Philips Semiconductors Product specification

Rectifier diodes BY229F, BY229X series

fast, soft-recovery
FEATURES SYMBOL QUICK REFERENCE DATA
Low forward volt drop V
R
= 200 V/ 400 V/ 600 V/800 V
Fast switching
Soft recovery characteristic I
F(AV)
= 8 A
High thermal cycling performance
Isolated mounting tab I
FSM
60 A
t
rr
135 ns
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft
recovery characteristic. The devices are intended for use in TVreceivers, monitors and switched mode power supplies.
The BY229F series is supplied in the conventional leaded SOD100 package.
The BY229X series is supplied in the conventional leaded SOD113 package.
PINNING SOD100 SOD113
PIN DESCRIPTION
1 cathode
2 anode
tab isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BY229F- / BY229X- 200 400 600 800
V
RSM
Peak non-repetitive reverse - 200 400 600 800 V
voltage
V
RRM
Peak repetitive reverse voltage - 200 400 600 800 V
V
RWM
Crest working reverse voltage - 150 300 500 600 V
V
R
Continuous reverse voltage - 150 300 500 600 V
I
F(AV)
Average forward current
1
square wave; = 0.5; - 8 A
T
hs
83 C
sinusoidal; a = 1.57; - 7 A
T
hs
90 C
I
F(RMS)
RMS forward current - 11 A
I
FRM
Peak repetitive forward current t = 25 s; = 0.5; - 16 A
T
hs
83 C
I
FSM
Peak non-repetitive forward t = 10 ms - 60 A
current t = 8.3 ms - 66 A
sinusoidal; T
j
= 150 C
prior to surge; with
reapplied V
RWM(max)
I
2
t I
2
t for fusing t = 10 ms - 18 A
2
s
T
stg
Storage temperature -40 150 C
T
j
Operating junction temperature - 150 C
1. Neglecting switching and reverse current losses.
k a
1 2
1 2
case
1 2
case
September 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BY229F, BY229X series
fast, soft-recovery
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Peak isolation voltage from SOD100 package; R.H. 65%; clean and - - 1500 V
both terminals to external dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V
both terminals to external sinusoidal waveform; R.H. 65%; clean
heatsink and dustfree
C
isol
Capacitance from pin 1 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 4.8 K/W
heatsink without heatsink compound - - 7.2 K/W
R
th j-a
Thermal resistance junction to in free air. - 55 - K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage I
F
= 20 A - 1.5 1.85 V
I
R
Reverse current V
R
= V
RWM
; T
j
= 125 C - 0.1 0.4 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
rr
Reverse recovery time I
F
= 1 A; V
R
> 30 V; -dI
F
/dt = 50 A/s - 100 135 ns
Q
s
Reverse recovery charge I
F
= 2 A; V
R
> 30 V; -dI
F
/dt = 20 A/s - 0.5 0.7 C
dI
R
/dt Maximum slope of the reverse I
F
= 2 A; -dI
F
/dt = 20 A/s - 50 60 A/s
recovery current
September 1998 2 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BY229F, BY229X series
fast, soft-recovery
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Maximum forward dissipation, P
F
= f(I
F(AV)
);
square wave current waveform; parameter D = duty
cycle = t
p
/T.
Fig.3. Maximum forward dissipation, P
F
= f(I
F(AV)
);
sinusoidal current waveform; parameter a = form
factor = I
F(RMS)
/I
F(AV)
.
Fig.4. Maximum non-repetitive rms forward current.
I
F
= f(t
p
); sinusoidal current waveform; T
j
= 150C prior
to surge with reapplied V
RWM
.
Fig.5. Typical and maximum forward characteristic;
I
F
= f(V
F
); parameter T
j
Fig.6. Maximum Q
s
at T
j
= 25C and 150C
100%
time
dI
dt
F
I
R
I
F
I
rrm
trr
25%
Qs
1ms 10ms 0.1s 1s 10s
tp / s
IFS(RMS) / A
BY229
80
70
60
50
40
30
20
10
0
IFSM
0 1
BY229F
VF / V
IF / A
30
20
10
0
2 0.5 1.5
max typ
Tj = 150 C
Tj = 25 C
0 2 4 6 8 10 12
BY329
IF(AV) / A
PF / W
20
15
10
5
0
Ths(max) / C
150
54
78
102
126
0.5
0.2
0.1
D = 1.0
D =
tp
tp
T
T
I
t
Vo = 1.25 V
Rs = 0.03 Ohms
1 100
BY329
-dIF/dt (A/us)
Qs / uC
10
1
0.1
10
2 A
IF = 10 A
10 A
1 A
1 A
2 A
Tj = 150 C
Tj = 25 C
0 2 4 6 8
BY329
IF(AV) / A
PF / W
15
10
5
0
4
2.8
2.2
1.9
a = 1.57
Ths(max) / C
150
78
102
126
Vo = 1.25 V
Rs = 0.03 Ohms
September 1998 3 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BY229F, BY229X series
fast, soft-recovery
Fig.7. Maximum t
rr
measured to 25% of I
rrm
; T
j
= 25C
and 150C
Fig.8. Typical junction capacitance C
d
at f = 1 MHz
;
T
j
= 25C
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
1 10 100
BY329
-dIF/dt (A/us)
trr / ns
1000
100
10
1 A
IF = 10 A
Tj = 150 C
Tj = 25 C
10A
1A
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BY229F pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
tp
tp
T
T
P
t
D
1 100
100
10
1
10 1000
BY329 Cd / pF
VR / V
September 1998 4 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BY229F, BY229X series
fast, soft-recovery
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
5.08
0.9
0.7
M 0.4
top view
3.5 max
not tinned
4.4
k a
September 1998 5 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BY229F, BY229X series
fast, soft-recovery
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.11. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1 2
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M 0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
September 1998 6 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BY229F, BY229X series
fast, soft-recovery
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998 7 Rev 1.200