IRF4104GPbF
Features
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VDSS = 40V
RDS(on) = 5.5m
Description
ID = 75A
TO-220AB
IRF4104GPbF
Parameter
Max.
120
84
75
470
140
Power Dissipation
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Parameter
Junction-to-Case
RCS
RJA
Junction-to-Ambient
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0.95
20
120
220
See Fig.12a, 12b, 15, 16
W/C
V
mJ
A
mJ
C
RJC
-55 to + 175
Thermal Resistance
Units
Typ.
Max.
1.05
0.50
62
Units
C/W
1
01/18/11
IRF4104GPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS
40
V(BR)DSS/TJ
0.032
RDS(on)
4.3
5.5
VGS(th)
2.0
4.0
gfs
IDSS
Forward Transconductance
63
250
200
-200
IGSS
Conditions
VGS = 0V, ID = 250A
20
nA
VGS = 20V
VGS = -20V
Qg
68
100
Qgs
Gate-to-Source Charge
21
Qgd
27
VGS = 10V
td(on)
16
VDD = 20V
tr
Rise Time
130
td(off)
38
tf
Fall Time
77
VGS = 10V
LD
4.5
Between lead,
LS
7.5
6mm (0.25in.)
from package
Ciss
Input Capacitance
3000
Coss
Output Capacitance
660
Crss
380
Coss
Output Capacitance
2160
Coss
Output Capacitance
560
Coss eff.
850
ID = 75A
nC
VDS = 32V
ID = 75A
ns
nH
RG = 6.8
VDS = 25V
pF
= 1.0MHz
IS
75
ISM
(Body Diode)
Pulsed Source Current
470
VSD
(Body Diode)
Diode Forward Voltage
1.3
trr
23
35
ns
Qrr
6.8
10
nC
ton
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25C, IS = 75A, VGS = 0V
TJ = 25C, IF = 75A, VDD = 20V
di/dt = 100A/s
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IRF4104GPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
TOP
TOP
10
4.5V
1
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
0.1
4.5V
10
0.1
10
100
0.1
10
100
1000
120
VGS
T J = 25C
T J = 175C
100
10
VDS = 15V
20s PULSE WIDTH
1
4
10
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T J = 25C
100
80
60
TJ = 175C
40
20
VDS = 10V
380s PULSE WIDTH
0
12
20
40
60
80
100
IRF4104GPbF
5000
4000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
3000
2000
Coss
1000
Crss
ID= 75A
VDS= 32V
VDS= 20V
16
12
0
1
10
100
1000.0
10000
100.0
T J = 175C
10.0
T J = 25C
1.0
VGS = 0V
0.1
0.2
0.6
1.0
1.4
60
80
100
40
20
1000
100
100sec
10
1
1.8
1msec
Tc = 25C
Tj = 175C
Single Pulse
0
10msec
10
100
1000
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IRF4104GPbF
120
2.0
LIMITED BY PACKAGE
100
80
60
40
20
0
25
50
75
100
125
150
ID = 75A
VGS = 10V
1.5
1.0
0.5
175
10
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
R1
R1
J
1
R2
R2
2
Ci= i/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
R3
R3
3
Ri (C/W) i (sec)
0.371
0.000272
0.337
0.001375
0.337
0.018713
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
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IRF4104GPbF
DRIVER
VDS
D.U.T
RG
20V
VGS
+
V
- DD
IAS
0.01
tp
500
15V
TOP
400
BOTTOM
ID
11A
16A
75A
300
200
100
0
25
50
75
100
125
150
175
QGD
4.0
VG
Charge
50K
12V
.2F
.3F
D.U.T.
+
V
- DS
10 V
ID = 250A
3.0
2.0
1.0
-75 -50 -25
VGS
25
50
75
T J , Temperature ( C )
3mA
IG
ID
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IRF4104GPbF
1000
100
0.01
0.05
10
0.10
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
140
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
120
100
80
60
40
20
0
25
50
75
100
125
150
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IRF4104GPbF
D.U.T
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
RG
D=
VGS=10V
Period
P.W.
VDD
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
V DS
VGS
RG
RD
D.U.T.
+
-VDD
10V
Pulse Width 1 s
Duty Factor 0.1 %
10%
VGS
td(on)
tr
t d(off)
tf
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IRF4104GPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
INTERNAT IONAL
RECTIFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
DATE CODE:
Y= LAS T DIGIT OF
CALENDAR YEAR
WW= WORK WEEK
X= F ACT ORY CODE
Coss eff. is a fixed capacitance that gives the same charging time as Coss
while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100% tested
to this value in production.
This is only applied to TO-220AB pakcage.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2011
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