V
0.07
15 V
0.06
0.05

and Temperature
16
40
48
24
32
56
64

and Gate Voltage
10000
VGS = 0 V
VGS = 10 V
ID = 16 A
TJ = 125C
2.0
I DSS , LEAKAGE (mA)

(NORMALIZED)
VGS = 10 V
0.16
0.14
10
1000
1.5
1.0
100
100C
25C
0.5
50
25
0
25
50
75
100
125
150

Temperature
10
50
100
150
200

4991
MTV32N20E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
10000
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
8000
Crss
6000
4000
Ciss
2000
Coss
0
10
0
VGS
10
15
20
25
VDS
4992
200
16
TJ = 25C
ID = 32 A
VDS = 160 V
VDS
180
160
140
12
120
QT
100
VGS
80
Q2
Q1
60
40
Q3
0
0
10
20
30
40
50
60
70
80
90
20
0
100
1000
t, TIME (ns)
20
MTV32N20E
100
tr
td(on)
tf
10
1.0
1.0
10
100


TJ = 25C
VGS = 0 V
30
td(off)
TJ = 25C
ID = 32 A
VDD = 100 V
VGS = 10 V
20
10
0.2
0.6
0.4
0.8
1.0
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4993
MTV32N20E
SAFE OPERATING AREA
10 s

100
0.1 ms
1.0 ms
10
10 ms
VGS = 20 V
SINGLE PULSE
TC = 25C
1.0
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1.0
10
100
600
450
300
150
0
25
1000

50
75
100
125
150

Safe Operating Area
1.0
ID = 32 A
750

D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P(pk)
0.01
SINGLE PULSE
t1
t2
0.001
1.0E02
1.0E01
1.0E+00
1.0E+01
1.0E+02
RJC(t) = r(t) RJC

RJC = 0.7C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+03
1.0E+04
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
4994
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTV32N25E
TMOS POWER FET
32 AMPERES
250 VOLTS
RDS(on) = 0.08 OHM

source diode with a fast recovery time. Designed for low voltage,
D
NChannel
G
CASE 43301, Style 2
D3PAK Surface Mount

S
Fast Recovery Diode
Rating
DrainSource Voltage
Derate above 25C
Symbol
Value
Unit
VDSS
VDGR
250
Vdc
250
Vdc
VGS
ID
ID
IDM
20
Vdc
32
25
96
Adc
PD
250
2.0
3.57
Watts
W/C
Watts
TJ, Tstg
EAS
55 to 150
Apk
C
mJ
600
RJC
RJA
RJA
0.5
62.5
35
C/W
TL
260
4995
MTV32N25E
Characteristic
Symbol
Min
Typ
Max
Unit
250
380
Vdc
mV/C
10
100
100
nAdc
2.0
7.0
4.0
Vdc
mV/C
0.69
0.08
Ohm
2.25
2.6
2.5
gFS
11
20
mhos
Ciss
3800
5320
pF
Coss
750
1020
Crss
240
370
td(on)
31
60
tr
133
266
td(off)
93
186
tf
108
216
QT
97
136
Q1
22
Q2
43
Q3
41
1.0
0.92
1.5
trr
312
ta
220
tb
93
QRR
3.6
4.5
13
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 125 Vdc, ID = 32 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 200 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage

(IS = 32 Adc, VGS = 0 Vdc, TJ = 125C)

dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

4996
MTV32N25E
64
VGS = 10 V
TJ = 25C
VDS = 10 V
8V
56
9V
48
40
6V
32
24
16
5V
25C
100C
48
40
32
24
16
8
0.14
TJ = 100C
0.12
0.1
25C
0.08
0.06
55C
0.04
0.02
8
16
24
32
40
48
64
56
0.084
TJ = 25C
0.08
0.076
VGS = 10 V
0.072
15 V
0.068
0.064

and Temperature
16
40
48
24
32
56
64

and Gate Voltage
10000
VGS = 0 V
VGS = 10 V
ID = 16 A
TJ = 125C
1.6
1000

(NORMALIZED)
VGS = 10 V
1.2
0.8
0.4
50
0.16
10
TJ = 55C
56
7V
64
25
0
25
50
75
100
125
150

Temperature
100C
100
10
25C
50
100
150
200
250

4997
MTV32N25E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
8000
C, CAPACITANCE (pF)
7000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
6000
5000
Ciss
4000
3000
Crss
2000
Coss
1000
0
10
Crss
5
0
VGS
10
15
20
25
VDS
4998
12
300
QT
10
TJ = 25C
ID = 32 A
VDD = 125 V
VGS = 10 V
250
VGS
200
Q2
Q1
6
150
100
TJ = 25C
ID = 32 A
2
0
1000
Q3
0
10
50
VDS
30
20
40
50
60
70
80
90
0
100
t, TIME (ns)
MTV32N25E
10
1
10


100
32
TJ = 25C
VGS = 0 V
IS = 32 A
dlS/dt = 100 A/s
VDD = 25 V
TJ = 25C
3.4
td(off)
td(on)
2.8
2.2
1.6
tr
tf
100
12
16
20
24
28
32
24
16
0
0.5
0.55
0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95

SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
4999
MTV32N25E
SAFE OPERATING AREA
600
VGS = 20 V
SINGLE PULSE
TC = 25C

100
100 s
10
1 ms
10 ms
dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
10
1
100
0.1
ID = 32 A
500
400
300
200
100
0
25
1000

Safe Operating Area

50
75
100
125
150

D = 0.5
0.2
0.1
0.1
0.05
0.02
P(pk)
0.01
0.01
SINGLE PULSE
t1
t2
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41000
MOTOROLA
Data Sheet
TMOS E-FET.
TO-247 With Isolated Mounting Hole
Designer's
MTW6N100E
TMOS POWER FET

6.0 AMPERES
1000 VOLTS
RDS(on) = 1.5 OHM

Isolated Mounting Hole Reduces Mounting Hardware

TO247AE
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
1000
Vdc
VDGR
1000
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
6.0
4.2
18
Adc

Derate above 25C
PD
180
1.43
Watts
W/C
TJ, Tstg
55 to 150

EAS
720
mJ

RJC
RJA
0.70
40
C/W
TL
260
Apk
REV 2
41001
MTW6N100E
Characteristic
Symbol
Min
Typ
Max
Unit
1000
1,270
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
1.28
1.5
Ohm
8.0
14.4
12.6
gFS
4.0
7.2
mhos
Ciss
3000
4210
pF
Coss
219
440
Crss
43
90
td(on)
27
45
tr
29
65
td(off)
93
170
tf
43
95
QT
66
100
Q1
12.5
Q2
25.9
Q3
26
0.808
0.64
1.0
trr
735
ta
188
tb
547
QRR
4.7

LD
4.5
nH

LS
13
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 500 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 ))
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDS = 800 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)
ns
nC


(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125C)

(S Fi
(See
Figure 14)
((IS = 6.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/s)
VSD
Vdc
ns

41002
MTW6N100E
12
12
VGS = 10 V
VDS 10 V
6V
TJ = 25C
10
5V
8
6
4
100C
8
6
25C
4
2
2
0
10
TJ = 55C
4V
0
6
8
10
12
14
16
18
0
2.0
20
2.4
2.9
TJ = 100C
2.5
2.1
1.7
25C
1.3
0.9
55C
0.5
0
6
8
4
10
12
4.4
4.8
5.2
TJ = 25C
1.52
1.48
1.44
1.40
VGS = 10 V
1.36
15 V
1.32
1.28
1.24
0
7
8
9
4
5
6
10
11
12

and Gate Voltage
VGS = 0 V
VGS = 10 V
ID = 3 A
TJ = 125C
10000

(NORMALIZED)
4.0
100000
2.8
2.0
1.6
1.2
100C
1000
100
25C
10
0.8
0.4
50
3.6
1.56

and Temperature
2.4
3.2

VGS = 10 V
2.8
1
25
0
25
50
75
100
125

Temperature
150
100
200 300 400 500 600 700 800 900 1000


41003
MTW6N100E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
10000
C, CAPACITANCE (pF)
6000
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25C
VGS = 0 V
C, CAPACITANCE (pF)
7000
5000
4000
Crss
Ciss
3000
2000
1000
0
5
VGS
10
Coss
100
Crss
15
20
25
VDS
41004
TJ = 25C
1000
Coss
Crss
0
10
Ciss
10
10
100
1000

Variation
400
ID = 6 A
TJ = 25C
14
12
350
300
QT
10
250
200
VGS
Q1
Q2
150
100
4
2
0
10
50
VDS
Q3
20
30
40
50
60
70
1000
VDD = 480 V
ID = 6 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
16
MTW6N100E
100
td(off)
tf
td(on)
tr
10
1
10
100


6
VGS = 0 V
TJ = 25C
5
4
3
2
1
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78
0.82
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41005
MTW6N100E
SAFE OPERATING AREA
10
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10 s
100 s
1.0
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
700
500
400
300
200
100
0
25
1000
100
10
ID = 6 A
600
50
75
100
125
150

Safe Operating Area


1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E05
t1
t2
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41006
MOTOROLA
Data Sheet
TMOS E-FET.
TO-247 With Isolated Mounting Hole
Designer's
MTW7N80E
TMOS POWER FET

7.0 AMPERES
800 VOLTS
RDS(on) = 1.0 OHM


Rating

TO247AE
S
Symbol
Value
Unit
DrainSource Voltage
VDSS
800
Vdc
VDGR
800
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
7.0
5.1
21
Adc

Derate above 25C
PD
180
1.43
Watts
W/C
TJ, Tstg
55 to 150

(VDD =100 Vdc, VGS = 10 Vdc, IL = 21 Apk, L = 3.0 mH, RG = 25 )
EAS
661
mJ

RJC
RJA
0.70
62.5
C/W
TL
260
Apk
REV 2
41007
MTW7N80E
Characteristic
Symbol
Min
Typ
Max
Unit
800
1,030
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
0.87
1.0
Ohm
6.8
10
10.5
gFS
4.0
7.63
mhos
Ciss
3000
4160
pF
Coss
244
490
Crss
46
90
td(on)
20
40
tr
37
85
td(off)
84
165
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 7.0 Adc)
(ID = 3.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 400 Vdc, ID = 7.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 7.0 Adc,
VGS = 10 Vdc)
tf
49
105
QT
70
105
Q1
13
Q2
28
Q3
23
0.817
0.7
1.14
trr
651
ta
164
ns
nC


(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 7.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns
tb
487
QRR
4.78

LD
4.5
nH

LS
13
nH


41008
MTW7N80E
14
14
VGS = 10 V
12
VDS 10 V
12
7V
10
TJ = 25C
6V
8
6
4
2
0
8
12
16
6
10
14
10
8
6
25C
4
TJ = 55C
5V
0
100C
18
0
2.0
20
2.4
2.8
3.2
3.6
4.0
4.4
4.8
5.2
2.0
VGS = 10 V
1.8
TJ = 100C
1.6
1.4
1.2
1.0
25C
0.8
0.6
55C
0.4
0.2
6
8
10
12
14
1.08
TJ = 25C
1.04
1.00
0.96
VGS = 10 V
0.92
15 V
0.88
0.84
0.80
8
4
6
10
14
12
100000
2.4
VGS = 0 V
VGS = 10 V
ID = 3.5 A
10000
1.6
1.2
0.8
TJ = 125C
100C
1000
100
25C
10
0.4
0
50

and Gate Voltage

(NORMALIZED)

and Temperature
2.0
5.6
25
0
25
50
75
100
125

Temperature
150
100
200
300
500
700
400
600
800

41009
MTW7N80E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
7000
VDS = 0 V
Ciss
10000
VGS = 0 V
TJ = 25C
VGS = 0 V
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
6000
5000
4000
3000
Ciss
Crss
2000
Coss
100
Coss
Crss
0
5
VGS
10
15
20
VDS
41010
1000
Crss
1000
0
10
TJ = 25C
25
10
10
100
1000

Variation
600
QT
10
500
400
VGS
Q1
300
Q2
200
2
VDS
Q3
0
0
10
20
30
40
100
ID = 7 A
TJ = 25C
50
60
0
70
1000
VDD = 400 V
ID = 7 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTW7N80E
100
td(off)
tf
tr
td(on)
10
1
10


100
7
VGS = 0 V
TJ = 25C
6
5
4
3
2
1
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78
0.82
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41011
MTW7N80E
SAFE OPERATING AREA
700
100
VGS = 20 V
SINGLE PULSE
TC = 25C
10
10 s
100 s
1.0
1 ms
10 ms
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
100
ID = 7 A
600
500
400
300
200
100
0
1000
50
25
75
100
150
125

Safe Operating Area

1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
t1
t2
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41012
MOTOROLA
Data Sheet
TMOS E-FET.
TO-247 with Isolated Mounting Hole
Designer's
MTW8N60E
TMOS POWER FET

8.0 AMPERES
600 VOLTS
RDS(on) = 0.55 OHM

G
S
TO247AE

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
600
Vdc
VDGR
600
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
8.0
6.4
24
Adc

Derate above 25C
PD
180
1.43
Watts
W/C
TJ, Tstg
55 to 150

EAS
864
mJ

RJC
RJA
0.70
40
C/W
TL
260
Apk
REV 3
41013
MTW8N60E
Characteristic
Symbol
Min
Typ
Max
Unit
600
695
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
0.46
0.55
Ohm
3.2
4.8
4.6
gFS
4.0
8.5
mhos
Ciss
2480
3470
pF
Coss
247
346
Crss
56
120
td(on)
23.6
50
tr
37.6
70
td(off)
80
170
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 8.0 Adc)
(ID = 4.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 300 Vdc, ID = 8.0 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Figure 8)
(VDS = 300 Vdc, ID = 8.0 Adc,
VGS = 10 Vdc)
tf
48
95
QT
67
100
Q1
17
Q2
26
Q3
27
0.829
0.71
1.1
trr
381
ta
225
ns
nC


(IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
((IS = 8.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns
tb
156
QRR
4.61

LD
4.5
nH

LS
13
nH


41014
MTW8N60E
16
16
TJ = 25C
VGS = 10 V
12
10
8
5V
6
4
2
0
3
4
5
6
7
8
100C
12
10
8
6
25C
4
2
4V
0
VDS 10 V
14
6V
14
TJ = 55C
0
2.0
10
2.4
2.8
3.2
3.6 4.0
4.4 4.8
5.2
0.86
VGS = 10 V
0.76
TJ = 100C
0.66
0.56
25C
0.46
0.36
0.26
0.16
55C
2
6
10
8
12
14
16
0.46
TJ = 25C
0.45
0.44
0.43
VGS = 10 V
0.42
0.41
15 V
0.40
0.39
0.38
6 7 8 9 10 11 12 13 14 15 16

and Gate Voltage
2.8
10000
TJ = 125C
VGS = 10 V
ID = 4 A
1000

(NORMALIZED)

and Temperature
2.4
6.0

5.6
2.0
1.6
1.2
100C
100
10
25C
1.0
0.8
VGS = 0 V
0.4
50
25
0
25
50
75
100
125

Temperature
150
0.1
200
400
100
300
500
600

41015
MTW8N60E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
7000
10000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
6000
VGS = 0 V
5000
4000
3000
Ciss
Crss
2000
1000
0
10
0
VGS
1000
Coss
100
Crss
Coss
Crss
TJ = 25C
10
15
20
VDS
25
10
10
100
1000
41016

Variation
450
ID = 8 A
TJ = 25C
16
400
14
350
12
300
QT
10
250
VGS
8
Q2
Q1
200
150
100
2
0
10
50
VDS
Q3
20
30
40
50
60
0
70
1000
VDD = 300 V
ID = 8 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
18
MTW8N60E
100
td(off)
tf
tr
td(on)
10
1
10
100



8
VGS = 0 V
TJ = 25C
6
5
4
3
2
1
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78
0.82
0.86
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature
41017
MTW8N60E
SAFE OPERATING AREA
900
100
VGS = 20 V
SINGLE PULSE
TC = 25C
10
10 s
100 s
1.0
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
10
100
1.0
ID = 8 A
800
700
600
500
400
300
200
100
0
25
1000
50
75
100
125

Safe Operating Area
150

1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
t1
t2
0.001
0.01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
0.1
1.0
10
t, TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41018
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTW10N100E
TMOS POWER FET

10 AMPERES
1000 VOLTS
RDS(on) = 1.3 OHM

against unexpected voltage transient.

TO247AE
S

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
1000
Vdc
VDGR
1000
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
10
6.2
30
Adc

Derate above 25C
PD
250
2.0
Watts
W/C
TJ, Tstg
55 to 150

(VDD = 100 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 )
EAS
500
mJ

RJC
RJA
0.50
40
C/W
TL
260
Apk
REV 2
41019
MTW10N100E
Characteristic
Symbol
Min
Typ
Max
Unit
1000
1,254
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
1.10
1.3
Ohm
11
15
15.3
gFS
8.0
10
mhos
Ciss
3500
5600
pF
Coss
264
530
Crss
52
90
td(on)
29
60
tr
57
120
td(off)
118
240
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 10 Adc)
(ID = 5.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 500 Vdc, ID = 10 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 10 Adc,
VGS = 10 Vdc)
tf
70
140
QT
100
120
Q1
18.4
Q2
33
Q3
36.7
0.885
0.8
1.1
trr
885
ta
220
ns
nC


(IS = 10 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns
tb
667
QRR
8.0

LD
4.5
nH

LS
13
nH


41020
MTW10N100E
20
20
TJ = 25C
6V
16
14
12
10
5V
8
6
4
2
0
16
14
12
10
25C
8
6
100C
0
2.0
8 10 12 14 16 18 20 22 24 26 28 30
6
2.4
2.4
TJ = 100C
2.0
1.6
25C
1.2
0.8
55C
0.4
0
12
8
6
10
14
16
18
20
6.0
18
20
TJ = 25C
1.48
1.40
1.32
1.24
VGS = 10 V
1.16
15 V
1.08
1.00
0
6
8
10
12
14
16

and Gate Voltage
2.8
100000
VGS = 0 V
VGS = 10 V
ID = 5 A
TJ = 125C
10000
2.0

(NORMALIZED)
5.6
1.56

and Temperature
2.4
2.8 3.2 3.6

4.0
4.4 4.8
5.2

VGS = 10 V
TJ = 55C
4V
0
VDS 10 V
18
18
VGS = 10 V
1.6
1.2
0.8
100C
1000
100
25C
10
0.4
0
50
1
25
0
25
50
75
100
125

Temperature
150
100
200 300 400 500 600 700 800 900 1000


41021
MTW10N100E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
8000
10000
VGS = 0 V
VDS = 0 V
Ciss
TJ = 25C
VGS = 0 V
Ciss
6000
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
7000
5000
4000
Crss
Ciss
3000
2000
TJ = 25C
1000
Coss
100
Crss
1000
0
10
Crss
Crss
10
0
5
VGS
10
15
20
VDS
41022
25
10
100
1000

Variation
560
QT
12
480
10
400
VGS
8
Q1
320
Q2
240
160
ID = 10 A
TJ = 25C
80
Q3
VDS
0
0
10
20
30
40
50
60
70
80
90
0
100
1000
VDD = 500 V
ID = 10 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
14
MTW10N100E
100
td(off)
tf
tr
td(on)
10
1
10


100

10
9
8
VGS = 0 V
TJ = 25C
7
6
5
4
3
2
1
0
0.50 0.54 0.58
0.62 0.66
0.70 0.74
0.78 0.82 0.86
0.90
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41023
MTW10N100E
SAFE OPERATING AREA
500
100
VGS = 20 V
SINGLE PULSE
TC = 25C
10
10 s
100 s
1.0
1 ms
10 ms
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
ID = 10 A
400
300
200
100
0.01
0.1
100
1.0
10
1000
50
75
100
125
25

Safe Operating Area
150

1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
t1
t2
1.0E03
1.0E02
t, TIME (s)
1.0E01
1.0E+100
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41024
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTW14N50E
TMOS POWER FET

14 AMPERES
500 VOLTS
RDS(on) = 0.40 OHM

voltage transients.
Designed to Replace External Zener Transient Suppressor

Absorbs High Energy in the Avalanche Mode

TO247AE
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc
VGS
20
Vdc

ID
ID
IDM
14
9.0
60
Adc

Derate above 25C
PD
180
1.44
Watts
W/C
TJ, Tstg
55 to 150

EAS
860
mJ

RJC
RJA
0.7
40
C/W
TL
260
Rating
Apk
REV 3
41025
MTW14N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
520
Vdc
mV/C
250
1000
100
nAdc
2.0
3.2
7.0
4.0
Vdc
mV/C
0.32
0.40
Ohm
6.7
5.6
gFS
5.0
mhos
Ciss
2510
3510
pF
Coss
280
392
Crss
67
94
td(on)
28
60
tr
80
160
td(off)
80
160
tf
60
120
QT
65
85
Q1
17
Q2
47
Q3
34
VSD
1.0
0.9
1.6
Vdc
trr
390
ns
ta
245
tb
145
QRR
5.35

LD
5.0
nH

LS
13
nH
OFF CHARACTERISTICS
(VGS = 0 V, ID = 250 Adc)
V(BR)DSS

(VDS = 500 Vdc, VGS = 0)
(VDS = 500 Vdc, VGS = 0, TJ = 125C)
IDSS
IGSS
Adc
ON CHARACTERISTICS*
VGS(th)
RDS(on)

(ID = 14 Adc)
(ID = 7.0 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0,
0
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 Vdc, ID = 14 Adc,

VGS = 10 Vdc
Vdc,
RG = 4.7 )
Fall Time
Gate Charge
((VDS = 400 Vdc, ID = 14 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage
((IS = 14 Adc, VGS = 0))

(IS = 14 Adc, VGS = 0, TJ = 125C)

((IS = 14 Adc, VGS = 0,
dIS/dt = 100 A/s, VGS = 0)
*Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

41026
MTW14N50E
20
TJ = 25C
14
12
10
8
VGS = 5 V
6
4
2
0
TJ = 100C
25C
6
4
10
VGS = 10V
0.6
TJ = 100C
0.4
TJ = 25C
0.2
TJ = 55C
8
12
16
20
28
24
10
0.36
TJ = 25C
0.34
0.32
0.30
0.28
VGS = 10 V
0.26
VGS = 15 V
0.24
0.22
0.20
8
12
16
20
24
28
Figure 4.OnResistance versus Drain Current
100000
I DSS , DRAIN-TO-SOURCE LEAKAGE (nA)

(NORMALIZED)
2.5
0.38
Figure 3.OnResistance versus Drain Current
2.0
1.5
1.0
VGS = 10 V
ID = 7 A
0.5
0
50
55C
0.8
10
1.0
0.0
12
2
3
4
5
6
7
8
14
16
4V
VDS 10 V
18
6V
16
18
20
7V
10 V
50
100
150
200
Figure 5.OnResistance Variation

With Temperature
VGS = 0 V
20000
10000
TJ = 125C
2000
1000
TJ = 100C
200
100
TJ = 25C
20
10
100
200
300
400
500
Figure 6.DrainToSource Leakage

41027
MTW14N50E

The resistive switching time variation versus gate resistance (Figure 10) shows how typical switching performance
is affected by the parasitic circuit elements. If the parasitics
switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
8000
7000
10000
TJ = 25C
VDS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
2000
6000
5000
4000
Ciss
3000
2000
0
10
1000
200
Coss
100
Crss
Coss
1000
20
Crss
5
0
VGS
VGS = 0 V
Ciss
VGS = 0 V
10
15
20
25
VDS
10
20
10
100 200
1000
Figure 7a. Low Voltage Capacitance Variation
41028
500
TJ = 25C
ID = 14 A
VDS = 400 V
VDS
12
QT
400
300
9
Q1
6
200
Q2
VGS
10
Q3
20
30
40
50
60
70
100
80
90
0
100
10000
15
MTW14N50E
td(off)
TJ = 25C
ID = 14 A
VDD = 250 V
VGS = 10 V
2000
1000
td(on)
200
100
tr
20
tf
10
10
20
100
200


1000
14
TJ = 25C
VGS = 0 V
dIS/dt = 100 A/s
12
10
8
6
4
2
0
0.2
0.4
0.6
0.8
SAFE OPERATING AREA

biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak repetitive
pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in
AN569, Transient Thermal ResistanceGeneral Data and Its
Use.
(tr,tf) do not exceed 10s. In addition the total power averaged
over a complete switching cycle must not exceed (TJ(MAX)
TC)/(RJC).
operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than
41029
100
VGS = 20 V
SINGLE PULSE
TC = 25C
20
10 s
100 s
10
1 ms
2
10 ms
1
THERMAL LIMIT
PACKAGE LIMIT
RDS(on) LIMIT
0.2
0.1
dc
20
10
100 200
1000

MTW14N50E
900
800
600
500
400
300
200
100
0

50
75
100
125
25
150


Safe Operating Area
PEAK ID = 14 A
VDD = 50 V
700
D = 0.5
= 0.2
0.2
0.1
= 0.1
= 0.05
= 0.02
= 0.01
0.02
0.01
RJC(t) = r(t) RJC

RJC = 0.7C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
SINGLE PULSE
0.002

P(pk)
t1
t2
0.001
0.01
0.02
0.1
0.2
2
t, TIME (ms)
10
20
100
200
1000
41030
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTW16N40E
TMOS POWER FET

16 AMPERES
400 VOLTS
RDS(on) = 0.24 OHM

G
S
TO247AE

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
400
Vdc
VDGR
400
Vdc

VGS
VGSM
20
40
Vdc
Vpk

Continuous @ 100C
ID
ID
IDM
16
9.0
56
Adc

Derate above 25C
PD
180
1.4
Watts
W/C
TJ, Tstg
55 to 150

EAS
870
mJ
Thermal Resistance
RJC
RJA
0.70
40
C/W
TL
260
Junction to Case
Junction to Ambient
Apk
REV 2
41031
MTW16N40E
Characteristic
Symbol
Min
Typ
Max
Unit
400
420
Vdc
mV/C
0.25
1.0
100
2.0
3.0
7.0
4.0
mV/C
0.225
0.24
Ohm
4.8
4.3
gFS
8.0
10
mhos
Ciss
2570
3600
pF
Coss
330
460
Crss
82
164
td(on)
29
50
tr
62
70
td(off)
76
170
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
mAdc
nAdc
VGS(th)
RDS(on)

(ID = 16 Adc)
(ID = 8.0 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 200 Vdc, ID = 16 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Figure 8)
(VDS = 320 Vdc, ID = 16 Adc,
VGS = 10 Vdc)
tf
57
95
QT
66
93
Q1
17
Q2
31
Q3
30
1.0
0.9
1.6
trr
340
ta
228
ns
nC


(IS = 16 Adc, VGS = 0 Vdc, TJ = 125C)

(See Fig
Figure
re 9)
dIS/dt = 100 A/s)
VSD
Vdc
ns
tb
112
QRR
4.3

LD
5.0
nH

LS
13
nH


41032
MTW16N40E
40
TJ = 25C VGS = 10 V
8V
VDS = 50 V
35
7V
25
20
30
6.5 V
15
6V
10
5
0
4.5 V
30
25
20
15
100C
10
5
4
8
12
6
10
14 16
18
20
2
4
6
0.75
VGS = 10 V
0.6
TJ = 100C
0.45
25C
0.3
0.15
55C
10
20
15
30
25
0.32
TJ = 25C
0.30
0.28
0.26
VGS = 10 V
0.24
15 V
0.22
0.20
12
16
20
24
28
32

and Gate Voltage
3.0
1000
VGS = 0 V
VGS = 10 V
ID = 8 A
TJ = 125C

(NORMALIZED)

and Temperature
2.5

TJ = 55C
25C
2.0
1.5
1.0
100
100C
10
0.5
0
50
25
0
25
50
75
100
125

Temperature
150
1.0
50
100
200
300
350
150
250
400

41033
MTW16N40E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
10000
5000
4500
Ciss
TJ = 25C
VGS = 0 V
TJ = 25C
VGS = 0 V
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
4000
3500
3000
2500
Ciss
Crss
2000
1500
Ciss
Coss
1000
Crss
1000
500 VDS = 0 V
Crss
0
5
5
10
0
VGS
VDS
Coss
10
15
20
25
100
50
100
150
200
41034

Variation
350
ID = 16 A
TJ = 25C
12
280
QT
VGS
210
Q2
Q1
140
70
Q3
VDS
0
10
15
20
25
30
35
40
45
50
55
60 65
10000
VDD = 200 V
ID = 16 A
VGS = 10 V
TJ = 25C
1000
t, TIME (ns)
15
MTW16N40E
td(off)
100
tr
tf
td(on)
10
1
10
1000
100



8
VGS = 0 V
TJ = 25C
6
5
4
3
2
1
0
0.50
0.54
0.58
0.62
0.66
0.70
0.74
0.78
0.82
0.86
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature
41035
MTW16N40E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
20
10 s
100 s
10
1 ms
2
10 ms
1
THERMAL LIMIT
PACKAGE LIMIT
RDS(on) LIMIT
0.2
0.1
dc
10
100 200
20

900
100
ID = 16 A
800
700
600
500
400
300
200
100
0
1000
50
75
100
125
25

Safe Operating Area
150

1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
t1
t2
0.001
0.01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
0.1
1.0
10
t, TIME (ms)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41036
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTW20N50E
TMOS POWER FET

20 AMPERES
500 VOLTS
RDS(on) = 0.24 OHM


TO247AE
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
20
14.1
60
Adc

Derate above 25C
PD
250
2.0
Watts
W/C
Rating
Apk
TJ, Tstg
55 to 150

EAS
2000
mJ

RJC
RJA
0.50
40
C/W
TL
260
REV 3
41037
MTW20N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
583
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
0.20
0.24
Ohm
5.75
6.0
6.0
gFS
11
16.2
mhos
Ciss
3880
6950
pF
Coss
452
920
Crss
96
140
td(on)
29
55
tr
90
165
td(off)
97
190
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 20 Adc)
(ID = 10 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 Vdc, ID = 20 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
tf
84
170
QT
100
132
Q1
20
Q2
44
Q3
36
0.916
0.81
1.1
trr
431
ta
272
ns
nC


(IS = 20 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns
tb
159
QRR
6.67

LD
5.0
nH

LS
13
nH


41038
MTW20N50E
40
VDS 10 V
8V
32
24
40
9V
VGS = 10 V
TJ = 25C
7V
16
6V
8
32
24
16
100C
25C
TJ = 55C
5V
0
6
10
14
18
4
8
12
16
0
2.0 2.4
20
0.6
VGS = 10 V
0.5
TJ = 100C
0.4
25C
0.3
0.2
55C
0.1
0
0
16
24
12
20
28
32
40
36
TJ = 25C
0.32
0.30
VGS = 10 V
0.28
15 V
0.26
0.24
0
2.4
16
24
12
20
28
32
36
40

and Gate Voltage
10000
VGS = 10 V
ID = 10 A
VGS = 0 V
TJ = 125C

(NORMALIZED)
6.8
0.34

and Temperature
2.0
6.4

2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0

1.6
1.2
0.8
1000
100C
100
10
25C
0.4
0
50
1
25
0
25
50
75
100
125
150

Temperature
50
100 150 200 250 300 350 400 450

500

41039
MTW20N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
9000
10000
8000
VGS = 0 V
TJ = 25C
Ciss
Ciss
C, CAPACITANCE (pF)
7000
C, CAPACITANCE (pF)
TJ = 25C
VGS = 0 V
VDS = 0 V
6000
5000
Ciss
Crss
4000
3000
1000
Coss
100
2000
Crss
1000
0
Crss
10
Coss
5
0
VGS
10
15
20
25
VDS
10
10
100
1000
41040

Variation
QT
8
400
VGS
Q1
Q2
300
200
ID = 20 A
TJ = 25C
10
20
100
VDS
Q3
0
1000
500
30
40
50
60
70
80
90
0
100
td(off)
VDD = 250 V
ID = 20 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
10
MTW20N50E
tr
tf
100
td(on)
10
1

10
100

20
16
VGS = 0 V
TJ = 25C
12
0
0.50 0.54 0.58 0.62 0.66 0.70 0.74 0.78 0.82 0.86 0.90 0.94
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41041
MTW20N50E
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
10 s
100 s
1 ms
1.0
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
2000
1800
1400
1200
1000
800
600
400
200
0.01
0.1
1.0
100
10
ID = 20 A
1600
1000
25

Safe Operating Area
150
50
75
100
125

1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
0.01
t1
SINGLE PULSE
0.001
1.0E05
t2
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41042
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTW24N40E
TMOS POWER FET

24 AMPERES
400 VOLTS
RDS(on) = 0.16 OHM


Rating

TO247AE
S
Symbol
Value
Unit
DrainSource Voltage
VDSS
400
Vdc
VDGR
400
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
24
17.7
72
Adc

Derate above 25C
PD
250
2.0
Watts
W/C
TJ, Tstg
55 to 150

EAS
600
mJ

RJC
RJA
0.50
40
C/W
TL
260
Apk
REV 3
41043
MTW24N40E
Characteristic
Symbol
Min
Typ
Max
Unit
400
360
Vdc
mV/C
10
100
100
nAdc
2.0
7.0
4.0
Vdc
mV/C
0.13
0.16
Ohm
4.5
4.3
gFS
11
17
mhos
Ciss
4000
5600
pF
Coss
530
740
Crss
112
220
td(on)
32
60
tr
96
204
td(off)
99
194
tf
92
186
QT
98
160
Q1
24
Q2
38
Q3
40
0.94
0.9
1.5
trr
372
ta
244
tb
128
QRR
5.3

LD
4.5
nH

LS
13
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 24 Adc)
(ID = 12 Adc, TJ =125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD 200= Vdc, ID = 24 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Figure 8)
(VDS = 320 Vdc, ID = 24 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 24 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

41044
MTW24N40E
50
50
VDS 10 V
VGS = 10 V
TJ = 25C
40
9V
8V
7V
30
6V
20
5V
10
40
30
20
25C
10
100C
4V
0
0
2.0
4.0
6.0
8.0
0
2.0
10
0.4
VGS = 10 V
0.35
0.3
TJ = 100C
0.25
0.2
25C
0.15
0.1
55C
0.05
0
0
10
20
30
7.0
40
50
TJ = 25C
0.18
0.17
0.16
VGS = 10 V
0.15
15 V
0.14
0.13
0.12
0
3.0
10
20
30
40
50

and Gate Voltage
10000
VGS = 0 V
VGS = 10 V
ID = 12 A
TJ = 125C
1000

(NORMALIZED)
6.5
0.19

and Temperature
2.5
3.0 3.5 4.0 4.5 5.0 5.5 6.0


TJ = 55C
2.5
2.0
1.5
1.0
100C
100
10
25C
0.5
0
50
25
0
25
50
75
100
125
150

Temperature
100
200
300
400

41045
MTW24N40E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
9000
10000
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
7000
6000
5000
VGS = 0 V
TJ = 25C
TJ = 25C
VDS = 0 V
VGS = 0 V
8000
Ciss
Crss
4000
3000
Ciss
1000
Coss
100
Crss
2000
1000
0
10
Coss
Crss
0
5
VGS
10
5
10
15
20
25
VDS
41046
10
100
1000

Variation
12
10
VDD = 200 V
ID = 24 A
VGS = 10 V
TJ = 25C
VGS
Q1
400
Q2
ID = 24 A
TJ = 25C
300
t, TIME (ns)
500
tr
tf
100
td(off)
200
4
2
0
1000
600
QT
MTW24N40E
td(on)
100
Q3
20
VDS
40
60
0
100
80
10
10


100

24
VGS = 0 V
TJ = 25C
20
16
12
8
4
0
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41047
MTW24N40E
SAFE OPERATING AREA
700
VGS = 20 V
SINGLE PULSE
TC = 25C

100
100 s
10
1 ms
10 ms
DC
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1.0
10
100
500
400
300
200
100
0
25
1000

Safe Operating Area

1.0
ID = 24 A
600
150
50
75
100
125

D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P(pk)
0.01
SINGLE PULSE
t1
t2
0.001
1.0E05
1.0E04
1.0E02
t, TIME (s)
1.0E03
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41048
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTW32N20E
TMOS POWER FET

32 AMPERES
200 VOLTS
RDS(on) = 0.075 OHM

voltage transients.


TO247AE
S
Symbol
Value
Unit
DrainSource Voltage
VDSS
200
Vdc
VDGR
200
Vdc
VGS
20
Vdc

ID
ID
IDM
32
19
128
Adc

Derate above 25C
PD
180
1.44
Watts
W/C
TJ, Tstg
55 to 150

EAS
810
mJ

RJC
RJA
0.7
40
C/W
TL
260
Rating
Apk
REV 1
41049
MTW32N20E
Characteristic
Symbol
Min
Typ
Max
Unit
200
247
Vdc
mV/C
250
1000
100
nAdc
2.0
8.0
4.0
Vdc
mV/C
0.064
0.075
Ohm
3.0
2.7
gFS
12
mhos
Ciss
3600
5000
pF
Coss
130
250
Crss
690
1000
td(on)
25
50
tr
120
240
td(off)
75
150
tf
91
182
QT
85
120
Q1
12
Q2
40
Q3
30
1.1
0.9
2.0
trr
280
ta
195
tb
85
QRR
2.94

LD
5.0
nH

LS
13
nH
OFF CHARACTERISTICS
(VGS = 0 V, ID = 250 Adc)
V(BR)DSS

(VDS = 200 Vdc, VGS = 0)
(VDS = 200 Vdc, VGS = 0, TJ = 125C)
IDSS
IGSS
Adc
ON CHARACTERISTICS*
VGS(th)
RDS(on)

(ID = 32 Adc)
(ID = 16 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0,
0
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 100 Vdc, ID = 32 Adc,

VGS = 10 Vdc
Vdc,
RG = 6.2 )
Fall Time
Gate Charge
((VDS = 160 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
ns
nC

Forward OnVoltage
(IS = 32 Adc, VGS = 0)

(IS = 16 Adc, VGS = 0, TJ = 125C)

((IS = 32 Adc, VGS = 0,
dIS/dt = 100 A/s)
VSD
Vdc
ns

41050
MTW32N20E
YPICAL ELECTRICAL CHARACTERISTICS
100
TJ = 55C
9V
50
VGS = 10 V
TJ = 25C
80
8V
60
7V
40
6V
20
100C
VDS 10 V
40
25C
30
20
10
5V
2
0.14
TJ = 100C
0.12
0.1
0.08
25C
0.06
55C
0.04
0.02
8
24
16
32
40
48
56
64
VGS = 10 V
0.16
10
10
0.1
TJ = 25C
0.09
0.08
VGS = 10 V
0.07
15 V
0.06
0.05
16
24
32
40
48
56
64

and Temperature

and Gate Voltage
2.5
10000
VGS = 0 V
VGS = 10 V
ID = 16 A
2
I DSS, LEAKAGE (mA)

(NORMALIZED)
1.5
2000
TJ = 125C
1000
200
100
100C
20
0.5
50
25
25
50
75
100
125
150
10
25C
0
50
100
150
200

Temperature

41051
MTW32N20E

voltage corresponding to the offstate condition when calculating td(on) and is read at a voltage corresponding to the on
state when calculating td(off).
The published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used.
In most cases, a satisfactory estimate of average input current
circuit so that
The voltage is determined by L di/dt, but since di/dt is a function of drain current, the mathematical solution is complex.
switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
from the capacitance curves in a standard equation for voltage
change in an RC network. The equations are:
10000
VDS = 0
VGS = 0
TJ = 25C
C, CAPACITANCE (pF)
8000
Crss
6000
4000
Ciss
2000
Coss
0
10
0
VGS
10
15
20
25
VDS
41052
200
16
TJ = 25C
ID = 32 A
VDS = 160 V
VDS
180
160
140
12
120
QT
100
80
Q2
Q1
VGS
60
40
20
Q3
0
10
20
30
40
50
60
70
80
90
0
100
1000
td(off)
TJ = 25C
ID = 32 A
VDD = 100 V
VGS = 10 V
200
t, TIME (ns)
20
MTW32N20E
100
tr
tf
td(on)
20
10
2
1

10
20
100

TJ = 25C
VGS = 0 V
30
20
10
0.2
0.4
0.6
0.8
1
SAFE OPERATING AREA

biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak repetitive
pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in
AN569, Transient Thermal ResistanceGeneral Data and Its
Use.
(tr,tf) do not exceed 10s. In addition the total power averaged
over a complete switching cycle must not exceed (TJ(MAX)
TC)/(RJC).
operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than
temperature.
41053
MTW32N20E
VGS = 20 V
SINGLE PULSE
TC = 25C
200
100

1000
10 s
.1
20
10
1
10
2
1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.2
0.1
10
100 200
20
1000
750
600
450
300
150
0
25

Safe Operating Area
(NORMALIZED)
0.2
0.1
0.01
0.002
0.001
0.01
50
75
100
125
150

D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.02
ID = 32 A
0.01
SINGLE PULSE
t1
t2
0.02
0.1
0.2
2
t, TIME (ms)
10
20
RJC(t) = r(t) RJC

RJC = 0.7C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
100
200
1000
41054
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's

voltage transients.
MTW32N25E
TMOS POWER FET

32 AMPERES
250 VOLTS
RDS(on) = 0.08 OHM


TO247AE
S
Symbol
Value
Unit
DrainSource Voltage
VDSS
250
Vdc
VDGR
250
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
32
25
96
Adc

Derate above 25C
PD
250
2.0
Watts
W/C
TJ, Tstg
55 to 150
Rating
Apk

EAS

RJC
RJA
0.50
40
C/W
TL
260
mJ
600
REV 1
41055
MTW32N25E
Characteristic
Symbol
Min
Typ
Max
Unit
250
300
380
Vdc
mV/C
10
100
100
2.0
7.0
4.0
mV/C
0.07
0.08
Ohm
2.2
2.6
2.5
gFS
11
20
mhos
Ciss
3800
5350
pF
Coss
726
1020
Crss
183
370
td(on)
31
60
tr
133
266
td(off)
93
186
tf
108
216
QT
97
136
Q1
22
Q2
43
Q3
41
1.0
0.92
1.5
trr
312
ta
220
tb
93
QRR
3.6

LD
4.5
nH

LS
13
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
nAdc
VGS(th)
RDS(on)

(ID = 32 Adc)
(ID = 16 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 200 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 32 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

41056
MTW32N25E
64
8V
48
40
6V
32
24
16
5V
25C
48
100C
40
32
24
16
3
5
7
4
6
8
10
7
3
4
5
6
0.16
VGS = 10 V
0.14
TJ = 100C
0.12
0.1
0.08
25C
0.06
55C
0.04
16
32
48
24
40
56
64
0.084
TJ = 25C
0.08
0.076
VGS = 10 V
0.072
15 V
0.068
0.064
2.0
16
24
40
32
48
56
64

and Gate Voltage
10000
VGS = 10 V
ID = 2.0 A
VGS = 0 V
TJ = 125C
1000
1.6

(NORMALIZED)

and Temperature
1.2
0.8
0.4
50

0.02
TJ = 55C
8
0
VDS 10 V
56
9V
56
64
7V
VGS = 10 V
TJ = 25C
25
0
25
50
75
100
125
150

Temperature
100C
100
10
25C
50
150
100
200
250

41057
MTW32N25E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
C, CAPACITANCE (pF)

8000
VDS = 0 V
7000
Ciss
VGS = 0 V
TJ = 25C
6000
5000
4000
Ciss
Crss
3000
2000
0
10
Coss
Crss
1000
5
0
VGS
10
15
20
25
VDS
41058
300
QT
10
250
VGS
200
Q1
Q2
150
100
ID = 32 A
TJ = 25C
2
Q3
0
10
20
VDS
30
40
60
50
70
80
90
50
0
100
1000
VDD = 125 V
ID = 32 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTW32N25E
tr
tf
td(off)
100
td(on)
10
10


100

32
VGS = 0 V
TJ = 25C
24
16
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
1.0
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41059
MTW32N25E
SAFE OPERATING AREA
600
VGS = 20 V
SINGLE PULSE
TC = 25C

100
100 s
10
1 ms
10 ms
dc
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
ID = 32 A
500
400
300
200
100
0.1
0.1
1.0
1000
100
25
50
75
100
125
150

Safe Operating Area

1.0
10
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P(pk)
0.01
SINGLE PULSE
t1
t2
0.001
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41060
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's

voltage transients.
MTW35N15E
TMOS POWER FET

35 AMPERES
150 VOLTS
RDS(on) = 0.05 OHM


TO247AE
S
Symbol
Value
Unit
DrainSource Voltage
VDSS
150
Vdc
VDGR
150
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
35
26.9
105
Adc

Derate above 25C
PD
180
1.45
Watts
W/C
TJ, Tstg
55 to 150

EAS
600
mJ

RJC
RJA
0.70
62.5
C/W
TL
260
Rating
Apk
REV 2
41061
MTW35N15E
Characteristic
Symbol
Min
Typ
Max
Unit
150
210
Vdc
mV/C
10
100
100
nAdc
2.0
7.0
4.0
Vdc
mV/C
0.05
Ohm
1.45
1.8
1.7
gFS
11
18
mhos
Ciss
3600
5040
pF
Coss
855
1170
Crss
165
330
td(on)
28
56
tr
170
346
td(off)
90
180
tf
103
210
QT
98
137
Q1
19
Q2
49
Q3
40
0.95
0.9
1.5
trr
200
ta
167
tb
32
QRR
1.63

LD
4.5
nH

LS
13
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 35 Adc)
(ID = 17.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 120 Vdc, ID = 35 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 35 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

41062
MTW35N15E
60
70
VGS = 10 V
9.0 V
TJ = 25C
8.0 V
7.0 V
50
40
30
6.0 V
20
5.0 V
10
0
1.0
0.5
1.5
2.0
2.5
3.0
40
30
20
100C
4.0
6.0
5.0
TJ = 100C
0.05
25C
0.04
0.03
55C
0.02
0.01
10
50
20
30
40
70
60
0.047
TJ = 25C
0.045
0.043
VGS = 10 V
0.041
0.039
15 V
0.037
0.035

and Temperature
2.5
10
1000
VGS = 0 V
2.0
100
1.0
50
20
30
40
70
60

and Gate Voltage
VGS = 10 V
ID = 17.5 A
1.5
8.0
7.0
0.06
RDS(on), DRAIN-TO-SOURCE RESISTANCE

(NORMALIZED)
TJ = 55C
3.0
0.07
TJ = 125C
100C
10
1.0
0.5
0
50
25C
VGS = 10 V
50
0
2.0
4.0
3.5
0.09
0.08
VDS 10 V
60
10
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
70
25C
25
0
25
50
75
100
125
150

Temperature
0.1
100
50
150

41063
MTW35N15E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
space
10000
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
8000
6000
Crss
Ciss
4000
2000
Coss
Crss
0
10
0
VGS
10
15
20
25
VDS
41064
120
QT
10
100
VGS
Q2
Q1
8.0
80
60
6.0
4.0
40
TJ = 25C
ID = 35 A
20
2.0
VDS
Q3
0
20
60
40
80
0
100
1000
VDD = 75 V
ID = 35 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTW35N15E
tr
100
tf
td(off)
td(on)
10
10


100
35
VGS = 0 V
TJ = 25C
30
25
20
15
10
5
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41065
MTW35N15E
SAFE OPERATING AREA
600
VGS = 20 V
SINGLE PULSE
TC = 25C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

1000
100
10 s
10
100 s
1.0
10 ms
DC
1 ms
0.1
1.0
10
100
ID = 35 A
500
400
300
200
100
0
1000
25
50
75
100
125
150

Safe Operating Area


1.0
D = 0.05
0.2
0.1
0.1 0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
0.01
1.0E05
1.0E04
t2
1.0E03
1.0E02
t, TIME (s)
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E01
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41066
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's

voltage transients.
MTW45N10E
TMOS POWER FET

45 AMPERES
100 VOLTS
RDS(on) = 0.035 OHM


Rating

TO247AE
S
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
VDGR
100
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
45
34.6
135
Adc

Derate above 25C
PD
180
1.44
Watts
W/C
TJ, Tstg
55 to 150

EAS
810
mJ

RJC
RJA
0.70
62.5
C/W
TL
260
Apk
REV 1
41067
MTW45N10E
Characteristic
Symbol
Min
Typ
Max
Unit
100
116
Vdc
mV/C
10
100
100
2.0
7.0
4.0
mV/C
0.027
0.035
Ohm
1.13
2.16
1.53
gFS
12
mhos
Ciss
3480
5000
pF
Coss
1240
2000
Crss
315
650
td(on)
25
50
tr
234
470
td(off)
83
170
tf
116
240
QT
106
220
Q1
26
Q2
54
Q3
44
1.09
1.04
1.635
trr
166
ta
118
tb
48
QRR
1.1

LD
4.5
nH

LS
7.5
nH
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
nAdc
VGS(th)
RDS(on)

(ID = 45 Adc)
(ID = 22.5 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Fig
Figure
re 8)
((VDS = 80 Vdc, ID = 45 Adc,
VGS = 10 Vdc)
ns
nC


(IS = 45 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

41068
MTW45N10E
TJ = 25C
80
70
90
VGS = 10 V
8V
7V
9V
60
6V
50
40
30
5V
20
4V
10
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VDS 10 V
80
90
TJ = 55C
70
25C
60
50
100C
40
30
20
10
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
5.0
0.05
VGS = 10 V
TJ = 100C
0.04
25C
0.03
55C
0.02
0.01
10
20
40
60
30
50
70
80
90
0.032
TJ = 25C
0.030
VGS = 10 V
0.028
0.026
15 V
0.024
0.022
2.0
20
40
60
30
50
70
80
90

and Gate Voltage
10000
VGS = 0 V
VGS = 10 V
ID = 22.5 A
1000
1.6

(NORMALIZED)

and Temperature
10
1.2
0.8
TJ = 125C
100
100C
10
25C
0.4
50
25
0
25
50
75
100
125
150

Temperature
1.0
20
40
60
80
100

41069
MTW45N10E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
10000
C, CAPACITANCE (pF)
8000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
6000
4000
Crss
Ciss
Coss
2000
Crss
0
10
0
VGS
10
15
20
25
VDS
41070
120
QT
10
100
VGS
Q2
80
Q1
6
60
40
2
0
10
20
ID = 45 A
TJ = 25C
VDS
Q3
30
40
50
60
80
70
90
100
20
0
110
1000
VDD = 50 V
ID = 45 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTW45N10E
tr
100
tf
td(off)
td(on)
10
10


100
45
VGS = 0 V
40 T = 25C
J
35
30
25
20
15
10
5
0
0.5
0.56 0.62 0.68 0.74 0.80 0.86 0.92 0.98 1.04
1.1
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41071
MTW45N10E
SAFE OPERATING AREA
1000
VGS = 20 V
SINGLE PULSE
TC = 25C

1000
10 s
100
100 s
10
1 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
1.0
0.1
10 ms
DC
ID = 45 A
800
600
400
200
0
100
10
25
50
75
100
150
125

Safe Operating Area


1.0
D = 0.5
0.2
0.1
P(pk)
0.1 0.05
0.02
0.01
t1
SINGLE PULSE
t2
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41072
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTY14N100E
TMOS POWER FET

14 AMPERES
1000 VOLTS
RDS(on) = 0.80 OHM

efficient design also offers a draintosource diode with fast
applications in power supplies, converters, PWM motor controls, and
other inductive loads. The avalanche energy capability is specified to
voltage transients.

G
S
CASE 340G02, STYLE 1
TO264

Rating
Symbol
Value
Unit
VDSS
1000
Vdc
VDGR
1000
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
14
8.7
49
Adc

Derate above 25C
PD
300
2.4
Watts
W/C
TJ, Tstg
55 to 150

EAS
980
mJ

RJC
RJA
0.42
30
C/W
TL
260
Apk
41073
MTY14N100E
Characteristic
Symbol
Min
Typ
Max
Unit
1000
1.0
10
100
100
2.0
3.3
9.0
4.0
mV/C
0.67
0.8
Ohm
12.3
13.4
11.8
gFS
10
12
Ciss
7230
Coss
462
Crss
61
td(on)
49
tr
98
td(off)
132
OFF CHARACTERISTICS
(VGS = 0, ID = 0.250 mAdc)
V(BR)DSS

IDSS
IGSS
Vdc
V/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 7.0 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
mhos
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
pF

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 500 Vdc, ID = 14 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 500 Vdc, ID = 14 Adc,
VGS = 10 Vdc)
ns
tf
83
QT
142
Q1
34
Q2
46
Q3
56
1.36
1.26
1.5
trr
831
ta
364
tb
467
QRR
15.3
4.5
13
nC

Forward OnVoltage

(IS = 14 Adc, VGS = 0 Vdc, TJ = 125C)

(S Figure
Fi
(See
14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

41074
MTY14N100E
20
30
6V
18
VDS 10 V
VGS = 10 V
TJ = 25C
16
8V
14
12
5V
10
8
6
4
TJ = 55C
25
20
25C
15
100C
10
5
2
2
10
12
14
16
18
TJ = 100C
0.8
25C
0.4
55C
VGS = 10 V
1.6
1.2
20
12
16
20
28
24
0.85
TJ = 25C
0.8
0.75
VGS = 10 V
0.7
15 V
0.65
0.6
12
16
20
28
24

and Temperature

and Gate Voltage
2.5
100000
VGS = 10 V
ID = 7 A
VGS = 0 V
100C
1000
1.5
1.0
0.5
0
50
TJ = 125C
10000
2.0

(NORMALIZED)
100
25C
10
25
25
50
75
100
125
150
100
200
300
400
500
600
700
800

Temperature

900 1000
41075
MTY14N100E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
15000
VDS = 0 V
100000
TJ = 25C
VGS = 0 V
TJ = 25C
Ciss
12000
Ciss
10000
9000
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
VGS = 0 V
Ciss
Crss
6000
3000
1000
Coss
100
Crss
Coss
0
10
Crss
5
0
VGS
10
15
20
VDS
41076
25
10
10
100
1000

Variation
420
QT
10
350
VGS
280
Q1
210
Q2
TJ = 25C
ID = 14 A
140
70
2
0
VDS
Q3
0
25
50
75
100
125
1000
VDD = 1000 V
ID = 14 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTY14N100E
0
150
100
td(off)
tr
tf
td(on)
10
10
Figure 8. GatetoSource and DraintoSource


100

15
VGS = 0 V
TJ = 25C
12
0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41077
MTY14N100E
SAFE OPERATING AREA
10
1000
10 s
VGS = 20 V
SINGLE PULSE
TC = 25C

100
100 s
1 ms
10 ms
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

(NORMALIZED)
0.01
0.1
10
dc
100
ID = 14 A
800
600
400
200
0
1000
25
50
75
100
125
150

Safe Operating Area

1
D = 0.5
0.2
0.1
P(pk)
0.05
0.1
0.02
0.01
t1
SINGLE PULSE
t2
0.01
0.00001
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41078
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTY16N80E
TMOS POWER FET

16 AMPERES
800 VOLTS
RDS(on) = 0.50 OHM

commutation modes. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM
voltage transients.

G
S
TO264

Rating
Symbol
Value
Unit
VDSS
800
Vdc
VDGR
800
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
16
11
55
Adc

Derate above 25C
PD
300
2.4
Watts
W/C
TJ, Tstg
55 to 150
Apk

EAS

RJC
RJA
0.42
30
C/W
TL
260
mJ
1280
41079
MTY16N80E
Characteristic
Symbol
Min
Typ
Max
Unit
800
570
10
100
100
2.0
3.0
9.0
4.0
mV/C
0.42
0.5
Ohm
7.3
9.4
8.4
gFS
10
15
mhos
Ciss
7220
10110
pF
Coss
508
710
Crss
65
130
td(on)
52
100
tr
112
200
td(off)
122
240
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Vdc
mV/C
Adc
nAdc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125C)
VDS(on)
Vdc
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 400 Vdc, ID = 16 Adc,

VGS = 10 Vdc
Vdc,
RG = 4.7 )
Fall Time
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 400 Vdc, ID = 16 Adc,
VGS = 10 Vdc)
tf
100
200
QT
146
200
Q1
39
Q2
48
Q3
53
0.9
0.79
1.2
trr
995
ta
428
tb
567
QRR
20
4.5
13
ns
nC

Forward OnVoltage

(IS = 16 Adc, VGS = 0 Vdc, TJ = 125C)

(S Figure
Fi
(See
14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

41080
MTY16N80E
16
VGS = 10 V
TJ = 25C
8V
24
VDS 10 V
6V
32
16
5V
8
100C
12
8
25C
4
TJ = 55C
4V
2
10
12
14
16
18
0.9
VGS = 10 V
TJ = 100C
0.6
25C
0.3
55C
0
20
32
24
16
0.6
TJ = 25C
0.5
VGS = 10 V
15 V
0.4
12
16
20
24
28
32

and Temperature

and Gate Voltage
2.5
100000
VGS = 10 V
ID = 8 A
VGS = 0 V
100C
1000
1.5
1.0
0.5
0
50
TJ = 125C
10000
2.0

(NORMALIZED)
100
25C
10
25
25
50
75
100
125
150
100
200
300
400
500
600
700

Temperature

800
41081
MTY16N80E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
VDS = 0 V
12000
Ciss
8000
Crss
VGS = 0 V
100000
TJ = 25C
TJ = 25C
VGS = 0 V
10000
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
16000
Ciss
4000
Ciss
1000
Coss
100
Crss
Coss
0
10
Crss
5
0
VGS
10
15
20
VDS
41082
25
10
10
100
1000

Variation
400
QT
10
VGS
300
8
Q1
Q2
200
6
4
100
TJ = 25C
ID = 16 A
2
Q3
0
25
50
75
100
VDS
125
0
150
1000
VDD = 400 V
ID = 16 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTY16N80E
td(off)
tr
tf
td(on)
100
10
40
60
20
Figure 8. GatetoSource and DraintoSource


80
16
VGS = 0 V
TJ = 25C
12
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41083
MTY16N80E
SAFE OPERATING AREA
1400
10 s
VGS = 20 V
SINGLE PULSE
TC = 25C
10

100
100 s
1 ms
10 ms
dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

(NORMALIZED)
0.1
0.1
10
100
ID = 16 A
1200
1000
800
600
400
200
0
1000
25
50
75
100
125
150

Safe Operating Area

1
D = 0.5
0.2
0.1
0.05
0.1
P(pk)
0.02
0.01
t1
SINGLE PULSE
0.01
0.00001
t2
0.0001
0.001
0.01
0.1
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1
10
t, TIME (SECONDS)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41084
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTY20N50E
TMOS POWER FET

20 AMPERES
500 VOLTS
RDS(on) = 0.26 OHM

commutation modes. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM
voltage transients.

G
S
TO264

Symbol
Value
Unit
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
ID
IDM
20
13.9
60
Adc

Derate above 25C
PD
250
2.0
Watts
W/C
TJ, Tstg
55 to 150
Rating
Apk

EAS

RJC
RJA
0.50
40
C/W
TL
260
mJ
2000
41085
MTY20N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
583
Vdc
mV/C
10
100
100
nAdc
2.0
3.0
7.0
4.0
Vdc
mV/C
0.22
0.26
Ohm
4.75
6.2
6.5
gFS
11
16.2
mhos
Ciss
3880
6980
pF
Coss
452
920
Crss
96
140
td(on)
29
60
tr
90
170
td(off)
97
190
OFF CHARACTERISTICS
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 Vdc, ID = 20 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Fall Time
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
tf
84
170
QT
100
140
Q1
20
Q2
44
Q3
36
0.92
0.81
1.1
trr
431
ta
272
tb
159
QRR
6.67
3.5
4.5
7.5
ns
nC


(IS = 20 Adc, VGS = 0 Vdc, TJ = 125C)

(See Figure
Fig re 14)
dIS/dt = 100 A/s)
VSD
Vdc
ns

LD

LS
nH
nH

41086
MTY20N50E
TJ = 25C
40
VGS = 10 V
VDS 10 V
9V
32
40
8V
7V
6V
24
16
5V
32
24
16
100C
25C
TJ = 55C
0
4
8
12
16
6
10
14
18
0
2.0 2.4
20
0.6
VGS = 10 V
0.5
TJ = 100C
0.4
25C
0.3
0.2
55C
0.1
0
0
16
24
12
20
28
32
40
36
TJ = 25C
0.32
0.30
VGS = 10 V
0.28
0.26
15 V
0.24
0
16
24
12
20
28
32
36
40

and Gate Voltage
10000
2.4
VGS = 10 V
ID = 10 A
VGS = 0 V
TJ = 125C

(NORMALIZED)
6.8
0.34

and Temperature
2.0
6.4

2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0

1.6
1.2
0.8
1000
100C
100
10
25C
0.4
0
50
1
25
0
25
50
75
100
125
150

Temperature
50
100 150 200 250 300 350 400 450

500

41087
MTY20N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
9000
VDS = 0 V
8000
VGS = 0 V
C, CAPACITANCE (pF)
Ciss
6000
5000
Ciss
Crss
4000
3000
2000
1000
Coss
100
Coss
1000
0
TJ = 25C
Ciss
7000
C, CAPACITANCE (pF)
10000
TJ = 25C
VGS = 0 V
Crss
Crss
10
0
VGS
10
15
20
25
VDS
10
10
100
1000
41088
Figure 7b. High Voltage CapacitanceVariation
500
QT
400
VGS
Q1
Q2
300
200
4
ID = 20 A
TJ = 25C
2
100
VDS
Q3
0
10
20
30
40
50
60
70
80
90
0
100
1000
td(off)
VDD = 250 V
ID = 20 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
10
MTY20N50E
tr
tf
100
10
td(on)

Voltage versus Total Gate Charge
10
100

20
16
VGS = 0 V
TJ = 25C
12
4
0
0.50 0.54 0.58 0.62 0.66 0.70 0.74 0.78 0.82 0.86 0.90 0.94
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41089
MTY20N50E
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
TC = 25C
10
100 s
1 ms
1.0
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
2000
ID = 20 A
1600
1200
800
400
0.01
0.1
1.0
10
100
1000
25

Safe Operating Area
50
75
100
125
150

1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
0.01
t1
SINGLE PULSE
0.001
1.0E05
t2
1.0E03
1.0E04
1.0E02
t, TIME (s)
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41090
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTY25N60E
TMOS POWER FET

25 AMPERES
600 VOLTS
RDS(on) = 0.21 OHM

applications in power supplies, converters, PWM motor controls,
and other inductive loads. The avalanche energy capability is
specified to eliminate the guesswork in designs where inductive

D

TO264
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
600
Vdc
DrainGate Voltage (RGS = 1 M)
VDGR
600
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
25
65
Adc
Apk

Derate above 25C
PD
300
2.38
Watts
W/C
TJ, Tstg
55 to 150

EAS
3000
mJ

RJC
RJA
0.42
40
C/W
TL
260
Rating
REV 2
41091
MTY25N60E
Characteristic
Symbol
Min
Typ
Max
Unit
600
714
Vdc
mV/C
10
200
100
nAdc
Vdc
mV/C
0.21
Ohm
5.2
6
7
gFS
18
mhos
Ciss
7300
10220
pF
Coss
700
1100
Crss
110
250
td(on)
32
60
tr
90
175
td(off)
170
300
OFF CHARACTERISTICS
(VGS = 0, ID = 250 A)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 25 Adc)
(ID = 12.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 300 Vdc, ID = 25 Adc,

VGS = 10 Vdc
Vdc,
RG = 4.7 )
Fall Time
ns
tf
110
200
QT
240
350
Q1
30
Q2
110
Q3
65
0.9
0.8
1.2
trr
620
ta
310
tb
310
QRR
10.42

LD
4.5
nH

LS
7.5
nH
Gate Charge
(See Fig
Figure
re 8)
((VDS = 480 Vdc, ID = 25 Adc,
VGS = 10 Vdc)
nC

Forward OnVoltage

(IS = 25 Adc, VGS = 0 Vdc, TJ = 125C)

Fig re 14)
(See Figure
dIS/dt = 100 A/s)
VSD
Vdc
ns

41092
MTY25N60E
50
50
40
VDS 10 V
TJ = 25C
6V
VGS = 10 V
8V
5V
30
20
10
40
30
20
100C
TJ = 55C
10
4V
2
10
12
14
16
18
20
2.5
3.5
4.5
5.5
0.5
VGS = 10 V
TJ = 100C
0.4
0.3
25C
0.2
55C
0.1
10
20
30
40
50
25C
0
0.26
TJ = 25C
0.24
0.22
VGS = 10 V
15 V
0.2
0.18
10
20
30
40
50

and Temperature

and Gate Voltage
2.5
10000
VGS = 10 V
ID = 12.5 A
TJ = 125C
1000

(NORMALIZED)
1.5
100C
100
VGS = 0 V
25C
10
0.5
0
50
25
25
50
75
100
125
150
100
200
300
400
500

Temperature

600
41093
MTY25N60E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
24000
VDS = 0 V
VGS = 0 V
Ciss
20000
TJ = 25C
TJ = 25C
Ciss
10000
16000
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
100000
VGS = 0 V
Crss
12000
Ciss
8000
Coss
4000
1000
Coss
100
Crss
Crss
0
10
0
VGS
10
15
20
VDS
41094
25
10
10
100
1000

Variation
600
QT
10
500
400
VGS
300
Q2
Q1
TJ = 25C
ID = 25 A
4
2
0
200
100
VDS
Q3
0
50
100
150
0
250
200
10000
t, TIME (ns)
12
MTY25N60E
VDD = 300 V
ID = 25 A
VGS = 10 V
TJ = 25C
1000
td(off)
tf
tr
100
td(on)
10
10
Figure 8. Gate Charge versus GatetoSource Voltage
100

25
VGS = 0 V
TJ = 25C
20
15
10
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41095
MTY25N60E
SAFE OPERATING AREA
3000
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10 s
10
100 s
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

(NORMALIZED)
0.1
0.1
10
100
ID = 25 A
2500
2000
1500
1000
500
0
1000
25
50
75
100
125
150

Safe Operating Area

1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41096
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTY30N50E
TMOS POWER FET

30 AMPERES
500 VOLTS
RDS(on) = 0.15 OHM


D

TO264
S

Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
VDGR
500
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
30
80
Adc
Apk

Derate above 25C
PD
300
2.38
Watts
W/C
TJ, Tstg
55 to 150

EAS
3000
mJ

RJC
RJA
0.42
40
C/W
TL
260
Rating
REV 2
41097
MTY30N50E
Characteristic
Symbol
Min
Typ
Max
Unit
500
566
Vdc
mV/C
10
200
100
nAdc
Vdc
mV/C
0.15
Ohm
4.1
5
7
gFS
17
mhos
Ciss
7200
10080
pF
Coss
775
1200
Crss
120
250
td(on)
32
60
tr
105
175
td(off)
160
275
OFF CHARACTERISTICS
(VGS = 0, ID = 250 A)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 30 Adc)
(ID = 15 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 250 Vdc, ID = 30 Adc,

VGS = 10 Vdc
Vdc,
RG = 4.7 )
Fall Time
ns
tf
115
200
QT
235
350
Q1
35
Q2
110
Q3
65
0.95
0.88
1.2
trr
485
ta
312
tb
173
QRR
8.2

LD
4.5
nH

LS
13
nH
Gate Charge
(See Fig
Figure
re 8)
((VDS = 400 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
nC

Forward OnVoltage

(IS = 30 Adc, VGS = 0 Vdc, TJ = 125C)

Fig re 14)
(See Figure
dIS/dt = 100 A/s)
VSD
Vdc
ns

41098
MTY30N50E
60
60
VGS = 10 V
TJ = 25C
VDS 10 V
6V
50
8V
40
30
5V
20
50
40
30
20
100C
TJ = 55C
10
10
25C
4V
0
10
12
3.5
4.5
5.5
6.5
0.2
25C
0.15
0.1
55C
0.05
10
20
30
40
50
60
TJ = 100C
2.5
0.25
VGS = 10 V
0.3
0.35
0.17
TJ = 25C
0.16
0.15
VGS = 10 V
0.14
15 V
0.13
0.12
10
20
30
40
50
60

and Temperature

and Gate Voltage
2.5
10000
TJ = 125C
VGS = 10 V
ID = 15 A
1000

(NORMALIZED)
1.5
0.5
0
50
25
25
50
75
100
125
150
100C
100
VGS = 0 V
25C
10
100
200
300
400

Temperature

500
41099
MTY30N50E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
24000
VDS = 0 V
VGS = 0 V
Ciss
10000
16000
12000
TJ = 25C
TJ = 25C
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
20000
100000
VGS = 0 V
Crss
Ciss
8000
Coss
4000
Ciss
1000
Coss
100
Crss
Crss
0
10
0
VGS
10
15
20
VDS
41100
25
10
10
100
1000

Variation
600
QT
10
500
400
VGS
300
Q2
Q1
TJ = 25C
ID = 30 A
4
2
0
200
100
VDS
Q3
0
50
100
150
0
250
200
10000
t, TIME (ns)
12
MTY30N50E
VDD = 250 V
ID = 30 A
VGS = 10 V
TJ = 25C
1000
td(off)
tf
tr
100
td(on)
10
10
100

30
VGS = 0 V
TJ = 25C
20
10
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41101
MTY30N50E
SAFE OPERATING AREA
3000
VGS = 20 V
SINGLE PULSE
TC = 25C

100
10 s
10
100 s
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

(NORMALIZED)
0.1
0.1
10
100
2500
ID = 30 A
2000
1500
1000
500
0
1000
25
50
75
100
125
150

Safe Operating Area

1
D = 0.5
0.2
0.1
P(pk)
0.05
0.1
0.02
0.01
t1
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41102
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTY55N20E
TMOS POWER FET

55 AMPERES
200 VOLTS
RDS(on) = 0.028 OHM


D

TO264
S
Symbol
Value
Unit
DrainSource Voltage
VDSS
200
Vdc
VDGR
200
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
55
165
Adc
Apk

Derate above 25C
PD
300
2.38
Watts
W/C
TJ, Tstg
55 to 150

EAS
3000
mJ

RJC
RJA
0.42
40
C/W
TL
260
Rating
REV 2
41103
MTY55N20E
Characteristic
Symbol
Min
Typ
Max
Unit
200
250
Vdc
mV/C
10
200
100
nAdc
Vdc
mV/C
0.028
Ohm
1.3
1.6
1.8
gFS
30
37
mhos
Ciss
7200
10080
pF
Coss
1800
2520
Crss
460
920
td(on)
33
66
tr
200
400
td(off)
150
300
OFF CHARACTERISTICS
(VGS = 0, ID = 250 A)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 55 Adc)
(ID = 27.5 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1 MHz)

TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 100 Vdc, ID = 55 Adc,

VGS = 10 Vdc
Vdc,
RG = 4.7 )
Fall Time
ns
tf
170
340
QT
245
343
Q1
33
Q2
128
Q3
79
0.75
1.1
1.2
trr
310
ta
220
tb
90
QRR
4.6

LD
4.5
nH

LS
13
nH
Gate Charge
(See Fig
Figure
re 8)
((VDS = 160 Vdc, ID = 55 Adc,
VGS = 10 Vdc)
nC

Forward OnVoltage

(IS = 55 Adc, VGS = 0 Vdc, TJ = 125C)

Fig re 14)
(See Figure
dIS/dt = 100 A/s)
VSD
Vdc
ns

41104
MTY55N20E
120
120
VDS 10 V
7V
100
8V
VGS = 10 V
TJ = 25C
9V
80
6V
60
40
5V
100
80
60
40
100C
TJ = 55C
20
20
4V
0.5
1.5
2.5
3.5
2.5
3.5
4.5
5.5
0.05
VGS = 10 V
TJ = 100C
0.04
0.03
25C
0.02
55C
0.01
20
40
60
80
100
120
25C
0
6.5
0.027
TJ = 25C
0.026
VGS = 10 V
0.025
0.024
15 V
0.023
0.022
20
40
60
80
100
120

and Temperature

and Gate Voltage
2
1.75
10000
VGS = 0 V
VGS = 10 V
ID = 27.5 A
1.5
TJ = 125C
1000

(NORMALIZED)
1.25
1
0.75
0.5
100C
100
10
25C
0.25
0
50
25
25
50
75
100
125
150
50
100
150

Temperature

200
41105
MTY55N20E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
24000
VDS = 0 V
C, CAPACITANCE (pF)
20000
VGS = 0 V
TJ = 25C
Ciss
16000
Crss
12000
Ciss
8000
Coss
4000
Crss
0
10
0
VGS
10
15
20
25
VDS
41106
240
10
200
QT
160
VGS
Q2
120
Q1
TJ = 25C
ID = 55 A
4
2
0
80
40
VDS
Q3
0
50
100
150
0
250
200
1000
VDD = 100 V
ID = 55 A
VGS = 10 V
TJ = 25C
t, TIME (ns)
12
MTY55N20E
100
tr
tf
td(off)
td(on)
10
10
100


60
50
VGS = 0 V
TJ = 25C
40
30
20
10
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41107
MTY55N20E
SAFE OPERATING AREA
3000
1000
VGS = 20 V
SINGLE PULSE
TC = 25C
100
10 s
100 s
10

(NORMALIZED)
1
0.1
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
10
100
ID = 55 A
2000
1000
1000
25
50
75
100
125
150

Safe Operating Area

1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41108
MOTOROLA
Data Sheet
TMOS E-FET.
Designer's
MTY100N10E
TMOS POWER FET

100 AMPERES
100 VOLTS
RDS(on) = 0.011 OHM


D

TO264
S
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
VDGR
100
Vdc

VGS
VGSM
20
40
Vdc
Vpk

ID
IDM
100
300
Adc
Apk

Derate above 25C
PD
300
2.38
Watts
W/C
TJ, Tstg
55 to 150

EAS
250
mJ

RJC
RJA
0.42
40
C/W
TL
260
Rating
REV 2
41109
MTY100N10E
Characteristic
Symbol
Min
Typ
Max
Unit
100
115
Vdc
mV/C
10
200
100
nAdc
2.0
Vdc
mV/C
0.011
Ohm
1.0
1.2
1.0
gFS
30
49
mhos
Ciss
7600
10640
pF
Coss
3300
4620
Crss
1200
2400
td(on)
48
96
tr
490
980
td(off)
186
372
OFF CHARACTERISTICS
(VGS = 0, ID = 250 A)
V(BR)DSS

IDSS
IGSS
Adc
VGS(th)
RDS(on)

(ID = 100 Adc)
(ID = 50 Adc, TJ = 125C)
VDS(on)
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1 MHz)
Output Capacitance
TurnOn Delay Time
(VDD = 50 Vdc, ID = 100 Adc,

VGS = 10 Vdc
Vdc,
RG = 9.1 )
Rise Time
TurnOff Delay Time
Fall Time
ns
tf
384
768
QT
270
378
Q1
50
Q2
150
Q3
118
1
0.9
1.2
trr
145
ta
90
tb
55
QRR
2.34

LD
4.5
nH

LS
13
nH
Gate Charge
(S Fi
(See
Figure 8)
((VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
nC

Forward OnVoltage

(IS = 100 Adc, VGS = 0 Vdc, TJ = 125C)

(S Figure
Fi
(See
14)
((IS = 100 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
VSD
Vdc
ns

41110
MTY100N10E
VGS = 10 V
9V
160
120
TJ = 25C
8V
7V
200
120
6V
80
40
VDS 10 V
100
80
60
40
100C
20
5V
TJ = 55C
25C
10
VGS = 10 V
TJ = 100C
0.014
0.012
25C
0.01
0.008
55C
50
150
100
200
0.016
0.006
0.018
10
0.011
TJ = 25C
VGS = 10 V
0.0105
0.01
0.0095
15 V
0.009
0.0085
0.008
50
100
150
200

and Temperature

and Gate Voltage
1.8
1.6
1000000
VGS = 0 V
VGS = 10 V
ID = 50 A
100000

(NORMALIZED)
1.4
1.2
1
1000
100C
100
25C
10
0.8
0.6
50
TJ = 125C
25
25
50
75
100
125
150
20
40
60
80
100

Temperature

120
41111
MTY100N10E

switching losses.
t = Q/IG(AV)
tf = Q2 x RG/VGSP
where
24000
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
20000
Ciss
16000
12000
Crss
Ciss
8000
Coss
4000
Crss
0
10
0
VGS
10
15
20
25
VDS
41112
120
QT
10
100
VGS
80
Q2
Q1
6
60
TJ = 25C
ID = 100 A
4
2
0
40
20
VDS
Q3
0
50
100
150
0
300
250
200
10000
t, TIME (ns)
12
MTY100N10E
VDD = 50 V
ID = 100 A
VGS = 10 V
TJ = 25C
1000
tr
tf
td(off)
100
td(on)
10
10
100

100
VGS = 0 V
TJ = 25C
80
60
40
20
0
0.5
0.6
0.7
0.8
0.9
1.1
SAFE OPERATING AREA

Data and Its Use.
(TJ(MAX) TC)/(RJC).
temperature.
41113
MTY100N10E
SAFE OPERATING AREA
250
VGS = 20 V
SINGLE PULSE
TC = 25C

1000
10 s
100
100 s
1 ms
10
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

(NORMALIZED)
1
0.1
10
ID = 100 A
200
150
100
50
100
25
50
75
100
125
150

Safe Operating Area

1
D = 0.5
0.2
0.1
P(pk)
0.05
0.1
0.02
0.01
t1
t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
41114
Section Five
Surface Mount Package Information
Table of Contents
Page
Surface Mount Package Information . . . . . . . . . . . . . . . . 52
Power Dissipation for a Surface Mount Device . . . . . 52
Solder Stencil Guidelines . . . . . . . . . . . . . . . . . . . . . . . 53
Soldering Precautions . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Typical Solder Heating Profile . . . . . . . . . . . . . . . . . . . 54
Footprints for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . 55
Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . . . 56
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Embossed Tape and Reel Data . . . . . . . . . . . . . . . . . . 57
51
INFORMATION FOR USING SURFACE MOUNT PACKAGES

RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to ensure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self align when subjected to a

solder reflow process.
The power dissipation for a surface mount device is a

function of the drain/collector pad size. These can vary from
the minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a surface
mount device is determined by TJ(max), the maximum rated
junction temperature of the die, RJA, the thermal resistance
from the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data sheet,
PD can be calculated as follows:
PD =
TJ(max) TA
RJA
The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25C, one can
calculate the power dissipation of the device. For example, for
a SOT223 device, PD is calculated as follows.
RJA , THERMAL RESISTANCE, JUNCTION

TO AMBIENT (C/W)
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE

160
Board Material = 0.0625
G10/FR4, 2 oz Copper
140
TA = 25C
0.8 Watts
120
1.5 Watts
1.25 Watts*
100
80
0.0
*Mounted on the DPAK footprint

0.2
0.4
0.6
A, AREA (SQUARE INCHES)
0.8
1.0
Figure 1. Thermal Resistance versus Drain Pad

Area for the SOT223 Package (Typical)
The 156C/W for the SOT223 package assumes the use

of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 800 milliwatts. There
are other alternatives to achieving higher power dissipation
from the surface mount packages. One is to increase the area
of the drain/collector pad. By increasing the area of the
drain/collector pad, the power dissipation can be increased.
Although the power dissipation can almost be doubled with
this method, area is taken up on the printed circuit board which
can defeat the purpose of using surface mount technology.
For example, a graph of RJA versus drain pad area is shown
in Figures 1, 2 and 3.
Another alternative would be to use a ceramic substrate or

an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

1.75 Watts
80
TA = 25C
60
3.0 Watts
40
5.0 Watts
20
0
4
6
10

Area for the DPAK Package (Typical)
TO AMBIENT (C/W)
PD = 150C 25C = 800 milliwatts

156C/W

TO AMBIENT (C/W)
100
70
60
TA = 25C
2.5 Watts
50
3.5 Watts
40
5 Watts
30
20
6
8
10
12
14
16

Area for the D2PAK Package (Typical)
Surface Mount Information

52
SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. Solder
stencils are used to screen the optimum amount. These
stencils are typically 0.008 inches thick and may be made of
brass or stainless steel. For packages such as the SOT223,
SO8 and Micro8, the stencil opening should be the same as
the pad size or a 1:1 registration. This is not the case with the
DPAK, D2PAK and D3PAK packages. If a 1:1 opening is used
to screen solder onto the drain pad, misalignment and/or
tombstoning may occur due to an excess of solder. For these
two packages, the opening in the stencil for the paste should
be approximately 50% of the tab area. The opening for the
leads is still a 1:1 registration. Figure 4 shows a typical stencil
for the DPAK, D2PAK and D3PAK packages. The pattern of the
opening in the stencil for the drain pad is not critical as long as
it allows approximately 50% of the pad to be covered with

paste.
SOLDER PASTE
OPENINGS
STENCIL
Figure 4. Typical Stencil for DPAK,

D2PAK and D3PAK Packages
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10C.
The soldering temperature and time should not exceed
260C for more than 10 seconds.
When shifting from preheating to soldering, the maximum

temperature gradient shall be 5C or less.
After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes.
Gradual cooling should be used since the use of forced
cooling will increase the temperature gradient and will
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
* Due to shadowing and the inability to set the wave height to
incorporate other surface mount components, the D2PAK and
D3PAK are not recommended for wave soldering.

53
TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones and a figure
for belt speed. Taken together, these control settings make up
a heating profile for that particular circuit board. On machines
controlled by a computer, the computer remembers these
profiles from one operating session to the next. Figure 5 shows
a typical heating profile for use when soldering a surface
mount device to a printed circuit board. This profile will vary
among soldering systems, but it is a good starting point.
Factors that can affect the profile include the type of soldering
system in use, density and types of components on the board,
type of solder used, and the type of board or substrate material
being used. This profile shows temperature versus time. The
line on the graph shows the actual temperature that might be
STEP 1
PREHEAT
ZONE 1
RAMP
200C
STEP 2
STEP 3
VENT
HEATING
SOAK ZONES 2 & 5
RAMP
DESIRED CURVE FOR HIGH

MASS ASSEMBLIES
experienced on the surface of a test board at or near a central

solder joint. The two profiles are based on a high density and
a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this
profile. The type of solder used was 62/36/2 Tin Lead Silver
with a melting point between 177 189C. When this type of
furnace is used for solder reflow work, the circuit boards and
solder joints tend to heat first. The components on the board
are then heated by conduction. The circuit board, because it
has a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may be
up to 30 degrees cooler than the adjacent solder
joints.
STEP 4
STEP 5
HEATING
HEATING
ZONES 3 & 6 ZONES 4 & 7
SOAK
SPIKE
STEP 6
VENT
STEP 7
COOLING
205 TO 219C
PEAK AT
SOLDER JOINT
170C
160C
150C
150C
100C
SOLDER IS LIQUID FOR

40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
140C
100C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 5. Typical Solder Heating Profile

54
Footprints for Soldering

0.15
3.8
0.060
1.52
0.079
2.0
0.275
7.0
0.155
4.0
0.024
0.6
0.091
2.3
0.091
2.3
0.079
2.0
0.050
1.270
0.059
1.5
inches
mm
SO8
0.248
6.3
0.059
1.5
0.059
1.5
inches
mm
SOT223
0.33
8.38
0.165
4.191
0.08
2.032
0.42
10.66
0.24
6.096
0.04
1.016
0.100
2.54
0.118
3.0
0.063
1.6
0.190
4.826
0.243
6.172
0.12
3.05
0.63
17.02
inches
mm
inches
D2PAK
0.531
13.5
DPAK
0.864
21.95
1.04
(0.041)
mm
0.38 8X
(0.015)
8X
0.197
5.0
0.118
3.0
0.653
16.6
0.215
5.45
0.5
12.7
inches
D3PAK
3.20
(0.126)
4.24
(0.167)
5.28
(0.208)
0.65
(0.0256) 6X
mm
Micro8

55

Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure
cavity for the product when sealed with the peelback cover tape.
Two Reel Sizes Available (7 and 13)

Used for Automatic Pick and Place Feed Systems
Minimizes Product Handling
EIA 481, 1, 2
Micro8, SO8 and SOT223 in 12 mm Tape

DPAK in 16 mm Tape
D2PAK in 24 mm Tape
D3PAK in 24 mm Tape
Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual
reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is
one full reel for each line item, and orders are required to be in increments of the single reel quantity.
SOT223
SO8
DPAK
12 mm
12 mm
16 mm
D2PAK
D3PAK
Micro8
24 mm
24 mm
12 mm
DIRECTION
OF FEED
EMBOSSED TAPE AND REEL ORDERING INFORMATION
Package
Tape Width
(mm)
Pitch
mm
(inch)
Reel Size
mm
(inch)
Devices Per Reel

and Minimum
Order Quantity
Device
Suffix
DPAK
16
8.0 0.1 (.315 .004)
330
(13)
2,500
T4
D2PAK
24
16.0 0.1 (.630 .004)
330
(13)
800
T4
D3PAK
24
24.0 0.1 (.944 .004)
330
(13)
500
RL
SO8
12
12
8.0 0.1 (.315 .004)
178
330
(7)
(13)
500
2,500
R1
R2
SOT223
12
12
8.0 0.1 (.315 .004)
178
330
(7)
(13)
1,000
4,000
T1
T3
Micro8
12
8.0 0.1 (.315 .004)
330
(13)
4000
R2

56
EMBOSSED TAPE AND REEL DATA FOR DISCRETES

CARRIER TAPE SPECIFICATIONS
P0
P2
10 Pitches Cumulative Tolerance on Tape

0.2 mm
( 0.008)
E
Top Cover
Tape
A0
K0
B1
B0
See
Note 1
For Machine Reference Only

Including Draft and RADII
Concentric Around B0
D1
For Components
2.0 mm x 1.2 mm and Larger
Center Lines
of Cavity
Embossment
User Direction of Feed

* Top Cover Tape
Thickness (t1)
0.10 mm
(.004) Max.
Bar Code Label

R Min
Tape and Components
Shall Pass Around Radius R
Without Damage
Bending Radius
10
Embossed Carrier
100 mm
(3.937)
Maximum Component Rotation
Embossment
1 mm Max
Typical Component
Cavity Center Line
Tape
1 mm
(.039) Max
Typical Component
Center Line
250 mm
(9.843)
Camber (Top View)

Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
DIMENSIONS
Tape
Size
B1 Max
D1
P0
P2
R Min
T Max
W Max
12 mm
8.2 mm
(.323)
1.5 mm Min
(.060)
1.75 0.1 mm
(.069 .004)
5.5 0.05 mm
(.217 .002)
6.4 mm Max
(.252)
4.0 0.1 mm
(.157 .004)
2.0 0.1 mm
(.079 .002)
30 mm
(1.18)
0.6 mm
(.024)
12 .30 mm
(.470 .012)
16 mm
12.1 mm
(.476)
1.5 + 0.1 mm
0.0
(.059
.0 + .004
.004
0.0)
7.5 0.10 mm
(.295 .004)
7.9 mm Max
(.311)
16.3 mm
(.642)
24 mm
20.1 mm
(.791)
11.5 0.1 mm
(.453 .004)
11.9 mm Max
(.468)
24.3 mm
(.957)
Metric dimensions govern English are in parentheses for reference only.

NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max.,
NOTE 1: the component cannot rotate more than 10 within the determined cavity.
NOTE 2: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 56.

57
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
T Max
Outside Dimension
Measured at Edge
1.5 mm Min
(.06)
A
13.0 mm 0.5 mm
(.512 .002)
20.2 mm Min
(.795)
50 mm Min
(1.969)
Full Radius
Size
A Max
12 mm
330 mm
(12.992)
12.4 mm + 2.0 mm, 0.0

(.49 + .079, 0.00)
18.4 mm
(.72)
16 mm
360 mm
(14.173)
16.4 mm + 2.0 mm, 0.0

(.646 + .078, 0.00)
22.4 mm
(.882)
24 mm
360 mm
(14.173)
24.4 mm + 2.0 mm, 0.0

(.961 + .070, 0.00)
30.4 mm
(1.197)
Inside Dimension
Measured Near Hub
T Max
Reel Dimensions
Metric Dimensions Govern English are in parentheses for reference only

58
Section Six
Package Outline Dimensions
and Footprints

61
T
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
F
T
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
Q
1 2 3
H
K
Z
L
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
G
D
CASE 221A06
(TO220AB)
ISSUE Y
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
2.04
0.15
3.8
0.079
2.0
A
F
0.091
2.3
0.248
6.3
0.091
2.3
B
1
0.079
2.0
D
0.059
1.5
G
J
0.059
1.5
0.059
1.5
inches
mm
SOT223 FOOTPRINT
C
0.08 (0003)
NOTES:
Y14.5M, 1982.
K
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
CASE 318E04
(SOT223)
ISSUE H

62
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10 _
6.70
7.30
PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)
0.25 (0.010)
Q
T B M
NOTES:
Y14.5M, 1982.
E
B
C
4
U
A
R
1
D
0.25 (0.010)
Y Q
0.25 (0.010)
T B
STYLE 1:
PIN 1.
2.
3.
4.
T
C
E
U
N
A
1
Y
P
K
F 2 PL
G
D
INCHES
MIN
MAX
0.803
0.823
0.608
0.628
0.185
0.205
0.043
0.051
0.059
0.064
0.071
0.086
0.215 BSC
0.101
0.113
0.019
0.027
0.613
0.633
0.286
0.295
0.122
0.133
0.138
0.145
0.130
0.150
0.209 BSC
0.120
0.134
J
H
3 PL
0.25 (0.010)
Y Q
CASE 340G02
(TO264)
ISSUE E
GATE
DRAIN
SOURCE
DRAIN
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
20.40
20.90
15.44
15.95
4.70
5.21
1.09
1.30
1.50
1.63
1.80
2.18
5.45 BSC
2.56
2.87
0.48
0.68
15.57
16.08
7.26
7.50
3.10
3.38
3.50
3.70
3.30
3.80
5.30 BSC
3.05
3.40
CASE 340F03
(TO247)
ISSUE E
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
NOTES:
Y14.5M, 1982.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
MILLIMETERS
MIN
MAX
2.8
2.9
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.0
11.4
3.95
4.75
2.2
2.6
3.1
3.5
2.15
2.35
6.1
6.5
2.8
3.2
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.433
0.449
0.156
0.187
0.087
0.102
0.122
0.137
0.085
0.093
0.240
0.256
0.110
0.125
STYLE 5:
PIN 1. GATE
2. COLLECTOR
3. EMITTER

63

SEATING
PLANE
T
C
B
V
NOTES:
Y14.5M, 1982.
R
4
S
1
K
F
J
L
H
D
0.165
4.191
2 PL
0.13 (0.005)
0.100
2.54
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
0.030
0.050
0.138
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
0.118
3.0
STYLE 2:
PIN 1.
2.
3.
4.
0.063
1.6
0.190
4.826
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
0.77
1.27
3.51
0.243
6.172
GATE
DRAIN
SOURCE
DRAIN
inches
mm
DPAK FOOTPRINT
CASE 369A13
(DPAK)
ISSUE W
NOTES:
Y14.5M, 1982.
C
E
STYLE 2:
PIN 1.
2.
3.
4.
B
4
DIM
A
B
C
D
E
G
H
J
K
S
V
GATE
DRAIN
SOURCE
DRAIN
A
1
0.33
8.38
T
SEATING
PLANE
INCHES
MIN
MAX
0.340
0.380
0.380
0.405
0.160
0.190
0.020
0.035
0.045
0.055
0.100 BSC
0.080
0.110
0.018
0.025
0.090
0.110
0.575
0.625
0.045
0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65
10.29
4.06
4.83
0.51
0.89
1.14
1.40
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
14.60
15.88
1.14
1.40
K
J
G
D
0.08
2.032
3 PL
0.13 (0.005)
0.42
10.66
0.24
6.096
0.04
1.016
0.12
3.05
0.63
17.02
CASE 418B02
(D2PAK)
ISSUE B

64
D2PAK FOOTPRINT
inches
mm

SEATING
PLANE
T
B
W
R
NOTES:
Y14.5M, 1982.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
V
W
X
Y
Y
V
N
U
L
2 PL
D 2 PL
0.13 (0.005)
STYLE 2:
PIN 1.
2.
3.
4.
0.531
13.5
0.864
21.95
0.197
5.0
GATE
DRAIN
SOURCE
DRAIN
INCHES
MIN
MAX
0.588
0.592
0.623
0.627
0.196
0.200
0.048
0.052
0.058
0.062
0.078
0.082
0.430 BSC
0.105
0.110
0.018
0.022
0.150
0.160
0.058
0.062
0.353
0.357
0.078
0.082
0.053
0.057
0.623
0.627
0.313
0.317
0.028
0.032
0.050
0.054
0.058
0.050
0.060
0.104
0.108
MILLIMETERS
MIN
MAX
14.94
15.04
15.82
15.93
4.98
5.08
1.22
1.32
1.47
1.57
1.98
2.08
1.092 BSC
2.67
2.79
0.46
0.56
3.81
4.06
1.47
1.57
8.97
9.07
1.98
2.08
1.35
1.45
15.82
15.93
7.95
8.05
0.71
0.81
1.27
1.37
1.47
1.27
1.52
2.64
2.74
0.118
3.0
0.653
16.6
0.215
5.45
inches
0.5
12.7
mm
D3PAK FOOTPRINT
CASE 43301
ISSUE B
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
Y14.5M, 1982.
B
1
F
A
NOTE 2
C
J
T
N
SEATING
PLANE
D
H
G
0.13 (0.005)
T A
DIM
A
B
C
D
F
G
H
J
K
L
M
N
MILLIMETERS
MIN
MAX
9.40
10.16
6.10
6.60
3.94
4.45
0.38
0.51
1.02
1.78
2.54 BSC
0.76
1.27
0.20
0.30
2.92
3.43
7.62 BSC
10_
0.76
1.01
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
INCHES
MIN
MAX
0.370
0.400
0.240
0.260
0.155
0.175
0.015
0.020
0.040
0.070
0.100 BSC
0.030
0.050
0.008
0.012
0.115
0.135
0.300 BSC
10_
0.030
0.040
AC IN
DC + IN
DC IN
AC IN
GROUND
OUTPUT
AUXILIARY
VCC
CASE 62605
ISSUE K

65
14
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
A
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
L
C
J
N
H
SEATING
PLANE
K
M
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.300 BSC
0_
10_
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
19.56
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.62 BSC
0_
10_
0.39
1.01
CASE 64606
ISSUE L
28
NOTES:
1. POSITIONAL TOLERANCE OF LEADS (D), SHALL
BE WITHIN 0.25 (0.010) AT MAXIMUM MATERIAL
CONDITION, IN RELATION TO SEATING PLANE
AND EACH OTHER.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
15
DIM
A
B
C
D
F
G
H
J
K
L
M
N
14
A
N
F
D
SEATING
PLANE
MILLIMETERS
MIN
MAX
36.45
37.21
13.72
14.22
3.94
5.08
0.36
0.56
1.02
1.52
2.54 BSC
1.65
2.16
0.20
0.38
2.92
3.43
15.24 BSC
0_
15_
0.51
1.02
INCHES
MIN
MAX
1.435
1.465
0.540
0.560
0.155
0.200
0.014
0.022
0.040
0.060
0.100 BSC
0.065
0.085
0.008
0.015
0.115
0.135
0.600 BSC
0_
15_
0.020
0.040
CASE 71002
ISSUE B

66
A
M
1
4
0.25 (0.010)
4X
X 45 _
B
M
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
M_
G
DIM
A
B
C
D
F
G
J
K
M
P
R
T
K
SEATING
PLANE
8X
D
0.25 (0.010)
STYLE 11:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
STYLE 12:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
T B
STYLE 13:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
N.C.
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
STYLE 14:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.18
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
NSOURCE
NGATE
PSOURCE
PGATE
PDRAIN
PDRAIN
NDRAIN
NDRAIN
0.060
1.52
0.275
7.0
0.155
4.0
0.024
0.6
0.050
1.270
inches
mm
SO8 FOOTPRINT
CASE 75105
(SO8)
ISSUE P

67
A
16
8X
P
0.010 (0.25)
NOTES:
Y14.5M, 1982.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN
EXCESS OF D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
16X
0.010 (0.25)
T A
F
DIM
A
B
C
D
F
G
J
K
M
P
R
R X 45 _
C
T
14X
SEATING
PLANE
MILLIMETERS
MIN
MAX
10.15
10.45
7.40
7.60
2.35
2.65
0.35
0.49
0.50
0.90
1.27 BSC
0.25
0.32
0.10
0.25
0_
7_
10.05
10.55
0.25
0.75
INCHES
MIN
MAX
0.400
0.411
0.292
0.299
0.093
0.104
0.014
0.019
0.020
0.035
0.050 BSC
0.010
0.012
0.004
0.009
0_
7_
0.395
0.415
0.010
0.029
CASE 751G02
ISSUE A
NOTES:
Y14.5M, 1982.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION D DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
PIN 1 ID
DIM
A
B
C
D
G
H
J
K
L
MILLIMETERS
MIN
MAX
2.90
3.10
2.90
3.10
1.10
0.25
0.40
0.65 BSC
0.05
0.15
0.13
0.23
4.75
5.05
0.40
0.70
INCHES
MIN
MAX
0.114
0.122
0.114
0.122
0.043
0.010
0.016
0.026 BSC
0.002
0.006
0.005
0.009
0.187
0.199
0.016
0.028
G
D 8 PL
0.08 (0.003)
T B
0.38 8X
(0.015)
1.04
(0.041)
8X
SEATING
PLANE
0.038 (0.0015)
C
J
H
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
3.20
(0.126)
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
5.28
(0.208)
0.65
(0.0256) 6X
CASE 846A02
ISSUE B

68
4.24
(0.167)
MICRO8 FOOTPRINT
H
B
Q
G
M N
D
E
F
Recommended screw torque: 1.3
Maximum screw torque: 1.5 Nm
" 0.2 Nm
SOT227B
NOTES:
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM
A
B
C
D
E
F
G
H
L
M
N
P
Q
R
S
MILLIMETERS
MIN
MAX
31.50
31.70
7.80
8.20
4.10
4.30
14.90
15.10
30.10
30.30
38.00
38.20
4.00
11.80
12.20
8.90
9.10
12.60
12.80
25.20
25.40
1.95
2.05
4.10
0.75
0.85
5.50
STYLE 1:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
1.240
1.248
0.307
0.322
0.161
0.169
0.586
0.590
1.185
1.193
1.496
1.503
0.157
0.464
0.480
0.350
0.358
0.496
0.503
0.992
1.000
0.076
0.080
0.157
0.030
0.033
0.217
SOURCE
GATE
DRAIN
SOURCE 2

69

610
Section Seven

71
5/1/96
MOTOROLA AUTHORIZED DISTRIBUTOR & WORLDWIDE SALES OFFICES

NORTH AMERICAN DISTRIBUTORS
FAI . . . . . . . . . . . . . . . . . . . . . . . . (408)4340369
Future Electronics . . . . . . . . . . . . (408)4341122
UNITED STATES
ALABAMA
Huntsville
Santa Clara
Arrow/Schweber Electronics . . . (205)8376955

FAI . . . . . . . . . . . . . . . . . . . . . . . . (205)8379209
Future Electronics . . . . . . . . . . . (205)8302322
Hamilton/Hallmark . . . . . . . . . . . (205)8378700
Newark . . . . . . . . . . . . . . . . . . . . (205)8379091
Time Electronics . . . . . . . . . . 1800789TIME
Wyle Electronics . . . . . . . . . . . . . (205)8301119
ARIZONA
Phoenix
Sierra Madre
PENSTOCK . . . . . . . . . . . . . . . . (818)3556775
Sunnyvale
PENSTOCK . . . . . . . . . . . . . . . . (408)7300300
Thousand Oaks
Newark . . . . . . . . . . . . . . . . . . . . (805)4491480
FAI . . . . . . . . . . . . . . . . . . . . . . . . (602)7314661
Hamilton/Hallmark . . . . . . . . . . . . (602)4143000
Wyle Electronics . . . . . . . . . . . . (602)8047000
Tempe
Newark . . . . . . . . . . . . . . . . . . . . (602)9666340
PENSTOCK . . . . . . . . . . . . . . . . (602)9671620
CALIFORNIA
Agoura Hills
Torrance
Tustin
Woodland Hills
Richardson Electronics . . . . . . (615)5945600
COLORADO
Lakewood
Belmont
Calabassas
FAI . . . . . . . . . . . . . . . . . . . . . . . . (303)2371400
Newark . . . . . . . . . . . . . . . . . . . . (303)3734540
Englewood
Hamilton/Hallmark . . . . . . . . . . (303)7901662
PENSTOCK . . . . . . . . . . . . . . . . (303)7997845
Thornton
Chatsworth
Costa Mesa
CONNECTICUT
Bloomfield
Garden Grove
Newark . . . . . . . . . . . . . . . . . . . . (7148934909
Irvine
Newark . . . . . . . . . . . . . . . . . . . . (203)2431731
FAI . . . . . . . . . . . . . . . . . . . . . . . . (203)2501319
Southbury
(714)5870404
(714)7534778
(714)4531515
(714)7539953
(714)8639953
Los Angeles
FAI . . . . . . . . . . . . . . . . . . . . . . . . (818)8791234
Manhattan Beach
PENSTOCK . . . . . . . . . . . . . . . . (310)5468953
Mountain View
Newberry Park
PENSTOCK . . . . . . . . . . . . . . . . (805)3756680
Palo Alto
Newark . . . . . . . . . . . . . . . . . . . . (415)8126300
Riverside
Newark . . . . . . . . . . . . . . . . . . . . . (909)7841101
Rocklin
Sacramento
FAI . . . . . . . . . . . . . . . . . . . . . . . . (916)7827882
Newark . . . . . . . . . . . . . . . . . . . . (916)5651760
San Diego
Arrow/Schweber Electronics . . (619)5654800
FAI . . . . . . . . . . . . . . . . . . . . . . . . (619)6232888
Newark . . . . . . . . . . . . . . . . . . . . . (619)4538211
PENSTOCK . . . . . . . . . . . . . . . . (619)6239100
San Jose

72
Duluth
Norcross
Future Electronics . . . . . . . . . . .
Newark . . . . . . . . . . . . . . . . . . . .
PENSTOCK . . . . . . . . . . . . . . . .
Wyle Electronics . . . . . . . . . . . .
(770)4417676
(770)4481300
(770)7349990
(770)4419045
IDAHO
Boise
FAI . . . . . . . . . . . . . . . . . . . . . . . . (208)3768080
ILLINOIS
Addison
Wyle Laboratories . . . . . . . . . . . (708)6200969
Chicago
FAI . . . . . . . . . . . . . . . . . . . . . . . . (708)8430034
Newark Electronics Corp. . . . . (312)7845100
Hoffman Estates
Itasca
Arrow/Schweber Electronics . . (708)2500500
LaFox
Palatine
PENSTOCK . . . . . . . . . . . . . . . . (708)9343700
Schaumburg
Cheshire
Culver City
FAI . . . . . . . . . . . . . . . . . . . . . . . . (404)4474767
Bensenville
Denver

Time Electronics Corporate . . 1800789TIME
Arrow/Schweber Electronics . .
FAI . . . . . . . . . . . . . . . . . . . . . . . .
Wyle Laboratories Corporate . . .
GEORGIA
Atlanta
Wallingfort
FLORIDA
Altamonte Springs
Newark . . . . . . . . . . . . . . . . . . . . (708)3108980
INDIANA
Indianapolis
FAI . . . . . . . . . . . . . . . . . . . . . . . . (317)4690441
Newark . . . . . . . . . . . . . . . . . . . . (317)2590085
Ft. Wayne
Clearwater
FAI . . . . . . . . . . . . . . . . . . . . . . . . (813)5301665
Deerfield Beach
Ft. Lauderdale
FAI . . . . . . . . . . . . . . . . . . . . . . . . (305)4289494
Newark . . . . . . . . . . . . . . . . . . . . . (305)4861151
Lake Mary
Largo/Tampa/St. Petersburg
Newark . . . . . . . . . . . . . . . . . . . . (813)2871578
Orlando
FAI . . . . . . . . . . . . . . . . . . . . . . . . (407)8659555
Tallahassee
FAI . . . . . . . . . . . . . . . . . . . . . . . . (904)6687772
Tampa
PENSTOCK . . . . . . . . . . . . . . . . (813)2477556
Winter Park
PENSTOCK . . . . . . . . . . . . . . . . . (407)6721114
Newark . . . . . . . . . . . . . . . . . . . . (219)4840766
PENSTOCK . . . . . . . . . . . . . . . . (219)4321277
IOWA
Cedar Rapids
Newark . . . . . . . . . . . . . . . . . . . . (319)3933800
KANSAS
Kansas City
FAI . . . . . . . . . . . . . . . . . . . . . . . . (913)3816800
Lenexa
Olathe
PENSTOCK . . . . . . . . . . . . . . . . (913)8299330
Overland Park
Newark . . . . . . . . . . . . . . . . . . . . (913)6770727
MARYLAND
Baltimore
FAI . . . . . . . . . . . . . . . . . . . . . . . . (410)3120833
Columbia
PENSTOCK . . . . . . . . . . . . . . . . (410)2903746
Hanover
Newark . . . . . . . . . . . . . . . . . . . . (410)7126922
5/1/96
AUTHORIZED DISTRIBUTORS continued

UNITED STATES continued
MASSACHUSETTS
Boston
FAI . . . . . . . . . . . . . . . . . . . . . . . . . (508)7793111
Bolton
Future Corporate . . . . . . . . . . . . (508)7793000
Burlington
PENSTOCK . . . . . . . . . . . . . . . . (617)2299100
Norwell
Peabody
Woburn
Newark . . . . . . . . . . . . . . . . . . . . (617)9358350
MICHIGAN
Detroit
FAI . . . . . . . . . . . . . . . . . . . . . . . . (313)5130015
Grand Rapids
Newark . . . . . . . . . . . . . . . . . . . . (616)9546700
Livonia
Troy
Newark . . . . . . . . . . . . . . . . . . . . (810)5832899
MINNESOTA
Bloomington
Wyle Electronics . . . . . . . . . . . . . . (612)8532280
Burnsville
PENSTOCK . . . . . . . . . . . . . . . . . (612)8827630
Eden Prairie
FAI . . . . . . . . . . . . . . . . . . . . . . . . (612)9470909
Minneapolis
Newark . . . . . . . . . . . . . . . . . . . . (612)3316350
Earth City
MISSOURI
St. Louis
FAI . . . . . . . . . . . . . . . . . . . . . . . . (314)5429922
Newark . . . . . . . . . . . . . . . . . . . . (314)4539400
NEW JERSEY
Bridgewater
PENSTOCK . . . . . . . . . . . . . . . . (908)5759490
Cherry Hill
Hamilton/Hallmark . . . . . . . . . . . . (609)4240110
East Brunswick
Newark . . . . . . . . . . . . . . . . . . . . (908)9376600
Fairfield
FAI . . . . . . . . . . . . . . . . . . . . . . . . . (201)3311133
Long Island
FAI . . . . . . . . . . . . . . . . . . . . . . . . (516)3483700
Marlton
FAI . . . . . . . . . . . . . . . . . . . . . . . . (609)9881500
Pinebrook
Parsippany
Wayne
NEW MEXICO
Albuquerque
Alliance Electronics . . . . . . . . . (505)2923360
Newark . . . . . . . . . . . . . . . . . . . . (505)8281878
NEW YORK
Bohemia
Newark . . . . . . . . . . . . . . . . . . . . (516)5674200
Hauppauge
Arrow/Schweber Electronics . . .
Hamilton/Hallmark . . . . . . . . . .
PENSTOCK . . . . . . . . . . . . . . . .
(516)2311000
(516)2344000
(516)4347400
(516)7249580
Konkoma
Melville
Wyle Laboratories . . . . . . . . . . . (516)2938446
Pittsford
Newark . . . . . . . . . . . . . . . . . . . . (716)3814244
Rochester
FAI . . . . . . . . . . . . . . . . . . . . . . . . (716)3879600
Richardson Electronics . . . . . . . (716)2641100
Rockville Centre
Syracuse
FAI . . . . . . . . . . . . . . . . . . . . . . . . (315)4514405
Newark . . . . . . . . . . . . . . . . . . . . (315)4574873
NORTH CAROLINA
Charlotte
FAI . . . . . . . . . . . . . . . . . . . . . . . . (704)5489503
Raleigh
FAI . . . . . . . . . . . . . . . . . . . . . . . . (919)8760088
Newark . . . . . . . . . . . . . . . . . . . . (919)7817677
OHIO
Centerville
Cleveland
FAI . . . . . . . . . . . . . . . . . . . . . . . . (216)4460061
Newark . . . . . . . . . . . . . . . . . . . . (216)3919330
Columbus
Newark . . . . . . . . . . . . . . . . . . . . (614)3260352
Dayton
FAI . . . . . . . . . . . . . . . . . . . . . . . . (513)4276090
Newark . . . . . . . . . . . . . . . . . . . . (513)2948980
Mayfield Heights
Solon
Worthington
OKLAHOMA
Tulsa
FAI . . . . . . . . . . . . . . . . . . . . . . . . (918)4921500
Newark . . . . . . . . . . . . . . . . . . . . (918)2525070
OREGON
Beaverton
Arrow/Almac Electronics Corp. . (503)6298090
Portland
FAI . . . . . . . . . . . . . . . . . . . . . . . . (503)2975020
Newark . . . . . . . . . . . . . . . . . . . . (503)2971984
PENSTOCK . . . . . . . . . . . . . . . . (503)6461670
PENNSYLVANIA
Coatesville
PENSTOCK . . . . . . . . . . . . . . . . (610)3839536
Ft. Washington
Newark . . . . . . . . . . . . . . . . . . . . (215)6541434
Mt. Laurel
Montgomeryville
Philadelphia
Pittsburgh
Newark . . . . . . . . . . . . . . . . . . . . (412)7884790
TENNESSEE
Franklin
Knoxville
Newark . . . . . . . . . . . . . . . . . . . . (615)5886493
TEXAS
Austin
FAI . . . . . . . . . . . . . . . . . . . . . . . . (512)3466426
Newark . . . . . . . . . . . . . . . . . . . . (512)3380287
PENSTOCK . . . . . . . . . . . . . . . . (512)3469762
Benbrook
PENSTOCK . . . . . . . . . . . . . . . . (817)2490442
Carollton
Dallas
FAI . . . . . . . . . . . . . . . . . . . . . . . . (214)2317195
Newark . . . . . . . . . . . . . . . . . . . . (214)4582528
El Paso
FAI . . . . . . . . . . . . . . . . . . . . . . . . (915)5779531
Ft. Worth
Allied Electronics . . . . . . . . . . . . (817)3365401
Houston
FAI . . . . . . . . . . . . . . . . . . . . . . . . (713)9527088
Newark . . . . . . . . . . . . . . . . . . . . (713)8949334
Richardson
PENSTOCK . . . . . . . . . . . . . . . . (214)4799215
San Antonio
FAI . . . . . . . . . . . . . . . . . . . . . . . . (210)7383330
UTAH
Salt Lake City
Arrow/Schweber Electronics . . .
FAI . . . . . . . . . . . . . . . . . . . . . . . .
Hamilton/Hallmark . . . . . . . . . . .
Newark . . . . . . . . . . . . . . . . . . . .
(801)9736913
(801)4679696
(801)4674448
(801)2662022
(801)2615660
(801)9749953
West Valley City


73
5/1/96
AUTHORIZED DISTRIBUTORS continued

UNITED STATES continued
CANADA
ALBERTA
Calgary
WASHINGTON
Bellevue
Almac Electronics Corp. . . . . .
Newark . . . . . . . . . . . . . . . . . . . .
PENSTOCK . . . . . . . . . . . . . . . .
Richardson Electronics . . . . . .
(206)6439992
(206)6419800
(206)4542371
(206)6467224
Mississauga
PENSTOCK . . . . . . . . . . . . . . . . (905)4030724
Ottawa
Electro Sonic Inc. . . . . . . . . . . (403)2559550

FAI . . . . . . . . . . . . . . . . . . . . . . . . (403)2915333
Arrow Electronics . . . . . . . . . . .
Electro Sonic Inc. . . . . . . . . . . .
FAI . . . . . . . . . . . . . . . . . . . . . . . .
BRITISH COLUMBIA
Edmonton
Bothell
Redmond
Toronto
FAI . . . . . . . . . . . . . . . . . . . . . . . . (403)4385888
Arrow Electronics . . . . . . . . . . .
Electro Sonic Inc. . . . . . . . . . . .
FAI . . . . . . . . . . . . . . . . . . . . . . . .
Newark . . . . . . . . . . . . . . . . . . . .
Richardson Electronics . . . . . .
Saskatchewan
Vancouver
Seattle
FAI . . . . . . . . . . . . . . . . . . . . . . . . (206)4856616
Wyle Electronics . . . . . . . . . . . . . . (206)8811150
WISCONSIN
Brookfield
Milwaukee
FAI . . . . . . . . . . . . . . . . . . . . . . . . (414)7929778
New Berlin
Wauwatosa
Newark . . . . . . . . . . . . . . . . . . . . (414)4539100
Arrow Electronics . . . . . . . . . . . (604)4212333

Electro Sonic Inc. . . . . . . . . . . . . (604)2732911
FAI . . . . . . . . . . . . . . . . . . . . . . . . (604)6541050
(905)6707769
(416)4941666
(905)6129888
(905)6129200
(905)5646060
(905)6702888
(905)7956300
QUEBEC
Montreal
MANITOBA
Winnipeg
Electro Sonic Inc. . . . . . . . . . .
FAI . . . . . . . . . . . . . . . . . . . . . . . .
(613)2266903
(613)7288333
(613)8208244
(613)8208313
(613)2261700
(204)7833105
(204)7863075
(204)9441446
(800)6635500
ONTARIO
Kanata
PENSTOCK . . . . . . . . . . . . . . . . (613)5926088
Arrow Electronics . . . . . . . . . . . . (514)4217411

FAI . . . . . . . . . . . . . . . . . . . . . . . . (514)6948157
Quebec City
Arrow Electronics . . . . . . . . . . . (418)6874231
FAI . . . . . . . . . . . . . . . . . . . . . . . . (418)6825775
INTERNATIONAL DISTRIBUTORS
AUSTRALIA
AVNET VSI Electronics (Australia) . . . . . . . (61)2
8781299
Veltek Australia Pty Ltd . . . . . (61)3 95749300
AUSTRIA
EBV Austria . . . . . . . . . . . . . . . . (43) 1 8941774
Elbatex GmbH . . . . . . . . . . . . . . . . (43) 1 866420
Spoerle Austria . . . . . . . . . . . . (43) 1 31872700
BELGIUM
Diode Spoerle . . . . . . . . . . . . . . (32) 2 725 4660
EBV Belgium . . . . . . . . . . . . . . . (32) 2 716 0010
CHINA
Advanced Electronics Ltd. . . . (852)2 3053633
AVNET WKK Components Ltd. (852)2 3578888
China El. App. Corp. Xiamen Co
. . . . . . . . . . . . . . . . . . . . . . . . (86)592 5132489
Nanco Electronics Supply Ltd. . . . . . . . . (852) 2
3335121
Qing Cheng Enterprises Ltd. (852) 2 4934202
DENMARK
Arrow Exatec . . . . . . . . . . . . . . (45) 44 927000
Avnet Nortec A/S . . . . . . . . . . . (45) 44 880800
EBV Denmark . . . . . . . . . . . . . . . (45) 39690511
ESTONIA
Arrow Field Eesti . . . . . . . . . . . . . (372) 6503288
Avnet Baltronic . . . . . . . . . . . . . . (372) 6397000
FINLAND
Arrow Field OY . . . . . . . . . . . . . (35) 807 775 71
Avnet Nortec OY . . . . . . . . . . . . (35) 806 13181
FRANCE
Arrow Electronique . . . . . . . . (33) 1 49 78 49 78
Avnet Components . . . . . . . . (33) 1 49 65 25 00
EBV France . . . . . . . . . . . . . . (33) 1 64 68 86 00
Future Electronics . . . . . . . . . . . (33)1 69821111
Newark . . . . . . . . . . . . . . . . . . . (33)130954060
SEI/Scaib . . . . . . . . . . . . . . . . (33) 1 69 19 89 00

74
GERMANY
NORWAY
Avnet E2000 . . . . . . . . . . . . . . (49) 89 4511001

EBV Elektronik GmbH . . . . . . (49) 89 991140
Future Electronics GmbH . . . (49) 89957 270
Jermyn GmbH . . . . . . . . . . . . . . (49) 64315080
Newark . . . . . . . . . . . . . . . . . . . (49)215470011
Sasco Semiconductor . . . . . . . . (49) 8946110
Spoerle Electronic . . . . . . . . . . (49) 61033040
HOLLAND
EBV Holland . . . . . . . . . . . . . . (31) 3465 623 53
Diode Spoerle BV . . . . . . . . . . . (31) 4054 5430
HONG KONG
AVNET WKK Components Ltd. (852)2 3578888
Nanshing Clr. & Chem. Co. Ltd (852)2 3335121
INDIA
Canyon Products Ltd . . . . . . (91) 80 5587758
Arrow Tahonic A/S . . . . . . . . . . . (47)2237 8440

Avnet Nortec A/S Norway . . . . (47) 66 846210
PHILIPPINES
Alexan Commercial . . . . . . . . . (63) 22419493
SINGAPORE
Future Electronics . . . . . . . . . . . . (65) 4791300
Strong Pte. Ltd . . . . . . . . . . . . . . (65) 2763996
Uraco Technologies Pte Ltd. . . . (65) 5457811
SPAIN
Amitron Arrow . . . . . . . . . . . . . (34) 1 304 30 40
EBV Spain . . . . . . . . . . . . . . . . (34) 1 804 32 56
Selco S.A. . . . . . . . . . . . . . . . . (34) 1 637 10 11
SWEDEN
ArrowTh:s . . . . . . . . . . . . . . . . . . (46) 8 362970
Avnet Nortec AB . . . . . . . . . . . (46) 8 629 14 00
SWITZERLAND
INDONESIA
P.T. Ometraco . . . . . . . . . . . . (62) 21 6196166
ITALY
Avnet Adelsy SpA . . . . . . . . . . . . . (39) 2 381901
EBV Italy . . . . . . . . . . . . . . . . . . . . (39) 2 660961
Silverstar SpA . . . . . . . . . . . . . . (39) 2 66 12 51
JAPAN
AMSC Co., Ltd. . . . . . . . . . . . 81422546800
Fuji Electronics Co., Ltd. . . . . 81338141411
Marubun Corporation . . . . . . 81336398951
Nippon Motorola Micro Elec. . 81332807300
OMRON Corporation . . . . . . 81337799053
Tokyo Electron Ltd. . . . . . . . . 81355617254
EBV Switzerland . . . . . . . . . . . . (41) 1 7456161

Elbatex AG . . . . . . . . . . . . . . . . . (41) 56 4375111
Spoerle . . . . . . . . . . . . . . . . . . . . (41) 1 8746262
S. AFRICA
Advanced . . . . . . . . . . . . . . . . . (27) 11 4442333
Reuthec Components . . . . . . (27) 11 8233357
THAILAND
Shapiphat Ltd. . . (66)22210432 or 22215384
TAIWAN
AvnetMercuries Co., Ltd . . . (886)2 5167303
Solomon Technology Corp. . . . (886)2 7888989
Strong Electronics Co. Ltd. . . (886)2 9179917
UNITED KINGDOM
KOREA
Jung Kwang Sa . . . . . . . . . . . . . (82)22785333
LiteOn Korea Ltd. . . . . . . . . . . (82)28583853
Nasco Co. Ltd. . . . . . . . . . . . . . (82)237726800
NEW ZEALAND
AVNET VSI (NZ) Ltd . . . . . . . . . (64)9 6367801
Arrow Electronics (UK) Ltd . (44) 1 234 270027

Avnet/Access . . . . . . . . . . . . . (44) 1 462 488500
Future Electronics Ltd. . . . . . (44) 1 753 763000
Macro Marketing Ltd. . . . . . . . (44) 1 628 60600
Newark . . . . . . . . . . . . . . . . . . (44) 1 420 543333
5/1/96
MOTOROLA WORLDWIDE SALES OFFICES

Colmar . . . . . . . . . . . . . . . . . . . . . (215)9971020
Philadelphia/Horsham . . . . . . . (215)9574100
UNITED STATES
ALABAMA
Huntsville . . . . . . . . . . . . . . . . . . (205)4646800
ALASKA . . . . . . . . . . . . . . . . . . . (800)6358291
ARIZONA
Tempe . . . . . . . . . . . . . . . . . . . . . (602)3028056
CALIFORNIA
Calabasas . . . . . . . . . . . . . . . . . .
Irvine . . . . . . . . . . . . . . . . . . . . . .
Los Angeles . . . . . . . . . . . . . . . .
San Diego . . . . . . . . . . . . . . . . . .
Sunnyvale . . . . . . . . . . . . . . . . . .
(818)8786800
(714)7537360
(818)8786800
(619)5412163
(408)7490510
COLORADO
Denver . . . . . . . . . . . . . . . . . . . . (303)3373434
CONNECTICUT
Wallingford . . . . . . . . . . . . . . . . . (203)9494100
FLORIDA
Clearwater . . . . . . . . . . . . . . . . . (813)5244177
Maitland . . . . . . . . . . . . . . . . . . . (407)6282636
Pompano Beach/Ft. Lauderdale (305)3516040
GEORGIA
Atlanta . . . . . . . . . . . . . . . . . . . . (770)7297100
IDAHO
Boise . . . . . . . . . . . . . . . . . . . . . . (208)3239413
ILLINOIS
Chicago/Schaumburg . . . . . . . . (847)4132500
INDIANA
Indianapolis . . . . . . . . . . . . . . . . (317)5710400
Kokomo . . . . . . . . . . . . . . . . . . . (317)4555100
TENNESSEE
Knoxville . . . . . . . . . . . . . . . . . . . (423)5844841
TEXAS
Austin . . . . . . . . . . . . . . . . . . . . . (512)5022100
Houston . . . . . . . . . . . . . . . . . . . (713)2510006
Plano . . . . . . . . . . . . . . . . . . . . . . (214)5165100
VIRGINIA
Richmond . . . . . . . . . . . . . . . . . . (804)2852100
UTAH
CSI Inc. . . . . . . . . . . . . . . . . . . . . (801)5724010
WASHINGTON
Bellevue . . . . . . . . . . . . . . . . . . . (206)4544160
Seattle Access . . . . . . . . . . . . . (206)6229960
WISCONSIN
Milwaukee/Brookfield . . . . . . . . (414)7920122
Field Applications Engineering Available
Through All Sales Offices
CANADA
BRITISH COLUMBIA
Vancouver . . . . . . . . . . . . . . . . . . (604)2937650
ONTARIO
Ottawa . . . . . . . . . . . . . . . . . . . . (613)2263491
Toronto . . . . . . . . . . . . . . . . . . . . (416)4978181
QUEBEC
Montreal . . . . . . . . . . . . . . . . . . . (514)3333300
IOWA
Cedar Rapids . . . . . . . . . . . . . . . (319)3780383
KANSAS
Kansas City/Mission . . . . . . . . . (913)4518555
MARYLAND
Columbia . . . . . . . . . . . . . . . . . . (410)3811570
MASSACHUSETTS
Marlborough . . . . . . . . . . . . . . . . (508)3578200
Woburn . . . . . . . . . . . . . . . . . . . . (617)9329700
MICHIGAN
Detroit . . . . . . . . . . . . . . . . . . . . . (810)3476800
Literature . . . . . . . . . . . . . . . . . . (800)3922016
MINNESOTA
Minnetonka . . . . . . . . . . . . . . . . . (612)9321500
MISSOURI
St. Louis . . . . . . . . . . . . . . . . . . . (314)2757380
NEW JERSEY
Fairfield . . . . . . . . . . . . . . . . . . . . (201)8082400
NEW YORK
Fairport . . . . . . . . . . . . . . . . . . . . (716)4254000
Fishkill . . . . . . . . . . . . . . . . . . . . . . (914)8960511
Hauppauge . . . . . . . . . . . . . . . . (516)3617000
NORTH CAROLINA
Raleigh . . . . . . . . . . . . . . . . . . . . (919)8704355
OHIO
Cleveland . . . . . . . . . . . . . . . . . . (216)3493100
Columbus/Worthington . . . . . . . (614)4318492
Dayton . . . . . . . . . . . . . . . . . . . . (513)4386800
OKLAHOMA
Tulsa . . . . . . . . . . . . . . . . . . . . . . (918)4594565
OREGON
Portland . . . . . . . . . . . . . . . . . . . (503)6413681
PENNSYLVANIA
INTERNATIONAL
AUSTRALIA
Melbourne . . . . . . . . . . . . . . . . (613)98870711
Sydney . . . . . . . . . . . . . . . . . . . (612)29661071
BRAZIL
Sao Paulo . . . . . . . . . . . . . . . . 55(11)8154200
CHINA
Beijing . . . . . . . . . . . . . . . . . . . . . 86108437222
Guangzhou . . . . . . . . . . . . . . . . 86207537888
Shanghai . . . . . . . . . . . . . . . . . . 86213747668
Tianjin . . . . . . . . . . . . . . . . . . . . . 86225325072
DENMARK
Denmark . . . . . . . . . . . . . . . . . . . . (45) 43488393
FINLAND
Helsinki . . . . . . . . . . . . . . . . . . 3580351 61191
car phone . . . . . . . . . . . . . . . . . . . 358(49)211501
FRANCE
Paris . . . . . . . . . . . . . . . . . . . . . . . 33134 635900
GERMANY
Langenhagen/Hanover . . . . . . . 49(511)786880
Munich . . . . . . . . . . . . . . . . . . . . . 49 89 921030
Nuremberg . . . . . . . . . . . . . . . . . 49 911 963190
Sindelfingen . . . . . . . . . . . . . . . . 49 7031 79 710
Wiesbaden . . . . . . . . . . . . . . . . . . 49 611 973050
HONG KONG
Kwai Fong . . . . . . . . . . . . . . . . 85226106888
Tai Po . . . . . . . . . . . . . . . . . . . 85226668333
INDIA
Bangalore . . . . . . . . . . . . . . . . . . 91805598615
ISRAEL
Herzlia . . . . . . . . . . . . . . . . . . . . . 9729590222
ITALY
Milan . . . . . . . . . . . . . . . . . . . . . . . . . . 39(2)82201
JAPAN
Kyusyu . . . . . . . . . . . . . . . . . . 81927257583
Gotanda . . . . . . . . . . . . . . . . . . 81354878311
Nagoya . . . . . . . . . . . . . . . . . . 81522323500
Osaka . . . . . . . . . . . . . . . . . . . . . 8163051801
Sendai . . . . . . . . . . . . . . . . . . 81222684333
Takamatsu . . . . . . . . . . . . . . . 81878379972
Tokyo . . . . . . . . . . . . . . . . . . . . 81334403311
KOREA
Pusan . . . . . . . . . . . . . . . . . . . . 82(51)4635035
Seoul . . . . . . . . . . . . . . . . . . . . . . . 82(2)5545118
MALAYSIA
Penang . . . . . . . . . . . . . . . . . . . . 60(4)2282514
MEXICO
Mexico City . . . . . . . . . . . . . . . . 52(5)2820230
Guadalajara . . . . . . . . . . . . . . . . 52(36)218977
Marketing . . . . . . . . . . . . . . . . . . 52(36)212023
Customer Service . . . . . . . . . . 52(36)6699160
NETHERLANDS
Best . . . . . . . . . . . . . . . . . . . . . . (31)4998 612 11
PHILIPPINES
Manila . . . . . . . . . . . . . . . . . . . . . (63)2 8220625
PUERTO RICO
San Juan . . . . . . . . . . . . . . . . . . . (809)2822300
SINGAPORE . . . . . . . . . . . . . . . . . . (65)4818188
SPAIN
Madrid . . . . . . . . . . . . . . . . . . . . . 34(1)4578204
or . . . . . . . . . . . . . . . . . . . . . . . . . 34(1)4578254
SWEDEN
Solna . . . . . . . . . . . . . . . . . . . . . . 46(8)7348800
SWITZERLAND
Geneva . . . . . . . . . . . . . . . . . . . . 41(22)799 11 11
Zurich . . . . . . . . . . . . . . . . . . . . . 41(1)7304074
TAIWAN
Taipei . . . . . . . . . . . . . . . . . . . . 886(2)7177089
THAILAND
Bangkok . . . . . . . . . . . . . . . . . . . 66(2)2544910
UNITED KINGDOM
Aylesbury . . . . . . . . . . . . . . . . 44 1 (296)395252
FULL LINE REPRESENTATIVES

CALIFORNIA, Loomis
Galena Technology Group . . . . . (916)6520268
NEVADA, Reno
Galena Tech. Group . . . . . . . . . (702)7460642
NEW MEXICO, Albuquerque

S&S Technologies, Inc. . . . . . . . (602)4141100
UTAH, Salt Lake City

Utah Comp. Sales, Inc. . . . . . . (801)5615099
WASHINGTON, Spokane
Doug Kenley . . . . . . . . . . . . . . . (509)9242322
HYBRID/MCM COMPONENT
SUPPLIERS
Chip Supply . . . . . . . . . . . . . . . .
Elmo Semiconductor . . . . . . . .
Minco Technology Labs Inc. . .
Semi Dice Inc. . . . . . . . . . . . . . .
(407)2987100
(818)7687400
(512)8342022
(310)5944631

75

76
1 Alphanumeric Index of Part Numbers
Selector Guide

Data Sheets
Surface Mount Package Information and


Power Mosfet

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Power Mosfet

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TMOS Power MOSFET Transistor Device Data

Alphanumeric Index of Part Numbers 1

Introduction to Power MOSFETs

Surface Mount Package Information and

Package Outline Dimensions and Footprints

Distributors and Sales Offices

Designers, SENSEFET, EFETs, ICePAK, HDTMOS, MiniMOS, SMARTDISCRETES,

are registered trademarks of Motorola, Inc.

TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

Three Ways To Receive

Mfax - TouchTone Fax

Motorola SPS World Marketing Internet Server

How to reach us:

SECTION FOUR Data Sheets

Table of Contents (continued)

SECTION FOUR Data Sheets (continued)

Alphanumeric Index of Part Numbers . . . . . . . . . . . . . . . 12

Motorola TMOS Power MOSFET Transistors Device Data

Alphanumeric Index of Part Numbers

Alphanumeric Index of Part Numbers

Alphanumeric Index of Part Numbers

Motorola TMOS Power MOSFET Transistor Device Data

ALPHANUMERIC INDEX OF PART NUMBERS (continued)

Obsolete Part Numbers Cross Reference

Motorola TMOS Power MOSFET Transistors Device Data

Alphanumeric Index of Part Numbers

Alphanumeric Index of Part Numbers

Motorola TMOS Power MOSFET Transistor Device Data

Motorola TMOS Power MOSFET Transistors Device Data

TMOS Power MOSFETs Numbering System

VOLTAGE RATING DIVIDED BY 10

Example of exceptions: MTD/MTP3055E

SO8 (MiniMOS), Micro8 and SOT223 Power MOSFETs

R2 FOR TAPE & REEL MiniMOS, Micro8

VOLTAGE RATING DIVIDED BY 10

Motorola TMOS Power MOSFET Transistor Device Data

Table 1. SO8 NChannel

Table 2. SO8 PChannel

Micro8 HDTMOS Products

Table 3. N Channel and P Channel

Devices listed in bold, italic are Motorola preferred devices.

Motorola TMOS Power MOSFET Transistors Device Data

EZFET Power MOSFETs with Zener Gate Protection

Table 5. SOT223 NChannel

Table 6. SOT223 PChannel

Table 7. DPAK NChannel

Devices listed in bold, italic are Motorola preferred devices.

Motorola TMOS Power MOSFET Transistor Device Data

Table 7. DPAK NChannel (continued)

Table 8. DPAK PChannel

Table 9. D2PAK NChannel

Devices listed in bold, italic are Motorola preferred devices.

Motorola TMOS Power MOSFET Transistors Device Data

Table 9. D2PAK NChannel (continued)

Table 10. D2PAK PChannel

Table 11. D3PAK NChannel

Devices listed in bold, italic are Motorola preferred devices.

Motorola TMOS Power MOSFET Transistor Device Data

Table 12. TO220AB NChannel

Devices listed in bold, italic are Motorola preferred devices.

Motorola TMOS Power MOSFET Transistors Device Data

Table 13. TO220AB PChannel

TO247 (Isolated Mounting Hole)