TLC 27 L 2

TLC27L2, TLC27L2A, TLC27L2B, TLC27L7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS

SLOS052D OCTOBER 1987 REVISED OCTOBER 2005
D Trimmed Offset Voltage:
D, JG, OR P PACKAGE
(TOP VIEW)
TLC27L7 . . . 500 V Max at 25C,

VDD = 5 V
Input Offset Voltage Drift . . . Typically
0.1 V/Month, Including the First 30 Days
Wide Range of Supply Voltages Over
Specified Temperature Range:
0C to 70C . . . 3 V to 16 V
40C to 85C . . . 4 V to 16 V
55C to 125C . . . 4 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix,
I-Suffix Types)
Ultra-Low Power . . . Typically 95 W
at 25C, VDD = 5 V
Output Voltage Range Includes Negative
Rail
High Input Impedance . . . 1012 Typ
ESD-Protection Circuitry
Small-Outline Package Option Also
Available in Tape and Reel
Designed-In Latch-Up immunity
D
D
D
D
D
D
D
D
VDD
2OUT
2IN
2IN +
FK PACKAGE
(TOP VIEW)
NC
1IN
NC
1IN +
NC
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
NC
2OUT
NC
2IN
NC
NC No internal connection
DISTRIBUTION OF TLC27L7
INPUT OFFSET VOLTAGE
description
30
The TLC27L2 and TLC27L7 dual operational

amplifiers combine a wide range of input offset
voltage grades with low offset voltage drift, high
input impedance, extremely low power, and high
gain.
PACKAGE
VIOmax
AT 25C
SMALL
OUTLINE
(D)
0C
to
70C
500 V
2 mV
5 mV
10 mV
TLC27L7CD
TLC27L2BCD
TLC27L2ACD
TLC27L2CD
40C
to
85C
500 V
2 mV
5 mV
10 mV
TLC27L7ID
TLC27L2BID
TLC27L2AID
TLC27L2ID
55C
to
125C
500 V
10 mV
TLC27L7MD
TLC27L2MD
TLC27L2MDRG4
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
TLC27L7CP
TLC27L2BCP
TLC27L2ACP
TLC27L2CP
TLC27L7IP
TLC27L2BIP
TLC27L2AIP
TLC27L2IP
TLC27L7MFK
TLC27L2MFK
TLC27L7MJG
TLC27L2MJG
TLC27L7MP
TLC27L2MP
Percentage of Units %
25
AVAILABLE OPTIONS
TA
NC
1OUT
NC
VDD
NC
1OUT
1IN
1IN +
GND
NC
GND
NC
2IN +
NC
335 Units Tested From 2 Wafer Lots

VDD = 5 V
TA = 25C
P Package
20
15
10
5
0
800
400
0
400
800
VIO Input Offset Voltage V
The D package is available taped and reeled. Add R suffix to the device type
(e.g., TLC27L7CDR).
LinCMOS is a trademark of Texas Instruments.

Copyright 2005, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
DALLAS, TEXAS 75265

description (continued)
These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset voltage
stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and low power consumption make these cost-effective
devices ideal for high gain, low frequency, low power applications. Four offset voltage grades are available
(C-suffix and I-suffix types), ranging from the low-cost TLC27L2 (10 mV) to the high-precision TLC27L7
(500 V). These advantages, in combination with good common-mode rejection and supply voltage rejection,
make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers,
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27L2 and
TLC27L7. The devices also exhibit low voltage single-supply operation and ultra-low power consumption,
making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input
voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up.
The TLC27L2 and TLC27L7 incorporate internal ESD-protection circuits that prevent functional failures at
voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in
handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-Suffix devices are characterized for operation from 0C to 70C. The I-suffix devices are characterized
for operation from 40C to 85C. The M-suffix devices are characterized for operation over the full military
temperature range of 55C to 125C.
equivalent schematic (each amplifier)

VDD
P3
P4
R6
R1
N5
R2
IN
P5
P1
P6
P2
IN +
R5
C1
OUT
N3
N1
R3
N2
D1
N4
R4
D2
GND
DALLAS, TEXAS 75265
N6
R7
N7

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
Differential input voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDD
Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to VDD
Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 mA
Output current, IO (each output) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Total current into VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 mA
Total current out of GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 mA
Duration of short-circuit current at (or below) 25C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature, TA: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0C to 70C
I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C to 85C
M suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55C to 125C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65C to 150C
Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package . . . . . . . . . . . . . . . . . 260C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package . . . . . . . . . . . . . . . . . . . . 300C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN .
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGE
TA 25C
25 C
POWER RATING
DERATING FACTOR
ABOVE TA = 25C
TA = 70
70C
C
POWER RATING
TA = 85
85C
C
POWER RATING
TA = 125
125C
C
POWER RATING
5.8 mW/C
464 mW
377 mW
725 mW
FK
1375 mW
11 mW/C
880 mW
715 mW
275 mW
JG
1050 mW
8.4 mW/C
672 mW
546 mW
210 mW
1000 mW
8 mW/C
640 mW
520 mW
recommended operating conditions
Supply voltage, VDD

Common-mode input voltage, VIC
VDD = 5 V
VDD = 10 V
Operating free-air temperature, TA
C SUFFIX
I SUFFIX
M SUFFIX
MIN
MAX
MIN
MAX
MIN
MAX
16
16
16
0.2
3.5
0.2
3.5
3.5
0.2
8.5
0.2
8.5
8.5
70
40
85
55
125
DALLAS, TEXAS 75265
UNIT
V
V
C

electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
TLC27L2C
TLC27L2AC
TLC27L2BC
TLC27L7C
MIN
TLC27L2C
VIO
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
VIC = 0,
RL = 1 M
Full range
TLC27L2BC
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
Full range
TLC27L7C
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
VIO
IIO
Input offset current (see Note 4)
VO = 2.5 V,
VIC = 2.5 V
IIB
Input bias current (see Note 4)
VO = 2.5 V,
VIC = 2.5 V
VOH
VOL
AVD
CMRR
kSVR
IDD
Low-level output voltage
Large-signal differential voltage

amplification
Common-mode rejection ratio
VID = 100 mV,
RL = 1 M
VID = 100 mV,
VO = 0.25 V to 2 V,
IOL = 0
RL = 1 M
VIC = VICRmin
Supply-voltage rejection ratio

(VDD /VIO)
VDD = 5 V to 10 V,
Supply current (two amplifiers)
VO = 2.5 V,
No load
VO = 1.4 V
VIC = 2.5 V,
10
0.9
204
DALLAS, TEXAS 75265
mV
2000
3000
25C
170
Full range
500
V
V
1500
25 C to
25C
70C
1.1
25C
0.1
60
70C
300
25C
0.6
60
70C
50
600
25C
25
C
0.2
to
4
Full range
0.2
to
3.5
25C
3.2
4.1
0C
4.1
70C
4.2
V/C
V/C
0.3
to
4.2
pA
pA
25C
50
0C
50
70C
50
25C
50
700
0C
50
700
70C
50
380
25C
65
94
0C
60
95
70C
60
95
25C
70
97
0C
60
97
70C
60
98
mV
V/mV
dB
dB
25C
20
34
0C
24
42
70C
16
28
Full range is 0C to 70C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
5
6.5
25C
Common-mode input voltage range

(see Note 5)
High-level output voltage
MAX
1.1
12
25C
VO = 1.4 V,
RS = 50 ,
Input offset voltage
TYP
Full range
TLC27L2AC
Average temperature coefficient of input

offset voltage
VICR
25C
UNIT

PARAMETER
TEST CONDITIONS
TA
TLC27L2C
TLC27L2AC
TLC27L2BC
TLC27L7C
MIN
VO = 1.4 V,
RS = 50 ,
TLC27L2C
VIO
VIC = 0,
RL = 1 M
25C
MAX
1.1
10
12
25C
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
Full range
TLC27L2BC
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
Full range
TLC27L7C
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
Full range
TYP
Full range
TLC27L2AC
UNIT
0.9
5
6.5
25C
235
2000
3000
25C
190
800

offset voltage
25C
0.1
60
IIO
VO = 5 V,
VIC = 5 V
70C
300
25C
0.7
60
IIB
VO = 5 V,
VIC = 5 V
70C
50
600
VICR
VOH
VOL
AVD
CMRR
kSVR
IDD
25C to
70C

amplification
VID = 100 mV,
RL = 1 M
VID = 100 mV,
IOL = 0
VO = 1 V to 6 V,
RL = 1 M
VIC = VICRmin

(VDD /VIO)
VDD = 5 V to 10 V,
VO = 5 V,
No load
VO = 1.4 V
VIC = 5 V,
1900
VIO
V/C
25C
25
C
0.2
to
9
Full range
0.2
to
8.5

(see Note 5)
mV
0.3
to
9.2
pA
pA
25C
8.9
0C
7.8
8.9
70C
7.8
8.9
25C
50
0C
50
70C
50
25C
50
860
0C
50
1025
70C
50
660
25C
65
97
0C
60
97
70C
60
97
25C
70
97
0C
60
97
70C
60
98
mV
V/mV
dB
dB
25C
29
46
0C
36
66
70C
22
40

NOTES: 4 The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5 This range also applies to each input individually.
DALLAS, TEXAS 75265

PARAMETER
TEST CONDITIONS
TA
TLC27L2I
TLC27L2AI
TLC27L2BI
TLC27L7I
MIN
VO = 1.4 V,
RS = 50 ,
TLC27L2I
VIO
VIC = 0,
RL = 1 M
VIC = 0,
RL = 1 M
Full range
TLC27L2BI
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
Full range
TLC27L7I
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
VIO
IIO
VO = 2.5 V,
VIC = 2.5 V
IIB
VO = 2.5 V,
VIC = 2.5 V
VOH
VOL
AVD
CMRR
kSVR
IDD
Large-signal differential
voltage amplification
VID = 100 mV,
RL = 1 M
VID = 100 mV,
IOL = 0
VO = 0.25 V to 2 V,
RL = 1 M
VIC = VICRmin

(VDD /VIO)
VDD = 5 V to 10 V,
VO = 2.5 V,
No load
VO = 1.4 V
VIC = 2.5 V,
10
0.9
240
DALLAS, TEXAS 75265
mV
2000
3500
25C
170
Full range
500
V
V
2000
25 C to
25C
85C
1.1
25C
0.1
60
85C
24
1000
25C
0.6
60
85C
200
2000
25C
25
C
0.2
to
4
Full range
0.2
to
3.5
25C
3.2
4.1
40C
4.1
85C
4.2
V/C
V/C
0.3
to
4.2
pA
pA
25C
50
40C
50
85C
50
25C
50
480
40C
50
900
85C
50
330
25C
65
94
40C
60
95
85C
60
95
25C
70
97
40C
60
97
85C
60
98
mV
V/mV
dB
dB
25C
20
34
40C
31
54
85C
15
26

5
7
25C

(see Note 5)
MAX
1.1
13
25C
VO = 1.4 V,
RS = 50 ,
TYP
Full range
TLC27L2AI
Average temperature coefficient of

input offset voltage
VICR
25C
UNIT

PARAMETER
TEST CONDITIONS
TA
TLC27L2I
TLC27L2AI
TLC27L2BI
TLC27L7I
MIN
TLC27L2I
VIO
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
VIC = 0,
RL = 1 M
Full range
TLC27L2BI
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
Full range
TLC27L7I
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
VIO
IIO
VO = 5 V,
VIC = 5 V
IIB
VO = 5 V,
VIC = 5 V
VOH
VOL
AVD
CMRR
kSVR
IDD

amplification
RL = 1 M
VID = 100 mV,
VO = 1 V to 6 V,
IOL = 0
RL = 1 M
VIC = VICRmin

(VDD /VIO)
VDD = 5 V to 10 V,
VO = 5 V,
No load
VO = 1.4 V
VIC = 5 V,
mV
7
235
2000
3500
25C
190
Full range
800
V
V
2900
25 C to
25C
85C
VID = 100 mV,
10
0.9
25C
V/C
V/C
25C
0.1
60
85C
26
1000
25C
0.7
60
85C
220
2000
25C
25
C
0.2
to
9
Full range
0.2
to
8.5

(see Note 5)
MAX
1.1
13
25C
VO = 1.4 V,
RS = 50 ,
TYP
Full range
TLC27L2AI

offset voltage
VICR
25C
UNIT
0.3
to
9.2
pA
pA
25C
8.9
40C
7.8
8.9
85C
7.8
8.9
25C
50
40C
50
85C
50
25C
50
860
40C
50
1550
85C
50
585
25C
65
97
40C
60
97
85C
60
98
25C
70
97
40C
60
97
85C
60
98
mV
V/mV
dB
dB
25C
29
46
40C
49
86
85C
20
36

DALLAS, TEXAS 75265


PARAMETER
TEST CONDITIONS
TA
TLC27L2M
TLC27L7M
MIN
VIO
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
Full range
TLC27L7M
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
Full range
VIO

IIO
IIB
25C
TLC27L2M
VO = 2.5 V,
VO = 2.5 V,
VIC = 2.5 V
VIC = 2.5 V
VOL
AVD
CMRR
kSVR
IDD
VID = 100 mV,
VID = 100 mV,

amplification
VO = 0.25 V to 2 V,
VIC = VICRmin

(VDD /VIO)
VDD = 5 V to 10 V,
VO = 2.5 V,
No load
RL = 1 M
IOL = 0
RL = 1 M
VO = 1.4 V
VIC = 2.5 V,
10
170
DALLAS, TEXAS 75265
mV
V
V/C
25C
0.1
60
pA
125C
1.4
15
nA
25C
0.6
60
pA
125C
35
nA
0.3
to
4.2
25C
0
to
4
0
to
3.5
3.2
55C
4.1
125C
4.2
V
4.1
V
25C
50
55C
50
125C
50
25C
50
500
55C
25
1000
125C
25
200
25C
65
94
55C
60
95
125C
60
85
25C
70
97
55C
60
97
125C
60
98
mV
V/mV
dB
dB
25C
20
34
55C
35
60
125C
14
24

500
3750
1.4

(see Note 5)
1.1
25 C to
25C
125C
Full range
VOH
MAX
12
25C
25C
25
C
VICR
UNIT
TYP


PARAMETER
TEST CONDITIONS
TA
TLC27L2M
TLC27L7M
MIN
VIO
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
Full range
TLC27L7M
VO = 1.4 V,
RS = 50 ,
VIC = 0,
RL = 1 M
Full range
VIO

IIO
IIB
VICR
25C
TLC27L2M
VO = 5 V,
VIC = 5 V
VO = 5 V,
VIC = 5 V
VOL
AVD
CMRR
kSVR
IDD

amplification
VID = 100 mV,
RL = 1 M
VID = 100 mV,
IOL = 0
VO = 1 V to 6 V,
RL = 1 M
VIC = VICRmin

(VDD /VIO)
VDD = 5 V to 10 V,
VO = 5 V,
No load
VO = 1.4 V
VIC = 5 V,
1.1
10
190
800
4300
25 C to
25C
125C
25C
mV
V
V/C
1.4
0.1
60
pA
125C
1.8
15
nA
25C
0.7
60
pA
125C
10
35
nA
25C
25
C
0
to
9
Full range
0
to
8.5

(see Note 5)
MAX
12
25C
25C
VOH
UNIT
TYP
0.3
to
9.2
8.9
55C
7.8
8.8
125C
7.8
25C
50
55C
50
125C
50
25C
50
860
55C
25
1750
125C
25
380
25C
65
97
55C
60
97
125C
60
91
25C
70
97
55C
60
97
125C
60
98
mV
V/mV
dB
dB
25C
29
46
55C
56
96
125C
18
30
Full range is 55 C to 125C.

DALLAS, TEXAS 75265

operating characteristics, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLC27L2C
TLC27L2AC
TLC27L2BC
TLC27L7C
MIN
VI(PP) = 1 V
SR
RL = 1 M,
M ,
CL = 20 pF,
See Figure 1
Slew rate at unity gain
VI(PP) = 2.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,
See Figure 2
RS = 20 ,
BOM
Maximum output-swing bandwidth
VO = VOH,
RL = 1 M,
CL = 20 pF,
See Figure 1
VI = 10 mV,
See Figure 3
CL = 20 pF,
B1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
Phase margin
f = B1,
See Figure 3
TYP
25C
0.03
0C
0.04
70C
0.03
25C
0.03
0C
0.03
70C
0.02
25C
68
25C
0C
70C
4.5
25C
85
0C
100
70C
65
25C
34
0C
36
70C
30
UNIT
MAX
V/ s
V/s
nV/Hz
kHz
kHz
PARAMETER
TEST CONDITIONS
TA
TLC27L2C
TLC27L2AC
TLC27L2BC
TLC27L7C
MIN
VI(PP) = 1 V
SR
RL = 1 M,
M ,
CL = 20 pF,
See Figure 1
VI(PP) = 5.5 V
Vn
BOM
B1
10
f = 1 kHz,
See Figure 2
RS = 20 ,
VO = VOH,
RL = 1 M,
CL = 20 pF,
See Figure 1
VI = 10 mV,
See Figure 3
CL = 20 pF,
Phase margin
VI = 10 mV,
CL = 20 pF,
f = B1,
See Figure 3
DALLAS, TEXAS 75265
TYP
25C
0.05
0C
0.05
70C
0.04
25C
0.04
0C
0.05
70C
0.04
25C
68
25C
0C
1.3
70C
0.9
25C
110
0C
125
70C
90
25C
38
0C
40
70C
34
UNIT
MAX
V/
V/ss
nV/Hz
kHz
kHz

PARAMETER
TEST CONDITIONS
TA
TLC27L2I
TLC27L2AI
TLC27L2BI
TLC27L7I
MIN
VI(PP) = 1 V
SR
RL = 1 M,
M ,
CL = 20 pF,
See Figure 1
VI(PP) = 2.5 V
Vn
f = 1 kHz,
See Figure 2
RS = 20 ,
BOM
VO = VOH,
RL = 1 M,
CL = 20 pF,
See Figure 1
VI = 10 mV,
See Figure 3
CL = 20 pF,
B1
VI = 10 mV,
CL = 20 pF,
Phase margin
f = B1,
See Figure 3
TYP
25C
0.03
40C
0.04
85C
0.03
25C
0.03
40C
0.04
85C
0.02
25C
68
25C
40C
85C
25C
85
40C
130
85C
55
25C
34
40C
38
85C
29
UNIT
MAX
V/ s
V/s
nV/Hz
kHz
kHz
PARAMETER
TEST CONDITIONS
TA
TLC27L2I
TLC27L2AI
TLC27L2BI
TLC27L7I
MIN
VI(PP) = 1 V
SR
RL = 1 M,
M ,
CL = 20 pF,
See Figure 1
VI(PP) = 5.5 V
Vn
BOM
B1
f = 1 kHz,
See Figure 2
RS = 20 ,
VO = VOH,
RL = 1 M,
CL = 20 pF,
See Figure 1
VI = 10 mV,
See Figure 3
CL = 20 pF,
Phase margin
VI = 10 mV,
CL = 20 pF,
f = B1,
See Figure 3
DALLAS, TEXAS 75265
TYP
25C
0.05
40C
0.06
85C
0.03
25C
0.04
40C
0.05
85C
0.03
25C
68
25C
40C
1.4
85C
0.8
25C
110
40C
155
85C
80
25C
38
40C
42
85C
32
UNIT
MAX
V/
V/ss
nV/Hz
kHz
kHz
11


PARAMETER
TEST CONDITIONS
TA
TLC27L2M
TLC27L7M
MIN
VI(PP) = 1 V
SR
RL = 1 M,
M ,
CL = 20 pF,
See Figure 1
VI(PP) = 2.5 V
Vn
BOM
B1
f = 1 kHz,
See Figure 2
RS = 20 ,
VO = VOH,
RL = 1 M,
CL = 20 pF,
See Figure 1
VI = 10 mV,
See Figure 3
CL = 20 pF,
VI = 10 mV,
CL = 20 pF,
Phase margin
f = B1,
See Figure 3
TYP
25C
0.03
55C
0.04
125C
0.02
25C
0.03
55C
0.04
125C
0.02
25C
68
25C
55C
125C
25C
85
55C
140
125C
45
25C
34
55C
39
125C
25
UNIT
MAX
V/ s
V/s
nV/Hz
kHz
kHz

PARAMETER
TEST CONDITIONS
TA
TLC27L2M
TLC27L7M
MIN
VI(PP) = 1 V
SR
M ,
RL = 1 M,
CL = 20 pF,
See Figure 1
VI(PP) = 5.5 V
Vn
f = 1 kHz,
See Figure 2
RS = 20 ,
BOM
VO = VOH,
RL = 1 M,
CL = 20 pF,
See Figure 1
VI = 10 mV,
See Figure 3
CL = 20 pF,
B1
12
Phase margin
VI = 10 mV,
CL = 20 pF,
f = B1,
See Figure 3
DALLAS, TEXAS 75265
TYP
25C
0.05
55C
0.06
125C
0.03
25C
0.04
55C
0.06
125C
0.03
25C
68
25C
55C
1.5
125C
0.7
25C
110
55C
165
125C
70
25C
38
55C
43
125C
29
UNIT
MAX
V/ s
V/s
nV/Hz
kHz
kHz

PARAMETER MEASUREMENT INFORMATION

single-supply versus split-supply test circuits
Because the TLC27L2 and TLC27L7 are optimized for single-supply operation, circuit configurations used for
the various tests often present some inconvenience since the input signal, in many cases, must be offset from
ground. This inconvenience can be avoided by testing the device with split supplies and the output load tied to
the negative rail. A comparison of single-supply versus split-supply test circuits is shown in Figure 1. The use
of either circuit gives the same result.
VDD +
VDD
VO
VO
VI
+
CL
RL
VI
CL
RL
VDD
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 1. Unity-Gain Amplifier

2 k
2 k
VDD +
VDD
20
VO
VO
1/2 VDD
+
20
20
20
VDD
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 2. Noise-Test Circuit

10 k
VDD
VDD +
100
100
VI
VI
10 k
VO
VO
1/2 VDD
CL
CL
VDD
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 3. Gain-of-100 Inverting Amplifier
DALLAS, TEXAS 75265
13


input bias current
Because of the high input impedance of the TLC27L2 and TLC27L7 operational amplifiers, attempts to measure
the input bias current can result in erroneous readings. The bias current at normal room ambient temperature
is typically less than 1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are
offered to avoid erroneous measurements:
1.
Isolate the device from other potential leakage sources.Use a grounded shield around and between the
device inputs (see Figure 4). Leakages that would otherwise flow to the inputs are shunted away.
2. Compensate for the leakage of the test socket by actually performing an input bias current test (using
a picoammeter) with no device in the test socket. The actual input bias current can then be calculated
by subtracting the open-socket leakage readings from the readings obtained with a device in the test
socket.
One word of caution: many automatic testers as well as some bench-top operational amplifier testers use the
servo-loop technique with a resistor in series with the device input to measure the input bias current (the voltage
drop across the series resistor is measured and the bias current is calculated). This method requires that a
device be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not
feasible using this method.
8
V = VIC
Figure 4. Isolation Metal Around Device Inputs

(JG and P packages)
low-level output voltage

To obtain low-supply-voltage operation, some compromise was necessary in the input stage. This compromise
results in the device low-level output being dependent on both the common-mode input voltage level as well
as the differential input voltage level. When attempting to correlate low-level output readings with those quoted
in the electrical specifications, these two conditions should be observed. If conditions other than these are to
be used, please refer to Figure 14 through Figure 19 in the Typical Characteristics of this data sheet.
input offset voltage temperature coefficient

Erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. This
parameter is actually a calculation using input offset voltage measurements obtained at two different
temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device
and the test socket. This moisture results in leakage and contact resistance, which can cause erroneous input
offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the
moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these
measurements be performed at temperatures above freezing to minimize error.
14
DALLAS, TEXAS 75265


full-power response
Full-power response, the frequency above which the operational amplifier slew rate limits the output voltage
swing, is often specified two ways: full-linear response and full-peak response. The full-linear response is
generally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidal
input signal until the maximum frequency is found above which the output contains significant distortion. The
full-peak response is defined as the maximum output frequency, without regard to distortion, above which full
peak-to-peak output swing cannot be maintained.
Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified
in this data sheet and is measured using the circuit of Figure 1. The initial setup involves the use of a sinusoidal
input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is
increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same
amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained
(see Figure 5). A square wave is used to allow a more accurate determination of the point at which the maximum
peak-to-peak output is reached.
(a) f = 100 kHz
(b) BOM > f > 100 kHz
(c) f = BOM
(d) f > BOM
Figure 5. Full-Power-Response Output Signal
test time
Inadequate test time is a frequent problem, especially when testing CMOS high-volume, short-test-time
environment. Internal capacitances are inherently higher in CMOS devices and require longer test times than
their bipolar and BiFET counterparts. The problem becomes more pronounced with reduced supply levels and
lower temperatures.
DALLAS, TEXAS 75265
15

TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
16
VIO
VIO
Distribution
6, 7
Temperature coefficient of input offset voltage
Distribution
8, 9
VOH
vs High-level output current

vs Supply voltage
vs Free-air temperature
10, 11
12
13
VOL
vs Differential input voltage

vs Low-level output current
14,16
15,17
18, 19
AVD
Large-signal differential voltage amplification
vs Supply voltage
vs Frequency
20
21
32, 33
IIB
IIO
Input bias current
22
Input offset current
22
VIC
Common-mode input voltage
vs Supply voltage
23
IDD
Supply current
vs Supply voltage
24
25
SR
Slew rate
vs Supply voltage
26
27
Normalized slew rate
28
VO(PP)
Maximum peak-to-peak output voltage
vs Frequency
29
B1
vs Supply voltage
30
31
Phase margin
vs Supply voltage
vs Capacitive Load
34
35
36
Vn
vs Frequency
37
Phase shift
vs Frequency
32, 33
DALLAS, TEXAS 75265

70
70
905 Amplifiers Tested From 6 Wafer Lots
VDD = 5 V
TA = 25C
P Package
60
60

VDD = 10 V
TA = 25C
P Package
50
40
30
20
50
40
30
20
10
10
0
5
3 2 1 0
1
2
3
VIO Input Offset Voltage mV
Figure 6
70
VDD = 5 V
TA = 25C to 125C
P Package
Outliers:
(1) 19.2 V/C
(1) 12.1 V/C
60
DISTRIBUTION OF TLC27LC AND TLC27L7

TEMPERATURE COEFFICIENT
70
50
Figure 7
DISTRIBUTION OF TLC27LC AND TLC27L7

TEMPERATURE COEFFICIENT
60
3 2 1 0
1
2
3
VIO Input Offset Voltage mV
40
30
20
50
40

VDD = 10 V
TA = 25C to 125C
P Package
Outliers:
(1) 18.7 V/C
(1) 11.6 V/C
30
20
10
10
0
2
4
6
8
10 8 6 4 2 0
VIO Temperature Coefficient V/C
10
0
10 8 6 4 2 0
2
4
6
8
VIO Temperature Coefficient V/C
10
Figure 9
Figure 8
DALLAS, TEXAS 75265
17

HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT

vs
HIGH-LEVEL OUTPUT CURRENT
16
VOH
VOH High-Level Output Voltage V
VOH
VID = 100 mV
TA = 25C
4
VDD = 5 V
3
VDD = 4 V
VDD = 3 V
0
0
VDD = 16 V
12
2
4
6
8
IOH High-Level Output Current mA
8
VDD = 10 V
6
4
2
0
10
5 10 15 20 25 30 35 40
IOH High-Level Output Current mA
Figure 11
Figure 10

vs
FREE-AIR TEMPERATURE

vs
SUPPLY VOLTAGE
VID = 100 mV
RL = 10 k
TA = 25C
14
12
10
6
4
2
0
0
VDD 1.6
VOH
VOH
16
VID = 100 mV
TA = 25C
10
14
4
6
8
10
12
VDD Supply Voltage V
14
16
1.7
VDD = 5 V
1.8
IOH = 5 mA
VID = 100 mA
1.9
2
VDD = 10 V
2.1
2.2
2.3
2.4
75
50
25
0
20
50
75
100
TA Free-Air Temperature C
Figure 13
Figure 12
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
18
DALLAS, TEXAS 75265
125

LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE

vs
700
500
VOL
VOL Low-Level Output Voltage mV
VOL
VDD = 5 V
IOL = 5 mA
TA = 25C
600
VID = 100 mV
500
400
VID = 1 V
300
0
0.5
1
1.5
2
2.5
3
3.3
VIC Common-Mode Input Voltage V
VDD = 10 V
IOL = 5 mA
TA = 25C
450
400
VID = 100 mV
VID = 1 V
350
VID = 2.5 V
300
250
2
4
6
8
1
3
5
7
9
VIC Common-Mode Input Voltage V
Figure 15
Figure 14

vs

vs
DIFFERENTIAL INPUT VOLTAGE
900
IOL = 5 mA
VIC = |VID/2|
TA = 25C
VOL
VOL
800
700
600
500
VDD = 5 V
400
300
VDD = 10 V
200
100
800
700
600
IOL = 5 mA
VID = 1 V
VIC = 0.5 V
500
2 3 4 5 6 7 8 9 10
VID Differential Input Voltage V
VDD = 5 V
400
VDD = 10 V
300
0
0
10
200
100
0
75
50
25
0
25
50
75
100
125
Figure 17
Figure 16
DALLAS, TEXAS 75265
19

vs
LOW-LEVEL OUTPUT CURRENT
VOL
VOL Low-Level Output Voltage V
0.9
0.8
VDD = 5 V
0.7
VDD = 4 V
0.6
VDD = 3 V
0.5
0.4
0.2
0.1
0
1
2
3
4
5
6
7
IOL Low-Level Output Current mA
VID = 1 V
VIC = 0.5 V
TA = 25C
2.5
1.5
0.5
5
10
15
20
25
IOL Low-Level Output Current mA
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
SUPPLY VOLTAGE
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
2000
2000
AVD
AVD Large-Signal Differential
Voltage Amplification V/mV
TA = 55C
1600
1400
TA = 0C
1600
1400
1200
25C
1000
70C
800
85C
600
400
125C
200
0
0
4
6
8
10
12
14
16
RL = 1 M
1800
40C
AVD
Voltage Amplification V/mV
RL = 1 M
1800
VDD = 10 V
1200
1000
800
600
VDD = 5 V
400
200
0
75
50
Figure 20
25
0
25
50
75
100
Figure 21
20
30
Figure 19
Figure 18
VDD = 16 V
VDD = 10 V
0.3
VID = 1 V
VIC = 0.5 V
TA = 25C
VOL
VOL Low-Level Output Voltage V

vs
LOW-LEVEL OUTPUT CURRENT
DALLAS, TEXAS 75265
125

COMMON-MODE
INPUT VOLTAGE POSITIVE LIMIT
vs
SUPPLY VOLTAGE
10000
16
VDD = 10 V
VIC = 5 V
See Note A
1000
100
VI Common-Mode Input Voltage V

VIC
IIIB
I IO Input Bias and Offset Currents pA
IB and IIO
INPUT BIAS CURRENT AND INPUT OFFSET CURRENT

vs
IIB
IIO
10
0.1
25
45
65
85
105
125
TA = 25C
14
12
10
8
6
4
2
0
0
NOTE A: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
4
6
8
10
12
14
16
Figure 23
Figure 22
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
SUPPLY CURRENT
vs
90
60
TA = 55C
VO = VDD/2
No Load
80
VO = VDD/2
No Load
40C
60
50
0C
40
25C
30
70C
20
125C
0
2
4
6
8
10
12
14
40
VDD = 10 V
30
20
VDD = 5 V
10
10
IDD
mA
I DD Supply Current
A
IDD
mA
I DD Supply Current
A
50
70
16
0
75
50
25
0
25
50
75
100
125
Figure 25
Figure 24
DALLAS, TEXAS 75265
21

SLEW RATE
vs
SUPPLY VOLTAGE
SLEW RATE
vs
0.07
0.07
AV = 1
VI(PP) = 1 V
RL =1 M
CL = 20 pF
TA = 25C
See Figure 1
0.05
0.06
SR Slew Rate V/s s
SR Slew Rate V/s s
0.06
0.04
0.03
0.03
0.01
0.01
4
6
8
10
12
14
0.00
75
16
VDD = 10 V
VI(PP) = 1 V
0.04
0.02
0.00
VDD = 5 V
VI(PP) = 1 V
VDD = 5 V
VI(PP) = 2.5 V
50
NORMALIZED SLEW RATE

vs
VO(PP) Maximum Peak-to-Peak Output Voltage V
Normalized Slew Rate
1.2
1.1
1
AV = 1
VIPP = 1 V
RL =1 M
CL = 20 pF
VDD = 5 V
0.9
0.8
0.7
0.6
0.5
75
50
25
0
25
50
75
100
125
10
9
VDD = 10 V
7
6
5
TA = 125C
TA = 25C
TA = 55C
VDD = 5 V
4
3
RL = 1 M
See Figure 1
2
1
0
0.1
Figure 28
1
10
f Frequency kHz
Figure 29
22
125
MAXIMUM-PEAK-TO-PEAK OUTPUT VOLTAGE

vs
FREQUENCY
1.4
VDD = 10 V
25
0
25
50
75
100
Figure 27
Figure 26
1.3
RL =1 M
CL = 20 pF
AV = 1
See Figure 1
0.05
0.02
VDD = 10 V
VI(PP) = 5.5 V
DALLAS, TEXAS 75265
100

UNITY-GAIN BANDWIDTH
vs
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
150
140
VDD = 5 V
VI = 10 mV
CL = 20 pF
See Figure 3
B1
B1 Unity-Gain Bandwidth kHz
B1
B1 Unity-Gain Bandwidth kHz
130
VI = 10 mV
CL = 20 pF
TA = 25C
See Figure 3
130
110
90
70
50
120
110
100
90
80
70
60
30
75
50
50
25
0
25
50
75
100
125
6
8
10
12
14
16
Figure 31
Figure 30
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
10 7
VDD = 10 V
RL = 1 M
TA = 25C
10 5
10 4
30
AVD
10 3
10 2
60
Phase Shift
AVD
Voltage Amplification
10 6
90
Phase Shift
10 1
120
1
0.1
1
150
10
100
1k
10 k
f Frequency Hz
100 k
180
1M
Figure 32
DALLAS, TEXAS 75265
23

LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
10 7
VDD = 10 V
RL = 1 M
TA = 25C
10 5
10 4
30
AVD
10 3
60
10 2
90
Phase Shift
AVD
Voltage Amplification
10 6
Phase Shift
10 1
120
150
0.1
1
10
100
1k
10 k
f Frequency Hz
100 k
180
1M
Figure 33
PHASE MARGIN
vs
SUPPLY VOLTAGE
PHASE MARGIN
vs
42
40
VI = 10 mV
CL = 20 pF
TA = 25C
See Figure 3
36
38
m
m Phase Margin
m
m Phase Margin
40
VDD = 5 mV
VI = 10 mV
CL = 20 pF
See Figure 3
32
36
34
28
24
32
30
0
4
6
8
10
12
14
16
20
75
50
25
25
50
75
100
Figure 34
Figure 35
24
DALLAS, TEXAS 75265
125

PHASE MARGIN
vs
CAPACITIVE LOAD
37
33
31
29
27
25
0
10
20
30 40 50 60 70 80
CL Capacitive Load pF
90 100
VN
nV/HzHz
V n Equivalent Input Noise Voltage nV/
200
VDD = 5 mV
VI = 10 mV
TA = 25C
See Figure 3
35
m
m Phase Margin
EQUIVALENT INPUT NOISE VOLTAGE

vs
FREQUENCY
VDD = 5 V
RS = 20
TA = 25C
See Figure 2
175
150
125
100
75
50
25
0
Figure 36
10
100
f Frequency Hz
1000
Figure 37
DALLAS, TEXAS 75265
25

APPLICATION INFORMATION
single-supply operation
While the TLC27L2 and TLC27L7 perform well using dual power supplies (also called balanced or split
supplies), the design is optimized for single-supply operation. This design includes an input common-mode
voltage range that encompasses ground as well as an output voltage range that pulls down to ground. The
supply voltage range extends down to 3 V (C-suffix types), thus allowing operation with supply levels commonly
available for TTL and HCMOS; however, for maximum dynamic range, 16-V single-supply operation is
recommended.
Many single-supply applications require that a voltage be applied to one input to establish a reference level that
is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 38).
The low input bias current of the TLC27L2 and TLC27L7 permits the use of very large resistive values to
implement the voltage divider, thus minimizing power consumption.
The TLC27L2 and TLC27L7 work well in conjunction with digital logic; however, when powering both linear
devices and digital logic from the same power supply, the following precautions are recommended:
1. Power the linear devices from separate bypassed supply lines (see Figure 39); otherwise, the linear
device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital
logic.
2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive
decoupling is often adequate; however, high-frequency applications may require RC decoupling.
VDD
R4
R1
R2
VI
VO
+
VREF
R3
REF
C
0.01 F
+ V
+
R3
DD R1 ) R3
VREF VI R4
R2
) V
Figure 38. Inverting Amplifier With Voltage Reference
VO
Logic
Logic
Logic
Power
Supply
(a) COMMON SUPPLY RAILS
VO
Logic
Logic
Logic
Power
Supply
(b) SEPARATE BYPASSED SUPPLY RAILS (preferred)
Figure 39. Common Versus Separate Supply Rails
26
DALLAS, TEXAS 75265
REF

input characteristics
The TLC27L2 and TLC27L7 are specified with a minimum and a maximum input voltage that, if exceeded at
either input, could cause the device to malfunction. Exceeding this specified range is a common problem,
especially in single-supply operation. Note that the lower range limit includes the negative rail, while the upper
range limit is specified at VDD 1 V at TA = 25C and at VDD 1.5 V at all other temperatures.
The use of the polysilicon-gate process and the careful input circuit design gives the TLC27L2 and TLC27L7
very good input offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage
drift in CMOS devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus
dopant implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate)
alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude.
The offset voltage drift with time has been calculated to be typically 0.1 V/month, including the first month of
operation.
Because of the extremely high input impedance and resulting low bias current requirements, the TLC27L2 and
TLC27L7 are well suited for low-level signal processing; however, leakage currents on printed circuit boards
and sockets can easily exceed bias current requirements and cause a degradation in device performance. It
is good practice to include guard rings around inputs (similar to those of Figure 4 in the Parameter Measurement
Information section). These guards should be driven from a low-impedance source at the same voltage level
as the common-mode input (see Figure 40).
Unused amplifiers should be connected as grounded unity-gain followers to avoid possible oscillation.
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage
differential amplifier. The low input bias current requirements of the TLC27L2 and TLC27L7 result in a low noise
current, which is insignificant in most applications. This feature makes the devices especially favorable over
bipolar devices when using values of circuit impedance greater than 50 k, since bipolar devices exhibit greater
noise currents.
VO
+
(b) INVERTING AMPLIFIER
VI
(a) NONINVERTING AMPLIFIER
VI
VI
VO
VO
(c) UNITY-GAIN AMPLIFIER
Figure 40. Guard-Ring Schemes
output characteristics
The output stage of the TLC27L2 and TLC27L7 is designed to sink and source relatively high amounts of current
(see typical characteristics). If the output is subjected to a short-circuit condition, this high current capability can
cause device damage under certain conditions. Output current capability increases with supply voltage.
All operating characteristics of the TLC27L2 and TLC27L7 were measured using a 20-pF load. The devices
drive higher capacitive loads; however, as output load capacitance increases, the resulting response pole
occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation (see Figure 41). In many
cases, adding a small amount of resistance in series with the load capacitance alleviates the problem.
DALLAS, TEXAS 75265
27

output characteristics (continued)
(a) CL = 20 pF, RL = NO LOAD
(b) CL = 260 pF, RL = NO LOAD
2.5 V
VO
+
VI
TA = 25C
f = 1 kHz
VI(PP) = 1 V
CL
2.5 V
(d) TEST CIRCUIT
(c) CL = 310 pF, RL = NO LOAD
Figure 41. Effect of Capacitive Loads and Test Circuit

Although the TLC27L2 and TLC27L7 possess excellent high-level output voltage and current capability,
methods for boosting this capability are available, if needed. The simplest method involves the use of a pullup
resistor (RP) connected from the output to the positive supply rail (see Figure 42). There are two disadvantages
to the use of this circuit. First, the NMOS pulldown transistor N4 (see equivalent schematic) must sink a
comparatively large amount of current. In this circuit, N4 behaves like a linear resistor with an on-resistance
between approximately 60 and 180 , depending on how hard the operational amplifier input is driven. With
very low values of RP, a voltage offset from 0 V at the output occurs. Second, pullup resistor RP acts as a
drain load to N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not
supplying the output current.
28
DALLAS, TEXAS 75265

output characteristics (continued)
VDD
VI
RP
IP
VO
IF
R2
RL
IL
R1
VO
+
V V
DD O
) I ) I
F
L
P
IP = Pullup current required

by the operational amplifier
(typically 500 A)
Figure 42. Resistive Pullup to Increase VOH
Figure 43. Compensation for

Input Capacitance
feedback
Operational amplifier circuits nearly always employ feedback, and since feedback is the first prerequisite for
oscillation, some caution is appropriate. Most oscillation problems result from driving capacitive loads
(discussed previously) and ignoring stray input capacitance. A small-value capacitor connected in parallel with
the feedback resistor is an effective remedy (see Figure 43). The value of this capacitor is optimized empirically.
electrostatic discharge protection

The TLC27L2 and TLC27L7 incorporate an internal electrostatic discharge (ESD) protection circuit that
prevents functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care
should be exercised, however, when handling these devices, as exposure to ESD may result in the degradation
of the device parametric performance. The protection circuit also causes the input bias currents to be
temperature dependent and have the characteristics of a reverse-biased diode.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC27L2 and
TLC27L7 inputs and outputs were designed to withstand 100-mA surge currents without sustaining latch-up;
however, techniques should be used to reduce the chance of latch-up whenever possible. Internal protection
diodes should not, by design, be forward biased. Applied input and output voltage should not exceed the supply
voltage by more than 300 mV. Care should be exercised when using capacitive coupling on pulse generators.
Supply transients should be shunted by the use of decoupling capacitors (0.1 F typical) located across the
supply rails as close to the device as possible.
The current path established if latch-up occurs is usually between the positive supply rail and ground and can
be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply
voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the
forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of
latch-up occurring increases with increasing temperature and supply voltages.
DALLAS, TEXAS 75265
29

1/2
TLC27L2
VO1
500 k
5V
500 k
+
VO2
1/2
TLC27L2
0.1 F
500 k
500 k
Figure 44. Multivibrator

100 k
VDD
100 k
Set
Reset
100 k
1/2
TLC27L2
33 k
NOTE: VDD = 5 V to 16 V
Figure 45. Set /Reset Flip-Flop
30
DALLAS, TEXAS 75265

VDD
VI
1/2
TLC27L7
VO
90 k
VDD
C
S1
SELECT:
AV
S1
10
X1
TLC4066
S2
100
1
9 k
S2
X2
Analog
Switch
2
1 k
Figure 46. Amplifier With Digital Gain Selection

10 k
VDD
20 k
VI
VO
1/2
TLC27L2
100 k
+
Figure 47. Full-Wave Rectifier
DALLAS, TEXAS 75265
31

0.016 F
5V
VI
10 k
10 k
+
VO
0.016 F
1/2
TLC27L2
NOTE: Normalized to fc = 1 kHz and RL = 10 k
Figure 48. Two-Pole Low-Pass Butterworth Filter

R2
100 k
VDD
R1
10 k
VIA
R1
10 k
VIB
VO
+
1/2
TLC27L7
R2
100 k
V
+ R2 V V
IA
O
R1 IB
Figure 49. Difference Amplifier
32
DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM

www.ti.com
26-Mar-2010
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)

Qty
Lead/Ball Finish
MSL Peak Temp (3)
5962-89494032A
OBSOLETE
LCCC
FK
20
TBD
Call TI
Call TI
5962-8949403PA
OBSOLETE
CDIP
JG
TBD
Call TI
Call TI
5962-89494042A
OBSOLETE
LCCC
FK
20
TBD
Call TI
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5962-8949404PA
OBSOLETE
CDIP
JG
TBD
Call TI
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TLC27L2ACD
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2ACDG4
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2ACDR
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2ACDRG4
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2ACP
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2ACPE4
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2ACPSLE
OBSOLETE
SO
PS
TBD
Call TI
TLC27L2AID
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2AIDG4
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2AIDR
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2AIDRG4
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2AIP
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2AIPE4
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2AMFKB
OBSOLETE
LCCC
FK
20
TBD
Call TI
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TLC27L2AMJG
OBSOLETE
CDIP
JG
TBD
Call TI
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TLC27L2AMJGB
OBSOLETE
CDIP
JG
TBD
Call TI
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TLC27L2BCD
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2BCDG4
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2BCDR
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2BCDRG4
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2BCP
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2BCPE4
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2BID
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2BIDG4
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Addendum-Page 1
Call TI

www.ti.com
26-Mar-2010
Orderable Device
Status (1)
Package
Type
Package
Drawing

Qty
TLC27L2BIDR
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2BIDRG4
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2BIP
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2BIPE4
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2CD
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2CDG4
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2CDR
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2CDRG4
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2CP
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2CPE4
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2CPSR
ACTIVE
SO
PS
2000 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2CPSRG4
ACTIVE
SO
PS
2000 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2CPW
ACTIVE
TSSOP
PW
150
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2CPWG4
ACTIVE
TSSOP
PW
150
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2CPWLE
OBSOLETE
TSSOP
PW
TLC27L2CPWR
ACTIVE
TSSOP
PW
2000 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2CPWRG4
ACTIVE
TSSOP
PW
2000 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2ID
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2IDG4
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2IDR
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2IDRG4
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2IP
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2IPE4
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L2IPW
ACTIVE
TSSOP
PW
150
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2IPWG4
ACTIVE
TSSOP
PW
150
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2IPWLE
OBSOLETE
TSSOP
PW
TLC27L2IPWR
ACTIVE
TSSOP
PW
TBD
TBD
2000 Green (RoHS &
Addendum-Page 2
Lead/Ball Finish
Call TI
Call TI
CU NIPDAU
MSL Peak Temp (3)
Call TI
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Level-1-260C-UNLIM

www.ti.com
26-Mar-2010
Orderable Device
Status (1)
Package
Type
Package
Drawing

Qty
TLC27L2IPWRG4
ACTIVE
TSSOP
PW
Lead/Ball Finish
MSL Peak Temp (3)
no Sb/Br)
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2MD
ACTIVE
SOIC
75
TBD
CU NIPDAU
Level-1-220C-UNLIM
TLC27L2MDG4
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TBD
CU NIPDAU
Level-1-220C-UNLIM
CU NIPDAU
Level-1-260C-UNLIM
TLC27L2MDR
ACTIVE
SOIC
2500
TLC27L2MDRG4
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
TLC27L2MFKB
OBSOLETE
LCCC
FK
20
TBD
Call TI
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TLC27L2MJG
OBSOLETE
CDIP
JG
TBD
Call TI
Call TI
TLC27L2MJGB
OBSOLETE
CDIP
JG
TBD
Call TI
Call TI
TLC27L7CD
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L7CDG4
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L7CDR
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L7CDRG4
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L7CP
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L7CPE4
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L7CPSR
ACTIVE
SO
PS
2000 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L7CPSRG4
ACTIVE
SO
PS
2000 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L7ID
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L7IDG4
ACTIVE
SOIC
75
Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L7IDR
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L7IDRG4
ACTIVE
SOIC
2500 Green (RoHS &

no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC27L7IP
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L7IPE4
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC27L7MFKB
OBSOLETE
LCCC
FK
20
TBD
Call TI
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TLC27L7MJG
OBSOLETE
CDIP
JG
TBD
Call TI
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TLC27L7MJGB
OBSOLETE
CDIP
JG
TBD
Call TI
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(1)
The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 3

www.ti.com
26-Mar-2010
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 4
PACKAGE MATERIALS INFORMATION

www.ti.com
9-Dec-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins

Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TLC27L2ACDR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC27L2AIDR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC27L2BCDR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC27L2BIDR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC27L2CDR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC27L2CPSR
SO
PS
2000
330.0
16.4
8.2
6.6
2.5
12.0
16.0
Q1
TLC27L2CPWR
TSSOP
PW
2000
330.0
12.4
7.0
3.6
1.6
8.0
12.0
Q1
TLC27L2IDR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC27L2IPWR
TSSOP
PW
2000
330.0
12.4
7.0
3.6
1.6
8.0
12.0
Q1
TLC27L2MDR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC27L7CDR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC27L7CPSR
SO
PS
2000
330.0
16.4
8.2
6.6
2.5
12.0
16.0
Q1
TLC27L7IDR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION

www.ti.com
9-Dec-2010
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TLC27L2ACDR
SOIC
2500
340.5
338.1
20.6
TLC27L2AIDR
SOIC
2500
340.5
338.1
20.6
TLC27L2BCDR
SOIC
2500
340.5
338.1
20.6
TLC27L2BIDR
SOIC
2500
340.5
338.1
20.6
TLC27L2CDR
SOIC
2500
340.5
338.1
20.6
TLC27L2CPSR
SO
PS
2000
346.0
346.0
33.0
TLC27L2CPWR
TSSOP
PW
2000
346.0
346.0
29.0
TLC27L2IDR
SOIC
2500
340.5
338.1
20.6
TLC27L2IPWR
TSSOP
PW
2000
346.0
346.0
29.0
TLC27L2MDR
SOIC
2500
346.0
346.0
29.0
TLC27L7CDR
SOIC
2500
340.5
338.1
20.6
TLC27L7CPSR
SO
PS
2000
346.0
346.0
33.0
TLC27L7IDR
SOIC
2500
340.5
338.1
20.6
Pack Materials-Page 2
MECHANICAL DATA
MCER001A JANUARY 1995 REVISED JANUARY 1997
JG (R-GDIP-T8)
CERAMIC DUAL-IN-LINE
0.400 (10,16)
0.355 (9,00)
8
0.280 (7,11)
0.245 (6,22)
0.063 (1,60)
0.015 (0,38)
4
0.065 (1,65)
0.045 (1,14)
0.310 (7,87)
0.290 (7,37)
0.020 (0,51) MIN
0.200 (5,08) MAX

Seating Plane
0.130 (3,30) MIN
0.023 (0,58)
0.015 (0,38)
015
0.100 (2,54)
0.014 (0,36)
0.008 (0,20)
4040107/C 08/96
NOTES: A.
B.
C.
D.
E.
All linear dimensions are in inches (millimeters).

This drawing is subject to change without notice.
This package can be hermetically sealed with a ceramic lid using glass frit.
Index point is provided on cap for terminal identification.
Falls within MIL STD 1835 GDIP1-T8
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TLC27L2, TLC27L2A, TLC27L2B, TLC27L7

LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS

D Trimmed Offset Voltage:

TLC27L7 . . . 500 V Max at 25C,

The TLC27L2 and TLC27L7 dual operational

335 Units Tested From 2 Wafer Lots

LinCMOS is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

TLC27L2, TLC27L2A, TLC27L2B, TLC27L7

equivalent schematic (each amplifier)

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

TLC27L2, TLC27L2A, TLC27L2B, TLC27L7

recommended operating conditions

Supply voltage, VDD

Operating free-air temperature, TA

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

TLC27L2, TLC27L2A, TLC27L2B, TLC27L7

electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)

Input offset current (see Note 4)

Input bias current (see Note 4)

Low-level output voltage

Large-signal differential voltage

Common-mode rejection ratio

VID = 100 mV,

VID = 100 mV,

Supply-voltage rejection ratio

Supply current (two amplifiers)

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

Full range is 0C to 70C.

Common-mode input voltage range

High-level output voltage

Input offset voltage

Average temperature coefficient of input

TLC27L2, TLC27L2A, TLC27L2B, TLC27L7

electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted)

Input offset voltage

Average temperature coefficient of input

Input offset current (see Note 4)

Input bias current (see Note 4)

High-level output voltage

Low-level output voltage

Large-signal differential voltage

Common-mode rejection ratio

VID = 100 mV,

VID = 100 mV,

Supply-voltage rejection ratio

Supply current (two amplifiers)

Common-mode input voltage range

Full range is 0C to 70C.

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

TLC27L2, TLC27L2A, TLC27L2B, TLC27L7

electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)

Input offset current (see Note 4)

Input bias current (see Note 4)

Low-level output voltage

Common-mode rejection ratio