0 penilaian0% menganggap dokumen ini bermanfaat (0 suara)
59 tayangan7 halaman
We present several fully printed organic complementary circuits using nand p-type organic thin-film transistors. Organic layers are deposited using a low-cost screen-printing technique. The inverters show a high gain and a switching point at exactly V DD / 2.
We present several fully printed organic complementary circuits using nand p-type organic thin-film transistors. Organic layers are deposited using a low-cost screen-printing technique. The inverters show a high gain and a switching point at exactly V DD / 2.
We present several fully printed organic complementary circuits using nand p-type organic thin-film transistors. Organic layers are deposited using a low-cost screen-printing technique. The inverters show a high gain and a switching point at exactly V DD / 2.
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO.
10, OCTOBER 2011 3587
High-Gain Fully Printed Organic Complementary Circuits on Flexible Plastic Foils M. Guerin, A. Daami, S. Jacob, E. Bergeret, E. Bnevent, P. Pannier, and R. Coppard AbstractWe present several fully printed organic complemen- tary circuits using n- and p-type organic thin-lm transistors. n-Type and p-type devices are developed on a exible poly- ethylene-naphthalate substrate. All organic layers are deposited using a low-cost screen-printing technique. The inverters show a high gain and a switching point at exactly V DD/2. Aseven-stage voltage-controlled oscillator (VCO) is designed with an organic output buffer, using the n- and p-type organic transistors. This VCO oscillates at a frequency of 186 Hz. Finally, two complemen- tary differential ampliers with high gain and large bandwidth are presented. The ampliers only draw a 1-A current from a 40-V power supply. Index TermsAmplier, foil, inverter, organic, thin lm. I. INTRODUCTION D URING the last years, strong efforts have been done to- ward the development of organic electronics, aiming at re- placing the classic silicon electronics in certain elds such as chemical sensors, photovoltaic cells, or some radio-frequency identication applications. The main advantages of organic electronics, compared with silicon electronics, are its low man- ufacturing cost and its low-temperature fabrication process [1]. This enables the use of exible plastic substrates, such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET) [2]. Moreover, important work has been carried out in order to improve the reliability and the performances of organic thin-lm transistors (OTFT), mainly consisting of improving the carriers mobility in polymers and stabilizing the fabrication process to increase the yield. Moreover, as only p-type OTFTs were available a few years ago, much work was done to obtain stable and high-performance n-type OTFTs. We present in this paper n- and p-type OTFTs, which are used to design fully printed complementary organic circuits on a plastic exible substrate, where organic polymers are used for the gate dielec- tric and the channel of the transistors. Only a few fully printed organic circuits using fast mass-printing technologies have been reported in [3][7]. Moreover, the manufacture of mass-printed stable and high-performance n-type transistors is a process that Manuscript received May 5, 2011; revised June 17, 2011 and July 7, 2011; accepted July 7, 2011. Date of publication August 18, 2011; date of current version September 21, 2011. The review of this paper was arranged by Editor A. C. Arias. M. Guerin, E. Bergeret, E. Bnevent, and P. Pannier are with Aix-Marseille University, 13397 Marseille, France (e-mail: Mathieu.guerin@im2np.fr). A. Daami, S. Jacob, and R. Coppard are with the Laboratoire des Com- posants Imprims, 38 054 Grenoble, France. Color versions of one or more of the gures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identier 10.1109/TED.2011.2162071 is difcult to carry out. Usually, fully printed transistors show lower performances compared with transistors using vacuum deposition or photolithography [16]. Nevertheless, fully printed technology is one of the best ways to develop a very-low-cost means of production, compared with classic silicon technol- ogy. Some circuits are designed and measured in this paper. First, a simple complementary organic inverter is designed, using an n-type and a p-type transistor. This rail-to-rail inverter shows a high gain and a switching point at exactly V DD/2. It also presents a low time delay of 0.43 ms and a cutoff frequency of 850 Hz. Moreover, repetitive measurements show very good stability of the inverter. Then, a voltage-controlled oscillator (VCO) is designed by using a chain of seven fully printed inverters. This VCO oscillates at a frequency of 183 Hz under 40-V supply. Finally, two differential complementary organic ampliers are presented in this paper, i.e., using an n-type dif- ferential pair with a p-type load and using a p-type differential pair with an n-type load. Both differential ampliers show su- perior gains and gain bandwidth (GBW) product, compared to the circuits reported up to now. The n-type differential amplier works up to frequencies above 1 kHz for symmetric 20-V supply and has good resistance to repetitive sweeps. The n-type amplier switches at half of V dd, whereas the p-type amplier suffers an input offset. Some ways such as a bootstrapped gain enhancement structure are proposed to solve this problem. In Section VI, conclusions are drawn, and future works are discussed. II. ORGANIC TRANSISTOR FABRICATION Complementary metaloxidesemiconductor devices are fabricated on a 125-m-thick PEN substrate. A 30-nm gold (Au) source/drain layer also serving as a rst-level connec- tion is formed by laser ablation. An organic semiconductor (polytriarylamine (PTAA) derivative for p-type and acene- based-diimide for n-type transistors) of about 100-nm thickness and then an 800-nm-thick dielectric uoropolymer are screen- printed and annealed, respectively. Finally, the gate layer, which also serves as a second con- nection layer, is also screen-printed using a silver (Ag) paste, giving a thickness of 5 m. A nal annealing at 100
C is then performed. The process alignment of all printed materials is about +/ 25 m. Fig. 1 presents a schematic cross section of the whole process. The whole process fabrication and electrical measurements have been done in air without any sample conservation. 0018-9383/$26.00 2011 IEEE 3588 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 10, OCTOBER 2011 Fig. 1. Schematic cross section of the fully screen-printed OTFT. Fig. 2. Transfer characteristic of fully printed organic N-TFT (W = 2000 m and L = 20 m). Fig. 3. Transfer characteristics of fully printed organic P-TFT (W = 2000 m and L = 20 m). Fig. 4. Output characteristics of fully printed organic N-TFT. DC measurements are performed on the n- and p-type tran- sistors in order to extract their main features to be able to simulate them in analog and digital circuits. The width and length of the transistors are W = 2000 m and L = 20 m, respectively. The minimal width and length are 140 and 5 m, respectively. First, curves are displayed in Figs. 2 and 3, representing the transfer characteristics for the n- and p-type transistors, respectively. Fig. 5. Output characteristics of fully printed organic P-TFT. TABLE I MAIN EXTRACTED FEATURES OF THE n- AND p-TYPE TRANSISTORS Fig. 6. (a) Schematic of an inverter using n- and p-type organic TFTs. (b) Microscopic image of an inverter using n- and p-type organic TFTs. We show in Figs. 4 and 5 the output characteristics of the same transistors. We summarize in Table I the most important parameters extracted from the measured transistors. The extracted mobility values are higher than other fully printed technologies such as [5], and the threshold voltage variation is about 1 V among the transistors of the same type. This V t shift may come from the charge trapping. For example, the trapped holes can decrease the value of the N-OTFT V t [8]. III. COMPLEMENTARY INVERTER A. Circuit Design Most of the organic inverters reported are only made with p-type transistors, with the pull-down being made by using a diode-connected organic p-type transistor or by a zero-VGS load [9]. The availability of an n-type organic transistor allows us to get a classic CMOS inverter schematic, meaning a lower current consumption. The schematic of the organic inverter is shown in Fig. 6. Both n- and p-type transistors are multinger devices having four parallel channels each and of the same sizes. The unitary GUERIN et al.: FULLY PRINTED ORGANIC CIRCUITS ON FLEXIBLE PLASTIC FOILS 3589 Fig. 7. Voltage transfer characteristics of organic inverters for different VDDs. Fig. 8. GAIN versus VIN characteristics of the inverters for different VDDs. channel has a length of 20 m and a width of 250 m. Therefore, the total width of one transistor is actually 1 mm. B. DC Measurements Measurements have been carried out on the organic inverter in order to characterize its performances. The voltages and the current are applied and measured, respectively, with an Agilent HP 4156 device analyzer. First, dc measurements were performed in order to determine the supply voltage range of the inverter. In Fig. 7, the output characteristic of the inverter versus the input voltage is displayed. To obtain this curve, a 0 VVDD sweep with a 50-mV step is applied to the input of the inverter for supply voltages of 5, 10, 20, 30, and 40 V. For each curve, it is important to notice that the switching from high to low output level happens exactly at half of the sup- ply voltage [5]. This results from the good balancing between the pull-down and pull-up transistors of the inverter. It is also interesting to note that the inverter is a rail-to-rail device since the output voltage swings from 0 V to VDD for each supply voltage. Another comment can be done about the important value of the slope, which indicates a high gain. Fig. 8 shows the gain of the inverter as a function of the input voltage for different supply voltages. One can see that the gain is increasing with the supply voltage. The gain reaches a value of 29 for a supply voltage of 40 V, which is four times as much as [10][13]. Some inverters with equivalent or superior gain have been demonstrated ([14] and [15]), but they are not based on a full printer process, using vacuum deposi- tion for the conductive polymer layer. This approach does not permit to carry out low-cost devices since the deposition rate is 0.02 nm/mn. Another study demonstrated higher gain inverters Fig. 9. Noise margin calculation characteristic. Fig. 10. Current consumption of the inverters versus VIN. [16], but the gate insulator is made of atomic-layer-deposited Al 2 O 3 , which is also a vacuum deposition technique. To calculate the noise margins of the inverters, the output characteristic displayed in Fig. 9 is used. The values of VIH (the high input voltage) and VIL (the input low voltage) are extracted at the points where the curves slope is equal to 1, and the VOH (output high voltage) and VOL (output low voltage) values are the output voltages for VIN = 0 V and VDD, respectively. Then, (1) and (2) are used to determine the noise margins NMH (high noise margin) and NML (low noise margin) NMH =VOH VIH (1) NML =VIL VOL. (2) We obtain high values of noise margins as NMH = 17 V and NML = 15 V for a supply voltage of 40 V. The noise margins values are not far from the ideal noise margin value of VDD/2 = 20 V. The current consumed by the inverter is also displayed as a function of the input voltage in Fig. 10. A logarithmic scale is used to be able to represent, on the sale graph, both a strong switching current for a 40-V supply and a weak switching current for the 5-V supply. The current consumption is almost only present during the switch and rapidly decreases for voltages before and beyond VDD/2. This feature, combined with the high noise margin of the inverters, would allow us to carry out organic circuits with a high number of transistors and very low static and dynamic power consumption. As it is an important request to obtain reliable and stable devices, the inverters curve needs to have good reproducibility. 3590 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 10, OCTOBER 2011 Fig. 11. V out versus V in characteristics after 1 and 1000 sweeps at VDD = 40 V. Fig. 12. Block diagram of the output buffer circuit. The device was subject to a thousand sweeps of the input voltage from 0 to 40 V in order to observe the shift of the curve. The output voltage versus the input voltage after 1 and 1000 measurements is displayed on Fig. 11. One can observe a 1-V shift of the curve to the right and a decrease of the gain from 29.2 to 26 dB during the switching. This shift is very little and shows the good behavior of the inverters after repeated measurements. C. AC Measurements In order to performac measurements on the organic inverters, it is necessary to present a measurement device with high impedance. Therefore, an exterior buffer was needed (Fig. 12). A small-signal sinusoidal input, centered on VDD/2, is ap- plied on the input of the inverter, and the output is measured due to an oscilloscope. These measurements are then used to plot the following frequency response: The low-frequency 0-dB gain corresponds to the maximum gain of the inverter (29) for a 20-V supply. In Fig. 13, the graph of the gain as a function of the input signal frequency is displayed. This curve permits to determine a 3-dB cutoff frequency of 850 Hz. IV. VCO A seven-stage VCO is designed, using the inverters previ- ously described. Fig. 14 shows the schematic of the seven- stage VCO and the output buffers; due to this organic buffer designed on the plastic wafer, an exterior buffer was not needed to connect the VCO to the measurement devices. It is possible to have an idea of the VCO frequency value by calculating the time delay of one inverter Fosc = 1 2 N Td (3) Fig. 13. Frequency response of the inverters for VDD = +/ 20 V. Fig. 14. (a) Schematic of the seven-stage ring voltage VCO. (b) Microscopic image of the seven-stage ring VCO. where Fosc is the frequency of the VCO output oscillations, N is the number of stages (which is seven here) in the VCO, and Td is the time delay of one inverter. In order to determinate Td, a relatively high frequency sinusoidal signal (500 Hz) is applied to the inverter, and the output signal is measured on an oscilloscope. Due to this method, the delay between the input and the output is measured, and we obtained a value of Td = 0, 43 ms. By using (3), the frequency of the VCO can be calcu- lated with N = 7 and Td = 0, 43 ms. An output frequency of 166 Hz is obtained. From the measurements, an output frequency of 186 Hz is obtained for a 40-V supply. An output frequency of 186 Hz is a high value for a fully printed organic ring oscillator. Indeed, this value is higher than that reported in [3], [4], [17], or [18], even though our supply voltage is much higher (40 V, compared with 2 V). Some ring oscillators exist, with a much higher frequency, such as [19], which demonstrate a VCO reaching a frequency of 1.1 kHz, but this work uses photolithography to pattern the organic layers and does not precise the way the layers were deposited. Moreover, a SiO2 layer is used to make the gate dielectric, which is not the case in this paper, which relies on fully printed techniques. V. ORGANIC DIFFERENTIAL AMPLIFIER A. Circuit Design Using the same n- and p-type organic fully printed transistors as in the inverters, two differential ampliers are designed. Fig. 15(a) shows the amplier based on an n-type differential GUERIN et al.: FULLY PRINTED ORGANIC CIRCUITS ON FLEXIBLE PLASTIC FOILS 3591 Fig. 15. (a) Schematic of the n-type differential amplier. (b) Schematic of the p-type differential amplier. Fig. 16. Voltage transfer characteristics of organic n-type differential ampli- er for different VDDs. pair, and Fig. 15(b) shows the schematic of the amplier based on the p-type differential pair. The sizes of the n- and p-type organic transistors are the same in both cases, i.e., each transistor has four channels of L = 20 m and W = 500 m. The supply voltage is either positive for the n-type amplier or negative for the p-type one. The differential ampliers are working for supply voltages of 20 V and more. The bias current is set to 1 A for the n-type differential pair and 1 A for the p-type one. This current can be supplied by n- or p-type organic transistors, as displayed in Fig. 4. B. DC Measurements DC measurements are rst performed on the differential ampliers by making a sweep from 40 to +40 V on V in for different supply voltages going from 10 to 40 V for the n-type differential pair and from 40 to 10 for the p-type one. The obtained curves are displayed in Figs. 16 and 17. In Fig. 17, one can see that the p-type differential amplier has an important input offset (14 V) due to V t shift or a mismatch between the differential pairs transistors. A boot- strapped gain enhancement topology used in [9] or [20] could decrease the sensitivity of the ampliers output characteristic to V t shift. This important offset does not appear on the n-type differen- tial pairs graph, which has an input offset voltage lower than 1 V, as one can notice in Fig. 18. From the previous graphs, the gain of the differential ampli- ers are deduced and plotted in Fig. 18. Fig. 17. Voltage transfer characteristics of organic p-type differential ampli- er for different VDDs. Fig. 18. GAIN versus VIN characteristics of the inverters for VDD = 40 V. Fig. 19. Voltage transfer characteristics of an organic n-type differential amplier after 1 and 2000 measures. The n-type differential pair reaches a gain of 22.4 dB and has a very low offset, whereas the p-type differential pair has a gain of 27 dB, which is higher than the n-type pair. Beyond the switching point, the amplier presents no gain at all. In order to determine the robustness of the amplier to repetitive sweeps, a series of 2000 sweeps is applied to the input of the amplier, and the rst and 2001th output characteristics are plotted in Fig. 19. After 2000 sweeps, the dc output characteristic shows a slight shift from the left to the right, introducing a little input positive offset of 3 V while the gain decreases from 22.3 to 21.6 dB. These differences are nevertheless quite insignicant and show the good behavior of the differential amplier after a certain number of measurements. 3592 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 10, OCTOBER 2011 Fig. 20. Bode diagram of the n- and p-type organic differential ampliers. C. AC Measurements In order to perform ac analysis, the buffer used for the inverter characterization is used once again. The following curves showing the evolution of the gain of the differential amplier as a function of the frequency are plotted in Fig. 20. The GBW product of the ampliers can be calculated due to the equation GBW= BWG (4) where BW is the 3-dB cutoff frequency, and G is the gain during the switch, both measured for a supply of +/20 V. The p- and n-type differential pairs present a 3-dB cutoff frequency of 600 and 1025 Hz, meaning a gain band-width product of 13.2 and 13.36 kHz, respectively. After the cutoff frequency, both ampliers gains suffer a 20-dB loss per decade. The p-type differential pair has a GBW superior to [20] and [21], which show a GBW of 10 and 3.6 kHz, respectively. The n-type differential pair is the fastest stable n-type differential amplier reported today to our knowledge. The sensitivity of the circuit to V t shift involves a decrease in the cutoff frequency and the dc gain. In order to correct this problem, a bootstrapped gain enhancement topology will be discussed in future work in order to raise the dc gain and to make the circuits insensitive to the V t dispersion [20]. VI. CONCLUSION A fully printed organic complementary inverter has been presented here. Its main features are a rail-to-rail output voltage, a very high gain of 29 (compared to the published fully printed inverters) [22], a high speed with a time delay of 0.43 ms, and good reliability and reproducibility. The total size of the inverter is only 10 mm 2 . The main characteristics of the inverters are summarized in Table II. A VCO is created using a chain of seven of these inverters. The VCO oscillates at a frequency of 186 Hz for a 40-V supply, which is one of the fastest speeds reported. The whole VCO with an output buffer and the connection pads represents a size of 225 mm 2 . Finally, two fully printed organic differential ampliers have been presented. These ampliers are based either on n or p differential pairs and show a gain band-width product of TABLE II BENCHMARKING OF OUR INVERTER WITH LITERATURE TABLE III RECENT WORK SUMMARIZATION ABOUT ORGANIC DIFFERENTIAL AMPLIFIERS 13 kHz, which is a reference compared to the differential ampli- ers presented up to now. The size of the complete fully printed organic differential amplier is 32 mm 2 . The main features of the presented organic differential ampliers are listed and compared with a reference in Table III. The most important parameters are the high gain bandwidth product, as well as the low current consumption of the amplier. Future work will consist in rectifying the V t dispersion sensitivity of the organic fully printed circuits by using some topologies such as the one presented in [9] or [20]. REFERENCES [1] P. Vicca, S. Steudel, S. Smout, A. Raats, J. Genoe, and P. Heremans, A low-temperature-cross-linked poly (4-vinylphenol) gate-dielectric for organic thin lm transistors, Thin Solid Films, vol. 519, no. 1, pp. 391 393, Oct. 2010. [2] H. Sook Byun, Y. Xu, and C. Kun Song, Fabrication of high performance pentacene thin lm transistors using poly (4-vinylphenol) as the gate insu- lator on polyethyleneterephthalate substrates, Thin Solid Films, vol. 493, no. 1/2, pp. 278281, Dec. 2005. [3] A. C. Huebler, F. Doetz, H. Kempa, H. E. Katz, M. Bartzsch, N. Brandt, I. Hennig, U. Fuegmann, S. Vaidyanathan, J. Granstrom, S. Liu, A. Sydorenko, T. Zillger, G. Schmidt, K. Preissler, E. Reichmanis, P. Eckerle, F. Richter, T. Fischer, and U. Hahn, Ring oscillator fabricated completely by means of mass-printing technologies, Org. Electron., vol. 8, no. 5, pp. 480486, Oct. 2007. [4] A. C. Hbler, G. C. Schmidt, H. Kempa, K. Reuter, M. Hambsch, and M. Bellmann, Three-dimensional integrated circuit using printed elec- tronics, Org. Electron., vol. 12, no. 3, pp. 419423, Mar. 2011. [5] K. Reuter, H. Kempa, K. D. Deshmukh, H. E. Katz, and A. C. Hbler, Full-swing organic inverters using a charged peruorinated electrets fab- ricated by means of mass-printing technologies, Org. Electron., vol. 11, no. 1, pp. 9599, Jan. 2010. [6] A. Daami, C. Bory, M. Benwadih, S. Jacob, R. Gwoziecki, I. Chartier, R. Coppard, C. Serbutoviez, L. Maddiona, E. Fontana, and A. Scuderi, Fully printed organic CMOS technology on plastic substrates for digital and analog applications, in Proc. ISSCC Dig. Tech. Papers, Feb. 2011, pp. 328330. [7] J.-M. Verilhac, M. Benwadih, A.-L. Seiler, S. Jacob, C. Bory, J. Bablet, M. Heitzman, J. Tallal, L. Barbut, P. Frre, G. Sicard, R. Gwoziecki, I. Chartier, R. Coppard, and C. Serbutoviez, Step toward robust and reli- able amorphous polymer eld-effect transistors and logic functions made GUERIN et al.: FULLY PRINTED ORGANIC CIRCUITS ON FLEXIBLE PLASTIC FOILS 3593 by the use of roll to roll compatible printing processes, Org. Electron., vol. 11, no. 3, pp. 456462, Mar. 2010. [8] T. N. Ng, B. Russo, and A. C. Arias, Degradation mechanisms of organic ferroelectric eld-effect transistors used as nonvolatile memory, J. Appl. Phys., vol. 106, no. 9, p. 094504, Nov. 2009. [9] H. Marien, M. Steyaert, N. van Aerle, and P. Heremans, A mixed-signal organic 1 kHz comparator with low V t sensitivity on exible plastic substrate, in Proc. ESSCIRC, Sep. 2009, pp. 120123. [10] H. S. Tan, B. C. Wang, S. Kamath, J. Chua, M. Shojaei-Baghini, V. R. Rao, N. Mathews, and S. G. Mhaisalkar, Complementary organic circuits using evaporated F16CuPc and inkjet printing of PQT, IEEE Electron Device Lett., vol. 31, no. 11, pp. 13111313, Nov. 2010. [11] D. A. Mourey, S. K. Park, D. A. Zhao, J. Sun, Y. V. Li, S. Subramanian, S. F. Nelson, D. H. Levy, J. E. Anthony, and T. N. Jackson, Fast, simple ZnO/organic CMOS integrated circuits, Org. Electron., vol. 10, no. 8, pp. 16321635, Dec. 2009. [12] J. Smith, R. Hamilton, M. Heeney, D. M. de Leeuw, E. Cantatore, J. E. Anthony, I. McCulloch, D. D. C. Bradley, and T. D. Anthopoulos, High-performance organic integrated circuits based on solution process- able polymer-small molecule blends, Appl. Phys. Lett., vol. 93, no. 25, p. 253 301, Dec. 2008. [13] E. Cantatore, T. C. T. Geuns, G. H. Gelinck, E. van Veenendaal, A. F. A. Gruijthuijsen, L. Schrijnemakers, S. Drews, and D. M. de Leeuw, A 13.56-MHz RFID system based on organic transponders, IEEE J. Solid-State Circuits, vol. 42, no. 1, pp. 8492, Jan. 2007. [14] K. Hizu, T. Sekitani, and T. Someya, Reduction in operation voltage of complementary organic thin-lm transistor inverter circuits using double- gate structures, Appl. Phys. Lett., vol. 90, no. 9, p. 093504, Feb. 2007. [15] J. Jeon, B. Murmann, and Z. Bao, Full-swing and high-gain pentacene logic circuits on plastic substrate, IEEE Electron Device Lett., vol. 31, no. 12, pp. 14881490, Dec. 2010. [16] V. Vaidya, D. M. Wilson, X. Zhang, and B. Kippelen, An organic com- plementary differential amplier for exible AMOLED applications, in Proc. IEEE ISCAS, Jun. 2010, pp. 32603263. [17] I. Nausieda, K. K. Ryu, D. He, A. I. Akinwande, V. Bulovi, and C. G. Sodini, Dual threshold voltage organic thin-lm transistor tech- nology, IEEE Trans. Electron Devices, vol. 57, no. 11, pp. 30273032, Nov. 2010. [18] Y. Xia, W. Zhang, M. Ha, J. Ho Cho, M. J. Renn, C. H. Kim, and C. D. Frisbie, Printed sub-2 V gel-electrolyte-gated polymer transistors and circuits, Adv. Funct. Mater., vol. 20, no. 4, pp. 587594, Feb. 2010. [19] M. G. Kane, J. Campi, M. S. Hammond, F. P. Cuomo, B. Greening, C. D. Sheraw, J. A. Nichols, D. J. Gundlach, J. R. Huang, C. C. Kuo, L. Jia, H. Klauk, and T. N. Jackson, Analog and digital circuits using or- ganic thin-lm transistors on polyester substrates, IEEE Electron Device Lett., vol. 21, no. 11, pp. 534536, Nov. 2000. [20] H. Marien, M. S. J. Steyaert, E. van Veenendaal, and P. Heremans, Afully integrated sigma-delta ADC in organic thin-lm transistor technology on exible plastic foil, IEEE J. Solid-State Circuits, vol. 46, no. 1, pp. 276 284, Jan. 2011. [21] N. Gay and W.-J. Fischer, OFET-based analog circuits for microsys- tems and RFID-sensor transponders, in Proc. IEEE Polytronic Conf., Jan. 2007, pp. 143148. [22] H. Klauk, M. Halik, U. Zschieschang, F. Eder, D. Rohde, G. Schmid, and C. Dehm, Flexible organic complementary circuits, IEEE Trans. Electron Devices, vol. 52, no. 4, pp. 618622, Apr. 2005. [23] S. Gowrisanker, M. A. Quevedo-Lopez, H. N. Alshareef, B. E. Gnade, S. Venugopal, R. Krishna, K. Kaftanoglu, and D. R. Allee, A novel low temperature integration of hybrid CMOS devices on exible substrates, Org. Electron., vol. 10, no. 7, pp. 12171222, Nov. 2009. M. Guerin, photograph and biography not available at the time of publication. A. Daami, photograph and biography not available at the time of publication. S. Jacob, photograph and biography not available at the time of publication. E. Bergeret, photograph and biography not available at the time of publication. E. Bnevent, photograph and biography not available at the time of publication. P. Pannier, photograph and biography not available at the time of publication. R. Coppard, photograph and biography not available at the time of publication.