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PD - 96350

IRF4104GPbF
Features
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Advanced Process Technology


Ultra Low On-Resistance
175C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free

HEXFET Power MOSFET


D

VDSS = 40V
RDS(on) = 5.5m

Description

ID = 75A

This HEXFET Power MOSFET utilizes the latest


processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.

TO-220AB
IRF4104GPbF

Absolute Maximum Ratings


ID @ TC = 25C
ID @ TC = 100C
ID @ TC = 25C
IDM
PD @TC = 25C

Parameter

Max.

Continuous Drain Current, VGS @ 10V (Silicon Limited)


Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current

120
84
75
470
140

Power Dissipation

VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR

Linear Derating Factor


Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy

TJ
TSTG

Operating Junction and


Storage Temperature Range

Parameter
Junction-to-Case

RCS

Case-to-Sink, Flat Greased Surface

RJA

Junction-to-Ambient

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0.95
20
120
220
See Fig.12a, 12b, 15, 16

W/C
V
mJ
A
mJ
C

RJC

-55 to + 175

Soldering Temperature, for 10 seconds


Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Units

300 (1.6mm from case )


10 lbf in (1.1N m)

Typ.

Max.

1.05

0.50

62

Units
C/W

1
01/18/11

IRF4104GPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

40

V(BR)DSS/TJ

Breakdown Voltage Temp. Coefficient

0.032

RDS(on)

Static Drain-to-Source On-Resistance

4.3

5.5

VGS(th)

Gate Threshold Voltage

2.0

4.0

gfs
IDSS

Forward Transconductance

63

Drain-to-Source Leakage Current

250

Gate-to-Source Forward Leakage

200

Gate-to-Source Reverse Leakage

-200

IGSS

Conditions
VGS = 0V, ID = 250A

V/C Reference to 25C, ID = 1mA


m VGS = 10V, ID = 75A

VDS = VGS, ID = 250A

VDS = 10V, ID = 75A

20

VDS = 40V, VGS = 0V


VDS = 40V, VGS = 0V, TJ = 125C

nA

VGS = 20V
VGS = -20V

Qg

Total Gate Charge

68

100

Qgs

Gate-to-Source Charge

21

Qgd

Gate-to-Drain ("Miller") Charge

27

VGS = 10V

td(on)

Turn-On Delay Time

16

VDD = 20V

tr

Rise Time

130

td(off)

Turn-Off Delay Time

38

tf

Fall Time

77

VGS = 10V

LD

Internal Drain Inductance

4.5

Between lead,

LS

Internal Source Inductance

7.5

6mm (0.25in.)
from package

Ciss

Input Capacitance

3000

and center of die contact


VGS = 0V

Coss

Output Capacitance

660

Crss

Reverse Transfer Capacitance

380

Coss

Output Capacitance

2160

VGS = 0V, VDS = 1.0V, = 1.0MHz

Coss

Output Capacitance

560

VGS = 0V, VDS = 32V, = 1.0MHz

Coss eff.

Effective Output Capacitance

850

VGS = 0V, VDS = 0V to 32V

ID = 75A
nC

VDS = 32V

ID = 75A
ns

nH

RG = 6.8

VDS = 25V
pF

= 1.0MHz

Source-Drain Ratings and Characteristics


Parameter

Min. Typ. Max. Units

IS

Continuous Source Current

75

ISM

(Body Diode)
Pulsed Source Current

470

VSD

(Body Diode)
Diode Forward Voltage

1.3

trr

Reverse Recovery Time

23

35

ns

Qrr

Reverse Recovery Charge

6.8

10

nC

ton

Forward Turn-On Time

Conditions
MOSFET symbol

showing the
integral reverse
p-n junction diode.
TJ = 25C, IS = 75A, VGS = 0V
TJ = 25C, IF = 75A, VDD = 20V
di/dt = 100A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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IRF4104GPbF
1000

1000

VGS

15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

100

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

10

4.5V
1

15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

100

20s PULSE WIDTH


Tj = 25C

0.1

4.5V
10

0.1

10

100

0.1

VDS, Drain-to-Source Voltage (V)

20s PULSE WIDTH


Tj = 175C

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

120

Gfs, Forward Transconductance (S)

ID, Drain-to-Source Current ( A)

VGS

T J = 25C
T J = 175C
100

10

VDS = 15V
20s PULSE WIDTH

1
4

10

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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T J = 25C

100
80
60

TJ = 175C

40
20

VDS = 10V
380s PULSE WIDTH

0
12

20

40

60

80

100

ID, Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance


Vs. Drain Current

IRF4104GPbF
5000

VGS, Gate-to-Source Voltage (V)

4000

C, Capacitance (pF)

20

VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd

Ciss

3000

2000

Coss

1000

Crss

ID= 75A
VDS= 32V
VDS= 20V

16

12

0
1

10

100

1000.0

ID, Drain-to-Source Current (A)

10000

100.0
T J = 175C
10.0
T J = 25C
1.0

VGS = 0V

0.1
0.2

0.6

1.0

1.4

VSD, Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode


Forward Voltage

60

80

100

Fig 6. Typical Gate Charge Vs.


Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.


Drain-to-Source Voltage

ISD, Reverse Drain Current (A)

40

QG Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

20

1000

100
100sec
10

1
1.8

OPERATION IN THIS AREA


LIMITED BY R DS(on)

1msec

Tc = 25C
Tj = 175C
Single Pulse
0

10msec
10

100

1000

VDS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

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IRF4104GPbF
120

2.0

RDS(on) , Drain-to-Source On Resistance


(Normalized)

LIMITED BY PACKAGE

ID , Drain Current (A)

100
80
60
40
20
0
25

50

75

100

125

150

ID = 75A
VGS = 10V

1.5

1.0

0.5

175

-60 -40 -20

T C , Case Temperature (C)

20 40 60 80 100 120 140 160 180

T J , Junction Temperature (C)

Fig 10. Normalized On-Resistance


Vs. Temperature

Fig 9. Maximum Drain Current Vs.


Case Temperature

Thermal Response ( Z thJC )

10

D = 0.50
0.20
0.10
0.05

0.1

0.02
0.01

0.01

R1
R1
J
1

R2
R2
2

Ci= i/Ri
Ci i/Ri

SINGLE PULSE
( THERMAL RESPONSE )

R3
R3
3

Ri (C/W) i (sec)
0.371
0.000272
0.337
0.001375
0.337

0.018713

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF4104GPbF

DRIVER

VDS

D.U.T

RG
20V
VGS

+
V
- DD

IAS

0.01

tp

Fig 12a. Unclamped Inductive Test Circuit


V(BR)DSS
tp

EAS, Single Pulse Avalanche Energy (mJ)

500

15V

TOP

400

BOTTOM

ID
11A
16A
75A

300

200

100

0
25

50

75

100

125

150

175

Starting T J, Junction Temperature (C)


I AS

Fig 12c. Maximum Avalanche Energy


Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms


QG
QGS

QGD

4.0

VG

Charge

Fig 13a. Basic Gate Charge Waveform


Current Regulator
Same Type as D.U.T.

50K
12V

.2F
.3F

D.U.T.

+
V
- DS

VGS(th) Gate threshold Voltage (V)

10 V

ID = 250A

3.0

2.0

1.0
-75 -50 -25

VGS

25

50

75

100 125 150 175

T J , Temperature ( C )

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 14. Threshold Voltage Vs. Temperature

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IRF4104GPbF

Avalanche Current (A)

1000

Duty Cycle = Single Pulse

100

Allowed avalanche Current vs


avalanche pulsewidth, tav
assuming Tj = 25C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax

0.01
0.05

10

0.10

0.1
1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

140

TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A

EAR , Avalanche Energy (mJ)

120
100
80
60
40
20
0
25

50

75

100

125

150

Starting T J , Junction Temperature (C)

Fig 16. Maximum Avalanche Energy


Vs. Temperature

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Notes on Repetitive Avalanche Curves , Figures 15, 16:


(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav

IRF4104GPbF

D.U.T

Driver Gate Drive

D.U.T. ISD Waveform


Reverse
Recovery
Current

dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test

P.W.
Period

RG

D=

VGS=10V

Circuit Layout Considerations


Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

Period

P.W.

VDD

Body Diode Forward


Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

ISD

* VGS = 5V for Logic Level Devices


Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs

V DS
VGS
RG

RD

D.U.T.
+

-VDD

10V
Pulse Width 1 s
Duty Factor 0.1 %

Fig 18a. Switching Time Test Circuit


VDS
90%

10%
VGS
td(on)

tr

t d(off)

tf

Fig 18b. Switching Time Waveforms

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IRF4104GPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information


E XAMPLE: T HIS IS AN IRFB4310GPBF

Note: "G" s uffix in part number


indicates "Halogen - Free"
Note: "P" in ass embly line pos ition
indicates "Lead - F ree"

INTERNAT IONAL
RECTIFIER
LOGO
AS S EMBLY
LOT CODE

PART NUMBER

DATE CODE:
Y= LAS T DIGIT OF
CALENDAR YEAR
WW= WORK WEEK
X= F ACT ORY CODE

TO-220AB package is not recommended for Surface Mount Application


Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/datasheets/data/auirf4104.pdf
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25C, L = 0.04mH
RG = 25, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.

Coss eff. is a fixed capacitance that gives the same charging time as Coss
while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100% tested
to this value in production.
This is only applied to TO-220AB pakcage.

Data and specifications subject to change without notice.


This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2011

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