1 C4D05120E Rev.

B
C4D05120E
Silicon Carbide Schottky Diode
Z-REC

RECTIFIER
Features
1.2kV Schottky Rectifer
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coeffcient on V
F
Benefts
Replace Bipolar with Unipolar Rectifers
Essentially No Switching Losses
Higher Effciency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Solar Inverters
Power Factor Correction

Package
TO-252-2

Part Number Package Marking
C4D05120E TO-252-2 C4D05120
PIN 1
PIN 2
CASE
Maximum Ratings (TC=25C unless otherwise specifed)
Symbol Parameter Value Unit Test Conditions Note
V
RRM
Repetitive Peak Reverse Voltage 1200 V
V
RSM
Surge Peak Reverse Voltage 1300 V
V
DC
DC Blocking Voltage 1200 V
I
F
Continuous Forward Current
19
9
5
A
T
C
=25C
T
C
=135C
T
C
=160C
I
FRM
Repetitive Peak Forward Surge Current
26
18
A
T
C
=25C, t
P
=10 ms, Half Sine pulse
T
C
=110C, t
P
=10 ms, Half Sine pulse
I
FSM
Non-Repetitive Peak Forward Surge
Current
42
34
A
T
C
=25C, t
P
=10 ms, Half Sine pulse
T
C
=110C, t
P
=10 ms, Half Sine pulse
I
F,Max
Non-Repetitive Peak Forward Current
400
320
A
T
C
=25C, t
P
=10 ms, Pulse
T
C
=110C, t
P
=10 ms, Pulse
P
tot
Power Dissipation
97
42
W
T
C
=25C
T
C
=110C
T
J
Operating Junction Range
-55 to
+175
C
T
stg
Storage Temperature Range
-55 to
+135
C
V
RRM
= 1200 V
I
F
(T
C
=135C) = 9 A
Q
c
= 27 nC
2 C4D05120E Rev. B
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
Forward Voltage
1.4
1.9
1.8
3
V
I
F
= 5 A T
J
=25C
I
F
= 5 A T
J
=175C
I
R
Reverse Current
20
40
150
300
A
V
R
= 1200 V T
J
=25C
V
R
= 1200 V T
J
=175C
Q
C
Total Capacitive Charge 27 nC
V
R
= 800 V, I
F
= 5A
di/dt = 200 A/s
T
J
= 25C
C Total Capacitance
390
27
20
pF
V
R
= 0 V, T
J
= 25C, f = 1 MHz
V
R
= 400 V, T
J
= 25C, f = 1 MHz
V
R
= 800 V, T
J
= 25C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit
R
JC
TO-252 Package Thermal Resistance from Junction to Case 1.55 C/W
Typical Performance
Figure 1. Forward Characteristics
0
1
2
3
4
5
6
7
8
9
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Figure 2. Reverse Characteristics
0
100
200
300
400
500
600
700
800
900
1000
0 500 1000 1500 2000
C
u
r
r
e
n
t

(

A
)
Voltage (V)
I
F

(
A
)
V
F
(V)
I
R

(

A
)
V
R
(V)

T
J
=-55C

T
J
= 25C

T
J
= 75C


T
J
=125C

T
J
=175C


T
J
=-55C

T
J
= 25C

T
J
= 75C


T
J
=125C

T
J
=175C

3 C4D05120E Rev. B
Figure 3. Current Derating
0
10
20
30
40
50
60
70
80
90
100
25 50 75 100 125 150 175
30
35
40
45
50
55
60
65
0
5
10
15
20
25
25 50 75 100 125 150 175
Typical Performance

10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
50
100
150
200
250
300
350
400
450
0.01 0.1 1 10 100 1000
Figure 4. Power Derating
Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
I
F
(
p
e
a
k
)

(
A
)
T
C
C
P
T
o
t

(
W
)
T
C
C
C

(
p
F
)
V
R
(V)
0
5
10
15
20
25
30
35
0 200 400 600 800 1000
V
R
(V)
Q
r
r

(
n
C
)
4 C4D05120E Rev. B
0.001
0.01
0.1
1
10
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Figure 7. Transient Thermal Impedance
T
h
e
r
m
a
l

R
e
s
i
s
t
a
n
c
e

(

C
/
W
)
T (sec)
Diode Model
T T T
R If V Vf * + =
Note: T
j
is diode junction temperature in degrees Celsius
R
T
= 0.08 + (T
j
* 8.5*10
-4
)
V
T
= 0.96 + (T
j
* -1.22*10
-3
)
5 C4D05120E Rev. B
Recommended Solder Pad Layout
Part Number Package Marking
C4D05120E TO-252-2 C4D05120
TO-252-2
.08
POS
Inches Millimeters
Min Max Min Max
A .250 .289 6.350 7.341
B .197 .215 5.004 5.461
C .027 .050 .686 1.270
D* .270 .322 6.858 8.179
E .178 .182 4.521 4.623
F .025 .045 .635 1.143
G 44 46 44 46
H .380 .410 9.652 10.414
J .090 TYP 2.286 TYP
K 6 8 6 8
L .086 .094 2.184 2.388
M .018 .034 .457 .864
N .035 .050 .889 1.270
P .231 .246 5.867 6.248
Q 0.00 .005 0.00 .127
R R0.010 TYP R0.254 TYP
S .017 .023 .432 .584
T .038 .045 .965 1.143
U .021 .029 .533 .737
Package Dimensions
Package TO-252-2
Note:
* Tab D may not be present
*
Note: Recommended soldering profles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C4D05120E Rev. B
Copyright 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffc control systems.
Notes